Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
1/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Description Based on GaN technology as an Intelligent Power Module configurated as Half Bridge. GaN transistors and gate drivers (Buffers) with temperature and current sensors are combined in a single package. The patented electrical design takes advantage of VisIC's innovative GaN technology. Power GaN transistors use an original, high-density lateral layout that results in exceptionally fast switching performance and low RDS(ON). It is very effective in applications requiring high frequency with high efficiency, simple integration and high power density.
Key features • Lowest switching loss
• Internal Buffers
• Internal NTC
• Internal current sensor
• Isolated base plate (2.5KV) with standard creepage and clearance distances
• Copper base plate
• Zero recovery time, GaN switch reverse conduction capability
• Robust operation in high EMI environment
• Very low thermal resistance based on AlN ceramic
• Compatibility to standard MOSFET external driver
(SI8228CB-D as an example)
Applications • 3 Phase PFC
• AC-DC Power Supply
• Motor drive
• Battery chargers
• UPS, Solar Inverters
• Industrial switch mode power supply
Single Switch Key Performance Parameters Pin Out
Parameter Value
VDS (V) 1,200
RDS(ON) (mΩ) 40
Eoff (J) 180
Coss (pf) 120
ID,pulse (A) 180
ID,cont (A) 80
Pin Function Pin Function
4K,5K,6K,7K HV BUS
RTN 10K,11K,12K,13K
HV BUS
16D +12v-HS 1G +12v-LS
16F GND-HS 1E GND-LS
7A,8A,9A,10A Midpoint 1C NTC1-LS
10E C.S HS 1B NTC2-LS
7F C.S LS 16G GATE-HS
16H NTC1-HS 1D GATE-LS
16J NTC2-HS
GaN
GaN
CAP
C.S.
C.S.
t
NTC-L
t
NTC-H
HV BUS RTN
HV BUS
NTC1-LS
NTC2-LS
C.S-LS
MID
NTC2-HS
C.S-HS
GND-LS
NTC1-HS
+12v-LS
GATE-LS
GATE-HS
GND-HS
+12v-HS
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
2/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
1) VDrv is relative to GND
2) Duty cycle =10% limited by Tj
Maximum ratings (Tj =25C unless otherwise specified)
Parameter Symbol Values
Unit Conditions Min Typical Max
Continuous drain current Each switch
ID - -
- -
80 58
A TC =25C
TC =100C
Pulsed drain current ID,pulse - - 180 A
Drive voltage 1) VDrv 12 - 0 V
Power dissipation each transistor PTOT - - 250 W
Operating and storage temperature
Tj, Tstg -55 - + 150 C
TC - - +110
Continuous reverse current Is - - 50 A
Reverse pulse current2) Is,pulse - - 140 A
Thermal characteristics
Parameter Symbol Values
Unit Conditions Min Typical Max
Thermal resistance, junction-case - Single switch
RθJC - - 0.45 C/W Top cooling via base plate
Thermal resistance, junction -ambient - Single switch
RθJA - - 25 C/W
Thermal soldering peak temperature
Tsold - - 260 C 4 mm from case for 10s
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
3/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
1) Each transistor 2) VGate to GND HS&LS, correspondently
Electrical characteristic (Tj =25C unless otherwise specified)1)
Parameter Symbol Values
Unit Conditions Min Typical Max
Static per single switch
Drain-source breakdown voltage VDS - - 1200 V VDrv= 0V
Threshold voltage2) Vth 5 - - V VDS= 15V, ID=1mA
Drain source leakage current IDSS - 300
µA
VDrv = 0V
VDS= 1200V, Tj =25C
- 700 VGatev= 0V, VDS= 1200
Tj =150C
Gate-source leakage current IGSS - 3 5 nA VDS= 0V VDrv = 12V
Drain-source on state resistance Each switch
RDS(ON)
- 40 44
mΩ
VDrv =12v ID=35A
Tj =25C
- 80 88 VDrv =12v ID=35A
Tj =150C
Reverse voltage drop- At OFF mode
VR - - 5.0
V ID=10A Tj =25C
- - 5.6 ID=10A Tj =150C
Reverse voltage drop- At ON mode
VR - - 0.4
V ID=10A Tj =25C
- - 0.6 ID=10A Tj =150C
Reverse recovery time trr - - 0 ns
Reverse recovery charge Qrr - - 0 nC
Output Charge QOSS - - 85 nC VDrv=0v VDS=0-800v
Dynamic per Single Switch
Input capacitance Ciss - 800 900
pF f=1MHz VDrv =0V VDS=800V
Output capacitance Coss - 120 140
Reverse transfer capacitance Crss - 1.3 2.6
Effective Output Capacitance, Energy Related
CO(ER) - - 280 pF VDrv =0 to 12V VDS=0 to 800V
Turn-on delay time td(on) - 7.5 -
ns
VDS=800V VDrv =0V to 12V Rg=5 Ω ID=32A
Fall time tf - 4 -
Turn-off delay time td(off) - 36 -
Rise time tr - 10 -
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
4/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
1) Each transistor
NTCS0402E3104FHT - Thermistor
Rated Resistance R25 100 kΩ TNTC = 25°C
Deviation of R100 ∆R/R -3.4 3.4 % TNTC = 100°C, R100 =6.9kΩ
Power dissipation P25 70 mW TNTC = 25°C
Resistance @ 50°C R50 36.306 kΩ TNTC = 50°C
Resistance @ 80°C R80 12.742 kΩ TNTC = 80°C
Resistance @ 100°C R100 6.897 kΩ TNTC = 100°C
Module
Isolation Test Volatge VISOL 2.5 kV RMS, f=50Hz, t=1 min
Stray Inductance L 15 nH
Electrical characteristics (Tj =25C unless otherwise specified)1)
Parameter Symbol Values
Unit Conditions Min Typical Max
Drive characteristics
Drive Current IDrv 2 A
Midpoint to case Capacitance
Capacitance CC - 40 - pF @ 1 MHz 0.1V RMS
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
5/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Pin Characteristic
Description Symbol Values
Unit Min Typical Max
External PWM Drive VDrv 0 11 12 V
Pin 16D +12V-HS 12V-HS 11 12 15 V
Pin 16F GND-HS GND-HS
Pin 1G +12V-LS 12V-LS 11 12 15 V Pin 16F GND-LS GND-LS
Sense Voltage @ 10A High side C.S-HS 20 25 30 mV
Sense Voltage @ 10A Low side C.S-LS 20 25 30
NTC Resistance @ 125C NTC 2.53 2.64 2.75 kΩ
NTC Resistance @50C NTC 28.4 29.9 31.5
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
6/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Package Outlines
Top View
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
7/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Typical Operating Circuit
Note: 12V-HS and 12V_LS are floating voltages, 1500V breakdown is required in between.
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
8/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Electrical characteristics diagrams
Figure 1: Switching Energy
Figure 2: GaN transistor transfer characteristic (source connected to Vdd,Vds=10V)
Figure 3: GaN transistor output characterictics
Figure 4: Switching time
Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com
Rev. 1.20 /
9/9
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Figure 5: Typical capacitances
Important Notice – VisIC Technologies reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products, latest issue, and to discontinue any product. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Unless expressly approved in writing by an authorized representative of VisIC technologies , VisIC technologies components are not designed or tested for use in, and is not intended for use in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, weapons systems, authorized or warranted for use in lifesaving, life sustaining, military, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. VisIC Technologies hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. All rights reserved.