Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

OUTLINE DIMENSIONS

Unit : mm

Case : MTO-3P

HFX SeriesSwitching Power Transistor

3A NPN

2SC4235(T3W80HFX)

Absolute Maximum Ratings Item Symbol Conditions Ratings Unit

Storage Temperature Tstg -55～150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7 VCollector Current DC IC 3 A

Collector Current Peak ICP 6Base Current DC IB 1 A

Base Current Peak IBP 2

Total Transistor Dissipation PT Tc = 25 80 W

Mounting Torque TOR (Recommended torque : 0.5N･m) 0.8 N･m

Electrical Characteristics (Tc=25) Item Symbol Conditions Ratings Unit

Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 800 V

Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA

ICEO Max 0.1

Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA

DC Current Gain hFE VCE = 5V, IC = 1.5A Min 8

hFEL VCE = 5V, IC = 1mA Min 7

Collector to Emitter Saturation Voltage VCE(sat) IC = 1.5A Max 1.0 V

Base to Emitter Saturation Voltage VBE(sat) IB = 0.3A Max 1.5 VThermal Resistance θjc Junction to case Max 1.56 /WTransition Frequency fT VCE = 10V, IC = 0.3A TYP 8 MHzTurn on Time ton IC = 1.5A Max 0.5Storage Time ts IB1 = 0.3A, IB2 = 0.6A Max 3.5 μsFall Time tf RL = 170Ω, VBB2 = 4V Max 0.3

1

10

10

0

2S

C4235

0.0

01

0.0

10.1

1

0.0

50

.50

.22

05

05

22

00

50

02

00

05

00

0

VC

E =

5V

0.0

20.0

50.5

0.2

20

52

0.0

05

0.0

02

Tc

= 1

50

°C

10

0°C

50°

C

25°

C

0°C −2

5°C

−55°

C

hF

E -

I C

6

Colle

ctor

Curr

ent

IC [A

]

DC Current Gain hFE

0

0.51

1.52

2.53

2S

C4235

0.0

10.1

100.5

11.5

22.5

3

0.0

50

.50

.22

05

05

22

00

50

02

00

05

00

0

0.0

20.0

50.5

0.2

20

52

0.0

05

0.0

02

I C =

0.3

A0.7

5A

1.5

A3.0

A4.5

A

Tc

= 2

5°C

Satu

ratio

n V

olta

ge

I C =

0.3

A

0.7

5A

1.5

A3.0

A4.5

A

2

Base

Curr

ent

IB [A

]

Collector-Emitter Voltage VCE [V]

Base-Emitter Voltage VBE [V]

0.01

0.1

1

10

0 0.5 1 1.5 2 2.5 3

2SC4235

IB1 = 0.2ICIB2 = 0.4ICVBB2 = 4VVCC = 250VTc = 25°C

ts

ton

tf

Switching Time - IC

Collector Current IC [A]

Sw

itchin

g T

ime

t SW

[µ

s]

0.01

0.1

1

10

0 50 100 150 200 250 300

2SC4235

IC = 1.5AIB1 = 0.3AIB2 = 0.6AVBB2 = 4VTc = 25°C

ts

ton

tf

Switching Time - VCC

Collector Voltage VCC [V]

Sw

itchin

g T

ime

t SW

[µ

s]

0.01

0.1

1

10

0 50 100 150

2SC4235

IC = 1.5AIB1 = 0.3AIB2 = 0.6AVBB2 = 4VRL = 167Ω

ts

ton

tf

Switching Time - Tc

Case Temperature Tc [°C]

Sw

itchin

g T

ime

t SW

[µ

s]

0.01

0.1

1

10

0 0.5 1 1.5 2 2.5 3

2SC4235

IB1 = 0.2ICIB2 = 0.4ICVBB2 = 4VVCE (clamp) = 300VTc = 25°C

ts

tf + tvs

tf

L-Load Switching Time - ICS

witc

hin

g T

ime

t SW

[µ

s]

Collector Current IC [A]

0.01

0.1

1

10

0 0.5 1 1.5 2 2.5 3

2SC4235

IB1 = 0.2ICIB2 = 0.4ICVBB2 = 4VVCE (clamp) = 300VTc = 100°C

ts

tf + tvs

tf

L-Load Switching Time - IC (At High Temperature)S

witc

hin

g T

ime

t SW

[µ

s]

Collector Current IC [A]

Tra

nsie

nt T

herm

al I

mpe

danc

e

0.0

01

0.010.

11

10

2SC

4235

10-

41

0-3

10-

21

0-1

100

101

0.05

0.5

0.2

20

50

52

20

05

00

20

00

50

00

0.02

0.05

0.5

0.2

20

52

0.0

05

0.0

02

Tim

e t

[s

]

Transient Thermal Impedance θjc(t) [°C/W]

Forward Bias SOA

0.01

0.1

1

1 10 100

2SC4235

50µs

Tc = 25°CSingle Pulse

150µs1ms10ms

DC

6

800

Collector-Emitter Voltage VCE [V]

Col

lect

or C

urre

nt

I C [

A]

PT limit

IS/B limit

0

20

40

60

80

100

0 50 100 150

2SC4235 Collector Current DeratingC

olle

ctor

Curr

ent

Dera

ting

[%]

VCE = fixed

PT limit

IS/B limit

Case Temperature Tc [°C]

0

1

2

3

4

5

6

0 200 400 600 800 1000 1200

2SC4235

IB1 = 0.25ICIB2 = 0.45AVBB2 = 5VTc < 150°C

Reverse Bias SOA

Collector-Emitter Voltage VCE [V]

Colle

ctor

Curr

ent

IC [A

]