Code No: 09A30203 JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY, HYDERABAD B. Tech. II Year I Semester Examinations, May/June-2013 Electronic Devices and Circuits (Common to EEE, ECE, CSE, EIE, BME, IT, MCT, ETM, ECOMPE, ICE) Time: 3 hours Max. Marks: 75 Answer any five questions All questions carry equal marks - - - 1.a) Draw the V-I characteristics of a diode with zero cut-in voltage and equivalent resistance of 100 . Draw the load line if R L is also 100 . b) Draw the equivalent circuit of a diode circuit when a DC voltage to forward bias the diode along with an ac signal is applied. c) Differentiate between normal PN junction diode and a Zener diode. [15] 2.a) Derive expressions for ripple factor, regulation and rectification efficiency of a half wave rectifier. b) Design an LC filter for a Full wave rectifier to give 9V output as DC voltage at 100 mA current. Assume ripple factor to be 2%. c) Compare the filtering characteristics of capacitance type, choke input type and -type filters. [15] 3.a) Based on the currents flowing through a BJT illustrate the amplification process. b) Sketch the input and output characteristics of a BJT in CE configuration and discuss how of the transistor can be determined form the characteristics. c) Compare CB, CC, and CE configurations. [15] 4.a) What is the need of biasing a BJT for amplifier application? List the deficiencies of fixed bias and emitter feedback bias methods and explain how they are overcome in voltage divider bias method. b) Define stability factors for a BJT with any biasing method. Suggest a method to compensate for temperature variation effects on operating point of a BJT circuit. c) What is thermal runaway? Discuss the causes for it. [15] 5.a) Discuss the effect of V GS on drain current of a JFET based on its structure. b) Define: Pinch-off voltage, mutual conductance (g m ), dynamic drain resistance (r d ) and amplification factor (μ) for a JFET and establish a relation between them. c) Explain the operation of a MOSFET in enhancement and depletion modes. [15] 6.a) What is the difference between approximate and accurate h-parameter models of a BJT in CE configuration? Discuss the conditions applicable for each model. b) Draw the h-parameter equivalent circuit of a generalized BJT amplifier and derive expressions for A v , A i , R i and R o . [15] 7.a) Draw the circuit diagram, equivalent circuit of a JFET small signal amplifier in CS configuration and derive expressions for A v , A i , R i and R o . Make applicable assumptions and comments. R09 t and output of the transistor c , CC, configu need of biasing a BJT for and emitter feedback b ltage divider bias m actors for a BJ rature l wave pple facto rac teristics of c g through JT il haracteristics o be determi ut an put of the transistor ca , C gu need of biasing a BJT for a and emitter feedback b ltage divider bias m actors for a BJ rature l wave pple facto ra eristics of c g t ll characteristics o be determi e transi C, co of biasing a B emitter fe divider b ugh J eristic wee lati tabl ET μ) f on f amp ruct ed o JFE urre on ect uss a) for he c ? D l ru t is c) od t est hod asin with or a y fa ne s b) y ar ho d e eth k ck ck r r and xed er feedback rist he c ned be be d e sisto i of th o uss be lustrate the amplification process. l ll gh a g gh a) Based on the currents flowin [15] pe filters. or to be 2%. o ripp pp mA current. A fier wav app c sig g wi iod 00 tanc . s als ine w th l m arr ues s: 7 ax. urs ime Circ vice tron NEH HAR JA AD YDE RSIT L UN L OG EC 09 5] er d www.jntuworld.com || www.android.jntuworld.com || www.jwjobs.net || www.android.jwjobs.net www.jntuworld.com || www.jwjobs.net
and amplification factor (µ) for a JFET and establish a relation between them.
c) Explain the operation of a MOSFET in enhancement and depletion modes.
[15]
6.a) What is the difference between approximate and accurate h-parameter models of a
BJT in CE configuration? Discuss the conditions applicable for each model.
b) Draw the h-parameter equivalent circuit of a generalized BJT amplifier and derive
expressions for Av, Ai, Ri and Ro. [15]
7.a) Draw the circuit diagram, equivalent circuit of a JFET small signal amplifier in
CS configuration and derive expressions for Av, Ai, Ri and Ro. Make applicable
assumptions and comments.
R09
3.a) Based on the currents flowing through a
) Sketch the input and output characteristics of a
of the transistor can be determined form the characteristics.
c) Compare CB, CC, and CE configurations. [15]
4.a) What is the need of biasing a BJT for am
of fixed bias and emitter feedback bi
overcome in voltage divider bias method.
) Define stability factors for a BJT
compensate for temperature variation eff
) Design an LC filter for a Full wave rectifier to give 9V output as DC voltage at
100 mA current. Assume ripple factor to be 2%.
) Compare the filtering characteristics of capacitance type, choke
-type filters. [15]
3.a) Based on the currents flowing through a BJT illustrate the amplification process.
output characteristics of a
of the transistor can be determined form the characteristics.
3.a) Based on the currents flowing through a
) Sketch the input and output characteristics of a
of the transistor can be determined form the characteristics.
c) Compare CB, CC, and CE configurations. [15]
4.a) What is the need of biasing a BJT for am
of fixed bias and emitter feedback bi
overcome in voltage divider bias method.
