RF Devices for LNB(GET-SB-1823)2009 10 · 2019-03-18 · 1 Microwave Device Sales Engineering Group...

1

Microwave Device Sales Engineering GroupCompound Semiconductor Devices Division

Discrete and IC Operations Unit

NEC Electronics Corporation

RF devices for DBS LNBRF devices for DBS LNB

October, 2009

Oct. 01. 2009

GET-SB-1823

2

DirecTVEchostarASTRABSCS

X-Ku bandf= 12GHz

0.30.35

0.350.5

0.450.45

0.3

13.513.5

13.513

12.012.5

12.5

NE3511S02NE3512S02

NE3210S01NE4210S01

NE3503M04NE3513M04 *1

NE3515S02

HJ-FET for LNA

NF typ. Ga typ. Part Number

HJ-FET

MIX., Buffer Local OSC.

NE4210S01

NE3503M04

NE3515S02

Si BJT2SC5508

NESG2031M05(High Posc)

2SC5606(fosc>13GHz)

unit dB dB

Si MMIC

IF Amp.<High Gain>μPC3236TKμPC3232TBμPC3225TB<Low Current>μPC3226TBμPC3227TB<Standard>μPC3223TBμPC3224TB<3.3V>μPC3239TBμPC3240TBμPC3241TBμPC3242TB *1

μPC3215TBμPC2712TBμPC2711TBμPC2709TB

*1 : Under Development, (Target Performance)

Devices for DBS LNBDevices for DBS LNB

GaAs/Si MMIC

IF SW Matrix

4 x 2 SW

(GaAs 5V)μPG2054KμPG2053K

(CMOS 5V)μPD5716GRμPD5720K

(CMOS 3.3V)μPD5715GR

K bandf= 20GHz

0.7

0.7

0.75

13.5

13.5

10

NE350184C

NE3517S03

NE3514S02

Si-BJT/GaAs HBT

We provide Total LNB RF Solutions with our GaAs and Si technology.

New Device,Recommended Device,

<MIX.>

<Lo. Buffer>

NE3515S02

*2 : Under Planning, (Target Performance)

μPD5739T7A *1

(4x2SW +Control+IFA)

3

4

CY2007 CY2008 CY2009

Low Noise FET

IF-Amp

SW Matrix (4x2)

X-Ku band(@12GHz)& C band

K band(@20GHz)

High Performance

High Performance

Low Cost

★

★

●High Gain

●Low VoltageHigher Gain

μPD5716GR(ISL=30dB)

μPD5720K(High ISL)(ISL=34dB)

Integration ★

= Provide Total RF Solution for LNB =

High PerformanceNExxxx *2

( NF=0.3dB, Ga=14.5dB )

★

RF Devices Roadmap for LNBRF Devices Roadmap for LNB*1 :Under Development*2 :Under Planning

NE350184C(NF=0.7dB, Ga=13.5dB)

NE3512S02(NF=0.35dB, Ga=13.5dB)

NE3511S02(NF=0.3dB, Ga=13.5dB)

NE3503M04(NF=0.55dB, Ga=11.5dB)

NE3514S02(NF=0.75dB, Ga=10dB)

NE3503M04( New Spec. )( NF=0.45dB, Ga=12dB )

NExxxxx *2

( NF=0.65dB, Ga=13.5dB )

NE3517S03( NF=0.7dB, Ga=13.5dB )

μPC3236TK(Gp=38dB @+5V)

μPC3239TB(Gp=25dB/29mA @+3.3V)

μPC3240TB(Gp=25dB/13mA @+3.3V) μPD57xx *2

(4x2SW +Tone/Voltage decoder)

μPD5739T7A *1

(4x2SW +IFA +Tone/Voltage decoder)

★

★

★

4x2SW

Cont. cir.4x2SW

Cont. cir.

μPC3241TB(Gp=24dB/19.8mA @+3.3V)

μPC3242TB *1

(Gp=22dB/4.2mA @+3.3V)★

New PKG

New device design optimization

NE3513M04 *1

( NF=0.45dB, Ga=12.5dB )

★High PerformanceRefined PKG

New device design optimization

●

●

●

5

LN HJ-FETfor RF LNA, Mixer

to In Door Unit

4 x

2 S

W M

atrix

4 x

2 S

W M

atrix

IF AmpIF Amp

Mixer

DRO

LNA LNAMatrix SW

DRO

6

2002 2003 2004 2005 2006 2007 2008 2009 2010 CY

0.8

1.0

0.6

0.4

0.2

NF (dB)

Suitable for high performance system!

NE3210S01NF=0.35dBGa=13.5dB



*1 : Under Development

NE350184CNF=0.7dBGa=13.5dB@f=20GHz

HJ-FET Devices Roadmap

VALUE SHOWS TYPICAL.@f=12GHz,VDS=2V,ID=10mA

NE3503M04NF=0.55dBGa=11.5dB

Keeping highest Performance for your Systems !

X to Ku-bandNE3514S02

NF=0.75dBGa=10dB @f=20GHz


NE3513M04 *1NF=0.45dB Ga=12.5dB

*2 : Under Planning

NExxxxx *2NF=0.65dBGa=13.5dB@f=20GHz

NE3515S02NF=0.3dBGa=12.5dB(P1dB=+14dBm)

NE3517S03NF=0.7dB,Ga=13.5dB@f=20GHz

NExxxx *2

NF=0.3dBGa=14.5dB

NE3503M04(New Spec.)NF=0.45dB Ga=12dB

7

Benchmarking of NF, Gain performance at LN GaAsFETsPart Number

NE3210S01

NE4210S01

MGF4953A

MGF4934CM

NF (dB) Ga (dB) RemarksMIN. TYP. MAX. MIN. TYP. MAX.

