Ümit Özgür, PhD

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Ümit Özgür, PhD

Professor, Department of Electrical and Computer Engineering Virginia Commonwealth University 601 West Main Street • Richmond, VA 23284 Phone (804) 828 - 2581 • Fax (804) 827 - 0006 • E-mail: uozgur@vcu.edu

Education

Ph.D. in Physics, Duke University, 2003

“Ultrafast Spectroscopy of Group III-Nitride Semiconductor Heterostructures” Adv: Henry O. Everitt

M.A. in Physics, Duke University, 1999

M.S. candidate, Electrical & Electronics Engineering Boğaziçi University, (1996-’97)

B.S. in Electrical & Electronics Engineering and B.S. in Physics, Boğaziçi University, 1996

Professional Experience

Virginia Commonwealth University (VCU), Dept. of Electrical and Computer Engineering 2018 – Professor 2013 – 2018 Associate Professor 2008 – 2013 Assistant Professor 2016 – Graduate Program Director 2012 – 2015 Qimonda Assistant/Associate Professor 2007 – 2008 Instructor 2003 – 2008 Post-Doctoral Research Associate

Duke University, Physics Dept. 1997 – 2003 Teaching and Research Assistant

ROTA Electronics Ltd., Istanbul, Turkey 1995 – 1997 Project Engineer

Honors and Awards

ASEE Electrical and Computer Engineering Division Outstanding Diversity Paper Award, 2017

IEEE Senior Membership, 2015

Faculty Excellence Award, Engineering Student Council, VCU, 2014

Recognition of mentorship for a Goldwater Scholar (N. Andrade), 2014

Qimonda Endowed Professorship (3 year term), VCU, 2012

Parent’s Award for Excellence in Undergraduate Teaching, VCU, 2012

Fritz London Fellowship (2001), Walter Gordy Fellowship (2000), Duke University

Who is Who in Science and Engineering, 2006

Publications

1 Book, 6 Book Chapters, 140+ refereed Journal Articles, 100+ refereed Conference Proceedings, 60+ additional conference abstracts, 10+ invited talks and seminars.

Comprehensive review papers on ZnO materials and devices, microwave ferrites, and LEDs.

Google Scholar profile https://scholar.google.com/citations?user=0jE38j0AAAAJ&hl=en

Teaching (2007 - present)

Undergraduate: EGRE303 Electronic Devices; EGRE309 Electromagnetic Fields; EGRE310 Microwave & Photonics Engineering; EGRE491 Introduction to Optoelectronics; ENGR497 Vertically Integrated Projects “Optics and Photonics”

Graduate: EGRE525 Fundamentals of Photonics Engineering; EGRE640 Semiconductor Optoelectronics; EGRE624 Nonlinear Optical Materials and Devices

Ümit Özgür, PhD

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Professional Service

Program Committee, SPIE Photonics West, Oxide-based Materials and Devices, 2018 - present

Program Committee and Session Chair, SPIE Photonics West, Gallium Nitride Materials and Devices Conference, 2011 – present

US National Committee of International Electrotechnical Commission (USNC/IEC), SC 47E Discrete Semiconductor Devices, Member, 2017

Reviewer for grant proposals to federal, state (VA), and international funding agencies

Frequent Reviewer for numerous scientific journals published by American Physical Society, American Chemical Society, American Institute of Physics, Elsevier, IEEE, Institute of Physics, Nature, Optical Society of America, Royal Society of Chemistry, Springer, and Wiley

Membership: American Physical Society (APS), Inst. Elect. & Electron. Eng. (IEEE) - Senior, Society of Photo-Optical Instrumentation Engineers (SPIE)

List of Publications

Book

1. H. Morkoç and Ü. Özgür, “Zinc Oxide: Fundamentals, materials and device technology”, WILEY, 2009.

Book Chapters

1. Ü. Özgür, V. Avrutin, and H. Morkoç, “ZnO Materials and Devices grown by MBE”, in “Molecular Beam Epitaxy: From Research to Mass Production” edited by M. Henini, Elsevier, second edition 2017.

2. K. Ding, V. Avrutin, Ü. Özgür, and H. Morkoç, “III-Nitride Light Emitting Diodes”, in “Wiley Encyclopedia of Electrical and Electronics Engineering”, Wiley, 2017.

3. Ü. Özgür, V. Avrutin, and H. Morkoç, “ZnO Materials and Devices grown by MBE”, in “Molecular Beam Epitaxy: From Research to Mass Production” edited by M. Henini, Elsevier, 2013.

4. R. Shimada, Ü. Özgür, and H. Morkoç, “Polariton devices based on wide-bandgap semiconductor microcavities”, in “Nanoscale Photonics and Optoelectronics, Springer Series: Lecture Notes in Nanoscale Science and Technology, Volume 9” edited by Z. M. Wang and A. Neogi, Springer, 2010.

5. J. Xie, Y. Fu, Ü. Özgür, and H. Morkoç, “GaN lateral epitaxial growth using porous SiNx, TiNx and SiC”, in “Porous SiC and GaN: Epitaxy, Catalysis, and Biotechnology Applications” edited by R. M. Feenstra and C. E. C. Wood, Wiley, 2008.

6. Ü. Özgür and H. Morkoç, “Optical Properties of ZnO and related alloys”, in “Zinc Oxide Bulk, Thin Films and Nanostructures” edited by C. Jagadish and S. J. Pearton, Elsevier, 2006.

Refereed Journal Articles

2018

1. E. Sermuksnis, J. Liberis, A. Matulionis, V. Avrutin, M. Toporkov, Ü. Özgür, and H. Morkoç, “Hot LO-phonon limited electron transport in MgZnO/ZnO channels”, J. Appl. Phys. 123, 175702 (2018).

2. V. Sheremet, N. Gheshlaghi, M. Sözen, M. Elçi, N. Sheremet, A. Aydınlı, I. Altuntaş, K. Ding, V. Avrutin, Ü. Özgür, and H. Morkoç, “InGaN strain compensation layers in InGaN/GaN blue LEDs with step-graded electron injectors”, Superlattices and Microstructures 116, 253 (2018).

3. F. S. Awad, H. D. Kiriarachchi, K. M. AbouZeid, Ü. Özgür, and M. S. El-Shall, “Plasmonic Graphene Polyurethane Nanocomposites for Efficient Solar Water Desalination”, ACS Applied Energy Materials 1 (3) 976-985 (2018).

4. N. A. Lewinski, V. Avrutin, T. Izadi, L. E. Secondo, Md. B. Ullah, Ü. Özgür, H. Morkoç, and E. Topsakal, “Influence of ZnO thin film crystallinity on in vitro biocompatibility”, Toxicology Research, 2018.

2017

5. M. B. Ullah, K. Ding, T. Nakagawara, V. Avrutin, Ü. Özgür, and H. Morkoç, “Characterization of Ag Schottky barriers on Be0.02Mg0.26ZnO/ZnO heterostructures”, Phys. Stat. Sol. RRL 12, 1700366 (2017).

6. V. Sheremet, M. Genç, N. Gheshlaghi, M. Elçi, N. Sheremet, A. Aydınlı, I. Altuntaş, K. Ding, V. Avrutin, Ü. Özgür, and H. Morkoç, “Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors”, Superlattices and Microstructures 113, 623 (2017).

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7. K. Ding, Md. B. Ullah, V. Avrutin, Ü. Özgür, and H. Morkoç, “Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures”, Appl. Phys. Lett. 111, 182101 (2017).

8. V. Sheremet, M. Genç, M. Elçi, N. Sheremet, A. Aydınlı, I. Altuntaş, K. Ding, V. Avrutin, Ü. Özgür and H. Morkoç, “The Role of ITO Resistivity on Current Spreading and Leakage in InGaN/GaN Light Emitting Diodes”, Superlattices and Microstructures 111, 1177 (2017).

9. D. O. Demchenko, V. Tallapally, R. J. Alan Esteves, S. Hafiz, T. Nakagawara, I. U. Arachchige, and Ü. Özgür, “Optical Transitions and Excitonic Properties of Ge1-xSnx Alloy Quantum Dots”, The Journal of Physical Chemistry C 121, 18299 (2017).

10. K. Ding, V. Avrutin, Ü. Özgür, and H. Morkoç, “Status of growth of group III-nitride heterostructures for deep ultraviolet light-emitting diodes”, Crystals 9, 300 (2017).

11. N. Izyumskaya, A. Tahira, Z. H. Ibupoto, N. Lewinski, V. Avrutin, Ü. Özgür, E. Topsakal, M. Willander, and H. Morkoç, “Electrochemical Biosensors Based on ZnO Nanostructures”, ECS Journal of Solid State Science and Technology 6, Q84 (2017).

12. N. Izyumskaya, D. O. Demchenko, S. Das, U. Ozgur, V. Avrutin, and H. Morkoç, “Recent Developments of Boron Nitride towards Electronic Applications”, Adv. Electron. Mat. 3, 1600485 (2017).

13. M. B. Ullah, V. Avrutin, T. Nakagawara, S. Hafiz, I. Altuntaş, Ü. Özgür, and H. Morkoç, “Growth Kinetics of O-polar BeMgZnO Alloy: Role of Zn to Be and Mg Flux Ratio as a Guide to Growth at High Temperature”, J. Appl. Phys. 121, 185704 (2017).

14. L. Ardaravičius, O. Kiprijanovič, J. Liberis, M. Ramonas, E. Šermukšnis, A. Matulionis, M. Toporkov, V. Avrutin, Ü. Özgür, and H. Morkoç, “High-field electron transport in doped ZnO”, Materials Research Express 4, 066301 (2017).

15. M. Toporkov, MD B. Ullah, D. Demchenko, V. Avrutin, H. Morkoç, and Ü. Özgür, “Effect of oxygen-to-metal ratio on incorporation of metal species into quaternary BeMgZnO alloy grown by plasma assisted molecular beam epitaxy”, J. Cryst. Growth 467, 145 (2017).

16. R. B. Green, M. Toporkov, Md. B. Ullah, V. Avrutin, Ü. Özgür, H. Morkoç, and E. Topsakal, “An Alternative Material for Transparent Antennas for Commercial and Medical Applications”, Microwave and Optical Technology Letters, 59, 773 (2017).

2016

17. R. J. Alan Esteves, S. Hafiz, D. Demchenko, Ü. Özgür, and I. U. Arachchige, “Ultra-Small Ge1-xSnx quantum dots with visible photoluminescence”, Chem. Comm. 52, 11665 (2016).

18. M. B. Ullah, V. Avrutin, S. Li, S. Das, M. Monavarian, M. Toporkov, Ü. Özgür, P. Ruterana, and H. Morkoç, “Polarity Control and Residual Strain in ZnO Epilayers Grown by Molecular Beam Epitaxy on (0001)-GaN/Sapphire”, Phys. Stat. Sol. RRL. 10, 682 (2016). (cover page)

19. S. Hafiz, R. J. Alan Esteves, D. Demchenko, I. U. Arachchige, and Ü. Özgür, “Energy Gap Tuning and Carrier Dynamics in Colloidal Ge1-xSnx Quantum Dots”, Journal of Physical Chemistry Lett. 7, 3295 (2016).

20. D. O. Demchenko, N. Izyumskaya, M. Feneberg, R. Goldhahn, V. Avrutin, Ü. Özgür, and H. Morkoç, “Optical properties of organic-inorganic hybrid perovskite CH3NH3PbI3: theory and experiment”, Phys. Rev. B 94, 075206 (2016).

21. M. Monavarian, N. Izyumskaya, M. Müller, S. Metzner, P. Veit, N. Can, S. Das, Ü. Özgür, F. Bertram, J. Christen, H. Morkoç, and V. Avrutin, “Improvement of optical quality of semipolar (11-22) GaN on m-plane sapphire by in situ epitaxial lateral overgrowth”, J. Appl. Phys. 119, 145303 (2016).

22. M. Toporkov, D. Demchenko, Z. Zolnai, J. Volk, V. Avrutin, H. Morkoç, and Ü. Özgür, “Lattice Parameters and Electronic Structure of BeMgZnO Quaternary Solid Solutions: Experiment and Theory”, J. Appl. Phys. 119, 095311 (2016).

