AD-A252 817
QL% ttaW Ranc end Gem'akny MTT Chiplm.
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CNR, ItalyNEIFrance
~*A~k~p~u Rdserch Off ice UKIEEE Microwave Theory and Technkqu Society
W.- .
Approved for ptubl 101dam
92 710 02 86
Technical Program CommitteeP. Lampariello, University of Rome La Sapienza, Workshop Co-ChairmanR. Sorrentino, University of Perugia, Workshop Co-ChairmanV. Fouad-Hanna, CNET, FranceH. L. Hartnagel, Technische Hochschule, Darmstadt, Germany
Orgpuizing- Committe
Rl. Giorgini, Itelco S.p.a.V., Alleva, Itelco S.p.a.S. Monelli, Itelco S.p.a.S. Catena, University of Perugia
SecretariatN V. Ppni, University of- Perugia .
L. Castellani, University of PerugiaC. Paolotti, University of Rome "La Sapienza"
DISCLIMEl NOTICE
THIS DOCUMENT IS BEST
QUALITY AVAILABLE. THE COPY
FURNISHED TO DTIC CONTAINED
A SIGNIFICANT NUMBER OF
PAGES WHICH DO NOT
REPRODUCE LEGIBLY.
Microwave Theoy and Techniqures GocielyC.&G. Italy. Franco and Germany MTT Chaplets
1992 International Workshopon Millimeter Waves
April 22.24, 1992
I'.II.14ZEI del Capillano del l'opolo
Orvieto, Italy
Orcginimcl bX:
Central aind South Ihlily MIT ChapterFrancex mrr n:iaipir
Get maany MTJl ChiapterUntiversity 4, Periugia
IiTLCO S.p.a.. Orvietto
Suoneiid by:
CNIZ. lIlyCNEiT. lkaacc
USAI(DSG Eurorpcan Rc.'%carch Olicic. UKIEEEl Microwavc lci idTlairs Srciety
Univrsity ofrug ia~:~. ItalyCntramve. lhaliana N.pa.. Itaily
I icco S.1 ,.a.. IalyAlcuiai S.pa.. Itazly
Technical P~rogram Comnan1itLic1). La.nParicllo, Uaivcriy of Romec La Saipieni~i. V/or-ksop CO-Citairn lastR. Sorrentino, Univcrsily of i'crugia. WorksJiop Co-ChairmanV. Fouaid--lmna, CNljr, France
I.L.H.Lrtadcl,17cclanischac I-oclaichule, 1Jaransuidt. Germuany
Organiziug CommnitteeAc io Fo
R<. Giorginl, UIteco S.p.a. NTTF; ablV. Allcva, Ilcico S.p.m. 3Y ~ A
S. MOn)Cil, h1clco S.p.a. I acnuelS. Catcnma, University tif P1cruri.i Jt r fi*t on
Secrewarlt 1 Distribetioalf
V. Papiaai, Univcsity of Pecrugia IAvllabilitY Cod ej
L. Calelai, Universiity of I'crugia I A.1adOC. hi'ololii, Uaaiver.%ily of R(omei "LaI Sipicaai;'ts SPec
FOREXA'ORD
Wclcottic Lo thirdcdtitlfilte Itieniattital wavi kshi p o Nlilleter 'Wave.%. licing heldat lte
I'ahjazz.hid Capot, Ie 1'ojvIh lin Orvielt. Alter lte elithitaragij; succe,'ichth pie vetus cditiiiis at
tlie Uniiversiy 44, Rouiteir Vctgati" in IM ;tolad at the Ujniversit y tit- Iertigia in 1I ' it wasidecidled it) or1galize a necw vwikshii.l, a. a comv.lii i.4.1 lx-te*Il Olw ( eitti1.s t1 iS.11il1 Itily (' lcalitrwith the Framie l e tayCt~t i~site IhLNjtwv 'tiL uh chii~isSwey
111C city oif Oricto has beenl chttiscr a~s lte venue I, it- tisi.vt nott simtply beccause it i. icatedmtidway bctiwcn Ittili and P'erugia. but mintly hIr its tunique cltrtit due lt its sugvestlivc mnedieval
aptpearattcc and thc rich artistic patriimiy dalizig luck (it lte Elrutinsci peinid. Thle l'alaz, del
Capitano del liopolo is nlo do)ubt anl cxtraordiiay cmotiatim, betveeti a litylorical mcdievoal pohiizza
and a niudenti atnd Cfficient Cotugm-ss Ccnter.ITELCO S.p.a. Clitusiastically agrecd to sponsoo~r thic wolrk.shop alld bas beenl a fuiidamnuttal partinerini the torgatniJatiii. 1w sticial lirutram is alsti very attractive. mtcludisie a very itice conceit tit twit
Canadian artists. Tr. Goudic arid D. Lawtiott.
Wc would like ito thank all lte invited specaker.- whit kitndly agreed lt participatc ii the
workshopi and the miany otlters who have woied for its 'necess. Wc are deeply graut lt 'sts
Carrara, onc ul' the fiihaers oaf tuicrtiwavcs in Italy. wtim accepted oiur invitation toi welcomi lte
participanits at t01C q~1iipentig C55iil.
I'aulo Lati~mrihlm, antd Roberto Norcutinlo
%Vurksltnp Co.Chaiiraicii
it. r~icieteI. Akoidoneter. lave Aloplici~nont% joid IriTehnhojgy 'gid
K. Crueller. it Net, Passiive A-ier,,i*,a,' Sciner for Airjvtprior Aleavisritwit t of Itlariti #il IauIinus
NI. Aikawn. AIMIC Tecitiinlogy for ConmFuieatini Sysrtms
It. IFunck. New Integrated SubsYmestm fopr llntgrlatAtpiiins
D. Po,rn New Alilhimneter-110a,'e Devices: Realezatiint tand Perfoyrntie
G. Silancr, FiclEffect, Trimoittfo firsfr the ,thihi,,eter. Wuter Range: 'hiYsieal Atoodv~js. Alawlelutj' UlLtImcceml I'eqrune
J. Frcyer. Tims-Tertninual Millimneter- lVaer, Deces~
1I. L. I Ilrttutgel. 'lechioh,gy Iee ,onrlim. 1o'i,,r-tvu ,Vu,,i-,n Vrowtue.%
T. ltoht. O1164:111 Cmntrol 1fillinmler4Vtlatri Circuits
T. Yotwymatiat. Receott IDeehotnns. #of NRI)-;,.,s. Te, impIig
It. 11. Jamset. Adv'anced Design Tee hnu jues fir Leiear adS Nonldinear MAIC's intto lie Atillimleter. WarrRegimon
V. Fi~uad I lanita. CAD) of Millimter. Wa~ve P'assive Cemioments its Siupended Alicratip Techonahegy
A. A. Ohmer Leakage and Crastalk lFffects in Alilimeter-lMaw Integrated Circuits
N. Alemupitius. JD Ainodeling lof Atidhi neter-Wov Circits unitd Anmismnn
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TRANSMITTER RECEIVER
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VOICE SIGNALS' c VI SIGNALBUFFER AMPLIFIERS DOBLR .Gz R
MIC ASSEMBLY
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MIC ASSEMBLY
MATSUSHITAElectric Industrial Company, Ltd.
MATSUSHITAElectric Industrial Company, Ltd.
Major chacerisatcs o( the 50 GlIz communicadon system
F-quency 50.46G!Iz
TransmitLing power 10d~m
Noise figure 13dB
Frequency stability ±100 ppm (-20-60 C)
Modulation FM
Frequency deviation 16 M~lz pp
Intemediae f(nuency 960 MNhIF bidwidth 27 Mliz
Video sigal bandwidth 4 W
Audio signal bandwidth 15 KHz
fELEFUNKENWicol 38 Sendlertechnik38 GHz Wireless Linkfor Digital Data Transmiissiont
transmitting antenna at
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properties whwee trees etc.
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+Deutsche Aerospace
Manuf act. Type Freq. Output Modulation Data Rate Hoplength
GHz power kbits/s km________mW
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NEC PL 50 50 15 FSK 1,544 2
FUJITSU FC2160 50 10 FMIFSK 20,000 2
MATSUSHITA 50 10 FMV BW: 15MHz
SONY 50 20 FSK 30,000
POINTJ1-TO-POINT Millimeter-Wave Communication systems- v'innre Data
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REQUIREMENTS FOR AN 'AEGOBSTACLE WARNING SYSTEM
Output power 35 mW
Frequency 94 GHzS DETECTION OF CABLES AND WIRES WITH
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A NEW PASSIVE MICROWAVE SCANNER FOR
AIRBORNE MEASUREMENTS OF MARITIM OIL
POLLUTIONS
K. Cruener
DLR, Obcrpfaffcnhofen - Germany
A New Passivel-Ncrpwave Linescannerfor Airborne Measurements of Maritime Oil Pollutions
K. Griner, G. Kahlisch, H. Schreiber, P. Sliwinski* B. Vowinkel
German Aerospace Research Establishment (DLR), Oberpfaffenhofen,FRG* University of Cologne, Cologne,FRG
Abstract opcratcd optical and active microwave scusors in parallelto a multitudc of microwavc radiomcters (iinescanncrs
Ancwpassivemicrowavclincscanncr has bccn developcd and profilcrs). The gcneral aim of these cxerscs was tothat will be used for airborne operational mcasurcmcnts cstablish specifications for an improved operational scn-of maritime oil pollutions. Thc systcem consists of two sor package for quantitative rcgistration of oil pollutionoffset rotating parabolic mirrors and two radiometer scts, at sca undcr nearly all-weathcr conditions.where each set contains threc radiomcters at 18.7, 36.5 In 1989, the German Ministry ofTraffic decided, to realizeand89GHzc enn qucucy.A ftLhcr89GHzradiomc- a new maritimc surveillance system on board a moderntLrisusedforthcmeasurementofthcaveragcradiomctric Do228 aircraft [4]. In addition to improved scnsors util-sky tmeip ture. Th system is ontinuousy calibrated by ized up to this time in the first gcocration aircraft, thc new
'the use of a "hot load' at ambient tcmpecratur and a system will include newly developed sensors, a LaserpClticr cooled 'cold load". A computer system allows Fluorosensor and a multiple frequency microwaveonline data reduction for the estimation of the amount of radiometer which allow a morc thorough analysis of oiloil on the sea surface. spills. This includes a quantification of the spilled volume
over a range covering small discharges up to accidcntalevent% and the classificatiou of oiltypes.
