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Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

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Parallel High Throughput WLR Testing for Advanced Gate Dielectrics. P. Meyer. Agenda. Summary of new test challenges Large sample size Highly dynamic degradation mechanisms Conventional system and NBTI Conventional system and TDDB New concept Improved NBTI testing Improved TDDB testing - PowerPoint PPT Presentation
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A G R E A T E R M E A S U R E O F C O N F I D E N C E www.keithley.com K E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y © Copyright 2004 Keithley Instruments, Inc. Parallel High Throughput WLR Testing for Advanced Gate Dielectrics P. Meyer
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Page 1: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

P. Meyer

Page 2: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Agenda

• Summary of new test challenges– Large sample size

– Highly dynamic degradation mechanisms

• Conventional system and NBTI• Conventional system and TDDB• New concept

– Improved NBTI testing

– Improved TDDB testing

– How it works

• Hybrid architecture• S510 and automated WLR test

Page 3: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Reliability test challenges

• Higher throughput required– Need larger sample size for testing thinner oxide

• Minimizes error in Weibull distribution for thin oxide reliability test• Determines cross wafer variation due to increasing wafer size

– Due to the nature of reliability tests, parallel test is a must for statistical analysis and lifetime prediction

• New reliability issues = New test requirements– Minimize stress measure delay in NBTI test due to

degradation recovery when stress is off

Page 4: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Increasing sampling size for thin oxide

• For thinner gate oxide, decreases, representing increasing randomness in device failure

• Statistical error increases with the same sample size for thinner oxide– Increase in sample size to

maintain statistical error

Rolf-Peter Vollertsen IRPS 2004 Tutorial

Page 5: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

New test challenge: NBTI - Degradation Relaxation

• Device degradation may recover when stress is turned off

• Relaxation depends on temperature

• Device may reach 100% recovery at room temperature

• Degradation resumes after stress is reapplied

S. Rangan et al, IEDM 2003

Stress time (log)

1st stress

2nd Stress

% I

d d

egra

dat

ion

Stress OffRelaxation

Page 6: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Time Dependent Relaxation

Page 7: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

What tests do you run?

HCI/CHC TDDB EM NBTI/PBTI QBD BTS

Submit Clear

Page 8: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Agenda

• Summary of new test challenges– Large sample size

– Highly dynamic degradation mechanisms

• Conventional system and NBTI• Conventional system and TDDB• New concept

– Improved NBTI testing

– Improved TDDB testing

– How it works

• Hybrid architecture• S510 and automated WLR test

Page 9: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Conventional setup – stress, switch, and measure

WAFER

Switch Matrix

SMU1

Probe Card InterfaceProbeCard

SMU3

SMU2

SMUn

Page 10: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Shared Stress SMU

SMU n

Page 11: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

NBTI: The problem

stress

IV sweep

switch matrix Connection,

SMU assignment

stressswitch matrix Connection,

SMU assignment

Device relaxation

Minimize the device relaxation time

Page 12: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Drawbacks of Conventional WLR Solutions

• Sequential device measuring

• Uncontrolled relaxation time: variable from device to device

• Test one structure at a time for meaningful NBTI measurement resultsTiming diagram for conventional WLR

multiplexed SMU solution performing NBTI

Switch SMU

2

Page 13: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Agenda

• Summary of new test challenges– Large sample size

– Highly dynamic degradation mechanisms

• Conventional system and NBTI• Conventional system and TDDB• New concept

– Improved NBTI testing

– Improved TDDB testing

– How it works

• Hybrid architecture• S510 and automated WLR test

Page 14: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

TDDB: Configuration 1

• Drawback– Voltage disruption during device breakdown

SM

U 1

SM

U 2

...

Page 15: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

TDDB – Modified configuration 1

• Adding series resistors to eliminate stress voltage disturbance when one device breaks down

• Drawbacks – Effect of size of resistor on oxide breakdown to be examined– Time resolution depends on number of devices in parallel– Number of different stress conditions is limited to number of SMUs in system

SM

U 1

SM

U 2

...

Page 16: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

TDDB: Configuration 2

• Advantages– Simple setup, easy to

implement

– Good time to breakdown accuracy

– Independent device control

• Drawback– Number of devices in

parallel is limited by cost, rack space, and instrumentation

SM

U 1

SM

U n

SM

U 4

SM

U 3

SM

U 2

...

...

Page 17: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Conventional WLR Solution Fails to Monitor Leakage Current During Stress

Switch SMU

• Sequential device measuring

• Cannot continuously monitor devices during stress

• Misses soft breakdown events

• All devices must be placed under same stress conditionsTiming diagram for conventional WLR

multiplexed SMU solution performing TDDB

Initial MeasureInterval (pre-

characterization)

Final MeasureInterval (post-

characterization)

StressInterval

Vg-Ig

0 V

Vstress

Vgate 1

TimeMeasure Stress (infrequent readings)

Vg-Ig

0 V

Vstress

Vgate 2

VgatenVg-Ig

0 V

Vstress

Sw

itch

Sw

itch

Sw

itch

Sw

itch

Sw

itch

Sw

itch

Page 18: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

What node is currently in technology development at your company?