2015

23. L. Nahar, R. J. Alan Esteves, S. Hafiz, Ü. Özgür, and I. U. Arachchige, “Metal-Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly”, ACS Nano 9, 9810 (2015).

24. L. Ardaravičius, O. Kiprijanovič, J. Liberis, E. Šermukšnis, A. Matulionis, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, “Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels”, Semicond. Sci. Technol. 30, 105016 (2015).

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25. F. Zhang, N. Can, S. Hafiz, M. Monavarian, S. Das, V. Avrutin, Ü. Özgür, and H. Morkoç, “Improvement of carrier injection symmetry and quantum efficiency in InGaN LEDs with Mg delta doped barriers”, Appl. Phys. Lett. 106, 181105 (2015).

26. E. Šermukšnis, J. Liberis, M. Ramonas, A. Matulionis, M. Toporkov, H. Y. Liu, V. Avrutin, Ü. Özgür, and H. Morkoç, “Hot-electron energy relaxation time in Ga-doped ZnO films” J. Appl. Phys. 117, 065704 (2015).

27. Z. Zolnai, M. Toporkov, J. Volk, D. O. Demchenko, S. Okur, Z. Szabo, Ü. Özgür, H. Morkoç, V. Avrutin, and E. Kotai, “Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques”, Appl. Surf. Sci. 327, 43 (2015).

28. E. Korhonen, V. Prozheeva, F. Tuomisto, O. Bierwagen, J. Speck, M. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO”, Semicond. Sci. Technol. 30, 024011 (2015).

29. E. Šermukšnis, J. Liberis, A. Matulionis, V. Avrutin, R. Ferreyra, Ü. Özgür, and H. Morkoç, “Hot-electron real-space transfer and longitudinal transport in AlGaN/AlN/{AlGaN/GaN} channels”, Semicond. Sci. Technol. 30, 035003 (2015).

30. S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, and B. Gil, “Determination of carrier diffusion length in GaN”, J. Appl. Phys. 117, 013106 (2015).

2014

31. N. Izyumskaya, D. Demchenko, V. Avrutin, Ü. Özgür, and H. Morkoç, “Two-dimensional MoS2 as a new material for electronic devices”, Turk. J. Phys. 38, 478 (2014).

32. V. Avrutin, S. A. Hafiz, F. Zhang, Ü. Özgür, E. Bellotti, F. Bertazzi, M. Goano, A. Matulionis, A. T. Roberts, H. O. Everitt, and H. Morkoç, “Saga of efficiency degradation at high injection in InGaN light emitting diodes”, Turk. J. Phys. 38, 269 (2014).

33. M. Toporkov, V. Avrutin, S. Okur, N. Izyumskaya, D. Demchenko, J. Volk, D. J. Smith, H. Morkoç, and Ü. Özgür, “Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap ”, Journal of Crystal Growth 402, 60 (2014).

34. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, N. Izyumskaya, M. Monavarian, F. Zhang, S. Okur, V. Avrutin, Ü. Özgür, and H. Morkoç, “Recombination dynamics of excitons with low nonradiative component in semipolar (10-11)-oriented GaN/AlGaN quantum wells”, J. Appl. Phys. 116, 093517 (2014).

35. Andrew B. Yankovich, Alexander V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, Brandon Van Leer, H. Morkoç, and Paul M. Voyles, “Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose”, Microscopy and Microanalysis 20, 864 (2014).

36. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells”, J. Appl. Phys. 115, 073510 (2014).

2013

37. S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, V. Avrutin, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, and Ü. Özgür, “Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1-101) GaN revealed from spatially resolved luminescence”, Applied Physics Letters 103, 211908 (2013).

38. N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball, “Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges”, Applied Physics Letters 103, 193507 (2013).

39. C. Y. Zhu, F. Zhang, R. A. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, “Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: effects of field and temperature”, Applied Physics Letters 103, 163504 (2013).

40. N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, “Optical studies of strain and defect distribution in semipolar (1-101) GaN on patterned Si substrates”, Journal of Applied Physics 114, 113502 (2013).

41. V. Avrutin, S. A. Hafiz, F. Zhang, Ü. Özgür, H. Morkoç, and A. Matulionis, “InGaN LEDs: Efficiency-limiting processes at high injection”, J. Vac. Sci. Technol. A 31, 050809 (2013).

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42. F. Zhang, X. Li, S. Hafiz, S. Okur, V. Avrutin, Ü. Özgür, and H. Morkoç, “The effect of staircase electron injector design on electron overflow in InGaN LEDs”, Applied Physics Letters 103, 051122 (2013).

43. L. Dong, J. V. Mantese, V. Avrutin, Ü. Özgür, H. Morkoç, and S. P. Alpay, “Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells”, J. Appl. Phys. 114, 043715 (2013).

44. K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoç, Ü. Özgür, C. Giesen, Ö. Tuna, and M. Heuken, “Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer”, Journal of Applied Physics 113, 103701 (2013).

45. H. Liu, V. Avrutin, C. Y. Zhu, Ü. Özgür, J. Yang, C. Z. Liu, and H. Morkoç, “Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique”, Journal of Applied Physics 113, 044108 (2013).

2012

46. A.V. Kvit, A.B. Yankovich, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, “Impurity Distribution and Microstructure of Ga-doped ZnO films grown by molecular beam epitaxy”, Journal of Applied Physics 112, 123527 (2012).

47. L. Ardaravičius, O. Kiprijanovič, J. Liberis, A. Matulionis, X. Li, F. Zhang, M. Wu, V. Avrutin, Ü. Özgür, and H. Morkoç, “Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel”, Semicond. Sci. Technol. 27, 122001 (2012).

48. C. Y. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. Ferreyra, A. Matulionis, V. Avrutin, Ü. Özgür, and H. Morkoç, “Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects”, Applied Physics Letters 101, 103502 (2012).

49. H. Y. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç, “Donor behavior of Sb in ZnO”, Journal of Applied Physics 112, 033706 (2012).

50. M. Ťapajna, N. Killat, J. Moereke, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D.E. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball, “Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates”, IEEE Electron Device Letters 33, 1126 (2012).

51. X. Li, S. Okur, F. Zhang, S. A. Hafiz, V. Avrutin, Ü. Özgür, H. Morkoç, and K. Jarašiūnas “Improved quantum efficiency in InGaN light emitting diodes with multi-double heterostructure active regions”, Applied Physics Letters 101, 041115 (2012).

52. H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç, “Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma enhanced molecular beam epitaxy”, Journal of Applied Physics 111, 103713 (2012).

53. C. Y. Zhu, H. Liu, V. Avrutin, Ü. Özgür, and H. Morkoç, “BaSrTiO3 / YIG microwave Phase Shifter with large two-degree of freedom tuning”, Electronics Letters 48, 508 (2012).

54. L. Tarnawska, P. Zaumseil, M. A. Schubert, S. Okur, Ü. Özgür, H. Morkoç, R. Paszkiewicz, P. Storck, and T. Schroeder, “Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)”, Journal of Applied Physics 111, 073509 (2012).

55. C. Kayis, R. A. Ferreyra, C. Y. Zhu, V. Avrutin, Ü. Özgür, H. Morkoç, “The effect of barrier strain on reliability of InxAl1-xN/AlN/GaN heterostructure field-effect transistors”, Phys. Stat. Sol.-Rapid Res. Lett. 6, 163 (2012).

56. X. Li, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. C. Hsu, and A. Matulionis, “Impact of active layer design on InGaN radiative recombination coefficient and LED performance”, Journal of Applied Physics 111, 063112 (2012).

57. N. Killat, M. Montes, J. Pomeroy, T. Paskova, K. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball, “Thermal properties of AlGaN/GaN Heterostructure Field Effect Transistors on Bulk GaN substrates”, IEEE Electron Device Letters 33, 366 (2012).

58. P. Ščajev, K. Jarašiūnas, S. Okur, Ü. Özgür, and H. Morkoç, “Carrier dynamics in bulk GaN”, Journal of Applied Physics 111, 023702 (2012).

59. A. B. Yankovich, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P. M. Voyles, “Hexagonal-based pyramid voids defects in GaN and InGaN”, J. Appl. Phys. 111, 023517 (2012).

60. P. Ščajev, K. Jarašiūnas, Ü. Özgür, H. Morkoç, J. Leach, and T. Paskova, “Anistropy of free-carrier absorption and diffusivity in m-plane GaN”, Applied Physics Letters 100, 022112 (2012).

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2011

61. X. Li, F. Zhang, S. Okur, V. Avrutin, S. J. Liu, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. C. Hsu, and A. Matulionis, “On the Quantum Efficiency of InGaN Light Emitting Diodes: Effects of Active Layer Design, Electron Cooler, and Electron Blocking Layer”, Physica Status Solidi A 208, 2907 (2011).

62. C.Y. Zhu, C. Kayis, M. Wu, X. Li, F. Zhang, V. Avrutin, Ü. Özgür, and H. Morkoç, “Reduction of Flicker Noise in AlGaN/GaN-based HFETs after High Electric Field Stress”, IEEE Electron Dev. Lett. 32, 1513 (2011).

63. C. Kayis, R. A. Ferreyra, M. Wu, X. Li, Ü. Özgür, and H. Morkoç, “Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects”, Applied Physics Letters 99, 063505 (2011).

64. D. O. Demchenko, B. Earles, H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Impurity complexes and conductivity of Ga doped ZnO”, Physical Review B 84, 075201 (2011).

65. C. Kayis, C. Y. Zhu, M. Wu, Ü. Özgür, and H. Morkoç, “Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique”, Journal of Applied Physics 109, 084522 (2011).

66. N. Izyumskaya, S. J. Liu, V. Avrutin, X. F. Ni, M. Wu, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. J. Smith, and H. Morkoç, “Epitaxial lateral overgrowth of nonpolar (1-101) GaN on Si(112) patterned substrates by MOCVD”, Journal of Crystal Growth 314, 129 (2011).

67. Ü. Özgür, X. Ni, X. Li, J. Lee, S. Liu, S. Okur, V. Avrutin, A. Matulionis, and H. Morkoç, “Ballistic transport in InGaN based LEDs: impact on efficiency”, Topical issue in honor of the Nobel Laureate Zh. I. Alferov, Ed. Dieter Bimberg, Semiconductor Science and Technology 26, 014022 (2011).

2010

68. H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Transparent conducting oxides for electrode applications in light emitting and absorbing devices”, Superlattices and Microstructures 48, 458 (2010).

69. J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y. Y. Song, and M. Wu, “Electrically and Magnetically tunable phase shifters based on BST-YIG layered structure”, Journal of Applied Physics 108, 064106 (2010).

70. C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, X. Yang, V. Misra, and P. H. Handel, “Low-frequency noise measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfAlO gate dielectric”, IEEE Electron Device Letters 31, 1041 (2010).

71. M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and C.-Z. Lu, “InAlN/GaN heterostructure field-effect transistors on Fe-doped semiinsulating GaN substrates”, Journal of Vacuum Science and Technology B 28, 908 (2010).

72. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, “The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes”, Physica Status Solidi – Rapid Research Letters 4, 194 (2010).

73. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, and A. Matulionis, “Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them”, Journal of Applied Physics 108, 033112 (2010).

74. X. Li, H. Y. Liu, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “InGaN-based light emitting diodes with Ga-doped ZnO as transparent conducting oxide”, Phys. Stat. Sol. A 207, 1993 (2010).

75. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, Ü. Özgür, and H. Morkoç, “Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency”, Superlattices and Microstructures 48, 133 (2010).

76. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, “InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes”, Applied Physics Letters 97, 031110 (2010).

77. Ü. Özgür, H. Liu, X. Li, X. Ni, and H. Morkoç, “GaN-based Light-Emitting Diodes: Efficiency at High Injection Levels”, Proceedings of the IEEE 98, 1180 (2010).

78. Ü. Özgür, D. Hofstetter, and H. Morkoç, “ZnO Devices and Applications: A review of current status and future prospects”, Proceedings of the IEEE 98, 1255 (2010).