L IntroductionIL The New Radliomder
Pollution of the sea has increased up to levels which cafaresult in severe risks for the marine ecosystem. High loads A. Rcquirtnentsof oil have been observed in many coastal wates. Inaddition to the procurement of'oil combating ips', this Th Archimd exercises offered a unique chance tosituation has led to the demand for airborne sureying studyradiomctcroutputsinthe5GHzto90GHzrange formethods for providing helpful data for oil spill dcan-up different types of oil and oilwater emuisions of varyingoperations following accidental discharges, and to moni- thickness (up to several millimet r) during a variety oftor the legal aspects of per.mat ontributions to an- realitic environmental condatiom A series of findingstime W oltos resulted which, together with some operational restraintsIn Europe, aircraft equipped with remote scsing instru- are now forming the basis for the development of the newmeats haw been provided in various countries in the radiometer.Indetail, basicrcquirmcntsforaradiometerperod 1983-19M8 for a regular survey of coastal waters of second generation armand, in view Of a sCMor systcm of second generation, for - sie. ous mcasurcmcts at several frequencies tothe purpoe of basic research. Since 196, for example, avoid ambiguity problems during the determination oftwo Dornier Do28 aircralts equipped with an IRAW laye tickness and, above all, the oil volume; an errorLi.acanner, a Side Lok in Airborne Radar (SLAR) of volume estimation smaller than 5D% is tolerated,and a scanning 35GHZ-Radiomcr have been flown inthe German- rspoombtareas of th North Sea and the - selectin of frequency bands with reference to possiblcBaltkic Sea, aiming at a coatinuous surveillance of mari- interferceces due to man-made noise and regitrationtime pollution and an improved guidance of oil combat- of oillayer thickness in the 50#m to 3mm range,ting operations. In 1983,1985 and 1988, under thesponsorhip of the European Community, a seris of - simumanous regstration of the sky radiation at leastinternational airborne cxerciscs took place in the North at the highest fr quency band which is the most seasi-Sea (Archimedes Campaigus [1-3D. Different institutions tivcou with respect to variatin oafwcathr conditions,
MS 199 EEEMTS tmalh l b wa Sympoumn. Jun 14,1992 Afaquuqus * Nw Mxico. USA
2
- a scan angle as large as possible to realize wide scan In general, for optimum data evaluation, the sky radiationwidths. which influences the linescanner "uput should also I-
- aspaialresluton s hghas ossbleundr te po- constandymapped with a separte sytem in all frequent.Vis a f sptiaesltn m aim asoposable ndcnsr the o bands. But for simplification and cost reduction only oneraioofetemamu toer abcagleegh:8m dmins(r h furtherC9Hz radiometer with a fixed sector-horn anten-
radlmetr pckag (lngt:88zn, idt:S~m),na has been designed for the sky radiation measurement.- consideration of typical flight altitudes of 300m to Its output delivers a mean-value of the relevant sky radia-
1000 an air.;d veocites ear 0m/. ton which is the optimum basis for numerical estimation100G an ai~af veociiesnea 7O~s.Of the corresponding values at 36.5 and M&7 GHz. TheIL Feuncy Ranges errors resulting from that procedure are expected to be
smaller than 5D%.All requirements, listed above, have been considered-during the development of the new radiometer. 7%e cJDJmP C. The Scanning Principlestruction Of the linesanne was achieved with a compactconfiguration that realime simultaneous imaging at M, Scanning happens with the aid of two parabolic mirrors36-5 an 9 .M rqec ad eetdaer-. installed in a continuously rotating cylinder (Fg2). Bey-
anrvd 8or z Thsie eunc y barnds sethe Ariede- ond both front sides of the cylinder, identical thre-chan-campaigns, measurements at 17GHz regularly resuilted i nel-receivers are placed which are coupled to thethe best volume estimations for thicker layers. A parabolic mirrors via plane reflectors and through holesfrequency around 35GHz seems to be the best com- at the front sides. This scanning principle should be par-Promise with respect to geometrical resolution and bad ticularly advantageous with respect to operational use. itweather capability. 90GHz images are highly resolved and avid osiltn oeet f h anrfetrcomparable in quality to IR images (ig. 1). A sensitivity rttoa wthsad-urnesrdumei hdown to a layer thickness of 5qum exists. Oil-in-water case of a failure of receiver channels. Further it supportsemulion and white caps (false alarm) can be determined a simple method for cmontnuu calibration. A swathqualitatively well in thi freqcy rage widt of 476m is achieved for an ahitudeo30m (O=t).
291 26 01t D
107 1 3 30 362 1Fg L Example for the representation of passive micro- Fg. 2. perspective representation of the MWR coaLigo-
wave oil Spill measurements. Oil slick taken at ratio. developedL To parabolic reflectors in a90GTU during nigh time together with volume rotating cylinder and two receiver Xp- realmestimations (liter); altitude 4000 ft. scan width two scaines per revolutIn Thermal hotlol440.m, mxium variation of brightness sources are used for a onslamam cajibratiom.temperature 21 IL
D. The Calibratlon Principle E. Receiver Front- and Back-End Characteristics
ThU cal~bration of the radiometer output signals is done To realrm optimum radionietric resolution tota powerby using a hot load at ambient temperature and a pchticr- and hetcrodync principles are applied to all channels.cooled cold load. The hot load consists of a sheet of Balanced mizcrs arc used throughout. They show thcabsorbing material that is mounted on the inner wall of lowest noise; figures which arc, presently, obtainable withthe radiometcr main rack. As the effectivesarea of the cold commercial devices at room temperature. The receiverload is mauch smaller, a further mirror is used for focussing housings shown in Fig.2 only contain the sin*i front-endthe beams of the rotating antennas onto the cold load. modules which can be simply removed like a drawer forDuring each revolution of the cylinder a complete series better access during repair. Ilc adjustment of a singleof hot/cold mecasurements for all frequency channels is radiometer channel for calibration happens by the usc ofaccomplished. a variable offset amplifier which is placed in a seperateA cross sectional view of the cold load is shown in Fig. 3. back-end housing, Low pass filtering and AID conversionThe absorber is cooled by a 3-stage Peltier element that follow after low frequency amplificaion.has a power consumption of 45W, this results in a The whole radiometer system is completely computertemperature difference of 51K with reference to the case controlled. Not only calibratioir is done automatically buttemperature. The core of the cooled absorber is made of also a system configuration on the basis of a priority listaluminum in order to get a nearly constant temperature (after switching on the radiometer). Further, during thedistribution up to the tips of the pyramids. The surface is measurements, a numerical correction of the antennacovered with a layer of absorbing material. The reflecting beamn squint angels which result from the displacement ofinn"r wall of the load case has a conical shape resulting in the feedliorns is realized. Digital processing, in addition,an incmed effective area of the cold load. This is impor- allows a continuous observation of the operational condi-tant for the 18GHz channels which have the largest beam tions of the system by monitoring and storing data such aswaist that is also somewhat off axis. The space between the physical temperatures of the housings and calibrationthe; inner wall of the case and th cold load is filled with loads, the noise fiue of the front-ends, and the gain andsmall balls of expanded polystercne in order to prevent offset voltagos of the variable amplifiers. Finally, in theconvect=o of the surrounding air and condensation of case of oil spill measurements, layrthickncss and volumewater. The overall efficiency of the cold load has been is directly processed from the received signals.datrminedwith anexltmal coldload consistingof alarge Different spatial resolutions awe obtained for the single,sheet of absorbing material cooled with liquid nitrogen, frequency bands by optimum utilization of the antenna
apertures especially at 89GHz. However an identical res-olution which would be important for an automatic un-
LMambiguous estimation of t olume could be achievedaueicly
..... ... 5In table 1, the most important radiometer characteristicsPUT DewT 0~:~aa 0 u,0v0 -we listed.
ilL FIrst Mrbarm Masuncmn
00 40O UTTM After itctmion and installation intotheaircraft, the new
. 00000::: systcm bbm Gumfor te frtim inNovember M99
tom had beendveoe for imag representation, toqualify the radiometer. The first rendis showed that theconcept of the now systemn wors vary well and that theresolutaonsmcetspeafled vales(l'ig4).Ontheother
Fag, 3. hand, a depranalysis revealed some spursuos interfr-FW 3 Prncial cnfiuraionof te cM lacs, among other thinp, due to local-oscillator radia-
tion in te M87 and 36.5GEz ranges These problemThe sky-radiometer is calibrated by the same Principle, arise from the absecm or unilines at the receiver inputsHowever here we arm using waveguide ferrite switches to which normally results in higher senitivities for well ad-switch the radiometer input to the loads. The cold load Justed devices. In view of the first measurements aboveconsists of a Waveguide absorber that is also cooled by a oilpolluted sea that are shedulded for April 1992, addi-3-stag etier elementI. tional filtering in the 18.7GHz chianuels will be a short
term solution. It is planned, however, to replace the het-
Tab. 1.Microw aye Radiometer Characteristics
Antenna
Sensor: hncmme skyradiatmetertype: rotating offset parabolic reflector sector horn
angular resolution: 0.8 /2-i0* 4MO 80a
scan-with utilized: 76" 1scan-firequency: 10 revolutionstsec -20 lines/sec..
