Product / Process Change Notice - Mouser Electronics · The above information is the exclusive...

The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.

Table No.: 1110-0001-08-A

Product / Process Change Notice

No.: Z200-PCN-DM201912-07-A Date: December 30, 2019

Change Title : W25Q64JW “J-Series” (F58) to replace W25Q64FW “F-Series” (F58) 64Mb 1.8V SpiFlash® Memories

Change Classification: Major Minor with customer notification Minor without customer notification Change item : Design Raw Material Wafer FAB Assembly Testing Packing Others

Affected Product(s) :

W25Q64FWBYIG , W25Q64FWSSIF , W25Q64FWSSIG , W25Q64FWSSIQ , W25Q64FWZEIG , W25Q64FWZPIF , W25Q64FWZPIG , W25Q64FWZPIQ , W25Q64FWXGIG

Description of Change(s)

The W25Q64JW 64Mb SpiFlash® Memories use Winbond’s F58 Flash technology. It is function-compatible with W25Q64FW F58 devices offering improved performance, features and availability.

a) Command backward compatible with W25Q64FW (same Superset Instruction Set)

b) Clock operation up to 133MHz

c) Support DTR with Max. frequency up to 66MHz

d) SPI with Single / Dual / Quad / QPI

e) Flexible architecture with 4KB sectors

f) Support low power consumption compared to W25Q64FW

g) Support fast programing compared to W25Q64FW

Reason for Change(s) :

Improve features, cost, and keep command backward compatible with W25Q64FW (same Superset Instruction Set).

Impact of Change(s) : ( positive & negative )

Form : Change No change except WLCSP package form. (Please refer to attachment I)

Fit : Change No change except WLCSP package form. (Please refer to attachment I)

Function : No Concern (Please refer to attachment II)

Reliability : No Concern (Please refer to attachment III)

Hazardous Substances: No Concern (Please refer to attachment IV)

Qualification Plan/ Results :

Based on Winbond W25Q64JW Serial Flash Reliability report, the new product meets our criteria and no quality concern(refer to Attachment III in details)

The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.

Table No.: 1110-0001-08-A

Implementation Plan :

Please refer to attachment V for details.

Date Code: onward Lot No: onward Proposed first ship date: Please refer to attachment V.

Originator: (QA)

Approval: (QA Dept. Manager)

Approval: (QRA Director)

Contact for Questions & Concerns

Name: Betty Huang TEL:886-3-5678168 (ext.76549) FAX: 886-3-5796124

Address : No. 8,Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881,Taiwan

E-mail: [email protected]

Customer Comments: Note: Please sign this notice, and return to Winbond contact within 30 days. If no response is received within 30 days, this Change Request will be assumed to meet your approval.

Major change: Approval Disapproval Conditional Approval : .

Minor change with customer notification: Recognition

Minor change without customer notification: Approval Disapproval

Conditional Approval :

Comment:

Date:

Dept. name:

Person in charge:

Table No. : 1260-0009-02-A

Winbond Electronics Corporation No.539, Sec.2, Wenxing Rd., Jhubei City,

Hsinchu County 30274, Taiwan R.O.C.

Product Obsolescence Notice

W25Q64JW SpiFlash Memories

Notification Date: Dec,20, 2019

Dear Valued Customer,

This letter is to notify you of Winbond’s intention to terminate production of the W25Q64FW SpiFlash memory, and

replace it with the W25Q64JW. Replacement part numbers are listed below:

Winbond Winbond Primary Replacement PN

Current PN (58nm J-Series)

(58nm F-Series)

W25Q64FWBYIG W25Q64JWBYIQ W25Q64JWBYIM

W25Q64FWSSIG W25Q64FWSSIQ W25Q64FWSSIF

W25Q64JWSSIQ W25Q64JWSSIM

W25Q64FWZEIG W25Q64JWZEIQ W25Q64JWZEIM

W25Q64FWZPIG W25Q64FWZPIQ W25Q64FWZPIF

W25Q64JWZPIQ W25Q64JWZPIM

W25Q64FWXGIG W25Q64JWXGIQ W25Q64JWXGIM

For WLCSP, please contact our sales to get the different POD Dimension.