79. V. Avrutin, N. Izyumskaya, Ü. Özgür, D. Silversmith, and H. Morkoç, “Ferromagnetism in ZnO- and GaN-based diluted magnetic semiconductors: Achievements and Challenges”, Proc. of the IEEE 98, 1288 (2010).

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80. J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, and C. E. Patton, “Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3”, Journal of Applied Physics 107, 084511 (2010).

81. J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. Meyer, and I. Vurgaftman, “Bias dependent two-channel conduction in InAlN/AlN/GaN structures”, Journal of Applied Physics 107, 083706 (2010).

82. H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, Ü. Özgür, and H. Morkoç, “Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma-assisted molecular beam epitaxy”, Physica Status Solidi – Rapid Research Letters 4, 70 (2010).

83. S. Gökden, R. Tülek, A. Teke, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, and E. Özbay, “Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel”, Semiconductor Science and Technology 25, 045024, (2010).

84. J. H. Leach, C. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, and K. R. Evans, “Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN HFETs on bulk GaN substrates”, Applied Physics Letters 96, 133505 (2010).

85. J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and C.-Z. Lu, “Carrier Velocity in InAlN/AlN/GaN HFETs on Fe-Doped Bulk GaN substrates”, Applied Physics Letters 96, 102109 (2010).

86. H. Y. Liu, V. Avrutin, B. Xiao, E. Rowe, H. R. Liu, Ü. Özgür, and H. Morkoç, “Epitaxial relationship of MBE grown barium hexaferrite (0001) films on sapphire (0001)”, Journal of Crystal Growth 312, 671 (2010).

87. J. H. Leach, M. Wu. X. Ni, X. Li, Ü. Özgür, and H. Morkoç, “Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures”, Phys. Status Solidi A 207, 211 (2010).

2009

88. J. H. Leach, C. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, and Ç. Kurdak, “Degradation in GaN-based HFETs: Role of hot phonons”, Applied Physics Letters 95, 223504 (2009).

89. B. Xiao, Hongrui Liu, V. Avrutin, J. H. Leach, E. Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L. M. B. Alldredge, S. W. Kirchoefer, and J. M. Pond, “Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer”, Applied Physics Letters 95, 212901 (2009).

90. J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, “On carrier spillover in c- and m-plane InGaN light emitting diodes”, Applied Physics Letters 95, 201113 (2009).

91. Ü. Özgür, Ya. I. Alivov, and H. Morkoç, “Microwave ferrites, Part 2: Passive Components and Electrical Tuning”, Journal of Materials Science: Materials in Electronics 20, 911 (2009).

92. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, “Efficiency retention at high injection levels in InGaN LEDs on m-plane GaN”, Appl. Phys. Lett. 95, 121107 (2009).

93. X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, and H. Morkoç, “Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition”, Applied Physics Letters 95, 111102 (2009).

94. X. Ni, J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland, and K.R. Evans, “Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN ”, Applied Physics Letters 95, 101106 (2009). Top 20 Most downloaded, September 2009

95. Ü. Özgür, Ya. I. Alivov, and H. Morkoç, “Microwave ferrites, Part 1: Fundamental Properties”, Journal of Materials Science: Materials in Electronics 20, 789 (2009).

96. L. Zhou, X. Ni, Ü. Özgür, H. Morkoç, and D. J. Smith, “High resolution imaging of 1:1 [0001] ordered a-plane Al0.3Ga0.7N”, Journal of Crystal Growth 311, 4162 (2009).

97. B. Xiao, V. Avrutin, H. Liu, E. Rowe, J. Leach, X. Gu, Ü. Özgür, and Hadis Morkoç, “Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films”, Appl. Phys. Lett. 95, 012907 (2009).

98. A. Teke, S. Gökden, R. Tülek, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, and E. Özbay, “The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures”, New Journal of Physics 11, 063031 (2009).

99. L. Zhou, D. J. Smith, X. Ni, Ü. Özgür, H. Morkoç, R. P. Devaty, and W. J. Choyke, “Atomic structure of the m-plane AlN/SiC interface”, Journal of Crystal Growth 311, 1456 (2009).

100. V. Avrutin, H. Y. Liu, N. Izyumskaya, B. Xiao, Ü. Özgür, and H. Morkoç, “Growth of Pb(TiZr)O3 thin films by metal-organic molecular beam epitaxy”, J. Crystal Growth 311, 1333 (2009).

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101. X. Ni, R. Shimada, T. D. Kang, J. Leach, Ü. Özgür, and H. Morkoç, “GaN-based vertical cavities with crack-free high reflectivity patterned AlGaN/GaN distributed Bragg reflectors”, Phys. Stat. Sol. A 206, 367 (2009).

2008

102. T. D. Kang, B. Xiao, V. Avrutin, Ü. Özgür, H. Morkoç, J. W. Park, H. S. Lee, H. Lee, X. Wang, and D. J. Smith, “Large electrooptic effect in single crystal Pb(Zr,Ti)O3 (001) measured by spectroscopic ellipsometry”, Journal of Applied Physics 104, 093103 (2008).

103. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, “Reduction of efficiency droop in InGaN light-emitting-diodes by coupled quantum wells”, Applied Physics Letters 93, 171113 (2008). Featured in Semiconductor Today online.

104. J. Xie, X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, “On the efficiency droop in InGaN MQW blue LEDs and its reduction with p-doped quantum well barriers”, Applied Physics Letters 93, 121107 (2008). Featured in Compound Semiconductor online, Semiconductor Today online.

105. B. Xiao, V. Avrutin, H. Liu, Ü. Özgür, H. Morkoç, and C. Lu, “Large pyroelectric effect in undoped epitaxial PZT thin films on STO substrates”, Applied Physics Letters 93, 052913 (2008).

106. R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoç, “Cavity polaritons in ZnO-based hybrid microcavities”, Applied Physics Letters 92, 011127 (2008).

2007

107. J. Xie, J. H. Leach, X. Ni, M. Wu, R. Shimada, Ü. Özgür, and H. Morkoç, “Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers”, Applied Physics Letters 91, 262102 (2007).

108. J. Leach, Ü. Özgür, and H. Morkoç, “Evolution of surface morphology of GaN thin films during photoelectrochemical etching”, Journal of Vacuum Science and Technology B 25, 1832 (2007).

109. J. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morkoç, “High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors”, Applied Physics Letters 91, 132116 (2007).

110. X. F. Ni, Ü. Özgür, H. Morkoç, V. Kasliwal, J. C. Moore, A. A. Baski, Z. Liliental-Weber, and H. O. Everitt, “Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition”, Journal of Applied Physics 102, 053506 (2007).

111. J. Xie, S. Chevtchenko, Ü. Özgür, and H. Morkoç, “Defect reduction in GaN epilayers grown by metalorganic chemical vapor deposition with in situ SiNx nanonetwork”, Appl. Phys.Lett. 90, 262112 (2007).

112. X. F. Ni, Ü. Özgür, A. A. Baski, H. Morkoç, L. Zhou, D. J. Smith, and C. A. Tran, “Epitaxial lateral overgrowth of (11-22) semi-polar GaN on (1-100)m-plane sapphire by metalorganic chemical vapor deposition”, Applied Physics Letters 90, 182109 (2007).

113. J. Xie, Ü. Özgür, Y. Fu. X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt, “Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nano-network”, Applied Physics Letters 90, 041107 (2007).

114. J. C. Moore, V. Kasliwal, A. A. Baski, X. Ni, Ü. Özgür, and H. Morkoç, “Local electronic and optical behavior of a-plane GaN grown via epitaxial lateral overgrowth”, Appl. Phys. Lett. 90, 011913 (2007).

2006

115. X. F. Ni, Ü. Özgür, Y. Fu, N. Biyikli, J. Xie, A. A. Baski, H. Morkoç, and Z. Liliental-Weber, “Defect reduction

in 0)2(11 a-plane GaN by two-stage epitaxial lateral overgrowth”, Appl. Phys. Lett. 89, 262105 (2006).

116. Ü. Özgür, X. F. Ni, Y. Fu, H. Morkoç, and H. O. Everitt, “Near field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN”, Applied Physics Letters 89, 262117 (2006).

117. N. Biyikli, Ü. Özgür, X. F. Ni, Y. Fu, H. Morkoç, and Ç. Kurdak, “Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1–xN/AlN/GaN heterostructures”, Journal of Applied Physics 100, 103702 (2006).

118. S. Chevtchenko, J. C. Moore, Ü. Özgür, X. Gu, A. A. Baski, H. Morkoç, B. Nemeth, and J. E. Nause, “Comparative study of surface properties of Zn- and O-face bulk ZnO”, Appl. Phys. Lett. 89, 182111 (2006).

119. Ç. Kurdak, N. Biyikli, Ü. Özgür, H. Morkoç, and V. Litvinov, “Weak antilocalization and zero-field electron spin splitting in AlxGa1-xN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas”, Physical Review B 74, 113308 (2006).

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120. G.S. Lee, H.S. Lee, T.D. Kang, H. Lee, C. Liu, B. Xiao, Ü. Özgür, & H. Morkoç, “Spectroscopic Ellipsometry and Absorption Study of Zn1-xMnxO/Al2O3 (0≤x≤0.08) Thin Films”, J. Appl. Phys. 99, 113532 (2006).

121. Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, L. Zhou, D. J. Smith, C. K. Inoki, and T. S. Kuan, “Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy”, J. Appl. Phys. 99, 033518 (2006).

2005

122. F. Yun, Y. T. Moon, Y. Fu, K. Zhu, Ü. Özgür, H. Morkoç, C. K. Inoki, T. S. Kuan, A. Sagar, R. M. Feenstra, “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy”, Journal of Applied Physics 98, 123502 (2005).

123. Ya. I. Alivov, D. Johnstone, Ü. Özgür, V. Avrutin, Q. Fan, S. Akarca-Biyikli, and H Morkoç, “Electrical and Optical Properties of n-ZnO/p-SiC heterojunctions”, Jpn. J. Appl. Phys. - Part 1 44, 7281 (2005).

124. Ya. I. Alivov, Ü. Özgür, S. Doğan, C. Liu, Y. T. Moon, X. Gu, V. Avrutin, Y. Fu, and H Morkoç, “Forward-current electroluminescence from n-GaN/n-ZnO/p-GaN double heterostructure diodes”, Solid-State Electronics 49, 1693 (2005).

125. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doğan, V. Avrutin, S. –J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices”, Journal of Applied Physics 98, 041301 (2005).

126. K. T. Tsen, W. Liang, D. K. Ferry, H. Lu, W. J. Schaff, Ü. Özgür, Y. Fu, Y. T. Moon, H. Morkoç, and H. O. Everitt, “Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors”, Superlattices and Microstructures 38, 77 (2005).

127. Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, “Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy”, Applied Physics Letters 86, 241108 (2005).

128. Ü. Özgür, Y. Fu, Y.T. Moon, F. Yun, H. Morkoç, H.O. Everitt, S. S. Park, & K. Y. Lee, “Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates”, Appl. Phys. Lett. 86, 232106 (2005).

129. Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, and H. O. Everitt, “Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers”, J. Appl. Phys. 97, 103704 (2005).

130. Yi Fu, Y. T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Effectiveness of TiN Templates on the Reduction of Threading Dislocations in GaN Overgrowth by Organometallic Vapor-Phase Epitaxy”, Applied Physics Letters 86, 043108 (2005).

2004

131. A. Teke, Ü. Özgür, S. Doğan, X. Gu, H. Morkoç, B. Nemeth, J. Nause, and H. O. Everitt, “Excitonic fine structure and recombination dynamics in single crystalline ZnO”, Physical Review B 70, 195207 (2004).

132. Ü. Özgür, A. Teke, C. Liu, S.–J. Cho, H. Morkoç, and H. O. Everitt, “Stimulated Emission and Time-Resolved Photoluminescence in RF-Sputtered ZnO Thin Films”, Applied Physics Letters 84, 3223 (2004).

2003 and before

133. Ü. Özgür, H. O. Everitt, L. He, and H. Morkoç, "Stimulated Emission and Ultrafast Carrier Relaxation in AlGaN/GaN Multiple Quantum Wells", Applied Physics Letters 82, 4080 (2003).