Receiver front-udw- --.-
channel type center freq. LL noise temp.1,1r heterodyne DSB 89.0 GHz 1-3 GHz 590 K2, 2! heterodyne DSB 36.5 GHz .1-3 Glix 565 K3,3' heterodyne SSB 18.7 G~lz .6-A GlIz 550 Ksky heterodyne DSB 89.0 GMi .1-1 Glix 590 K
erodyne principle by direct receiver principle, at an ap- qdcngwledmeMtpropriate tiznecby using HEMT amplifiers in the 187and3CI5Gz ranges. We wishtopi eres our thanks to or iodstrial partun
*Krupp MaK Raschineaieu and %Wiseaudlhaftllda-tech-nische Beratungen, Dr. Hoffin". Developmnent of theWmrawave Radiometer is fianced by prut from the
e~~mn~ruflkrTechgeFRG.Wethak 0.
technik, for his continued mappart andip 4M--ESQa-e
rheArcimees Exeri ,Commission of
andOuaityor ife EL 1016EN, 228 pp. Lux-
rad~~ometer. Archmede 2Jft andrnce Commssio (rgtofb0~ 9qnidc~~~~~~eekth rersnaEout etonwt 4 rpeaK~ntermmuniSnes, Seis:Evromn
straion resluton cpabiityand righnes ~ Oualiy Gof ouife. ER1249 R pp S 2 M-1 Lux1
temeraur rageawate fo plluedseasu- (he Archiede Ad ei Commision ofaces.he Spurious interference byes extenal AM
MMIC TECHNOLOGY F OR COMMUNCATION SYSTEMS
M. Aikawa
NTT *Japan
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Prospects for MMIC Applications in the Communication Field
MMIC MARKET SIZE
(1) MMICs are now at the critical point fortaking off.
DIFFUSION (2) The initial application was satellitePERIOD communication systems.
WIRELESS LAN (3) Presently. digital microwave transmissionsystems are boosting the popularity of
PERSONAL COM. MMICs.
(4) The principal accelerators will be mobilecommunications, subscriber radio.
MSUBSCRIBER RADIO wireless LANs etc..
(SATELLITE cOm. ,, M IC RO W A VE TpR. )+ YEAR
Now is the critical point for taking off.
CONCLUSION
1. Uniplanar MMICs and LUFET MMICs as well as highly-integrated MMICs are
remarkably effective for the cost problem, and multi-layer MMICs are also very
promising for the next generation.
2. In addition, the uniplanar-, LUFET- and multi-layer MMICs are very suited to high-
frequency-band applications.
3. Performances / functions unique to MMICs and Compounded MMIC technology
should be studied and developed more eagerly in order to overcome the
disadvantages of MMICs, and to promote wider, more active MMIC applications in
the communication field.
I ,
NEW INTEGRATED SUBSYSTEMS FOR MILLIMETER -
WAVE APPLICATIONS
R. Funck
Dassault Electroniquc France
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1131 P.A.nOLLAND. of -Il.,'QuaSI optical Tochnoloqv for MM-Wavo Car Eketronics', Workshop 21st
[141 E.KOLLDERG,"Now Solid State Dovicos and Circuits For Millimotor Wave Applications', EuropeanMicrowave Cont 1991. pp.36-5A
[15] A.TCHAMENI,"Surfacos -61octivo-. on fr~quonco', Jou,'n6os de61udos sur los composantsmillim6triquos, Garmy-la flouat (Franco). pp.57-GO
[16] H.CAM,'Addition do puissance on ondos millini6triqus*,Journtos d'tifudas stir las composantsmillim6triquos, Carry-la Rouat (F-ranco). pp.65-68
,17] J. M.GOUTOULE."Dichroiquo millim6triquo zI grando incidence roali.-6 on photogravure'. Journoosd'6tudos stir los camposants rnillimc~tqs. Carry-lo Rouof (Franca), pp.69
[18] C.LETROU,'Concoption do filtros dichroiquos pour Io millim6triquo at to submillim6trique',Journ6os d'6ttudos sur los composants millim6trkquos Camry-lo flouat (Franca), pp.84 -87
[19] P. BOURNE, Amplificatours faible bruit A 35 0! GO GHz', Journ6os d'6tudos sur los composantsmillim6friquos, Carry-Jo flouot (Franca), pp. 39-42
[20] C.TRONCHE,.Tonctions millim6triquosA~ 30 GHz, 44 GHz,ot 90 GHz pour applications spatiaies',Journ6os dettudos stir los cornposants; millir6riuos,Carry-lo flouot (Franca), pp.1I- 16
[211 P.GAMAND,'Lint6gration monolithiquo dans lo domaino millimdtriquo".Journ6as d6tudas sur loscomposants millim6triquos, Cairry-lo FRouot (Franco)J, pp.43-46
[22] P.GAMAND,'D6voloppomont dos MMICr on gamma millim6triquo'. 2t6mas Journ6os d'6tudoMicro-andos of Espaco, Toulouso, Franc, Jan 1992, pp. 153 -156
123] B.ADELSECK. A.CLQQUHOUN,'MMIC Recoivor Modules for Frequencies up to 100 GHzMilitaryMicrowavo 90, pp.305-31 0
[24] B3ADELSECK, ot al.,'Monolithic 60 6Hz Amplifior using Low Noise psoudomorphic HEMTs",European Microwave GonI. 1991, pp.341-345
[25] G.HLDER, of al.. focont MMIC Dovolopmonts and Concopts Loading to Advancod Microwavo andMilimeter Wavo Phased Array Antennas., ESA Workshop on Advanced DoamnformingNotworks for Spaco Applications, nov.91
[26] J.I3UECHLER, of al..*Coplanar Monolithic Silicon IMPATT Transmitter'. European MicrowavoConf. 1991, pp.352-356
[27] K.M.STROHM, of a.,'Planar 100 6Hz Silicon Dotoctor Circuits*, ESSDERC'9I. Lausanne, sept1991.
NEW MILLIMETER - WAVE DEVICES REALIZATION
AND PERFORMANCE
D. Pons
Thomson - CSF LCR - France
FIELD - EFFECT TRANSISTORS FOR THE MILLIMETER -
WAVE RANGE: PHYSICAL ANALYSIS, MODELING AND
EXPECTED PERFORMANCE
G. Salnier
Universit6 de Lille • France
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IMPROVEMENTS OF GaAs MESFET
Pulse doped active ]aye:
r 1It allows to improve breakdown voltage and linearity forinstance Chu obtained 23 dB between 1P3 and Po..1 dB
.Such improvement was predicted by Hcliodore
pulse doped
*profile 10 mA/mm
0.lpm 300 f
implanted -100zo% profile JO zo
/ 10050
1profile ______ ___
S -2 -1 V05v -2 -1 ;T
*Example of result: 220 mW output power at 35 GHz (RCA)0.5 pmn x 600 pm gate.
- Highly doped In GaAs channels (Feng and Wang)
Lg 0.25 pm96 mW at 44 GHz 0.6 W/mm, in
121 mW at 60 GHz both cases
-.Pulse doped InGaAs channel : Kim
j Lg =0.25 pm ID)SS = 700 mAlmin
P0 5OmW -0.GW/mw at 60GHz.
L-Otheir improvements : AlGaAs buffer - via holes.
IMPROVEMENTS OF BREAKDOWN VOLTAGE AND PERFORMANCE
BY USING A LOW-HIGH DOPING PROFILE (Takahashi - 1991).
300 0
0
S V(V)
Device Structure. Electric field distributioin IMAX f f(Breakdown V)Structure I : Ti 300A Structure: 11 Ti 0.
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TWO - TERMINAL MILLIMETER - WAVE DEVICES
J. IFrcyer
University of Miicen - Germany
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electron energy
M M
Undopcd n+ -GaAs undopedAIGaAs GaAs
wundopcd GaAs
4.
n+ -GaAsmm
Structure and energy band diagram ofa GaAs/GaAIAs QWITT diode
t(t) - U
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*1000GaAs FUNDAMENTAL
100
E*: AC'h
Ga As HARMONIC I.
.......... :.7' 100
....FREOUENCY (GHz)
Cw-output power of Gunn elements(A GaA1As /GaAs launchere InP current limiting cathode)
CU)
- 0 OE-
0 0
v-IL
00
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I(/ n<.
Al
Maximum efficiency
Impatt 20 % f < 40 GHz for GaAs devicestO % f > 40 GHz
10 - 12 % for silicon devices
Gunn 2 -5 Z for GaAs devices
5.7 % at 94 GHz for lnP devices o
(12 X at 60 GHz, pulsed, for InP
TUNNETT 2 X at 94 GHz
BARRITT 0.4 % at 60 GHz
MITATT 0.5 % at 150 GHz
,,,-. I.t)U '4
11-- 1- M -
C.31
LLa
CP a 3-
/P C2 -12 C31
Noise measure
M= F-I - u,/BI - I/G 4kTOIRDI
F Noise figureG amplification
n primary noise voltage sourceB bandwidthk Boltzmann constantTo room temperatureRD negative diode resistance
M = P f 2-- Q 94 GHz MTUNNETT 18 dB
kT 0 0MMPATT 21 dBi
P : rf power
Afrms : rms frequency deviationf0 : oscillation frequencyQex : external quality factor
Itemble shrtr
10. o lrPoer le 1 0 ni /dr bim . "
-Od 0 -mde I0
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IMPAI I dude alleloolor 60 dO isolalor level meierascillolof 1pretisioe u qt si -Oplkal
re ooetlor
Noise measurement set-up
TECHNOLOGY DEVE LOPMIENTS TOWARDS NANOMETRIC
STRUCTURES
H. L. Hartnagel
University of Darmnstadt - Germany
Basic Considerations towardsTechnology Developments Nanomotric Devices
towardsNanometric Structures
- Dimensional Reduction
H. L Hortnagei a) hot-electron transport - 0- High SpeedsTechn. University Darmstadtinst. f. Hoch trequonztechnik b) high packing densities for highly compiexMerckstr. 25 signal processing61 DarmstadtGermany c) Impedance optimization for capacitances
based on oplimul space-charge layers
) Basic Considerations towvards Nanometric for mm waves:Devices / 0
9 Seectie Eptaxyd) minimization of heat loss far currentcrowding along emitter periphery of
E-bem Lihogaphyand oftpower transistors for mm wavesElectrolytic Processes:
Anodic, Etching and Cathodic -increase of Surface to Volume Ratiometal deponition.
Loca-Stuctre epoitin b pont-ikea) no damage acceptable leading to traps
Electrode Current scanned by b) space-charge layer minimization to obtainPiezo-Actuotors. carrler-density Independent. controllable
conditions)Evaluation of Mnonetric Surfaces
) Outlook
- - (Z IL A -
Ir. *. rz
.. . .... . .. .. .