The W25Q64JW device features:

Features a) Command backward compatible with W25Q64FW (same Superset Instruction Set)

b) Clock operation up to 133MHz

c) Support DTR with Max. frequency up to 66MHz

d) SPI with Single / Dual / Quad / QPI

e) Flexible architecture with 4KB sectors

f) Support low power consumption compared to W25Q64FW

g) Support fast programing compared to W25Q64FW

Please refer to the table below for your particular product last time order date and Winbond last shipment date and use

this table to determine your last time buys and subsequent request dates. Winbond Electronics reserves the right to limit

last time buy quantities based on capacity and material availability. Please notify Winbond as soon as possible if there

are any concerns with these this schedule.

Part

Number

Notification

Date

Last Order

Date

Last Ship

Date

Part

Number

Reliability

Report

Mass

Production

W25Q64FW Jan./01/

2020

Jul./01/

2020

Jan./01/

2021 W25Q64JW ready

Nov./01/

2019

Jooweon Park

Technology Executive

Flash Product Marketing Center

Hazardous Substances Check List

Raw material name: W25Q64JWZPIQ

Element Specification Measured Data DL Result

Cd

(Cadmium, 鎘) < 20ppm 4 ppm 0.8 PASS

Pb

(Lead, 鉛) < 700ppm ND 0.4 PASS

Hg

(Mercury, 汞) < 200ppm ND 0.4 PASS

Cr

(Chromium, 鉻) < 700ppm 1 ppm 0.8 PASS

Br

(Bromine, 溴) < 250ppm 14 ppm 0.1 PASS

Cl

(Chlorine, 氯) < 630ppm ND 15 PASS

Sb

(Antimony, 銻) < 700ppm ND 2.5 PASS

註: DL 為儀器之有效偵測極限，量測值 < DL，則標示 ND。

Conclusion: ■ Accept Reject

Engineer:

Date: 2019/12/13


Raw material name: W25Q64JWXGIQ


Cd (Cadmium, 鎘鎘鎘鎘)

< 20ppm ND 0.8 PASS

Pb (Lead, 鉛鉛鉛鉛)

< 700ppm ND 0.4 PASS

Hg (Mercury, 汞汞汞汞)

< 200ppm 53 ppm 0.4 PASS

Cr (Chromium, 鉻鉻鉻鉻)


Br (Bromine, 溴溴溴溴)


Cl (Chlorine, 氯氯氯氯)

< 630ppm ND 15 PASS

Sb (Antimony, 銻銻銻銻)

< 700ppm 7 ppm 2.5 PASS 註註註註: DL 為儀器之有效偵測極限為儀器之有效偵測極限為儀器之有效偵測極限為儀器之有效偵測極限，，，，量測值量測值量測值量測值 < DL，，，，則標示則標示則標示則標示 ND。。。。

Conclusion: ■■■■ Accept �� Reject

Engineer:

Date: 2019/12/13


Raw material name: W25Q64JWSSIQ













< 630ppm ND 15 PASS


< 700ppm 4 ppm 2.5 PASS 註註註註: DL 為儀器之有效偵測極限為儀器之有效偵測極限為儀器之有效偵測極限為儀器之有效偵測極限，，，，量測值量測值量測值量測值 < DL，，，，則標示則標示則標示則標示 ND。。。。


Engineer:

Date: 2019/12/13


Raw material name: W25Q64JWBYIQ













< 630ppm ND 15 PASS


< 700ppm ND 2.5 PASS 註註註註: DL 為儀器之有效偵測極限為儀器之有效偵測極限為儀器之有效偵測極限為儀器之有效偵測極限，，，，量測值量測值量測值量測值 < DL，，，，則標示則標示則標示則標示 ND。。。。


