IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary ISOPLUS i4-PAC TM packaging. These modules provide unsurpassed thermal performance and temperature cycling capabilies making them ideal for applicaons ulizing power semiconductor devices that require heat sink grounding methods. These devices are also suitable for designers who seek isolated half-bridge configuraons integrated into one single package avoiding the use of mulple discrete devices thus promong crical board layout space savings. The ISOPLUS i4-PAC TM is a UL recognized isolated package incorporang a direct copper bond (DCB) ceramic isolator which provides 2500Vrms isolaon between die and heat sink. The i4-PAC TM yields as high as a 45% decrease in juncon to heat sink thermal resistance R(th)js, providing superior thermal performance over packages ulizing external mounted isolaon materials. These modules exhibit improved switching behavior due to low inducve current paths as dies are located within one package. An addional feature includes a reducon in EMI emissions due to the low coupling capacitance between die and heat sink. These half-bridge modules take full advantage of proven technology plaorms commonly implemented in both the IXYS’ Trench and Polar discrete MOSFET product families. These new modules are currently available in two configuraons. One configuraon (Part number prefix denoted as FMP) combines carefully selected P-Channel and N-Channel MOSFETs configured in a phase-leg or half-bridge topology with a common drain arrangement. An added benefit from this configuraon is the eliminaon of gate drive circuitry normally required in driving an N-Channel MOSFET on the high-side of a phase leg, resulng in a component count reducon, thus improving drive circuit simplicity, space savings, and over-all component cost. The other configuraon (Part number prefix denoted as FMM) is comprised of two N-Channel MOSFETs situated on both the low and high side of the phase leg. The Dual N-Channel FMM modules are capable of accommodang drain to source breakdown voltages of 75V, 150V, 200V, 250V, 500V and 600V with drain current values from 12 amperes to 120 amperes. The P&N FMP modules are available to support applicaons requiring drain to source breakdown voltages of -200V, -150V, and -100V with drain current rangs from -54 amperes to -17 amperes. A broad range of applicaons stands to benefit from these new half-bridge MOSFET modules. These applicaons include DC/AC motor drives, uninterrupble power supplies, switch mode power supplies, solar/wind power inverters, synchronous recfiers, industrial baery chargers, Class AB audio amplifiers and mul-phase DC to DC converters. JANUARY 2010 NEW PRODUCT BRIEF OVERVIEW IXYS INTRODUCES NEW ISOLATED PHASE LEG MODULES FEATURES Silicon chip on Direct-Copper Bond (DCB) substrate UL recognized package Isolated mounng surface 2500V electrical isolaon Avalanche rated Low drain-to-tab capacitance Low drain to ground capacitance Low package inductance High power density APPLICATIONS DC and AC motor drives Class AB audio amplifiers Mul-phase DC to DC converter Industrial baery chargers Switching-mode & resonant- mode power supplies DC choppers Uninterrupble power supplies Synchronous recfiers Solar and wind power inverters BENEFITS Low gate drive requirement Fast switching Easy to mount Space savings Efficiency Through Technology
Transcript
ISOPLUS i4-PACTM Half-Bridge MOSFET Modules
IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary
ISOPLUS i4-PACTM packaging. These modules provide unsurpassed thermal performance
and temperature cycling capabilities making them ideal for applications utilizing power
semiconductor devices that require heat sink grounding methods. These devices are also
suitable for designers who seek isolated half-bridge configurations integrated into one
single package avoiding the use of multiple discrete devices thus promoting critical board
layout space savings.
The ISOPLUS i4-PACTM is a UL recognized isolated package incorporating a direct copper
bond (DCB) ceramic isolator which provides 2500Vrms isolation between die and heat
sink. The i4-PACTM yields as high as a 45% decrease in junction to heat sink thermal
resistance R(th)js, providing superior thermal performance over packages utilizing external
mounted isolation materials. These modules exhibit improved switching behavior due to
low inductive current paths as dies are located within one package. An additional feature
includes a reduction in EMI emissions due to the low coupling capacitance between
die and heat sink. These half-bridge modules take full advantage of proven technology
platforms commonly implemented in both the IXYS’ Trench and Polar discrete MOSFET
product families.
These new modules are currently available in two configurations. One configuration (Part
number prefix denoted as FMP) combines carefully selected P-Channel and N-Channel
MOSFETs configured in a phase-leg or half-bridge topology with a common drain
arrangement. An added benefit from this configuration is the elimination of gate drive
circuitry normally required in driving an N-Channel MOSFET on the high-side of a phase
leg, resulting in a component count reduction, thus improving drive circuit simplicity,
space savings, and over-all component cost. The other configuration (Part number prefix
denoted as FMM) is comprised of two N-Channel MOSFETs situated on both the low and
high side of the phase leg.
