Photodiodes • APDs • Photoreceivers • Electro-Optical ...Voxtel Catalog, rev. 07, 10/2016...

P h o t o d i o d e s • A P D s • P h o t o r e c e i v e r s • E l e c t r o - O p t i c a l I n s t r u m e n t s

2 0 1 6 C A T A L O G V.5

1

Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.

2

Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our products are providing our customers with improved solutions for a variety of commercial, scientific, and military sensing applications, and are providing the performance to make new applications possible.

The company was founded in 1999 with a strong focus on innovation and on bringing advanced electo-optics technologies to market, quickly and efficiently. We anticipate and translate application needs into innovative and cost-effective solutions, which we deliver to the market on time and with exceptional quality, allowing both Voxtel and our channel partners an optimal return on investment and rate of growth.

©2016 Voxtel, Inc.

Voxtel Headquarters:

15985 NW Schendel Ave. #200

Beaverton, OR 97006

LEGAL DISCLAIMER

Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors.

Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice.

Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors

in advertised prices are not binding on Voxtel, Inc.

INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,

BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION,

OR NON-INFRINGEMENT.

Voxtel strives to be the industry’s first-choice solution for electro-optical devices, subsystems, and instrumentation.

2


ContentsIntroduction to APDs ........................................................................................................................... 4

Photoreceivers

• Deschutes Photoreceivers ........................................................................................................ 6 • Siletz Photoreceivers ............................................................................................................. 13

Packaged APDs

• Deschutes Packaged APDs ..................................................................................................... 20 • Siletz Packaged APDs ............................................................................................................. 27

Submounted APD Dies

• Deschutes Submounted APD Dies .......................................................................................... 34 • Siletz Submounted APD Dies .................................................................................................. 41

Photoreceiver Support Module

• Electronics Support Module ................................................................................................... 48

Contact .............................................................................................................................................. 50

3


Introduction to APDsVoxtel’s APDs offer superior response and linear-mode, low-light-level detection capabilities that conventional telecommunications APDs and Geiger-mode APDs cannot offer.

Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often prefer the Deschutes™ APDs and photoreceivers for their modest price and low-noise performance. A variety of high-performance and low-light-level applications are best served by our Siletz™ line of high-gain, high-responsivity products.

Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated products), in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and optical input.

4


Photoreceivers

5

InGaAsAPDsforsignalgain

Lowexcessnoise(keff≈0.20)gain

Lownoisetransimpedanceamplif ier(TIA)

Hermetichousingwithther-moelectriccooling(TEC)

Superiorsignal-to-noise(STN)performance

Lasercom

LADAR/LIDAR

Fluorescencestudies

Biological imaging

NIRconfocalmicroscopy

Applications

Features

Deschutes™ PhotoreceiversMHz-Class Receivers with High-Responsivity, Back-Side-Illuminated NIR InGaAs/InAlAs APDs

Model RDC1-NJAF: 200 µm APD, 300 MHzModel RDC1-JJAF: 75 µm APD, 580 MHzModel RYC1-NJAF: 200 µm APD, 200 MHzModel RVC1-NJAF: 200 µm APD, 120 MHz

Voxtel’s RxC‑1000 Series high‑sensitivity photoreceivers integrate our Deschutes backside‑illuminated avalanche photodiodes (APDs) with low‑noise, high‑bandwidth transimpedance amplifiers (TIAs). The backside‑illuminated configuration of the Deschutes detectors provides both higher responsivity and lower capacitance than competing frontside‑ illuminated APDs. The APD is custom‑engineered for reduced excess noise, which allows this photoreceiver to achieve higher sensitivity, better signal‑to‑noise performance, and lower bit error rate (BER) than conventional tele‑com APDs. A single‑stage thermoelectric cooler (TEC) is included to stabilize temperature.

The RxC‑1000 Series of photoreceivers comes standard with a large‑area, low-noise 200-μm APD, and is also available with a smaller 75-µm APD, which provides increased bandwidth and sensitivity. Contact Voxtel for more information on this and other options.

Standard fiber pigtail options for the 75-µm receivers include 62.5/125 (0.37NA) graded-index and 105/125 (0.37NA) step-index multi-mode fibers; other fiber options can be custom ordered. Optionally available with the photoreceivers are support electronics modules, which provide power con‑ditioning and TEC control.

Deschutes™ InGaAs APD PhotoreceiversRxC-1000 Series

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

6

D e s c h u t e s S e r i e s N e a r - I n f r a r e d A P D s

SIDE VIEWwith cap

BOTTOM VIEW

2.39 ±0.15mm

6.65 ±0.14mm

0.38 ±0.03mm

6.35 mm

Ø 15.25 mm

10.16 mm

Ø 0.45 mm

Ø 1.50 mm

1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+

7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C

0.80 mm

5.08

mm

2.54

mm

0.80 mm

1 2 312

1 2 3

12

10.16 mm

Ø 15.25 mm

Ø 0.45 mm

Ø 1.50 mm

0.80 mm

5.08

mm

2.54

mm

0.80 mm

Ø 16.50 mm

Ø 8.00 mm

12.83 mm 3.61 mm 1000 mm

0.70 mm

6.35 mm

Ø 3.81 mm

Ø 16.50 mm

BOTTOM VIEW TOP VIEWSIDE VIEW

17.14 mm

TSense+ (B/C)

TSense– (E)

VCC

TEC–

TEC++APD

Gnd

Gnd

N/C

Out+Out–

N/CTSense

Spectralresponsivityandquantumef-ficiencyof200µmAPDat298K.

0.0

0.2

0.4

0.6

0.8

1

900 1100 1300 1500 1700

Wavelength [nm]

Deschutes BSI Responsivity

Deschutes BSI QE

Model Diameter Bandwidth NEP

RDC1-NJAF 200μmAPD 300MHz X

RDC1-JJAF 75μmAPD 580MHz X

RYC1-NJAF 200μmAPD 200MHz X

RYC1-NJAF 200μmAPD 120MHz X

Packaged InGaAs APDs Deschutes™RxC-1000 Series


7

Linearity of Response: RDC1-JJAC 580-MHz

LinearityofresponseintheDeschutesphotoreceiver,model

RDC1-JJAF.20-MHzmodulatedsignal.