0.35 0.45 13.5120.5 0.7 1311

NE350184C 0.7 1.0 13.511

0.4 0.5 13.512

0.50(0.53) 0.75 13.0

(12.8)11.5

---

---

---

---

---

---

---

---

---

---

---

NE3511S02

NE3512S02

0.3 0.45 13.512.5

0.35 0.5 13.512.5

---

---

---

2V/10mANE3514S02 0.75

(0.75) 1.0 10(11)8--- ---

( Actual Measured Results @Sample )MGF4953B 0.55(0.75)

10.5(10)--- 0.80 9.0 ---

New Device, Recommended Device,

MGF4961B 0.7 0.95 --- 13.511.5 ---

( Actual Measured Results @Sample )

FHX77Z1B 0.55(0.65) 0.75 13

(13)11.5--- ---

---NE3515S02 0.3 0.5 12.511---for Local Buffer, PA Driver, LNA(P1dB = +14dBm TYP. @3V,25mA)

NE3503M04 0.45 0.65 12.011.0--- ---


MGF4941AL 0.35 0.5 13.512--- ---

@freq.VDS/ ID

20GHz

20GHz

12GHz

12GHz

12GHz

MGF4935AM 0.45(0.50) 0.65 12.0

(12.3)11.0--- --- ( Actual Measured Results @Sample )


2V/10mA

2V/10mA

2V/10mA

2V/10mA

Flagship Device on LN HJ-FET

New Specification Update

MGF4963BL 0.7 --- 13.5 ------ ---

NE3517S03 0.7 1.0 13.511--- ---

*1 : Under Development (Target Performance),

---NE3513M04 *1 0.45 0.65 12.511.5---

*2 : Under Planning (Target Performance),

@6mA@10mA

------ 0.45 12------

8

Lowest Noise Figure Performance in the World

Pin Connection

Performance (specification)

1: Source 2: Drain3: Source 4: Gate

PKG

NF = 0.3dB TYP./ 0.45 MAX. Ga = 13.5dB TYP./ 12.5dB MIN.

@VDS=2V, ID=10mAf=12GHz

NE3511S02ULTRA LOW NOISE HJ-FET

Pb Free Products

Concept- Higher performance, - Lower cost than S01 PKG - Pb(Lead)-Free Products

(Unit:mm)

4

1.5

MA

X.

3.2

2.2

3.2

0.65 2.6

0.5

2.6

1

2

3

In Mass Production

B

Bottom View

9


(Unit:mm)


New Plastic Hollow Package

Pb Free Products

NF = 0.35dB TYP./ 0.5 MAX. Ga = 13.5dB TYP./ 12.5dB MIN.

@VDS=2V, ID=10mAf=12GHz

- Higher performance, - Lower cost than S01 PKG - Pb (Lead)-Free Products

Pin Connection


PKGConcept In Mass Production

4

1.5

MA

X.

3.2

2.2

3.2

0.65 2.6

0.5

2.6

1

2

3

C- NE3210/4210S01 replaced NE3512S02

Bottom View

10

Low Noise HJ-FET

321 4

0.40

1.252.05

0.30

0.59

2.0 1.30

1.25

0.65

0.65

0.11


- Gain and Mix. stage for Ku-band LNB- For Low power consumption LNA sets- Other Ku-band LNA- Pb (Lead)-Free Products

Concept PKG

Pin Connection

NE3513M04

NF = 0.45dB TYP./ 0.65dB MAX.Ga = 12.5dB TYP./ 11.5dB MIN.

@VDS=2V, ID=10mA, f=12GHz (Reference Value)NF = 0.45dB TYP. Ga = 12dB TYP.

@VDS=2V, ID=6mA, f=12GHz

4pTSMM Package

Pb Free Products

Performance (Target specification)

DS : Nov., ‘09MP : Feb., ‘10

Under Development

Refined PKG& New FET chip

High Gain Version of full-molding PKG

11

Low Noise HJ-FET

321 4

0.40

1.252.05

0.30

0.59

2.0 1.30

1.25

0.65

0.65

0.11


- Gain and Mix. stage for Ku-band LNB- Other Ku-band LNA- Pb (Lead)-Free Products

Concept PKG

Pin Connection

NE3503M04

NF = 0.45dB TYP./ 0.65dB MAX.Ga = 12.0dB TYP./ 11.0dB MIN.


(Reference data)NF = 0.35dB TYP. Ga = 17dB TYP.


In Mass Production

4pTSMM Package

Pb Free Products

V75Performance (specification)

Specification UpdateTopics!

12

NF, Ga Distribution Data of NE3503M04

0 200 400 600 800 1000

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

NF (dB)

0 500 1000 1500

11.00

11.25

11.50

11.75

12.00

12.25

12.50

12.75

13.00

13.25

13.50

Ga (dB)

n : 1716pcs (39lots)Ave. : 0.44Max. : 0.53Min. : 0.36σ : 0.030

Previous Spec.: 0.75dB MAX.

Previous Spec.: 10.5dB MIN.

n : 1716pcs (39lots)Ave. : 11.91Max. : 12.31Min. : 11.62σ : 0.123

@Test Cond.: f=12GHz, VDS=2V,ID=10mA

Dec.10, 2008

New Spec.: 0.65dB MAX.

New Spec. 11.0dB MIN.

Previous Spec.: 0.55dB typ.

New Spec.: 0.45dB typ.

Previous Spec.: 11.5dB typ.

New Spec. 12.0dB typ.

Note: NF,Ga specifications was reviewed by the ability value of the product. There is no change of the product design.

13


(Unit:mm)


New Plastic Hollow Package

Pb Free Products

NF = 0.3dB TYP./0.5 MAX. Ga = 12.5dB TYP./11dB MIN.

- X-Ku band Local Buffer Amp, Driver Amp- Lower cost than S01 PKG - Pb (Lead)-Free Products

Pin Connection


PKGConcept

4

3

1.5

MA

X.

3.2

2.2

3.2

0.65 2.6

0.5

2.6

1

2

Po(1dB) = +14dBm TYP.

