References - Springer978-94-011-7021-5/1.pdfReferences Abeles, F. (Ed.), Optical Properties of...

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SUBJECT INDEX

Abrupt junctions, 8,43, 79, 116, 139, 172, 205,264,371,508,563,722

Absorption, photons, 719,729,738,767, 826

ac drift field, 647 ac motors, 330, 964 ac parameters, 520 ac to dc rectifiers, 58 Accelerometer, 451 Acceptor, 49, 51, 80,382,411, 723,769,

771,783,826,829 Access time, memory, 554, 559, 566, 568,

572,617,620 Accumulation, carrier, 205,631,679,725 Acoustic waves, 81, 132,610,807,940,

965 Acquisition time, 526, 535 Activation energy, 440, 566, 718, 771, 791 Activators, 836 Active filters, 526, 544, 546, 583 Active loads, 261 Actuators, 553 aId conversion, 527,532-537,575,586,

612,957 Adaptive electronics, 953 Adders, 573, 689, 698, 700 Address functions, 561,570,807 Adhesion, 729 Admittance, 110,133,700,702,757 Ag (silver), 133,782, 786, 787 Ag-Bi-O-Cs,782 Ag/GaP,163 Ag-O-Rb, 782 Ag/GaS,136 Ag~-Cs, 779, 782, 783

AGe, (automatic gain control), 537 Agfa-Gevaert camera, 552 Air-mass-one (AMI), 705, 73'2, 740 Air-mass-two (AM2), spectrum, 705 Air-mass-zero (AMO), spectrum, 705 Al (aluminum), 2,82,91,98, 120, 132,

136,330,387,405,412,425,733, 739, 770, 807

AlAs, 736, 749 AlGaAs,83, 131, 270,374,733, 736,809,

833,843,845,862,885,887 AIGaP,889 AI. O. (aluminum oxide), 416,464,535,

840 Alfven waves, 947 Alignment, 516, 557 Alkali metals, 779 Alpha, 286,331,487,935 Aluminum isopropoxide, 416 AM rejection, 537 Ambipolar diffusion constant, 767 Amorphous semiconductors, 945, 948,

961,970 Amplification, 69, 74, 159, 166, 227,

277,334,343,359,365,372, 423,459,521,524,529,535, 551,586,615,668,674,696, 701,755-757,941-950,955-959, 964,971

broadband, 359, 373 chopper type, 354 computer aided design, 589 differential, 355, 376, 540, 613, 777,

953 electron beam, 82

975

976 SUBJECT INDEX

Amplification (cont.) Impatt,698 klystron, 673 maser, 168 negative conductance, 372 noise figure, 676,755,757 operational, 62, 358, 943 parametric, 137, 165, 190,672,947 reflection, 3, 72 TED, 700 traveling wave, 674 tunnel diode, 179 X band, 371,698

Amplitude attenuation, 601 modulation, 141

Analog circuits, 82, 276, 374,455,526, 575,585,612,633,949,954,955

Analog switches, 354, 777 Analog to digital conversion. See aid con-

version AND gates, 632, 687 Angular frequency, 758 Angular transducers, 891, 940 Anion, 843 Annealing, temperature, 280,410,457,

462 Anode, 282, 289,292, 309,313, 317,

631,648,682,686,696,700,702 Anodization, 416, 465 Anti-blooming concepts, 628 Antiferroelectrics, 960 Antireflection coating, 465,714,753,

760 Anti-spin breaking control, 553 Anti-stokes effect, 881, 887 Aperture, 841, 853 Arithmetic unit, 570, 577 As (arsenic), 2, 50, 80, 96, 225, 276,

739, 770 As, S" 794, 802 As, Se" 802 Arsene,737 Atmos, read only memory, 465 Attenuation, 149, 151, 192, 350,542,

544,546 Au (gold), 31, 33, 50, 53, 78-83, 96,

102-105,118,131-136,280,287, 292,309,327,331,448,465, 507,723,725,770,771,807,811

Audio circuit design, 535, 588

Auger recombination, 83, 208, 280, 289,

723,829 spectroscopy, 131, 135

Automobile electronics, 535, 540, 547,553, 584-589,872

Avalanche, 7,25-33,61, 79-84, 105, 117, 131,135,203,282-285;387,392, 456465, 508,564,566, 594,644-653,658-673,696-701,754-759, 808-813,835-837,954, 955

Avesta, computer program, 470

B, (boron), 2, 53,418,459,770 Backfield, 723, 751 Background charge, 602, 606 Backward diode, 80, 143, 178, 187, 189,

190 Backscattering,131 Ballast, 47, 279 Bands, energy, 2,3,91,133,192,208,

264,381,409,411,414,666, 674,695,716,719,783,812

Bandgap, 2, 9, 11, 26,33,50,51,91, 94,96,98,105,264,414,508, 583,705,729,738,740,749, 750,754,769,782-794,805-829, 882,955

Bandnotch,783 Band pass, 358, 613 Bandwidth, 130, 139, 141,148, 169,276,

350,355,359,374,451,460, 506,520,524,526,535,542, 612,613,638,658,670,673, 697,699,756,758,762,807

Baritt, oscillator diodes, 359, 362, 658, 694,697,698

Barriers, 85-89, 91, 93, 98, 100,103, 114,118,132,135,142,145, 187,190,192,196,264,334, 342,371,403,437,462,542, 549,592,603,605,638,639, 704,722,723,728,786,787,954

Base, 195, 196,205,280,287,294,299, 328,508,720

charge, 258, 260, 310 collector-junction, 119, 194 current, 199, 204, 215, 255, 314 doping, 723 emitter junction, 266, 521 injection, 212

push out, 223, 255, 258, 260, 261 reach through, 268 resistance, 277, 723 thickness, 205, 207, 212, 213, 221,

222,224,225,254,260,279, 285,419,508,520,720

transport, 221, 278 Battery, 548 Be (Beryllium) 828,829 Beam

strain gage, 926 laser

divergence, 853, 857,862 steering, 858, 874

Beta, 263, 281,484,493,495, 501 Beveled junction, 274, 328 Bi (bismuth), 83, 829, 883 Bias, 138, 142, 199, 253, 258, 379, 381,

386,392,398,405,443,448, 521,660,666,692,696,702

Bimos,518 Binary stage, 548 Biphase modulation, 684 Bipolar memory, 486, 513, 517 Bipolar transistors, 6, 119, 194, 199,217,

227,241,245,250,254,261,268, 274,332,348,354,371,401,418, 431,457,460,469,475,489,508, 515,522,526,531,533,536,542, 583,586,639,772,808,953

Bistable trigger, 188 Bits, logic, 516, 573,585,608,632 Bivicon, 806 Blocking contact, 794 Blooming in CCD, 628 Blue luminescence, 835 Bode diagram, 238 Boltzmann relationship, 6, 33, 41, 205,

242,264,403 Bombardment, 87,792,914 Bonds, Si-O, 410 Boolean equation, 548 Boot-strap circuit, 443 Bragg effects, 858,862, 874 Breakdown voltage, 27, 61, 71, 78, 117,

134,188,192,203,278,329, 350,372,379,392,464,508, 648,660,695,700

Broad band, 372, 542,695,811 Bubble memory, 586, 941 Bucket brigade circuits, 540, 557, 591, 632

SUBJECT INDEX 977

Bulk effects, 11,79, 139, 148, 233, 275, 441,461,462,464,475,509, 516,599,606,638,696,701, 783,802

Buried cqannel CCD, 605, 608 Buried heterojunction injection laser, 889 Buried layer, transistor, 263 Burn-out, 564 Bus drivers, 571, 626

C band, 643 C (carbon) doping, 33, 132, 790, 829, 882 CAD, 456, 458, 588, 598. See also com-

puter-aided design CALMOS, design layout program, 470 Calculators, 577, 587, 589 Cameras, 547,550,551,552,586,587,

588,639-641,806-813 Cantilever strain gage, 926 Capacitance, 1,6,7,22,23,24,28,31,56,

65,80,82,83,91,106,110,124, 131,133,136,137,139,143,145, 150,159,171,177,188,189,191, 193,201,229,233,260,297,315, 317,323,334,339,343,346,350, 365,379,382,384,402-404,406, 411,412,414,419,421,423,425, 434,435,440,441,443,456,459, 460,462,465,487,528,530,533, 535,548,550,557,584,585,589, 598,630,639,640,647,650,658, 684,751,755,760,777,798,824, 826

compensation, 521 thermally stimulated, 83 transien t spectroscopy, 81 tunnel, 190

Capacitive blood pressure transducer, 941 Capture cross section, 50, 51, 52,824,826,

886 Carbon. See C Carrier-carrier scattering, 289 Carrier collection, 715, 748

concentrations, 9, 81, 189, 196,295, 329,381,462,651,776

frequency, 373 generation, 79, 83,455 luetirne,17,40,79,275,289,292,

295,328,331,767 mobility, 381,459 multiplication, 307

978 SUBJECT INDEX

Carrier Collection (cont.) range, 801 scattering, 208, 289 trapping, 769 velocity, 222,457,646

Carry generator, 689, 700 Cascading, 358,689 Cascoding, 280, 355, 376 Catalysis, 972, 973 Cathode,282,284,286-289,292,297,306,

307,309,312,330,651,682,686, 703,785-794

Cathode-ray tube, 806 Cathode thermionic, 792 Canty, 670,679,701 CCD,469,506,507,559,592~41,812,

958-968 analog delay line, 612 analog uses, 608, 641 array, 613, 623 buried channel, 606,608,610,618,622 camera, 626, 627,641 charge packets, 598, 608, 625, 626, 632 clocking, 600, 612~18, 641 correlator, 617 delay line, 638 filters, 615, 638 germanium, 628 images, 622~24, 626, 636, 637, 640,

642 linear sensor, 630 low noise input, 639 logic, 632 memory, 557, 617,618,622,638,639,