Engineer:

Date: 2019/12/13

Winbond Product Comparison

64M-Bit Serial Flash Memory Comparison

Winbond W25Q64FW W25Q64JW

Technology 58nm 58nm VCC 1.65V ~ 1.95V 1.7V ~ 1.95V

Package Types

– 8-pin SOIC 208-mil – 8-pad WSON 6x5-mm / 8x6-mm – 16-pin SOIC 300-mil (additional /RESET pin) – 16-ball WLCSP – Contact Winbond for KGD and other options

– 8-pin SOIC 208-mil – 8-pad WSON 6x5-mm / 8x6-mm

– 8-pad USON 4x3mm

– 8-pad XSON 4x4mm

– 16-pin SOIC 300-mil (additional /RESET pin) – 12-ball WLCSP – Contact Winbond for KGD and other options

Special Pins /HOLD or /RESET /HOLD* or /RESET "Power Up" Address Mode 3-Byte 3-Byte

Page Program Size 256B 256B

Erase Granularity Uniform 4/32/64KB

Uniform 4/32/64KB

UID / OTP 64-Bit Unique ID

3x256Byte OTP 64-Bit Unique ID 3x256Byte OTP

AC PARAMETERS Fast Read Speed FR Fast Read 104MHz Fast Read 133MHz

Normal Read Speed fR 50MHz 50MHz Page Program Time tPP 0.7 / 5ms 0.8 / 3ms

First Byte Program Time tBP1 30/60µs Byte Program Time tBP2 2.5 / 12µs

4KB Sectors Erase Time tSE 100 / 400ms 45 / 400ms 32KB Blocks Erase Time tBE1 120 / 1,600ms 120 / 1,600ms 64KB Blocks Erase Time tBE2 150 / 2,000ms 150 / 2,000ms

Chip Erase Time tCE 20 / 100s 20 / 100s DC PARAMETERS

Read Current ICC rd 20mA (104MHz) 20mA (133MHz) Program/Erase Current ICC P/E 20 /25mA 15 /20mA

Standby Current ICC stdby 10 / 50μA 5 / 25μA Deep Power Down Current ICC dpwd 1 / 20μA 0.1 / 5μA Summary of Features

Features

BP protection BP protection Individual Block protection Individual Block protection

Hardware Reset Hardware Reset Software Reset Software Reset

Program/Erase Suspend/Resume Program/Erase Suspend/Resume QPI QPI*

SFDP SFDP DDR N/A DDR (DTR)*

Uniform 4/32/64KB Uniform 4/32/64KB Deep Power Down Deep Power Down Unique ID (64-Bit) Unique ID (64-Bit) 3x256-Byte OTP 3x256-Byte OTP

Burst Read with Wrap

Winbond Confidential Do Not Distribute Without Permission

12/18/2019 1 of 3


12/18/2019

Winbond Confidential Do Not Distribute Without Permission 2 of 3



Summary of Command Descriptions Write Enable 06h 06h Write Disable 04h 04h

Read JEDEC ID 9Fh 9Fh Volatile SR Write Enable 50h 50h Read Status Register-1 05h 05h

Write Status Register 1/2 01h 01h Read Status Register-2 35h 35h Write Status Register-2 31h 31h Read Status Register-3 15h 15h Write Status Register-3 11h 11h

Read Data 03h 03h Fast Read 0Bh 0Bh

Burst Read with Wrap (3-byte Addr) 0Ch 0Ch DTR Read with Wrap 0Eh

DTR Fast Read 0Dh Fast Read Dual I/O BBh BBh

DTR Fast Read Dual I/O BDh Fast Read Dual Output 3Bh 3Bh

Fast Read Quad I/O EBh EBh DTR Fast Read Quad I/O EDh

Word Read Quad I/O E7h E7h Octal Word Read Quad I/O E3h E3h

Fast Read Quad Output 6Bh 6Bh Enable QPI Mode 38h 38h Disable QPI Mode FFh FFh Block (4KB) Erase 20h 20h Block (32KB) Erase 52h 52h Block (64KB) Erase D8h D8h

