© Semiconductor Components Industries, LLC, 2021

July, 2021 − Rev. 01 Publication Order Number:

NVG450A120L5DSC/D

Automotive 1200 V, 450 ADual Side CoolingHalf-Bridge Power Module

VE-Trac� DualNVG450A120L5DSC

Product DescriptionThe NVG450A120L5DSC is a member of the VE−Trac Dual power

module family with dual side cooling and compact footprints forHybrid (HEV) and Electric Vehicle (EV) traction inverter application.

The module consists of two latest 1200 V Ultra Field Stop (UFS)IGBTs in a half−bridge configuration. The chipset utilizes the provenTrench Ultra Field Stop IGBT technology in providing high currentdensity while offering robust short circuit protection and increasedblocking voltage. Additionally, UFS IGBT and copacked soft diodedeliver a low power loss operation and soft switching simultaneously,which helps to improve overall system efficiency in HEV/EV tractionapplications.

Features

• Dual−Side Cooling

• Integrated Chip Level Temperature & Current Sensor

• Tvj max = 175°C

• Low Stray Inductance

• Low Conduction and Switching Losses

• Automotive Grade

• 4.2 kV Isolated DBC Substrate

• This is a Pb−Free Device

Typical Applications

• Hybrid and Electric Vehicle Traction Inverter

• High Power DC−DC Converter

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AHPM15−CEACASE 100DD

MARKING DIAGRAM

See detailed ordering and shipping information on page 9 ofthis data sheet.

ORDERING INFORMATION

ZZZ = Assembly Lot CodeAT = Assembly & Test Site CodeY = YearWW = Work WeekXXXX = Specific Device CodeNNN = Serial Number

VE−Trac� Dual NVG450A120L5DSC

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PIN DESCRIPTION

Pin No. Pin Description Pin Arrangement

1 N Low Side Emitter

2 P High Side Collector

3 H/S COLLECTOR SENSE High Side Collector Sense

4 H/S CURRENT SENSE High Side Current Sense

5 H/S EMITTER SENSE High Side Emitter Sense

6 H/S GATE High Side Gate

7 H/S TEMP SENSE (CATHODE) High Side Temp sense Diode Cathode

8 H/S TEMP SENSE (ANODE) High Side Temp sense Diode Anode

9 ~ Phase Output

10 L/S CURRENT SENSE Low Side Current Sense

11 L/S EMITTER SENSE Low Side Emitter Sense

12 L/S GATE Low Side Gate

13 L/S TEMP SENSE (CATHODE) Low Side Temp sense Diode Cathode

14 L/S TEMP SENSE (ANODE) Low Side Temp sense Diode Anode

15 L/S COLLECTOR SENSE Low Side Collector Sense

DBC SubstrateAl2O3 isolated substrate, basic isolation, and copper on both sides

Lead frameCopper, with tin electro−plating

Flammability InformationAll Power Module packaging materials meet UL flammability rating class 94V−0

MODULE CHARACTERISTICS

Symbol Parameter Rating Unit

Tvj Continuous Operating Junction Temperature Range −40 to 150 °C

Tvj.op Continuous Operating Junction Temperature Under Switching Conditions −40 to 175 °C

TSTG Storage Temperature Range −40 to 125 °C

VISO Isolation Voltage, DC, t = 1 s 4200 V

Creepage Terminal to HeatsinkTerminal to Terminal

6.0 mm

Clearance Terminal to HeatsinkTerminal to Terminal

3.2 mm

CTI Comparative Tracking Index >600

Min. Typ. Max.

LsCE Stray Inductance − − 8 nH

RCC’+EE’ Module Lead Resistance, Terminals − Chip − − 0.15 m�

G Module Weight − − 72 g

M M4 Screws for Module Terminals − − 2.2 Nm

VE−Trac� Dual NVG450A120L5DSC

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ABSOLUTE MAXIMUM RATINGS (Tvj = 25°C, unless otherwise specified)

Symbol Parameter Rating Unit

IGBT

VCES Collector to Emitter Voltage 1200 V

VGES Gate to Emitter Voltage −15/+20 V

ICN Implemented Collector Current 450 A

IC nom Continuous DC Collector Current, Tvjmax = 175°C, TF = 65°C, Ref. Heatsink 410 (Note 1) A

ICRM Pulsed Collector Current @ VGE = 15 V, tp = 1 ms 900 A

DIODE

VRRM Repetitive Peak Reverse Voltage 1200 V

IFN Implemented Forward Current 450 A

IF Continuous Forward Current, Tvjmax = 175°C, TF = 65°C, Ref. Heatsink 360 (Note 1) A

IFRM Repetitive Peak Forward Current, tp = 1 ms 900 A

I2t value VR = 0 V, tp = 10 ms, TvJ = 150°CTVJ = 175°C

1440012960

A2s

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. Verified by characterization, not test.