'' ~ IsS spectra of GaAS
NOPelod Oa w l emd o Nk.S A Y"$,
(flm , t th I n can toto
:eJA
- *4
4
XPS-SPECINA OF DIFFERENJLY TREATED 1100J- CAs - S06lFAtES~~~~~~~*o/ I i.. L(L6I'iiI4, *d AI kS
elmAAt 2 t aINolI-11 6 0 i) I i 4 43 1%U u 6 7
1* 1124185bod f f)Asi -fo. aatont.IsloI K -p eti @ I "Ito l " ( g t t t l . t A 1 0 4 l a l t 0 0I w t 6 4 6 6 V I
sub INlh~ t6 Hall isI 01,11 W63 Proil L M
XPS -SPECTRA OF SAMPLES TREATED BY 111tllN(S. ,,3'.:t~ Selective EPitoxYAt 2P~ Soz,, ?pbo Id A23 6431 12:1:300)
Starting with high -temperature capable amorphousmaskc
Growth required -ith good quality an side walls
Some growth role as with 'volume cage t0 allowfabrication of lateral acces structures
(theIII U Ioe. DIII 1 M 11441 lo "(. wa orhu
--- ---------- -) ..... .... ..
E-Jeam Lithography and Soft Elcctrolytic?rocesses:
Anodic Etching andCathodic Metal Deposition
I)nonometric structurizallon by electron-boom n-Bean Lh09rp y
2) gas-plasma etching through [-boam rosistpattern
a) steep -6ruclures possible H +, 60 KeV into PMMAb) but Ion bombardment spread: o.1 AiSmminimized only by protective no proximity effectgrids or plasma potential n nS
control nobockscatteringonS
3) anadic wet etching through resist patterna) side-sloepness by combined
adjustment ot bias and opt.Illumination
b) passage through verious epitaxialand doping layers by opticalhole generation as required foranodic process
E-Beamn Lithography
pos. resist
PMMA polymethyl metacrylote '-zlPBS polybutlone -1 sult one a
resulution: m SUMI
neg. resist: X ATO a
COP Polyglycidyl methacrylole-co- ethyl acrylate
resulution due to swelling: 1 upm
,rp W 4"atW 3IWVpy "t
electron scattering, 20 keV(v%-i A); proximity effect
A
*hottky- Barrier- Dioden f(~r
SSub-mm-WeIlen-MischungContinuation: Electrolytic Processes
3)c) Selection~ of electrolyte:rouction-limited solutioninstead of difluxianlimited one
d) Equal solution rotestar ooch of the componentsof the semiconductor
a) pulsed-bias
4) cathodic mnetal deposition through resist pattern
a) resulting metal thicknessproportional to local currentdensity
conaIct Whiske, (Pheit
O~~eiea O "deatt"l'se b) theref ore iltuminiation to increasecurrent flow over layers at
-oiaul LaerI ROA reduced conductivity
'0OeM Hevuiy69 c) sometimes side-wolt metaltizationHeavuily Doe voided by intermediate
SiL a," tOU~M. insulating ept layer and01fm-it C6s4ceHi t I Ndacm -3 deposition In darknessIN /AuG o/i j
Ischbeaclocheir otedeanquercpnlt
Changes of surface structure.n air after treatment bi
rted 5 ncr.1 s (f*P t p.- F measured by STM(15min between each
- measurement)
of GaAs towers __' (L
U, I.
z - .
................................................f
STU-Studies of GaAs(I0O) SurfaBces afterSi -
different etch? treatmentsSi H4 + 0,1 S1 02 +-K
lIkaline etchanL , 450*r
4: 20 2:H2 Si ( 0 C2 H , Tetraethyl fthos icate= TEOS (700-C)
-~~ (from liqui source
Si C12 H2 + 2NK,0 (9006C)- dlchlorosiiafle
nitrous oxide
hlOoChemicai Dassivation r. ,, A
then 30min N r N4C1:H20 i:1. LN-jignt) L LPC%/D 750*C
PCVO :300' C
tfinal chip passivatlon againstscratch protection. moisture
IA 2Si C2 H2 barrier, sodium barrier)
-oasivaion3 S C1 H2 + H NH 3 LPGVO)
*thien 10min in (N.H4)2S) u,.tmw Si H4 + N H3SI H, + t
41APOI' S5i (larger stability than Al)
Si ~ Si + 2Fj (600 C
Chemical Vapour Deposition 2(e.g. S10 2 to insulate multilevel metallsatiord
1) amosperic-presureCVDCont.: Electrolytic Processes C
2) low -pressure CVD
3) plasma -assisted CVD 4) d) metal sequences by 1e~eracathodic steps as requiredfor
reacor -ohmic contacts-Hot -wall reco Schottky contacts
- Low -Temperature CVD f or Si submicron techn.) 'hg sabih~letndffso
(reduced thermal broadering of dopants barrier)
by diffusion) e) selective deposition onenery -nhaned ~IQsemliconducllflg Islands Inenerg -enancedCAIDsemnlnsulativog surface in
(possible: SiO2 at 150 A/min for 50*t darknessby UN Ught : in f usdba*Chemical Vapour Deposition f usdba
1984, ed. K.D. Robinson et al
Electrochem. Soc.. Pennington, USA)
DOUBLE -REPLICA TEN PHOTOGRAPH OFH2S03: 11207 ETCHED GaAs SURFACE
-4F
DOUBLE - REPLICA TEM PHOTUGRAPH Of At - FIM SURFACE
Local Structure Deposition byPoint-like Electrode Currentscanned by Piezo-Actuators
1) Point Current Source by3) Position control by plaza actuators similar to
a) needle with Insulation except on tip Scanning Tunnelling Microscope.
,,etal 4) Combination with local etching under point
Insultingcurrent source
local cathodic,. deposition subsequent local first local
metal deposition Aetchingon ridge
b) fine capillary In conducting electrolyte : W
o cpillary filled with 5) Surface preparation by focussed-electrone[lectrolyte (SEM) or focussed-Ion Illumination for
'A". local etching with point or linemetallizations.
2) Pulsed Bias for optimization of results
flow of metallicsource In electrolyte
Direct writing of submicronmetallisation patterns on GaAs
Development of a new process for writing experimentalsetup.*;lubmicron metallisation patterns with aungsten-tip on n-GaAs in an elctrolytic Au-bath
Experimental set-up pulse generator
30w
LL teiion holder
Pt anode
electrolytic solution photoresSt-
Gla - Isolation mgec ter structured
puae -ZPt-solution
tem iperature. 40C
KAhalC~jt:1O etch rate: 4 nMJPtiSO
1--
It
(A11 I
- Soft struciurizalion
-- Local epilaxy
- relevant structure characlerizalion
Evaluation of Nanometric Surfaces will give
- mm-wove devices and IC's
- high packing densities for complex signalprocessing with short interconneclion
I) STM and Its derivatives In particular scanning delaystunneling luminescence - extension to jzm waves
2) Electron-beam evaluation - broad-band approach
a) SEM
b) Scanning beamcathodoluminescence
c) TEM. particularly at angle ortransverse; possibly with doublereplica techniques.
3) Focussed-ion techniquesincl. Ion Scattering Speclrosscopy
£1
OPTICAL CONTROL OF MILLIMETER - WAVE CIRCUITS
T. Itoh
UCLA - USA
I- c-CU L C U 0
CO a)
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Conclusion
" Coupled Negative Resistance -increase the Q value for MMIC application
" Varactor Diode -
tune the center frequency of the passband
" MESFET Varactor1. In addition to the electronic tuning, optical tuning
is realized.2. Same type of device as the active device generating
negative resistance.3. Operation in three-terminal mode is investigated.4. Show the possibility of using one active device to
generate negative resistance and tune the frequency.
RECENT DEVELOPMENTS OF NRD - GUIDE TECHNOLOGY
T. Yoncyama
Tohoku University - Japan
7HLOPORT
...........
CONTENTS
Recent Dcvclopement in NRD-GuideTechnology I. Introduction
II. NRD-Guide Integrated Circuits
Tsukasa Yoneyama 2.1 RF Front Ends at 35 GHz
2.2 Gunn Oscillator at 60 GHz
Research Institute of Electrical CommunicationIII. Proposal of Planar Antennas Fcd by Leaky
Tohoku University NRD-Guides
Katahira 2-1-1, Aoba-ku 3.1 Review of Uniforn Leaky NRD-Guides
Sendai, 980 Japan 3.2 Periodic Leaky NRD-Guides
3.3 Planar Antennas Fed by LeakyNRD-Guides
3.4 Applications
IV. Conclusions
- LSM.. Mode
........
" - LSE. Mode
-~ 'utiic e14
2
(b) (C) LSm0 1 LSEIO(gu))d wave) (radlald wave)
Fig.2 Opervtion principle of leaky wave NRDg9ide
Fg.I Claslcal tlypes of leaky wave NRD-giiodU
6
Absorber 0."
13 o•.5 9-vn Ex F.q..z .27G'ara .Iwid.3 mm
Dielectric -30 E
30 -20I
a XMetal -30 -20 -10. 0 10 20 30v plates x (mm)
I.4 L-eaky wave NRD.W htvfg enolef Ff AN AN.M pl 0 418 El6dil a teUlpsSof lAy WaSW ww haY" -011
7 3
Slots
0
m Plate0-10 b 1.7mm upper par
b= 12 mmEb,= 2.1 mm
i 20 Leaky wave -- /Absorber
" - Calculated NRO-- ----- Meosureda:
-300 20 00 bo
Fig.3 Radiation pattern of leaky Wave NRD-guide oxa eahaving trapezoid dielectric strip Plate
(b ) Lowerpar
Storucluw of leaky wave ND-guide fed planer anntena
IO
0 10z=130rwn =2.75G0Hz
93 -5 -Z=t80rwnV
-20 -10 2
x (mm)
Dliributlon of vertial component of E1field In the planarant"n
It
I-7
.90 N lt 2 z 75GHz 0 . 72 5 " *i e 2275Gi U
. - -
-ISIA
(dB)- (dB) -2
30 60 0 120 150 . . . . . . . . . . ..0 02013 60 90 1)3 ISOe(C)
(a) 0 ;r inf, 0 bi) J7 nitf
Ag Ag
(a) (b)
F~o Struchwo of Iradolds leaky wave NRDWIIff
Is
(a) (b):
F~g~ Fild dal~butona f boad~de ealy wve ND. uid
b b-5
FiFil diatriunslmn n alt~ eeet~ tut of broadside leaky~ waae NMDbguid
of noce eaae y9afawvlnt
.. .. .. . . .