M o d e l R D C 1-J J A F75 - µ m - d i a m e t e r 5 8 0 - M H z A P D P h o t o r e c e i v e r

Parameter Min Typical Max Units

Spectral Range, λ 950 1064–1600 1750 nm

Active Diameter 75 μm

Bandwidth 200 MHz

APD Operating Gain, M 1 15 20

Receiver Responsivity at M=10i 100/140 kV/W at 1064/1550 nm

Noise Equivalent Power at M=20 3.1/2.4 nW at 1064/1550 nm

Low Frequency Cutoff 30 kHz

APD Breakdown Voltage, VBR 45 50 55 V @ 295 K

TEC ∆T 40 K @ 295 K

TEC Supply 1.8/1.9 A/V

Temp Sensing Diode

Voltage and ∆V/K ii 0.480.50

-2.18 mV/K0.51 V

TIA Power 20 mA @ 3.3 V

Output Impedanceiii 75 90 Ω

Overload/Saturation Power iv 100 µW

Maximum Instantaneous

Input Powerv 1 mW

Window Thickness 0.76 0.94 1.12 mm

Window Transparency 95/98% 1064/1550 nm

i 10 MHz, -40 dBm signalii Sourcing 10 µA, T=298 Kiii Single-ended; 100 Ω differentialiv 1550 nm signal with an APD multiplication gain of M=10v APD multiplication gain of M=10 with a 10 ns 1064 nm signal at a 20 Hz PRF

250

200

150

100

50

00.1 0.30.2 0.5 13 2

Signal Power [µW]

Resp

onsi

vity

[kV/

W] Avg.

95%90%

Avg.95%90%M=10

M=20

S p e c i f i c a t i o n s



8

Linearity of Response: RDC1-NJAC 300-MHz

LinearityofresponseintheDeschutesphotoreceiver,model

RDC1-NJAF.20-MHzmodulatedsignal.




Bandwidth 300 MHz




Low Frequency Cutoff 30 kHz


TEC ∆T 40 K @ 295 K


Temp Sensing Diode


-2.18 mV/K0.51 V


Output Impedanceiii 75 90 Ω

Overload/Saturation Power iv 100 µW


Input Powerv 5 mW



i 10 MHz, -40 dBm signalii Sourcing 10 µA, T=298 Kiii Single-ended; 100 Ω differentialiv 1550 nm signal with an APD multiplication gain of M=10v APD multiplication gain of M=10 with a 10 ns 1064 nm signal at a 20 Hz PRF

250

200

150

100

50

00.1 0.30.2 0.5 13 2

Signal Power [µW]

Resp

onsi

vity

[kV/

W] Avg.

95%90%

Avg.95%90%M=10

M=20


M o d e l R D C 1- N J A F2 0 0 - µ m - d i a m e t e r 3 0 0 - M H z A P D P h o t o r e c e i v e r



9





Bandwidth 200 MHz

APD Operating Gain, M 1 10-15 20



Low Frequency Cutoff ii 30 kHz

APD Breakdown Voltage, VBR 45 50 55 V @ T = 295 K

TEC ∆T 40 K @ T = 295 K


Temp Sensing Diode,

Voltage and ∆V/K iii 0.480.50

-2.18 mV/K0.51 V

TIA Power 25 mA @ 5V

Output Impedenceiv 40 50 60 Ω

Overload/Saturation Powerv 20 35 μW

Max Instantaneous Input Powervi 5 mW



i 10 MHz, -40 dBm signalii -3 dB, 1 µA input iii Sourcing 10 µA, T=298 Kiv Single-ended; 100 Ω differentialv 1550 nm signal with APDmultiplication gain of M=10vi APD multiplication gain of M=10 with a 10 ns 1064 nm signal at 20 Hz PRF

10

100

1,000

Frequency [Hz]

Rece

iver

Res

pons

ivity

@15

50 n

m [

kV/W

]

M=10

M=20

1.E+05 1.E+06 1.E+07 1.E+08 1.E+09

M o d e l RYC 1- N J A F2 0 0 - µ m - d i a m e t e r 2 0 0 - M H z A P D P h o t o r e c e i v e r



10

RVC1-NJAA Bandwidth

1.E+05 1.E+06 1.E+07 1.E+08 1.E+09Frequency [Hz]

Rece

iver

Res

pons

ivity

[kV/

W] M=10

M=20

10

100

1000





Bandwidth 120 MHz




Low Frequency Cutoff 7 25 kHz


TEC ∆T 40 K @ 295 K


Temp Sensing Diode


-2.18 mV/K0.51 V

TIA Power 22 28 36 mA @ 3.3 V

Output Impedenceiii 50 67 80 Ω

Overload/Saturation Power iv 100 300 μW

Max Instantaneous Input Powerv 5 mW



i 10 MHz, -40 dBm signalii Sourcing 10 μA, T=298 Kiii Single-ended; 100 Ω differentialiv 1550 nm signal with an APD multiplication gain of M=10v APD multiplication gain of M=10 with a 10 ns 1064 nm signal at a 20 Hz PRF

M o d e l R VC 1- N J A F2 0 0 - µ m - d i a m e t e r 12 0 - M H z A P D P h o t o r e c e i v e r



11

R - C1 1 - J - F

Device Type TIA Detector Elements Diameter Package

Option Lens Option Rev.

R = Photo-

receiver

D = 580 MHz

Y = 250 MHz

V = 160 MHz

C = Deschutes

APD

1 = Single

Element

J = 75 μm

N = 200 μm

J = TO-8 w/ 1-Stage

TEC

K = TO-46

A = Flat

Window

L = Single-mode

(SM) 7μm

P = Multi-

mode (MM) 50/125μm

Q = MM

62.5/125μm

R=MM 105/125μm

F = 40ºC ∆T 1-Stage

TEC

Not all combinations of product features are available. Contact Voxtel for specific ordering information and parts availability.*Receiver bandwidth depends on APD diameter and capacitance.

O r d e r i n g I n f o r m a t i o n F o r R x C -10 0 0 S e r i e s A P D P r o d u c t s

C a u t i o n D u r i n g A P D O p e r a t i o nIf an APD is operated above its breakdown voltage without some form of current protection, it can draw enough cur‑rent to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current‑limiting circuit in the supporting electronics.

The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operat‑ing point that is safe at room temperature may put the APD into breakdown at low temperature. The approxi‑mate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled.

Low‑noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher

than the readout’s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the in‑puts to a power supply voltage line.

As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be imple‑mented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.

Upon request, Voxtel will gladly assist customers in imple‑menting the proper controls to ensure safe and reliable operation of APDs in their system.


Voxtel Literature No. RxC-1000 Series Deschutes Photoreceivers, 19July2017 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.

12

Applications

Features

InGaAs/InAlAs single-carrier

multipli cation APD (SCM-APD)

Integrated low-noise

transimpedance amplifier

950–1700 nm spectral response

High responsivity

Low excess noise

High bandwidth

High gain

–5 to +75 °C operating

case temperature

Range finding

LADAR/LIDAR

Fluorescence measurements

Free-space optical

communication systems

Spectroscopy, electrophoresis,

chromatography

Ultra-fast pulse and transient

measurements

Voxtel offers high-sensitivity photoreceivers based on its Siletz™ single-carrier multiplication APDs (SCM-APDs) in the RXP-1000 product series. High bandwidth as well as 75 μm and 200 μm optical areas make these ideal for laser rangefinders, laser designators, free space optical communication, optical instrumentation, and LADAR/LIDAR.

