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Taking light to new dimensionsTaking light to new dimensions……
Progress on DPP source development towards HVM
Masaki YoshiokaXTREME technologies GmbH
2007 International Symposium on Extreme Ultraviolet Lithography29-31 October 2007Sapporo, Japan
XTS 13-150 IF
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 22
Taking light to new dimensionsTaking light to new dimensions……
OutlineOutline
1. Progress on commercial Xe sources2. HVM source development and Roadmap3. Summary
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 33
Taking light to new dimensionsTaking light to new dimensions……
XTREME leads installed EUV sources in the field
• Integrated metrology tools provide for reliable operation with constant source characteristics
• Performance results and improvements benefit from partnering with key component suppliers and feedback received from customers
• 6 DPP sources in use for wafer exposures• 10 DPP sources operated for EUV research• XTS13-150 IF has been successfully
integrated at customer side
XTS13-150IFXTS13-75IFXTS13-352003 2006 2007
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 44
Taking light to new dimensionsTaking light to new dimensions……
DPP source is an integration of crucial key components
DMTDMT
ElectrodesElectrodes cooling, Preionization control,gas supplying etc
Vacuum control, Gas supply, optical alignment etc.
Vacuum control, contamination controloptical alignment etc.
XTREME has provided integrated performance of SoCoMo
HVPSHVPScooling,
Preionization control
Collector opticsCollector optics
IF power and imageIF power and image
Integrated performance needs fundamental study and feedback received from customers
VacummVacumm Tech.Tech.
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 55
Taking light to new dimensionsTaking light to new dimensions……
(identical scale & total power)
Optical source model permits reliable calculations:Collection efficiency reproduced within 10%SoCoMo Far Field simulations
Source Model Enables Reliable Ray Tracing Simulations
Pinch, measured Pinch, ZEMAX® model
Key objective: model to reproduce spatial plasma power distribution
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 66
Taking light to new dimensionsTaking light to new dimensions……
SoCoMo Ray Tracing Allows Far Field Predictions
Point like source Extended source
Effect of extended source vs. point like source:• Collector efficiency drop 15.9% 8.8%• DMT transmission drop 87.8% 83.2%Extended source prediction confirmed by measurements
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 77
Taking light to new dimensionsTaking light to new dimensions……
Point like source Extended pinch like source
VIS Test Stand Strongly Supports Optical Performance Optimization
• Measurements with different source geometry• Characterization of individual and convoluted contributions of collector and DMT
to far field uniformity• Efficiently used for optimization of far field imaging performance
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 88
Taking light to new dimensionsTaking light to new dimensions……
Successful Introduction of New Basic EUV Metrology
EUV-reflectometer realized by LZH• Full collector acceptance• Collector reflectivity accuracy < 2 %• Collector/DMT characterization capability• Keying XTS 13-150 SoCoMo optical performance
Intensity distribution of full collector behind source point
SO-05: U. Hintze et.al., EUV Source Collectors: Characterization of Performance and Lifetime using a Full Size EUV Collector Reflectometer
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 99
Taking light to new dimensionsTaking light to new dimensions……
Electrode Lifetime Extension Improves Downtime and CoO
0 100 200 300 400 500 600
Total Pulses (Mio)
Col
lect
ion
effic
ienc
y (a
rb. u
nits
)• Electrode lifetime extension achieved by design improvements• Cathode lifetime 500M and anode lifetime >4B demonstrated• CE fluctuations can be compensated by energy control
No power stabilization applied during test
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1010
Taking light to new dimensionsTaking light to new dimensions……
XTS 13-150 IF: EUV Power @IF vs. source power
• These are real IF powers, which have been measured and NOT scaled! • Up to 4W achieved in 100% duty cycle operation• Collection efficiency almost independent on source parameters (e.g.