Slots
0 * (q2 NR-qud
1,- t24.0Matdcfvg notch ArfM Wqnh
2.?Omm I .5m
-20
30 1 0 so i20 ISO ftlgI pmow efiw by WW bdv NRWV
ftfil Radfei PON- I Of '"UP~ Nowy WonHRIUd
mom-
U|
-=90* B 4w. Freq.=24.3GHz . e=90 8w. o" Freq.=24.3GHz
.0j -1 -0
E E, -20 ,-20 \ "
" -25 n -25-
-30 .-.-. '-30 J0o 30 60 90 120 150 180 30 60 90 120 150180
e (") # (")
Fig.12-(a) Radiation p atrn of broadside laky wave NRV- Fig.12-(b) Radiation pastern of broadsWO lky wave NRD-
guide ed planar annien.? (230xisOx7 In mm) guide fed Pnanona (2X ISOX7 In mm)
(In tha vertical plane per. Wel to the slot) (In tha vertica plane peupndlctabr to the slot)
25 26
ADVANCED DESIGN TECHNIQUES
FOR LINEAR AND NON LINEAR MMIC'S INTO THE
MILLIMETER - WAVE REGION
R. H. Jansen
Jansen Microwave • Germany
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/9/ Wertgen, W. and Jansen, R.H.: Efficient direct and iterativeelectrodynamic analysis of geometrically complex MIC and MMICstructures, Intern. Journal of Numerical Modelling, Wiley,vol. 2, 1989, 153-186.
/10/ Jansen, R.H.: Advanced CAD/CAM software for process-relatedMMIC design, Proc. ESA Workshop on MMICs for Space Applic.,Noordwijk, March 1990, paper 7/2.
/11/ Jansen, R.H.: LINMIC+, A European familiy of CAD tools for MICand MMIC design, Microwave Engineering Europe, March/April1991, 21-24.
/12/ Br6mme, R. and Jansen, R.H.: Systematic investigation ofcoplanar waveguide MIC/MMIC structures using a unifiedstrip/slot 3D electromagnetic simulator, IEEE MTT-S Digest,Boston, USA, 1991, 1081-1084.
/13/ Jansen, R.H. and Sauer, J.: High-speed 3D electromagneticsimulation for MIC/MMIC CAD using the spectral operatorexpansion (SOE) technique, IEEE MTT-S Digest, Boston, USA,1991, 1087-1091.
/14/ Jansen, R.H. and Pogatzki, P.: Nonlinear distributed modellingof multifinger FETs/HEMTs in terms of layout geometry andprocess data, Proc. 21st Europ. Microwave Conf., Stuttgart,Germany, Sept. 1991, 609-614.
/15/ Jansen, R.H.: CAD oriented spectral domain modelling ofMIC/MMIC structures, Intern. Workshop IEEE MTT/AP GermanyDigest, Stuttgart, Sept. 1991, 19-31.
/16/ Jansen, R.H.: Novel, process-related design techniques forlinear and nonlinear MMICs, 1991 Asia-Pacific MicrowaveTechnology and Education Workshop, Taiwan, Sept. 1991, paperTA3, 65 pages.
/17/ Jansen, R.H.: A full-wave electromagnetic model of cylindricaland conical via hole grounds for use in interactive MIC/MMICdesign, IEEE MTT-S Int. Microwave Symposium, Albuquerque, USA,1992, accepted for publication.
CAD OF MILLIMETER - WAVE PASSIVE COMPONENTS
IN SUSPENDED MICROSTRIP TECHNOLOGY
V. Fouad Hanna
CNET - France
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LEAKAGE AND CROSSTALK EFFECTS IN MILLIMETER -
WAVE INTEGRATED CIRCUITS
A. A. Oliner
Polytechnic University USA
ILOL)UCTION
isrcdrutglntvet . 1. insuiscoas0,en5ud *silluat-etlv-wo ssirgrates
LEAKAGE AND CROSSTALK EFIEC1'S tissl a.,rssl etuslsad even rinciui performuance. It so tlsroetwer1141 tIs tutdterstand hsow crosstalk cn bs produced a.d wImAt acinnal efrfets
IN MILLIMETER-WAVE INTEUGRI ED CIRCUITS -lit result frots iL.
k "~w..t up attstu between as tlleutt gtntlisssa at ciesrcuit. eerI.. st -, I iiea '. n. l- n U. 0ely aspitd ta each as. so that ona*as ... taeelieltl air S1e te. Ibhis tyie iii croslstslk hs been wel suderatawld faie as latic
Arthur A. Oliner listle, andt at will not Ibe discssved here. We wtill exmuinte. instead, flue crosstakI iAL rexulls frantn thet eacitation of sur/ar santo's witi ste circuit. These surfacev.55- ensn t,-sr rl lusoilsnss the esesst. laotiur. srotund. endt aue c.riausv-lscta. *aigiig lusas direct issteracsims to packiaersnacs
111'sbfeoq ttIgcrit"sPolytechnic University :istfkKC wsral Clank be eocitedl by two prinipal .siedhsatc
Btrooklyn, New York, USA (o) circuit dliscontinusiis. andiltIl.., lcakog. f"sis thet.ssioouln tlniaut motl..
The fact that stgrface waves are excitetd at traneuniossios-tine discontnsstiroa isof couirse well known, but whtat effects tltese surface waves produce line r enrstsine rid intfreqtuntly. We will discuss litre thfe conudhtians under which
New Ailtlress: - it thawis isc tad .lirsautsssuaa cats isuta'ract. witl, oilier gturtiotito of tin intergrarted Circutit.and lita,Leslnglona, Il 02173 disconitinuitiea cats excite packoige guided modes anld psackage tardty resastanst.USA Thse fact that trassiaa-lie dsosinaaf tussle ran lk becomue known only
trw yeiars figs. pritcipally as a resualt. of work by Slsifesaws. Tauji land Glimse.Teleplsuuse: 617813.1-14 Tile leakoCe occurs in Use frme of a surface woe thast proplaates swaty at anFat:- (stalle sngle front tile axis of tlte trasssion line. Far mst printed-circuit
Irasstsssiin lins. tle slansiscant mssde hecemes leoky only at Uise Isiglerflrtjisrnrsr. on tlsot leakage effects Itecane significant principally at nmilliimeterwvvelessctls. 'lle talk wsll tliecstal preciely alisen a douaissin ntntle ran liessoeleaiky, saw tile transamission line, whens it leaks, can interact with other lines andwills tlit~cntinuitirr. antI howv such leakagce can excite packogce guided modtesIolseurs kte dstsssssait. ussoltl casnnot isnteract with package guided modes when itis ptuiely lossuil.
33A Intenatoioal Worlisltjo r Iliflintcr Waves The present talk will bsegin waitt mine tuecessary ltackgrnsud malersulOrieito.i sy inolvingx various* constituent modes and thseie dispersion propertiesi. The thren
AjtriI 22-24, 1992 printed-circui linca that wes consider are miucrosteip line, slt hisa enl coplanarosresisle. We neat dicuss (lie way powee can leak from Use dominant mode sorrittet-csrcuit, lines. Its tnat connection, we first establiash when a mode can
hecaous laky, then describe thes phyyaical Properties of tile leakage, and faitaly r A~Present @evera exasoples of such leakage. After tlust. wa eolamine tile effecl a of U LI E OF TA Icrosstalk due to such leakag.eand alas to trinasunifaaion-line isiontinuities. slangtie linae indicated earlier Y WSalya leaks at juackag effects, and examine howdiscantinoutes and leakage may each insfluence package guided modes and I. IIACKGROUNjD AND REVIEWpsar"t"ct in resnane tm -1u. package a whoil..
A. Cosistittoent 11a-sic Moties on Printed-Thet stems in thet pen'15a1(tion will be on the islysiral prtsteiileo ossd [hi, Circuit Lintespeeaenass tditesietce.B. Dispersion Properties
I. Modes on prinla-ciracal Knols2Z surfisc aves
HI. POWERl LEAKAGE FROM PRINED.
CIRCUIT L-INES
A. Whsen Can a Moede Become Leaky?
B1. Physical Properties of the Leakage
C. Examples of Leakage
'Itl SOURtCES OF CIROSSTALKC
A. Waiveguitie Duscontinuities
BI. Leakage Effects
IV. PACKAGE EFFECTS
A. Guided Modes and Cavity Modes
UI. Coupling Between Leaky Modes andGuided Modes
C. Excitation by Discoatinulies
DISPERSION PROPERtTIES
CONSTITUENT BASIC MODESwavenu iber fi-ja
1. MODES ON PRINTED -CIRCUIT LINES PI = phase constantai - attenuation constant
Nlicrostrlh, Line .i irs duc to material losses, mud to leakageSlot lma losses, where appropri~ate.
Coplanlar Waveguidle (CPW%) If onliy leakamge is included, thecn a is called the
leaikage constant.2. SURFACE WAVES ON THlE SURROUNDING
SUBSTRATrEDisiwrsion means the variation of ivavcnumbcr
(They amv different when ic line doecs or does not 1ave a with frequency.
-nw pl-)
Customary to IjaLoas (Vk4 vs. frequency (or in.6..-*6,normalized form, such as Ii).)
It. 2PxA9 = frce-space wvavenumber
3. MODES OF TIlE PACKAGE Pi), r
Guided Modes and Cavity Modesc - velc~ity a( lirght in fiee space
V, .Phmawe velocity of the nUode
waveguide rontcvty
DISPERSION BIEHAVIOR OF MODES ON DISPERSION IIEJIAVIOR OF SURFACE WAVESP~RINTED - CIRCUIT LINES 1. UngroundedLayer
1. Microstrip Line--- ----
0 S F
k. Mll cdispeni%'e k.. . oft he smafsee. a
Stongly dispersiv at higher frequenciew
2. Slot Line 2. Grounded Layer
3.Colaa Waegii.. 1 slslns
If C~r ~ EXAWLES
-I - -. -- - es lsevv
7
WIIEN CAN A DOMINANT MODE DISPERSION PLOTS FOR VAIUOUS CASESBECOME LEAI?.