Voxtel’s VFP-1000 Series of Siletz™ SCM-APDs integrates low-noise with transimpedance amplifiers (TIAs). Voxtel’s SCM-APDs offer extremely low excess-noise NIR–SWIR APDs, allowing the receiver to operate at high avalanche gain, boosting the optical signal over the amplifier noise level without the degrading effects of avalanche-induced excess noise. These photoreceivers are the most sensitive receivers available on the market today. A single-stage thermoelectric cooler (TEC) is included to eliminate temperature-induced gain variations and allow optimal performance over the range of application environments.

Standard fiber pigtail options for the 75 µm receivers include 62.5/125 (0.37 NA) graded-index and 105/125 (0.37 NA) step-index multi-mode fibers; other fiber options can be custom ordered. Optionally available with the photoreceivers are Support Electronics Modules, which provide power conditioning and TEC control.

SILETZ BSI™ APD PhotoreceiversMHz- and GHz-Class Receivers with High-Gain, Low Excess

Noise NIR Single-Carrier Multiplication APDs (SCM-APDs)

Model RDP1-NJAF: 200 µm APD, 350 MHzModel RIP1-NJAF: 200 µm APD, 1 GHzModel RIP1-JJAF: 75 µm APD, 2.2 GHzModel R2P1-JCAA: 75 µm APD, 1.5 GHz TO-46

RxP-1000 SeriesSiletz BSI™ APD Photoreceivers

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862

13

S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r s

APD Photoreceivers Siletz BSI™

Spectral responsivity curve and quantum

eff iciency at gain M = 1, T = 295 K. 200-µm SCM-APD.

0.0

0.2

0.4

0.6

0.8

1.0

900 1100 1300 1500 1700

Wavelength [nm]

Voxtel SCM-APD Responsivity

Voxtel SCM-APD QE

Standard receiver configurations with typi-cal NEP valves and bandwidths

SIDE VIEWwith cap

2.39 ±0.15mm

6.65 ±0.14mm

0.38 ±0.03mm

6.35 mm

BOTTOM VIEW

Ø 15.25 mm

10.16 mm

Ø 0.45 mm

Ø 1.50 mm

1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+

7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C

0.80 mm

5.08

mm

2.54

mm

0.80 mm

1 2 312

1 2 3

12

10.16 mm

Ø 15.25 mm

Ø 0.45 mm

Ø 1.50 mm

0.80 mm

5.08

mm

2.54

mm

0.80 mm

Ø 16.50 mm

Ø 8.00 mm

12.83 mm 3.61 mm 1000 mm

0.70 mm

6.35 mm

Ø 3.81 mm

Ø 16.50 mm

BOTTOM VIEW TOP VIEWSIDE VIEW

17.14 mm

Bandwidth [Hz]

Noi

se E

quiv

alen

t Pow

er [n

W]

1.00E+08 1.00E+09 1.00E+10

18

16

14

12

10

6

4

0

2

8

RVC1-NJAFRYC1-NJAFRDC1-NJAFRDP1-NJAFRIP1-NJAFRIP1-JJAF (75µm)

TSense+ (B/C)

TSense– (E)

VCC

TEC–

TEC++APD

Gnd

Gnd

N/C

Out+Out–

N/CTSense

RxP-1000 Series

Ø 4.22

1.4

Ø 5.31 mm

57°57°

82° 82°

Ø 2.54

2.55

4.705.38

BOTTOM VIEWSIDE VIEWwith cap

0.77

2.70

1.37

Pinout1) DOUT2) VDD3) V+ APD4) DOUT B5) GND

111

5

123

4

TOP VIEWheader only

TO-46

Package

TO-8

Package

Fiber-coupled TO-8 Package


14

M o d e l R D P1- N J A F

Specifications





Bandwidth 350 MHz


Receiver Responsivity at M=40 400/560 kV/W at 1064/1550 nm

Noise Equivalent Power at M=40 10/8 nW at 1064/1550 nm

Low Frequency Cutoffi 30 kHz


TEC ∆T 40 K @ T = 298 K


Temp Sensing Diode

Voltage and ∆V/Kii0.48

0.50

-2.18 mV/K0.51 V


Output Impedanceiii 60 75 90 Ω

Overload/Saturation Poweriv 100 µW


Input Powerv5 mW


i - 3 d B , 4 0 µ A i n p u ti i S o u r c i n g 1 0 µ A , T = 2 9 8 Ki i i S i n g l e - e n d e d ; 1 5 0 Ω d i f f e r e n t i a li v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D

m u l t i p l i c a t i o n g a i n o f M= 1 0

S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r2 0 0 µ m , 3 5 0 M H z

Frequency [MHz]

Rece

iver

Res

pons

ivit

y @

155

0 nm

[kV

/W]

M = 10M = 40

1

1

1

1 10 100 1000 10000


15

M o d e l R I P1- N J A F

RxP-1000 SeriesAPD Photoreceivers Siletz BSI™




Bandwidth 1 GHz




Low Frequency Cutoffii 65 kHz


TEC ∆T 40 K @ T = 298 K


Temp Sensing Diode

Voltage and ∆V/Kiii0.48

0.50

-2.18 mV/K0.51 V


Output Impedanceiv 42.5 50 57.5 Ω

Overload/Saturation Powerv 100 µW




i 1 0 M H z , - 4 0 d B m s i g n a li i 1 3 d B , 4 0 µ A i n p u ti i i S o u r c i n g 1 0 µ A , T= 2 9 8 Ki v S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a lv 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n

A P D m u l t i p l i c a t i o n g a i n o f M= 1 0

Specifications

1

10

100

1 100 1,000 10,000Frequency [MHz]

Rece

iver

Res

pons

ivity

@15

50 n

m [k

V /

W]

10

M=10M=40

S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r2 0 0 µ m , 1 G H z


16

M o d e l R I P1-J J A F

Specifications





Bandwidth 2.2 GHz


Receiver Responsivity at M=40 88/115 kV/W at 1064/1550 nm


Low Frequency Cutoffi 65 kHz

APD Breakdown Voltage, VBRii 70 74 80 V

TEC ∆T 40 K @ T = 298 K


Temp Sensing Diode

Voltage and ∆V/Kiii0.48

0.50

-2.18 mV/K0.51 V


Output Impedanceiv 42.5 50 57.5 Ω

Overload/Saturation Powerv 100 µW




i - 3 d B , 4 0 µ A i n p u ti i T= 2 9 5 Ki i i S o u r c i n g 1 0 µ A , T = 2 9 8 Ki v S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a lv 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D

m u l t i p l i c a t i o n g a i n o f M= 1 0

1

10

100

Rece

iver

Res

pons

ivity

@15

50 n

m [

kV/W

]

1 10 100 1,000 10,000

M = 10M = 40

Frequency [MHz]

S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r

75 µ m , 2 . 2 G H z


17

Ordering Information For VFP-1000 Series APD Products

Not all combinations of product features are available. Please contact

Voxtel for specific ordering information and parts availability.

