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Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS

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Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS. Marlon Barbero – Centre de Physique des Particules de Marseille [email protected] 13 th Topical Seminar on Innovative Particle and Radiation Detectors 7 - 10 October 2013, Siena, Italy. - PowerPoint PPT Presentation
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Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Marlon Barbero – Centre de Physique des Particules de Marseille [email protected] 13 th Topical Seminar on Innovative Particle and Radiation Detectors 7 - 10 October 2013, Siena, Italy
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Page 1: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades

based on HV-CMOS

Marlon Barbero – Centre de Physique des Particules de Marseille

[email protected] Topical Seminar on Innovative Particle and Radiation Detectors

7 - 10 October 2013, Siena, Italy

Page 2: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 2

ATLAS tracker upgrade plan

New insertable b-layer (IBL)

New Al beam pipe New pixel services

Fast TracKing (FTK) for level2 trigger

All new tracker (baseline: long strips /short strips / pixels) Possible level1 tracker

New insertable b-layer (IBL)

New Al beam pipe New pixel services

IBL: On-going construction phase!

Page 3: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 3

HL-LHC environment challenge

• HL-LHC targets: – 14TeV; Luminosity: 5.1034 cm-2.s-1 / 3000 fb-1 in ~7

years

• Consequences for trackers:– High radiation for the innermost layers (~5cm):

• ~1.1016 neq.cm-2 / ~1GRad rad-hardness!(note: ~50-100MRad at 25cm)

– High occupancy:• cope with of order <140> pile-up events / bunch-

crossing high granularity! fast!– Huge surface to cover:

• of order 200m2 reduction in costs!

Page 4: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 4

Using Hybrid Detectors• Hybrid detectors:

– n-in-n or n-in-p with reduced drift distance (3D or thin silicon).

– DSM rad-hard IC (a la IBL FE-I4 -130nm- or reduced feature size 65nm?).

– Valid option: should work (after development).– Drawback: 1- Price of hybridization / of non-standard

sensors (yield?) and for a large area. 2- Will stay rather thick.

3- High bias voltage. 4- Deep charge collection leads to difficult

2-track separation in boosted jets.

Page 5: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 5

Principle of HV-CMOS process

• An n-well in p-substrate diode, populated with CMOS (first stage amplifier or more complex).

n-well in p-substrate diode

n-well biasing

CMOS! e.g. 1st stage amplifier

depletion zone around nwell: charge collected by drift

resist~10Ω.cm

Page 6: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 6

ATLAS HV-CMOS Collaboration

• Bonn University: M. Backhaus, L.Gonella, T. Hemperek, F. Hügging, H. Krüger, T. Obermann, N. Wermes.

• CERN: M. Capeans, S. Feigl, M. Nessi, H. Pernegger, B. Ristic.• CPPM: M. Barbero, F. Bompard, P. Breugnon, JC. Clemens, D.

Fougeron, J. Liu, P.Pangaud, A. Rozanov.• Geneva University: D. Ferrere, S. Gonzalez-Sevilla, G. Iacobucci,

A. Miucci, D. Muenstermann.• Goettingen University: M. George, J. Grosse-Knetter, A. Quadt,

J. Rieger, J. Weingarten.• Glasgow University: R. Bates, A. Blue, C. Butter, D. Hynds.• Heidelberg University: I. Peric (original idea).• LBNL: M. Garcia-Sciveres.

Page 7: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 7

Process Main Characteristics

• CMOS electronics inside deep n-well.• Negatively biased substrate leads to ~8-10μm depletion zone charge

collection by drift.• Small feature size + relatively low complexity of in-pixel logic small

pixel.• 1st stage signal amplification on-sensor (low capacitance low

noise).• Featuring: 1- electronics rad-hard (DSM technology).

2- sensor rad-hard (small depletion depth, small ΔNeff).3- low price (standard CMOS process).4- low material budget (can be thinned down).5- low maximum bias voltage (moderate substrate resistivity).6- fast (electronics on sensor).7- good granularity (1st prototype 33×125μm2, can go down).

• HV2FEI4p1/-p2 in AMS180nm HV-CMOS.

Page 8: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 8

HV2FEI4 series• -p1: Proof of principle.• -p2: Rad-hardness enhanced.• 2.2×4.4 mm2.• 60columns×24rows.• pixels: 33×125μm2.• pads to realize various operation modes:

– Standalone measurement possible.– CCPD: Capacitively coupled to pixel IC.– Bonded to strip readout IC.

pixel array w. transmission pads

strip pads

IO for CCPD

IO for strips

Page 9: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 9

Readout -a la strips-• Readout: use HV-CMOS sensor in

combination with existing powerful IC by connecting HV-CMOS pixels in various ways.

• e.g. pixels can be summed up as “virtual strips”, with hit position encoded as pulse height.

Pixel hit map from strip information (note the shadow of a wire)

0,0 0,5 1,0 1,5 2,0-20

0

20

40

60

80

100

120

140

160

180

Cou

nts

Measured analog address [V]

Page 10: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 10

Readout -with larger pixels-• Combine 3 pixels together to fit one FE-I4 pixel (50×250μm2),

with HVCMOS pixels encoded by pulse height.

