Newly Developed Semiconductor Detectors - www … Solid State Div. Photon is our Business MRS-APD...

CONFIDENTIAL 1Solid State Div.HAMAMATSU

Photon is our Business

Newly Developed Semiconductor Detectors

・Multi-Pixel Photon Counter (MPPC)

HAMAMATSU PHOTONICS K.K.Koei Yamamoto

PD07 Kobe June 27th 2007

Solid State Div.HAMAMATSU


■ Multi Pixel Photon Counter（MPPC）

The MPPC (Multi-Pixel Photon Counter) is developed by HAMAMATSU PHOTONICS K. K.

and it is one of the products of Si-PM (Silicon Photo multiplier) family which was originally developed in Russia.

HAMAMATSU MPPC is designed as a photon counting device based on structures of a Si APD which was adopted by CERN (CMS).

HAMAMATSU named this product MPPC which is a trademark.

What’s MPPC?Solid state photon counter havingMulti pixelated Geiger-mode APDs with self-quenching resistance



MRS-APD (Metal Resistive Semiconductor APD)SPM (Silicon Photo Multiplier)MPGM APD (Multi Pixel Geiger-mode APD)AMPD (Avalanche Micro-pixel Photo Diode)SSPM (Solid State Photo Multiplier) GM-APD (Geiger Mode APD)SPAD (Singe Photon Avalanche Diode)

The candidates of name in SiPM faimily

MPPC : Multi Pixel Photon Counter

SiPM (Silicon Photo Multiplier)SiPMT (Silicon Photo Multiplier Tube)



What is the structure of MPPC to improve the performances



Photo Absorption coefficient of Silicon





holes holes

electron electron



CMS(CERN) APD

0.0

0

0.7

5

1.5

0

2.2

5

3.0

0

3.7

5

4.5

0

5.2

5

6.0

0

0 %1 0 %2 0 %

3 0 %

4 0 %

5 0 %

6 0 %

7 0 %

8 0 %

9 0 %

1 0 0 %

p o s i t io n ( m m )

S 8 6 6 4 - 5 5 G a in U n i f o rm i t y( T y p . M = 5 0 )

S 8 6 6 4 - 5 5 S p e c t r a l r e s p o n s e c u r v e

0

1 0 0

2 0 0

3 0 0

4 0 0

5 0 0

6 0 0

2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0

W a v e l e n g t h ( n m )

Photo

sensit

ivit

y(m

A/W

)

0 %

2 0 %

4 0 %

6 0 %

8 0 %

1 0 0 %

1 2 0 %

QE

(%)

P h o t o s e n s i t i v i t y

Q E



・ APD structure used in the electromagnetic Calorimeter of CMS.

・ The p/n junction is formed in an epitaxial layer with 50μm thickness.

・ Bias 350 to 400V to get gain 50

E field strengthP+

P

N

N-

N+

Hamamatsu Reverse Structure APD for CMS



p＋

nn－-epi

n＋＋-subst.

n＋

pp－-epi

p＋＋-subst.

p＋

p－-epi

n＋＋-subst.

n＋pp－p＋

N/P-Reach through

P/N-Reach through N/P-Reach throughBack illumination type

HPK Reverse structure



What are the characteristics of MPPC

MPPC signal (ADC counts)100 200 300 400 500 600

Entri

es

0

0.2

0.4

0.6

0.8

1 1600 pixel



■ Specification of 1mm□, MPPC

1600 400 100



■ Bias vs. Gain

S10362-11-025U/C S10362-11-050U/C, -100U/C

25μm 1600pixels

50μm 400pixels

100μm 100pixels



■ Bias vs. Dark count

S10362-11-025U/C S10362-11-050U/C, -100U/C

25μm 1600pixels

50μm 400pixels

100μm 100pixels



Photon Detection Efficiency （PDE）

100μm Pixel（100 pixel type）



※including the cross-talk and after pulse



■ Output signal of MPPC

Photon counting by pulse height（liner Amp.）

Photon counting by output charge（charge Amp.）



Energy Resolution

0

500

1000

1500

0 500 1000 1500 2000 2500 3000

Channel Number

Count pe

r Chan

nel

511keV

1275keV

170keV

MPPC: 50mm pitch, 3mm squareLSO: 3mm x 3mm x 20mmFWHM @511keV: 13%



Gain uniformity（400 pixel, 100 samples）

Delta V [V]0.5 1 1.5 2 2.5200

400

600

800

1000

1200

1400

310× Gain Delta V : 400pixel 100samples



PDE uniformity（400 pixel, 100samples）

Delta V [V]0.5 1 1.5 2 2.50

0.5

1

1.5

2

2.5

PDE Delta V : 400pixel 100samples



S10362-11-025U ( 2006.12 )

1600 pixel Microscopic view



One pixel

y-po

int (

2µm

pitc

h)

x-point (2µm pitch) x-point (1µm pitch)

y-po

int (

1µm

pitc

h)

Gai

n (x

105

)

Sens

itivi

ty (a

rbitr

ary)

Laser Scan in One Pixel

1600 pixel Sensitivity 1600 pixel Gain

• Pin-point scan ：YAG laser (λ = 532 nm) with spot size ~ 1 µm.• Variation of photon sensitivity and gain in one pixel are evaluated.• Observed variation is 2 ~ 5 % in a sensitive areafor the 100 / 400 / 1600 pixel MPPCs.

Variation ~ 3 %



Time resolution at center in different pixelMPPC: MPPC:1mm2 50μm pitch

23Solid State Div.HAMAMATSU


Time resolution in one pixelMPPC:1mm2 50μm pitch



Package Developments



Plastic PKG（1mm□ × 1ch.）

4.23.2

1.3



1.92.4

1.0

[mm]

SMD PKG（1mm□ × 1ch.）



3.94.4

1.0

[mm]

SMD PKG（3mm□ × 1ch.）



CERAMIC PKG（3mm□ × 1ch.）

5.97.2

2.0



CERAMIC PKG（3mm□ × 4ch.）

8.1

8.95

2.0



■ MPPC’s future plan

・Increase reproducibility and uniformity・ Large sensitive area , Array and Matrix・Enhance PDE・Suppress after pulse and cross talk・Quenching resistance optimization・Package development (small, cheap, rugged) ・Custom design ( pitch, package, array)



Al optical separation and Trench etching

Al optical separation

Trench etching



MPPC Module

Features-Employs a Geiger-mode multi-pixel APD(MPPC)-Integrates a signal readout circuit ideal for MPPC-Built-in high-voltage circuit and temperature-compensated

circuit-Three types of output:

analog, comparator, pulse calculation value-USB interface for easy handling: driven by USB bus power-Compact and light weight



MPPC Module block diagram

BUS line

Output-1 ( analog out )

Power ( Use USB bus power )Output-3 ( pulse calculation value)

Output-2 ( comparator out )



Characteristics(analog output)

Measurement

PC

USB

C10507-11-025U C10507-11-050U



Characteristics(temperature stability of Gain)

G a in tem peratu re charac te ris tics

-10

-8

-6

-4

-2

0

2

4

6

8

10

-30deg -20deg -10deg 0deg 10deg 20deg 30deg 40deg 50deg 60deg

Tem pera tu re（℃ ）

Tem

pera

ture

sta

bilit

y of

gain

（％

）



www.hamamatsu.com

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