THERMAL CHARACTERISTICS (Verified by characterization, not test)

Symbol Parameter Min. Typ. Max. Unit

IGBT.Rth,J−C Effective Rth, Junction to Case (Note 2) − 0.06 0.08 °C/W

IGBT.Rth,J−F Effective Rth, Junction to Fluid, �TIM = 6 W/m−K, F = 660 N10 L/min, 65°C, 50/50 EGW, Ref. Heatsink

− 0.15 − °C/W

Diode.Rth,J−C Effective Rth, Junction to Case (Note 2) − 0.08 0.10 °C/W

Diode.Rth,J−F Effective Rth, Junction to Fluid, �TIM = 6 W/m−K, F = 660 N10 L/min, 65°C, 50/50 EGW, Ref. Heatsink

− 0.21 − °C/W

2. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dualassembly guide for additional details about acceptable DBC surface finish.

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CHARACTERISTICS OF IGBT (Tvj = 25°C, unless otherwise specified)

Parameters Conditions Min Typ Max unit

VCESAT Collector to Emitter Saturation Voltage(Terminal)

VGE = 15 V, IC = 300 A, Tvj = 25°CTvj = 150°CTvj = 175°C

VGE = 15 V, IC = 450 A, Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

−−−

1.381.501.53

1.591.821.87

1.6−−

−−−

V

ICES Collector to Emitter Leakage Current VGE = 0 V, VCE = 1200 V Tvj = 25°CTvj = 175°C

−−

−7

1−

mA

IGES Gate – Emitter Leakage Current VCE = 0 V, VGE = +20 V/−15 V − − ±400 nA

Vth Threshold Voltage VCE = VGE , IC = 500 mA 5.8 6.8 7.6 V

QG Total Gate Charge VGE = −8 to 15 V, VCE = 600 V − 1.45 − �C

RGint Internal Gate Resistance − N/A − �

Cies Input Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 61 − nF

Coes Output Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 1.48 − nF

Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz − 0.69 − nF

Td.on Turn On Delay, Inductive Load IC = 300 A, VCE = 600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.on = 3 � Tvj = 175°C

−−−

128121118

−−−

ns

Tr Rise Time, Inductive Load IC = 300 A, VCE=600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.on = 3 � Tvj = 175°C

−−−

596668

−−−

ns

Td.off Turn Off Delay, Inductive Load IC = 300 A, VCE = 600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.off = 5 � Tvj = 175°C

−−−

106165184

−−−

ns

Tf Fall Time, Inductive Load IC = 300 A, VCE=600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.off = 5 � Tvj = 175°C

−−−

103250281

−−−

ns

EON Turn−On Switching Loss (IncludingDiode Reverse Recovery Loss)

IC = 300 A, VCE = 600 V Tvj = 25°CVGE = +15/−8 V Tvj = 150°CRg.on = 3 � Tvj = 175°CLs = 25 nHdi/dt (Tvj=25°C) = 4.06 A/nsdi/dt (Tvj=175°C) = 3.95 A/ns

−−−

18.4728.9731.24

−−−

mJ

EOFF Turn−Off Switching Loss IC=300A, VCE=600 V Tvj = 25°CVGE=+15/−8 V Tvj = 150°CRg.off=5 � Tvj = 175°CLs=25 nHdv/dt (Tvj=25°C) = 4.15 V/nsdv/dt (Tvj=175°C) = 3.21 V/ns

−−−

20.3736.0639.10

−−−

mJ

Esc Minimum Short Circuit Energy Withstand VGE = 15 V, VCC = 600 VTvj = 25°CTvj = 175°C

168.8

−−

−−

J

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CHARACTERISTICS OF INVERSE DIODE (Tvj = 25°C, unless otherwise specified)