- NE325/425S01 replaced NE3515S02

@ VDS=3V, ID=25mA set, f=12GHz

@VDS=2V, ID=10mA,f=12GHz

G

In Mass Production

Bottom View

14

0

2

4

6

8

10

12

14

16

18

20

-15 -10 -5 0 5 10

Input Power Pin(1tone) (dBm)

Out

put P

ower

Pou

t (dB

m),

Line

r Gai

n

GL

(dB)

0

10

20

30

40

50

60

70

80

90

100

Dra

in C

urre

nt I

d (m

A),

Gat

e Cu

rren

t Ig

(mA

)

Pout

GL

Id

Ig

f = 12 GHz VDS = 3 V ID = 25 mA set (Non-RF)

Note: PO(1dB) optmized

NE3515S02OUTPUT POWER, Gain, Id, Ig vs. INPUT POWER

(Reference Only)

15

NE3515S02(Reference Only)

0

5

10

15

20

25

1 10 100

frequency f (GHz)

|S21

|2 , M

AG, M

SG

(d

B)

VDS = 3V, ID = 25mA

|S21|2

MSG, MAG

0.0

0.5

1.0

1.5

2.0

2.5

1 10 100frequency (GHz)

Min

imum

Noi

se F

igur

e N

Fmin

(dB

)

0

5

10

15

20

25

Asso

ciat

ed G

ain

Ga

(dB)

Ga

NFmin

VDS=2V, ID=10mA

|S21|2, MAG, MSG vs. FREQUENCYMINIMUM NOISE FIRURE, ASSOCIATED Gainvs. FREQUENCY

16


(Unit:mm)

NF = 0.7dB TYP./ 1.0 MAX. Ga = 13.5dB TYP./ 11dB MIN.



Pb Free ProductsLow Cost & High Performance for K-band

Pin Connection

PKGConcept

4

1.5

MA

X.

3.2

2.2

3.2

0.65 2.6

0.5

2.6

1

2

3

E

Performance

- Keep the Superior Device Performance- Pb(Lead) Free Product- Newly designed μ-X Hollow Plastic PKGsame as conventional Plastic PKG (S02) in appearance

K-band New Plastic Hollow Package

Bottom View

New ProductNew ProductNew Product

In Mass Production

17

2.2m

m*

Reference plane( Edge of Package )

DrainGate

1.7mm 2.6mm

K-band New GaAsHJ-FET(K-band New Plastic Package)

RF Measuring Layout PatternNE3517S03

Package foot pattern and RF Measuring Layout Pattern

(REFERENCE ONLY)

(UNIT: mm)

E

Dis

tanc

e of

thro

ugh

hole

s of

gr

ound

ing

Sour

ce p

ins

Source

Source

Reference Plane(Calibration point)

13.0

6.0

0.54

0.74

0.64

φ 0.3 T.H.

RT5880 /ROGERS t=0.254 mmεr=2.20Tan delta = 0.0009 @10GHzAu-flash plate

1.7 1.7

GND

Bottom View

* : Revised from 1.6mm to 2.2mm

Reference Plane(Calibration point)

1.6

2.062.6

18

1:Source 2: Drain3: Source 4: Gate

1.78±0.2

(Unit:mm)

1

1.78 ± 0.2

0.5TYP.

2

3

4

1.7MAX

0.1

1.0±0.2

NF = 0.7dB TYP./ 1.0dB MAX. Ga = 13.5dB TYP./ 11dB MIN.


NE350184Cμ-X Ceramic Package

ULTRA Low Noise HJ-FETfor K Bandfor K Band

High gain Performance @20GHz

- 1st stage for Ka-band LNB- Other K-band LNA

Pin Connection

PKGConcept

In Mass Production

Pb Free Products

A


19

Ga

(dB

)

NE350184C (Reference Only)

20


(Unit:mm)

NF = 0.75dB TYP./ 1.0 MAX. Ga = 10dB TYP./ 8dB MIN.



Pb Free Products

- Gain and Mix. stage for Ka-band LNB- Other K-band LNA- Pb (Lead)-Free Products

Suitable for Gain stage and Mixer stage for K-band

Pin Connection

PKGConcept In Mass Production

4

1.5

MA

X.

3.2

2.2

3.2

0.65 2.6

0.5

2.6

1

2

3

D

Performance (specification) Bottom View

21

NE3514S02Minimum Noise Figure, Associated Gain

vs. Frequency

(Reference Only)N

Fmin

(dB

)

Ga

(dB

)

22

Low Noise GaAs HJ-FET Series Line-up

6**21212**0.45**160---

1021212.50.45NE3513M04 *1

16015320+12 **1022013.50.7NE3517S03

NE3510M14*1

NE3510M04

NE3509M14

NE3509M04

NE3508M14

NE3508M04

NE3514S02

NE350184C

NE3503M04NE3515S02NE3512S02NE3511S01NE4210S01NE3210S01

Part No.

1022 **20 **0.35 **---

152416.50.40

---1022150.45

102

ID set(mA)

VDS(V)

freq.(GHz)

15

103010

3010

2510

25

15

15

2

232

32

32

3

2

2

2+16 **

2 +18 **

24+12 **

2+11 ** 102218.50.4152

2 **19 **0.35 **

ID(mA)

VDS(V)

freq.(GHz)

280

400

800

160

160

160200160160160160

Wg(μm)

---10212120.45

4+11 **4160.45

2+11 **102217.50.4

10

10

10

1010101010

2

2

2

22222

2 +14 ** 2140.45

L-S band

12+10 **1213.50.35

X-KuBand

---20100.75

24+10 **2013.50.7

K-band

12+14 **1212.50.3---1213.50.35

12

Test Condition

---

+10 **

PO(1dB) **(dBm)

1212

Test Condition

0.30.5

NF(dB)

13.513

Ga(dB)

Wg: Gate Width ** : Reference ValueNew Device,

Note)

Note) Development was frozen, *1 : Under Development (Target Performance), *2 : Under Planning (Target Performance),