C a u t i o n D u r i n g A P D O p e r a t i o n

If an APD is operated above its breakdown volt-age without some form of current protection, it can draw enough current to permanently damage the de-vice. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.

The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage de-creases when the APD is cooled. Consequently, a re-verse bias operating point that is safe at room tem-perature may put the APD into breakdown at low temperature. The approximate temperature depen-dence of the breakdown voltage is published in the spec sheet for the part, but caution should be exer-cised when an APD is cooled.

Low-noise readout circuits usually have high im-pedance, and an unusually strong current pulse from the APD could generate a momentary excessive volt-

age that is higher than the readout’s supply voltage, possibly damaging the input to the amplifier. To pre-vent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line.

As noted in the specification, another consider-ation is that the APD gain changes depending on temperature. When an APD is used over a wide tem-perature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.

Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system.

R - P1 - - - -

Device Type Amplifier Detector Diameter Package Option Lens Option Revision

R=PhotoreceiverD=580MHz TIAI=2.5GHz TIA2=1.7GHz TIA

P=Siletz SCM-APD

J=75μmN=200μm

C=TO-46J=TO-8 with 1-Stage TEC

A=Flat Window

Q=MM 62.5/125μm

R=MM 105/125μm

S=MM 200/125µm

RxP-1000 SeriesAPD Photoreceivers Siletz BSI™

Voxtel Literature No. RxP-1000 Series, Version date: 07/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.

18


Packaged APDs

19

Applications

• Lasercom

• Laser rangefinding

• LADAR/LIDAR

• Fluorescense studies

Deschutes™ Packaged APDsReduced-excess-noise APD in TO-46 or TO-8 with optional 3-stage thermoelectric cooler

Model VFC1-xCAA Packaged APD (TO-46)Model VFC1-xKAB Packaged APD (TO-8)

Reduced-excess-noise avalanche photodiodes (APDs) in hermetic TO-46 or TO-8 packages allow users to easily integrate Voxtel's 950 – 1700-nm-re-sponse APDs into high-performance electro-optical systems. The TO-8 pack-age allows for a 3-stage thermo-electric cooler, which can provide a 100 °C temperature differential from ambient (packages rated down to -40°C.)

Voxtel’s VFC-1000 series APDs are designed to deliver the best possible sen-sitivity for high-bandwidth near infrared (NIR) and short-wavelength infrared (SWIR) optical applications. With low avalanche noise and high quantum ef-ficiency over the 950 – 1700-nm spectral band, including the eyesafe wave-lengths beyond 1400 nm, the VFC-1000 InGaAs APDs provide enhanced re-sponsivity relative to p-i-n photodiodes, with lower noise than conventional NIR APD designs.

Voxtel’s thin InAlAs multiplication region InGaAs APD technology suppress-es the excess multiplication noise associated with the avalanche process, improving the signal-to-noise ratio of the detector. Contemporary APDs achieve high responsivity through internal current gain, but the usefulness of the gain of these APDs is undermined by the accompanying noise. Voxtel’s APDs can be operated at relatively high gain with a smaller noise penalty, providing a significant advantage. Coupling the APD to a low-noise amplifier produces a receiver with superior noise equivalent power (sensitivity).

Features

• Low-capacitance mesa ar-chitecture

• Back-i l luminated for highsensitivity

• Wide spectral response -950-1700 nm

• Less (4x lower) excessnoise than other commer-cial APDs

• Low noise gain; M>20

Deschutes™ Packaged InGaAs APDsVFC-1000 Series


20

V F C - 1 0 0 0 S e r i e s

0 1 2 3 4 5 6 7 8 9 10 11 12

5

4

3.5

3

2

1.5

1

4.5

2.5

Gain (M)

Exce

ss N

oise

Fac

tor (

F)

k=0.4 (Telecom APD)k=0.2Deschutes BSI R-APD

200.00 250.00 300.00 350.00Temperature [K ]

M=1

0 D

ark

Cur

rent

[A]

1.E-07

1.E-08

1.E-09

1.E-10

Idark = 6x1015e0.05T

R2 = 0.994

200.00 250.00 300.00 350.00Temperature [K ]

Brea

kdow

n Vo

ltage

(V)

47.50

45.50

45.00

47.00

46.50

44.50

46.00

43.50

44.00

42.50

43.00

Vbr = 0.34T+36.1

R2 = 0.999

Spectral responsivity and quantum efficiencyof 200µm APD @ 298K

Effects of temperature on dark current and breakdown voltage of a 200-µm Deschutes APD at M=10

Excess noise of the Deschutes APD, k~0.2

M o d e l V F C 1 - x CAA / x K A B

0.0

0.2

0.4

0.6

0.8

1

900 1100 1300 1500 1700Wavelength [nm]

Res

pons

ivit

y [A

/W]


Deschutes BSI QE

0

20

40

60

80

100

Packaged InGaAs APDs Deschutes™VFC-1000 Series


21

M o d e l V F C 1 - x CAA / x K A B

Mechanical Information

TO-46 Package

TO-8 Package

V F C - 1 0 0 0 S e r i e s

M e c h a n i c a l In f o r m a t i o n



22






Responsivity at M=1 .66

.91

.73

1.01

.78

1.04

A / W

λ=1064 nm

λ=1550 nm

Excess Noise Factor, F(M,k)3.4

4.3

M=10

M=15

Noise Spectral Density @ M=10 0.48 pA / Hz1/2

Dark Current @ M=1i 0.8 1.9 2.5 nA

Total Capacitanceii 0.76 pF

Bandwidth 2.0 GHz

Breakdown Voltage, VBRiii 44 49 55 V

∆VBR/∆T 30 34 39 mV / K

Minimum Internal Temperature -40 °C

TE cooler ratingiv 1.9 / 1.2 V / A

Temperature Sensing Diode

Voltage and ΔV/Kv0.48

0.50

-2.18 mV / K0.51 V

Maximum Instantaneous Input Powervi1 mW

i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv For VFC1-xKAB devices, package at 298 Kv Sourcing 10 μA, T=298 Kvi 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