134. Ü. Özgür and H. O. Everitt, "Ultrafast Carrier Relaxation in GaN, InGaN, and an In0.07Ga0.93N/In0.12Ga0.88N Multiple Quantum Well", Physical Review B 67, 155308 (2003).

135. Ü. Özgür, H. O. Everitt, S. Keller, and S. P. DenBaars, "Stimulated Emission and Ultrafast Carrier Relaxation in InGaN Multiple Quantum Wells", Applied Physics Letters 82, 1416 (2003).

136. Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, "Systematic measurement of AlGaN Refractive Indices", Applied Physics Letters 79, 4103 (2001).

137. Ü. Özgür, C. -W. Lee, and H. O. Everitt, "Control of Coherent Phonons in InGaN Multiple Quantum Wells", Physical Review Letters 86, 5604 (2001).

138. Ü. Özgür, M. J. Bergmann, H. C. Casey, Jr., H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, "Ultrafast optical characterization of carrier capture times in InGaN MQWs", Appl.Phys.Lett. 77, 109 (2000).

139. C. W. Teng, J. F. Muth, Ü. Özgür, M. J. Bergmann, H. O. Everitt, A. K. Sharma, C. Jin, and J. Narayan, “Refractive indices and absorption coefficients of MgxZn1-xO alloys”, Appl. Phys. Lett. 76, 979 (2000).

140. M. J. Bergmann, Ü. Özgür, H. C. Casey, Jr., H. O. Everitt, and J. F. Muth, "Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers", Applied Physics Letters 75, 67 (1999).

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141. M. J. Bergmann, Ü. Özgür, H. C. Casey, Jr., J. F. Muth, Y. C. Chang, R. M. Kolbas, R. A. Rao, C. B. Eom, and M. Schurman, "Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer", Appl. Phys. Lett. 74, 3188 (1999).

Refereed Conference Proceedings

2018

142. K. Ding, V. Avrutin, N. Izyumskaya, S. Metzner, F. Bertram, J. Christen, Ü. Özgür, H. Morkoç, “Recent progress in nonpolar and semi-polkar GaN light-emitters on patterned Si substrates”, Proc. of SPIE, “Gallium Nitride Materials and Devices XIII” (2018). (Invited)

2017

143. A. V. Filippas and U. Ozgur, “Capstone: Rules of Engagement”, Proceedings of ASEE Annual Conference, Columbus, OH, June 25-28, 2017. Paper ID #19149: https://peer.asee.org/28008

144. E. Šermukšnis, J. Liberis, A. Simukovic, A. Matulionis, Md B. Ullah, M. Toporkov, V. Avrutin, Ü. Özgür, and Hadis Morkoç, “Hot electron noise spectroscopy for HFET channels”, Proc. of the International Conference on Noise and Fluctuations (ICNF), 2017. http://ieeexplore.ieee.org/document/7985979/?part=1

145. Md B. Ullah, M. Toporkov, V. Avrutin, Ü. Özgür, D. J. Smith, and H. Morkoç, “Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices”, Proc. of SPIE, “Oxide-Based Materials and Devices VIII” 10105, 101050J (2017). (Invited)

146. M. Monavarian, N. Izyumskaya, M. Müller, S. Metzner, P. Veit, S. Das, Ü. Özgür, F. Bertram, J. Christen, H. Morkoç, and V. Avrutin, “Effect of nanoporous SiNx interlayer on propagation of extended defects in semipolar (11-22) oriented GaN”, Phys. Stat. Sol. C 1700024 (2017). DOI 10.1002/pssc.201700024 (Proc. of the International Workshop on Nitride Semiconductors (IWN) Orlando, FL, October 2-7, 2016)

2016

147. M. Monavarian, S. Hafiz, S. Das, N. Izyumskaya, Ü. Özgür, H. Morkoç, and V. Avrutin, “Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers”, Proc. of SPIE, “Gallium Nitride Materials and Devices XI” 9748, 974825 (2016).

148. M. Monavarian, D. Rosales, B. Gil, N. Izyumskaya, S. Das, Ü. Özgür, H. Morkoç, and V. Avrutin, “Exciton localization in (11-22)-oriented semipolar InGaN multiple quantum wells”, Proc. of SPIE, “Gallium Nitride Materials and Devices XI” 9748, 974826 (2016).

149. M. Monavarian, S. Hafiz, N. Izyumskaya, S. Das, Ü. Özgür, H. Morkoç, and V. Avrutin, “Wurtzite/zincblende electronic band alignment in basal stacking faults in semipolar GaN”, Proceedings of SPIE, “Gallium Nitride Materials and Devices XI” 9748, 974827 (2016).

150. S. Hafiz, N. Andrade, M. Monavarian, N. Izyumskaya, S. Das, F. Zhang, V. Avrutin, H. Morkoç, and Ü. Özgür, “Optical investigation of microscopic defect distribution in semipolar (1-101) and (11-22) InGaN light-emitting diodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices XI” 9748, 974828 (2016).

151. M. Toporkov, Md B. Ullah, S. Hafiz, T. Nakagawara, V. Avrutin, H. Morkoç, and Ü. Özgür, “Exciton localization and large Stokes shift in quaternary BeMgZnO grown by Molecular Beam Epitaxy”, Proc. of SPIE, “Oxide-Based Materials and Devices VII” 9749, 974910 (2016).

2015

152. E. Šermukšnis, J. Liberis, A. Matulionis, M. Toporkov, V. Avrutin, Ü. Özgür, and Hadis Morkoç, “Hot electron noise and energy relaxation in wurtzite ZnO”, Proceedings of the 23rd International Conference on Noise and Fluctuations, ICNF2015, DOI:10.1109/ICNF.2015.7288567, June 2-5, Xi’an, China, (2015).

153. N. Can, S. Okur, M. Monavarian, F. Zhang, V. Avrutin, H. Morkoç, A. Teke, and Ü. Özgür, “Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients”, Proc. of SPIE, “Gallium Nitride Materials and Devices X” 9363, 93632U (2015).

154. S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, and Ü. Özgür, “Enhancement of coherent acoustic phonons in InGaN multiple quantum wells”, Proc. of SPIE, “Gallium Nitride Materials and Devices X” 9363, 93632J (2015).

155. S. Okur, A. Franke, F. Zhang, V. Avrutin, H. Morkoç, F. Bertram, J. Christen, and Ü. Özgür, “Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates”, Proc. of SPIE, “Gallium Nitride Materials and Devices X” 9363, 93632O (2015).

156. M. Monavarian, S. Metzner, N. Izyumskaya, S. Okur, F. Zhang, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, “Enhancement of optical and structural quality of semipolar (11-

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22)GaN by introducing nanoporous SiNx interlayers”, Proc. of SPIE, “Gallium Nitride Materials and Devices X” 9363, 93632I (2015).

157. S. Okur, M. Monavarian, S. Das, N. Izyumskaya, F. Zhang, V. Avrutin, H. Morkoç, and Ü. Özgür, “Strong carrier localization in stacking faults in semipolar (11-22)GaN”, Proc. of SPIE, “Gallium Nitride Materials and Devices X” 9363, 93632N (2015).

158. M. Monavarian, S. Metzner, N. Izyumskaya, S. Okur, F. Zhang, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, “Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes”, Proc. of SPIE, “Gallium Nitride Materials & Devices X” 9363, 93632P (2015).

159. D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semipolar AlGaN/GaN MQWs”, Proc. SPIE, “Gallium Nitride Materials & Devices X” 9363, 93630J (2015).

2014

160. S. Hafiz, S. Metzner, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, C. Karbaum, F. Bertram, J. Christen, B. Gil, and Ü. Özgür, “Determination of carrier diffusion length in p- and n-GaN”, Proc. of SPIE, “Gallium Nitride Materials and Devices IX” 8986, 89862C (2014).

161. S. Hafiz, F. Zhang, M. Monavarian, S. Okur, V. Avrutin, H. Morkoç, and Ü. Özgür, “Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements”, Proc. of SPIE, “Light Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII” 9003, 90031R (2014).

162. N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, “Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach”, Proc. of SPIE, “Gallium Nitride Materials and Devices IX” 8986, 898628 (2014).

163. S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, and Ü. Özgür, “Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si”, Proc. of SPIE, “Gallium Nitride Materials and Devices IX” 8986, 89862B (2014).

164. D. Rosales, B. Gil, T. Bertagnon, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs”, Proc. of SPIE, “Gallium Nitride Materials and Devices IX” 8986, 89860L (2014).

2013

165. E. Šermukšnis, M. Ramonas, J. Liberis, A. Matulionis, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, and Hadis Morkoç, “Electron energy relaxation in wurtzite ZnO and GaN”, ICNF2013, 22nd International Conf. on Noise and Fluctuations, Montpellier, France, June 24-28, 2013, 10.1109/ICNF.2013.6579008.

166. A.B. Yankovich, A.V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, “Absence of composition fluctuations in aberration-corrected STEM images of an InGaN quantum well at low dose”, Materials Research Society (MRS) Symposium Proceedings 1432, 73 (2012), MRS Spring meeting, April 9-13, 2012, San Francisco, CA.

167. H. Liu, V. Avrutin, C. Zhu, J. H. Leach, E. Rowe, L. Zhou, D. Smith, Ü. Özgür, and H. Morkoç, “Three-step deposition method for improvement of the dielectric properties of BST thin films”, Mater. Res. Soc. (MRS) Symp. Proc. 1397, 13 (2012), http://dx.doi.org/10.1557/opl.2012.451, MRS Fall meeting, Nov.28–Dec.2, 2011, Boston, MA.

168. S. Okur, R. Shimada, F. Zhang, S. Hafiz, J. Lee, V. Avrutin, H. Morkoç, A. Franke, F. Bertram, J. Christen, and Ü. Özgür, “Weak and strong coupling regimes in GaN-based vertical cavities with semiconductor/dielectric and all dielectric reflectors”, International Workshop on Nitride Semiconductors, Sapporo, Japan, 2012, Jpn. J. Appl. Phys. 52, 08JH03 (2013).

169. C. Zhu, F. Zhang, R. A. Ferreyra, X. Li, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç, “Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: Role of Surface Effects”, Proc. of SPIE, “Gallium Nitride Materials and Devices VIII” 8625, 86252H (2013).

170. N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, “Depth distribution of carrier lifetimes in semipolar (1-101)GaN grown by MOCVD on patterned Si substrates”, Proc. of SPIE, “Gallium Nitride Materials and Devices VIII” 8225, 86252G (2013).

171. F. Zhang, S. Okur, S. Hafiz, V. Avrutin, Ü. Özgür, and H. Morkoç, “GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors”, Proc. of SPIE, “Gallium Nitride Materials and Devices VIII” 8625, 86252F (2013).

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172. S. Okur, K. Jarašiūnas, S. Hafiz, J. Leach, T. Paskova, V. Avrutin, H. Morkoç, and Ü. Özgür, “Recombination dynamics in nonpolar m-plane GaN investigated by time- and polarization-resolved photoluminescence”, Proc. of SPIE, “Gallium Nitride Materials and Devices VIII” 8625, 86252D (2013).

173. R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç, “Microwave performance of AlGaN/AlN/GaN-based single and coupled channel HFETs”, Proc. of SPIE, “Gallium Nitride Materials and Devices VIII” 8625, 86252B (2013).

174. F. Zhang, S. A. Hafiz, X. Li, S. Okur, V. Avrutin, Ü. Özgür, and H. Morkoç, “InGaN-based multi-double heterostructure light emitting diodes with electron injection layers”, Proc. of SPIE, “Gallium Nitride Materials and Devices VIII” 8625, 86251J (2013).

2012

175. A. Matulionis, J. Liberis, E. Šermukšnis, L. Ardaravičius, A. Šimukovič, C. Kayis, C.Y. Zhu, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, “Window for better reliability of nitride heterostructure field effect transistors”, Microelectronics Reliability 52, 2149 (2012) (Proceedings of the 23rd European Symposium on Reliability of Electron Devices (ESREF), Failure Physics and Analysis, October 1-5, 2012, Cagliari, Italy)

176. K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, Ü. Özgür, and H. Morkoç, “Carrier diffusivity in highly excited bulk SiC, GaN, and diamond crystals by optical probes”, Materials Science Forum 717-720, 309 (2012). (Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 11-16, 2011, Cleveland, OH)

177. C. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, “Degradation mechanisms of InAlN/GaN based HFETs under high electric field stress”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 826225 (2012).

