Passivation at the interface between liquid-phase crystallized silicon and silicon

oxynitride in thin film solar cells

• Helmholtz-Zentrum Berlin für Materialien und Energie

Dr. Jan Amaru Palomino Töfflinger,

• Sección Física, Pontificia Universidad Católica del Perú

Natalie Preissler, Dr. Onno Gabriel, Dr. Daniel Amkreutz, Dr. Bernd Stannowski, Dr. Rutger Schlatmann, Dr. Bernd Rech.

200 400 600 800 1000

Wavelength [nm]

Yb3+2F5/2 2F7/2

Sm3+4G5/2 6H7/2

4G5/2 6H9/2

CL

In

tensitie

s [

a.u

.]

Eu3+5D0 7F1,2

Tb3+5D4 7F5

Tm3+1G4 3H61D2 3H4

Dy3+

4F9/2 6H13/2

Grupo de Materiales (Sección Física, PUCP)

Publicaciones 2016 en revistas indexadas

N. Preissler, J. A. Töfflinger, et al., Progress in Photovoltaics, accepted (2016)

J. A. Guerra, et al., J. Phys. D: Appl. Phys. 49, 375104. (2016)

N. Preissler, J. A. Töfflinger, et al., Phys. Status Solidi A 213 (7), 1697 (2016)

J. A. Guerra, et al., J. Phys. D: Appl. Phys. 49, 195102. (2016)

Proyectos en ejecución

J. A. Guerra (PUCP-HZB), Proyecto de movilidad DAAD-Concytec

R. Weingärtner (PUCP-Ilmenau), Proyecto de movilidad DAAD-Concytec

J. A. Töfflinger (PUCP), Innóvate Perú, Repatriación, 274-PNICP-BRI-2015

Líneas de investigación

Semiconductores con tierras raras para celdas solares y dispositivos luminiscentes

Materiales de pasivación en celdas solares de silicio

Caracterización de a-SiC:H para la producción foto-electroquímica de hidrogeno

Roland Weingärtner Amaru Töfflinger Andrés Guerra

TEM SiC:H

a-Si

(10 – 20 µm)

IL

(≈ 200 nm)

glass

(1 – 3 mm)

LPC-Si

line-shaped laser or e-beam

liquid Si

Thin-film solar cell

Total: 18 3 Científicos/ PhD

3 Doctorandos

10 Maestrandos

1 Tesista Lic.

1 Assistente

Producción Caracterización Aplicación

Rare earth luminescence Magnetron sputtering

SiC:Tb3+

Other: AlN:H, SiN:H, ITO...

Optical properties

Structural properties

Electrical properties

In cooperation with

2

State of the art - commertial solar modules

3 ©Fraunhofer ISE: Photovoltaics Report, updated: 6 June 2016

4

Standard Crystalline Silicon solar panel

Source: McGehee, Energy Seminar 2014

?

ARC + Front passivation (standard SiNx)

+ (n+)

mc-Si (p)

(p++) Al-BSF

> 2

00

µm

1. Absorption of light and generation of charge carriers

3. Extract photo-voltage and -current -> electric power

2. Separation of charge carriers (p/n-junction: E-field)

1.

+ -

2. 3.

Solar cell efficiency η:

η

Standard mc-Si (p) Solar cell efficiency η ≈ 16%

The Photovoltaic effect

5

Trend in the silicon wafer based solar cells

RS contact

ARC

FS contact

> 2

00

µm

“Standard” solar cell

+ (n+)

c-Si (CZ, mc) (p)

(p++)Al

Emitter

Absorber

Key technology:

high level passivation!!!

η ≈ 16%

+ (n + )

c - Si (CZ, mc ) (p)

< 1

50

µm

Passivated Emitter and Rear Cell (PERC)

Passivation

stack

η > 18%

c-Si (CZ, mc) (p)

+

(

n+)

+

(

n+)

TCO

Si-Absorber

a-Si:H (i) a-Si:H (n)

TCO

a-Si:H (i) a-Si:H (p)

Heterojunction solar cell (HIT) η > 20%

6

+ (n + )

c - Si (CZ, mc ) (p)

c-Si

e.g.

a-SiN

Dit

Trend in the silicon wafer based solar cells

Passivated Emitter and Rear Cell (PERC)

η > 18%

Surface passivation =

Reduction of the recombination of photogenerated

charge carriers at surfaces

Main recombination parameters:

Interface defect state density Dit

Fixed charge density Qf

< 1

50

µm

+ -

+ -

+ -

+ Qf

Chemical passivation

Field-effect passivation 7

Trends in solar cell technology and research

8

40%

50%

20%

Efficiency

III/V Conc.

c-Si wafer

Thin film

Cost per area

Dye organics

https://educast.pucp.edu.pe/speaker/2864

1. Reduce c-Si cost: LPC-Si thin film

9

+ (n+)

mc-Si (p)

(p++) Al-BSF

~ 1

80

µm

Commercial solar cell Efficiency η = 15-16 %

2016: 90% market share for crystalline Si Silicon material: 30-40% of solar module cost