Parameters Conditions Min Typ Max unit

VF Diode Forward Voltage (Terminal) VGE = 0 V, IC = 300 A, Tvj = 25°CTvj = 150°CTvj = 175°C

VGE = 0 V, IC = 450 A, Tvj = 25°CTvj = 150°CTvj = 175°C

−−−

−−−

1.581.561.54

1.801.811.78

1.82−−

−−−

V

Err Reverse Recovery Energy VR = 600 V, IF = 300 A, Tvj = 25°CRGON = 3 �, Tvj = 150°C−di/dt = 3.95 A/ns (175°C) Tvj = 175°CVGE = −8 V

−−−

10.3922.5224.95

−−−

mJ

QRR Recovered Charge VR = 600 V, IF = 300 A, Tvj = 25°CRGON = 3 �, Tvj = 150°C−di/dt = 395 A/ns (175°C) Tvj = 150°CVGE = −8 V

−−−

255359

−−−

�C

Irr Peak Reverse Recovery Current VR = 600 V, IF = 300 A, Tvj = 25°CRGON = 3 �, Tvj = 150°C−di/dt = 3.95 A/ns (175°C) Tvj = 175°CVGE = −8 V

−−−

250332343

−−−

A

SENSOR CHARACTERISTICS (Tvj = 25°C, unless otherwise specified)

Parameters Conditions Min Typ Max unit

Tsense Temperature Sense IF = 250 �A, Tvj = −40°CTvj = 25°C

Tvj = 150°CTvj = 175°C

−2.95

(Note 3)−−

3.403.01

2.272.08

−3.086

(Note 3)−−

V

Isense Current Sense Rshunt = 10 �, IC = 600 AIC = 300 AIC = 200 A

Rshunt = 20 �, IC = 600 AIC = 300 AIC = 200 A

−−−

−−−

392254209

566377314

−−−

−−−

mV

3. Measured at final test.

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VCE (V)

C (

nF)

0,10

1,00

10,00

100,00

1000,00

Cies

Coes

Cres

VGE = 0 V, Tvj = 25°C, f = 1 MHz

0 100 200 300 400 500 600

VCE (V)

I C (A

)

I C (A

)

I C (A

)

VGE (V)

VCE (V)

Figure 1. IGBT Output Characteristic Figure 2. IGBT Transfer Characteristic

Figure 3. IGBT Output Characteristic

I C (A

)

VCE (V)

Figure 4. IGBT Output Characteristic

0

100

200

300

400

500

600

700

800

900

25°C

0 0,5 1 1,5 2 2,5 3

Vge = 15 V0

100

200

300

400

500

600

700

800

900VCE = 20 V

2 4 6 8 10 12 14

0

100

200

300

400

500

600

700

800

900

0 1 2 3 4 5 6

Vge = 9 V

Vge = 11 V

Vge = 13 V

Vge = 15 VVge = 17 V

0

100

200

300

400

500

600

700

800

900

0 1 2 3 4 5 6

Tj = 25°C Tj = 175°C

VG

E (

V)

QG (�C)

Qg

Figure 5. Gate Charge Characteristic Figure 6. Capacitance Characteristic

−10

−5

0

5

10

15

0 1 2 3

VCE = 600 V, IC = 300 A, Tvj = 25°C

150°C

175°C

25°C

150°C175°C

Vge = 9 V

Vge = 11 V

Vge = 13 V

Vge = 15 V

Vge = 17 V

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10

15

20

25

30

35

40

45

50

0

5

20

25

30

35

40

45

50E

(m

J)

Eon

(m

J)

IC (A) Rgon (�)

Figure 7. IGBT Turn−on Losses vs. IC Figure 8. IGBT Turn−on Losses vs. Rgon

VGE = +15/−8 V, RGon = 3 �, VCE = 600 V

100 200 300 400

VGE = +15/−8 V, IC = 300 A, VCE = 600 V

10

15

0

5

20

25

30

35

40

45

50

10

15

1,5 2,5 3,5 4,5 5,5 6,5

IC (A)

Figure 9. IGBT Turn−off Losses vs. IC

E (

mJ)

Rgoff (�)

Eof

f (m

J)

Tim

e (n

s)

Tim

e (n

s)

IC (A) IC (A)