641,642 modeling, 588, 598 noise, 610, 612 one-phase, 640 regeneration, 608, 641 registers, 622, 632 sensors, 598, 628, 632 surface channel, 602, 606, 608, 610,638 three-phase, 610 transfer efficiency, 615,617,622,638 transversal filter, 638 traveling-wave model, 598 two-phase, 638, 639, 641

Cd (cadmium), 2, 739, 828, 829,835 Cd-O, 828,829 CdO., 740 CdP., 866

CdS,416,550, 740, 743, 747, 751, 754, 769,866,885

CdS~.S, 747, 752, 753 CdS-GaAs, 747 CdS-InP, 747 CdSe, 754, 769, 794,811,866 CdSiAs. , 866 CdSnP., 866 CdTe,866,935,973 CdTe-CdS, 742 CdTe-Si, 813 CdTe-ZnCdS, 742 CdTe-ZnSe, 742 Central processing element, 573 Central processing unit, 570, 572, 589 Ceramics, 970 Cerenkov counter, 790 CH4 ,872 Chalcogenides, 809, 967 Chalcopyrites, 969 Champfer, 301 Channel, 11, 17,332,334-336,339,341-

343,346,350,378-379,381-386, 398,403,418,419,421,440,443, 448,462,505,506,590,606,776

Channeling theory, 963 Character generators, 948 Charge, 6, 222, 250, 254, 258, 277, 280,

281,387,400,404,407,564, 592,594,599,631,640,641, 672, 779, 806

in copiers, 800 injection dence, 628, 637 loss, 592, 598, 602, 605, 606 model,277 pumping in lasers, 812 storage, 56, 82, 118, 119, 135, 292,

366,370,458,466,564,772, 808

trapping, 457, 605 Charge coupled dences. See CCD Charge coupled random access memory,

585 Chemical bond, 965

polishing, 970 vapor deposition, 460,747,750,952

Chemistry books, 946, 955, 956 Chirp Z transform, 615 Choppers, 318, 330, 354,544 cm (charge injection dence), 628, 631 Circuits, 56,58,191,277,278,279,281,

283,299,307,310,318,350,359, 376,433,467,468,469,472,474, 509,513,516,587

books, 945, 949, 950,953,955,957, 961-972

protective, 238 Crrcubtor,668,670,956 C' L, 457,584 o (chlorine), 769, 836 Oamp, 119, 135 Clocking, 425, 433, 469, 471,501,506,

509,528,530,557,561,577,590, 594,599~18,641,689,777

CMOS, 423, 425, 431, 433, 443, 455-457, 459,461,467,469,494,496,498, 513-515,517,518,542,544,584, 585,839,953,962

C'MOS,433 CMOS,

analog crrcuit, 463, 518 C' L, 457,584 Darlington, 584 decade divider, 639 display driver, 584 dual depletion, D' CMOS, 465,517 dynamic power dissipation, 425, 496 electronic watches, 548, 586 frequency divider, 547, 589 inverter, 494 memory, 557, 588 noise rrnmunity, 496 packing problems, 501 parasitics, 431 planar, 425 power dissipation, 496 RAM,588 reliability, 475 ROM, 588 on~pphrre,457,460,519,588

Co (cobalt), 829, 886 CO (carbon monoxide), 872, 933 CO. (carbon dioxide), 81, 872 Coating dielectric, 806 Coaxial cavity, 650, 658, 660 Coaxial line, 542, 546, 658, 660, 873 Coaxial waveguide, 670 Cobalt silicide, 136 Cockroft-Walton crrcuit, 59 Coherence, 841 Cold cathode, 790, 792, 808, 809, 885 Collector, 119, 133, 194-198, 203-205,

SUBJECT INDEX 979

216,217,221,222,232,241,246, 250,251,254,255,258,260,261, 275,277,278,281,310,315,316, 487,508,515,772,798

Collimation, 853 Color centers, 971 Common-base, 200,241 Common-collector, 198,200 Common-emitter, 198, 200, 219, 221,235,

242, 250, 276 Common-gate, 461 Common-mode rejection, 526 Common-source, 379 Communications, 135, 355, 541, 546, 570,

588,612,641,971 Commutators, 319, 329 Comparator, 534 Complementary structures, 280,456,

457,584 Complexes

Mg-O, 831 Si-P,831

Compound semiconductors, 133, 135,743, 783,946,949,955,957,961,971

Computer-aided design, 62,83,261,263, 277,280,281,288,314,317,328, 329,341,373,376,401,434,440, 455,457,458,461,469,514-516, 518,587,589,638,651,945,949, 952,956,960,971,972

Concentrations, 70S, 749 Conduc~nce,136, 146, 151,188,336,

340,398,414,458,464,699,700, 798,810

Conduction band, 9, 381,674,695,783, 786, 787

Conductivity, 40, 131,386,437,699,754, 769, 794, 801

modulation, 40, 64,125,208,212,254, 268,295,301,312,377

Confmement, 843,847 Constants, semiconductor, 945 Contacts, 9, 80, l18, 131-136, 190,306,

416,421,425,557,587,658,666, 698,712,714,715,779,794,802, 808,837,956,958,967,968. See also ohmic contacts

Conversion efficiency, solar, 728, 748 Conversion loss, 146, 147, 191,365 Converters, 318, 586, 961

charge equalizing, 530

980 SUBJECT INDEX

Converters (cont.) HYDe, 329 image, 800 phase controlled, 330 12 bit, 527, 530 voltage to frequency, 532

Cooling, 302, 517, 968. See alBo heat transfer

Corbino disc, 908,941 Corona discharge, 800 Correlator, 132,612,908 Cost, 553, 554 Counters, 941, 951, 965 Coulomb's equation, 87 Covalent bonding, 93 CPU (central processing units), 570, 572,

589 Cr masks, 507 Crossovers, 387 Cross-point switch, 542, 587, 588 Crosstalk, 772 Cryogenics, 193, 464 Crystals, 794, 886, 945, 947,953,954 Cs (cesium), 755, 779, 783 CS3 Bi, 782 Cs,O,783-787 Cs2 Sb,782 Cu (copper), 31, 33, 81, 281, 740, 769,

826,829,836 CuInSe2 , 753 CuInSe2 /CdS, 743, 752 Current gain X bandwidth product, 757 Cu2 S, 704, 740, 748, 750,751,836 Cut-off frequency, 191, 201, 222,263,275,

277,280,281,339,346,782 Cybernetics, 954 Cycloconverters, 318, 330, 965

d-a converters, 527-530, 575, 586 Dark current, 757, 763, 771, 777, 785,

787,794,801,802 Darklines, 856, 885 Darlington transistors, 238, 276, 281,520,

544,584 Data transmission, 541, 610 dc/ac conversion, 533, 537, 646, 679 dc motor control, 318 DDLTS,866 Decoders, 433, 532, 571 Deep-channel MOS transistors, 455 Deep impurities, 50,81,82,132-136,187,

370,448,631,777,810,824,828, 884,963

Defects, 204, 379,471,472,827,837,882, 885,946,950,952,955-973

Deflection modulation, 70 Degeneracy, 850 Degradation, 191-204, 279, 281, 613, 630,

703,833,835,837,856,884,888 Delay, 261, 292, 358,433,435,443,476-

487,517,590,608-615,638-641, 666-689,779

Demodulation, 55,137,141,354,546,809 Dendritic web process, 729 Density

of packing. See packing states, 1, 102, 110, 131,410

Density modulation, electron beam, 70 Depletion, 6-11,17,28,103,105,110,112,

116,194,204,205,222,274,282-285,292,299,307,327-334,342-346,377-398,412,416,419,440, 458-466,504-516,596,598,644, 650-655,663,674,682,716-725, 749,753,757,787,798

Design rules, 472 Desorption, CsO, 792 Detectors

gamma rays, 943 gas, 933 movement, 451, 779

Detectivity, 759-763, 768-777, 808 Diacs,82 Diamond heat sink, 850 Diaphragm, pressure, 919, 943 Dielectric breakdown, 462 Dielectric constant, 6, 7, 87, 144, 153, 222,

403,406,459,776 Dielectric isolation, 476, 544 Dielectric relaxation time, 7, 8 Dielectrics, 965, 972 Differential amplifiers. See amplifiers

differential Differentiating capacitance circuit, 689 Diffuse component of sunlight, 750 Diffusion, 5, 80, 105, 131, 194, 197, 288,

303,306,315,332,342,377,416, 475,515,599,601,666,946-948, 952,954,960,965,969,971,973

Al, B,279, 723 Au, 280 barrier, 135

bit line, 559 coefficient, 4, 17,45,51,53,208,594 concentric collector, 421 Cu,753 current, 136,457, 722 depth, 392,475 doped oxide, 459 double, 280 field dependent, 695 GaAs, 658,750 Gaussian, 5 guard ring, 398 lateral, 292 length, 1,5,8, 17,40,48,79,207,267,

718,723, 732, 733, 749, 752, 773,783,788,884

lines, 469 mask,195 oxygen, 407 P,279 poly-Si, 280, 343 spikes, 204 theory, 5, 115, 131 triple, 475, 514 underpass, 387 Zn,416, 733, 749

Digital/analog conversion, 527,571, 583-586,612

Digital correlator, 506 Digital circuits, 374, 514-518, 527,583-

587,632,639,70~702,946,951,

965 Digital display, 533, 548 Digital encoding, 544 Digital multimeter, 588 Digital panel meter, 532, 585 Digital telephone line transmission, 541 Digital telemetering, 527 Digital transmission, 365,527,583 Digital voltmeter, 583, 585 Digital watch, 586 dI/dt capability of thyristors, 329, 331 DIMOS, 465 Diode. See Chapter 1

current expression, 722 ion controlled, 944 light emitting. See LEDs and lasers mixer, 366 narrow base, 8 pin,137 pnpn, 323

reference, 61 series, 670

SUBJECT INDEX 981

surface breakdown, 464 variable capacitance. See varactors

Dip emitter, thyristor, 306, 307 Directional coupler, 148, 190 Disk file, 554 Dislocations, 462,887,948,950 Dispersion, 866 Displacement sensor, 897 Display, 548, 553, 577, 584, 618, 805-813,