M o d e l s V F C 1 - J C A A ( T O - 4 6 ) a n d V F C 1 - J K A B ( T O - 8 w / 3 - s t a g e T E C )7 5 - m i c r o n A P D , 2 . 0 G H z o n c e r a m i c s u b m o u n t



23







.91

.73

1.01

.78

1.04

A / W

λ=1064 nm

λ=1550 nm


7.9

M=10

M=20


Dark Current @ M=1i 6 8.1 10.0 nA


Bandwidth 500 MHz


∆VBR/∆T 30 34 39 mV / K





0.50

-2.18 mV / K0.51 V


i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAivFor VFC1-xKAB devices, package at 298 Kv Sourcing 10 μA, T=298 Kvi 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

M o d e l s V F C 1- N C A A ( T O - 4 6) a n d V F C 1- N K A B ( T O - 8 w/3 - s t a g e T E C)2 0 0 - m i c r o n A P D, 5 0 0 M H z o n c e r a m i c s u b m o u n t



24







.91

.73

1.01

.78

1.04

A / W

λ=1064 nm

λ=1550 nm


7.9

M=10

M=20


Dark Current @ M=1i 40 60 90 nA


Bandwidth 90 100 200 MHz


∆VBR/∆T 30 34 39 mV / K





0.50

-2.18 mV / K0.51 V


i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv For VFC1-xKAB devices, package at 298 Kv Sourcing 10 μA, T=298 Kvi 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

M o d e l s V F C 1 - P K A B ( T O - 8 w / 3 - s t a g e T E C )5 0 0 - m i c r o n A P D, 10 0 M H z o n c e r a m i c s u b m o u n t



25

V F C 1 - - A -

Device Device Type

Detector Detector Diameter Package Window Revision

V = APD

F = Linear mode

C = Deschutes

APD

1 = Single

Element

E=30 µmH=50 µmJ=75 µm

N=200 µmP=500 µm

C=TO-46K=TO-8 w/3-

stage TE-Cooler

A=FlatB=Epoxy

Fill

Not all combinations of product features are available. Please contact Voxtel for specific ordering information and parts avail-ability.

O r d e r i n g I n f o r m a t i o n f o r V F C - 1 0 0 0 S e r i e s A P D P r o d u c t s

C a u t i o n D u r i n g A P D O p e r a t i o nIf an APD is operated above its breakdown voltage without some form of current protection, it can draw enough cur-rent to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.

The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operat-ing point that is safe at room temperature may put the APD into breakdown at low temperature. The approxi-mate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled.

Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher

than the readout’s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the in-puts to a power supply voltage line.

As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be imple-mented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.

Upon request, Voxtel will gladly assist customers in imple-menting the proper controls to ensure safe and reliable operation of APDs in their system.


Voxtel Literature No. VFC-1000 Series Packaged APDs, Version date: 08/30/2017 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.

26

Free-space opticalcommunications

Laser range finding

Optical t ime domainreflectometry

Optical coherence tomogra-phy

Fluorescence measurements,spectroscopy, chromatogra-phy and electrophoresis

Replacement for photomulti-plier tubes

Applications

Siletz™ APD ProductsSingle-Carrier Multiplication APDs (SCM-APD) in hermetic

packages with optional 3-stage TE cooler

Model VFP1-xCAA, VFP1-xKAB Packaged APDs

Voxtel Literature No. VFP1-xCAA / xKAB, Version date: 06/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.

VFP-1000 SeriesSiletz™ Packaged APD

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862

Hermetically packaged re-duced-noise NIR InGaAs ava-lanche photodiode (R-APD)

75µm and 200µm diameters

Low excess noise and highgain combine for superiorsensitivity not achieved withconventional APDs

950-1700nm spectral re-sponse

Superior sensitivity notachieved with contemporaryAPDs

TO-46 / TO-08 packaging op-tions include a broadband,doublesided AR-coated flatwindow and 3-stage TE-cooler

Custom devices available

Features

Back-illuminated, high-gain, low-excess-noise, single-carrier multipli-cation APDs (SCM-APDs) in hermetic TO-46 or TO-8 packages allow users to easily integrate Voxtel's 950–1700nm response APDs into high-performance electro-optical systems. The TO-8 packages have a 3-stage thermo-electric(TE) cooler which can provide 100°C tem-perature differential from ambient (packages rated down to -40° C.)

Voxtel’s single-carrier multiplication APDs exceed the capabilities of conventional APDs in gain and noise performance. This allows for ac-tive optical systems with better sensitivity, longer range, and lower laser power. Typical APDs achieve high responsivity, but have excess avalanche noise. Voxtel’s SCM-APDs can operate at high gain with low noise, providing a significant advantage.

The Siletz series of SCM-APDs has a very low effective ratio of ion-ization coefficients (keff ~.02), and operates with low excess noise: F(M) = 2 up to gain M = 10, and F(M) <3 up to M ~ 40. The maximum usable linear-mode gain of Siletz SCM-APDs is typically M = 40. By contrast, standard telecom NIR APDs are generally not useful above M = 15, and carry a much greater noise penalty (k = 0.4; F(M) >7 @ M = 15).

Voxtel’s SCM-APDs are ideal for low-light detection, or any other ap-plications requiring sensitivity in the 900–1700nm spectral band. In-tegrating our SCM-APD with a low-noise amplifier produces a receiver with high responsivity, superior noise equivalent power, and better overall sensitivity for high-bandwidth applications.

27

S i l e t z™ S e r i e s P a c k a g e d A P D s

Voxtel Literature No. VFC1-xCAA / xKAB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.


Packaged APD Siletz™VFP-1000 Series

M O D E L V F P1-x C C A /x K A B

Effec ts o f tempera ture on dark cur ren t and breakdown vo l tage o f a 200µm SCM-APD @ M=50 ± 2

Spectral responsivity curve and quantum efficiency

@ gain M=1, T=295K, 200µm SCM-APD

Temperature [K]

Dar

k Cu

rren

t [A

]

225 250 275 300 325 350

10-5

10-6

darkT

Temperature [K]Brea

kdow

n Vo

ltage

[V]

225 250 275 300 325 350

76

74

72

0.0

0.2

0.4

0.6

0.8

1.0

900 1100 1300 1500 1700Wavelength [nm]

Resp

onsi

vity

[A/W

]Voxtel SCM-APD Responsivity

Voxtel SCM-APD QE

0

20

40

60

80

100

28

M O D E L V F P1-x C C A / x K A B



Siletz™ Packaged APDVFP-1000 Series

Mechanical Information

TO-46 Package

TO-8 Package

Pinout1) TEC –4) TEC +9) Temp Sense –

10) Temp Sense + 11) APD Anode (P) 12) APD Cathode (N)

Ø 15.24

5.72

2.87

1.91

9.53

Ø 0.460.79

0.79 1 4

12 11 10 9

25.40 ± 0.64

9.91

7.16 mm

5.38

2.24 ± 0.31

APD Plane

Active area Ø 1.52

Pinout1) APD Cathode2) APD Anode3) Ground, T Sense –4) T Sense +

SIDE VIEWwith cap

TOP VIEWheader only

Ø .019Ø .016

Ø .171Ø .161

Ø .100

.700

.500

.043

.031

.045

.037

Ø .026Ø .020

.072 in183 mm

Ø .212Ø .209

Ø .048Ø .046.010

.007

.006

.000

45° ± 0.5°

.118

.114

.012

.009

.046

.042

.010 max.

