©2017 by System Plus Consulting | Panasonic PGA26E19BA 1
21 rue la Noue Bras de Fer44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr
Panasonic PGA26E19BA600V GaN HEMTPower Semiconductor report by Elena Barbarini Mai 2017 – sample
©2017 by System Plus Consulting | Panasonic PGA26E19BA 2
SUMMARY
Overview / Introduction 3
o Executive Summary
o Reverse Costing Methodology
Company Profile 8
o Panasonic
Physical Analysis 12
o Synthesis of the Physical Analysis
o Package analysis
Package opening
Package Cross-Section
o HEMT Die
HEMT Die View & Dimensions
HEMT Die Process
HEMT Die Cross-Section
HEMT Die Process Characteristic
HEMT Manufacturing Process 37
o HEMT Die Front-End Process
o HEMT Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 45
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o HEMT die
HEMT Front-End Cost
HEMT Die Probe Test, Thinning & Dicing
HEMT Wafer Cost
HEMT Die Cost
o Complete HEMT
Packaging Cost
Final Test Cost
Component Cost
Price Analysis 58
o Estimation of selling price
Comparison 61
o Comparison between Panasonic HEMTs
o Comparison between Panasonic, Transphorm and GaN Systems HEMT
Company services 67
©2017 by System Plus Consulting | Panasonic PGA26E19BA 3
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Executive Summary
This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling priceof the Panasonic PGA26E19BA 600V GaN HEMT.
The PGA26E19BA is the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decidedto abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaNtransistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with verylow on-resistance with respect to its competitors and the TO220 assembled component. The transistor is optimized to be usedin power supplies and AC-DC, photovoltaic and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy onto a silicon substrate. A complex buffer and template layer structure isused to reduce the stress and dislocation levels.
Based on a complete teardown analysis, the report provides an estimation of the production cost of the epitaxy, HEMT andpackage. Moreover, the report compares the new device with GaN Systems’ GS66504B and Transphorm’s GaN HEMT. Thiscomparison highlights the huge differences in design and manufacturing processes and their impact on device size andproduction cost.
©2017 by System Plus Consulting | Panasonic PGA26E19BA 4
Overview / Introduction
Company Profile & SupplyChain
o Panasonic Profileo Panasonic GaN Products
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Panasonic PGA26E19BA Datasheet
©2017 by System Plus Consulting | Panasonic PGA26E19BA 5
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Synthesis of the Physical Analysis
Package DFN 8x8:
o Dimensions: xxmm x xxmm xxxmm
o Number of Pins: 8-pin
HEMT:
o Dimension: xxxmm x xxxmm = xxxmm²
o Electrical Connection: xxxx wire bonding
o Placement in the package: xxxxx on copper leadframe.
Package
GaN HEMT
Package opening – Optical View
©2017 by System Plus Consulting | Panasonic PGA26E19BA 6
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package characteristics
o The package type is a DFN 8x8
o Package size : xxmm x xxmm x xxxxmm
o Pin pitch : xxmm
o The package markings include the following markings :
PGA26E19
630LPH20
Package Front view
Package Back viewPackage Side view
Reference of component
©2017 by System Plus Consulting | Panasonic PGA26E19BA 7
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package opening
Wire Bonding:
o xxx xxx wire.
o Diameter: xxxµm.
o Medium length: xxxmm
Package
GaN HEMT
Gate
Drain
Wire bonding
Source
Package Opening
©2017 by System Plus Consulting | Panasonic PGA26E19BA 8
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package Cross-Section #2
Package cross section – SEM View
©2017 by System Plus Consulting | Panasonic PGA26E19BA 9
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
xxxx
mm
HEMT die Dimensions
HEMT Die – Optical view
o Die dimensions:xxx mm² (xxxmm x xxxmm)
o There is no marking on the die.
xxxx mm
©2017 by System Plus Consulting | Panasonic PGA26E19BA 10
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die process
Transistor after delayering – SEM View
©2017 by System Plus Consulting | Panasonic PGA26E19BA 11
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section – SEM View
o Substrate thickness: xxxx µm
xxxx µm
©2017 by System Plus Consulting | Panasonic PGA26E19BA 12
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
©2017 by System Plus Consulting | Panasonic PGA26E19BA 13
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section – Gate & source
Die cross section – SEM View
o Source total dimensions: xxxx µm
©2017 by System Plus Consulting | Panasonic PGA26E19BA 14
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
©2017 by System Plus Consulting | Panasonic PGA26E19BA 15
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section - Epitaxy
Die cross section – SEM View
©2017 by System Plus Consulting | Panasonic PGA26E19BA 16
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo HEMT Fab Unito HEMT Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Description of the Wafer Fabrication Units - HEMT
In our calculation, we simulate a production unit using xxxxmm wafers.