23

Si MMIC for IF-AMP

to In Door Unit

4 x

2 S

W M

atrix

4 x

2 S

W M

atrix

IF AmpIF Amp

Mixer

DRO

LNA LNAMatrix SW

DRO

24

CrossCross--reference for IFreference for IF--Amplifier MMICAmplifier MMICVcc Icc Gp NF Psat P-1dB Gp NF Psat P-1dB(V) (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dBm) (dBm)

NEC μ PC3236TK 5 24 38 2.6 15.5 11 38 2.6 10.5 7.5NEC μ PC3232TB 5 26 32.8 4.0 15.5 11 33.8 4.1 12 8.5NXP BGM1014 5 21 32.3 4.2 12.9 11.2 34.1 4.1 9.3 5.7NXP BGM1013 5 27.5 35.5 4.6 14 13 31.8 4.9 10.2 8.1NXP BGM1011 5 25.5 30 4.7 13.8 12.2 37 4.6 10.8 7.7Ubec UA2707 5 25 33 2.5 13.0 9.5 33.5 3.0 13 9Ubec UA2711 5 17.5 32 2.1 5 4 31.5 2.3 5.0 2NEC μ PC3226TB 5 15.5 25 5.3 13 7.5 26 4.9 9 5.7NEC μ PC3223TB 5 19 23 4.5 12 6.5 23 4.0 9 5NEC μ PC3215TB 5 14 (20) (2.1) (3.5) (0.5) (21) (2.7) (3) (0)NEC μ PC2709TB 5 25 23 5.0 11.5 (7) (21) (5.1) (9) (5)NXP BGA2716 5 15.9 22.9 5.3 11.6 8.9 22.8 5.5 7.5 6.1NXP BGA2709 5 23.5 22.7 4.0 12.5 8.3 23 4.4 7.5 5.4Ubec UA2716 5 17 23 3.8 11.5 7.5 24.5 4.3 10.5 5.5Ubec UA2709 5 22.5 23 3.5 13.0 9.0 25 3.8 13.0 8.5NEC μ PC3227TB 5 4.8 22 4.7 -1.0 -6.5 22 4.6 -3.6 -8NEC μ PC3224TB 5 9 21.5 4.3 4 -3.5 21.5 4.3 1.5 -5.5NEC μ PC2712TB 5 12 20 4.5 3 (0) (20) (5) (2) (-3)NXP BGA2715 5 4.3 21.7 2.6 -4 -8.0 23.3 3.1 -5.0 -8.5NXP BGA2712 5 12.3 21.3 3.9 4.8 0.2 22 4.3 1.3 -2Ubec UA2712 5 12.3 21.3 3.9 4.8 0.2 22 4.3 1.3 -2Ubec UA2711 5 12.6 13.1 4.8 2.8 -0.7 13.9 4.8 0.6 -1.8Ubec UA2715 5 4.3 21.7 2.6 -4 -8.0 23.3 3.1 -5.0 -8.5NEC μ PC3241TB 3.3 19.8 23.5 4.0 --- 7.5 24 4.3 --- 6NEC μ PC3239TB 3.3 29 25 4.0 12.5 10 25.5 4.3 10 8NXP BGM1012 3.0 14.6 20.1 4.8 9.7 6 20.4 4.9 5.6 3.4NXP BGM2771 3.0 33.3 21.4 4.5 13.2 12.1 20.8 4.7 10.5 8.4Ubec UA2732 3.3 17 22 3.2 9 5 22.5 3.3 8.5 4.5NEC μ PC3242TB *1 3.3 4.35 22 3.9 --- -7.1 22 3.9 --- -8.9NEC μ PC3240TB 3.3 13 25 4.3 --- 1 24.5 4.5 --- -4NXP BGA2748 3.0 5.7 21.8 1.9 -2.3 -9.2 18.5 2.4 -3.3 -10.9NXP BGA2714 3.0 4.58 20.4 2.2 -3.4 -8 20.8 3 -4.7 -9Ubec UA2731 3.3 6 22 3.1 -5Ubec UA2725 3.3 12 20 1.6 5 -1 20 1.9 4 -1.5

Part Name

1.0GHz 2.2GHz

*1 : Under Development (Target Performance), New Device, *2 : Under Planning (Target Performance),

25

Po(sat) Po(1dB) Gp NF Po(sat) Po(1dB) Gp NFGHz V mA dBm dBm dB dB dBm dBm dB dB

µPC3236TK (UHS4,SiGe:C) 24 16 11 38 2.6 11 8 38 2.6 in MPµPC3232TB 50(UHS2,SiGe) 26 15.5 11.0 32.8 4.0 12 8.5 33.8 4.1 in MPµPC3225TB 50(UHS2,SiGe) 24.5 15.5 9.0 32.5 3.7 12.5 7.0 33.5 3.7 in MP

µPC3242TB *1 50(UHS2,SiGe) 4.35 --- -7.1 22 3.9 --- -8.9 22 3.9 U.D.µPC3240TB 30(UHS0,Si) 13 --- 1 25 4.3 --- -4.0 24.5 4.5 in MPµPC3227TB 50(UHS2,SiGe) 4.8 -1.0 -6.5 22.0 4.7 -3.5 -8.0 22.0 4.6 in MPµPC3224TB 30(UHS0,Si) 9.0 4.0 -3.5 21.5 4.3 1.5 -5.5 21.5 4.3 in MPµPC3215TB 30(UHS0,Si) 14.0 3.5 -1.5 20.0 2.1 3.5 -1.0 20.0 2.8 in MPµPC2712TB 20(SAT3,Si) 12.0 3.0 -2.0 20.0 4.5 1.5 -3.5 17.0 4.3 in MPµPC3241TB 30(UHS0,Si) 19.8 --- 7.5 23.5 4.0 --- 6 24 4.3 in MPµPC3239TB 30(UHS0,Si) 29 12.5 10 25.0 4.0 10 8 25.5 4.3 in MPµPC3226TB 50(UHS2,SiGe) 15.5 13.0 7.5 25.0 5.3 9.0 5.7 26.0 4.9 in MPµPC3223TB 30(UHS0,Si) 19.0 12.0 6.5 23.0 4.5 9.0 5.0 23.0 4.0 in MPµPC2776TB 20(SAT3,Si) 25.0 6.5 6.5 23.0 6.0 6.0 3.0 22.0 6.8 in MPµPC2709TB 20(SAT3,Si) 25.0 11.5 8.5 23.0 5.0 9.0 6.0 20.0 5.0 in MP