881,885,888,890,958,960,961, 969

Dissipation, power, 238,292,511,542, 648,658

Distributed feedback lasers, 860, 882-889 Distortion, 523 Dividers, 469, 485, 528, 548 Dijurieite, 740 DLTS (deep level transient spectroscopy),

80,824,827,866 DMOS, 419, 431, 457-463, 514, 516

strain transducers, 926,944 Domain, moving space charge, 676-702 Domains, magnetic, 908 Donors, 6, 49-51,83,106,411,672 Doping,3,17,79,81,115,188,208,

217,224, 277-292, 307, 309, 350, 392,405,406,44~448,458,504,

508,592,639,661,663,678,679, 692,696,716,736,749,754,768-771,776-784,794,815,952

Doppler radar, 143,673,697 Double injection, 946 Doublers, frequency, 187 Down converter, 190 Drain, 332, 340, 371, 373, 386, 395-404,

414,416,442-448,455-460,466, 776,777

Drnt,9, 190, 260,524,644,648 aiding fields in CCDs, 638 diode structure, 656 field, 6,208,220,601,646,722,753 transistors, 220, 221, 275 velocity, 82, 341, 343, 373, 398,647-

650,676,769 Drivers, 443, 469, 492 Dual gate devices, 346 Dual slope integration, 530, 531 Dummy collector, 485, 487 Duty factor, 820

982 SUBJECT INDEX

Dynamic clock driven memories, 559 Dynamic frequency division, 689 Dynamic gating, 330, 372 Dynamic impedance of diode, 61, 63 Dynamic logic, 501 Dynamic range, 191, 229,602,612 Dynodes, 755, 789

Early effect, 205, 254 Ebers-Moll model, 241-258, 478,487 EBS (electron beam semiconductor) ampli

fier,69-83 ECL (emitter coupled logic), 132,469,

475,517,518 ECM (electronic counter measures), 695 Edge effects, 135,602 EFL (emitter follower logic), 469, 475 Effective mass, 101 Efficiency, quantum, 830 Einstein relationship, 4, 197 Electric field, 79, 439, 644, 648, 655,

660,663, 716. See also field Electrical beta ratio, inverters, 492 Electrical interference, 962 Electrochemistry, 957, 964, 972 Electrochromic display, 806 Electrodes, 699, 779 Electrode-weigh ting, CCD, 617 Electroforming, 947 Electroluminescence, 133, 805-813, 820,

837,881-890,954-965,971 Electrolytic-ion migration, 740 Electromagnetic interference, 873, See also

noise Electromigration, 474 Electron accumulation, 410 Electron afimity, 93, 264, 270, 782, 783 Electron beams, 69, 73, 83, 275, 594,

790,797,798,946,958,970 Electron bunching, 674 Electron diffraction, 947, 965, 967 Electron diffusion length. See diffusion

length Electron drift velocity, GaAs, 674 Electron emission, 755, 779, 783, 790,

792, 808-811 Electron energy distribution, 8 Electron high energy, 343, 371,564,787 Electron hopping, 929 Electron image projection, 507, 515 Electron image storage, 800 Electron injection, 8, 194

Electron ionization, Si, 652 Electron irradiation, 78, 80, 292, 456 Electron mass, 101,666 Electron micrographs, 956-961 Electron microprobe, 133, 947,967 Electron mobility, 2, 143, 163, 375, 379,

386,431,509,692,716,723 Electron multiplication, 794. See also

avalanche Electron paramagnetic resonance, 953 Electron radiation damage, 949 Electron scattering, 455 Electron spectroscopy, 131 Electron spin resonance, 960 Electron trapping, 455, 606, 829 Electron velocity, 341, 421 Electron-beam lithography, 225, 350,

418,507,514,515,566,692 Electron-beam memory, 456 Electronegativity, 92, 93,131-135 Electronic calculators, 577 Electronic flash units, 541 Electronic ignition systems, 533 Electronic music, 957 Electronic regulation of alternator voltage,

553 Electronic tuning, 696, 697 Electronic watches, 547, 548,967 Electrons, 82, 83, 101, 189,284,288,

327,411,412,448,509,559, 594,644,646,651,652,666, 676,702,722,757,772,785-787, 794,800

Electro-optics, 701, 800, 806, 807, 810 959,960

Electrophotography, 755, 800, 809, 811 Electroplating, 947 Electrostatics, 2,50,696,800,801,963 Electrothermal interaction, 515 Ellipsometry, 130,407 Emission, 50, 85,102,106,274,787-

791,814, 815 Emission of radiation, 80, 828 Emission time, trap, 608 Emissivity factor, 60 Emitter, 119, 195-217,225,230-233,

251-258,275-287,306,312,523, 772,783,790,798

amorphous, 279 coupled logic. See ECL current crowding, 208, 213,238,254,

268

doping gradient, 217, 277 efficiency, 197, 205-208, 275-280 follower, 198,409,475,520 grid geometries, 230 high-low junction, 748 junction capacitance, 260 negative electron affinity, 779-786

Endotaxy,968 Energy band diagram, 10, 106, 264, 723,

740,961,966 Energy conversion, 189, 192,748,749 Energy gap, 2, 94 Energy payback time, solar cells, 729,

731,743 Energy state density, 3 Enhancement mode devices, 346,376-381,

395,416-419,440,457-465,492, 493,514-516,518,584,749

Epicon array, 807 Epitaxial growth, 79, 133, 144, 279, 372,

416,419,467,733,747,820, 948,950,962,966,968

EPROM, 568, 583 Erase, 800 Error function complement, 278 Esaki diodes, see tunnel diodes Escape probability, electron, 783 ESS processor, 127,584 Etching, 80, 83, 373-376,416,419,457-

458,463,476,715,792,800 Ethanol detection, 935 Exclusive - OR function, 686 Exposure control module, 552 Extrinsic semiconductors, 631,809 Eye-luminosity curve, 815

Fabry-Perot cavity, 849, 853, 857 Facet damage, laser, 856 Facsimile transmission, 541 Failure analysis, 517,703 Fairchild, F8 microprocessor, 570-573 Fairchild, isoplanar MOS, 476 FAMOS (floating gate avalanche-injec-

tion MOS memory), 458,470, 564,584

Fan-in,485 Fan-out, 425, 485,496,683 Far-field pattern, laser, 853 Fe (iron), 31, 33 Feedback, 205, 207,359,396,523-530,

613,615 Feed-forward, 520, 524

SUBJECT INDEX 983

Femto-joule, 518 Fermi-level, 1,3,8,9,85,92,93, 105,

106,119,134,174,178,193, 406, 504, 728

Ferrimagnetic tuning, 679, 697 Ferrites, 929 Ferroelectric, 463, 466 Ferroelectrics, 809, 949, 960, 961 FET (field effect transistors), 772, 949,

964-969. See also Chapters 6-8 FET

analog phase response, 440 balanced, 363 bifet op-amps, 586 books, 946, 964-969, 972 cascode, 376 differential inputs, 372 dual gate, GaAs, 343 GaAs, 173, 187,359-376,518,643,

695 ion sensitive, 944 logic, 423, 439, 692 memory nonvolatile, 585 microwave oscillators, 359 mixers, 363 modulation, 776 operational amplifiers, 457,524,386 oxide, 504 parallel, 423 parasitic, 418 photo transistor , 812 piezoelectric, 941 poly Si, 811 Schottky barrier, 366, 374 Si-gate, 457 strain sensor, 926 switches, 456 tetrode, 346 voltage regulator, 373 VMOS, 467

Fiber-optics, 365, 546, 800, 805, 811, 873,890,946

Field-aided collection, 712, 785 Field-controlled thyristor, 312, 313, 329 Field distribution, 274,328,373 Field effect mobilities, 465 Field effect transistors. See FETs Field effects, back surface, 722 Field emission, 61,81,134,792,811,

812,836 Field induced tunnel diode, 191 Field magnetic, 891

984 SUBJECT INDEX

Figure of merit, 525 Filaments, 940 Fill-factor, solar cells, 718 Films, 945, 953. See also thick iilms and

thin films Filters, 358,451,585-589,608-617,634-

641,956,957,959 Flicker, image, 626 Flicker, noise, 132, 142,673 Flip-flop, JK, 434 Floppy-disk controller, 571 FLOSS, computer aided layout program,

470,514 Fluctuation phenomena, 948. See also

noise Fourier transform, 146, 168,612,618,

638,646 Fowler-Nordheim emission, 566 Frame time, 794, 797 Free electron mass, 102 Freeze-out, shallow dopants, 631 Frequency

angular cutoff. See cutoff frequency bands, 138,643 changing, 318 dividers, 548, 589. See also dividers limitations, 277, 309, 373, 374,692 mixing, 55. See also mixing modulation, 137,696 mUltiplexing, 810 multiplication, 137,166,275 open-loop unity gain, 225, 521 oscillation, 340, 359, 650, 652, 678 response, 189, 195,201,221,225,

263,334,343,346,461,520, 601,658

shift, 610 shift keying modulation (FSK), 365

Fresnel lens, 705, 747 Fuel cells, 947 Fuel economy, 553

Ga,2,32, 133, 190,448,737,739 Gal _xAlxAs, 278, 348,363,375,748-

753,786,816,860,865,882, 884

Gal _xAlxSb, 786 GaAs, 2, 7, 9,11,28,33,71,80-96,103,

113,130-136,145, 163, 166, 171, 187-193,230,264,274-280,334, 342-350, 359-366, 372, 416, 455-466,509,518,673-679,691-705,

