Positive Chemically Amplified Photoresist for Etch ... · 6.67um 4.83um 5.55um 4.87um 4.89um. AZ,...

The information contained herein is, as far as we are aware, true and accurate. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular purpose or of any other nature are hereby made in respect of the information contained in this presentation or the product or products which are the subject of it. In providing this material, no license or other rights, whether express or implied, are given with respect to any existing or pending patent, patent application, trademarks, or other intellectual property right.

AZ® EXP 12XT-20PL Series

Positive Chemically Amplified Photoresistfor Etch, Implant, and Plating Applications

Data at 5 to 15µm Film Thickness

AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

2

MEMS /Ink Jet

FT: >30 µm

Lift-off TSV / EtchImplant

Copper/UBMPlating

Gold Plating Solder /Metal Plating

FT: 2-10 µm FT: 3-15 µm FT: 5-30 µm FT: 10-30 µm FT: >30 µm

DUVTFRH/ImplantFT: 3 - 8 µm

AZ’s Thick Film Photoresist Roadmap

<<------------------ AZAZ® EXP 100 EXP 100 ---------------->>

Materials under development

AZ® LExp 600

<---AZ® 12XT Series--><------------------------- AZ® 125nXT Series -------------------------->

Materials in sampling(all EXP products)

Commercialized materials

AZ® nLOFSeries

<------------------------- P4620 ----------------------->

AZ® N4000

AZ® TX 1311VS-01HJ<------------ AZ® 9200 ------------> AZ®

PLP30/PLP40

<----------- AZ® 50XT ---------->

<---AZ® 5nXT/15nXT--->

<---------AZ® 40XT-11D-------->

<------------ AZ® 10XT ------------>

AZ® EXP TXVS-02HJ

AZ® 4562

Red=Neg, Blue =Pos; nLOF, N4000,,5nXT, 15nXT, 12XT, 40XT = chemically amplified; 125nXT = photopolymer; 10XT, 9200, P4620, PLP, 50XT = DNQ


3

AZ® Electronic Materials Thick Photoresist Product Summary

Platform: DNQ = Novolak, CA = Chemically Amplified, PP = Photopolymer

Wavelength: Red font indicates better performance.

Developer Compatibility: Bold font indicates most compatible developer, resulting in shorter develop times and lower exposure energies.

Thick Film Product Platform λ

FT Range (um)

Maximum Single coat

Aspect Ratio Application Developer

Compatibility

P4000 Series DNQ g-h 2 - 55 25 2:1 Solder, Cu, Au 400K / TMAH4500 Series DNQ g-h 2 - 55 25 2:1 Solder, Cu, Au 400K / TMAH9200 Series DNQ g-h -i 3 - 50 25 3:1 Solder, Cu, Au 400K / TMAH

10XT DNQ g-h -i 4 - 50 25 3:1 Solder, Cu, Au 400K / TMAH50XT DNQ g-h 15 - 65 65 3:1 Solder, Cu, Etch 400K

PLP-30 DNQ g-h 6 - 25 25 2:1 Au, Cu 303NPLP-40 DNQ g-h 20 - 30 30 2:1 Au, Cu 303N

12XT Series CA g-h-i 5 - 20 20 4:1 Si, Cu, Au, TSV TMAH40XT Series CA g-h-i 20 - 100 60 4:1 Etch, Solder, Cu TMAH / 400K

125nXT Series PP g-h-i 20 - 120 120 6:1 Cu, Au, Solder TMAH / 303N5nXT/15nXT CA g-h-i 5 - 20 20 3:1 Cu, TSV Etch TMAH

TX 1311 CA DUV 3 - 5 5 15:1 Cu, NiFe, Si TMAH


4

Three versions to cover various film thickness; -05, -10, -15Chemically Amplified PlatformOutstanding Throughput:

Superior PhotospeedShort Develop Times

Can be used on i-line steppers & aligners (with i-line λ)Compatible to many substrates; Si, Cu, AuCompatible to many plating solutions; Cu Ni, AuIdeal for TSV applications, DRIE processesVery good implant resistanceVery good aspect ratios; allows for thicker coatings for moredifficult etch and implant processes, without compromise onthroughput.Strips in standard processes

AZ® EXP 12XT-20PL SeriesFeatures and Summary


5

AZ® EXP 12XT-20PL SeriesOptical Parameters

n & k for 12XT-20PL-05

-0.5

0

0.5

1

1.5

2

2.5

0 200 400 600 800 1000 1200 1400

wavelength (nm)

nk

n, k value @ 350~450nm & 633nm

λ n k351.773 1.6495 0.0046102000455.046 1.6057 0.0019772000627.848 1.5762 0.0000000000

A = 736.54a = 1.535b = 0.019251c = -0.001122


6

AZ® EXP 12XT-20PL-05Spin Speed Curve

Spin curve for 12XT-20PL- 05, batch 2518-98 B

234567

500 1000 1500 2000 2500 3000 3500

Spin speed, rpm

Film

thic

knes

s, µ

2518-98 B


7


Optitrac coat and BakeHand dispense on 150 mm siliconSpin 1000-4000 rpm for 30 secSB: 110°C/ 180 sec Contact

5

6

7

8

9

10

11

12

13

14

15

1000 1500 2000 2500 3000 3500 4000

Spin Speed (rpm)

Film

Thi

ckne

ss (µ

m)


8


Optitrac coat and BakeHand dispense on 150 mm siliconSpin 1000-4000 rpm for 30 secSB: 110°C/ 240 sec Contact

8

10

12

14

16

18

20

22

24

26

1000 1500 2000 2500 3000 3500 4000

Spin Speed (rpm)

Film

Thi

ckne

ss (µ

m)


9

Substrate: 150mm SiliconFilm Thickness: 5 µm, static dispenseSoftbake: 110°C / 120sec, contactExposure: i-line stepper, NA=0.48 and Σ=0.55Post Exposure Bake: 90°C / 60 sec, contactDevelop: 2 x 30 sec puddle in AZ 300 MIF (.26N) @23°C

AZ® EXP 12XT-20PL-05 Process Conditions


10

10µm 5µm

2.6µm2.2µm

4µm

3µm

8µm

Dose To Print = 120mJ/cm2

FT = 5µm, Silicon

AZ® EXP 12XT-20PL-05 Linearity Comparison


11

CD = 5µm

-1.0µm

-0.5µm

0.0µm

0.5µm

1.0µm

1.5µm

2.0µm

2.5µm

3.0µm

CD = 2.6µm

-1.0µm

-0.5µm

0.0µm

0.5µm

1.0µm

1.5µm

2.0µm

2.5µm

3.0µm

Dose To Print = 120mJ/cm2

FT = 5µm, Silicon

AZ® EXP 12XT-20PL-05 Depth of Focus


12

80mJ/cm2

90mJ/cm2

100mJ/cm2

110mJ/cm2

120mJ/cm2

130mJ/cm2

140mJ/cm2

150mJ/cm2

160mJ/cm2

170mJ/cm2

180mJ/cm2

AZ® EXP 12XT-20PL-05 Exposure Latitude

Focus = =1.0µmFT = 5µm, Silicon


13

Sample: Lot 2518-80Substrate: 150mm Silicon, Copper, and GoldFilm Thickness: 10µmSoftbake: 110°C/180sec, contactExposure: i-line stepper, NA=0.48 and Σ=0.55Post Exposure Bake: 90°C/ 60 sec, contactDevelop: 2 x 60 sec puddle in AZ 300 MIF (.26N) @23°C

AZ® EXP 12XT-20PL-10 Process Conditions


14

AZ® EXP 12XT-20PL-10 Linearity / Resolution

Dose to Print 110 mJ/cm²Silicon SubstrateFocus = + 5µm

10 µm(9.92 um)

5 µm(4.85 um)

8 µm(7.93 um)

3 µm(3.07 um)