StatusPartNumberFeature

1GHz 2.2GHzfmax IccVcc

HighGain

Wideband

MediumPower

5.0

5.0

5.0

3.3

3.3

Main characteristics of IFMain characteristics of IF--Amplifier LineAmplifier Line--upupLower Current & Wider Bandwidth

μμPC3223TB, PC3223TB, μμPC3224TB, PC3224TB, μμPC3232TB are our standard IFPC3232TB are our standard IF--Amplifiers for LNB. Amplifiers for LNB.

*1 : Under Development (Target Performance), New Device,*2 : Under Planning (Target Performance),

26

FY ’06 ‘07 ‘08

IF-Amp

High Performance

Small Size PKG

μPC3232TB (33dB) Mid. Po.1G-2.2GHz @5VHigh GainLower Harmonics

μPC3223TB (23dB) Mid. Po.μPC3224TB (21.5dB) W.B.A.0.25G-2.2GHz@5VStandard

μPC3236TK Mid. Po.

38dB Gain1G-2.2GHz @5VHigher Gain

Roadmap of IFRoadmap of IF--Amplifier Amplifier High Gain, Gain flatness, Wide band, Lower supply current

μPC3239TBMid. Po. 25dB Gain0.25G-2.2GHz @3.3VLow Supply Voltage

μPC3226TB (25dB) Mid. Po.μPC3227TB (22dB) W.B.A.0.25G-2.2GHz @5VLower Supply Current

‘09

μPC3240TBW.B.A.

25dB Gain0.25G-2.2GHz @3.3VLow Supply Voltage

μPC3241TBMid. Po. Low Current Version

0.25G-2.2GHz @3.3VLow Supply Voltage

μPC32xx *2

Mid. Po. High Gain Version


μPC3242TB *1

W.B.A. Low Current Version


New Device, *1 : Under Development (Target Performance)*2 : Under Planning (Target Performance)

Target ScheduleDS: DS: Oct.Oct.’’0909MP: MP: Jan. Jan. ‘‘1010

MP startMP start

27

3.3V3.3V--Bias, Wide Band IFBias, Wide Band IF--Amplifier Amplifier

Concept- 3.3V DC-bias, Wide Band IF-Amplifier - Good flatness and Better Return LossApplication- IF Amplifier for LNB etc.Performance (Target Performance)ICC = 4.35mA TYP. (@Vcc = +3.3V)- GP = 22dB TYP. (@1GHz), 22dB TYP. (@2.2GHz)- Po(1dB) = -7.1dBm TYP. (@1GHz),

-8.9dBm TYP. (@2.2GHz)- NF = 3.9dB/ 3.9dB TYP. (@1GHz/ 2.2GHz) - Return Loss : In:10dB TYP. Out: 10dB TYP.- 6pin Super Mini mold Package

(2.0 x 1.25 x 0.9t mm)

6pin super MM( 2.0 x 1.25 x 0.9t mm )

2.0

mm

OUT

IN3

GNDGND

VCC

1

4

52

6 NC *

0.9

mm

Pb Free Products

1.25 mm

DS : Oct.,‘09MP : Jan., ‘10

μPC3242TB

* : NC: Non-Connection

3.3V DC-bias /Lower IccWide Band IF-Amp.

NoteA NC pin is Non-connection in the mold package (When NC-pin is open state, It will get an influences of floating capacitance. Therefore, we recommend connect to NC pin and GND pin).

(Connected with Pin 5)

Under Development

28

3.3V3.3V--Bias, Medium Output Power IFBias, Medium Output Power IF--Amp. Amp.

Concept- 3.3V DC-bias, Wide Band/ Med. Power IF-Amp. - Good flatness and Better Return Loss- Low Current, Low distortionApplication- IF Amplifier for LNB etc.Performance- ICC = 19.8mA TYP. (@Vcc = +3.3V)- GP = 23.5dB TYP. (@1GHz),24dB TYP. (@2.2GHz)- Po(1dB) = +7.5dBm TYP. (@1GHz)

+6 dBm TYP. (@2.2GHz)- NF = 4.0dB / 4.3dB TYP. (@1GHz/ 2.2GHz) - Return Loss : In:16dB TYP. Out: 17dB TYP.- 2fo= 65 dBc TYP. (@f=1GHz, Pout=-15dBm)- 6pin Super Mini mold Package

(2.0 x 1.25 x 0.9t mm)


2.0

mm

IN

OUT3

GNDGND

GND

1

4

52

6 VCC

0.9

mm

Pb Free Products

1.25 mm

μPC3241TB

3.3V DC-bias, Low Current Mid. Power IF-Amp.

C3Y


In Mass Production

29

3.3V3.3V--Bias, Wide Band IFBias, Wide Band IF--Amplifier Amplifier

Concept- 3.3V DC-bias, Wide Band IF-Amplifier - Good flatness and Better Return LossApplication- IF Amplifier for LNB etc.Performance - ICC = 13mA TYP. (@Vcc = +3.3V)- GP = 25dB TYP. (@1GHz), 24.5dB TYP. (@2.2GHz)- Po(1dB) = 1dBm TYP. (@1GHz),

-4dBm TYP. (@2.2GHz)- NF = 4.3dB / 4.5dB TYP.(@1GHz / 2.2GHz) - Return Loss : In: 13dB TYP. Out: 12dB TYP.- 2fo= 44 dBc TYP. (@f=1GHz, Pin=-40dBm)- 6pin Super Mini mold Package

(2.0 x 1.25 x 0.9t mm)


2.0

mm

OUT

IN3

GNDGND

VCC

1

4

52

6 NC *

0.9

mm

Pb Free Products

1.25 mm

C3W

μPC3240TB

3.3V DC-bias Wide Band IF-Amp.

