PROCESS CHANGE NOTIFICATION
Dear Customers,
We thank you for your support and corporation.
Because we change a manufacturing facility and the materials from Oita to Iwate for NANO-Flash
product, I notify you of this.
We are producing this product in Oita factory, however we will produce it in Iwate factory from now on
since we should be provided the dual fabrication to improve our supply service.
If you have any questions, please feel free to contact us.
We would appreciate your support and cooperation.
1. Affected product
- NANO-Flash product.
2. Contents of change point
Item <Present> <Future>
Wafer manufacture location (Oita) (Iwate)
Bonding wire Au wire Cu wire
(Oita) :Toshiba Corp. Oita factory
(Iwate) :Iwate Toshiba electronics Co., Ltd.
-There is no change the quality between two locations.
3. Reason of the change
- Promotion of BCP (Dual-fabrication).
4. Schedule
-Change plan: Dec, 2014.
- We will be shipped Iwate products to you as soon as you has been approved this inform.
YOUR UNDERSTANDING WILL BE HIGHLY APPRECIATED.
SINCERELY YOURS,
HIROTAKA WATANABE
MANAGER
QUALITY ASSURANCE SECTION
IWATE TOSHIBA ELECTRONICS CO., LTD.
Aug 25, 2014
PCN#:14CN-026 IWATE TOSHIBA ELECTRONICS CO., LTD. 6-6 KITA-KOGYO-DANCHI, KITAKAMI, IWATE 024-8510 JAPAN PHONE:+81-197-71-3050, FAX:+81-197-66-5293
IWATE TOSHIBA ELECTRONICS CO.,LTD.
Change of wafer manufacture location and
Cu wire of NANO-Flash product.
Affected products: NANO-Flash product.
Date :Aug 25 2014
PCN# :14CN-026
QUALITY ASSURANCE SECTION
IWATE TOSHIBA ELECTRONICS CO.,LTD.
2 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Explanatory material of wafer manufacture
location of NANO-Flash product.
3 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Announcement about the wafer production place and Cu wire
Regarding the affected NANO-Flash products, although these products have been
produced at TOSHIBA Corporation Semiconductor & Storage Products Company OITA
Operations, these products will be developed to Iwate Toshiba electronics Co., Ltd.
By this dual fabrication, reduction of production risk and a stable supply can be
implemented.
Also, we will carry out about development of "Cu Wire" that is also developed on the Oita
factory product.
<The point to be checked for the deployment to Iwate Toshiba>
1. Process check
We have confirmed that Iwate Toshiba product has same electrical characteristic and
reliability compared with OITA Operations product, by using test chip.
2. Trial production and evaluation of product
We have confirmed that the characteristic and reliability are same as OITA Operations
product.
4 IWATE TOSHIBA ELECTRONICS CO.,LTD.
5M1E OITA Operations 8inch Iwate Toshiba 8inch
Man Operator is different, but control is done by same education
system, based on our certification of education for operator.
Machine Same level machine Is used
Measurement Periodical calibration and correlativity were checked.
Method process Tuning has been done for same device characteristics and
product characteristics.
Material
Wafer material Same wafer material is used
Metal wiring Same film structure
interlayer Same film structure
Equipment Cleanliness level SMIF(Inside class : Lower than 1)
System Quality system and a production system are equal.
Regarding Iwate Toshiba 8inch, products are manufactured by production
line that has production history with 0.13um generation products.
Summary of change point related to wafer
5 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Iwate product development evaluation contents 1
Nch Vth[V]
Nch
Idr[
μA
/μm
]
Pch Vth[V] P
ch
Idr[
μA
/μm
]
Nch Tr. Vth-Idr Characteristic Pch Tr. Vth-Idr Characteristic
Characteristic spec line
■ Iwate n= 47p
○ OITA n= 470p
Compared the product of Iwate with a product of Oita and confirmed that
it was equal for a characteristic.
6 IWATE TOSHIBA ELECTRONICS CO.,LTD.
We confirmed that there is no problem on product reliability.
Test item Test condition QTY Result
HTCB
High temp. Clock bias test
Ta=125 deg.C 1000h
VDD/VCC=Operation max
32pcs * 3Lot 96/96 OK
HTS
High temp. Storage
Ta=150 deg.C
1000h
32pcs * 3Lot 96/96 OK
Iwate product development evaluation contents 2
7 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Explanation of becoming it Cu Wire
8 IWATE TOSHIBA ELECTRONICS CO.,LTD.
[1] Change Overview (Characteristic comparison)
[2] Description of Change
[3] Conceptual Drawing of Change Point
[4] Risk Analysis for Change
[5] Basic Evaluation Data for Change Risk
[6] Verification of Electrical Characteristic
[7] Reliability Test Result
[8] Identification Method of Modified Product
[9] Changeover Schedule
Contents
9 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Item Au Superiority Cu
Resistivity @100degC 2.88uohm-cm < 2.23umohm-cm
Coefficient of thermal
conductivity (@ 100degC)
313W/m・K < 395W/m・K
Young’s modulus 78GPa < 130GPa
Pull strength 200~250MPa < 280~310MPa
Melting point 1064degC = 1085degC
Fusing current for
25um-dia/4mm loop
0.61 A < 0.69 A
Corrosion resistance Resistant to oxidizing > Oxidizing-prone
Alloy reliability Prone to interdiffusion with
Aluminum (Kirkendall void) <
Less prone to interdiffusion with
Aluminum
Cu wire is superior in electrical characteristics/mechanical strength to Au wire.