I. Con'ci:tor- Ija kct. slo line of CPW 4 inn -iA. ;,j|1
Suppow wUre is l ckakc
k.k. os 0 l. ,--x--- ------/'i 7: k
k . Ie.kaje at all fretences
'n Fralle-plate Ji Ac -formTherefore, for rea power to leak away we must have
or D k. 2. Con4itcbr-bnLcked slat l ine or CFW of TIen;vo ;Jt,
pike < k./ko
Example: CPW of finite width k"/k0. TM,
---- ---- -----/- k, P
At low -rreijuenises -.% ~ bouncL mode
bound 4. lk A~ove <~ k, AL <Itakale 'in su.ace
For f>fc, the dominant mode on U CAlek k wave lerma'.o
on t
17
S. Convent,'oni.l slot line or CPW 4 infin; €e w;% NORMALIZE) PIIASE AND LEAKAGE CONSTANTSOF CONDUCTOt-BACKED SLOT LINE
'-T/ ksIk
° PTH° 1.5
on;
-- P -. /--- - n(., 1
At low -Freluenc;er, 1 >- ; 6 ounJ. wove 1.2
Above ;cr. I - _ eaIk&e in suwriace11TA.ko wave ;orm, 7Mo on 1.00 . 0.570.0 0.1I 0.2 0.3 0.4 0.
4. Conventona- slot line or CPw of ; Wfe 4,wad
------------- lO"i
p rI kl*T 0 *22. hOdS.~." /k, I T0"
-- -- - - -- -------------
Y110'
At low 4rcienice, > L, boi ml Wave.k, k,
Abov F1-2I k V vo o0 o. 0.2 0.3 0.4 0.5wav t;erm,& E0
NORMALIZED PHASE AND LEAKAGE CONSTANTSFOR MICROSTRIP LINE ON AN LEAKCAGE FROM hIIGHIER MODES ON
EPSILAM 10 SUBSTRATE 51ICROSTRIIP LINE4-0
TE, .1m.oe node
2.(jIo sna e av
30~~1. -regionloe~oeo
6 * 13.0 wlI*. 1.0
E1,. 10.3Cz. 13V 100
i.0 f i n GHz0 0.1 02 0.3 0IA 0.5
0.015 'I'icsolulions ame leaky where li~e curves ame showii,Ia~.I~ hi thsat trui.n ju.s alrnvc culagedT Um. SrffW Wnvc
Itnsrver a wide r.uigc or arigic. froin emiri.' to alnwst
Inxia(Wik a-, die fre. 1.ency ck'creaaes luermi cukdt
0.01 If (here is m., (ap cover, k-akagc alga owurs jnob slace
waves wIhers I/ ko 1.
0 0.1 02 03 0.1. 05h/A.
13
WAVEGUIDE DISCONTINUITIES
What occurs physically?
SOURCES OF CROSSTALK
Top viewro
1. Waveguido Discontinuities rnriesbnp
2. Lakage Effects
1. ll1icsL-Mlsm on the line are excited, butdecay away from it, and their power isessentially storml In the neighborhood of the
dliscontinuity. They provide reactance to the
equivalent netwvork of the discontinuity.
2. The lowesgt surface wave (or waves) en tEsurrounding substrate is excited, It riulint
power in surface - wave form ever a widerange of angles, and it provides resusance totlie equivalent network of the discontinuity.
3. If there are addigtional dominannt modir there
will ho some madle conversin Into them. This
effect contributes to resisance~
COWl a. NG -IEl'V.E-FN 'IAAlY Df)IS CO U ii,-.4G III,'Mw*,EN 'LEAK ' M~ODESANI)l'AICAC UUI)EI MO)I*AND P'ACKAGE GUIDED MODES
1. We ran view Use package guided niote in tcrim or apair of surfasen waves at an angle.
zf
lpView t cs0v'lo theJl ui oiuM Lnm~ rrweent the origina
(unperturbed), transmuision line assils andl pacluage guidedtodak espctively. lla solid linin reprentUwcope ail
2. 'Ilia akg ute uieasle x-l~llyfv Ivalqin' FURtTHJERIt NPOIUI ON
tilepacageguied 11(ilenogl ( '110 wo ndalesPacliage guilad made
We halil:
01" 1 H - At Co A
"Aeakfe mode
Bounnd snade
-- A-] A
:2/
EXCITATION OF PACKAGE G.UIDED) EXCITATION OF PACKCACE CAVITYMODES BY IJSCONTINUITIES RtESONANCES I1W DISCONTINUITIES
1. Ilia dicontinuity eciles suimlfmce waves at silt angle. sodust dUtLr j) valises ringe from 0 to I.
2. Mishlreliare, at a particular fl'aqmicncy. they cats coitlipe to nlpackager guided sateills it vitiaes in tiat range, astiedlya large umbuer a(thdem.
3. Inu die alassve cicamsple. 4 package guided mmotlies am ei'il.ihaca ~ ~ ca bwd~aaiinhlumuIlec via On, suwfa wave
4. lly cnitmiuad nn ieuiedms line iniale, wills a g~iven 11 at samppalad ItY ieintabele 11e eamplimig is ordinuarily fpd.r,'e~ney, f, emilli at "UW st mile (Coupile 140) :1 Anmgle Maill, li111 gvef lage at ft" I ,h Inmaua, a packaginepackage gi1de dc and ui pemlsaps none, isolmes ii -sity msiistU For a large packagte m siosantfrarquency iwiri eifeill lat-omee dm,4Y -,am In trequemney
Thecavty . aal hem~uudiemuame eeuplng orMsmak ca nb firwsel by Introucinlmg lam. but doe
rim~mauu at a rodse end as m a m aine a emumhInrrsna, in large pariwagme
23
CROSSTALK DUB TO LEAKAGE
CROSSTALK BETW11EEN LINES ANDDISCONTINUITIES Do the cuup c
YES
iscUEM'. at a djtLwilce!Is therecrosstallk?
2. T'wo Different Linecs
NO Do thy couple?
(The surface wave hiave witvenuiners; tUst. vary firoin k. to NO0 (ur ucgLuivc) ii, tie cuanipusaen along Usic line ksagtJ 'liary
will coupleonmly if dlic h. conimlmeacist is flI. Here, 0 > It.) Wi sand 1)i ummus be dieUse srnauc furcoupsling)
U:i. ir '['lie Is ai liscuatiaaufty oat the Sconad
//~i Is there Lisle,H s s aIl t C r o s s t a l k ?
P~ACKCAGE MODES wuxIr ihAPPENS TO LEAKAGEWHEN THlE P~ACKAGE! IS FINITE?
Two types: Guided rnodcsCavity modes
Infinite width Finite width
EXAMPLE OF GUIDED MODES
If inewa lioundlaig WALt' Cumnjliz wnvenumltier Real waversuulseir
'flu^. Uer. Is a simplle arelatioun between time package Muideil Iinusishirim last it in sol quomI dhoion at
uimes aral surfaces wave, an an unbousleit aulastrate. 'lire Us imt ant sill cn cause vtalk.
am manny package guidled macls faw eacls poild e rfave
way.. If A Is large, they amr clisely tiimsl in wnvencsnblxr.
3D MODELING OF MILLIMETER - WAVE CIRCUITS
AND ANTENNAS
N. Alexopoulos
UCLA • USA
00
o W 2U) .t L.>
4-o 04
o U
U) " "~Ut
aS, -4S~3 -
o.0 w-o C -4
sn 0 C)'
CI 4-> : : . ' )
o~C -b±'fb
-43 ' U) I. 0
coplanar waveguide
microstrip diodes
microstrip filter R
Fig. Balanced mixer
2: 0*O , 77.,
0)0(n UC
C: 'D
4) <
(U;
-8 0.
Dipoles_
Fig. Lincar array of microstrip dipoles Fig Microstrip corporate feed
EnQ)0
040
~ ~ C4
o ~ ~ ( ni 0
bO 0
0- 0 CD~s.*0 CD -43
)d 43
;4 0 * -
00
0 0 U
100 20 Imilmil #2
0 .. . &GH& 8.8GHz 1 i
-10- 60
dB #3.20 -685-
* :1 950 mijl
a2 mil
1~ #4-40
0 30 40 90 120 13 g 160 mil0
Fig. 7. Allay ptaz
VSWR E#26
Fteq.acy (GHz) fo a8.5 GlHz
Fig.S. SWR skuh~quncyFig. 6. An embedded microstuip corporate feed
H-LA -
-W.80 mil
Od
Ld =442 mil, Od 1= iSl
- -- ';/IhI29miI
Fig. Electromignelically coupled] dipole red by a Inicrostripline ~ - Tile Magnaitude of fluicrostrip currenits in anl Isolated EMC dipole
co
00
CCV)
Lc)
4-
3 2
y U
"~ !
I: -- :xx., , '
Microstrip Linear Array of EMC Dipoles with a Corporate Feed
440 m&-A
I... * Relative current distribution in the output ports
0175,41 20m 9l 13.401 2.4211.22 3.1510 2.421i.2? 113.400.275, -21200 945 mdVWR .6
I *e VSWR 1.67m Directivity 5.77
0444, -22.31
0
4..23.341 Fi.1raypttr
-L L0.532, -24.3191 -34a
40"
-60..... 30 60 90 120 I; 0 ISO
S1.0 04-2.IFig. Armsy pattern
-2.35 29.d
f o 8.5 Gliz0.275. -22.34
a))
0~t E 0
C 0m
2 a 0 -) -2 - 3 2 0 - -2 -3y (wavEle'gth') y (wavelx'gths)li ;
* Computation Time
"rianxular basis functionGOAL: To calculate the matrix elements Zi(m, n ) between any
two basis functions(zI,yl) ineUior edge
where boundary .- b d edp
i,j identify type of basis function n
1, Retangular subdomains
i'j = 2, Triangular subdomains (x3.y3) (x.y)
3, Semi-infinite traveling wave modes
in, n are relative distance indices, m = [-50 : 50 1, n = (-50 SO Ref: Ran, Wilton and Glisson, AP-30, pp.409-418, May 1982
Computation time on IBM-3090 for matrix elementsFor each interior edge I., the triangular basis function is defined s
* Z,1 : 2100 sec rcd - - ,
* Z2: 3900 see (z- - z3, y - V3), , in 7.
