EE-463 STATIC POWER CONVERSION-I
Power Semiconductor DevicesOzan Keysan
keysan.me
O�ce: C-113 • Tel: 210 7586
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Diode
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Power Diode (>50 A)
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Ideal Diode
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Ideal DiodeV-I Characteristics
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Ideal DiodeV-I Characteristics
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Practical DiodeImportant Parameters
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Practical DiodeImportant Parameters
Forward Voltage
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Practical DiodeImportant Parameters
Forward Voltage
Reverse Break-down Voltage
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Practical DiodeImportant Parameters
Forward Voltage
Reverse Break-down Voltage
On-resistance
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Practical DiodeImportant Parameters
Forward Voltage
Reverse Break-down Voltage
On-resistance
Turn-on, turn-o� times (forward, reverse-recovery)
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Practical Diode: V-I Characteristics
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A few Data-sheetsSTTH6012, 1200V, 60A Diode
FERD20S100S, 100V, 20 A Diode
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Reverse Biased Diode
More info
Er�ksson, Fundamentals of Power Electron�cs, Ch4 9 / 53
Forward Biased Diode
More info
Er�ksson, Fundamentals of Power Electron�cs, Ch4 10 / 53
Diode Switching WaveformsTurn-on transient
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Diode Switching WaveformsTurn-o� transient
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Diode Switching WaveformsTurn-o� transient
Reverse current is required to remove carrier charges13 / 53
Reverse RecoveryDiode conducts a reverse current during turn-o�
: Reverse recovery time, : Reverse recovery currenttrr Irr 14 / 53
Reverse Recovery
Softness Factor
Reverse recovery
Fast diode vs Slow Diode15 / 53
Types of Power Diodes
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Types of Power DiodesStandard Recovery
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Types of Power DiodesStandard Recovery
Fast (ultra-fast) Recovery
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Types of Power DiodesStandard Recovery
Fast (ultra-fast) Recovery
Schottky Diode
Majority carrier (due to metal layer)
No recovered charge,
Limited to low voltage (<100V)
= 0trr
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Types of Power Diodes
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Types of Power Diodes
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Types of Power Diodes
What is the relation between and ?Vmax VF 17 / 53
Losses
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Losses
Conduction Losses
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Losses
Conduction LossesIncreases with current
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Losses
Conduction LossesIncreases with current
Switching Losses
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Losses
Conduction LossesIncreases with current
Switching LossesIncreases with turn-on, turn-o�-time
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Losses
Conduction LossesIncreases with current
Switching LossesIncreases with turn-on, turn-o�-time
Increases with switching frequency
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Switching LossesLinearized
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LossesExtra Reading Material
Fast, Faster, Fastest
Power Losses, Thermal Considerations
Calculation of conduction losses in a power recti�er
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Thyristor
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Thyristor
A diode with a gate terminal!
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Thyristor
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Thyristor
Four layer PNPN semiconductor (and two-transistorequivalent circuit)
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Thyristor
A diode that you can delay on-state with gatesignal(pulse)
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Thyristor
A diode that you can delay on-state with gatesignal(pulse)
but no control while turning-o�
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Thyristor
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Thyristor
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Thyristor: Controlled Recti�er
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Thyristor: Controlled Recti�er
More on thyristor recti�ers next week!26 / 53
Thyristor
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ThyristorHas the highest current and voltage rating among other devices
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ThyristorHas the highest current and voltage rating among other devices
Slow switching device (eg compared to MOSFET)
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ThyristorHas the highest current and voltage rating among other devices
Slow switching device (eg compared to MOSFET)
Latching switch (can be turned on by Ig, but cannot be turned o� )
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ThyristorV-I Characteristics
Reverse Blocking
Forward Blocking
Forward Conducting
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V-I Characteristics
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V-I Characteristics
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Types of Thyristors
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Types of ThyristorsSCR (Silicon Controlled Recti�er)
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Types of ThyristorsSCR (Silicon Controlled Recti�er)
TRIAC, DIAC
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Types of ThyristorsSCR (Silicon Controlled Recti�er)
TRIAC, DIAC
GTO (Gate Turn-O� Tyhristor)
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GTOs
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GTOs
4500 V, 3000 A GTO
Used at very high power levels33 / 53
GTOsFully contrallable switch
Can be turned-on and turned-o�
Turn-on achieved by positive current pulse
Turn-o� achieved by negative current pulse
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Types of ThyristorsTRIAC
Bi-directional device
TRIACs can be triggered by positive or negativecurrent
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Types of ThyristorsTRIAC: Two anti-parallel thyristors
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Datasheet Exercise50 A - 1200 V automotive grade SCR Thyristor
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MOSFET
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MOSFETMetal-Oxide Semiconductor Field-E�ect Transistor
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MOSFETMetal-Oxide Semiconductor Field-E�ect Transistor
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MOSFET
n+ n+
p
x
L
Source DrainGate
Body
Oxide
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MOSFETV-I Characteristics
To be discussed more in detail throughout the semester 40 / 53
Equivalent Circuit
Cgs: large, constant
Cgd: small, highly nonlinear
Cds: intermediate, nonlinear42 / 53
MOSFET Comparison
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MOSFET
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MOSFET
Fast device (ten to hundreds kHz)
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MOSFET
Fast device (ten to hundreds kHz)
Easy to drive
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MOSFET
Fast device (ten to hundreds kHz)
Easy to drive
Blocking voltage is usually <500 V
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MOSFET
Fast device (ten to hundreds kHz)
Easy to drive
Blocking voltage is usually <500 V
Positive Temperature coe�cient (easy to parallel)
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MOSFET
Fast device (ten to hundreds kHz)
Easy to drive
Blocking voltage is usually <500 V
Positive Temperature coe�cient (easy to parallel)
Body diode can conduct the full rated current (but usually slow)
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MOSFET
Fast device (ten to hundreds kHz)
Easy to drive
Blocking voltage is usually <500 V
Positive Temperature coe�cient (easy to parallel)
Body diode can conduct the full rated current (but usually slow)
Switching time determined by charging/discharging gatecapacitors
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IGBT
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IGBTInsulated-Gate Bipolar Transistor
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IGBTInsulated-Gate Bipolar Transistor
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IGBT
IGBT
IGBT, when to use them?
IGBT or MOSFET? 46 / 53
IGBT
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IGBTSlower compared to MOSFET (<20-30kHz)
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IGBTSlower compared to MOSFET (<20-30kHz)
Lower on-resistance
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IGBTSlower compared to MOSFET (<20-30kHz)
Lower on-resistance
Can withstand higher voltages (upto 1700V)
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IGBTSlower compared to MOSFET (<20-30kHz)
Lower on-resistance
Can withstand higher voltages (upto 1700V)
Possible to parallel for new generations
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IGBTSlower compared to MOSFET (<20-30kHz)
Lower on-resistance
Can withstand higher voltages (upto 1700V)
Possible to parallel for new generations
Probably best choice for 500-1700V, kWs ofapplications
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IGBT Comparison
To be discussed more in detail throughout the semester
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Data-Sheet ExerciseIGBT, H series 1200 V, 40 A high speed
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Some New Transistor Technologies
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Some New Transistor Technologies
GaN
Advancing power supply solutions through the promise of GaN
Power GaN Opens New Applications50 / 53
Some New Transistor Technologies
SiC
Next Generation Power Semiconductors: What is GaN / SiC?
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Some New Transistor Technologies
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