4 µm(3.90 um)

2.2 µm(2.50 um)

2.4 µm(2.60 um)


15


Linearity @ 110mJ/cm2, +5 focus

0

2

4

6

8

10

12

0 2 4 6 8 10 12

Measured Resist lines (um)

Mas

k no

min

al C

D (u

m)

Resist CD

Dose to Print 110 mJ/cm²Silicon SubstrateFocus = + 5µm


16

AZ® EXP 12XT-20PL-10 Exposure Latitude

Mask CD = 10µm Mask CD = 5µm

100 mJ/cm² CD = 11.08 um

Dose to Print 110 mJ/cm²Silicon Substrate

Focus = + 5µm

110 mJ/cm² CD = 9.84 um

120 mJ/cm² CD = 9.28 um 120 mJ/cm² CD = 4.40 um

110 mJ/cm² CD = 4.88 um

100 mJ/cm² CD = 5.20 um


17

3

4

1

0

-1

6

2

7

5

AZ® EXP 12XT-20PL-10 Depth of FocusMask CD = 10µm Mask CD = 5µmMeasured

CDMeasured

CD


3

4

1

0

-1

6

2

7

5

10.00um

9.86um

10.73um

10.93um

11.10um

9.86um

10.43um

9.86um

9.86um

5.22um

5.05um

5.87um

6.44um

6.67um

4.83um

5.55um

4.87um

4.89um


18

AZ® EXP 12XT-20PL-10 Depth of Focus

CD DOF @ 110 mJ/cm2

0

2

46

8

10

12

-2 -1 0 1 2 3 4 5 6 7 8

Focus (um)

CD

(um

)

10 um5 um



19


Dose to Print = variousCopper SubstrateFocus = + 2µm

5 µm

10 µ

5 µ

8 µ

2.2 µ

2 µ

200 mJ/cm² 250 mJ/cm² 300 mJ/cm²

10 µ 8 µ

3 µ

10 µ

5 µ

8 µ

3 µ

5 µ


20

3um

0

2um

AZ® EXP 12XT-20PL-10 Depth of Focus for Mask CD = 10µm

Focus = variousCopper SubstrateDose to Print = 200mJ/cm2

10µ FT

1um0um-1um

4um5um6um7um


21

3um

4um

1um

0um

-1um

6um

2um

7um

5um

250 mJ/cm² 300 mJ/cm²

AZ® EXP 12XT-20PL-10 Depth of Focus for Mask CD = 10µm

Focus = variousCopper SubstrateDose to Print = 250mJ/cm2

300mJ/cm2

10µ FT

Data for 3-6um Focus was Not available.


22

150 mJ/cm² 200 mJ/cm²

10 µm

5 µm

8 µm

3 µm


Dose to Print = variousGold SubstrateFocus = + 2µm

10 µm

5 µm

8 µm


23

3

4

1

0

-1

6

2

7

5

200 mJ/cm²150 mJ/cm²AZ® EXP 12XT-20PL-10

Depth of Focus for Mask CD = 10µm

Focus = variousGold SubstrateDose to Print = 150mJ/cm2

200mJ/cm2

10µ FT


24

AZ® EXP 12XT-20PL-15Process Conditions (Lot 2518-119S5)

Substrate: 150mm SiliconFilm Thickness: 15 µm; static dispenseSoftbake: 110°C / 240sec, contactExposure: i-line stepper, conventional illumination

NA=0.48 and Σ=0.55Post Exposure Bake: 90°C/ 60 sec, contactDevelop: 2 x 60 sec puddle in AZ 300 MIF (.26N) @23°C


25

AZ® EXP 12XT-20PL-15Performance Summary on Silicon

Features (1:1)

Film

Thickness(μm)

DTP (mJ/cm²)

Exposure Latitude

(%)

DOF (μm)

Linearity (μm)