Chip Erase 60/C7h 60/C7h Program/Erase Suspend 75h 75h Program/Erase Resume 7Ah 7Ah

Page Program 02h 02h Quad Page Program 32h 32h

Power Down B9h B9h Release Power Down / Device ID ABh ABh Read Manufacturer / Device ID 90h 90h

Read Manufacturer / Device ID Dual I/O 92h 92h Read Manufacturer / Device ID Quad I/O 94h 94h

Erase Security Register 44h 44h Program Security Register 42h 42h

Read Security Register 48h 48h Single Block Lock 36h 36h

Single Block Unlock 39h 39h Block Protect Read 3Dh 3Dh Gang Block Lock 7Eh 7Eh

Gang Block Unlock 98h 98h Read SFDP 5Ah 5Ah

Eanble Reset 66h 66h Reset 99h 99h




Set Burst Length 77h 77h Read Unique ID 4Bh 4Bh

Manufacturer and Device Identification Manufacturer ID

Winbond Serial Flash (MF[7:0])

EFh

EFh

Device ID ABh, 90h, 92h, 94h (ID[7:0])

16h

16h

Device ID 9Fh (ID[15:0])

6017h 6017h (W25Q64JW-IQ)

8017h (W25Q64JW-IM)

* Only available on the W25Q64JW-IM

Winbond Confidential Do Not Distribute Without Permission

12/18/2019 3 of 3

W25Q64JW

Publication Release Date: 10/9/2019

-1- Reliability Engineering Department

PART NO. : W25Q64JW

FUNCTION : 1.8V 64M FLASH MEMORY

PROCESS : 58nm CMOS (DPTM)

RA ENGINEER:

RA MANAGER:

RELIABILITY REPORT

W25Q64JW

W25Q64JW


- 2 - Reliability Engineering Department

~SUMMARY~

W25Q64JW for 8-SOP 208 mil passed the reliability

items as follows:

. Early Life Fail Rate : 0/3150 pcs

.High Temp. Operating : 0/231 pcs

. Data Retention : 0/231 pcs

. Endurance Cycling with Data Retention : 0/231 pcs

. Pre-Condition Test : 0/924 pcs

. High Temp. Storage Life Test : 0/231 pcs

. Pressure Cooker Test : 0/231 pcs

. Temperature Cycle Test : 0/231 pcs

. Highly Accelerated Stress Test : 0/231 pcs

. ESD-HBM : 0/36 pcs

. ESD-CDM : 0/9 pcs

. Latch -Up Test : 0/18 pcs

W25Q64JW



---CONTENTS---

Ⅰ. PRODUCT DESCRIPTION

A. Introduction

B. Features

C. Function Block

Ⅱ. LIFE TEST

A. Introduction

1. Early Life Fail Rate (ELFR)

2. High Temp. Operating Life Test (HTOL)

3. Data Retention (DR)

4. Non-Volatile Memory Cycling Endurance (NVCE)

B. Test Results


2. High Temp. Operating Life Test (HTOL)

3. Data Retention (DR)


W25Q64JW



Ⅲ. ENVIRONMENTAL TEST

A. Introduction

1. Pre-Condition Test

2. High Temp. Storage Life Test (HTSL)

3. Pressure Cooker Test (PCT)

4. Highly Accelerated Stress Testing (HAST)

5. Temperature Cycle Test (TCT)

B. Test Results

1. Pre-Condition Test

2. High Temp. Storage Life Test (HTSL)




Ⅳ. ESD & LATCH-UP

A. Introduction

1. ESD

2. LATCH-UP

B. Test Results

1. ESD

2. LATCH-UP

W25Q64JW



I. PRODUCT DESCRIPTION

A. Introduction

The W25Q64JW (64M-bit) Serial Flash memory provides a storage

solution for systems with limited space, pins and power. The 25Q series

offers flexibility and performance well beyond ordinary Serial Flash

devices. They are ideal for code shadowing to RAM, executing code

directly from Dual/Quad SPI (XIP) and storing voice, text and data. The

device operates on 1.7V to 1.95Vpower supply with current consumption

as low as 1μA for power-down. All devices are offered in space-saving

packages.