The Dual N-Channel FMM modules are capable of accommodating drain to source
breakdown voltages of 75V, 150V, 200V, 250V, 500V and 600V with drain current values
from 12 amperes to 120 amperes. The P&N FMP modules are available to support
applications requiring drain to source breakdown voltages of -200V, -150V, and -100V with
drain current ratings from -54 amperes to -17 amperes.
A broad range of applications stands to benefit from these new half-bridge MOSFET
modules. These applications include DC/AC motor drives, uninterruptible power supplies,
switch mode power supplies, solar/wind power inverters, synchronous rectifiers, industrial
battery chargers, Class AB audio amplifiers and multi-phase DC to DC converters.
january 2010
n E W P r O D u C T B r I E F
OVErVIEW
IXyS InTrODuCES nEW ISOlaTED PhaSE lEg mODulES
FEaTurESSilicon chip on Direct-Copper �Bond (DCB) substrate
UL recognized package �Isolated mounting surface �2500V electrical isolation �
Avalanche rated �Low drain-to-tab capacitance �Low drain to ground capacitance �Low package inductance �High power density �
aPPlICaTIOnSDC and AC motor drives � Class AB audio amplifiers � Multi-phase DC to DC converter � Industrial battery chargers � Switching-mode & resonant- �mode power supplies DC choppers � Uninterruptible power supplies � Synchronous rectifiers � Solar and wind power inverters �
BEnEFITS Low gate drive requirement � Fast switching � Easy to mount � Space savings �
POWEREfficiency Through Technology
www.ixys.com
ISOPluS i4-PaCTm half-Bridge mOSFET Summary Table
Application Circuits
ISOPluSTm Packages with Internal Alumina DCB Isolation*
EmIFilter
BridgeRectifier
BoostPFC
Control and Gate Drive Circuitry
Q1
D1 C1
L1Buck
Full-Bridge
Xenon
Igniter
ConverterInverter
Lamp
Control Unitand
Gate Drive
VinVoutC1
T1 D1
D2
C3
L1
Load
Gate Drive IC
Dz Rz
Rh1 Rh2
Dh
Ch
D1
Rl1In
Rl2
Bond wires
Leads
Copper Copper SolderCeramic
DCB
ChipMould
Fmm1 Fmm2
FmP1
Fmm1 Fmm2
Full-Bridge DC to DC Converter
FMP Single Gate Drive Circuit
The figure above exhibits a FMP half-bridge MOSFET Module (Combines
a P-Channel and N-Channel MOSFET in a half-bridge, common drain
configuration) driven by only one gate drive IC. The principle benefit from
this configuration is the elimination of gate drive circuitry normally required
in driving an N-channel MOSFET on the high side of a phase leg, resulting in
a component count reduction, thus improving drive circuit simplicity, space
savings, and over-all cost.
The figure above depicts a general full-bridge power converter.
IXYS FMM and FMP MOSFET Modules are ideally suited for use
in many DC to DC converter topologies. A pair of FMM MOSFET
Modules are utilized to drive the primary side of transformer T1.
D1 and D2 diodes provide for rectification and to serve as “free-
wheeling diodes” on the secondary side of T1 before entering a
low pass filter.
General HID Lamp Ballast Diagram
The figure on the left depicts a basic high intensity discharge (HID) lamp ballast diagram,
suitable for general outdoor applications. A pair of FMM MOSFET Modules (FMM1 and
FMM2) are employed in a full-bridge configuration at the output stage of this general HID
ballast diagram. This lamp ballast performs five basic operations. AC mains enters an EMI
filter to block ballast-generated noise. The AC input voltage is then processed in to a DC
value via a bridge rectifier. This DC value enters a power-factor-correction (PFC) stage to
ensure a sinusoidal input current. A buck converter stage controls HID lamp ballast current
before entering the output stage which is comprised of a full-bridge circuit used for driving
the HID lamp.
Package AdvantagesProvides 2500V, UL recognized isolation with superior thermal performance (E153432).• Improves termperature and power cycling capability.• Cost effective clip mounting.•
* Patent No. 6,404,065; 6,404,065; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734* For information regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf
The figure on the right illustrates an ISOPLUSTM 247 cross section. ISOPLUSTM
package provides improved creepage distance to simplify compliance
with regulatory high-voltage spacing requirements. The copper-bonded,
isolated ceramic substrate enhances overall device reliability by greatly
improving thermal and power cycling, and the isolated backside simplifies
mounting while yielding superior thermal impedance. The molding epoxies
utilized meet the UL 94V-0 flammability classification.
Backed up with multiple U.S. Patents and UL recognition, the ISOPLUSTM