HEMT wafer fab unit:
Name: xxxx
Wafer diameter: 4H SiC xxxxmm
Capacity: xxxx wafers / month
Year of start: xxxxx
Most advanced process: GaN, GaAs
Products: Power and Logic
Location: Japan
We assume a depreciation rate of xxxxx% for clean-room and equipment.
©2017 by System Plus Consulting | Panasonic PGA26E19BA 17
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo HEMT Fab Unito HEMT Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Epitaxy Structure Process Flow (1/2)
©2017 by System Plus Consulting | Panasonic PGA26E19BA 18
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo HEMT Fab Unito HEMT Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Structure Process Flow (3/4)
IMD2 and S/D
• IMD 2 deposition and pattern
• S/D deposition and pattern
Passivation
•Passivation
•Polyimide
Back side
•Backgrinding
•Back side metal
Drawing not to Scale
©2017 by System Plus Consulting | Panasonic PGA26E19BA 19
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
HEMT Front-End Cost
The front-end cost ranges from $xxx to $xxx according toyield variations.
The main part of the wafer cost is due to the xxxx (xxx%).The epitaxy steps represent a large part of consumableand equipment cost (see details in the following pages).
©2017 by System Plus Consulting | Panasonic PGA26E19BA 20
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
HEMT Wafer Cost per process steps
©2017 by System Plus Consulting | Panasonic PGA26E19BA 21
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
HEMT Die Cost
The HEMT Component cost ranges from $xxx to $xxxaccording to yield variations.
The xxxxx represents xxx% of the component cost(medium yield estimation).
Xxxxxx account for xxxxx% of the component cost.
©2017 by System Plus Consulting | Panasonic PGA26E19BA 22
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Component Cost
The component cost ranges from $xxx to $xxxx accordingto yield variations.
The HEMT xxxx represents xxx% of the component cost.
The xxxx represents xxxx % of the component cost.
Final test and yield losses account for 12% of thecomponent cost.
©2017 by System Plus Consulting | Panasonic PGA26E19BA 23
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Die Cost Evolution Estimation
We estimate a slow decrease inthe wafer and die cost.
Mainly due to the improvementof Yield in manufacturing line anddecrease of epitaxy cost.
©2017 by System Plus Consulting | Panasonic PGA26E19BA 24
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Estimated Manufacturer Price
The component manufacturing cost rangesfrom $xxx to $xxxx according to yieldvariations.
The component selling price ranges from $xxxto $xxxx according to yield variations.
©2017 by System Plus Consulting | Panasonic PGA26E19BA 25
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparisono Panasonic 600V GaN
HEMTo Transphorm, GaN System
and Panasonic 600V GaNHEMT
About System Plus
Comparison between Panasonic PGA26E19BA & PGA26C09DV
PGA26E19BA
PGA26C09DV
©2017 by System Plus Consulting | Panasonic PGA26E19BA 26
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparisono Panasonic 600V GaN
HEMTo Transphorm, GaN System
and Panasonic 600V GaNHEMT
About System Plus
Comparison between Transphorm, GaN System and Panasonic HEMT
©2017 by System Plus Consulting | Panasonic PGA26E19BA 27
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
Power Semiconductors & Compound• Transphorm GaN-on-Silicon HEMT TPH3206PS• Efficient Power Conversion EPC2040 15V eGaN FET for
LiDAR Systems • GaN Systems GaNpx Top Cooled – AT&S ECP® Embedded
Power Die Package• Transphorm TPH3002PS 600V GaN on Silicon HEMT• GaN Systems – 650V GaN on Silicon HEMT AT&S ECP®
Embedded Power Die Package• EPC2010 GaN 200V power transistor• Infineon – IPB60R280C6 600V CoolMOS C6 MOSFET• Toshiba TK31E60W 4thgen DTMOS 600V Super-Junction
MOSFET
Related Reports
MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT
• Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends
©2017 by System Plus Consulting | Panasonic PGA26E19BA 28
COMPANYSERVICES
©2017 by System Plus Consulting | Panasonic PGA26E19BA 29
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
Business Models Fields of Expertise
Custom Analyses(>130 analyses per year)
Reports(>40 reports per year)
Costing Tools
Trainings
©2017 by System Plus Consulting | Panasonic PGA26E19BA 30
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
Contact
Headquarters21 rue La Noue Bras de Fer44200 NantesFRANCE+33 2 40 18 09 [email protected]
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America Sales OfficeSteve [email protected]
www.systemplus.fr
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NANTESHeadquarter
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