Figure 10. IGBT Turn−off Losses vs. Rgoff

Figure 11. IGBT Switching Times vs. IC, Tvj = 25�C Figure 12. IGBT Switching Times vs. IC, Tvj = 175�C

VGE = +15/−8 V, IC = 300 A, VCE = 600 V0

10

20

30

40

50

60

VGE = +15/−8 V, RGoff = 5 �, VCE = 600 V

100 200 300 400 5 10 15 20

1

10

100

1000

10000

100 200 300 400

VGE = +15/−8 V, RGon = 3 �, RGoff = 5 �, VCE = 600 V

Td.on

Tr, Tj

Td.off

Tf, Tj

VGE = +15/−8 V, RGon = 3 �, RGoff = 5 �, VCE = 600 V

1

10

100

1000

10000

100 200 300 400

Td.on, TjTr, Tj

Td.off, Tj

Tf, Tj

150°C

175°C

25°C

150°C

175°C

25°C

150°C

175°C

25°C

150°C

175°C

25°C

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0

5

10

15

20

25

30

0,001

0,01

0,1

1

VCE (V)

Figure 13. Reverse Bias Safe Operating Area

I C (A

)

Time (s)

Zth

(K

/W)

I F (A

)

Err

(m

J)

VF (V) IF (A)

Figure 14. IGBT Transient Thermal Impedance

Figure 15. Diode Forward Characteristics Figure 16. Diode Switching Losses vs. IF

10 L/min, Tf = 65°C, 50/50 EGW, Ref. Heatsink

Zth,j−f: IGBT

Figure 17. Diode Reverse Recovery Losses vs. Rgon

Rgon (�)

Err

(m

J)

VGE = +15/−8 V, IC = 300 A, VCE = 600 V

Time (s)

Zth

(K

/W)

Figure 18. Diode Transient Thermal Impedance

0

100

200

300

400

500

600

700

800

900

VGE = +15/−8 V, RGoff = 5 �, Tvj = 150°C

ModuleChip

0 400 800 1200 0,0001 0,001 0,01 0,1 1 10

0

100

200

300

400

500

600

700

800

900

0,2 0,6 1 1,4 1,8 2,2 2,60

5

10

15

20

25

30

35

RGon = 3 �, VCE = 600 V

100 200 300 400

0,0001 0,001 0,01 0,1 1 101,5 2,5 3,5 4,5 5,5 6,50,001

0,01

0,1

1

10 L/min, Tf = 65°C, 50/50 EGW, Ref. Heatsink

Zth,j−f: Diode

25°C

150°C175°C

25°C

150°C

175°C

25°C

150°C

175°C

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800

900

1000

1100

1200

1300

1400

0

0,5

1

1,5

2

2,5

3

3,5

4

−40 10 60 110

TS

EN

SE (

V)

I SE

NS

E (

mV

)

Temperature (°C) IC (A)

Figure 19. Temperature Sensor Characteristics Figure 20. Current Sensor Characteristics

y = −0,006x + 3,1867

Ibias = 250 �A

IC (A)

Figure 21. Current Sensor Characteristics

I SE

NS

E (

mV

)

T (°C)

VC

ES (

V)

Figure 22. Maximum Allowed Vce

ICES = 1 mA, Tvj ≤ 25°C; ICES = 30 mA, Tvj ≥ 25°C

Verified by characterization/design,not by test.

160

100

200

300

400

500

600

700

00 200 400 600

−40°C

RShunt = 10 �

y = −0,4587x + 117,25

100

200

300

400

500

600

700

800

900

1000

00 200 400 600

RShunt = 20 �

y = −0,6311x + 188,28

−40 0 40 80 120 160 200

25°C

150°C175°C

−40°C25°C

150°C175°C

ORDERING INFORMATION

Device Device Marking Package Shipping

NVG450A120L5DSC N412DSC AHPM15−CEA(Pb−Free)

6 Unit / Tube

VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

AHPM15−CEACASE 100DD

ISSUE ADATE 09 OCT 2019

GENERICMARKING DIAGRAM* ZZZ = Assembly Lot Code

AT = Assembly & Test Site CodeY = YearWW = Work WeekXXXX = Specific Device CodeNNN = Serial Number

*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “�”, mayor may not be present. Some products maynot follow the Generic Marking.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

98AON86580GDOCUMENT NUMBER:

DESCRIPTION:

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