, Z: 8500sec (.)~.xyin.-Z. otherwise
a Method-of-Momnts Expansion Functions
Basis Functions 1. Rectangular subdomain modes
f(ry ) =pC,'. (x,,) , {P WS (z )P (y )j, z -directed currents
M (z~j) =2C5 'Ai5 x~y)WS(y)P(z)i, vdireeurren
2. Triangular subdomain modesIntegral Equations
< ,(z,,j).f(z,y) > =0, 1,2,.-.,x, V,,J on microstrips R . &(4 - Z _ -_) z, in T;'
<til (z,)- 5 (xii) > =O, .=1,2,..,N, x,y onslots O,
Matrix Form ,,* ',W "l-.-. 3. Semi-infinite traveling wave modes (entire domain modes)
1z ],., [ IN = IV IN . eoilyd/., ,- I U ( Z - Z' )e *jA-.. )p (y )i, z 4reted cments
.40 14-1mle-tU (Y - ,W) iPO( )P (X W, y -directed cuirrents
Matrix Element 313,1 ;.Oo
ZLk s Testing Functions
Subdomain modes only
*Spcctral-Domain Dyadic Green's Function
Y))C~N INJT ItL. k, - (.
JUNCTION Al(~)Gn(~k)G,,.k,,
where
F(k., k,) J F(.,yk-s,?kdx,dy
Fig. I A generic structure of a four port ozicrostrip discontiniuity
DISCONTINUITIES
JUNCTIONS
AND
TRANSITIONS
CU? S'SMUWU~gy~__ fRMs 4 ii...
0-
-10 .10
-3- _ > imulwBzisFncin-30 sharpened open-end.
---0-" Rectangular Basis Function ... open-end "
..... measurement
2 4 6 8 1 12 14 16 18 20 22 24 26 4 6 S 10 12 14 16 S 20 22 246
Frequency (Giz) Frequency (G-Z)
Fig. Phase of S parpmeters of an ope3end Fig. phase of S prpmeters of , sharpened open-end and
(c,-9.9, wI24mil, hI25mii) an open-end (c,=9i.9, w-fff24mil, h-25rmil)
Basic Features Using TJ[riangular Subdomalm
I. Tcanmission li ne have inuae lengt uo.
2.~~~ ~ IdaMurn or eas ufr exctan.t
3. Thea oid ofS abdomtos is optransdated in thePxs plane to facilitatethe"."..t... .. spnde .
c statio of reaction l, mi,- .... ..'..-.. -.. '.::.,:. . .' ;-_:_-.,_,....... -.:.""t"'"(4e too &6tam t from an opnen t.o. ..be.-.. .in l e i ...- .... ...h2..'l
the grid have reactins wich at o Ism
Fig- 71i gaometry Of n opetacad Iad t sharpened opee th
07 T TZT2z0.47
0.3 mitered bend
Right-angl bend .2
,04
03O miteed bend 0.1 Rgt-angle bend
02 . This theory- This theory -.
.01 .... ouviUle and jamnes' measuarement --- Douville and Jamee measurement
-0.2i
. 10 1.2 1.4 .6 1.8 2.0 2.2 0.8 1.0 .2 1.4 1.6 1.8 2.0 2.2
.8 10f (GHz) f (GHZ)
FIX. Frequency dependence of Oo,1z suscep~ce Fig. Frequency dependence of notnlized electric length
for liabt,0n1lC and mitered bend discontinuitie for right-angle bend and mitered bend discntinities
W-.72m h-.08nm) (e,-10.8, w-4.572mrn, h-5.O8mm)
9,9, ws 2 4mla h 25mil, f 24G11
i/ncidenl wv . .
z.
ON. . . . .~."...
. . .. . . . .
OM910.
0..T0gemtyoFr000Chba ndmtrd edducmaii
sa!im!150311p puaq pal01 wI puu paaq al2au-lqsu ioi
0OO001 auui~npuo3 pn2311u0uo jo 3aUmpuadp Aamanba -9t.
z z O*Z WI 91 VI VI 0! TO
90000,(1000
-1000
putaq paialiit
P..q .:t.7q~j V00-0
~~ puaq a2I2nj91000
W001000
9100.0
WIU0PWOWI
U~t1Ufl 30 ~ jo z01mun S O 3fl~~u~4 S~ su~l~nr 31 '1D!'Dpuu3~ijo ziaao2Su0 iu
LZO 60"-. nbO1d
~AA OZ 9! tI
0 z 0. . I z .1 .3
Its
ItsW
V..- ___T______A\__
. . . . . . . . . . . . . . . .;... *'s *: 7
-160S
-2-
S31
-180
-~~ S. 333
.200"
iangular BasisMiteed tee junction
..... Rectangulaxr Basis Function -...... Tee junction
-220 - -204 8 12 16 20 24 4 8 12 16 20 24
Frequency (Gi-z) Frequency (GHz)
Fig. Phase of S33 of a basic tee junction Fig. Magnitude of S parameters of tee and mitered tee junction
(e,9.9, w=24mil, h= 25mil) (,,=9.9. w=24mil, h=25mil)
... .... . . .- .. .- .". .% V .. .. '. .. ".ij.-L..";'.. -
z.. .. , ." . J . - ....- .- :-2..,5..21
IS21
....." " ' "''::A ifw4 asi.s F n."
!'--P'..".. .. -" ......" ." ." L." !." '-,"8
•w. , .. .. ' 1.., .l I• . -; .- ..# -- .. - . -- .- .
-
.~.-147
. Meaurement
.20 " " " . . . ' " "" 6 " " " " "
4 8 12 16 20 24
Frequency (GHz)
Fig. The geometry of tee and mitered tee junctions Fig. Magnitude of S parameters of & basic tee junction(,,-9.9, w-24mil, h-2Smil)
C,.Z. - IF F - 0) ()
C... ..- 0,18A32aab0.09)r)(PF. n) (2)
TOW jko Trspaicd adilm udb-- LI Z. - CIO.l0 + 0.0083taab (oie6S!-r)j .l
23 1005 0.13 0.829 0.039 0.023
24 1.007 0.208 0.678 0.048 0.073 jz ~i~-I2lia ol2~
Table 1. power conservationl check for right-angle bend dlsColifly.(p*amters amt the oame as those in Fig. 4.)
12- 12'
10-
UI MEN = h I
S .. 0L .. . .. . j UW
6, &--j . .. .. ........
cl 102b.21,2.Sm
-~~~~~~~~~~~~ lO2 w 4i. s2nj im 0~~6~ ol-8iU
(Uuotup jejijadS)
jag *czZ lied 3poldutAsv
(Iarv-op loiiwdS)
322 )Lt *Z lied acoduAsV
oGS:og-j=U'fog!oq-j=W 'XaPU! 33UVISIP aA!]WlaJ U
ttatl=%') S!Svq Is~njuvi I )o a d Ini
saoul3unj s~svq e ummilncjiou,. cmI caRaiolaq (u lt)",Z srvilaqia uotli aqj al~~v oj
sluataa xujluw 206OCWgZ uo atuul Butindutoo 'tie--''
-sso, UOjhUIpcj Sujnfl3 joj auegd uefla3Nauj 'I 'A
'SOO 3AVA%-a3ffJftjvjnuugn JO 803 pU!143 UOIJU3)I1 'r'3.
c, Geometry of Microstrip Gap Discontinuity:
LR *9.9Z.
Sh - 25 mis
1 ' -9 9 w - 2 5S tu s
h . 2S.0 mils C," Z.. 0.64704 (pF'D) S 10 milsw . 23.5 mils C2 Z. 0.98044 (pF*Q) h
L / 7. 0.01436 (nHX)
R 17.- 0.983810 Proposed Circuit Model
Li C2
.20 cici Cr el mesueenrooelR L _
t2
.0 C
C " Zo,. 0.83355 (pFQD)40 C2 - 0.63088 (pF*Q)
C3" Z. -0.50581 (pF0)-5o-
1 14 . 0.01896 (nH/0)L2 7 -Z - 0.02196 (n -W )
KC 10 IS 2, 2r R /1-a 1.76299
Frequency (GHz,
Fig. 4 Physical Dimension and the Equivalent Circuit
Fig. 3 Comparison of the Phase of the Open-End Model of a Microstrip Gap Discontinuity
Discontinuity between the Proposed Circuit
Model and the Measured Data
1.00 ..............................