The W25Q64JW array is organized into 32,768 programmable pages of

256-bytes each. Up to 256 bytes can be programmed at a time. Pages

can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB

block erase), groups of 256 (64KB block erase) or the entire chip (chip

erase). The W25Q64JW has 2,048 erasable sectors and 128 erasable

blocks respectively. The small 4KB sectors allow for greater flexibility in

applications that require data and parameter storage.

The W25Q64JW supports the standard Serial Peripheral Interface (SPI),

and a high performance Dual/Quad output as well as Dual/Quad I/O SPI:

Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2, and I/O3.

SPI clock frequencies of up to 133MHz are supported allowing equivalent

clock rates of 532MHz (133MHz x 4) for Quad I/O when using the SPI

Fast Read Quad I/O instructions. These transfer rates can outperform

standard Asynchronous 8 and 16-bit Parallel Flash memories.

Additionally, the device supports JEDEC standard manufacturer and

device ID, and a 64-bit Unique Serial Number and three 256-bytes

Security Registers.

W25Q64JW



B. Features

New Family of SpiFlash Memories

– W25Q64JW: 64M-bit / 8M-byte

– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold

– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold

– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

– QPI: CLK, /CS, IO0, IO1, IO2, IO3

– SPI/QPI DTR(Double Transfer Rate) Read

– Software & Hardware Reset(1)

Highest Performance Serial Flash

– 133MHz Quad I/O SPI clocks

– 66MB/S continuous data transfer rate

– Min. 100K Program-Erase cycles per sector

– More than 20-year data retention

Low Power, Wide Temperature Range

– Single 1.7V to 1.95Vsupply

– <1μA Power-down (typ.)

– -40°C to +85°C operating range

Flexible Architecture with 4KB sectors

– Uniform Sector/Block Erase (4K/32K/64K-Byte)

– Program 1 to 256 byte per programmable page

– Erase/Program Suspend & Resume

Advanced Security Features

– Software and Hardware Write-Protect

– Special OTP protection

– Top/Bottom, Complement array protection

– Individual Block/Sector array protection

– 64-Bit Unique ID for each device

W25Q64JW

Publication Release Date:10/9/2019


– Discoverable Parameters (SFDP) Register

– 3X256-Bytes Security Registers

– Volatile & Non-volatile Status Register Bits

Space Efficient Packaging

– 8-pin SOIC 208-mil

– 8-pad XSON 4x4-mm

– 8-pad USON 4x3-mm

– 8-pad WSON 6x5-mm / 8x6-mm

– 24-ball TFBGA 8x6-mm (5x5 ball array)

– 12-ball WLCSP

– Contact Winbond for KGD and other options

Note: 1. Hardware /RESET pin is only available on TFBGA or SOIC16 packages

W25Q64JW



C. Function Block

W25Q64JW



II. LIFE TEST

A. Introduction


1.1 SCOPE

ELFR test is performed to accelerate infant mortality failure mechanisms

which are thermally activated. This can be achieved by stressing the

devices with bias at high temperature.

1.2 TEST CONDITION

Temp ambient = 125C, Vdd = 1.95V, dynamic stressing, Td = 168 hrs.

(JEDEC74)

2. High-Temperature Operating Life Test (HTOL)

2.1 SCOPE

HTOL test is performed to accelerate failure mechanisms which are

thermally activated. This can be achieved by stressing the devices

with bias at high temperature.