1

2

3

4

S i l e t z™ S e r i e s P a c k a g e d A P D s

M e c h a n i c a l In f o r m a t i o n

29



V F P -10 0 0 S e r i e s P a c k a g e d A P D s75 - m i c r o n , 2 . 0 G H z S C M - A P D

M O D E L V F P1-J C A A ( T O - 4 6)

M O D E L V F P1-J K A B

( T O - 8 w/3 - s t a g e T E C)

SpecificationsParameter Min Typical Max Units





.91

.73

1.01

.78

1.04

A / W

λ=1064nm

λ=1550nm


2.9

M=10

M=40




Bandwidth 2.0 GHz


∆VBR/∆T 29 mV / K


TE-Cooler ratingiv 1.9 / 1.2 V / A



0.50

-2.18mV / K0.51 V


Input Powervi1 mW

i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M> 3i i i T= 2 9 8 K ; I dark> 0 . 1 m Ai vF o r V F C 1 - x K A B d e v i c e s , p a c k a g e a t 2 9 8 Kv S o u r c i n g 1 0 μ A , T = 2 9 8 Kv i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0


30


VFP-1000 Series


Siletz™ Packaged APD

V F C -10 0 0 S e r i e s P a c k a g e d A P D s2 0 0 - m i c r o n , 3 5 0 M H z S C M - A P D

M O D E L V F P1- N C A A ( T O - 4 6)

M O D E L V F P1- N K A B( T O - 8 w/3 - s t a g e T E C)

SpecificationsParameter Min Typical Max Units





.91

.73

1.01

.78

1.04

A / W

λ=1064nm

λ=1550nm


2.9

M=10

M=40






∆VBR/∆T 29 mV / K


TE-Cooler ratingiv 1.9 / 1.2 V / A



0.50

-2.18mV / K0.51 V


Input Powervi5 mW

i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M> 3i i i T= 2 9 8 K ; I dark> 0 . 1 m Ai vF o r V F C 1 - x K A B d e v i c e s , p a c k a g e a t 2 9 8 Kv S o u r c i n g 1 0 μ A , T = 2 9 8 Kv i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0

31





O r d e r i n g I n f o r m a t i o n F o r V F P -10 0 0 S e r i e s A P D P r o d u c t s


If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to destroy itself. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.






V F P 1 - - A -

Device Device Type Detector Diameter Package Window Revision

V=APD F=Linear mode P=Siletz™ 1=Single SCM-APD Element

J=75µmN=200µm

C=TO-46K=TO-8 w/3-stage

TE-Cooler

A=Flat


32


Submounted APD Dies

33

• Low-capacitance high sen-sitivity back-side i l lumi-nated design

• 950–1700 nm response

• Reduced excess noisecompared to conventionalAPDs

• Operation up to a multipl i-cation gain of M=20

• Custom devices availableupon request

• Freespace opticalcommunications

• Laser range finding

• Optical t ime domain re-flectometry

• Optical coherence tomog-raphy

• Fluorescence measure-ments, spectroscopy,chromatography and elec-trophoresis

• Telecommunications

• LADAR/LIDAR

Applications

Features Deschutes™ Submounted APD DiesAvalanche Photodiode w/Submount

Model VFC1-xBXA Series Submounted Dies

Backside-illuminated operation of the DeschutesTM avalanche photodiode (APD) provides both higher responsivity and lower capacitance than compet-ing frontside-illuminated APDs. The APD is custom-engineered for reduced excess noise, which allows this APD to achieve higher sensitivity, better sig-nal-to-noise (SNR) performance, and lower bit error rates (BERs) than con-ventional telecom APDs.

In comparison to conventional telecom InGaAs/InP APDs, which have an excess noise characterized by keff = 0.4, Voxtel’s Deschutes InGaAs/InAlAs APDs, characterized by keff = 0.2, have 40% less excess noise, which allows for lower shot noise over the operating gain of the APD. The increased sensi-tivity of the APD improves system cost, size, weight, and power (C-SWAP) by reducing computational burden and laser power, while increasing standoff range as used in a laser range-finding system.

For ease of integration, these APD die are provided on a ceramic submount with a co-mounted temperature sensor. Smaller footprint submounts with-out the temperature sensor are available.

Deschutes™ Submounted InGaAs APDsVFC-1000 Series


34

D e s c h u t e s™ S e r i e s N e a r - I n f r a r e d A P D s

Submounted InGaAs APDs Deschutes™

0 1 2 3 4 5 6 7 8 9 10 11 12

5

4

3.5

3

2

1.5

1

4.5

2.5

Gain (M)

Exce

ss N

oise

Fac

tor

(F)

k=0.4 (Telecom APD)k=0.2Deschutes BSI R-APD

200.00 250.00 300.00 350.00Temperature [K ]

M=1

0 D

ark

Cur

rent

[A]

1.E-07

1.E-08

1.E-09

1.E-10

Idark = 6x1015e0.05T

R2 = 0.994

200.00 250.00 300.00 350.00Temperature [K ]

Brea

kdow

n Vo

ltage

(V)

47.50

45.50

45.00

47.00

46.50

44.50

46.00

43.50

44.00

42.50

43.00

Vbr = 0.34T+36.1

R2 = 0.999

Spectral responsivity and quantum efficiencyof 200µm APD @ 298K

Effects of temperature on dark current and break-down voltage of a 200-µm Deschutes APD at M=10

Excess noise of the Deschutes APD, k~0.2

0.0

0.2

0.4

0.6

0.8

1.0

900 1100 1300 1500 1700Wavelength [nm]

Res

pons

ivit

y [A

/W]


Deschutes BSI QE

0

20

40

60

80

100

VFC-1000 Series


35

V F C -10 0 0 S e r i e s : M o d e l V F C 1- E BX A3 0 - m i c r o n A P D, 5 . 0 G H z o n c e r a m i c s u b m o u n t




