Passivation at the interface between liquid-phase crystallized silicon and silicon
oxynitride in thin film solar cells
• Helmholtz-Zentrum Berlin für Materialien und Energie
Dr. Jan Amaru Palomino Töfflinger,
• Sección Física, Pontificia Universidad Católica del Perú
Natalie Preissler, Dr. Onno Gabriel, Dr. Daniel Amkreutz, Dr. Bernd Stannowski, Dr. Rutger Schlatmann, Dr. Bernd Rech.
200 400 600 800 1000
Wavelength [nm]
Yb3+2F5/2 2F7/2
Sm3+4G5/2 6H7/2
4G5/2 6H9/2
CL
In
tensitie
s [
a.u
.]
Eu3+5D0 7F1,2
Tb3+5D4 7F5
Tm3+1G4 3H61D2 3H4
Dy3+
4F9/2 6H13/2
Grupo de Materiales (Sección Física, PUCP)
Publicaciones 2016 en revistas indexadas
N. Preissler, J. A. Töfflinger, et al., Progress in Photovoltaics, accepted (2016)
J. A. Guerra, et al., J. Phys. D: Appl. Phys. 49, 375104. (2016)
N. Preissler, J. A. Töfflinger, et al., Phys. Status Solidi A 213 (7), 1697 (2016)
J. A. Guerra, et al., J. Phys. D: Appl. Phys. 49, 195102. (2016)
Proyectos en ejecución
J. A. Guerra (PUCP-HZB), Proyecto de movilidad DAAD-Concytec
R. Weingärtner (PUCP-Ilmenau), Proyecto de movilidad DAAD-Concytec
J. A. Töfflinger (PUCP), Innóvate Perú, Repatriación, 274-PNICP-BRI-2015
Líneas de investigación
Semiconductores con tierras raras para celdas solares y dispositivos luminiscentes
Materiales de pasivación en celdas solares de silicio
Caracterización de a-SiC:H para la producción foto-electroquímica de hidrogeno
Roland Weingärtner Amaru Töfflinger Andrés Guerra
TEM SiC:H
a-Si
(10 – 20 µm)
IL
(≈ 200 nm)
glass
(1 – 3 mm)
LPC-Si
line-shaped laser or e-beam
liquid Si
Thin-film solar cell
Total: 18 3 Científicos/ PhD
3 Doctorandos
10 Maestrandos
1 Tesista Lic.
1 Assistente
Producción Caracterización Aplicación
Rare earth luminescence Magnetron sputtering
SiC:Tb3+
Other: AlN:H, SiN:H, ITO...
Optical properties
Structural properties
Electrical properties
In cooperation with
2
State of the art - commertial solar modules
3 ©Fraunhofer ISE: Photovoltaics Report, updated: 6 June 2016
4
Standard Crystalline Silicon solar panel
Source: McGehee, Energy Seminar 2014
?
ARC + Front passivation (standard SiNx)
+ (n+)
mc-Si (p)
(p++) Al-BSF
> 2
00
µm
1. Absorption of light and generation of charge carriers
3. Extract photo-voltage and -current -> electric power
2. Separation of charge carriers (p/n-junction: E-field)
1.
+ -
2. 3.
Solar cell efficiency η:
η
Standard mc-Si (p) Solar cell efficiency η ≈ 16%
The Photovoltaic effect
5
Trend in the silicon wafer based solar cells
RS contact
ARC
FS contact
> 2
00
µm
“Standard” solar cell
+ (n+)
c-Si (CZ, mc) (p)
(p++)Al
Emitter
Absorber
Key technology:
high level passivation!!!
η ≈ 16%
+ (n + )
c - Si (CZ, mc ) (p)
< 1
50
µm
Passivated Emitter and Rear Cell (PERC)
Passivation
stack
η > 18%
c-Si (CZ, mc) (p)
+
(
n+)
+
(
n+)
TCO
Si-Absorber
a-Si:H (i) a-Si:H (n)
TCO
a-Si:H (i) a-Si:H (p)
Heterojunction solar cell (HIT) η > 20%
6
+ (n + )
c - Si (CZ, mc ) (p)
c-Si
e.g.
a-SiN
Dit
Trend in the silicon wafer based solar cells
Passivated Emitter and Rear Cell (PERC)
η > 18%
Surface passivation =
Reduction of the recombination of photogenerated
charge carriers at surfaces
Main recombination parameters:
Interface defect state density Dit
Fixed charge density Qf
< 1
50
µm
+ -
+ -
+ -
+ Qf
Chemical passivation
Field-effect passivation 7
Trends in solar cell technology and research
8
40%
50%
20%
Efficiency
III/V Conc.