Larger than 130nm 130nm 90nm 65nm

Submit Clear

Page 19: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Agenda

• Summary of new test challenges– Large sample size

– Highly dynamic degradation mechanisms

• Conventional system and NBTI• Conventional system and TDDB• New concept

– Improved NBTI testing

– Improved TDDB testing

– How it works

• Hybrid architecture• S510 and automated WLR test

Page 20: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

New Reliability Test Concept:SMU-per-Device

• Source-measure unit (SMU) per device provides:

• Device-independent stress conditions

• Precision measurement capability

• Simultaneous measurement

Page 21: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Parallel SMU-per-Device Solution Controls Relaxation and Monitors During Stress

• Seamless transition between stress and measure cycles

• No uncontrolled relaxation time

• Continuous and independent device monitoring during stress

• Precise stress timing maximizes reliability modeling

Timing diagram for new SMU-per-device (pin) architecture performing NBTI

A

A

A

A

A

A

VST1 Measure Measure

VST2 Measure Measure

VSTN Measure Measure

Stress(with readings)

Stress(with readings)

Stress(with readings)

Vol

tage

app

lied

to D

UT

pin

TSTNa

TST2a

TST1a

Time

TST1b

TST2b

TSTNb

Stress(with readings)

Stress(with readings)

Stress(with readings)

Measure Stress (with readings)

Vgate1

Vgate2

VgateN

Page 22: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Parallel SMU-per-device Solution Provides Independent Stress and Continuous Measurements During Stress

• Continuous measurements for maximum visibility into device failure

• Soft breakdown noise not compounded by devices SMU sharing

• Soft breakdown events always captured

• Independent stress conditions for every device

Timing diagram for new SMU-per-device (pin) architecture performing TDDB

DUTVstress

AIleak

DUTVstress

AIleak

DUTVstress

AIleak

Initial MeasureInterval (pre-

characterization)

Final MeasureInterval (post-

characterization)

Vg-Ig

0 V

StressInterval

Vstress

TimeMeasure Stress (with monitor)

Vgate1

Vg-Ig

0 V

Vstress

Vgate2

Vg-Ig

0 V

Vstress

VgateN

Page 23: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

High Speed Parallel SMU Architecture

Page 24: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Agenda

• Summary of new test challenges– Large sample size

– Highly dynamic degradation mechanisms

• Conventional system and NBTI• Conventional system and TDDB• New concept

– Improved NBTI testing

– Improved TDDB testing

– How it works

• Hybrid architecture• S510 and automated WLR test

Page 25: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Combining High Speed Parallel with High Resolution SMUs

Page 26: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

High Resolution and High Speed Parallel

Page 27: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

What kind of reliability testing do you do now?

One structure/device at a time (serial) More than one structure/device at a time

(parallel) All structures in a site (parallel) Multi site (massively parallel)

Submit Clear

Page 28: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Agenda

• Summary of new test challenges– Large sample size

– Highly dynamic degradation mechanisms

• Conventional system and NBTI• Conventional system and TDDB• New concept

– Improved NBTI testing

– Improved TDDB testing

– How it works

• Hybrid architecture• S510 and automated WLR test

Page 29: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

A new system…

• 4200-SCS - high resolution SMUs

• 4500-MTS - high speed parallel SMUs

• 707A - switch control• 7174A – low leakage switch

matrix• 7136 – bypass switch

Page 30: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

a

www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

S510 Software Capability

• KTE for automation– Complex sample plans– Standard output file format– Handles large quantities of data– Automatic wafer prober drivers

• Eases parallel test setup • Provides real time

NBTI/TDDB test monitoring• Provides either interactive

GUI or fully automatic operation

Page 31: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

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www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

High Throughput and Flexibility for Wafer-Level Reliability Testing

• Dig out from ultra thin gate dielectric modeling backlog

• Accelerate reliability modeling with high throughput parallel automated testing

• Optimized for 65nm gate dielectric NBTI and TDDB reliability testing

• Scalable: Starting at 20 parallel source/measure channels

• Independent stress/measure channel for each structure

Page 32: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

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www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

S510 is the Latest in a Continuum ofScalable WLR Solutions

Page 33: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

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www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

Extending into the Fab with the S680

Page 34: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

A G R E A T E R M E A S U R E O F C O N F I D E N C E

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www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

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Page 35: Parallel High Throughput WLR Testing for Advanced Gate Dielectrics

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www.keithley.comK E I T H L E Y C O N F I D E N T I A L – P R O P R I E T A R Y

© Copyright 2004 Keithley Instruments, Inc.

A Greater Measureof Confidence


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