R&D at IMB-CNM for future accelerators

Haga clic para modificar el estilo de texto del patrónR&D at IMB-CNM for future accelerators

Manuel LozanoGiulio Pellegrini

New Detectors R&D Meeting. Madrid, Dec 2009

I+D en el CNM/IMB para futuros aceleradoresManuel Lozano & Giulio Pellegrini

CNM Clean Room expansion From 1000 to 1500 m2 New equipments ready with partial coverage for 15 cm

(6’’) wafers We plan to do prototype runs of simple detectors in 6’’

in 2010

IFCA

New ion implanter for 6’’



Radiation Detector Group

PhD Manuel Lozano Enric Cabruja Miguel Ullán Giulio Pellegrini Celeste Fleta David Quirion Marie Ruat

Techniciens David Almansa Joaquín Rodríguez

PhD students Sergio Díez Juan Pablo Balbuena Daniela Bassignana Consuelo Guardiola

Incorporation of a CPAN Engineer and a CSIC Electronic Technician

Increased technical capacity

Better position to afford GICSERV projects.



R&D in radiation detectors at CNM

Collaboration with other Spanish Groups IFIC IFAE IFCA

University Santiago de Compostela

University Barcelona



IFIC

ALIBAVA detector readout system ALIBAVA Telescope Modules for ATLAS upgrade



ALIBAVA: A readout system for microstrip silicon sensors

System finished 20 units already distributed 20 more units manufactured

Upgrade for test beam telescope Upgrade for ethernet connectivity



Modules for ATLAS upgrade

Study of radiation hardness of 0.25 µm SiGe BiCMOS technologies from IHP (Germany)

Study of radiation hardness of LDMOS transistors for DC-DC converters.

Understanding radiation degradation mechanisms

Simulation and modeling of irradiated devices (transistors, detectors, etc)

Embedded fanins for Endcap modules

Dummies2nd IHPtest chip

1st IHPtest chip

1st IBMtest chip



IFAE

Planar & 3D pixels for IBL and ATLAS upgrade Bump bonding packaging



Planar & 3D pixels for IBL and ATLAS upgrade CNM and IFAE are part of the ATLAS 3D Collaboration

for the IBL (Insertable B-layer) of the ATLAS Pixel detector

Collaboration being formed. MoU to be signed soon.

Ref.: O. Rohne – Vertex 2009



Bump Bonding In collaboration with IFAE Bump bonding already working Medipix and ATLAS pixels

successfully bonded Efficiency in bump-bond contact >

99.5% (aim for 99.99% or better) Now working to increase yield

and qualify the technology SET/Süss FC150 machine 1 micron placing accuracy Optimized reflow

2010 FPA Project to continue with bump bonding in FE-I4 chips with planar and 3D detectors



IFCA

IR transparent detectors Thin strip detectors for CMS and ILC 3D pixels for CMS



IR transparent detectors

In collaboration with IFCA Run almost finished

12 different detectors Common parameters:

active area= 1.2x1.5 cm2 circular window in the back metal 256 readout strips with 1.5 cm length

SiO2 thickness map (wafer 2)Strips with 3 µm Al width linesG

ICS

ER

V



Thin devices

Run already started Based on SOI wafers 100, 150 and 200 µm thick

active devices Strip detectors with integrated

fanins in double metal technology

Grooves in silicon to integrate optical fibres to measure deformation

GICSERV funded

Figure 2: Thinning of double-sided processed detectors. See text and ref. [6] for further details.

GIC

SER

V



University Santiago de Compostela

3D pixels for LHCb Thin pixels



3D pixels for LHCb

In collaboration with Glasgow University

First 3D Medipix-like sensor bump bonded to Timepix chip

Successfully tested in CERN test beam

Pion beamIndividual pion tracks

telescope DUTGIC

SER

V



Thin pixels for LHCb upgrade

First tests of bump bonding of thin pixel detectors with Timepix chip.

Detectors already manufactured at CNM Waiting for thinning and bump bonding

GICSERV funded

GIC

SER

V



University of Barcelona

Device simulation of Geiger mode APDs with Sentaurus AMS HV 0.35 µm CMOS technology. Difficulty to get technology parameters Some are deduced from technological kit, others are

estimated indirectly.



Other technologies under development

3D detectors Double side strip detectors Stripixels Active edge and trenched detectors Ultrathin 3D detector Neutron detectors Avalanche Photodiodes



3D detector technology Second institute in the world (after Stanford) in developing a 3D

detector technology Success with Medipix type pixel sensors Now we are designing of a new mask set for ATLAS pixel sensors Work done in the framework of RD50 collaboration.

Partially funded GICSERV

Electron collecting strip detectors

0

5000

10000

15000

20000

25000

0 2 4 6 8 10 12

Fluence / 1015 (1 MeV neq cm-2)

Col

lect

ed C

harg

e (e

)

Bias Voltage fixed at 150V for all irradiated samples Non-irradiated sample biased at 18V Detector’s ceramic based board temperature between

-10°C to -15°C Measured with ALIBAVA system (25ns shaping time)G

ICS

ER

V



Double side strip detectors

Double side strip detectors developed for Monash University (Australia)

Also developing double side packaging and wire bonding

Future collaboration with Universidad de Huelva for nuclear physics

Stripixels Combination of the concept of double side

reading with 3D contacts Better performace than classic stripixels Single side processing 2D position sensitivity 2N readout channels (instead of N2)

Simulations and mask design ready Wafers to be processedGIC

SER

V



Active edge and trenched detectors

Trenches used to reduce the dead area at the edge of the sensor

(also named edgeless, slim-edge, ...) Work started in collaboration with

IFAE (Cristobal Padilla) Features:

Implanted edge side Backplane and edge in the same

electrode Designed detectors:

PAD Microstrips MediPix2 Circular



Ultrathin 3D detector 10 µm thick detector Virtually no entry window Used for tracking of light particles

Neutron detectors Geant4 simulation Detector design and

manufacturing Conversion layer

deposition Used for dosimetry

Planar detector

Perforated detector

300um

Etched backside

Thin membrane

GIC

SER

V



Avalanche Photodiodes (APDs)

Power Devices and Radiation Detectors Groups at IMB-CNM have started a new research line in optoelectronic silicon detectors.

Cover the needs of the scientific community with custom made devices designed for specific applications

We have finished electrical and technological simulations

We are now designing the masks Next year we will process the devices. We plan to develop

Linear mode APDs (to use with scintillators) Geiger mode APDs high energy tracking In the future, also SiPMs

We are open for collaboration and feedback from other groups

Electric field in the avalanche zone

p

P+P+ N+

N+

N+P+

P+



GICSERV

Easy access through the Spanish “Access to Large Facilities” Program: ICTS GICSERV

New call now open until 15 January 2010 Average 70 applications, 50 accesses per call

Projects related to radiation detectors: 2009: 7 projects approved (1 rejected)

3D medipix-type detectors; Stripixels; Thin pixel detectors; Thin strip detectors; Atlas pixels with slim edge; UBM for DEPFET bump bonding

2008: 5 projects approved 2007: 3 projects approved

Big increase in radiation detector activity in CNM Clean Room

GICSERV Progam working very satisfactory



Announcement

Next RD50 meeting will be held in Barcelona (31st May, 1st & 2nd June 2010)

http://cern.ch/rd50/

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R&D at IMB-CNM for future accelerators

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