ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1

PHOTODETECTORSAND

SILICON PHOTO MULTIPLIER

ESE seminarPierre Jarron, Francois Powolny15 October 2008

OUTLINEOUTLINE2 Brief history and overview of photodetectors

Types of photodetectorsTypes of photodetectorsphototubesSemiconductor devicesAvalanche or secondary electron multiplicationAvalanche photodiode

Introduction to silicon PMGeiger mode avalanche semiconductor devicesg

Principle of silicon PMProcess and technologiesBasic architectureBasic architecture

Performance of silicon PMQuantum resolution, detection efficiencyTi i l tiTiming resolution

Readout electronicsApplications

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Historical beginning of photodetectorsthe photoelectric effectthe photoelectric effect

3

When Einstein published his seminal 1905 paper on the particle theory of light, Millikan was convinced p p p p y g ,that it had to be wrong, because light was considered as purely a wave.

He undertook a long experimental program to test Einstein's theory.

His results confirmed Einstein's predictions in every detail, but Millikan was not convinced of Einstein's radical interpretation, and as late as 1916 he wrote, "Einstein's photoelectric equation... cannot in my p , , p q yjudgment be looked upon at present as resting upon any sort of a satisfactory theoretical foundation," even though "it actually represents very accurately the behavior" of the photoelectric effect.

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Photodetectors typeyp4

Goal: converting the energy of absorbed photons into a measurable electrical signalBasic parameters: single photon or not, speed, gain, quantum efficiency, QE f(wavelength)

3 types

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Photoelectric tubessingle photon detection

5

All based on photocathodeDevices based on electron multiplicationp

Dynodes based photoelectric tube (PMT)Micro channel plate (MCP) based photoelectric tube

Device based on electron bombarded silicon sensorHybrid photoelectric detector

PrincipleGeneration of photoelectron with a photocathode

R. Millikan experimental deviceElectron multiplication with secondary electron

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Avalanche in vacuum or ionization in silicon

Photo-Multiplier-Tube (PMT) history6

Who invented the PMTIt is a Russian physicist and engineer L.A Kubetsky

In August 1930, he proposed a device with a photocathode and a series of dynodes multiplying the primary electron with secondary l i ielectron emission

Th fi h l i li b i h ld “K b k ’ b i 1930

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

The first photomultiplier tube in the world: “Kubetsky’s tube in 1930But for others the first PMT was developed by V.K.Zworykin et al. at RCA in 1936

The photomultiplier tubep p7

Photocathode, work function

Typical characteristics• Photocathode quantum efficiency: 30% (70% of photons are not converted)• Signal gain up to 108

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

• Dynode voltage: 1000-2000V

Microchannel plate (MCP)p ( )8

MCP i i l Ultra fast Single Photon detector : pixilated MCP- PMTDone in collaboration with Space Research center Leicesterand Photek for time resolved fluorescence CERN TT project

MCP principle

h t th d

ΔV provides e- acceleration : defines transit time photocathode to MCP and e- energy for 1st collision in the MCP

Gain : ~ 105 to 106

photocathode

MCPChevron stack

z

d1

z or t

Emitted e- :Distributed in time (TTS) and in energy

Position at t = t1

Position at:t = t1+time1 Vacuum

V1

CERN (Rui)Multi-anode on multilayer ceramic

xdres εres Resistive layer

ElectrodeV2

~ 5 10^5 e-

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Image intensifier~ 2 10^6 e-

20 ps time resolution single photon detection

HPD CERN developmentp9

HPD principleUS HPD patent 1975was called electron bombarded device

LHCb-RICH HPD T. Gys

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

X HPD C. Joram

Semiconductor photodetectorsp10

Ph t d t b d d ti it i tiPhotoconductors: based on conductivity variationsPhotodiodes: based on junction, heterojunctions

PN-diodes photovoltaic (ex: solar cells)PN-diodes, photovoltaic (ex: solar cells)PIN-diodesPhototransistorCCDSchottky photodiode (metal-semiconductor)Linear avalanche photodiodes(APD)Linear avalanche photodiodes(APD)Geiger mode avalanche APDSilicon PM

Band gap engineered photodetectorsQuantum well infrared photodetector(QWIP)Stair case a alanche photodiode

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Stair case avalanche photodiode

Photoconductor11

Optical electron-hole pair generation changes the conductivity of a semiconductor material

Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR)Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR)

Applications: security alarm, street lights, IR-astronomy, IR-spectroscopy

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Photovoltaic detector12

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

PN photodiodep13

Reverse biased PN junction

Depleted MOS structureC-band

used in CCD

V-band

Reversed bias

Depleted silicon depth

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Avalanche photodiodep14

Avalanche in silicon P-N junctionKnown since 45 years

Journal of applied physicsVol.32-6, Vol. 34 – 6

But very slow developmentBut very slow development

I h photocurrentIph photocurrent

λ photon wavelength

c photon velocity

h Planck's constant

q electronic charge

Pinincident optical

power (W)

M photoelectric gain

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

p g

η quantum efficiency

Single photon avalanche photodiode15

SPAD G i l h dSPAD, Geiger avalanche modeSingle photon detection, binary deviceNoise: single thermal electronBiased above breakdown VBD

Gain Very fast device : discharge of CD on the

qCVVgain APDBDa ).( −=

Very fast device : discharge of CD on the external low resistance

OFFphoton

Quenching

ON

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. PowolnyIn Sensors 2008, 8, 4636-4655

Comparison of S-P photodetectorsp p16

PMT Linear-mode APD Geiger-mode APD

Photoelectric gain 10,000–1,000,000 10–100 10,000–300,000

Excess noise factor <2 >2 2

Max. detection probability

<25% <50% 25%–100%

Operating temperature 240°K 240°K 300°K

Voltage bias >1000 V 30–500 V 30–70 V Detection speed <1 ns pulses >20 ns pulses <1 ns pulses e ec o speed s pu ses 0 s pu ses s pu sesAfterpulsing No no yes Wavelength 0.3-1.6 µm 0.4-1.1 µm 0.4-1.1µm Magnetic field Yes No No susceptibility Reliability <1000 hr. <100,000 hr >1000 hr. ?Large array capability Yes MAPMT yes ?

15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Crosstalk N/A No Poor

NINO 0.25 circuit used in ALICE TOF

SPAD/Sipm signal 20-50 fC/single photon avalancheSPAD/Sipm signal 20 50 fC/single photon avalancheGain 2.105 , 1.5 ns,

Current mode input stageCommon gate configurationNoise 3000 e-NINO works like a QTC or TOTJitter 10 ps rms for 100 fC

NINO Block diagram

×6 ×6 ×6 ×6

Response to ultra fast analogue pulse

NINO 0.13 results

5 to 40 fC