725,733-743,749-755,785,786 805-824,837,865,866,894,951, 954,958,959

bandgap, 2 Cs-O, 783, 785 CU,883 dielectric constant, 7 diodes, 9,78,750 doping, 2,312,465,824 electron mobility, 2 energy states, 3 epitaxial, 31, 700 Fermi levels, 9 Ge,264,270, 274 lasers, 826, 884. See also lasers passivated with AI. 0 3 , 464 poly crystalline, 753 Schottky barrier mixers, 147,163 Si,885 semiinsulating, 150, 153, 806 solar cells, 270,738 thermometry, 943 transistors, 274, 359 tunnel diode, 191 vacancy, 831 varactor, 188

GaAs04 ,416 GaAs-oxide interface, 346,459-465 GaAsl _ xPx,83,465,551,814,815,

820,833,865,866,889 GaxInl -x As, 96, 755, 807,865,887 GaxInl -xP, 96, 816, 865, 888 GaxInl _xSb, 699 Gage factor, 915 Gain, 198-201, 207-217,227-235,261-

284,316,343-375,516,521,537, 615,670-683,755,769,777,789, 790, 797-800, 809, 820

Gain-bandwidth product, 69,268,521, 542,810

Gain common-emitter, 261, 270 compression, 670 conversion, 363 FET, 365, 372 GaAs FET, 348 hFE,238 maximum available, 230 mixer, 364 open loop, 526 unilateral, 230, 668 VMOS, 421

Galvanomagnetics, 550, 943, 947,972 GAMBIT,371 Games, electronic, 587 Gamma irradiation effects, 517, 935 Gamma rays, 794, 891, 942, 943 GaN,806,810,835,887 Ga2 0 3 ,416,829 GaP,28,83,131,136,270,705,755,

790,815,820-829, 837,881-888 Gas chromatograph, 942 Gas lasers, 863 Gas sensitive devices, 449, 933, 943 GaSb, 171, 190,191,739,785,786,

865,886 GaSbxP , _ x, 816 GaSe, 866 Gate, 284-374, 433-458, 509, 590-598,

682-685,773,777 Al,516,587 amplification, 307 AND-OR,434 cantilever MOS, 451 CCD, see Chapter 10 CMOS, see CMOS FET, see Chapters 6-8 heterojunction, 376 lengths, 334, 350, 371, 386,435 metal,343,416,463,516,587,590 modulation, 371 mUltiple input, 687 NAND,433 NOR,434

Gate offset, 638 oxide thickness, 406, 506 poly-Si, 456, 594, 600, 628 protection, 461 refractory metal, 416, 463 self-aligned, 372,416,459 submicron, 376 width,349,350,384,419,423,435,

689 Gaussian, 5, 29, 278,606,853 Gauss' law, 382 Gaussmeters, 894 Ge (germanium), 2, 9, 28, 80-83, 96, 145,

170,171,177,188-193,225,229, 264,279,416,456,705,737,739, 771,828,829

avalanche photodiodes, 761 bandgap, 2 dielectric constant, 7

SUBJECT INDEX 985

doping in GaAs, 2 electron mobility, 2 Fermi levels, 9

Gettering, 50-53, 80, 81, 409 Generation-recombination, 448, 458,

466, 763, 772 Glass, 886, 970 Gold, see Au Graded junction, 45,260 Grain boundaries, 723, 747,749,753,

949 Grating, 860, 862, 888, 889 Gray-scale discrimination, 613 Green light, 815, 829 Gridistor, 376 Guard ring, 103, 116-120, 135,398,757 Gummel-Poon model, 254-261 Gunn device, 2, 31, 359, 362, 947, 957.

See also Chapter 11 Gyrator, 374, 906, 942, 944

H (hydrogen), 277,410,411 sensor, 942

h parameters, 276-281 H2 0 (water), 410, 411, 740 Half adder, 632 Hall compass, 899 Hall effect, 449,459,891-907,940-943,

967,973 Hall MOSFET, 941 Hall multipliers, 899, 908, 941 Hall synchro, 941 Handbook, Circuits, 968 Handbook, Electronic materials, 955, 964

packaging, 956 Handbook, Electronics, 952, 953,957,

960 Handbook, Engineering, 952 Handbook, Integrated circuits, 957, 971 Handbook, Physics, 953 Handbook,Physik,952 Handbook, Power transistors, 964 Handbook, Pressure transducers, 964 Handbook, Silicon rectifiers, 963 Handbook, Thick ftlms hybrid, 956 Harmonics, 55, 80, 81, 137,166,188,

660,663,666 HCI,409 He (helium), 410,705 Heat transfer, 238, 276, 281, 282, 297,

302,510,535,570,657,658, 697, 705, 968

986 SUBJECT INDEX

Helicon waves, 947 Heterode strain sensor, 942 Heteroface, solar cell, 733, 739, 752 Heterojunction, 134, 191, 264-280,374,

704,740-753,785,787,809,810, 812,835-847,887,926,950,958-969

lasers, 848-852, 949 Hf (hafnium), 131, 132 Hg (mercury), 771 Hgl_xCdxTe, 761,767,866 HgSe, 131 High frequency, 2,69,105,143,280,329-

331,346-350,371 injection, 9, 207,217,253-259,268-

279,328,329 Hilbert transform, 617 HUsum effect, 969. See also Gunn devices HMOS, 505,506,517,587 Hole, 284, 288, 411, 448, 541, 594, 647,

651,757,787 Debye length, 382 density, 43, 242, 243, 263, 266, 268 diffusion, 116 electron pairs, 412, 800 injection, 8, 132, 196,208,217,264,

286,303 length,83 mobility, 379 pulse, 648, 651 sink, 487 transport, 457 traps, 466

Holographic information, 853 Homojunction, 268, 270 Hoppmg, 929 Hot electrons, 119, 136, 189,374,455,

462,467,589,695,699,791, 806,948

Hotholes, 787 Hotspots, 204, 292-299, 306 H2 S, 935, 944 Hybrid coupler, 359 Hybrid parameters, 201, 203 Hybrid technology, 117, 136,274,276,

373,533,535,542,544,588, 589,631,642,955,967

Hydrostatic pressure, 873

ICs (integrated circuits), 134,275,276,376, 465-473,514-518,535,570,583 See also CMOS, interconnections,

memories, packaging, reliability computer aided design, 509 cost, 468, 474 defects, see defects digital logic families. See CMOS, ECL,

EFL,PL, T2L GaAs, 518 Ge,279 motor control, 552 testing, 474 yields, 468, 471, 474, 518

Ideality factor, junction equation, 9, 11, 89,98,102,121,134,718,763

IF (intermediate frequency) stages, 364, 536,583

IGFETs (insulated gate field effect transistors), 373-376,401-407,416, 434-439,455-467. See also FETs and MOSFETs.

P L (integrated injection logic), 277,419, 469-487,507-518,585-588,634

13 L, 489-491 Illumination, 761, 769, 772, 794, 798,

800 Image force, 100, 103, 135,455 Imaging, 191,460,507,608,610,622-

641,772,783,794,797,800, 806-813,885,950,957,959, 960, 962, 969

Impact ionization, 81, 395, 702, 787, 791

Impatt amplifiers, 670-676, 699-703 Impatts, 133, 359. See also Chapter 11

GaAs,362,644,658,666,673,697-703

Noise, 644 Impedance, 124,138-152,198-205,227,

350-359,403, 520-526,646-657 Imperfections, 836, 965, 967. See also

defects Implantation. See ion implantation Impurities, 2, 33,49-51,81,83,98, 133,

135,172,208,222,277,281, 409,419,448,457-466,508,631, 651,723,747,769-772,829,948, 951,967

Imrefs,8 In (Indium), 2,448,739,769 InAIAs, 816 InAs,189,416, 761, 805,808,813,865,

866, 890-894 InAsSb,865

InxGa l _xAs, 132,343,738,783,784, 786,787,808

InGaAsP,883 In,O,:Sn,751 lnP, 71, 373,679,696,752,784-787,

807,808,855,873 InP I -xAsx, 343 Inductance, 139, 140, 188,323,647 Infrared, 466, 628·648, 658,750,754,

762,769,777,805-814,816,835-839,865,870,883-886,946,952, 955-967,973

Injection, 4, 11, 17-21,43-48, 65, 84, 118,131,175,196-208,262-267, 287-289,315,455,456,484,516-518,594,630,655,697-702,840, 884

efficiency, emitter, 198,204,268-280 lasers. See lasers

InSb, 189,191,416, 739, 761, 769,808, 812,865,866,894,942

Insertion, 149, 159 Instrumentation, 949 Insulated gate structures. See IGFETs Insulators, 971. See also Sis N4 and SiO, Integrated circuits, 948, 951, 952, 954, !

