© 2013 ASM
EXANE BNP Paribas Tech Expert Access Event LondonJune 27, 2013
New Materials and Processes for Advanced Chip Manufacturing
Bob HollandsDirector Technical Marketing
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© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers• Major Trends in Thin Film Deposition
• The ALD Technology Platform as a Response• FinFET related challenges and Metal ALD• PEALD as a Low Temperature Enabler
• Summary and Conclusions
2
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© 2013 ASM 3
Scaling will increasingly be enabled by New Materials and 3D Technologies
1995 2000 2005 2010 20151990 2025
Scaling enabled by Litho
Scaling enabled by Materials
Scaling enabled by 3D
2020
Low-k
Strained Si
High-k
FinFET
3D Memory
IEDM 2002
IEDM 2003
IEDM 2007
3D SIC
Chipworks 2012
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Increasing Introduction Rate of New Materials
1960 1970 1980 1990 2000 2010
SOIPorous SiOC
CuSiOF
SiGe
NiSiSi(O)N
WTi/TiN
(B)PSG
Si,epiSiO,NAl-Cu
SOPSiOC
AlOHf(Si)O
Ta/TaN
TaO
ZrOLaOSiC
CuSiOFCoSi
Si(O)N
WTi/TiN
(B)PSG
Si,epiSiO,NAl-Cu
SOPSiOC
Ta/TaN
TaO
TiSiSi(O)N
WSi, PtSiTi/TiN
(B)PSG
Si,epiSiO,NAl-Cu
Si(O)N
WSi, MoSiTiW
(B)PSG
Si,epiSiO,NAl-Cu
(B)PSG
Si,epiSiO, SiNAl-Cu
SiSiO, SiNAl-Cu
Starting Mat’lFEOLBEOL
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© 2013 ASM
New Materials and Processes: Moore’s Law Enablers
Higher Capacitance, Lower Leakage
High-k and Metal Gates
DRAM, RF, decoupling capacitors
Less Cross Talk, Faster Interconnect
(Porous) Low-k Materials
Improved Metals
Higher Mobility, Lower Resistance
Strain and new Channel MaterialsNew metal contacts
Smaller Feature Sizes
Sub-Rayleigh limit patterning using SDDP
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ALD enables new materials and 3D
• New materials and 3D applications require more precise and controlled thin film deposition
• Compared to conventional deposition techniques ALD offers superior:• Conformality• Step coverage • Interface control
• The ALD market offers strong growth opportunities: • High-k metal gate, FinFET• Spacer defined double patterning• Other emerging applications
• ASMI is a leading player in the ALD market• Developing ALD technology since 1999• Strong IP position • Number 1 in high-k gate and strong position in SDDP
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What is Atomic Layer Deposition (ALD)?
Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge
Step 3: Reaction to Oxide/Nitridewith O2, H2O, NH3 co-reactant
Step 4: Purge
and repeat…
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Key strengths of ALD relative to conventional deposition
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Step Coverage
SEM’s Courtesy of Philips Research Labs
TiN
Uniformity
Max
Min
<1% 3σ<0.7% M-m
29 nm SiO2
Interface Control
Atomically engineered interfaces to optimize leakage current, reliability and work-functions
Composition Control
Excellent composition control for ternary alloys such as GST and STO
0 25 50 75 100
0
25
50
75
100 0
25
50
75
100
Te
Ge
SbV. Pore (2010)
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ASM’s unique Materials Development Capabilities
Product Development, Product Engineering, Product Marketing, Cooperative R&D Projects
Process Development Process Integration 15 – 7 nm
Cooperative R&D Projects
ASM Belgium
ASM Europe ASM America ASM Japan ASMGK (Korea)
N+2,3
N+1,2
Pre-cursor Exploration Process Feasibility
Basic Materials R&DCooperative R&D Projects
ASM Microchemistry (Fi)
N+≥3
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© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers• Major Trends in Thin Film Deposition
• The ALD Technology Platform as a Response• FinFET related challenges and Metal ALD• PEALD as a Low Temperature Enabler
• Summary and Conclusions
10
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© 2013 ASM
Major Trends in Thin Film Depositionand ASM’s Vision for ALD
Thin Film Needs:• New materials• Thinner films• Interface engineering• 3D conformality• Lower thermal budget
ALD is a whole new technology platform for enabling new materials!
ALD PEALD …..
Integration Capabilities• Subtractive and
Damascene patterning• Etching • Gap fills• Clustering
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FinFET Challenges:ALD enables Further Scaling in 3D
• Materials properties and channel length must be uniform over fin height
• Conformal coverage required• ALD technology has become critical for HK and MG layers
IMEC, 2011
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ASM Front-end Products ALD
• Pulsar® XP • ALD for high-k• Cross-flow reactor• Solid source delivery system
• EmerALD® XP • ALD for metal gates• Showerhead reactor Pulsar® XP
EmerALD® XP
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© 2013 ASM
PEALD as an enabler of Lower Temperature Budget
Low temperature deposition of SiO2and Si3N4 opens up wide potential application space
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LT SiO2 SiO2 SiN SiCNDeposition
Temperature50 oC 260 oC 360 oC 360 oC
Application FEOL SDDP Gate spacerSDDP (LT)
Gate spacerLow WER
Gate spacer
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New Materials enabling LithographySpacer Defined Double Patterning
Litho-formed Resist Pattern
Conformal SiO2
Anisotropic Etch
Pitch
Pitch/2
44nm
22nm
Depo of SiO2 at 50C
Resist
ASM, ALD conference 2008; SPIE conference 2009
Left
Center
Right
Uni
form
CD
’s:
Spa
cer T
hick
ness
NU
<1%
, 3σ
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© 2013 ASM
ASM Front-end ProductsPEALD and PECVD
RC1
RC2
RC4
RC3
RC5
RC6
RC7
RC8
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• XP8• High productivity single wafer tool for
both PEALD and PECVD applications• Accommodates up to 8 chambers for
PEALD or PECVD• PEALD and PECVD can be integrated
on the same platform
Front-End Operations
© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers• Major Trends in Thin Film Deposition
• The ALD Technology Platform as a Response• FinFET related challenges and Metal ALD• PEALD as a Low Temperature Enabler
• Summary and Conclusions
17
Front-End Operations
© 2013 ASM 1818
Summary
• Scaling is increasingly enabled by new materials and 3D technologies
• ALD enables new materials and 3D • The ALD market offers strong growth opportunities • Adoption of more ALD and PEALD applications in HVM
continues• ASMI #1 position in ALD for High-k gate• 3D FinFET’s drive adoption of ALD, not only for the dielectric, but also for
metals• Strong inroads into patterning applications with PEALD
• XP8, high productivity system for PEALD applications
Drive Innovation, Deliver Excellence
© 2013 ASM
Drive Innovation, Deliver Excellence