) Define stability factors for a BJT
compensate for temperature variation eff
) Design an LC filter for a Full wave rectifier to give 9V output as DC voltage at
100 mA current. Assume ripple factor to be 2%.
) Compare the filtering characteristics of capacitance type, choke
-type filters. [15]
3.a) Based on the currents flowing through a BJT illustrate the amplification process.
output characteristics of a
of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics.
c) Compare CB, CC, and CE configurations. [15]
4.a) What is the need of biasing a BJT for am
of fixed bias and emitter feedback bi
overcome in voltage divider bias method.
-type filters. [15]
3.a) Based on the currents flowing through a BJT illustrate the amplification process.
output characteristics of a
and establish a relation between them. and establish a relation between them. and establish a relation between them. and amplification factor (µ) for a JFET and amplification factor (µ) for a JFET and amplification factor (µ) for a JFET and amplification factor (µ) for a JFET
on drain current of a JFET based on its structure. on drain current of a JFET based on its structure. on drain current of a JFET based on its structure. on drain current of a JFET based on its structure. on drain current of a JFET based on its structure. ) Discuss the effect of V) Discuss the effect of V5.a) Discuss the effect of V
) What is thermal runaway? Discuss the causes for it. [15] ) What is thermal runaway? Discuss the causes for it. [15] ) What is thermal runaway? Discuss the causes for it. [15] ) What is thermal runaway? Discuss the causes for it. [15] ) What is thermal runaway? Discuss the causes for it. [15] ) What is thermal runaway? Discuss the causes for it. [15] ) What is thermal runaway? Discuss the causes for it. [15] c) What is thermal runaway? Discuss the causes for it. [15]
with any biasing method. Suggest a method to with any biasing method. Suggest a method to with any biasing method. Suggest a method to with any biasing method. Suggest a method to with any biasing method. Suggest a method to ) Define stability factors for a BJT ) Define stability factors for a BJT ) Define stability factors for a BJT b) Define stability factors for a BJT
as methods and explain how they are as methods and explain how they are as methods and explain how they are as methods and explain how they are of fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback biof fixed bias and emitter feedback bi
of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. of the transistor can be determined form the characteristics. discuss how of the transistor can be determined form the characteristics.
BJT illustrate the amplification process. BJT illustrate the amplification process. BJT illustrate the amplification process. 3.a) Based on the currents flowing through a 3.a) Based on the currents flowing through a 3.a) Based on the currents flowing through a 3.a) Based on the currents flowing through a
100 mA current. Assume ripple factor to be 2%. 100 mA current. Assume ripple factor to be 2%. 100 mA current. Assume ripple factor to be 2%. 100 mA current. Assume ripple factor to be 2%. 100 mA current. Assume ripple factor to be 2%.
half wave rectifier. half wave rectifier.
ac signal is applied. ac signal is applied. the diode along with an the diode along with an
resistance of 100 resistance of 100 . is also 100 . Draw the load line if R. Draw the load line if R
All questions carry equal marks All questions carry equal marks All questions carry equal marks
B. Tech. II Year I Semester Examinations, May/June-2013 B. Tech. II Year I Semester Examinations, May/June-2013 B. Tech. II Year I Semester Examinations, May/June-2013
Electronic Devices and Circuits
B. Tech. II Year I Semester Examinations, May/June-2013
Electronic Devices and Circuits
B. Tech. II Year I Semester Examinations, May/June-2013
Electronic Devices and Circuits
B. Tech. II Year I Semester Examinations, May/June-2013 B. Tech. II Year I Semester Examinations, May/June-2013
b) A 12 k load resistance is connected to the output of a JFET CS amplifier. If RG,
RS and CS are given as 1M , 1 k and 25 µF respectively and , rd of JFET are
listed as 20 and 10 k respectively, find the output voltage for a sinusoidal input
of peak 0.1 volts at 2 kHz frequency. [15]
8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain
its principle of operation.
b) Name the device exhibiting negative resistance region in its V-I characteristic.
With suitable diagram explain the operation of this device.
c) Discuss the constructional details of SCR and Schotky barrier diode. [15]
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s of SCR and Schotky barrier diode. [15] s of SCR and Schotky barrier diode. [15]
e operation of this device.
s of SCR and Schotky barrier diode. [15]
e operation of this device.
s of SCR and Schotky barrier diode. [15]
e operation of this device.
s of SCR and Schotky barrier diode. [15]
With suitable diagram explain th
c) Discuss the constructional detail
With suitable diagram explain th
c) Discuss the constructional detail
With suitable diagram explain th
c) Discuss the constructional detail c) Discuss the constructional detail
sistance region in its V-I characteristic. sistance region in its V-I characteristic. sistance region in its V-I characteristic. sistance region in its V-I characteristic. ) Name the device exhibiting negative re) Name the device exhibiting negative re
its principle of operation.
) Name the device exhibiting negative re
its principle of operation.
) Name the device exhibiting negative re b) Name the device exhibiting negative re
8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain 8.a) Which type of diode capacitance is utilized in varactor diode operation. Explain