955,957,961-965. See also CMOS, ECL, ICs, P L, LSI, memories, MSI, Op. Amps, T' L, VLSI, VMOS

Integrated injection logic. See P L Integrated optics, 692, 882, 883 Intel, 3000, 4040, 8080 microprocessors,

570 Interconnections, 469, 509, 557,576 Interface, 9, 80-85,98-105,116,131-134,

173,188,219,269,377-386,403, 416,457-464,491,748,785,787, 802

layers, 105,443,739,750 metal-GaAs, 135 metal-vacuum, 86 PtSi, 131 recombination, 270 SiO, -Mo, 566 SiO, -Si, 383,455,459,602,605 states, 89-93, 110, 131-133,264,343,

346,387,410-414,455466, 599~10,640,641,843,954

Interfacing, 622~28, 641 Intermetallics, 973 Intermodulation, 357-359 Intervalley relaxation, 679

SUBJECT INDEX 987

Intrinsic carrier densities, 2, 3, 115, 208, 260,405, 771

Ion beam, 946, 954,958,966,970,973 Ion implantation, 81, 82, 163, 191, 196,

225,274-280,348, 373-395,416, 448-476,514-518,605,606,628, 728,751,779,808,947,948, 950-952,962,964,967,969,971, 973

Ion mass spectroscopy, 133,973 Ion microprobe, 954 Ion milling, 857, 859, 862 Ion sensitivity, 455,467,935,940 Ionic bonding, 94,964 Ionization, 26, 28, 82, 132, 193,646,

651,759,810,829 Inversion, 381, 382, 398,412,459,518,

526,559,591,610,725 Inverters, 318, 327,328,469,487-495,

684,946 IR, see infrared Irradiation, particle, 49, 50, 78, 327,458,

715,743,749 Isoelectronic trap, 829, 830, 883 Isolation, 148, 159, 275, 279, 310, 314,

466,475,513~17,54~564,640

Isolators, 359, 883 Isoplanar technology, 489,515

Junction, 7,79,81,85,283,292,303, 757,824,948. See also Chapters 5 and 6 and capacitance, depletion, diffusion, FET.

depths, 416,440, 506 graded, 117 low-high, 17,18,80,403,722,749 induced,752 isolation, 328 metal-semiconductor. See Schottky

barriers photodetector,805 plane parallel, 117 recombination, 12 temperature, 658 thyristors. See Chapter 5

K (potassium), 779 K band, 643 Ka band, 699 K-Cs-Sb,782 Keyboards, 894 Kirchhoff's law, 484

988 SUBJECT INDEX

Kirk base thickness effect, 254 Klystron, 643, 673 Knee, SPICE parameter, 255, 259 Ku band, 189,643,699

L band, 643 Laplace transform, 970 Large scale integration (LSI), 274-281,

374,434,457-474,505-518,568, 583-589,809,945,947,960,972

Large signal response, 246, 254,261,279, 491,697,698

Laser, 323, 701,752,754,840,847,857, 873,884,888,946,959,967,988

arrays, 883, 887 distributed feedback, 860, 881, 890 gas, 863 heterojunction, 365, 375 lead salts, 873 materials, 866 modulator, 372 Nd: YAG, 785 range finder, 884

Latches, 317,461,571,683 Lateral effects

in thyristors, 292,303,306,312 in transistors, 215, 224, 261, 275-280,

387,419,506,514,520,524, 777,806

Lattice, 2, 81, 269, 509, 705, 733, 771, 787,807,843,885

defects, 78 Lead inductance, 668 Lead telluride, 812 Leakage current, 17, 25,50,281,313,332,

381,398,460,487,647,696,716, 718

LED (light emitting diodes), 2, 312, 527, 532,538,548-551,577,588,754, 792,814-820,821,826-829,887, 947,953

Lens, 507, 552 Level shifter, 261,443 Levine's model for Schottky barrier, 134 Lifetime, minority carrier, 1,5,43-51,

78-83,327,412,458-467,666, 674,767,768,771,792,802

Light emitting diodes. See LED Light modulation, 889 Light sensing, 121,551,754,772,777,

808,809,813,960

Limited-space-charge accumulation (LSA), 679

Limiting, thermal overload, 238 Linearity, 535, 540 Liquid crystal display, 527,548,585,

586,805-808,951,952,973 Liquid phase epitaxy, 733, 737, 785, 808,

827,829,857,882-887,947 Liquid semiconductors, 954,970 Lithium doping, 753 Lithography, 507, 514-518,951,967,969 Load, 276-302, 323, 492-496,535,679,

716 Local oscillator, 145-148 Lock layer in transistor, 207 Logic circuits, 188,240,280,281,387,

423-437,455-475,496-518,542, 566,572,634,641,689,692,699, 702,953,965,968,970,972,973

Low-high junctions, 722, 723, 749 LSI, see large scale integration LTX, program for LSI layout, 517 Lucovsky model, 769 Luminescence, 843, 881, 885, 973

Madistor, 911, 942 MAG (maximum available gain), 343, 359 MAGFET, 910, 942 Magnetic bubbles, 908, 949 Magnetic cores, 554 Magnetic field, 40,811,891 Magnetic materials, 950, 956 Magnetic plated wire memories, 554 Magnetic sensors, 891, See also Hall Magnetic tape, 554, 894 Magnetic tuning, 697 Magnetometer, 899 Magnetoresistive devices, 891, 908, 909,

941,944,973 Magnetrons, 643 Magnets, 894, 897 Majority carrier, 17, 114, 119, 212, 332,

377,423,455,631,722,725 Manley-Rowe power relations, 165 Masks, 373,405,416,418,431,455,458,

465,468,495,507 Matrix display, 806 Matrix geometries for transistors, 230 Matrix inversion, 617 Maxwellian distribution, 101 Mean free path, 119, 759, 791

Mean time before failure (MTBF), 554 Measurements, 961, 967, 970 Medium scale integration (MSI), 466, 469,

472,518,574,589,947 Memories, 132, 168, 279, 281, 366,419,

457-472,515-518,554-589,610, 637-641,683-689,702,812,813, 878,894,945,952,957,961,963, 967

Mercury battery, 532, 548 Mercury cadmium telluride, 810,812 Merged transistor logic, 476. See also I'L Mesa etching, 71, 195, 217,392 MESFETs. See Chapter 6 Mesh geometry transistor, 230 Metal, 757,946,950,964,968,969,972

-aluminum oxide-semiconductor (MAS), 457

-barrier-metal (MBM) tunneling, 182, 190, 192

contacts, 8,288,457,723. See also contacts and ohmic contacts

-ferroelectric-semiconductor transistor, 466

-GaAs,133 -grid, solar cell, 725 -InSb,133 -insulator point contact diodes, 191 -insulator-semiconductor structures

(MIS), 188,459,462,752,812, 954,964

-nitride structures, 456, 566 -oxide-metal tunnel diodes, 190 -oxide semiconductor, see MOS -oxide varistors, 942 -semiconductor barriers, 191,279,

342,748,752,809,810,887, 963. See also Chapter 2

-thermocouples, 933

Metal work functions, 98, 383,411,725 Metallization, 416, 476,592,594,605,637 Meter reader, 456 Mg (magnesium), 828, 829, 883 MgO,789 Mg-O complexes, 831 Microchannel plate, 810 Microcomputers, 570-589, 946, 957,

965,968,970 Microelectronics, 950, 953, 954, 960, 967 Microplasmas, 82, 84 Micropower circuits, 451,516,962

SUBJECT INDEX 989

Microprobe, 945 Microprocessors, 553, 568-589, 617,618,

945-947,952,953,957,960,961, 968,970,972,973

Microstrip, 136, 190,697 Microwaves, 2, 55, 82, 132-143, 163-193,

218-238,274-280,331-376,456, 465,507,541,542,586,643,644, 673,695-703,743,949,950,952-955,957,958,960,961,963,969, 972,973

Millimeter-wave, 188,546,695-703 Mini-MSINC computer program, 440, 442,

467 Miniaturization, 507,508,511 Minicomputer, 506, 572, 574,587-589,953 Minimum detectable signal (MDS), 141 Minority carrier, 4, 8, 17, 18, 33,53, 71,

80,114-119,131-135,151,189-194, 222,282,287,392,412,478,591, 632,722-729,749-752

Minority diffusion length, 716, 720, 732-739

Minority lifetime, 4, 11,33,44-53,64,79, 81,151,157,198,208,301,455-463,640,723,732,753,763,813, 821

Minority space charge, 222 Minority storage, 6,81,114,274,281,284 MIS (metal-insulator-semiconductor struc-

tures), 132, 189-192,460464, 638,640,723,728,747-752,835

Mixers, 133-148, 185-193,359-376,622, 909

Mn (manganese), 836 MnM structure, 658 MNMoOS structure, 587 MNOS (metal-nitride-oxide-silicon) .

structure, 457466,516,564,586, 622,639

Mnp+ structure, 658 Mo (molybdenum), 118,396,566 Mobile communications, 541 Mobility, 2, 3,4,71,115,131, 197,334,

386,387,434-441,455-465,594, 655,666,674,699,723,763,776, 802,894,914,933

Modulation, 73, 74, 121, 132-134, 141, 151,166,188,191,205,354,365, 374,375,441,546,643,701,794, 808,858,874

990 SUBJECT INDEX

Molecular beam epitaxy, 163, 275, 371, 883

Molecular crystals, 950 Moll's analysis, 246-250 Monte Carlo computer simulation, 343 MOS. See Chapters 7-9

adder, 434 analog to digital converter, 533,535,

588 AND-OR gate, 434 bipolar, 584 CALMOS program, 514 capacitance, 406, 411, 456-466,542,

628 channel mobility, 489 charge storage, 491, 588 circuit simulation, 441 complementary, see CMOS cost, 489 counter divider, 434 decoder, BCD to decimal, 434 device scaling, 504 dynamic RAMs, 568 electron beam memory, 456 encoder, analog to digital, 434 flip-flops, 434 gate protection, 464 hot electron injection gate, 589 IC crosspoint switch, 587 infrared sensing, 807,811 inverters, 489, 492 latch circuits, 434 low power, 456, 489 LED driver, 434 light sensor, 813 liquid crystal display driver, 434 logic, 434, 489, 491, 498. See also

logic LSI, 457,514-517,584. See also LSI memory, 475, 557, 566, 585, 589.