• Capacitive coupling OK: gluing!(perspective to avoid bump-bonding?)

The tiny HV2FEI4p1 prototype glued on the large FE-I4

Page 11: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 11

HV2FEI4p1 on FEI4

• 90Sr-source.• Readout through FE-I4.• kHz rate recorded!

Page 12: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 12

Sub-pixel encoding principle

• Works on single pixel cells.• Sub-addresses well separated in ToT histo.

Three values for the addresses decoded by the FE-I4 pixel

unirradiated sensor

Sub-pixel 1

Sub-pixel 2

Sub-pixel 3

3 sub-pixels on

Page 13: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 13

HV2FEI4p1• Recorded routinely 90Sr and

55Fe spectra.

• Degradation at 80MRad proton irradiation (dead at 200MRad!)

Discri

Page 14: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 14

occupancy in 10 minutes

Bulk damage• Small depletion depth + Neff > 1014.cm-3 bulk rad-

hard?• Non-ionizing radiation at neutron source (Ljubljana)

to 1.1016 neq.cm-2.

leakage current increase(as expected)

sensor works at room T after 1016 neq.cm-2. (scintillator trigger used)

Note: 30 days annealing at room temp

No source

With 90Sr

Page 15: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 15

TID issue HV2FEI4p2• Few pixel flavors with enhanced rad-hardness: guard

rings, circular transistors… (different pixel types lead to different gains -expected-).

“rad-hard” “normal”

55Fe spectra, unirradiated

different gains

Page 16: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 16

TID issue HV2FEI4p2• After 862 MRad Xray (annealing included 2h at 70C

each 100MRad), after parameter retuning, amplifier gain loss recovered to 90% of initial value

Recovery at 862 MRad (NOT 900MRad)

Relative preampli amplitude variation as function of dose

Page 17: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 17

Conclusion• Principle: Firmly established. Various types of readout

demonstrated, among which capacitive coupling through gluing to FE-I4.

• Prospects for: Small pixels, less material, cheaper, large area…

• Need further studies on radiation hardness, but positive indications of radiation tolerance.

• Need efficiency / spatial resolution studies test beam.

• Need optimization to establish geometry & architecture.• Discussion on new larger size prototype to realize

currently on-going.

Page 18: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 18

Outlook• Hybrid solution vs monolithic for future trackers?

65nm vs HVCMOS?• For the monolithic case, our collaboration has

started to look into other processes:

T3-MAPS (LBNL)IBM 130nm

1640 electrons (assuming collected by one pixel)

DMAPS (Bonn)ESPROS 150nm

GFMAPS (CPPM)GF 130nm

M5M4M3M2M1

Super Contact

M1M2M3M4M5

M6

Super Contact

Bond Interface

Tie

r 2Ti

er 1

(thin

ned

waf

er)

Back Side Metal

sensor

M6

Page 19: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 19

BACKUP

• BACKUP

Page 20: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

New monolithic sensors on a fully isolated substrate

20

Sr90 spectrum @ Vsub=0V (blue)And Vsub=-10V (red)

We have exploited a new CMOS substrate isolation implant to implement a monolithic radiation detector. Because the substrate is completely junction-isolated from the active wells, it can be biased at larger negative voltages than would be possible in a standard process. This not only permits true 100% fill factor but also improves the sensor performance. Preliminary results will be shown.

Spectrum of Fe55 (X-ray) and Sr90 (e-), obtained from a 10X10 single pixel.

Page 21: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

Marlon Barbero, IPRD13, Oct 7th-10th 2013, Siena 21

Outlook another 3D approach

• We submitted on June 2013 a new HV2FEI4 version in GlobalFoundries 0.13µm BCDLite technology. The chip is 100% compatible with the HV2FEI4 chip, and could be easily tested. Despite some small failures, the chip works at -30V

• The HV2FEI4 could be use on a complex and advanced monolithic 3D chip, including analog sensor and digital post-processing parts

M5M4M3M2M1

Super Contact

M1M2M3M4M5

M6

Super Contact

Bond Interface

Tie

r 2Ti

er 1

(thin

ned

waf

er)

Back Side Metal

sensor

M6

Page 22: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

17th September 2013, Future Pixel FE meeting 22

EPCB01 – Depleted monolithic pixel chip EPCB01 – Depleted monolithic pixel chip Features: Technology: ESPROS

Feature size: CMOS 150 nm

High resistive N-type bulk (~ 2 kΩ cm)

High voltage at sensor domain possible (~ 10 V)

P-type well to integrate CMOS electronics

6 metal layers

Chip is thinned down to 50 µm

New Physicist’s dream??

Full depletion can be achieved

Page 23: Rad-Hard Active Pixel Sensors for HL-LHC Detector Upgrades         based on HV-CMOS

17th September 2013, Future Pixel FE meeting 23

Source scan

Fe55

Fe55 used for calibration of Sr90 plot

Sr90 MPV ~2400 electrons

(~ 4200 electrons expected for

~ 50 µm silicon)

→ rest of the charge is collected by

other pixels (clustering)


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