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Power Supplies on a Chip (PSOC)

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1 Power Supplies on a Chip (PSOC)
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1

Power Supplies on a Chip (PSOC)

2

Computer and Telecom Industries

POL for ITIndustries

Network

Server

Telecom

LaptopDesktop

3

10-phase

VR for CPU

4-phase VR

for Chipset

VR for Memory

VR

VRVR

Server

Around 30% real estate of motherboard is occupied by VR

Present Server Motherboard with High Current

POL (Voltage Regulator)

CPU

CPU

4

current

Power

density

W/in3

100

500

700

1A 20A10A

300

Integrated

POL

Capsulated

POL

Discrete POL

40A

Power Density of Today’s POL Modules

Research Objective

High density, High current

integrated POL module

5

Cross-section view

Different Technologies for Integrated POL

1A

6AInductor

Power IC

6

Inductor substrate

Driver

Inductor Io(max)>15A

3D Integration for High Current Applications

Active layer

Active devices

3D Integrated Converter

3D integration can save footprint and fully utilize space.

7

In-package decoupling Caps

Active Layer Using “Flip-MOS Pair”

Top

MOSFET

(bare die)Substrate

(Maxwell Q3D)

Embedding the devices allows for smallest loop inductance

Drain

Bottom

MOSFET

(bare die)

L_loop =0.82 nH !

Direct-bond-copper (DBC) is used to build this active layer

8

Advantage of DBC Active Layer

Tmax = 158°C

Tavg = 96.8°C

AlN DBC has ~6x greater thermal conductivity than 4-layer PCB

Tmax = 94.1°C

Tavg = 91.0°C

PCB AlN DBC

Embedded

bare die

CPES Proprietary 9

LTCC Low Profile Inductor Substrate

Stack Multi-layer

LTCC tapesPress

Sintering

Cut holes by laser

Screen print the holes

with silver paste

Very Simple

Fabrication Process

10

L1

Vin Vo

R

i1

i2L2

Integrated Coupled Inductor for two-phase Buck converter

Two-phase POL With non-coupled inductor Inductor is too large

Inverse coupling can reduce Inductor footprint.

Lself

Vin Vo

R

M

i1

i2 Lself

Inverse coupled inductor

Cancel DC flux

Footprint 52%

reduction

11

current

Power

density

W/in3

100

500

700

1A 20A10A

300

Integrated

POL

Capsulated

POL

Discrete POL

40A

Two-phase POL with

couple inductor 1.5MHz

Single-phase POL

1.5MHz

Power Density of POL Converters--- CPES Prototypes

12

High Frequency Magnetics Material

*Courtesy from UD

13

Lateral-Trench

MOSFET

100kHz 1MHz

Trench MOSFET

Current

100MHz

VDMOS

30A

40A

Lateral MOSFET

Semiconductor Device Technologies

10MHz

GaN based HEMT

10A

20A

14

Objective for ARPA-E Project

High Switching Frequency (2 ~ 5 MHz)

High Power Density ( > 1000 W/in3)

High Efficiency ( 88%)

Three-dimensional Integration

IR Generation 1.1 GaN Device

New Magnetic Material

15

current

Power

density

W/in3

100

500

700

1A 20A10A

300

Integrated

POL

Capsulated

POL

Discrete POL

40A

Two-phase POL with

couple inductor 1.5MHz

Single-phase POL

1.5MHz

Power Density of POL Converters--- CPES high frequency POL with GaN device

2~5 MHz

16

Team Members & Roles

Gen 1.1 GaN Device

Development

High Frequency Drive

IC Development

Integrated GaN Module

Development

Supporting VT for

Reliability Assessment

FeNC Magnetic Material

Development

NiZn Sheet Material

Development

FeNC and NiZn Magnetic

Material Characterization

Magnetic Substrate

Fabrication

Magnetic Material

Performance Optimization

GaN Device Loss

Modeling

Magnetic Loss Modeling

Topologies Evaluation

LTCC Characterization

3D Integration Design

Thermal Management

Prototype Design

Testing and Evaluation


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