* : NC: Non-Connection

NoteA NC pin is Non-connection in the mold package (When NC-pin is open state, It will get an influences of floating capacitance. Therefore, we recommend connect to NC pin and GND pin).

(Connected with Pin 5)

In Mass Production


30

3.3V3.3V--Bias, Medium Output Power IFBias, Medium Output Power IF--Amp. Amp.

Concept- 3.3V DC-bias, Wide Band/ Med. Power IF-Amp. - Good flatness and Better Return Loss- Low distortionApplication- IF Amplifier for LNB etc.Performance - ICC = 29mA TYP. (@Vcc = +3.3V)- GP = 25dB TYP. (@1GHz), 25.5dB TYP. (@2.2GHz)- Po(1dB) = +10dBm TYP. (@1GHz)

+8dBm TYP. (@2.2GHz)- NF = 4.0dB / 4.3dB TYP. (@1GHz/ 2.2GHz) - Return Loss : In:15dB TYP. Out: 20dB TYP.- 2fo= 57 dBc TYP. (@f=1GHz, Pout=-15dBm)- 6pin Super Mini mold Package

(2.0 x 1.25 x 0.9t mm)


2.0

mm

IN

OUT3

GNDGND

GND

1

4

52

6 VCC

0.9

mm

Pb Free Products

1.25 mm

C3V

μPC3239TB

3.3V DC-bias Mid. Power IF-Amp.

In Mass Production


31

High Gain Wide Band SiGe IFHigh Gain Wide Band SiGe IF--Amplifier Amplifier

Concept- Wide Band and Higher Gain- Good flatness and Better Return Loss- Lower Noise Figure, Low distortionApplication- IF Amplifier for LNB etc.Performance - ICC = 24mA TYP.(@Vcc=+5V)- GP = 38dB TYP.(@1GHz),38dB TYP.(@2.2GHz)- Po(1dB) = +11dBm TYP.(@1GHz),

+7.5dBm TYP.(@2.2GHz) - NF= 2.6dB TYP.(@1GHz, 2.2GHz)- Return Loss: In: 9dB TYP. Out: 10dB TYP.- 2fo= 58dBc TYP. (@f=1GHz, Pout=-15dBm)- 6pin Lead Less Mini mold Package

(1.5 x 1.1 x 0.55t mm)

6pin L2MM( 1.5 x 1.1 x 0.55t mm )

Higher gain (38dB TYP.)Lower NF (2.6dB TYP.)

Pb Free Products

μPC3236TK

1.5m

m

1.1mm

6

5

4

1

2

3

0.55

mm

OUT

IN

GNDGND

VCC

GND

6UIn Mass Production

32

Reference Only

Substrate: RO4003 (t=0.51mm) Rogers

a narrow micro strip line(W=0.2mm L=2.9mm)

IN

Vcc

GNDmicro strip line (50Ω)(W=1.05mm L=2.5mm)

C1：100pF C2：100pF

C3：1000pF

C4：1000pF

L1：56nH

OUT6pin 3pin

1pin

2,4,5pin

L2：2.2nH

R1：560Ω

INOUT

VCC=5VGND

The surface GND pattern of these area should be separated to make stability.

EC-μPC3236TK

ZS= ZL= 50Ω

A narrowstrip line

Evaluation Board of μPC3236TK

micro strip line (50Ω)

IN

OUT

VCC

33

High Gain Wide Band SiGe IFHigh Gain Wide Band SiGe IF--Amplifier Amplifier

Concept- Wide Band and High Gain- Good flatness and Better Return Loss- Lower 2nd Harmonics(2fo)Application- IF Amplifier for LNB etc.PerformanceICC = 26mA TYP.(@Vcc=+5V)- GP = 32.8dB TYP.(@1GHz),33.8dB TYP.(@2.2GHz)- Po(1dB) = +11dBm TYP.(@1GHz),

+8.5dBm TYP.(@2.2GHz)- NF = 4.0dB TYP. (@1GHz, 2.2GHz) - Return Loss: RLin, RLout > 10dB MIN.- 2fo= 70dBc TYP. (@f=1GHz, Pout=-15dBm)- 6pin Super Mini mold Package

(2.0 x 1.25 x 0.9t mm)


2.0

mm

OUT

IN3

GNDGND

VCC

1

4

52

6 GND

0.9

mm

High gain (>30dB)Lower Harmonics

Pb Free Products

In Mass Production

μPC3232TB

1.25 mm

C3S

34

Reference Only

Substrate: RO4003 (t=0.51mm) Rogers

INOUT

VCC=5VGND

EC-μPC3232TB

ZS= ZL= 50Ω

A narrowstrip line

Evaluation Board of μPC3232TB



IN

OUT

VCC

35

Concept- Wide band & Low Current version of µPC2709TB

Application- LNB IF-Amp, etc.

Performance- ICC =19.0mA TYP.(@Vcc=+5.0V)- GP =23.0dB TYP.(@f=1GHz), 23.0dB TYP.(@f=2.2GHz)- PO(1dB) = +6.5dBm TYP.(@f=1GHz),

+5.0dBm TYP.(@f=2.2GHz)- NF =4.5dB TYP./ 4.0dB TYP. (@1GHz/ 2.2GHz)- ΔGP :0.9dB(f=0.1 to 2.2GHz)- 6pinSMM PKG(2.0 x 1.25 x 0.9t mm)

μPC3223TBMedium Output Power IF AmplifierMedium Output Power IF Amplifier

2.0m

mOUT

IN

3

GNDGND

VCC

1.25mm

1

4

52

6

GND

0.9mm

Wide band & Low currentVersion of µPC2709TB

Pb Free Products

In Mass Production

C3J


36

Concept- Wide band & Low Current version of µPC2712TB

Application- LNB IF-Amp, etc.