See also memories multipliers, 434 n channel. See NMOS NAND gate, 434 NOR gate, 434 p channel. See Chapter 7 packing density, 489. See also packing poly Si gates, 491 programmable memories, 434. See also

memories RAMs, 559, 589, 622, 634. See also

RAMs

read only memories. See ROMs reliability, 505 scaling, 504, 505 simulation, MSINC, 466 static shift resister, 434 strain sensor, 941 surface breakdown, 464 switches, 443,812 tetrodes, 458,463 threshold, 464 transistors, See Chapter 7 tunnel junction, 190 yield,489

MOSFETs, 332,346,373,514-517,540, 590,598,617,777,811,910,941, 945,948,950,953,966. See also Chapter 7

Mostek, poly-Si resistors, 559 Motorola, microprocessor MC6800, 570 Mott barrier, 105, 134, 191 Multi-collector transistor, 485 Multimeter, 531 Multi-emitter transistor, 279 Multiplexed signals, time, 527,529,546,

553,610,612,638,820,874 Multiplication, 189, 199,203,474,544,

583,585,617,755,758,806, 908,941,956

Multireflection, 810 MSI. See medium scale integration Mylar, 707

N (nitrogen), 829 Na+ ions, 203, 378, 409, 410,779 Na.KSb,781 NaYF4 YbEr, 836 NAND functions, 498, 688 Native oxide, GaAs, 416 Negative dielectric relaxation time, 678 Negative electron affinity, 779, 783-791,

806-812,947 Negative electron mobility, 676, 678, 699 Negative feedback. See feedback Negative resistance, 63, 64,82, 131,170,

322,456,644-651,663,668,670, 700,967

Nematic liquid crystals, 585 Neutrons, 371,935,951 Ni (nickel), 83, 103, 132, 135, 828 Ni-Cr, 238 Ni-GaAs, 103 Ni-Pt,135

Ni-5i,83 NMOS, 419, 422, 425, 443, 469, 489-491,

501,506,516,589 Noise, 119, 133-147, 187-191, 230, 274,

276,334, 348, 359, 366, 371-375, 440,443,448,462,465,527,542, 544,596,598,608~15,638,639, 666,672,673,697-703,756,757, 758,762,908,967,972

am, 672, 673, 697 audio frequency, 376 CCO, 610, 612 coherent, 133 equivalent power (NEP), 141 figure, 147, 334, 349, 355-373,670,

673 fm, 672, 673,700-702 GaAs MESFET, 348 generation-recombination, 448 immunity, 330,425,475,515,542 Johnson, 768 low frequency, 275,375,445-463,673 margin, 494 mean square transfer, 610 measurements, 640 mixer, 148 oscillator, 363 popcorn, 277 shot, 134 spectrum, 673 spikes, 494 telephone systems, 541 temperature, 170 thermally generator l/f, 449

Nominal detectable signal (NOS) in mixer, 141

NO, 872 NO"872 Nonaqueous electrolyte, 465 Nondestructive sensing, CCO, 598 Nonreflecting surface, 715,720 NOR function, 498, 501, 688 Normally-off logic, 692 NOT action, 686 npn transistors. See Chapter 4 Nuclear magnetic resonance, 952 Nuclear radiation, 941, 947, 951,967 Numeric display, 526,839 Nyquist sampling theorem, 613

o (oxygen), 828, 829, 885, 941 Oblique metallization, 418

O-Cs,783 Offset gate, 396

SUBJECT INDEX 991

Offset mask, CCO, 641 Offset voltage, 260,524 Ohmic contacts, 80, 85, 115, 118, 131,

135,144,173,283,303,332,670, 689,751,882. See also contacts

Operational amplifiers, 82, 372, 374,457, 460,516-530,533,535,541,544, 546,583-589,644,943,952,954, 962,963,965,967,968,970-973

Optical absorption, 770, 771, 783 Optical coupling, 312,546,692,839,

881 Optical data processing, 948 Optical detectors, 755, 960 Optical facets, 882 Optical fibers, 107, 865, 866, 873, 881,

885,888,949,954 Optical holography, 883 Optical imagers, 800, 807 Optical keyboard, 772 Optical lithography, 418, 514, 566 Optical properties, 805, 807, 810, 945,

946,955,964,968,973 Optical pumping, 863 Optical receiver, 756 Optical systems, 806,808,810,952,956,

963-965,968,972,973 Optical waveguides, 885 Optoelectronic devices, 754, 809, 866,

873,882,953,966 Organic semiconductors, 955, 965 OR function, 632, 685, 687 Orthochalcocite,740 Oscillations, 133, 137, 173, 179, 192, 230,

277,341,359,362,364,374, 375,547, 548, 644~51, 659, 660, 67~79, 695~99 .

Oscilloscopes, 44, 47, 574 Open-circuit voltage, solar cell, 705, 716,

723, 733, 740 Output impedance, 535, 541 Overlay transistor design, 233 Overshoot, 524 Oxide layers, 134,342,377,386,387,392,

406,410,416,418,435,456-460, 504,505, 513, 725,728, 948. See also SiO.

Oxide semiconductors, 929, 951, 959 Oxygen, 33,49,80, 132,280,410,459,

740

992 SUBJECT INDEX

P (phosphorus), 2, 50, 53, 57, 79-83, 96, 225,237,279,739,770,815,828

Packaging (packing density), 416, 473,495, 496,507,509,510,517,566, 569,592,610,622,623,634, 948,956,969,973

PAL system, TV, 610 Parallel connections, 56, 321, 324, 350,

422,571,628,630,632,687,691 Parametric amplifiers, 137, 159, 949 Parasitics, 124,139,145,151,192,263,

443,456,469,471,476,535,699, 798

Particle detectors, 943, 970 Passivation, GaAs, 464,833 Pb. _xCdxS, 872 Pb._xSnxSe,761,865,872 PbO,794 PbS,776,806,865,866 PbS. _xSex, 872 PbSe,865,866,873,935 PbxSn._xTe, 761, 769,813,865,866

870,872,884,888,889 PbTe,865,866 PdzSi, 131, 133, 135 Peak-to-valley ratio, tunnel diode, 171, 178 PELS, inverter, 493 PELT

inverter, 494 NAND gate, 498

Peristaltic charge-coupled device, 608 Phase-lock techniques, 953 Phase shift, 48,190,222,320,346,363,

521,644,646,653,703 keyed carrier modulation (PSK), 365,

373 Phased array, 193,279,676 Phonon,815 Phosphors, 816, 835, 968 Photo-capacitance, 883 Photocathodes, 755, 779,782-784,789,

794-812 Photosensor arrays, 637 Photosensors, 807, 813 Photothreshold, 130 Phototransistors, 199, 371, 748,772,

798,806-813,840 Photovoltaic devices, 79, 189, 704-758,

762,806,810,813,958,967 Photovoltaic thermal systems, 707 Physics books, 951, 955, 957-959, 962,

963,968,970,971

Picturephone, 806 Piezoelectricity, 193,610,941,959 Piezoresistance, 913, 916, 942, 943 p-i-n diodes, 28, 81, 150, 151, 157,158,

188-192,443,757,760,761,794, 809,956

Pinch-off, 313, 334, 340, 341, 343, 386, 466

P2 0,,416 Planar devices, 134, 188-195,207,215,

217,229,230,261,274-279,310, 327,346,373,376,416,465,508, 697-701,808

Plasma, 80, 292,313,594,660,663, 668,698,947,956,957,966

etching, 376 Plumbicon tube, 794, 808, 811, 812 pn junctions. See Chapter 1 pnm transistors, 478 pnpn structures. See Chapter 5 and thyris-

tors pnp transistors. See Chapter 4 Polaroid camera, SX 70, 552 Point array Si, 812 Point contacts, 143, 192, 757,812 Point defects. See defects Poisson distribution, 508, 756 Poisson ratio, 917 Poisson's equation, 6, 22, 381, 382, 648,

661,676 Photo-cell. See also photodiode and photo

voltaic devices, 550, 551 Photo-conductivity, 458, 550, 769, 771,

776,793,794,800-813,882,948, 956,961,963

Photo-current, 757,758,773,798,806, 810,811

Photo-Darlington transistor, 840 Photodetector, 448, 754-757, 767,769,

773,776,777,805,806,809-813, 941,948

Photodiodes, 32, 135, 136, 182,463,637, 748,755,757,760,763,773,783, 806-813

Photoelectric effects, 789, 790, 809,813, 945,957,960,962,967,973

Photoelectron spectroscopy, 946 Photoemission, 91, 135,448,783,787,

792,800,807,812,970 Photoexcited luminescence, 830 Photo-Hall measurements, 882 Photoionization, 448

Photolithography, 416, 471, 507, 557,769 Photomagneto diode, 82 Photometry, 552, 812 Photomultiplication, 132, 274, 787, 789 Photon absorption, 719, 729, 738, 755,

773,880 Photon energy of light, 2, 91, 719, 720,

733,755,787,812 Photon wavelength, 449 Photons, 754, 755, 767-772, 779, 782,

958 Photo-optical recording, 554 Photopolymers, 970 Photoreceptors, 800-802, 812 Photoresist, 195,859,951,960 Photosensitivity, 770, 793, 794, 806,

811,812 Polarization, 853, 854, 862 Pollution control, 553 Polycrystalline semiconductors, 729, 738,

747,793 Poly PL, 514 Poly-Si, 280,416,457,459,462,469,

476,517,559,566,592,620, 626,628,723

Population inversion, 843, 850 Position sensing, 941 Potentiometer, 909 Power added efficiency, 348 Power amplifiers, GaAs, 371 Power-band width product. See power-

frequency relationship Power capabilities, 227,299,301,650,

658,700,949,950,951,953, 956,957,961,964

Power class A, 346 Power Darlington circuits, 281 Power-delay product, 478, 487,504 Power density spectrum, 617 Power dissipation, 314,423,425,469,

475,496,509-511,568,619,620, 691,692

Power-frequency relationship, 69,227, 649,650,658,701

Power gain, 202, 348,669,670 Power-impedance product, 679 Power impedance-frequency limitations,

701 Power outputs, 275, 276, 350, 358, 359,

467,658,663 Powerrefiection,169 Power regulation, 318

SUBJECT INDEX 993

Power switching, 131, 152, 277 Power thyristors, 318, 320 Power towers, 705 Power-to-weight ratio, solar cells, 743 Power transformation ac/dc, 318 Power transistors, 276-281, 349, 371,458 Pressure, 919,922,943 Programmed shutter, 551 Programmable cathode-ray-tube controller,