Bandwidth 5.0 GHz


Receiver Responsivity at M=1.66

.91

.73

1.01

.78

1.04

A/W

λ=1064 nm

λ=1550 nm

Excess Noise Factor, F(M,k) 3.4 / 4.3 M=10, M=15

Noise Spectral Density @ M=10 .37 pA/Hz1/2


Total Capacitanceii 35 fF

Bandwidth 5.0 GHz


ΔVBR/ΔT 30 34 39 mV/K


Voltage and ΔV/K iv 0.480.50

-2.18 mV/K0.51 V

Maximum Instantaneous Input Powerv125 µW

i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 µA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

Deschutes™ Submounted InGaAs APDs


VFC-1000 Series


36








.91

.73

1.01

.78

1.04

A/W

λ=1064 nm

λ=1550 nm


4.4

M=10

M=15

Noise Spectral Density @ M=10 0.48 pA/Hz1/2



Bandwidth 2.0 2.5 3.0 GHz


∆VBR/∆T 30 34 39 mV/K


Voltage and ΔV/K iv0.48

0.50

-2.18 mV/K0.51 V

Maximum Instantaneous Input Powerv1 mW

i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 μA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

V F C -10 0 0 S e r i e s : M o d e l V F C 1-J BX A75 - m i c r o n A P D, 2 . 5 G H z o n c e r a m i c s u b m o u n t

VFC-1000 Series


37


Submounted InGaAs APDs Deschutes™ Deschutes™ Submounted InGaAs APDs






.91

.73

1.01

.78

1.04

A/W

λ=1064 nm

λ=1550 nm


4.3

M=10

M=15


Dark Current @ M=1i 6 8.1 10.0 nA




∆VBR/∆T 30 34 39 mV/K



0.50

-2.18 mV/K0.51 V


i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 μA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

V F C -10 0 0 S e r i e s : M o d e l V F C 1- N BX A2 0 0 - m i c r o n A P D, 5 5 0 M H z o n c e r a m i c s u b m o u n t

VFC-1000 Series


38









.91

.73

1.01

.78

1.04

A/W

λ=1064 nm

λ=1550 nm


7.9

M=10

M=20






∆VBR/∆T 30 34 39 mV/K



0.50

-2.18 mV/K0.51 V


i Unity referenced from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 μA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10

V F C -10 0 0 S e r i e s : M o d e l V F C 1- P BX A5 0 0 - m i c r o n A P D, 10 0 M H z o n c e r a m i c s u b m o u n t

VFC-1000 Series

39

V F C 1 - - X A

Device Device Type

Detector Detector Diameter Package Window Revision

V = APD

F= Linear mode

C = Deschutes

Series

1 = Single

Element

E=30µmH=50µmJ=75µm

N=200µmP=500µm

A=Bare DieB=Ceramic Submount

w/Temp Sensor?= Ceramic Submount

w/out Temp Sensor

X=None

Not all combinations of product features are available. Please contact Voxtel for specific ordering information and parts avail-ability.

O r d e r i n g I n f o r m a t i o n f o r V F C -10 0 0 S e r i e s A P D P r o d u c t s


If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough cur-rent to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.

The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operat-ing point that is safe at room temperature may put the APD into breakdown at low temperature. The approxi-mate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled.

Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher

than the readout’s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the in-puts to a power supply voltage line.

As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be imple-mented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.

Upon request, Voxtel will gladly assist customers in imple-menting the proper controls to ensure safe and reliable operation of APDs in their system.

Submounted InGaAs APDs Deschutes™ Deschutes™ Submounted InGaAs APDsVFC-1000 Series

Voxtel Literature No. VFC-1000 Series, Version date: 07/2017 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.

40

Applications

Features High-gain NIR InGaAs single-

carrier-multipl icati ion APD(SCM-APD)

950–1700nm response

High responsivity

Low excess noise and highgain combine for superiorsensitivity not achieved withconventional APDs

Provides high-gain with lownoise, leading the industry insolid-state NIR detection

Custom devices available uponrequest

Free-space opticalcommunications

Laser range finding

Optical t ime domainreflectometry

Optical coherence tomography

Fluorescence measurements,spectroscopy, chromatographyand electrophoresis

Back-illuminated, high-gain, ultra-low-excess-noise SCM-APDs combine the

industry’s highest gain and lowest excess noise, providing unsurpassed

sensitivity in the near infrared spectral range from 950 to 1700nm.

Voxtel’s single-carrier multiplication APDs (SCM-APDs) are photodetectors

that exceed the capabilities of conventional APDs in both gain and noise

performance. This allows for active optical systems with better sensitivity,

longer range, and lower laser power.

APDs achieve high responsivity through internal current gain, but the use-

fulness of this gain is undermined by the accompanying avalanche noise.

Voxtel’s SCM-APDs can be operated at high gain with low noise, providing

a significant advantage.

The Siletz series of SCM-APDs has a low effective ratio of ionization

coefficients (keff ~.02), and can be operated with low excess noise:

F(M)<2 up to M=10, and F(M)<3 up to M~40, with maximum usable linear-

mode gain of Siletz SCM-APDs at typically M=50. Standard telecom NIR

APDs are not useful above M=15, and carry a much greater noise penalty

(k=0.4; F(M)>7 at M=15).

With high gain, low noise and high quantum efficiency, Voxtel’s SCM-APDs

are ideal for low-light-level detection, or other applications that call for

industry-leading sensitivity in the 900–1700 nm spectral band. Coupling

the SCM-APD to a low-noise amplifier produces a receiver with high gain,

superior noise equivalent power, and better sensitivity.

SILETZ™ Submounted APD DieHigh-Gain, Low Excess-Noise NIR Single Carrier

Multiplication APDs (SCM-APDs)

VFP-1000 Series

Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.


Siletz™ Submounted APD DieVFP-1000 Series

VFP-1000 Series

41

S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r s

Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.