Performance- ICC =9.0mA TYP.(@Vcc=+5.0V)- GP =21.5dB TYP.(@f=1GHz), 21.5dB TYP.(@f=2.2GHz)- PO(1dB) =-3.5dBm TYP.(@f=1GHz),

-5.5dBm TYP.(@f=2.2GHz)- NF = 4.3dB TYP. / 4.3dB TYP.(@1GHz/ 2.2GHz)- ΔGP : 0.8dB(f=0.1 to 2.2GHz)- 6pinSMM PKG(2.0 x 1.25 x 0.9t mm)

μPC3224TBWide Band IFWide Band IF--AmplifierAmplifier

Wide band & Low currentVersion of µPC2712TB

2.0m

mOUT

IN

3

GNDGND

VCC

1.25mm

1

4

52

6

GND

0.9mm

Pb Free Products

In Mass Production

C3K


37

Concept- Low Current and Wide band version of µPC3223TB

Application- IF-Amp for Multi Feed/ Muiti Output LNB, etc.

Performance- ICC =15.5mA TYP.(@Vcc=+5.0V)- GP =25dB TYP.(@f=1GHz), 26dB TYP.(@f=2.2GHz)- PO(1dB) =+7.5dBm TYP.(@f=1GHz),

+5.7dBm TYP.(@f=2.2GHz)- NF =5.3dB TYP./ 4.9dB(@1GHz/ 2.2GHz)- ΔGP = 1.0dB TYP. (f=0.1 to 2.2GHz)- 6pinSMM PKG(2.0 x 1.25 x 0.9t mm)

μPC3226TBMedium Output Power SiGe IFMedium Output Power SiGe IF--AmplifierAmplifier

2.0m

mOUT

IN

3

GNDGND

VCC

1.25mm

1

4

52

6

GND

0.9mm

Super Low currentVersion of µPC3223TB

Pb Free Products

In Mass Production

C3N


38

Concept- Super Low Current and Wide band version of µPC3224TBApplication- IF-Amp for Multi Feed LNB, BskyB, etc.

Performance- ICC= 4.8mA TYP.(@Vcc=+5.0V)- GP= 22dB TYP.(@f=1GHz), 22dB TYP.(@f=2.2GHz)- PO(1dB)= -6.5dBm TYP.(@f=1GHz),

-8 dBm TYP.(@f=2.2GHz)- NF= 4.7dB TYP./ 4.6dB TYP.(@1GHz/ 2.2GHz)- ΔGP = 0.5dB(f=0.1 to 2.2GHz)- 6pinSMM PKG(2.0 x 1.25 x 0.9t mm)

μPC3227TB

Super Low CurrentVersion of µPC3224TB

2.0m

mOUT

IN

3

GNDGND

VCC

1.25mm

1

4

52

6

GND

0.9mm

Pb Free Products

In Mass Production

C3P

Wide Band Wide Band SiGeSiGe IFIF--AmplifierAmplifier


39

5V5V--Bias Amplifier MMIC Series LineBias Amplifier MMIC Series Line--upup

24

26.0

4.8

15.5

24.5

9.0

19.0

14.0

25.0

12.0

12.0

22.0

25.0

26.0

ICC

(mA)

1.0+23 (1.0GHz)+16.5 (2.2GHz)

+11 (1.0GHz)+7.5 (2.2GHz)

+15.5(1.0GHz)+10.5(2.2GHz)

2.6(1.0GHz)2.6(2.2GHz)

38(1.0GHz)38(2.2GHz)μPC3236TK

0.4+4.0(1.0GHz)+1.5(2.2GHz)

-6.5(1.0GHz)-8.0(2.2GHz)

-1.0(1.0GHz)-3.5(2.2GHz)

4.7(1.0GHz)4.6(2.2GHz)

22.0(1.0GHz)22.0(2.2GHz)μPC3227TB

1.0--+8.5(1.0GHz)6.0(1.0GHz)23.0(1.0GHz)μPC2776TB

1.0+20.0(1.0GHz)+15(2.2GHz)

+7.5(1.0GHz)+5.7(2.2GHz)

+13.0(1.0GHz)+9.0(2.2GHz)

5.3(1.0GHz)4.9(2.2GHz)

25.0(1.0GHz)26.0(2.2GHz)

+5.0

μPC3226TB

2.5+21.0(1.0GHz)+16.0(2.2GHz)

+9.0(1.0GHz)+7.0(2.2GHz)

+15.5(1.0GHz)+12.5(2.2GHz)

3.7(1.0GHz)3.7(2.2GHz)

32.5(1.0GHz)33.5(2.2GHz)μPC3225TB

+11.0(1.0GHz)+8.5(2.2GHz)

-3.5(1.0GHz)-5.5(2.2GHz)

+6.5(1.0GHz)+5.0(2.2GHz)

+1.5(1.5GHz)

-

-

-

-

-

PO(1dB)

(dBm)

+15.5(1.0GHz)+12.0(2.2GHz)

+4.0(1.0GHz)+1.5(2.2GHz)

+12.0(1.0GHz)+9.0(2.2GHz)

+3.5(1.5GHz)

+3.0(1.0GHz)

+1.0(1.0GHz)

+13.5(0.5GHz)

+11.5(1.0GHz)

+10.0(1.0GHz)

PO(sat)

(dBm)

0.8+7.0(1.0GHz)+5.5(2.2GHz)

4.3(1.0GHz)4.3(2.2GHz)

21.5(1.0GHz)21.5(2.2GHz)μPC3224TB

0.8-6.5(1.0GHz)15.0(1.0GHz)

+5.0

μPC2708TB

1.0+23.5(1.0GHz)+17(2.2GHz)

4.0(1.0GHz)4.1(2.2GHz)

32.8(1.0GHz)33.8(2.2GHz)μPC3232TB

0.9+17.8(1.0GHz)+14.8(2.2GHz)

4.5(1.0GHz)4.0(2.2GHz)

23.0(1.0GHz)23.0(2.2GHz)μPC3223TB

1.0+10.0(1.5GHz)2.3(1.5GHz)20.5(1.5GHz)

+5.0

μPC3215TB

0.8-4.5(1.0GHz)20.0(1.0GHz)μPC2712TB

0.8-5.0(1.0GHz)13.0(1.0GHz)μPC2711TB

---

1.0

ΔGP

(dB)

-

-

OIP3

(dBm)

3.5(0.5GHz)

5.0(1.0GHz)

NF(dB)

VCC

(V)

μPC2710TB

μPC2709TB

Part No.