571 Programmable keyboard/display inter

face, 571 Propagation delays, 366, 423, 425, 509,

663,678,683,695,690 Propagation mode, TEM, 658 Protons, 935 Pseudo-random access, CCD, 618 Pt (platinum), 52, 53,81,82,103,105,

134,327,507,723,933 Pt-GaAs, 134 Pt-GaP, 105 Pt-ZnS, 103 PtSi, 98, 118, 130-135, 163,761 Pulse inverter, 526 Pulse-position modulation, 878 Pulse regeneration, 371, 372, 527, 542,

683 Pulsed-amplitude-modulation (PAM), 365 Pulsed-code-modulation (PCM), 542, 585 Pulsed operation, 309, 365, 455, 627,

643,651,658-663,670,679,699-701,790,811,820,885,949

Punch-through, depletion, 205, 260, 387, 395,419,655,663

Q band, 697 factor, 651, 656, 673

Quadrature phasing, 638 Quadrupler, millimeter wave, 190 Quantum efficiency, 622, 627,755,762,

767,769,771,777,782-797,808, 830,881

Quantum chemistry, 961 Quantum-mechanical transmission, 114, 130 Quantum theory, 949, 956 Quarternary compound semiconductors,

785 Quartz crystal, 548 Quartz window, 566 Quasi-Fermi levels, 8,251,824 Quasi-neutrality, 21 Quasi-saturation region, transistor, 213, 279

994 SUBJECT INDEX

Quenched-domain mode, 679 Quenching, 49, 695 Quiescent power, 425, 496

Radar, 323,610,643,701 Radial cavity, 666, 668 Radiation effects, 33,44,192,455,456,

459,462,698,743,753,783,800, 815,941,949,951,958,960, 965,972,973

Radiation infrared, see infrared Radiation recombination, 192,723,821 Radio frequency heating, 410 Radiometry, 814 Radio receivers, 535 RAMS (random access memories), 373,

433,465,506,557,559,561, 566-571,583-589,641

Random logic, 419, 515 Random site image addressing, CCD, 631 Random walk, 4 Range, statistics, 954 Rays, gamma, 891 Reactance, 235,469,650,666 Read microwave avalanche diodes, 644-651,

697-703 Read-mostly memory, 564 Read-only memory. See ROMs Readout modes, CCD, 612, 631 Receivers, color television, 610 Recoil implantation, 748 Recombination

Auger, 83, 280 . centers, 12,49,52,287,723,821,

824, 826, 827 current, 79,116,136,199,207,208,

215-217,71~719,733,749, effects, 4,5,11,17,33,49,80,83,

105,106,292,295,313,722, 814,815,821,830

surface, 11, 17, 18, 116,414,722, 733,768

Rectification, 11, 17,20,29,55-60,81,82, 121-124,134,139,178,192,651, 963

Rectifiers, thyristor, 283-330 Red light, 815, 829 Reference voltage, 82, 550, 551,628 Reflection

acoustic, 553 amplification, 372

electrical, 233, 669, 783 optical, 714, 715, 732, 751, 783, 852,

857 Reflex klystrons, 643 Refractive index, 714, 816, 843, 848,

859,860 Refractory metal gate, 456 Refresh counter, 561 Regeneration, 307,317, 330,365,608,610 Register, 570 Relays, 542, 584 Reliability, 80, 275-278,457,468,475,

476,513-569,947,951,958 Resistance

channel, 334, 350 collector, 475 dc input, 379 ladder circuit, 527 negative, 461 parasitic, 699 pin diode, 158 shorted emitter in thyristor, 314 Si gate, 461 source-drain, 379 thin film, 810

Resistivity intrinsic, 2 stabilizing, 238 variable, 550

Resolution, 638, 794, 800 lithographic, 507

Resonant avalanche frequency, 647 Resonators, 356, 583,658,660,668,

670,696,890 Responsivity, optical, 768, 772-777 Retrograded doping profile, 163 Reverse attenuation, 683 Reverse conducting thyristor (RCT), 289 Reverse isolation, 354 Reverse leakage currents. See leakage

currents Reverse recovery time, 41,81,157,331.

See a Iso transients Reverse switching rectifier (RSR), 323 rf circuits, 137-143, 152-157,365,371,

376, 506, 655-676 Rheotaxy, 739 Richardson constant, 86, 102, 145 RIMPATTS, 650 Ring lasers, 863, 888 Rise time, switching, 278, 292, 317,331,365

ROMs (read only memories), 434, 465, 516, 564-572,577,584-589

S (sulfur) 2, 739, 770, 828, 829 S band, 643, 670, 699 Sah-Noyce-Shocldey theory (SNS), 11 Sapphire, 457,514,564. See also silicon

on sapphire Satellites, 541, 546,970 Saturated drift velocity, 2, 71, 225, 232-

343,379,509,644,649,660-668, 699,759

Saticon tube, 807 Sb (antimony), 2, 96, 770, 883 Sb,Ss' 793, 794,813 Scaling, transistor, 504, 507, 508, 658,701 Scanners, 274, 507,630,797,808 Scanning electron microscope, 48, 84, 131

797,798,882,954,972 Scanning projection printing, 507 Schmitt trigger, 894 Schottky barriers. 48, 82, 83, 141-150, 172-

179,187-193,309,310,330,342, 343,365-375,457,459,461,478, 514,515,573,658,666,670,682, 686-702,723-725,739,747-752, 754,760,761,786,807,812,941. See also Chapter 2

Schrodinger (wave) equation, 173 Scintillation, 790 SCR (silicon controlled resistors). See thy

ristors Se (selenium), 2, 96, 739, 740, 794, 800,

802,828,829,973 SECAM system, 610 Secondary electron effects, 787-789, 794,

797,807,811 Second breakdown, transistor collector

voltage, 204, 238, 268, 276, 280 Secure code generator, 506 Seebeck coefficient, 918 SEM, see scanning electron microscope Semiconductor-insulator-semiconductor

structures (SIS), 465, 752 Semiconductors, see specific topics Semimetals, 749, 948 Sensors, 506, 526, 553, 589, 594,637,

891,897,899,909,913,919,926, 928, 933, 941, 942, 943

Sheet resistivity, 312, 810 Shift register, 460,540,591,608,618,

SUBJECT INDEX 995

632-640, 763 Shock front, TRAPATI, 622, 660-666 Shockley channel model, 773 Shockley diode diffusion model, 8, 25, 267 Shockley-Read-Hall recombination, 11,

51,208,288 Shorted emitter, thyristor, 317,330 Shot-noise, 758. See also noise Shunt, 17,56, 142, 146, 151, 159,287-

289,298,317 Si (silicon)

amorphous, 729, 794 anisotropic etching, 457 Au doped, 78,115,133,331,449 avalanche in, 7, 758 bandgap, 2 Schottky barrier heights, 101

SiC (silicon carbide), 71, 80,189,835,953 Si

on carbon coated ceramics, 729 casting, 729 dielectric constants, 7, 387 dielectric relaxation time, 8 dendritic web, 752 deposited on graphite, 748 doping, 2,32, 127,448,449

in GaAs, 2 electron mobility, 2 energy states, 3 epitaxial, 83, 116, 123, 132, 196, 205 Fermi levels, 9 gates, 405, 425, 456, 564, 584, 588 heterojunction,269 IGFETs, see Chapter 7 In doped, 769, 811

SiH4 (silane), 411, 460,729 SiHC1s ,729 Si-metal interfacial states, 131, 134 Si-Mo,566 Si, N, + implanted, 810 Sis N4 , 277,407,410,463,466,476,

564,566,955,963 SiO,,31,32,80,133,195,205,374,378,

379,398,405-416,455-476,535, 464,566,599,623,687,797,800, 811,837,949

color table, 410 dielectric constant, 387 ion implantation, 458 masks, 458 on GaAs,414

996 SUBJECT INDEX

SiO. -Siinterface, 387,409-411,459,462 Si-P complex, 831 Si

poly crystalline, 82,412,457,458, 750 ribbon, 729, 747 S doped, 810 segregation coefficients, 2 solar grade, 729 thallium doped, 810 thin film, 810 vacancy, 49 web,729

Siemens, Avesta program, 516 Signal compression, 612 Signal regeneration, 608 Signal-to-noise ratio, 449, 542, 610-615,

622,756,759,762. See also noise Silane, 81, 729 Silkide~98, 118, 133,135 Silicon on sapphire, 81,419,431,458,

463,515,518,542,588,589, 634,663

Silver halide, 875 Silver oxide batteries, 548 Single-sideband (SSB) receiver, 148 SIPOS process, 278 Slew rate, 519-526, 584 Smith chart, 235, 376, 969 SMS transistor, 119 Sn (tin), 2, 878, 879 Snap action RF diodes, 53,157,166 SnO.,933,944,964 Snubber circuit, 323 Solar cells, 130, 136. See also Chapter 12

books,946,957,964,968,971,973 equivalent circuit, 716 space applications, 715

Solar concentrator systems, 728-737,744, 749

Solar energy costs, 728 Solar spectrum, 705, 733, 738, 743 Soldering, 945 Solubility, 79, 82, 83, 753, 770 SOS. See silicon on sapphire Space charge, 7, 17, 79, 103,222,254,

268,276,278,341,359,457, 646~58,678,679,699, 722

S parameters, 234, 235, 277,371,723,956 Spatial coherence, 888 Spectral response, 91,638,719,779,784,

787,794,797,806,814,815,828, 829,852,968

Spectroscopy, 882, 942, 946, 956 Speed-power relation, 475, 506 SPICE computer program, 254, 261, 401,

434-440,461 Spike,31,69,189,323,443,644 Spontaneous emission, 853 Spreading effects, 315, 317,330,398 Spread spectrum, 951 Sputter, 132 Square-law detectors, 143 Squaring operation, 617 Stability, 416, 494 Stacked gate FET, 396 Stagger tuning, 670 Static electrification, 958 Static induction transistor, 374 Statistics, 947 Step junction, 22, 28,43 Step recovery, 47,53,79-81 Stepped oxide, 592, 628, 633 Stepping motor, 548 Stimulated emission, 850, 888 Stoichiometry, 740 Stored charge, 45,116,119,132,281,