178. R. A. Ferreyra, C. Kayis, C. Zhu, V. Avrutin, Ü. Özgür, and H. Morkoç, “Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 82621U (2012).

179. A.B. Yankovich, A.V. Kvit, H.Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, “Pyramid nano-voids in GaN and InGaN”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 826205 (2012).

180. F. Zhang, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T.S. Hsu, and A. Matulionis, “The Impact of Active Layer Design on Quantum Efficiency of InGaN Light Emitting Diodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 82621G (2012).

181. H.Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, A.B. Yankovich, A.V. Kvit, P.M. Voyles, and H. Morkoç, “Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 826226 (2012).

182. K. Jarašiūnas, P. Ščajev, S. Nargelas, R. Aleksiejūnas, J. Leach, T. Paskova, S. Okur, Ü. Özgür, and H. Morkoç, “Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 82620G (2012).

183. T. Malinauskas, A. Kadys, T. Grinys, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, J. Mickevičius, R. Tomašiūnas, K. Jarašiūnas, M. Vengris, S. Okur, X. Li, F. Zhang, V. Avrutin, Ü. Özgür, and H. Morkoç, “Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells”, Proc. of SPIE, “Gallium Nitride Materials and Devices VII” 8262, 82621S (2012).

184. C. Kayis, R. A. Ferreyra, M. Wu, X. Li, Ü. Özgür, A. Matulionis, and H. Morkoç, “Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot phonon effects”, Proc. SPIE, “Gallium Nitride Materials & Devices VII” 8262, 82621W (2012).

185. N. Izyumskaya, S. J. Liu, V. Avrutin, S. Okur, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. J. Smith, and H. Morkoç, “Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates”, Proc. SPIE, “Gallium Nitride Materials and Devices VII” 8262, 826224 (2012).

186. P. Ščajev, K. Jarašiūnas, S. Okur, Ü. Özgür, and H. Morkoç, “Carrier dynamics under two- and single-photon excitation in bulk GaN”, Physica Status Solidi B 249, 503 (2012). (Selected from the Proc. of the 9th International Conf. on Nitride Semiconductors Glasgow, UK, July 10-15, 2011).

2011

187. H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, S. Wolgast, C. Kurdak, A. B. Yankovich, A. Kvit, P. Voyles, Ü. Özgür, and H. Morkoç, “Effect of growth conditions on electronic and structural properties of

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GZO films grown by plasma-enhanced molecular beam epitaxy on p-GaN(0001)/sapphire templates”, Mater. Res. Soc. (MRS) Symp. Proc. 1315, 107 (2011). (MRS Fall Meeting, Nov.29–Dec.3, 2010, Boston, MA, Transparent Conducting Oxides and Applications)

188. X. Li, X. Ni, H. Y. Liu, F. Zhang, S. Liu, J. Lee, V. Avrutin, Ü. Özgür, T. Paskova, G. Mulholland, K. R. Evans, and H. Morkoç, “On the reduction of efficiency loss in polar c-plane and nonpolar m-plane InGaN light emitting diodes”, Physica Status Solidi C 8, 1560 (2011). (Proceedings of the 3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, July 4-7, 2010).

189. H. Y. Liu, X. Li, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç, “InGaN based light emitting diodes utilizing Ga-doped ZnO as a highly transparent contact to p-GaN”, Physica Status Solidi C 8, 1548 (2011). (Proceedings of the 3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, July 4-7, 2010).

190. C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, X. Yang, V. Misra, and P. H. Handel, “Measurements of generation-recombination effect by low-frequency phase noise technique in AlGaN/GaN MOSHFETs”, Physica Status Solidi C 8, 1539 (2011). (Proceedings of the 3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, July 4-7, 2010).

191. H. Gao, J. Lee, X. Ni, J. Leach, Ü. Özgür, and H. Morkoç, “Deep Inductively Coupled Plasma Etching of ELO-GaN With High Fill Factor”, Proc. SPIE, “Gallium Nitride Materials & Devices VI” 7939, 793920 (2011).

192. F. Zhang, X. Li, S. Liu, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, and M. Kisin, “Impact of ballistic electron transport on efficiency of InGaN based LEDs”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 793917 (2011).

193. C. Kayis, J. H. Leach , C. Y. Zhu, M. Wu, X. Li, X. Yang, V. Misra, P. H. Handel, Ü. Özgür, and H. Morkoç, “Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 79392F (2011).

194. H. Y. Liu, X. Li, S. Liu, X. Ni, V. Avrutin, N. Izyumskaya, Ü. Özgür, A.B. Yankovich, A.V. Kvit, P.M. Voyles, M.A. Reshchikov, and H. Morkoç, “Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN based light emitting diodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 79392E (2011).

195. A. B. Yankovich, A.V. Kvit, X. Li, F. Zhang, V. Avrutin, H.Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P. M. Voyles, “Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 79391E (2011).

196. N. Izyumskaya, S.J. Liu, S. Okur, V. Avrutin, M. Wu, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, D.J. Smith, and H. Morkoç, “Optical properties of nonpolar (1-100) and semipolar (1-101) GaN grown by MOCVD on Si patterned substrates”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 79391W (2011).

197. J.H. Leach, N. Biswas, T. Paskova, E.A. Preble, K.R. Evans, M. Wu, X. Ni, X. Li, Ü. Özgür, and H. Morkoç, “Effect of Substrate Offcut on AlGaN/GaN HFET structures on Bulk GaN Substrates”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 79390E (2011).

198. C. Kayis, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, and H. Morkoç, “Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors”, Proc. of SPIE, “Gallium Nitride Materials and Devices VI” 7939, 79392G (2011).

2010

199. H. Y. Liu, X. Li, X. Ni, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “InGaN light emitting diodes with highly transparent ZnO:Ga electrodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices V” 7602, 76020I (2010).

200. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, and H. Morkoç, “Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices V” 7602, 76021R (2010).

201. J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland and K. R. Evans, “On carrier spillover in c- and m-plane InGaN light emitting diodes”, Proc. of SPIE, “Gallium Nitride Materials and Devices V” 7602, 760224, (2010).

202. J. Lee, X. Ni, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland and K. R. Evans, “Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si”, Proc. of SPIE, “Gallium Nitride Materials and Devices V” 7602, 76021N, (2010).

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203. X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, F. Bertram, J. Christen, L. Zhou, and D. J. Smith, “Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition”, Proc. of SPIE, “Gallium Nitride Materials and Devices V” 7602, 760220 (2010).

204. J. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, and H. Morkoç, “Measurements of gate lag in high quality nearly lattice matched InAlN/AlN/GaN HFET structures”, Proc. of SPIE, “Gallium Nitride Materials and Devices V” 7602, 76020O (2010).

205. V. Avrutin, H. Y. Liu, N. Izyumskaya, M. A. Reshchikov, Ü. Özgür, A. V. Kvit, P. M. Voyles, and H. Morkoç, “Effect of growth conditions on structural and electrical properties of Ga-doped films grown by plasma-assisted MBE”, Materials Research Society (MRS) Symposium Proceedings 1201, 115 (2010). (MRS Fall Meeting November 30 – December 4, 2009, Boston, MA, Zinc Oxide and Related Materials)

206. X. Ni, X. Li, J. Lee, H. Y. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, “On the light emission in GaN-based heterostructures at high current densities”, Mater. Res. Soc. (MRS) Symp. Proc. 1202, 159 (2010). (MRS Fall Meeting Nov.30–Dec.4, 2009, Boston, MA, III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions)

207. J. H. Leach, C. Zhu, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Ç. Kurdak, and Y.-T. Moon, “Stress test measurements of lattice matched InAlN/AlN/GaN HFET structures”, Physica Status Solidi A 207, 1345 (2010). (Proc. of the 8th International Conference on Nitride Semiconductors (ICNS-8), October 18-23, 2009, Jeju Island, South Korea).

208. J. H. Leach, X. Ni, J. Lee, Ü. Özgür, A. Matulionis, and H. Morkoç, “New twists in LEDs and HFETs based on nitride semiconductors”, Physica Status Solidi A 207, 1091 (2010). (Proc of European Materials Research Society Fall Meeting, Sep. 14-18, 2009, Warsaw, Poland) (cover page).

209. X. Li, H. Liu, X. Ni, Ü. Özgür, and H. Morkoç, “Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs”, Superlattices and Microstructures 47, 118 (2010). (Proc. of Int. Conf. on Physics of Light-Matter Coupling in Nanostructures (PLMCN), April 16-20, 2009, Lecce, Italy).

2009

210. J. Lee, Q. Fan, X. Ni, Ü. Özgür, V. Litvinov, and H. Morkoç, “Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures”, Proc. of SPIE, “Gallium Nitride Materials and Devices IV” 7216, 72160S (2009).

211. X. Ni, X. Li, J. Xie, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, “Reduction of efficiency droop in InGaN-based blue LEDs”, Proc. of SPIE, “Gallium Nitride Materials and Devices IV” 7216, 72161W (2009).

212. X. Ni, R. Shimada, T. D. Kang, J. Leach, Ü. Özgür, and H. Morkoç, “GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors”, Proc. of SPIE, “Gallium Nitride Materials and Devices IV” 7216, 72162F (2009).

213. J. H. Leach, Q. Fan, J. Xie, M. Wu, Ü. Özgür, and H. Morkoç, “Transient current spectroscopy of lattice-matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag”, Proc. of SPIE, “Gallium Nitride Materials and Devices IV” 7216, 72162L (2009).

214. Q. Fan, J. H. Leach, J. Xie, Ü. Özgür, H. Morkoç, L. Zhou, and D. J. Smith, “Two-dimensional electron gas in GaN heterojunction field effect transistor structures with AlN spacer”, Proc. of SPIE, “Gallium Nitride Materials and Devices IV” 7216, 72162N (2009).

215. J. Leach, V. Kovalskii, V. Avrutin, Ü. Özgür, and H. Morkoç, “Observation of magnetoelectric effect and tuning of ferromagnetic resonance frequency using bilayers formed of bulk YIG and PMN-PT”, Materials Research Society (MRS) Symposium Proceedings 1110, 48 (2009). (MRS Fall Meeting, December 1–5, 2008, Boston, MA, Theory and Applications of Ferroelectric and Multiferroic Materials)

216. X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, H. Morkoç, R. P. Devaty, and W. J. Choyke, “Epitaxial lateral overgrowth of (1-100) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition”, Materials Science Forum 600-603, 1273 (2009). (Proc. Int. Conf. on SiC and Related Materials (ICSCRM), October 14-19, 2007, Otsu, Japan).

2008

217. H. Cheng, N. Biyikli, Ü. Özgür, Ç. Kurdak, H. Morkoç, and V. I. Litvinov, “Measurement of linear and cubic spin–orbit coupling parameters in AlGaN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas”, Physica E 40, 1586 (2008). (Proc. of the 17th Int. Conf. on Electronic Properties of Two-Dimensional Systems, Genoa, Italy, Jul 15-20, 2007).

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218. V. Avrutin, M. A. Reshchikov, J. Nie, N. Izyumskaya, R. Shimada, Ü. Özgür, J. V. Foreman, H. O. Everitt, C. Litton, and H. Morkoç, “Effect of ion damage on optical properties of ZnO films grown by plasma assisted MBE”, Proc. of SPIE, “Zinc Oxide Materials and Devices III” 6895, 68950Y (2008).

219. R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoç, “ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy”, Proc. of SPIE, “Zinc Oxide Materials and Devices III” 6895, 68950I (2008).

220. X. Ni, R. Shimada, J. H. Leach, J. Xie, Ü. Özgür, and H. Morkoç, “Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire”, Proc. of SPIE, “Gallium Nitride Materials and Devices III” 6894, 689428 (2008).