repetition rate, buffer gas flow)
1
2
3
4
50 100 150 200 250
EUV pinch power, W in 2pi
EUV
pow
erin
IF, W
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1111
Taking light to new dimensionsTaking light to new dimensions……
• Current Output power @ IF (3 W level) is limited by component lifetime considerations
• Experimental results on improved components evidence output power capability of 7W @IF
• Output power improvement to 4-5W expected in December 2007
• 7W evidence until Q2/2008
XTS 13-150 IF Power Status and Roadmap
0
2
4
6
8
TODAY Q1/2008 Q3/2008
Pow
er [W
]
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1212
Taking light to new dimensionsTaking light to new dimensions……
OutlineOutline
1. Progress on commercial Xe sources2. HVM source development and Roadmap3. Summary
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1313
Taking light to new dimensionsTaking light to new dimensions……
XTREME Develops LA RDE as Promising Technology
• Tin supply regenerates electrode surface and serves as fuel
• increases effective electrode area• reduces heat load per area • increases electrode lifetime
Laser Assisted DPP source with Rotating Disk Electrodes (RDE)
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1414
Taking light to new dimensionsTaking light to new dimensions……
overall
useable (energy content in ø 1.3 mm)
0 2 4 6 8 10 12 14 16 18 200
40
80
120
160
200
240
280
E EU
V[2π s
r,2%
bw] /
mJ
Ein / J
LA RDE Exhibits Scaling Issues with surface evaporation
ø = 1.3 mm
ø = 1.3 mm
Usable energy saturatesat input energies of about 8J
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1515
Taking light to new dimensionsTaking light to new dimensions……
Adding Tin Droplet to LA RDE Solves Saturation Issue
Laser assisted droplet RDE design provides;
• higher brightness plasma • mass limited tin fuel
supply independent of electrode material and electrode surface regeneration
• superior scaling possibilities
• large collecting angles feasible
Droplet Technology brings Advantage over Surface Evaporation
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1616
Taking light to new dimensionsTaking light to new dimensions……
ø = 1.3 mm
ø = 1.3 mm
High pulse energy while maintaining a small emitting volume – the key to scalable of highpower
LA Droplet RDE Source provides High Power for HVM
overall
useable(energy contentin ø 1.3 mm)
0 2 4 6 8 10 12 14 16 18 200
40
80
120
160
200
240
280
Ein / J
E EU
V[2π
sr,2
%bw
] / m
J
No saturation of usable energy detected for up to 14J
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1717
Taking light to new dimensionsTaking light to new dimensions……
Visible image of the plasma showing a potentially large opening angle of the electrode arrangement
ø = 1.3 mm
EUV in-band picture of the same pulse
Electrodesurface
LA Droplet RDE Source allows for Large Collection Angle
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1818
Taking light to new dimensionsTaking light to new dimensions……
Comparison between surface evaporation and droplet injection
surface evaporation
droplet evaporation
useable(energy contentin ø 1.3 mm)
Ein / J
overall
0 2 4 6 8 10 12 14 16 18 200
40
80
120
160
200
240
280E E
UV
[2π s
r,2%
bw] /
mJ
LA RDE with Tin Droplets makes available LPP scalingadvantages on robust and proven DPP Technology
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 1919
Taking light to new dimensionsTaking light to new dimensions……
OutOutlook and EUV look and EUV power power demonstration demonstration
Experimental result strongly support scalability.600W in source power @5kHz will be demonstratedby end of December 2007
0,0 0,5 1,0 1,5 2,00
50
100
150
200
250
Pow
er /
W /
2πsr
Repetition rate / kHz
Experimental installation
Output power: 200 W/ 2πsr at 1.4 kHzConstant conversion efficiency
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 2020
Taking light to new dimensionsTaking light to new dimensions……
Key componeKey componentsnts development for HVM DPP development for HVM DPP
•• Droplet system is fundamentally established and Droplet system is fundamentally established and continuously improvecontinuously improvedd for practical usefor practical use
•• Adding new functions onto similar DMT concept Adding new functions onto similar DMT concept of Xe DPP sourceof Xe DPP source
•• ScalScaling fing for higher power metrolor higher power metroloogy toolsgy tools
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 2121
Taking light to new dimensionsTaking light to new dimensions……
DPP EUV sources: DPP EUV sources: Power status and HVM power roadmapPower status and HVM power roadmap
CurrentlyStatus 10/2007
1st generation
HVM
2nd generation
HVM
3rd generation
HVM
Electrical input energy into plasma (J) 10 10
7
62.5
15 20
Repetition frequency (kHz) 1.5 10 10
Intermediate focus power (W) 6.4 (1) 178.5 238
(1) calculated for existing collector mirror
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 2222
Taking light to new dimensionsTaking light to new dimensions……
SummarySummary
Commercial Xe sources• Output power @ IF currently 3 W level• Improvement to 7 W level ongoing according to our roadmap
HVM source development• The new concept of laser assisted droplet RDE source has
demonstrated its intrinsic performance• Thermal management of RDE combined with droplet target
supply strognly supports the path to HVM• Demonstration of 600 W power in 2π sr by end of 2007 will enable
XTREME technologies to commit for a Beta Level SoCoMo with 50 W IF power in 2008 according to our HVM power roadmap
DPP source provides a cost effective solution for HVM!
20020077 International Symposium on Extreme Ultraviolet LithographyInternational Symposium on Extreme Ultraviolet Lithography, , 2929 –– 3131 October 200October 20077, , Sapporo, JapanSapporo, Japan Page Page 2323
Taking light to new dimensionsTaking light to new dimensions……
• Research supported by – German Government / BMBF under contracts no. 13N8866 – European Commission FP6 project „more Moore“, IST-1-507754-IP
• Thanks to the teams at XTREME technologies and our partners for their contribution and support
– Institute for Optics and Fine Mechanics, Jena, Germany– Laser Zentrum Hannover, Germany– Laser Laboratorium Göttingen, Germany– Media Lario Technologies, Italy– TRINITI, Troitsk, Russia– JENOPTIK, Jena, Germany– USHIO, Tokyo, Japan
Acknowledgements