292,535,559,569,590,646,653 Strain, 416,449,457,472

gages, 913-918, 926, 940-951 Striations, 813 Stripe laser, 852, 857,883,887 Stripline, 148-151, 191, 371, 957 Storage tube, 794,800-813 Sulfurnitride polymer, 135 Superconductivity, 947, 953, 964 Super-injection, heterojunction, 845 Super-sceptre program, 317 Surface barrier diodes, 13 3 Surface breakdown, 278 Surface charge, 118, 216, 275, 381,416,

449,464,469 Surface electric field, 382 Surface recombination, 48,116,412,

723,737,768,769 Surface resistance, 17 Surface state effects, 135, 190, 387,405,

411-414,434,458,464,602,692, 725,807,944,952,953,960, 962,968

Surges, 299, 301, 317,553 Sweep-out action, 660, 663 Switching, 44, 49,55,73-84,114-119,150-

159, 176, 188-203, 227,238-254, 274-284,292,297,306-332,354,

365-375,443-467,475,510,530, 533,535,542,548,587,588,689, 808,953,960-963,965

Synchro, 899 Systems analysis, 950

T3L (transistor-transistor logic), 421, 443, 469,475,485,514-517,559,572, 588,620,627

T3L,469,475, 515 Targets, for image tubes, 794,797,800,

806-811 Te (tellurium), 2, 96, 828, 829,866,940 TED logic (transferred electron devices),

683-692 Telecommunications, 280, 541-546, 585-

588,951,953 Telemetering, 526 Television. See TV TEM mode, 854 TE mode, 853 Temperature effects, 136, 238, 292, 295,

359,440,458,459,471,472, 643,696,697,747,753,755,763

Temperature sensors, 943, 958, 967 Ternary semiconductor compounds, 96,

783,785,815,816 Terrestrial solar cells. See Chapter 12 Test instruments, 955 Thermal analysis, 2, 8, 80, 130, 191,276,

278,330,416,464,516,533, 541,640,650,658,695,696

Thermal conductivity, 71, 81, 510, 657, 850,951

Thermal conversion energy systems, 705 Thermal dissipation, see dissipation and

heat transfer Thermal feedback, 521 Thermal generation, 801 Thermal imaging, 812 Thermal impedance, 542, 657, 658,885 Thermal instability, 274, 280,460 Thermal lattice expansion, 270 Thermal noise, 169,464, 762, 769 Thermal oxidation, 80,416,457-462 Thermal resistance, 698, 700 Thermal runaway, 701 Thermal stability, 135, 142,535,541 Thermal voltage, 2, 216, 435 Thermionic conduction, 85 Thermionic emission, 85, 100, 105 Thermionic field emission, 110, 131, 134

SUBJECT INDEX 997

Thermistors, 900, 919, 929, 940, 943 Thermocouples, metal, 933 Thermoelectricity, 946, 947, 959, 970 Thermomagnetic, 971 Thermometry, 929, 933, 940, 942, 943, 946 Thevenin generator, 47 Thick-film technology, 276, 955, 956,963,

966 Thin films, 462-467,566,584,737-755,

783,808-813,884,945,952,956, 957,961,964,966,969,971,972

Thiourea, 740 Three-phase bridge, 299, 318, 320 Three-phase induction motor, 330 Threshold effects, 376-387,398-419,439-

466,491, 527,594, 639, 847,852, 857, 862,872, 882

Thyristor, 63, 302-305, 329, 330, 544, 933 See also Chapter 5

bi-directional, 304, 327 books, 946, 947,950,962-965 circuit model, 317, 331 commutator, 320 dI/dt rating, 329 field controlled, 329 gate circuits, 69 high power, 314, 317, 328, 330 high speed, 329 high voltage, 329 inverse gate, 307, 327 involute gate, 297 light activated, 331 magnetosensitive, 327 modeling, 331 paralleling, 321 power rating, 330 protection, 323 regenerative gate, 330 response time, 330 switch,289 three-phase bridge, 320 vertical-channel,331

Ti-Si, 131,136 Trace analysis, 948 Transconductance, 332, 336, 346, 379,

386,387,403-405,440 Transducers, 526, 891, 958, 964

angular, 940 capacitive, 941 Hall effect, 940, 942 pressure, 922 strain, 926, 941, 944

998 SUBJECT INDEX

Transfer inefficiency, CCD, 599, 600, 610, 641

Transferred electron devices, 786, 787, 807, 948. See also Chapter 11, Gunn, TEDs

Transformers, 532, 840, 894, 903 Transient behavior,i43, 81, 275-279, 330,

434-443,456-467,496,553,695, 699,755,757,769,806,808,824, 827,971

Transistors. See Chapters 4 and 6-8, IGFETs, JFETs, MOSFETs

books, 947, 951,952 ion-sensitive, 935, 940 lateral, 261 metal based, 135 modeling, 275, 331 oscillators, 643 Schottky barrier collector, 13 3 temperature sensor, 928 thin film, 808

Transit time, 230, 255-260, 339-343, 404, 405,478,644-659,672-679,696-699,769,951

Transmission, 234, 358, 526, 542, 546, 700

probability, 173 Transport, 4,133,197,208,287,457,

460,701 Transverse current flow, 288,309,689,

699,702 TRAPATTS, 644-670, 695-703 Traps, 11,50,51,80-83,132,217,287,

366,398,407,443,448,455-466, 599-602,666,748,754,769,777, 801,811,812,824,826

Traveling wave, 233, 372,641,690,696 Triacs, 302-305, 329,330 Trichloroethylene, 457 Triggering, 282-313, 321-327, 608,660,

666,670,682-687,810,894 Trimethylaluminum,737 Trimethylgallium,737 Tripier circuit, 166 Tritium counting, 790 TSS (tangential signal sensitivity), 141-143,

179 Tuning, 462, 537, 547,643,658,666 Tunneling, 9,64,80,83,98,110,118,

131-143, 170-193, 217,365,443, 448,738,749,949,951,967

Turbine generator, 707

Turn-off, thyristor, 289-331,689 Turn-on, FETs, 378, 443, 465,467,508,

564

TV thyristor, 284-331

CCD,610 line scan, 622 low light, 813 players, 878 receiver, 535, 586, 641, 797,805,

806,808 1WTs (traveling wave tubes), 695,701

Ultra high frequency, 135,355,538 Ultra violet, 566, 705 Uniform doping, 202, 260, 285, 288,402,

700,922,923,605,663,736 Unijunction transistor, 64, 79, 82, 275,

280,322,371,372 Unity gain, 494, 520, 524 Up-converter, 190,816 UV radiation, 507

Vacancy, 172 Vacuum tube devices, 69, 74, 963 Valence band, 9, 93,448,466, 783,786,

843 Valley transfer, 674 Vanadium, 133 Van de Graaff generator, 49 Vapor-phase-epitaxy, 737, 785, 827, 829,

831,890,950,966 Varactor diodes, 137, 159, 165-169,188-

193,681,695-69~963,965 Varistor, 323, 941, 942 Velocity-field characteristics, 336, 343,

697,701 Vertical injection logic, 518 Vertical junction solar cell, 731 VHF spectrum, 356 Vibration-rotation resonance, 872 Video communications, 524 Video detectors, 189 Video impedance, 179 Video integrators, 610 Video processing, 641 Video tape recorder-player, 538 Vidicon tubes, 31,631, 755, 791-800,

806-813 Violet responsive solar cell, 720 VLSI (very large scale integration), 518.

See also LSI

book, 962 VMOS (vertical MOS devices), 419-422,

443,457,467-469,475,507,516, 559,583-587

Voice encoder, 588 Voltage, see specific topics

breakdown, 78 controlled oscillators, 695 controlled resistors, 332, 350 frequency converter, 511, 585 logic levels, 469 multiplication, 59 offset, 527 pinch off, 336 regulators, 526, 540 sawtooth, 530 semiconductor surface, 382 spikes, 323, 494 transients, 79, 323,478,496

Volume control, 537

W (tungsten), 133, 135, 782 Wafers, 416, 613 Watches, electronic, 547,548,584-589,839 Water, absorption of solar energy, 748 Wattmeter, 903 Waveforms, 47,652-663,679 Waveguides, 166, 191,192,650,658,

666,672,681,699,812,847, 888,903,949

Wavelengths, 2, 193, 507,622,643,715, 754, 755, 760, 762, 763, 770, 779, 782,785,805,806,812,814

Wavemechanics, 969

SUBJECT INDEX 999

Wheatstone bridge, 908, 918 White light, 794 Wideband amplifiers, 276, 701 Windows, solar cell, 557 Work function, 98,383, 387,411,725,

755,779,782,783 WSi., 98

X band, 346, 375, 643, 658, 672, 697-703 X ray, 560, 806, 885, 889, 946, 959 X ray lithography, 518 Xe tube discharge, 551 Xerography, 800 XY access, 557

Yields, 513, 516,789 Y AG laser, 806 YIG sphere for tuning, 701 Young's modulus, 915, 917

Zener diodes, 61, 62,78-84,323, 379, 532

Zerbst plot, 414 Zn (zinc), 2, 192, 770,771,828,829 ZnGeAs. , 743 ZnO,802, 807,866, 926, 940, 941, 944 Zn-O pairs, 828,829,831 ZnS,93,812,813,835,836,866,889 ZnSe, 133,136,835,866,882 ZnSeTe,835 ZnTe,825,866 ZnTe/CdS, 887 ZnTe/CdTe,742 Zoom, 797

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References - Springer978-94-011-7021-5/1.pdfReferences Abeles, F. (Ed.), Optical Properties of...

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