221. J. Leach, Ü. Özgür, X. Ni, J. Nie, and H. Morkoç, “Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching”, Proc. of SPIE, “Gallium Nitride Materials and Devices III” 6894, 689425 (2008).

222. X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, H. Morkoç, R. P. Devaty, and W. J. Choyke, “Epitaxial lateral overgrowth of (1-100) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition”, Proc. of SPIE, “Gallium Nitride Materials and Devices III” 6894, 689420 (2008).

223. J. Xie, J. Mateo, Ü. Özgür, and H. Morkoç, “GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network”, Proc. of SPIE, “Gallium Nitride Materials and Devices III” 6894, 68941S (2008).

224. J Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morkoç, “AlxIn1-xN/GaN heterostructure field effect transistors”, Proc. of SPIE, “Gallium Nitride Materials and Devices III” 6894, 68941R (2008).

225. Ç. Kurdak, H. Cheng, N. Biyikli, Ü. Özgür, H. Morkoç, and V. I. Litvinov, “Spin-orbit coupling in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas”, Proc. of SPIE, “Gallium Nitride Materials and Devices III” 6894, 68940M (2008).

2007

226. Ya. I. Alivov, Ü. Özgür, X. Gu, C. Liu, Y. Moon, H Morkoç, O. Lopatiuk, L. Chernyak, and C. W. Litton, “Hybrid II-VI and III-V compound double heterostructures and their properties”, J. Electronic Materials 36, 409 (2007). (Proc. of the 48th Electronic Materials Conf. (EMC), University Park, PA, June 28-30, 2006).

227. V. Avrutin, Ü. Özgür, S. Chevtchenko, C. W. Litton, and H. Morkoç, “Optical and magnetic properties of ZnO:V prepared by ion implantation”, Journal of Electronic Materials 36, 483 (2007). (Proc. of the 48th Electronic Materials Conference (EMC), University Park, PA, June 28-30, 2006).

228. N. Izyumskaya, V. Avrutin, Ü. Özgür, Ya. I. Alivov, and H. Morkoç, “Preparation and properties of ZnO and Devices”, Physica Status Solidi B 244, 1439 (2007). (Proc. of the European Materials Research Society (E-MRS) Fall Meeting, Sep.4-8, 2006, Warsaw, Poland, Symp. on Wide Band Gap II-VI Semiconductors).

229. V. Avrutin, Ü. Özgür, N. Izyumskaya, S. Chevtchenko, J. Leach, J.C. Moore, A.A. Baski, C. Litton, H.O. Everitt, K. T. Tsen, M. Abouzaid, P. Ruterana, and H. Morkoç, “Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates”, Proc. of SPIE, “Zinc Oxide Materials and Devices II” 6474, 64741M (2007).

230. Y. Fu, Ü. Özgür, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoç, Y. Ke, R. Devaty, W. J. Choyke, C. K. Inoki, and T. S. Kuan, “Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition”, Proc. of SPIE, “Gallium Nitride Materials and Devices II” 6473, 64731K (2007).

231. Y. Fu, Q. Fan, S. Chevtchenko, Ü. Özgür, H. Morkoç, Y. Ke, R. Devaty, W. J. Choyke, C. K. Inoki, and T. S. Kuan, “Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy”, Proc. of SPIE, “Gallium Nitride Materials and Devices II” 6473, 647305 (2007).

232. J. Xie, Ü. Özgür, Yi Fu, X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt, “Low dislocation density GaN grown by MOCVD with SiNx nano-network”, Proc. of SPIE, “Gallium Nitride Materials and Devices II” 6473, 647304 (2007).

233. X. Ni, Ü. Özgür, H. Morkoç, A. A. Baski, Z. Liliental-Weber, and H. O. Everitt, “Two-step epitaxial lateral

overgrowth of 0)2(11 a-plane GaN by MOCVD”, Proc. of SPIE, “Gallium Nitride Materials and Devices II”

6473,647303 (2007).

234. Ç. Kurdak, N. Biyikli, H. Cheng, Ü. Özgür, H. Morkoç, and V. Litvinov, “Spin-orbit Coupling and Zero-field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-dimensional Electron Gas”, Materials Research Society (MRS) Symposium Proc. 955, 312 (2007). (MRS Fall Meeting, Nov 27 – Dec 1, 2006, Boston, MA, Advances in III-V Nitride Semiconductor Materials and Devices)

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235. X. Ni, Ü. Özgür, Y. Fu, N. Biyikli, H. Morkoç, and Z. Liliental-Weber, “Defect reduction in (11-20) a-plane GaN by two-step epitaxial lateral overgrowth”, Mater. Res. Soc. (MRS) Symp. Proc. 955, 267 (2007). (MRS Fall Meeting, Nov.27–Dec.1, 2006, Boston, MA, Advances in III-V Nitride Semicond. Mater. & Dev.)

236. Y. Fu, X. Ni, J. Xie, N. Biyikli, Q. Fan, S. Chevtchenko, Ü. Özgür, H. Morkoç, Y. Ke, R. Devaty, W. J. Choyke, C. K. Inoki, and T. S. Kuan, “Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy”, Mater. Res. Soc. (MRS) Symp. Proc. 955, 176 (2007). (MRS Fall Meeting, Nov.27–Dec.1, 2006, Boston, MA, Advances in III-V Nitride Semicond. Mater. & Dev.)

237. N. Biyikli, Ü. Özgür, X. F. Ni, Y. Fu, H. Morkoç, and Ç. Kurdak,, “Persistent Photoconductivity in High-mobility AlxGa1-xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy”, Materials Research Society (MRS) Symposium Proceedings 955, 124 (2007). (MRS Fall Meeting, Nov.27–Dec.1, 2006, Boston, MA, Advances in III-V Nitride Semiconductor Materials and Devices)

2006

238. J. Xie, Y. Fu, Ü. Özgür, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt, A. Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Characterization of GaN epitaxial films grown on SiN and TiN porous network templates”, Proc. of SPIE, “Gallium Nitride Materials and Devices” 6121, 61210B (2006).

239. V. Avrutin, Ü. Özgür, J. Xie, Y. Fu, F. Yun, H. Morkoç, and V. Litvinov, “Gd-implanted GaN as a candidate for spin injector”, Proc. of SPIE, “Gallium Nitride Materials and Devices” 6121, 61210U (2006).

240. V. Avrutin, Ü. Özgür, H. Lee, S. Chevtchenko, H. Morkoç, M. Callahan, A. El-Shaer, A. Che Mofor, A. Bakin, A. Waag, N. Izyumskaya, W. Schoch, S. Sorokin and S. Ivanov, "Optical studies of ZnO doped with transition metals”, Proc. of SPIE, “Zinc Oxide Materials and Devices II” 6122, 61220B (2006).

241. V. Avrutin. N. Izyumskaya, Ü. Özgür, A. El-Shaer, H. Lee, W. Schoch, F. Reuss, V. G. Beshenkov, A. N. Pustovit, A. Che Mofor, A. Bakin, H. Morkoç, and A. Waag, “Optical and electrical properties of ZnMnO layers grown by peroxide MBE”, Superlatt. & Microstruct. 39, 291 (2006). (Proc. of European Mater. Res. Soc. Spring Meeting, May 31–June 3, 2005, Strasbourg, France, Symp. G: ZnO & Related Mater. Part 2).

242. C. Liu, B. Xiao, F. Yun, H. Lee, Ü. Özgür, Y. T. Moon, H. Morkoç, M. Abouzaid, and P. Ruterana, “Effect of N doping on magnetic properties of (Zn, Mn)O thin films deposited by radio frequency magnetron sputtering”, Superlatt. & Microstruct. 39, 124 (2006). (Proc. of European Mater. Res. Soc. (E-MRS) Spring Meeting, May 31–June 3, 2005, Strasbourg, France, Symp. G: ZnO and Related Materials Part 2).

243. Ü. Özgür, X. Gu, S. Chevtchenko, J. Spradlin, S. –J. Cho, H. Morkoç, F. H. Pollak, B. Nemeth, and J. E. Nause, “Thermal Conductivity of bulk ZnO after different thermal treatments”, J. Electronic Materials 35, 550 (2006). (Proc. of the 47th Electronic Materials Conf. (EMC), Santa Barbara, CA, June 22-24 2005).

244. Ü. Özgür, C. W. Litton, Y. Fu, Y.-T. Moon, F. Yun, H. O. Everitt, and H. Morkoç, “Improved carrier decay times in GaN epitaxy on SiN and TiN porous network templates”, Mater. Sci. Forum 527-529, 1505 (2006). (Proc. of the 11th Int. Conf. on SiC & Related Materials (ICSCRM), Pittsburgh, PA, Sep.18-23, 2005)

245. C. W. Litton, Ya. I. Alivov, D. Johnstone, Ü. Özgür, V. Avrutin, Q. Fan, S. S. Akarca-Biyikli, K. Zhu, and H. Morkoç, “The Properties of n-ZnO/p-SiC Heterojunctions and Their Potential Applications for Devices”, Materials Science Forum 527-529, 1571 (2006). (Proc. of the 11th Int. Conf. on Silicon Carbide & Related Materials (ICSCRM), Pittsburgh, PA, Sep.18-23, 2005)

2005

246. Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, C. Xie, Q. Fan, H. Morkoç, and P. Ruterana, “High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma assisted molecular beam epitaxy”, Superlatt. & Microstruct. 38, 439 (2005). (Proc. of European Mater. Res. Soc. (E-MRS) Spring Meeting, May 31–June 3, 2005, Strasbourg, France, Symp G: ZnO & Related Mater. Part 2).

247. F. Yun, Y. Fu, Y. T. Moon, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of Threading Dislocations in GaN Overgrowth by MOCVD on TiN Porous Network Templates”, Physica Status Solidi A 202, 749 (2005). (Proceedings of the International Workshop on Nitride Semiconductors (IWN) Pittsburg, PA, July 19-23, 2004).

2004 and before

248. Ü. Özgür, H. O. Everitt, S. Keller, S. P. DenBaars, L. He, and H. Morkoç, “Ultrafast Carrier Relaxation in Group III-Nitride Multiple Quantum Wells”, Proc. of SPIE, “Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII” 5352, 158 (2004). (invited) (presenter)

249. Ü. Özgür, C. -W. Lee, and H. O. Everitt, "Temperature Dependence and Reflection of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells", Physica Status Solidi B 228, 85 (2001). (Proc. of the 4th Int. Conf. on Nitride Semiconductors, Denver, CO, July 16-20, 2001).

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250. G. Webb-Wood, Ü. Özgür, H. O. Everitt, F. Yun, H. Morkoç, "Measurement of AlxGa1-xN Refractive Indices", Physica Status Solidi A 188, 793 (2001). (Proceedings of the Fourth International Conference on Nitride Semiconductors, Denver, CO, July 16-20, 2001).

Additional Conference Presentations / Extended Abstracts (refereed abstracts)

1. D. Fomra, R. Secondo, V. Avrutin, N. Izyumskaya, U. Ozgur, and N. Kinsey, “Optimized Growth of Titanium Nitride Films using Plasma Enhanced Atomic Layer Depostion”, Frontiers in Optics/Laser Science 2018, Sep. 16-20, 2018, Washington, D.C.

2. R. Green, J. Dyke, M. Hays, V. Avrutin, U. Ozgur, M. Mangino, and E. Topsakal, “Dual Band Biocompatible Titanium Nitrite Antennas for Implantable Wireless Telemetry”, 2018 IEEE AP-S/URSI Conference, July 8-13, 2018, Boston, MA.

3. R. Secondo, V. Avrutin, U. Ozgur, and N. Kinsey, “Optimization of Titanium Nitride Films using Plasma Enhanced Atomic Layer Deposition”, CLEO 2018, May 13-18, 2018, San Jose, CA.

4. R. Green, V. Avrutin, U. Ozgur, N. K. Dhar, and E. Topsakal, “Finite size narrow-band transmission filters for real-time short wave IR spectroscopy and imaging”, Image Sensing and Technologies: Materials, Devices, and Applications V, 2018, Orlando FL.

5. U. Hasni, U. Ozgur, and E. Topsakal, “Finite-size passive narrow bandpass filters for shortwave infrared (SWIR) region”, IEEE AP-S Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, San Diego, CA, July 9-14, 2017.