2.2 TEST CONDITION

Temp ambient = 125C, Vdd = 1.95V, dynamic stressing, Td = 1000 hrs.

(JESD22-A108)

3. Data Retention Test (DR)

3.1 SCOPE

DR test is to determine the stability of data stored in the device under

high temperature environment.

3.2 TEST CONDITION

Temp = 150C, Td = 1000 hrs. (JESD22-A117)

W25Q64JW




4.1 SCOPE

Test product’s capability to the number of Program and Erase.

4.2 TEST CONDITION

JEDEC-STD-JESD 47

Room Temp cycling test:

TD (Duration) = 1K, 10K, 100K cycles

Vcc = 1.95V

Pattern = 00, FF, CHKBD

Low temp data retention (LTDR):

Dynamic operation life test at room temp.

TD (Duration) = 500 hrs

Vcc = 1.95V

Apply dynamic pattern.

85℃ cycling test:

TD (Duration) = 1K, 10K, 100K cycles

Vcc = 1.95V

Pattern = 00, FF, CHKBD

High temp data retention (HTDR):

Bake at 125°C

TD (Duration) = 10 hrs for 100K cycling,

100 hrs for 10K and 1K cycling.

W25Q64JW



B. Test Results


RUN Lot No 168 Hrs Remark

#1 6850DP000 0/1050

#2 6849GG200 0/1050

#3 6849G8700 0/1050

2. High-Temperature Operating Life Test (HTOL)

2.1 SUMMARY TABLE

RUN Lot No 500 Hrs 1000 Hrs Remark

#1 6850DP000 0/77 0/77

#2 6849GG200 0/77 0/77

#3 6849G8700 0/77 0/77

*Criteria : Acc/Rej = 0/1

W25Q64JW



2.2 FAILURE RATE CALCULATION

F R TCL N

EDH

X. .( )( , )

21 2 2

2

WHERE2

X : CHI-SQUARE Function CL: Confidence Level

N : No of Failures EDH: Equivalent Device Hour

Test

Item

Dev. Hours

at

Tj=125.3C

Equiv. Dev.

Hours at

Tj=55C

No. of

Failure

Failure

Rate

at 55C

HTOL 231000 222268882 0

4.12

FIT

Based on CL = 60% and Activation Energy = 1.1 eV

Tj Ta Pd ja

Where: Tj= junction temp, Ta=125℃ (ambient temp)

Pd=3.8mW (power dissipated on the device)

Θja=94.6℃/W (thermal resistance from junction to ambient)

3. Data Retention Test (DR)


#1 6850DP000 0/77 0/77

#2 6849GG200 0/77 0/77

#3 6849G8700 0/77 0/77

*Criteria : Acc/Rej = 0/1.

W25Q64JW




4.1 Room temp 1k~100k cycling with Data Retention

RUN Lot No RT cycling:

1K~100K

LTDR-

500 HRs

Remark

#1 6850DP000 0/38 0/38

#2 6849GG200 0/38 0/38

#3 6849G8700 0/38 0/38

*Criteria: Acc/Rej = 0/1.

4.2 85°C 1k~100k cycling with Data Retention

RUN Lot No 85°C

cycling:

1K~100K

HTDR-

10 HRs

HTDR-

100 HRs

Remark

#1 6850DP000 0/39 0/39 0/39

#2 6849GG200 0/39 0/39 0/39

#3 6849G8700 0/39 0/39 0/39

*Criteria: Acc/Rej = 0/1.

W25Q64JW



III. ENVIRONMENTAL TESTS

A. Introduction

1. Pre-condition Test

1.1 SCOPE

Pre-condition Test is to measure the resistance of SMD (Surface Mount

Devices) to the storage environment at the customer site and to thermal

stress created by IR reflow.

1.2 TEST CONDITION

Step 1: TCT (-65C/150C, 5 cycles)

Step 2: Bake (125C, 24 hours)

Step 3: Soak (60C/60%RH, 52 hours)

Step 4: IR, 3 passes (JEDEC 020).

