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October 2002 Sienna, JL. Faure, DAPNIA/SPP
InIn
8th Topical Seminar on Innovative Particle and 8th Topical Seminar on Innovative Particle and Radiation DetectorsRadiation Detectors
Jean-louis Faure CEA-DAPNIA-SPPJean-louis Faure CEA-DAPNIA-SPP
Progress with Photo-detectors
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Photo-detectorsPhoto-detectors
Vacuum DevicesSolid States DetectorsGaseous Detectors
High Energy PhysicsAstro-PhysicsMedecine
Restriction to Visible Light
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Requirements IRequirements IPhoton counting capability
In scintillation detection In Cerenkov light detection
Pixelisation & Single photonScintillating fiberCerenkov counter RICH
Low photon Yield (single photon)Gain
SpeedLarge Surface CoverageHarsh Environement
Magnetic fieldRadiation field
High Energy Physics
Medicine
Astro Physics
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Requirements II Requirements II Resolution reminderResolution reminder
Nphoto−electron=QuantumEff⋅Ccollected⋅ Nγ_ signal.or.background
σsignal/background= ENF ⋅ Nphoto−electron
ENF =1+ 1δ1
+ 1δ1δ2
+⋅⋅⋅+ 1δ1δ2 ⋅⋅⋅δn
σENC =ENCGain
σE
= σNphoto−electron
= σsignal2 +σBackground
2 +σ ENC2
Npe
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Requirements III Requirements III Resolution reminderResolution reminder
σE
≈ ENFQE⋅Ccol ⋅Nγ
σE
=ENF⋅QuantumEff⋅Ccol ⋅(Nγ _ signal+Nγ _ background)+(ENC/ Gain)2
QuantumEff⋅Ccol ⋅Nγ
G >>ENC or ENC small !!Nbackground << Nsignal
QE as high as possibleENF as close as 1.Ccol as close as 100%
N as large as possible !!!
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Requirements IV Requirements IV Resolution summaryResolution summary
No.of Photons
Ener
gy R
eso l
u ti o
n
0.001
Poisson (statistic) LimitENF=1QE=1Ccol=1
Photo Diode
Avalanche Photo-diode
Hybrid Photo-DiodePMT
0.01
0.1
1
10
10 1 10 2 10 710 3 10 4 10 610 0
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Vacuum DevicesVacuum DevicesVacuum Devices are the ground of Photodetection
since more than 40 years
There are still important progress made and to be made ?
Last years a lot of efforts on “Compactness” Flat PMT“Pixelization” Multi-anode PMT“Hybridation” Hybrid Photo-diode
October 2002 Sienna, JL. Faure, DAPNIA/SPP
FLAT PMT HamamatsuFLAT PMT Hamamatsu
64 Pixels
Metal Channel dynode
RICH2002 J. Va’vra (SLAC)
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Delft Electronic Products B.V. HPDs
LHCb
19 x 5.5mm
73 x 2.75mm
CMS HCAL
Photon Countingpossibility
October 2002 Sienna, JL. Faure, DAPNIA/SPP
MultiAnode PMTMultiAnode PMT
Hamamatsu R7600-M16/M64
EUSO Focal Plane 2.5 m diameter250.000 pixels
Hamamatsu R5900 seriesM64 (64 anodes – metal dynode chains)
Enhancing the actual active surfaceFrom 38 % to 85 %
From RICH2002 Workshop: Franz Muheim (U.of Edinburgh)
October 2002 Sienna, JL. Faure, DAPNIA/SPP
””Large” PMT ExamplesLarge” PMT Examples
1 km
10 TeV Muon Event
Photomultiplier
ICECUBE(Amanda II)60 PMTs/string80 strings4800PMTs
AUGER1600 water tanks 3 PMTs≈ 4800 PMT of 9”
Photonis XP1805/D1
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Quantum Quantum EfficiencyEfficiency
October 2002 Sienna, JL. Faure, DAPNIA/SPP
MCP R&DMCP R&D
Photoelectron
photonFaceplate
Photocathode !V ~ 300V
Dual MCP !V ~ 3000V
6 !V ~ 300V
Anode
Gain ~ 106
BurlePlanacom™
Micro Channel PlateMCP-PMTs
SiliconMicro Channel Plate
Silicon MCP are made by photolithography5 m pores Potential large surfaceStrip readout (X and Y) pixel nb reduction
From O.Siegmund SSL UCB
October 2002 Sienna, JL. Faure, DAPNIA/SPP
APDsAPDs
Si3N4, SiO2, contactp++photon conversionp e- accelerationn e- multiplication
n-e- drift
n++e- collection
contact
Not to scale
APD are grown by epitaxy on n++ wafer
5 mm
Active area 5x5 mm2
Operating voltage (Vr) ~380 VCapacitance 70 pFSerial resistance 3 ΩDark Current <10 nAQuantu efficien cy ∼72% @ 420 n
CMS ECALDouble APD
October 2002 Sienna, JL. Faure, DAPNIA/SPP
APDs con’t APDs con’t
1
3
5
7
9
11
13
15
0 500 1000 1500 2000
Gain
Excess Noise Factor
0
10
20
30
40
50
60
70
80
90
100
300 400 500 600 700 800 900 1000Wavelength [nm]
Quantum Efficiency [%]
dMdV
× 1M
=3%/V dMdT
× 1M
=−2%/0C
ENF =k ×G+ 2−1G( )×(1−k)k is the hole / elec velocity ratioG the gain
ENF≥2
October 2002 Sienna, JL. Faure, DAPNIA/SPP
APDs R&DAPDs R&DHow to overcome the ENF versus Gain issue
=How to operate at high gain without increasing ENF
Run at low temperature
Reverse APDs
LAAPD Large Array APD
Build a HAPDHPMT using an APD instead of an PIN diode
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Silicon PMSilicon PMby P. Buzhan, B. Dolgoshein et. al.
G= 2x106
ENF≈1QE≈10%Sensitive area 1.5x1.5 mm
October 2002 Sienna, JL. Faure, DAPNIA/SPP
Gaseous Photo DetectorGaseous Photo Detector
• fast signals [1-10 ns] • high gain [>105] • sensitivity to single photoelectrons• operation in noble gases (mixtures) • high 2D precision
Multi-GEM GMPTs
From Breskin et al.CsI Quantum Efficiency
CsI photo-cathode mature technologyIs well adpated to RICH
How to work in visible light ?A possible solution for very large surface detector
October 2002 Sienna, JL. Faure, DAPNIA/SPP
SummarySummaryHuge progress in small pixel photodetectors
Hybid devices [HPD, MaPMT,….] Solid states arrays [PiN, APD,….]
R&DHybrid improvement (HAPD)Promising use of nano-technology Silicon MCP
Very Large surface (volume) coverageVacuum devices today only solution ?R&D needs
Dream no vacuumLarge area photo-cathode
High Energy Physics&
Medicine
Astro Particule&
Astrophysics