6. R. B. Green, Md. B. Ullah, V. Avrutin, U. Ozgur, H. Morkoc, and E. Topsakal, “Optically Transparent ISM Band Antenna for Wearable Medical Sensors”, IEEE AP-S Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, San Diego, CA, July 9-14, 2017.

7. R. B. Green, A. French, M. Toporkov, V. Avrutin, Ü. Özgür, H. Morkoç, E. Topsakal, “Optically Transparent Gallium-Doped Zinc Oxide (GZO) Antennas for Long-Term Implantation”, USNC-URSI National Radio Science Meeting, Boulder, CO, Jan 6-9 2016.

8. K. Nomeika, S. Miasojedovas, S. Nargelas, R. Aleksiejūnas, P. Ščajev, D. Dargis, V. Avrutin, H. Morkoç, Ü. Özgür, & K. Jarašiūnas, “Excitation dependent carrier dynamics in active regions of multiple InGaN double heterostructures”, 11th Int. Conf. on Nitride Semiconductors, ICNS11, Aug 30 – Sep 4, Beijing, China (2015).

9. M. Toporkov, MD Barkat Ullah, V. Avrutin, D. Demchenko, J. Volk, Z. Zolnai, H. Morkoç, and Ü. Özgür, “Wide bandgap quaternary BeMgZnO for ZnO-based heterostructures with high 2D electron gas density”, 8th Int. Workshop on Zinc Oxide & Related Materials, Sep 7-11, 2014, Niagara Falls, Ontario, Canada.

10. E. Sermuksnis, J. Liberis, A. Matulionis, M. Toporkov, H. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Electron energy relaxation in n-type Wurtzite ZnO”, 8th International Workshop on Zinc Oxide and Related Materials, September 7-11, 2014, Niagara Falls, Ontario, Canada.

11. S. Metzner, M. Müller, S. Petzold, P. Veit, T. Hempel, F. Bertram, S. Okur, N. Izyumskaya, M. Monavarian, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, and J. Christen, “Direct nanoscopic correlation of optical properties and structural defects of semipolar GaN grown on patterned Si substrates by Scanning Transmission Electron Microscope Cathodoluminescence”, International Workshop on Nitride Semiconductors IWN 2014, Wroclaw, Poland, Aug 24-29, 2014.

12. D. Rosales, B. Gil, T. Bretagnon, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “(1-101)-oriented Semi-polar AlGaN-GaN Quantum Wells With Low Non-Radiative Recombination Rates and Free Versus Localized Excitons”, International Workshop on Nitride Semiconductors IWN 2014, Wroclaw, Poland, Aug 24-29, 2014.

13. R. Aleksiejūnas, K. Gelžinytė, K. Nomeika, M. Vengris, K. Jarašiūnas, S. Okur, F. Zhang, V. Avrutin, H. Morkoç, and Ü. Özgür, “Spectrally resolved carrier dynamics in highly excited LED structures with different barrier design”, 10th International Conf. on Nitride Semiconductors, Aug 25-30, 2013, Washington, DC.

14. M. Toporkov, S. Okur, N. Izyumskaya, V. Avrutin, D. Demchenko, Ü. Özgür, and H. Morkoc. “Effect of plasma-enhanced MBE growth conditions on structural and optical properties of quaternary alloy BeMgZnO films”, Materials Research Society (MRS) Fall Meeting, Dec 1-6, 2013, Boston, MA.

15. L. Ardaravicius, O. Kiprijanovic, J. Liberis, E. Šermukšnis, A. Matulionis, R. A. Ferreyra, F. Zhang, V. Avrutin, Ü. Özgür, and H. Morkoç, “High-field drift velocity in camelback channels for heterostructure field-effect transistors”, 10th International Conf. on Nitride Semiconductors, Washington, DC, Aug 25-30, 2013.

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16. A.V. Kvit, A.B. Yankovich, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, “Microstructure and Defects in Gallium-Doped ZnO for Transparent Conducting Oxide Applications”, Materials Research Society (MRS) Fall Meeting, Nov 25-30, 2012, Boston, MA, Oxide Semiconductors.

17. H. Y. Liu, M. Karaliunas, V. Celedinas, K. Jarasiunas, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, Ü. Özgür, and H. Morkoç, “Optical properties of highly conductive and transparent GZO grown by molecular beam epitaxy”, Mater. Res. Soc. (MRS) Fall Meeting, Nov 25-30, 2012, Boston, MA, Oxide Semiconductors.

18. H. Liu, V. Avrutin, C. Zhu, Ü. Özgür, J. Yang, C. Lu, and H. Morkoç, “Effect of strain on dielectric properties of Ba0.5Sr0.5TiO3 thin films on DyScO3 substrates”, Materials Research Society (MRS) Fall Meeting, Oxide Nanoelectronics and Multifunctional Dielectrics, Nov 25–30, 2012, Boston, MA.

19. X. Li, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, K. Jarasiunas, A. Matulionis, S. Metzner, C. Karbaum, F. Bertram, and J. Christen, “Active layer design and quantum efficiency of InGaN light emitting diodes”, Int. Symp. on Semiconductor Light Emitting Devices (ISSLED) July 22-27, 2012, Berlin, Germany.

20. N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, “Carrier lifetimes and indium incorporation in semipolar (1-101) GaN grown by MOCVD on Si patterned substrates”, International Symposium on Semiconductor Light Emitting Devices (ISSLED) July 22-27, 2012, Berlin, Germany.

21. K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, S. Okur, Ü. Özgür, H. Morkoç, O. Tuna, and M Heuken, “On injection-activated nonradiative and radiative recombination in InGaN”, International Symposium on Semiconductor Light Emitting Devices (ISSLED) July 22-27, 2012, Berlin, Germany.

22. R. Shimada, S. Okur, F. Zhang, S. Hafiz, J. Lee, V. Avrutin, Ü. Özgür, and H. Morkoç, “GaN-based vertical cavities with all dielectric reflectors and polar and nonpolar orientations”, International Workshop on Nitride Semiconductors Oct 14-19, 2012, Sapporo, Japan.

23. A. Matulionis, J. Liberis, E. Šermukšnis, L. Ardaravičius, A. Šimukovič, C. Kayis, C.Y. Zhu, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, “Transistor merits and plasmon-enhanced dissipation of LO-mode heat”, Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France, 28-30 May 2012.

24. V. Avrutin, N. Izioumskaia, Ü. Özgür, and H. Morkoç, “Nonpolar and semipolar GaN on GaN, Si, and Sapphire substrates”, German Physical Society (DPG) Meeting, Mar 25-30, 2012, Berlin, Germany.

25. C. Karbaum, F. Bertram, S. Metzner, J. Christen, J. Bläsing, A. Krost, S. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Cathodoluminescence microscopy and X-ray diffraction measurements of semipolar (1-101) GaN structures with InGaN SQWs on patterned Si(001) substrate”, German Physical Society (DPG) Meeting, Mar 25-30, 2012, Berlin, Germany.

26. F. Bertram, S. Metzner, C. Karbaum, J. Christen, S. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Cathodoluminescence microscopy of polarization-reduced GaN directly grown on patterned Si (112) substrate”, SPIE, The International Society of Optical Engineering, Photonics West, “Gallium Nitride Materials and Devices VII”, San Francisco, CA, Jan 21-26, 2012.

27. A.B. Yankovich, A.V. Kvit, X. Li, F. Zhang, V. Avrutin, H.Y. Liu N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, “Indium Composition Variation in Nominally Uniform InGaN Layers Discovered by Aberration-Corrected Z-contrast STEM”, Microscopy and Microanalysis, Aug 7-11, 2011, Nashville, TN.

28. A. Matulionis, X. Li, S. Okur, F. Zhang, V. Avrutin, S. J. Liu, Ü. Özgür, H. Morkoç, S. M. Hong, and S. H. Yen, “Effects of hot electronic and active layer design on the quantum efficiency of InGaN LEDs”, Advanced Optical Materials and Devices (AOMD-7), Aug 28-31, 2011, Vilnius, Lithuania.

29. J. Christen, S. Metzner, F. Bertram, C. Karbaum, S.J. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Cathodoluminescence Microscopy of polarization-reduced GaN directly grown on patterned Si substrate”, 9th International Conference on Nitride Semiconductors (ICNS) Glasgow, UK, July 10-15, 2011.

30. C. Karbaum, F. Bertram, S. Metzner, J. Christen, X. Ni, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, “Spatially resolved cathodoluminescence spectroscopy of InGaN/GaN heterostructures on m-plane GaN grown on patterned Si (112) substrates”, German Physical Society (DPG) Meeting, Mar 13-18, 2011, Dresden, Germany.

31. Ü. Özgür, X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, and H. Morkoç, “Carrier transport and efficiency retention in InGaN light emitting diodes at high injection levels”, 6th International Nanoscience and Nanotechnology Conference, June 15-18 2010, Izmir, Turkey. (invited)

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32. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, “Carrier dynamics and the efficiency in InGaN light emitting diodes at high injection levels”, The 8th International symposium on semiconductor light emitting devices (ISSLED) Beijing, China, May 16-21, 2010.

33. B. Xiao, V. Avrutin, H. Liu, Ü. Özgür, L. Zhou, D. J. Smith, and H. Morkoç, “Ferroelectric properties of Pb(Zr,Ti)O3 thin films on GaN/c-sapphire and STO:Nb substrates grown by rf magnetron sputtering”, Materials Research Society (MRS) Fall meeting, Dec 1–5, 2008.

34. X. Ni, Ü. Özgür, Y. Fu, N. Biyikli, H. Morkoç, and Z. Liliental-Weber, “Defect reduction in (11-20) a-plane GaN by two-step epitaxial lateral overgrowth”, Mater. Res. Soc. (MRS) Fall Meeting, Nov 27 – Dec 1, 2006.

35. Y. Fu, X. Ni, N. Biyikli, J. Xie, Ü. Özgür, H. Morkoç, W. J. Choyke, C. K. Inoki, T. S. Kuan, “Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy”, Materials Research Society (MRS) Fall Meeting, Nov 27 – Dec 1, 2006.

36. V. Avrutin, Ü. Özgür, N. Izyumskaya, S. Chevtchenko, J. Leach, J.C. Moore, A.A. Baski, H.O. Everitt, K.T. Tsen, M. Abouzaid, P. Ruterana, and H. Morkoç, “Morphology and optical properties of ZnO nanorods grown by catalyst-assisted vapor transport on various substrates”, Materials Research Society (MRS) Fall Meeting, Nov 27 – Dec 1, 2006.

37. Ç. Kurdak, N. Biyikli, Ü. Özgür, H. Morkoç, and V. Litvinov, “Spin-orbit Coupling and Zero-field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-dimensional Electron Gas”, Materials Research Society (MRS) Fall Meeting, Nov 27 – Dec 1, 2006.

38. N. Biyikli, Ç. Kurdak, Ü. Özgür, X. F. Ni, Y. Fu, and H. Morkoç, “Persistent Photoconductivity in High-mobility AlxGa1-xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy”, Materials Research Society (MRS) Fall Meeting, Nov 27 – Dec 1, 2006.

39. S. Chevtchenko, J. C. Moore, Ü. Özgür, X. Gu, A. A. Baski, and H. Morkoç, “Surface and optical properties of Zn-face versus O-face ZnO”, Am. Vac. Soc. (AVS) Annual Symp., San Francisco, CA, Nov 12-16, 2006.

40. V. Avrutin, Ü. Özgür, N. Izyumskaya, S. Chevtchenko, J. Leach, C. W. Litton, H.O. Everitt, K.T. Tsen, P. Ruterana, and H. Morkoç, “Carrier and lattice dynamics in ZnO nanorods grown by catalyst-assisted vapor transport”, The 4th Int. Workshop on ZnO and Related Materials, Giessen, Germany, Oct 3-6, 2006.

41. J. Foreman, H. O. Everitt, Ü. Özgür, C. Liu, S.–J. Cho, and H. Morkoç, “Ultrafast carrier relaxation in bulk and epitaxial ZnO”, Workshop on Global Perspectives in Frontiers of Photonics, Duke University, Durham, NC, May 18-20, 2005.