2. High Temperature Storage Life Test (HTSL)

2.1 SCOPE

HTSL test is to determine the stability of the device in high temperature

environment.

2.2 TEST CONDITION

Temp = 150C, Td = 1000 hrs. (JESD22-A103)


3.1 SCOPE

PCT is to evaluate the device resistance to moisture penetration.

3.2 TEST CONDITION

Ta = 121C, RH = 100%, P = 2 atm, Td = 168 Hrs. (JESD22-A102)

W25Q64JW




4.1 SCOPE

HAST is to evaluate the reliability of non hermetic packaged solid-state

device in humid environments.

4.2 TEST CONDITION

Ta = 130C, Vdd=1.95V, RH% = 85%, Td = 168 Hrs. (JESD22-A110)


5.1 SCOPE

TCT is to evaluate the resistance of device to environmental temperature

change.

5.2 TEST CONDITION

-65C ~ +150 C, Condition C, Soak Mode 1, 500 cycles.

(JESD22-A104)

W25Q64JW



B. Test Result

1. Pre-condition Test

Run Lot No Result Remark

#1 6819GK3BF 0/308

#2 6819GF8AR 0/308

#3 6819GM500 0/308


2. High Temperature Storage Life Test (HTSL)


#1 6819GK3BF 0/77 0/77

#2 6819GF8AR 0/77 0/77

#3 6819GM500 0/77 0/77

*Criteria : Acc/Rej = 0/1


Run Lot No 168 Hrs Remark

#1 6819GK3BF 0/77

#2 6819GF8AR 0/77

#3 6819GM500 0/77


W25Q64JW




Run Lot No 168 Hrs Remark

#1 6819GK3BF 0/77

#2 6819GF8AR 0/77

#3 6819GM500 0/77



Run Lot No 500 Cycles Remark

#1 6819GK3BF 0/77

#2 6819GF8AR 0/77

#3 6819GM500 0/77


W25Q64JW



IV. ESD AND LATCH-UP

A. Introduction

1. ESD

1.1 SCOPE

ESD test is to evaluate the immunity of device to electrostatic

discharge.

1.2 TEST CONDITION

Human Body Model (HBM): JS-001

Charge Device Model (CDM): JS-002

2. Latch-Up

2.1 SCOPE

Latch-Up test is to evaluate the immunity of the devices to latch-up.

2.2 TEST CONDITION

JEDEC STD 78E, Temp = 25 C, VDD = Max. Operating Voltage

W25Q64JW



B. Test Results

1. ESD

1.1 Human Body Model

Run LOT# POSITIVE NEGATIVE Remark

#1 6850DP000 0/6 0/6

#2 6849GG200 0/6 0/6

#3 6849G8700 0/6 0/6


*| SPEC | : >2KV

1.2. Charge Device Model

Run LOT# POSITIVE / NEGATIVE Remark

#1 6850DP000 0/3

#2 6849GG200 0/3

#3 6849G8700 0/3


*| SPEC | : >750V

2. Latch-Up

Run LOT# POSITIVE NEGATIVE Remark

#1 6850DP000 0/3 0/3

#2 6849GG200 0/3 0/3

#3 6849G8700 0/3 0/3


W25Q64JW



*| SPEC. | : I-Test > 200mA

Vsupply over voltage Test>1.5x max supply voltage

W25Q64JW



11/04/2019

W25Q64FW and W25Q64JW

WLCSP POD comparison

PH20 Marten

Dec./2019

W25Q64FW POD

16-Ball WLCSP (Ball pitch: 0.50mm)

W25Q64FW POD Dimension

W25Q64JW POD

12-Ball WLCSP (Ball pitch:0.5mm)

W25Q64JW POD Dimension

Thank Youwww.winbond.com

[email protected]

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Date post:	17-Jun-2020
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Product / Process Change Notice - Mouser Electronics · The above information is the exclusive...

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