[1] Change Overview (Characteristic comparison)
10 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Package type
Material to be changed?
Base
material
Die bonding
paste
Bonding wire
material
Mold resin Outer
lead
material
Leadframe type
No No
Yes
From Au to Cu
Yes
To be unified
into Halogen-
free resin
No
[2] Description of Change
■ Package type to be affected & change item
Summary of changes:
- Bonding wire material of each package type will be changed from Au to Cu.
- Halogen-contained mold resin used for some product types will be changed to Halogen-free type as corrosion
caused by reaction between Halogen-base material and Cu is worried.
11 IWATE TOSHIBA ELECTRONICS CO.,LTD.
■ Package structural drawing showing change point
<< Current package >> << Modified package >>
(1) Bonding wire : Cu
(2) Mold resin:
Halogen-free
(1) Bonding wire : Au
(2) Mold resin:
Halogen-contained or halogen-free
Change in (1) Bonding wire & (2) Mold resin will involve no change in product characteristic/ reliability/
package dimensions/ guaranteed mount conditions.
(3) Lead frame (3) Lead frame
[3] Conceptual Drawing of Change Point
12 IWATE TOSHIBA ELECTRONICS CO.,LTD.
[4] Risk Analysis for Change
■ FMEA (FAILURE MODE AND EFFECTS ANALYSIS) for identification of risks
associated with this change
New item
(Dimension/material)Failure Mode Cause of failure
OO
C
Impact of failure
SE
V
Detection method
DET
RP
N
Preventive measure Verification result
OO
C
SEV
DET
RP
N
Cu wire Insufficient bonding strengthInsufficient metal alloy formation due to
conditions not harmonized10
Electrical characteristic
failure (open)10 Wire pull strength/ ball shear strength 3 300 Verify bonding conditions Wire pull/ball shear strength test result 1 10 3 30
Open in bonding wire Stress-caused wire break 5Electrical characteristic
failure (open)10 TCT(temp. cycle test) 5 250
Check only (higher strength thanAu)
TCT result 1 10 5 50
Rise in wire resistance Oxidization in Cu surface 10Electrical characteristic
failure7 HTS(high temperature storage test) 5 350 Optimize process control HTS result 1 7 5 35
Open in bonding areaReduced strength due to growth of
Kirkendall void5
Electrical characteristic
failure (open)10 HTS 5 250
Check only (higher strength thanAu)
HTS result 1 10 5 50
Open in bonding area Corrosion due to ion components of resin 10Electrical characteristic
failure (open)10 PCT(pressure cooker test) 5 500 Adopt Halogen-free resin
PCT/THS(temperature humidity storagetest) result
1 10 5 50
Short between wires Migration due to ion components of resin 10Electrical characteristic
failure (short)10 THB(temperature humidity bias test) 5 500 Adopt Halogen-free resin THB result 1 10 5 50
Short between wiresWire displacement during resin
encapsulation5
Electrical characteristic
failure (short)10 X-ray inspection 5 250
Check only (higher strength thanAu)
Wire displacement check result 1 10 5 50
Leakage current due to damage
in dieDamage caused by bonding stress 10
Electrical characteristic
failure7
Check for crack by wet-chemical
decapsulation7 490 Verify bonding conditions Under-pad damage check result 1 7 7 49
Halogen-free resin Pop corn crack Insufficient resin adhesion 5Electrical characteristic
failure (open)10 SAT after heat resistance test 5 250 Adopt proven resin Heat resistance test result 1 10 5 50
■ For oxidation/corrosion of Cu wire which are identified as concerns about change to Cu
wire by the above FMEA, the following two actions will be implemented:
1) Introduction of forming gas and 2) Unification into halogen-free resin
(See subsequent slides for evaluation result for each item.)