42. Ya. I. Alivov, S. Doğan, C. Liu, Y. Moon, Ü. Özgür, X. Gu, Y. Zhang, and H. Morkoç, “Growth of p-GaN/n-ZnO/n-GaN double heterostructures”, The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct 5-8, 2004.

43. Ya. I. Alivov, Ü. Özgür, S Doğan, C. Liu, V. Avrutin, N. Onojima, and H. Morkoç, “Properties of p-SiC/n-ZnO Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy”, The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct 5-8, 2004.

44. Ü. Özgür, C. Liu, S. –J. Cho, H. Morkoç, J. Foreman, and H. O. Everitt, “Ultrafast Carrier Relaxation in Bulk and Epitaxial ZnO”, Frontiers in Optics/Laser Science XX, Rochester, NY, Oct 10-14, 2004.

45. Ü. Özgür, L. He, H. Morkoç, S. Choi, and H. O. Everitt, “Stimulated Emission and Ultrafast Carrier Relaxation in AlGaN Multiple Quantum Wells”, Optical Society of America (OSA) Annual Meeting, Tucson, AZ, Oct 5-9, 2003.

46. Ü. Özgür, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, “Stimulated Emission and Ultrafast Carrier Relaxation in InGaN Multiple Quantum Wells”, OSA Annual Meeting, Tucson, AZ, Oct 5-9, 2003.

47. A. Teke, Ü. Özgür, X. Gu, S. Doğan, S. –J. Cho, B. Nemeth, J. Nause, H. O. Everitt, D. K. Johnstone, and H. Morkoç, “Continuous-Wave and Time-Resolved Photoluminescence Measurements on Bulk ZnO Substrates”, 8th Wide-Bandgap III-Nitride Workshop, Richmond, VA, Sep 29 - Oct 1, 2003.

48. C. Liu, A. Teke, Ü. Özgür, and H. Morkoç, “RF sputtering deposition of high quality ZnO thin films”, 8th Wide-Bandgap III-Nitride Workshop, Richmond, VA, Sep 29 - Oct 1, 2003.

49. Ü. Özgür, C. -W. Lee, A. Neogi and H. O. Everitt, "Coherent Acoustic Phonons in InGaN Multiple Quantum Wells", Conf. on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS), Long Beach, CA, May 19-24, 2002. Technical Digest (IEEE Cat. No.02CH37338), Part 1, vol.1, 2002, pp.218.

50. Ü. Özgür and H. O. Everitt, "Generation and Transport Properties of Acoustic Phonons in InGaN Multiple Quantum Wells", American Physical Society Annual Meeting, Indianapolis, IN, Mar 18-22, 2002.

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51. Ü. Özgür, C. -W. Lee, and H. O. Everitt, "Generation and Control of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells", Tenth International Conference on Phonon Scattering in Condensed Matter, Phonons 2001, Dartmouth College, Hanover, NH, Aug12-17, 2001. (presenter)

52. Ü. Özgür, C. -W. Lee, and H. O. Everitt, "Generation of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells", The 4th Int. Conf. on Nitride Semiconductors (ICNS-4), Denver, CO, July 16-20, 2001.

53. G. Webb-Wood, Ü. Özgür, H. O. Everitt, F. Yun, T. King, and H. Morkoç, "Ordinary and Extraordinary Refractive Indices of AlGaN Films", The 4th Int. Conf. on Nitride Semiconductors (ICNS-4), Denver, CO, July 16-20, 2001.

54. H. O. Everitt, Ü. Özgür, C. -W. Lee, H. C. Casey, Jr., M. J. Bergmann, A. Abare, S. Keller, S. P. DenBaars, and J. F. Muth, "Measurement of Fundamental Parameters and Control of Coherent Phenomena in Bulk and Multiple Quantum Well III-Nitride Materials", 22nd Army Science Conf., Baltimore, MD, Dec 11-13, 2000.

55. Ü. Özgür, M. J. Bergmann, and H. O. Everitt "Sub-picosecond generation and coherent control of acoustic phonons in InGaN multiple quantum wells", 16th Interdisciplinary Laser Science (ILS-XVI) Meeting (Optical Society of America), Providence, RI, Oct 22-26, 2000.

56. M. J. Bergmann, Ü. Özgür, H. C. Casey, Jr., and H. O. Everitt, "Ultrafast optical measurements on InGaN multiple quantum wells", American Physical Society (APS) Annual Meeting, Minneapolis, MN, Mar 20-24, 2000. (presenter)

57. Ü. Özgür, M. J. Bergmann, H. C. Casey, Jr., H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars "Sub-picosecond optical measurement of carrier relaxation in InGaN multiple quantum wells", The 6th Annual Wide Bandgap III-Nitride Workshop, Richmond, VA, Mar 12-15, 2000.

58. Ü. Özgür, M. J. Bergmann, H. C. Casey, Jr., and H. O. Everitt, "Refractive Indices determined by waveguide measurements for Epitaxial AlxGa1-xN films with x=0.0, 0.04, 0.07, 0.10, 0.20", The 6th Annual Wide Bandgap III-Nitride Workshop, Richmond, VA, Mar 12-15, 2000. (presenter)

59. Ü. Özgür, M. J. Bergmann, H. O. Everitt, and H. C. Casey, Jr., "Sub-picosecond optical measurements of carrier relaxation in InGaN multiple quantum wells", Southeastern Section of the American Physical Society (SESAPS) Annual Meeting, Chapel Hill, NC, Nov 7-9,1999. (presenter)

60. Ü. Özgür, M. J. Bergmann, H. O. Everitt, and J. F. Muth, "Refractive indices obtained by waveguide measurements of epitaxial AlxGa1-xN films with x=0.0, 0.04, 0.08, 0.11, 0.20", American Physical Society (APS) Annual Meeting, Atlanta, GA, Mar 20-26,1999.

Invited Talks and Seminars

“LEDs for lighting: Current Status, Challenges, and Opportunities”, VCU Engineering Graduate Student Association Breakfast Club seminar series, Mar.23, 2018

“Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices”, SPIE Photonics West, “Oxide-based Materials & Devices VIII”, San Francisco, CA, Jan.30, 2017.

“III-Nitride LEDs for lighting: Opportunities and Challenges”, Physics Department Colloquium, Bilkent University, Ankara, Turkey, Sep.16, 2015.

“Lighting with Light Emitting Diodes: Carrier Transport and efficiency retention in InGaN light emitting diodes at high injection”, Japan Women’s University, Tokyo, Japan, Dec.24, 2010.

“Carrier transport and efficiency retention in InGaN light emitting diodes at high injection levels”, 6th International Nanoscience and Nanotechnology Conference NanoTR 2010, June 15-18 2010, Izmir, Turkey.

“Lighting with Light Emitting Diodes”, IEEE Richmond Section Meeting, Richmond, VA, Mar.4, 2010.

“Ultrafast Spectroscopy and Vertical Cavity Surface Emitting Laser Applications of Nitride Semiconductor Heterostructures”, Department of Electrical and Computer Engineering, VCU, Richmond, VA, Jan.29, 2008.

“Coherent Phonons and Spin Injection in Wide Bandgap Semiconductors”, Physics Department Colloquium, VCU, Richmond, VA, Feb.21, 2007.

“Ultrafast Spectroscopy of Semiconductor Heterostructures”, Physics Department Colloquium, VCU,

Richmond, VA, Mar.25, 2005.

“Ultrafast Carrier Relaxation in Group III-Nitride Multiple Quantum Wells”, SPIE Photonics West, “Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII”, San Jose, CA, Jan 26-29, 2004.

“Ultrafast Spectroscopy of group III-Nitride Semiconductor Heterostructures”, Electrical Engineering Department, Northwestern University, Evanston, IL, May 2003.

Ümit Özgür, PhD

21

Research highlights in trade journals and news websites

“Zinc Oxide-based field effect transistors get performance boost from clever engineering”, Scilight 2017,

DOI: 10.1063/1.5010889

“Shedding Light On The Mystery Of LED Droop”, Compound Semiconductor, 03/02/2010

https://www.compoundsemiconductor.net/article/85892-shedding-light-on-the-mystery-of-led-droop.html

“The LED’s dark secret”, IEEE Spectrum cover story, August 2009

http://spectrum.ieee.org/semiconductors/optoelectronics/the-leds-dark-secret/0

Emerging Research Fronts, ZnO Materials and Devices, ScienceWatch.com, Clarivate Analytics, June 2009

http://archive.sciencewatch.com/dr/erf/2009/09junerf/09junerfOzgu/

“InGaN LED spillover and efficiency droop”, Semiconductor Today, 12/01/2009

http://www.semiconductor-today.com/news_items/2009/DEC/VCU_011209.htm

“Shedding some light on the origin of light efficiency droop: Findings may one day lead to more energy-efficient, brighter lighting for indoors and outdoors”, VCU View, 10/20/2008

http://www.news.vcu.edu/vcu_view/pages.aspx?nid=2675

“Fathoming efficiency droop in InGaN MQW-LEDs”, Semiconductor Today, 10/02/2008

http://www.semiconductor-today.com/news_items/2008/OCT/VIRGINIA_021008.htm

“Doped InGaN barriers attack LED droop: US researchers are combating high-current LED efficiency loss with magnesium-doped InGaN barriers in the active region”, Compound Semiconductor, 09/15/2008

https://www.compoundsemiconductor.net/article/85104-doped-ingan-barriers-attack-led-droop.html

“Control of Coherent Acoustic Phonons”, Ü. Özgür, C. -W. Lee, and H. O. Everitt, Optics & Photonics News 12, 66 (2001). https://www.osapublishing.org/opn/abstract.cfm?uri=opn-12-12-66

Current and completed sponsored projects (PI/co-PI)

“Overcoming plasmonic loss to realize high-performance telecommunications devices”, NSF, 08/2018 – 07/2021

“SusChEM: Synthesis and Structure-Property Elucidation of Direct-gap Group IV Alloy Nanocrystals for Optoelectronic Applications”, NSF, 06/2015 – 05/2019

“Extreme pixel scale narrow bandpass filters for real-time explosive detection”, DoD / Night vision Laboratories, 07/2016 – 06/2019

“ZnO nanowire sensor arrays integrated with electrically rupturable membranes”, Virginia Microelectronic Consortium (VMEC), 03/2017 – 06/2018

“Implantable Biosensors for Long-Term Continuous Glucose Monitoring”, Commonwealth Health Research Board (CHRB), 07/2016 – 06/2018

“Oxide Electronics: Fundamentals and Technology”, AFOSR, 08/2012 – 07/2017

“Materials World Network: Investigation of nonpolar and semipolar GaN on Si and sapphire: optical processes and efficiency”, NSF, 09/2012 – 08/2016

“Electrically pumped microcavity polariton lasers on nonpolar m-plane and semipolar GaN”, NSF, 09/2011 – 08/2015

“Coherent acoustic phonon nanocavity devices for terahertz spectroscopy and structural and biomedical imaging at the nanoscale”, VCU Presidential Res. Quest Fund, 07/2013 – 12/2014

“SBIR - Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTs for Power Conversion Applications”, Kyma Technologies/ ONR, 05/2012 – 05/2013

“Growth and optical properties of Nonpolar m-plane GaN on patterned Si and sapphire substrates”, NSF, 09/2009 – 08/2012

“Functional Epitaxial Devices”, ONR, 07/2010 – 06/2012

“Efficiency Enhancement in GaN based LEDs”, Epistar Corp., Taiwan, 06/2010 – 05/2011

“Investigation of InGaN LED Efficiency and Methodologies Leading to Efficiency Retention at High Injection Levels”, Electronics & Telecomm. Res. Inst. (ETRI), Korea, 08/2010 – 01/2011

“High efficiency solar cells using multiple electron-hole pair generation per photon in epitaxial InAs Quantum Dots”, Southeastern Center for Electrical Eng. Ed. (SCEEE), 07/2009 – 06/2010

“GaN-based HEMT epitaxial wafers on semi-insulating bulk GaN substrates”, Kyma Technologies / DoD, 12/2009 – 12/2010