c-Si wafer
Thin film
Cost per area
Dye organics
https://educast.pucp.edu.pe/speaker/2864
1. Reduce c-Si cost: LPC-Si thin film
9
+ (n+)
mc-Si (p)
(p++) Al-BSF
~ 1
80
µm
Commercial solar cell Efficiency η = 15-16 %
2016: 90% market share for crystalline Si Silicon material: 30-40% of solar module cost
10
O. Gabriel et al., Prog. Photovolt: Res. Appl., doi: 10.1002/pip.2707 (2015) T. Frijnts, et. al., Solar Energy Materials & Solar Cells 143 457-466 (2015) S. Kühnapfel, et. al., Solar Energy Materials & Solar Cells 140 86-91 (2015)
Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%
Reduce c-Si cost: LPC-Si thin film
Reduce c-Si cost: LPC-Si thin film
11
laser-crystallization
Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%
O. Gabriel et al., Prog. Photovolt: Res. Appl., doi: 10.1002/pip.2707 (2015) T. Frijnts, et. al., Solar Energy Materials & Solar Cells 143 457-466 (2015) S. Kühnapfel, et. al., Solar Energy Materials & Solar Cells 140 86-91 (2015)
Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%
Reduce c-Si cost: LPC-Si thin film
12
laser-crystallization
LPC-Si a-Si
Voc = 640 mV
Jsc = 28 mA/cm2
FF = 74 % η = 13.2 %
O. Gabriel et al., Prog. Photovolt: Res. Appl., doi: 10.1002/pip.2707 (2015) T. Frijnts, et. al., Solar Energy Materials & Solar Cells 143 457-466 (2015) S. Kühnapfel, et. al., Solar Energy Materials & Solar Cells 140 86-91 (2015)
PUCP: Characterize electrical properties of LPC-Si/interlayer interface
LPC-Si thin film: Interface Passivation
13
S
I
M
Publications in colaboration HZB – PUCP: N. Preissler, J. A. Töfflinger, et al. (2016) Phys. Status Solidi A 213 (7), 1697 N. Preissler, J. A. Töfflinger, et al. (2016) Progress in Photovoltaics, accepted for publication
Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%
LPC-Si thin film: Interface Passivation
C-V samples
→ QIL,eff & Dit
solar cells
→ Voc & Jsc,EQE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Dit,M
G [1
012 e
V-1cm
-2]
n pp-doped LPC-Si n-doped LPC-Si
500
550
600
650
0.0 0.5 1.0 1.5 2.0 2.5
14
16
18V
oc [m
V]
Jsc,E
QE [m
A/c
m2]
Dit,MG
[eV-1cm
-2]
n-doped LPC-Si
p-doped LPC-Si
Simulations: Interface is well passivated by field-effect, bulk passivation dominates
Thermal treatments
Hatm30: H2 atmosphere, 30 min, 400°C
Hpla15: H2 plasma, 15 min, 400°C
Hpla30: H2 plasma, 30 min, 400°C
N. Preissler, J. A. Töfflinger, et al. (2016) Progress in Photovoltaics, accepted for publication
QIL,eff > 1012 cm-2 barely affected
LPC-Si thin film: Interface Passivation
C-V samples
→ QIL,eff & Dit
solar cells
→ Voc & Jsc,EQE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Dit,M
G [1
012 e
V-1cm
-2]
n p
500
550
600
650
0.0 0.5 1.0 1.5 2.0 2.5
14
16
18V
oc [m
V]
Jsc,E
QE [m
A/c
m2]
Dit,MG
[eV-1cm
-2]
Simulations: Interface is well passivated by field-effect, bulk passivation dominates
Thermal treatments
Hatm30: H2 atmosphere, 30 min, 400°C
Hpla15: H2 plasma, 15 min, 400°C
Hpla30: H2 plasma, 30 min, 400°C
QIL,eff > 1012 cm-2 barely affected
N. Preissler, J. A. Töfflinger, et al. (2016) Progress in Photovoltaics, accepted for publication
p-doped LPC-Si n-doped LPC-Si
n-doped LPC-Si
p-doped LPC-Si
Best research-cell efficiencies
16 http://www.nrel.gov/pv/
Best research-cell efficiencies
17
Emerging PV $ Unstable, mostly low efficiency KRICT (Perovskite) 20.1 %
Crystalline Si cells $$ Commercial use Panasonic (HIT) 25.6 % SunPower 25.0 %
Multijunction and GaAs cells $$$$ Space & concentrator applications Fraunhofer ISE / Soitec 46.0 %
Thin-Film cells $$ Commercial use ZSW (CIGS) 21.7 %
http://www.nrel.gov/pv/
More information about PV technologies
18
• DelftX: ET3034x Solar Energy https://www.edx.org/course/solar-energy-delftx-et3034x-0
• http://pveducation.org/pvcdrom
Materials Science group, Sección Física Roland Weingärtner, Andrés Guerra
PNICP contract No 274-PNICP-BRI-2015
Norbert Nickel, Walter Füssel, Bernd Stannowski, Ivo Rudolph
Acknowledgements
Passivation at the interface between liquid-phase crystallized silicon and silicon
oxynitride in thin film solar cells
• Helmholtz-Zentrum Berlin für Materialien und Energie
Dr. Jan Amaru Palomino Töfflinger,
• Sección Física, Pontificia Universidad Católica del Perú
Natalie Preissler, Dr. Onno Gabriel, Dr. Daniel Amkreutz, Dr. Bernd Stannowski, Dr. Rutger Schlatmann, Dr. Bernd Rech.