Nlicrostrip Open-End Geometry : 0.990.98
0.97.96
w0.950.93 Full-Wave Analysis
0.92 . uasi-static Value
0910.90
0 5 10 15 20 25
Proposed Circuit Model Frequency (GHz)
0
0.2ZoL 2o
R S -30
40 Circuit Model
S....Ful.Wave Analysis50 ...... Ouasl-Stalic Value
-60Fig Ph ,,sical Dimension and the Equivalent Circuit 0 5 10 15 20 25
Model of a Microstrip Open-End Discontinuity. Frequency (GHz)
Fig. 2 Reflection Coefficient of a Microstrip Open-End(c. = 9.9 , h = 25 mils , W = 25 mils)
Slot with Radial Open Ends
current sory
stripline feed
Potential Applications: Microwave and zniffizneterwave
1.00 0.5 aperture-type antenns whose geometries include0.980.96 0.4
S0.940O.92 .. '0.3 2
Po 0.90 C
0.8802 g 0.2 0BowtieS0.86 f.E0.84 - Circuit Model 0.1
0.82 .......Ful-Wave Analysis,0.80 0.0
0 5 10 Is 20 25
Frequency (r0Hz)
0 90 Log-periodic Bowtie
~4 0s o t-) 040'
o6 - Circuit Model30j
-70 Full-Wave Anialysis lI.80 10a
.901 -- 00 to is 2 25Archimedian Spiral
Frequency (0HZ)
Fig. 5 S Parameters of a Microstrip Cap Discontinuity(c z 9.9 , ht = 25 mils, W = 25 mils , sato 10 mnis)
Distribution of Magnetic Current
10* lowtie Slot Antenna
(898 edges, 2000 mil radius, 40 toil gap)
'.'/. h/~'/.1.0, blf -02. RIX, -0.947
Equiangular Spiral Slot Antenna Equiangular Spiral Slot Antenna
(t, = 1.0, b -300mirus. R = 1OO mils )(,= .L, b -30D mils. R - 1000Mills)e( * - , a =0.3063/rad, n E {O, 1, 2,3), 5 < p < 100 Mils (p - e*'al. 0.3063/red, n JO{0. 12.3), 5<P~.< 1000 ils)
,.3
Normalized Power Pattern (d0) at 8.0 GHz
120 2
5 .~ %
Frequen'cy (OHz) Frequenlcy (OHS)9rO
Axial Ratio ran.. (MD) at 5.0 0Hz
Equiangular Spiral Slot Antenna
n 0.1.2.3 0.005,R<p<R
- .020R .020R
30 Bowtie Slot Antenna with 10011 CPW Feed
(898 edges, 2000 mil radius)
Monofilar Archimedean Spiral Slot Antenna Monofflar Archimedean Spiral Slot Antenna
( 2.2, b 500 mils, w = 40 mils, 0. -, 5.81r 0.. = 8.188) (,= 2.2, b = 500 mils, w - 40 mis, 0id 5.813r. 8.9-1882')
(a +A, a 9.055 ils/ad, A7.087 Milo) ( 9+ ,G 9.055mils/rad, A 7.087 ms)
eOC -3V~
lt. 12. la 4. Normalized Power Pattern (411) 81 12.6 GizFrequency (GHz)
oo. I34 1,Ir L '
CL
CCC
II. 1& 141 . I 11 Nom lie 4oeWatr dB t1. H
Freqtrnvy (GHz) Frequency (GHz)
Axisf RAW Poner (411) at 326 Gill
Bleponenially.Tapercd Slot An~tena ------ CxrCIInll
736 edges, 2000 ani radius, wu 4Ocxp(z/700)ppsls)
Reflction Coefficient for tile Lxpomcntially-TlapciCd Slot
=MOSHE . = 5001
----- expejiment - ---- effItlmcni
kcflcclion Coefficaint, 30 Dcgrcc IBoilic IV/ Fccd llcfCClionl Coefficient for tile 10 Degree Dowtic2. - 100 z. 5m
Monafilar Archimedean Spiral Slot Antenna
(t, .08.OS b =1000 mils, wp = 254 mils, Oa~ = 5.81wo, 0_4j 8.188w
(P aO + 6, a -57.5 mails/rad, A 45 mils)
theory
Geometry of the Monlofilar Arcliimedcan Spiral Rceflcction Coefficient for the Monofilar Spiral Slot Antenna
989 edges, w=254 mnils, r..,n = 1004 muils, r_* = 1434 muils) Z. 10 tOhl"w
Monaflar Arelsimedean Spiral Slot Antenna
Monoilar Archimedoan Spiral Slot Antentux (1 2.2, b = 500 mile, we - 40 nanis. 0.. - 5.81r. G..j - jes, ~)(Rlef: Nakano, 1991 IEEE AP Symposiurn) (p - aS + 6, a - 9.055 rails/cad, A 7.087 ui)
Ito 1 a, Z - - -I
stittu edfilamentary 20 ISM, atN.tnt ouc
10 2'P~ notln feed TS ISO I ,
E rw~ cC Ot muea "Weez)
0DGD ta 4) 0
N G D
(U bi -0
-M~ 00** G
0 Wr. 0 (U
>( V';I)
GDU 0
ci -
~r. r. cc. 0
1.01
cc z
0
90 A
(U.S ~ ~~~ -0~)G *GGi
00 w
-0 A0 C
Oct0 -
0v 0
E. o E; :5 E-CU> 0 w.II~~~I
u E ,.o I "I
.0 - Cia 0) 0
0 0~0Io:. 0 Eo E co- oE
cc u , _. C w 1 -- m -
0 bu 1O
oo CL.
,) I.. E,.U '7g < ° 0
C44
cu U .) C . . 0 _
U) 410 L0w o.
0 .
a.)
00
- 0 >~o * UE
0 'U0 I
'4 f
64u 'A 0-) GD ,
0 .00
PARTECIPANTS' CONTRIBUTIONS
p0, W,I__ I toamno____on
XI even mode ciscontlnuiles , -.
7 -
..... ................ ........... ... .............. .. .. ..... ...... ... . . . . .... . . ." ) 6 -.. v . . " ",
-- 7
rectanguiar "- ut-I-N
:ubdomain modes dd mode
t~dmooe
:-q. 2.Layout of expansion modes for magnetic currents on Sjo~s
:,ucncy (GIL)
-;q. 3 The slut voltages oi even modes and odd modes in a cPV
-'rt-ance bend c=.. w=24mdls=2-1m ih=25mil)
Computational Performance
if the Arbitrary-Geometry Modeling Software , -7
on the IBM 3090 7 h
odd mode odd modeantenna no. of basis I execution time I _toraee
ltinents functions i per frequent-y I requirtul vn mode event mode
(seconds) 1(megabytes) 11
Slot Dipole 200- 500 50 -300 C - 4 :
lDowtie Slot 400- 800 250- 500 2.5 - 11
Monofilar Spiral 500- 800 300- 500 4 - 11 odd eve
Arcbimedian Spiral 700- 2000 450- 2000 8 - 64 mode Mode
Equiangular Spiral 1000. 3000 800. 3500 16- 150 1
Fig. 1. Asymmetric coplanar waveguide discontinuities
A miwtered stop A right-angle step
1.0
0.9
i4 .......
.... .... 0pn d .2 pn
S.
. .............0.2 o 4 - .
Pon2. 1
w0.m, w-O.24N,s-O21, h=0.5mm d=.w
p00.1
0.60
. Ie _ diece cur7.I ret ny G zE h
0.0i I at .00
.0.o....................
Frcquncy (~z)y directed current
F* ... oddq modelagso ve oe ndodmde nI~ jncio (,~., ~s4mt~.IVm1 yh=5) Ii.5 antd feuvln antccreti ejnto
7.
100
00
r_9uN
0Ln
==&am it it it
alll
00140
'ID
C4 0 0C ~ t ? eC5 C4 . A A
x L
U) -a
C:C
oo au V
00
0 U0
U) u.. 0
23 0. >
00
bOC ;z r.fl 0 r-.. i0 F"~
- '~ 0
m . 0 P.t
FREQUENCY DEPENDENT ANALYSIS OF PACKAGING PROBLEMSUSING TIlE THREE-DIMENSIONAL INTEGRAL EQUATIONS TECHNIQUE
II. GIIALI*, M. DRISSI*, J. CITERNE* and V. FOUAD IIANNA**
*Laboratoirc Composants et Syst6mcs pour T6l6communications
URA 834, INSA, 35043 RENNES, FRANCE**CNET/PAB, 92131 ISSY LES MOULINEAUX, FRANCE
ABSTRACTThe main problems associated with packaging technique for microwavc and millimeterintegrated or monolithic circuits are the shielding effects, discontinuity and chip connectionscharacterization. In this paper, a dynamic analysis, based on the three-dimensional integralequations technique associated with the method of moments is presented for thecharacterization of shicldcd discontinuity problems. It uses the three-dimensional Green'sfunction for a general current distribution inside a shielded box. The theory of loadcdscatterers is also used to take into account the effect of existing localized and distributedactive devices or passive loads. Using this last theory, a virtual matched load is simulated,numerically, by introducing localized absorbing loads at circuit sections c3rresponding tooutput ports. Consequently, a scattering parameters extraction technique, based on the use ofthese matched terminations, is developed, and hence the [S] parameters of the studieddiscontinuity are determined from the knowledge of only current or electric field maximawhich are often accurately determined under good matching conditions. The shielding effectson a wide range of planar and three-dimensional discontinuities are given. The behaviour of atypical chip connection as a strip air bridge is also studied and the frequency dependentcharacteristics of these discontinuities are presented.
00
g's 8 2 F7 0 .5
'0 .0 N
,a =0 .n .0
aX -u ;s -E-
-I--
@1 0 0
S. -~.: - t=Is~ E.ut5 5; a=
0 0 ~ o 0 ell
u,24's -- - . c
- =-c 0 a; o)
L5-- .o' -- o
9z '20 u 0E or~ -oc
Cd, o u 0 - c t3 o ot IP. , 0 0'4 o -
5 >: 20. 0v705 o ' u. u-- 3. .. a
2000
00 *5= 00 it
0 r cu u -y
0 0c~~n 0 r-t =t.2 .0 '.0fU'cCf4j
0Z L. ,uc
o r,. r mu-2 o 00 C,. t. a 1:or
rn ' 5- ou- ;o- qua L3 - c60 00
*~~~ ~~~~ M-0 OOll ~~O * u J U2 <
3/)~~~~ Oun 4 o O'',u.
-:U uu - 5 0"'0
as E - - -50 S
.~ ........
Fig. 4: Measured and m~odeled S-Paramecer Fig. 5: Layout of the Oscillator.in snlsiegrounded configuration(SSG).
36.25 UA
36.1
-I .1.5 -0.9 -0.05 .0.6 0 ,47S .0? *Or. .0.6
U" M
Fig. 6: Rcsonancc frequency vs gate- and drain voltage.
'3
P0 15 (dDlo) 12~4
10
.1I -0.95 -0,9 4AS5 4.8 -. 7S .0.7 .0.65 40.6
Fig. 7: Output power vs gat(-- and drain voltage.
Refereces:
I/ W. Hecinrich, "Limits or F1TT Modclting by Lumped Elemnents". E lecironacs Letters, vol. 22. no. 12, S.630-632. Juni 1986
/21 H.P. Fcldlc, "Klein- und Grolgsignal.CAD-Modclic von GaAs MESFETs mit vcrlicnt Elcmentcn",Dissertation Univcrsitat Karlsrulic, 1987
/31 G. Baumann. R. Hierl. "Modular FET model with distributed source configuration for a single anddouble side source grounded MESFEr. Ekcctronics~Uacrs, vol. 27, no. 13, S. 1128-1129, Juni 1991
/4/ K. Kutokawa. *Some Basic Charactcristics or Broadband Negative Resistance Oscillator Circuits%,Pie Bell SystcrnuTechnical Journal, Juli- August. 1969
151 George 1). Vcndclin. Design of Amplifiers and Oscillators by (lhe S-Paramctcr Method. John Wilceyand Sons, Inc.. 1982
3