10

O. Gabriel et al., Prog. Photovolt: Res. Appl., doi: 10.1002/pip.2707 (2015) T. Frijnts, et. al., Solar Energy Materials & Solar Cells 143 457-466 (2015) S. Kühnapfel, et. al., Solar Energy Materials & Solar Cells 140 86-91 (2015)

Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%

Reduce c-Si cost: LPC-Si thin film

Reduce c-Si cost: LPC-Si thin film

11

laser-crystallization

Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%

O. Gabriel et al., Prog. Photovolt: Res. Appl., doi: 10.1002/pip.2707 (2015) T. Frijnts, et. al., Solar Energy Materials & Solar Cells 143 457-466 (2015) S. Kühnapfel, et. al., Solar Energy Materials & Solar Cells 140 86-91 (2015)

Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%

Reduce c-Si cost: LPC-Si thin film

12

laser-crystallization

LPC-Si a-Si

Voc = 640 mV

Jsc = 28 mA/cm2

FF = 74 % η = 13.2 %

O. Gabriel et al., Prog. Photovolt: Res. Appl., doi: 10.1002/pip.2707 (2015) T. Frijnts, et. al., Solar Energy Materials & Solar Cells 143 457-466 (2015) S. Kühnapfel, et. al., Solar Energy Materials & Solar Cells 140 86-91 (2015)

PUCP: Characterize electrical properties of LPC-Si/interlayer interface

LPC-Si thin film: Interface Passivation

13

S

I

M

Publications in colaboration HZB – PUCP: N. Preissler, J. A. Töfflinger, et al. (2016) Phys. Status Solidi A 213 (7), 1697 N. Preissler, J. A. Töfflinger, et al. (2016) Progress in Photovoltaics, accepted for publication

Thin-film, liquid-phase-crystallized (LPC)-Si solar cells, Efficiency η = 13.2%

LPC-Si thin film: Interface Passivation

C-V samples

→ QIL,eff & Dit

solar cells

→ Voc & Jsc,EQE

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Dit,M

G [1

012 e

V-1cm

-2]

n pp-doped LPC-Si n-doped LPC-Si

500

550

600

650

0.0 0.5 1.0 1.5 2.0 2.5

14

16

18V

oc [m

V]

Jsc,E

QE [m

A/c

m2]

Dit,MG

[eV-1cm

-2]

n-doped LPC-Si

p-doped LPC-Si

Simulations: Interface is well passivated by field-effect, bulk passivation dominates

Thermal treatments

Hatm30: H2 atmosphere, 30 min, 400°C

Hpla15: H2 plasma, 15 min, 400°C

Hpla30: H2 plasma, 30 min, 400°C

N. Preissler, J. A. Töfflinger, et al. (2016) Progress in Photovoltaics, accepted for publication

QIL,eff > 1012 cm-2 barely affected

LPC-Si thin film: Interface Passivation

C-V samples

→ QIL,eff & Dit

solar cells

→ Voc & Jsc,EQE

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Dit,M

G [1

012 e

V-1cm

-2]

n p

500

550

600

650

0.0 0.5 1.0 1.5 2.0 2.5

14

16

18V

oc [m

V]

Jsc,E

QE [m

A/c

m2]

Dit,MG

[eV-1cm

-2]

Simulations: Interface is well passivated by field-effect, bulk passivation dominates

Thermal treatments

Hatm30: H2 atmosphere, 30 min, 400°C

Hpla15: H2 plasma, 15 min, 400°C

Hpla30: H2 plasma, 30 min, 400°C

QIL,eff > 1012 cm-2 barely affected

N. Preissler, J. A. Töfflinger, et al. (2016) Progress in Photovoltaics, accepted for publication

p-doped LPC-Si n-doped LPC-Si

n-doped LPC-Si

p-doped LPC-Si

Best research-cell efficiencies

16 http://www.nrel.gov/pv/

Best research-cell efficiencies

17

Emerging PV $ Unstable, mostly low efficiency KRICT (Perovskite) 20.1 %

Crystalline Si cells $$ Commercial use Panasonic (HIT) 25.6 % SunPower 25.0 %

Multijunction and GaAs cells $$$$ Space & concentrator applications Fraunhofer ISE / Soitec 46.0 %

Thin-Film cells $$ Commercial use ZSW (CIGS) 21.7 %

http://www.nrel.gov/pv/

More information about PV technologies

18

• DelftX: ET3034x Solar Energy https://www.edx.org/course/solar-energy-delftx-et3034x-0

• http://pveducation.org/pvcdrom

Materials Science group, Sección Física Roland Weingärtner, Andrés Guerra

PNICP contract No 274-PNICP-BRI-2015

Norbert Nickel, Walter Füssel, Bernd Stannowski, Ivo Rudolph

Acknowledgements

Passivation at the interface between liquid-phase crystallized silicon and silicon

oxynitride in thin film solar cells

• Helmholtz-Zentrum Berlin für Materialien und Energie

Dr. Jan Amaru Palomino Töfflinger,

• Sección Física, Pontificia Universidad Católica del Perú

Natalie Preissler, Dr. Onno Gabriel, Dr. Daniel Amkreutz, Dr. Bernd Stannowski, Dr. Rutger Schlatmann, Dr. Bernd Rech.