Passivated implanted Planar Silicon detectors

GSI Darmstadt – 16 April 2004

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Overview

The Areva group and Canberra Semiconductor

Manufacturing of PIPS detectorsCleanroom process

From start to end

Standard detectors

SMEPS

Custom design detectors

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Creation of AREVA :…a new industrial group, 2 activities

NUCLEAR ENERGYNUCLEAR ENERGY

FRAMATOMEANP

FRAMATOMEANP COGEMACOGEMA FCIFCI STMicro.

(Via holdings)STMicro.

(Via holdings)

100%66%34% 100%

COMPONENTSCOMPONENTS

11%

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Canberra Semiconductor

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Processing of the PIPS Detectors

Active areaØ 90 or Ø 115mm

Ø 4" or 5"

Thickness (150), (200), 300, 500, 700, (1000), (1500)

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Processing of the PIPS Detectors

Start with a clean wafer (N-type)oxidation

Implantation with Boronand Phosphorus

Etching of the Oxide

Contact with Aluminium

Passivat ion

Photo-resist and masking

annealing

Front and backside

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PIPS Production

Simulations Implantation profile Potential distribution Field distribution

Mask Development

Design at Canberra Manufacturing by a specialised company.

Production 4” wafers 150 to 1500um – Active area 60*60mm² 5” wafers 200 to 700um – Active area 80*80mm²

Packaging Standard or special, space qualified

Testing Noise, Leakage current, Capacitance, Resisitvity, Material lifetime, Long term stability

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Standard production

Partially and Fully depleted detectorsTiming – Annular detectors

Continuous Air Monitoring detectorsspecial mounts – OEM

Active area range: 25 mm² to 5000 mm²Main areas: 300 – 450 – 1700 – 2000 mm²

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SMEPS SMEPS (Single and multi(Single and multi--element detectors)element detectors)

• Rectangular detectors (series RF)

• Pad detectors (series PF/CD or PF/CT),

• Position detectors (series PF/RT) 1D or 2D

•Double sided detectors (series PF/CD/CD)

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Examples of SMEP Detectors

»Model PF-50X50

»Model PF-16RT-35*80

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Custom Design Detectors

Single junction, Pad and Segment detectorsLarge area 80*80mm² or ¢ 115Thickness from 200 to 1500µm

Pixel detectorsdirect connection to electronics with bumping

strip detectorsPitch down to 25 µm

Drift chamberUp to 80*70mm²very good linearityvoltage divider on chip

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Examples of CD Detectors

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Double Sided Strip Detectors

Ohmic side

Junction side

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Pixel Detector for X-Ray Experimenteach pixel 25 mm2 – thickness 1.5 mm

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Thick Detectors for X-Ray ExperimentAnnular 300mm2 – thickness 1.5 mm

Largest drift detector in the worldActive area: 52 cm2Anode pitch: 294µm512 anodes on two rowsPosition resolution: <50µmMOS injectors for calibration

Drift Detector for Alice in CERN

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Principle of the drift detector

drift stripson anode side

anodes

resistors on chip

drift strips onopposite sideelectrons

holes

Fig. 6 - Cross section of a silicon drift detector

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End

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