13 IWATE TOSHIBA ELECTRONICS CO.,LTD.
[5] Basic Evaluation Data for Change Risk
5-1) 1st bond section view (Package type: SSOP16)
14 IWATE TOSHIBA ELECTRONICS CO.,LTD.
5-2) 2nd bond section view (Package type: SSOP16)
[5] Basic Evaluation Data for Change Risk
15 IWATE TOSHIBA ELECTRONICS CO.,LTD.
5-3)Workmanship comparison between Cu and Au wires)
Item Au wire (n=22) Cu wire (n=22)
Pull strength [mN ] AVE 81.0 124.0
MAX 92.1 139.8
MIN 65.7 111.5
Ppk 2.32 3.40
Shear strength [mN ] AVE 337.4 342.9
MAX 382.4 398.6
MIN 222.8 293.6
Pp 1.40 1.88
Pull strength on 2nd bond side[mN ]
AVE 79.6 90.0
MAX 91.3 115.2
MIN 61.6 74.2
Pp 1.56 1.54
Wire displacement [%] AVE 1.7 1.4
MAX 2.5 2.2
MIN 1.02 0.41
Pp 5.69 6.14
Cu Au
Spec. 29.4mN以上 29.4mN以上
AVE 117.5mN 61.1mN
MAX 133.7mN 68.6mN
MIN 102.3mN 50.0mN
σ 9.7 4.6
cp 3.03 2.29
Spec. 176.4mN以上 147.0mN以上
AVE 396.7mN 254.7mN
MAX 433.7mN 270.5mN
MIN 364.0mN 236.1mN
σ 18.6 8.5
cp 3.94 4.21
Spec. 15%以下 15%以下
AVE 4.4% 5.8%
MAX 5.7% 7.9%
MIN 2.7% 3.2%
σ 0.9 1.0
cp 4.08 3.12
引張強度
剥離強度
ワイヤー流れ
Cu Au
Spec. 29.4mN以上 29.4mN以上
AVE 117.5mN 61.1mN
MAX 133.7mN 68.6mN
MIN 102.3mN 50.0mN
σ 9.7 4.6
cp 3.03 2.29
Spec. 176.4mN以上 147.0mN以上
AVE 396.7mN 254.7mN
MAX 433.7mN 270.5mN
MIN 364.0mN 236.1mN
σ 18.6 8.5
cp 3.94 4.21
Spec. 15%以下 15%以下
AVE 4.4% 5.8%
MAX 5.7% 7.9%
MIN 2.7% 3.2%
σ 0.9 1.0
cp 4.08 3.12
引張強度
剥離強度
ワイヤー流れ
As a result of checking the above data as compared with mass-produced Au-wire packages, we
confirmed no significant difference except for better performance of Cu wire in bonding strength.
From this result, we judged that product start-up was completed.
[5] Basic Evaluation Data for Change Risk
16 IWATE TOSHIBA ELECTRONICS CO.,LTD.
[6] Verification of Electrical Characteristic
Item Comparison result
DC
characteristic
IDDS (Standby current) No significant difference
IIL (Low-level input current) No significant difference
IIH (High-level input current) No significant difference
IOL (Low-level output current) No significant difference
IOH (High-level output current) No significant difference
AC
characteristic Operating range No significant difference
1. Result of electrical characteristic comparison between Cu and Au wires
The above result indicates that this wire material
change will cause no problem in electrical
characteristics.
17 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Test item Condition Read point
Result
(Fail/Gross)
Pressure Cooker 127degC/ 100%/0.24Mpa 120h 0/165pcs
Temperature Cycling -65degC/150degC 300cyc 0/165pcs
Temperature Humidity Bias 85degC/85%/VddMAX 1000h 0/165pcs
[7] Reliability Test Result
No failure was observed after the tests.
18 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Product marking
OITA product Iwate Toshiba product
mother plant OITA 8inch Iwate Toshiba 8inch
Product name(example) ※letters in parenthesis differ
according to the product
TMPM370FYFG TMPM370FYFG(CKYZ)
Change to Iwate Toshiba : “CKYZ” (C: Cu code/Z: Iwate Toshiba code)
marking No change of marking design
Production lot code
(example) ※digit number of product
year differs depending on
a product.
$ $ # # XXL
$ $ : Year(a double figures end)
# # : Weekly
XXL : Trace code(Oita)
$ $ # # XXI
$ $ : Year(a double figures end)
# # : Weekly
XXI : Trace code(Iwate)
・Regarding Iwate Toshiba product, letters in parenthesis(ADD code) of product name is changed.
・Although there is no change of marking design, but factory code in production lot code is changed.
・As for the PKG assembly, there is no change of assembly site and assembly material compared
with current OITA product.
19 IWATE TOSHIBA ELECTRONICS CO.,LTD.
Request for Approval
< Request >
The changeover to the manufacturing factory and new bonding
wire will be implemented after we confirm through sufficient
evaluations based on our internal qualification results that this
change will cause no problem.
If you have requests for the relevant document/data or any
questions, please inform our Sales representatives nearest you.
We would appreciate it if you would provide us with first
response to this change by The end of November,30 2014.
20 IWATE TOSHIBA ELECTRONICS CO.,LTD.