10.0 μm Dense Lines

15.0

286

46

7

2.8

7.0 μm Dense Lines

15.0

316

39

8


26

Film Thickness: 15.0 µmOptitrac coat and BakeSB: 110°C/ 240 sec ContactASML 0.48 NA 0.55 σ i-LinePEB: 90°C/ 60 sec ContactAZ 300 MIF 2 X 60 sec spray puddle @ 23 °C

AZ® EXP 12XT-20PL-15Exposure Latitude on Silicon; FT=15.0 μm; 10.0 μm L/S

Exposure Dose (mj/cm²)

Mea

sure

d Li

new

idth

(µm

)

8

8.5

9

9.5

10

10.5

11

11.5

12

210 225 240 255 270 285 300 315 330 345 360 375 390 405

286 mj/cm²46% Exposure Latitude


27

285 mJ/cm²


330 mJ/cm²

300 mJ/cm²


255 mJ/cm² 270 mJ/cm²240 mJ/cm²

315 mJ/cm²345 mJ/cm²360 mJ/cm²375 mJ/cm²


28



Exposure Dose (mj/cm²)

Mea

sure

d Li

new

idth

(µm

)

5.5

6

6.5

7

7.5

8

210 225 240 255 270 285 300 315 330 345 360 375 390 405

8.5

316 mj/cm²39% Exposure Latitude


29

300 mJ/cm²


345 mJ/cm²

315 mJ/cm²


270 mJ/cm² 285 mJ/cm²255 mJ/cm²

330 mJ/cm²360 mJ/cm²375 mJ/cm²


30

8.40

8.80

9.20

9.60

10.00

10.40

10.80

11.20

11.60

0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00

Focus (µm)

Mea

sure

d Li

new

idth

(µm

)AZ® EXP 12XT-20PL-15

Depth of Focus on Silicon; FT=15.0 μm; 10.0 µm L/S


DTP = 285 mj/cm²


31

AZ® EXP 12XT-20PL-15Depth of Focus on Silicon; FT=15.0 μm; 10.0 µm L/S

2.0 µm 3.0µm 4.0 µm


8.0 µm 7.0 µm 6.0 µm9.0 µm

5.0 µm

1.0 µm

DTP = 285 mj/cm²


32

5.80

6.20

6.60

7.00

7.40

7.80

8.20

0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00

Focus (µm)

Mea

sure

d Li

new

idth

(µm

)AZ® EXP 12XT-20PL-15

Depth of Focus on Silicon; FT=15.0 μm; 7.0 µm L/S


DTP = 315 mj/cm²


33

AZ® EXP 12XT-20PL-15Depth of Focus on Silicon; FT=15.0 μm; 7.0 µm L/S

2.0 µm 3.0µm 4.0 µm


8.0 µm 7.0 µm 6.0 µm9.0 µm

5.0 µm

1.0 µm

DTP = 315 mj/cm²


34

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Nominal Linewidth (µm)

Mea

sure

d Li

new

idth

(µm

)


DTP = 285 mj/cm²

AZ® EXP 12XT-20PL-15Linearity on Silicon; FT=15.0 μm, L/S


35

AZ® EXP 12XT-20PL-15Linearity on Silicon; FT=15.0 μm, L/S

8.0 µm 7.0 µm 5.0 µm 4.0 µm


2.8 µm 3.0 µm 3.2 µm2.6 µm2.4 µm

3.4 µm

10.0 µm

DTP = 285 mj/cm²


36

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Nominal Linewidth (µm)

Mea

sure

d Li

new

idth

(µm

)


DTP = 315 mj/cm²

AZ® EXP 12XT-20PL-15Linearity on Silicon; FT=15.0 μm, Contact Holes


37

AZ® EXP 12XT-20PL-15Linearity on Silicon; FT=15.0 μm, Contact Holes

5.0 µm 4.5 µm 4.0 µm 3.8 µm


2.8 µm 3.0 µm 3.4 µm

3.6 µm

2.6 µm

DTP = 315 mj/cm²

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Positive Chemically Amplified Photoresist for Etch ... · 6.67um 4.83um 5.55um 4.87um 4.89um. AZ,...

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