Submounted APD Die Siletz™VFP-1000 Series

Effec ts o f tempera ture on dark cur ren t and breakdown vo l tage o f a 200µm SCM-APD @ M=50 ± 2

Spectral responsivity curve and quantum efficiency

@ gain M=1, T=295K, 200µm SCM-APD

Temperature [K]

Dar

k Cu

rren

t [A

]

225 250 275 300 325 350

10-5

10-6

darkT

Temperature [K]Brea

kdow

n Vo

ltage

[V]

225 250 275 300 325 350

76

74

72

0.0

0.2

0.4

0.6

0.8

1.0

900 1100 1300 1500 1700Wavelength [nm]

Resp

onsi

vity

[A/W

]Voxtel SCM-APD Responsivity

Voxtel SCM-APD QE

0

20

40

60

80

100

42




M o d e l V F P1- E B Z B

Specifications




Bandwidth 4.0 GHz



.91

.73

1.01

.78

1.04

A/W

λ=1064nm

λ=1550nm


2.9

M=10

M=40

Noise Spectral Density @ M=10 .78 pA/Hz1/2

Dark Current @ M=1i 6.6 nA

Total Capacitanceii 35 pF


ΔVBR/ΔT 29 mV/K


Voltage and ∆V/Kiv0.48

0.50

-2.18 mV/K0.51 V


Input PowerV125 µW

i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M > 3i i i T= 2 9 8 K , I d a r k> 0 . 1 m Ai v S o u r c i n g 1 0 µ A , T = 2 9 8 Kv 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0

V F P -10 0 0 S e r i e s N e a r - I n f r a r e d S C M - A P D

3 0 µ m , 4 . 0 G H z

APDTEMP SENSE

E EB

C

1520 µm

ANODE

370 µm

CATHODECATHODE

43




M o d e l V F P1-J B Z B

Specifications




Bandwidth 2.3 2.7 GHz



.91

.73

1.01

.78

1.04

A/W

λ=1064nm

λ=1550nm


2.9

M=10

M=40





ΔVBR/ΔT 29 mV/K



0.50

-2.18 mV/K0.51 V


Input PowerV1 µW



75 µ m , 2 . 3 G H z

APDTEMP SENSE

E EB

C

1520 µm

ANODE

370 µm

CATHODECATHODE

44




M o d e l V F P1- N B Z B

Specifications







.91

.73

1.01

.78

1.04

A/W

λ=1064nm

λ=1550nm


2.9

M=10

M=40





ΔVBR/ΔT 29 mV/K



0.50

-2.18 mV/K0.51 V


Input PowerV5 µW



2 0 0 µ m , 3 5 0 M H z

APDTEMP SENSE

E EB

C

1520 µm

ANODE

370 µm

CATHODECATHODE

45

Ordering Information For VFP-1000 Series APD Products






If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to destroy itself. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.







V F P 1 - B Z B

Device Device Type Detector Diameter Package Window Revision

V=APD F=Linear mode P=Siletz 1=Single SCM APD Element

E=30µmJ=75µm

N=200µm

B=Ceramic Submount

Z=None

46


Photoreceiver Support Module

47

Electronics Support ModuleWX Series

Electronics Support Module (ESM) for Avalanche Photodiode (APD) ReceiversEases APD receiver system integration without a big price tag or time draw.

Voxtel designed the Electronics Support Module (ESM) for flexibility: The ESM allows users to operate Voxtel’s APD technology without performing electronics customization.

Voxtel’s WX series ESM can house any of Voxtel’s TO-8 packaged APD receivers or APD laser rangefinding (LRF) receivers. A 5V system power supply provides power to the APD, transimpedance amplifier (TIA) and thermo-electrical cooler (TEC), where applicable.1

• Flexible: Use the ESM as an optical receiver module (ORM) forprototyping capability.

• Cool: Faceplate provides a heat sink designed to cool Voxtel’s line ofthermoelectrically cooled APDs.

• Solid: Dissipative linings suppress high-frequency osscillations,especially with large-active-area, wide-bandwidth receivers.

Voxtel also offers:

• APD receiver support electronics boards. • Custom electronics design. • APD object relation mapping (ORM) for original equipment

manufacturers (OEMs).

Features Easy accomodat ion for temperature

changes using bias adjustmentcontrol

Dif ferent ia l output s ignalmonitor ing

Inspect, test, and character izat ionof APD receivers

Prototypic capabi l i ty when used asan opt ical receiver module (ORM).

Cool ing

Suppression of h igh-frequencyossic i l lat ions

Fields & Applications Protyping

Laser range f inding

Free-space opt ica l communicat ions

Opt ical t ime domain ref lectometry

Opt ical coherence tomography

Fluorescence measurements,spectroscopy, chromatography andelectrophoresis

Telecommunicat ions

LADAR/LIDAR

1 Different ESM models are available for TO-8 and TEC TO-8 packaged APDs. When ordered with a receiver, support modules are set to the appropriate voltage supply level for the receiver. APD bias can be adjusted using a potentiometer and monitored through a BNC connection on the back plate.

Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006

www.voxtel-inc.com, T 971.223.5646, F 503.296.2862 48

Electronics Support ModuleWX Series

Specifications

General

APD Mounting TO-8 mounted with brackets to socket on faceplate

Power Source AC-DC converter: 5V, 3A in (from 110V AC)

Grounding via power source and/or grounding plug

Internal current limit ~20 µA (Users who wish to change the voltage or current limit of their module may contact Voxtel for more information.)

Operating Temperature 300 K

TEC Cooling Temperature 275 K

Cooling Power (TSENSE V) 0.540 V

Inputs

V+ APD ADJ. APD Bias Control Input: Input from external potentiometer (not provided)

+ V IN 3A Voltage Input and Ground: 5V, 3A in (from 110V AC)

Outputs

AMPLIFIER OUT1 AC-coupled LVDS signals through (2) parallel capacitors:1) 2.2 μF; and 2) 100 pF; SMA connection to coaxial cable (not provided)

GND Ground

V+ APD MONITOR APD Bias Monitor: Output to 10-MΩ probe (not provided)

1 An optional low-pass filter can also be included at the module’s output.

Circuitry, Inputs and Outputs

TEC –

TEC +

APD-TIA Receiver (TO-8)

APD Receiver Support Module

APD Bias

APD Bias Monitor

APD Bias Control

5V, 3A in; GND

Out 1

Ground

Out 2

TSense+

TSense–

VCC +3.3V

+APD

Gnd

Out+Out–

Gnd

Gnd

RTIA Bias

TEC Control

(from 110 V AC)

+

+ .

+ 3

Electronic Electronics Support Module Block Diagram with Circuitry, Inputs and Outputs (TEC TO-8 package shown):

The receiver sends differential outputs to the ESM. These outputs from the receiver are passed through the support module to SMA connectors on the back

plate.

Mechanical

5.0005.500

0

.474

1.522

2.147

2.772

3.4603.847

2x Ø .281 Thru All

0 .380

.468

3.45

0

4.22

2

3.847

4x Ø .089 Thru All4–40 UNC –2B Thru All

User-available holes

2.08

9

.750 0

.750

2.08

9

1.166

1.181

4x Rubber Feet

1.1051.041

0

1.105

Voxtel Literature No. ESM for APD Receivers, 13Apr2018 ©

Voxtel makes no warranty or representation regarding its products’ specific

application suitability and may make changes to the products described without notice.

49

©Voxtel, Inc. 2016

Voxtel, Inc.

15985 NW Schendel Ave., #200 Beaverton, OR 97006 www.voxtel-inc.com

T: (971) 223-5646 F: (503) 296-2862

50

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