33.0(0.5GHz)

23.0(1.0GHz)

GP

(dB)

ΔGp : @f=1.0 to 2.2GHzNew Device, *1 : Under Development (Target Performance)*2 : Under Planning (Target Performance)

40

3V3V--Bias Amplifier MMIC Series LineBias Amplifier MMIC Series Line--upup

0.4----7.1 (1.0GHz)-8.9 (2.2GHz)---3.9(1.0GHz)

3.9(2.2GHz)22(1.0GHz)22(2.2GHz)4.35μPC3242TB *1

0.719.5(1.0GHz)15(2.2GHz)

+7.5 (1.0GHz)+6 (2.2GHz)---4.0(1.0GHz)

4.3(2.2GHz)23.5(1.0GHz)24(2.2GHz)19.8μPC3241TB

+3.3

+3.0

+3.0

VCC

(V)

1.012.5(1.0GHz)5.5(2.2GHz)

1 (1.0GHz)-4 (2.2GHz)---4.3(1.0GHz)

4.5(2.2GHz)25(1.0GHz)

24.5(2.2GHz)13μPC3240TB

1.021 (1.0GHz)15.5(2.2GHz)

+10 (1.0GHz)+8 (2.2GHz)

+12.5(1.0GHz)+10 (2.2GHz)

4.0(1.0GHz)4.3(2.2GHz)

25 (1.0GHz)25.5(2.2GHz)29μPC3239TB

--+8.0(0.9GHz)+7.0(1.9GHz)+7.0(2.4GHz)

+9.5(0.9GHz)+9.0(1.9GHz)+9.0(2.4GHz)

4.5(0.9GHz)4.5(1.9GHz)4.5(2.4GHz)

19.0(0.9GHz)21.0(1.9GHz)21.5(2.4GHz)

23.0μPC8181TB

--+8.0(0.9GHz)+7.0(1.9GHz)

+9.0(0.9GHz)+8.5(1.9GHz)

6.5(0.9GHz)7.0(1.9GHz)

13.0(0.9GHz)15.5(1.9GHz)26.5μPC2762TB

+9.5(0.9GHz)+9.0(1.9GHz)+8.0(2.4GHz)

+11.5(0.9GHz)+9.5(1.5GHz)

+9.5(0.9GHz)+6.5(1.9GHz)

--12.5(1.9GHz)

-

-

-

-

PO(1dB)

(dBm)

+11.0(0.9GHz)+10.5(1.9GHz)+10.0(2.4GHz)

+12.5(0.9GHz)+11.0(1.5GHz)

+11.0(0.9GHz)+8.0(1.9GHz)

--6.0(1.9GHz)

-3.5(1.0GHz)

-7.0(1.0GHz)

0(1.0GHz)

-10.0(1.0GHz)

PO(sat)

(dBm)

--4.5(0.9GHz)4.5(1.9GHz)5.0(2.4GHz)

21.5(0.9GHz)20.5(1.9GHz)20.5(2.4GHz)

30.0μPC8182TB

--6.0(1.0GHz)12.0(1.0GHz)7.5μPC2745TB

--6.0(0.9GHz)6.0(1.5GHz)

21.0(0.9GHz)21.0(1.5GHz)36.0μPC2771TB

--5.5(0.9GHz)5.5(1.9GHz)

20.0(0.9GHz)21.0(1.9GHz)27.0μPC2763TB

--3.2(0.9GHz)4.0(1.9GHz)

14.5(0.9GHz)16.0(1.9GHz)6.0μPC2749TB

--2.8(1.0GHz)19.0(1.0GHz)5.0μPC2748TB

-

-

ΔGP

(dB)

-

-

OIP3

(dBm)

3.3(1.0GHz)

4.0(1.0GHz)

NF(dB)

5.0

7.5

ICC

(mA)

μPC2747TB

μPC2746TB

Part No.

12.0(1.0GHz)

19.0(1.0GHz)

GP

(dB)

ΔGp : @f=1.0 to 2.2GHzNew Device, *1 : Under Development (Target Performance)*2 : Under Planning (Target Performance)

41

Matrix SW MMIC

IF AmpIF Amp

Mixer

DRO

LNA LNAMatrix SW

to In Door Unit

4 x

2 S

W M

atrix

4 x

2 S

W M

atrix

DRO

42Note) Isolation D/U (Desire Un-desire) ratio:

ISL = |(signal Leakage (off-state) ) – ( Insertion loss (on-state) )| @worst-mode

Roadmap of Matrix SW MMICRoadmap of Matrix SW MMIC

’06-CY‘05 ’07 ’08

2 x 2 SW2 x 2 SW2 x 2 SW

4 x 2 SW4 x 2 SW4 x 2 SW

μμPG2054KPG2054K

Higher IsolationHigher Performance

GaAs GaAs & Si

ISL D/U: ISL D/U: 440dB TYP.0dB TYP.

μμPD5716GR(+5V)PD5716GR(+5V)μμPD5715GR(+3.3V)PD5715GR(+3.3V)

ISL D/U :ISL D/U :30dB TYP.30dB TYP.

CMOS 4x2 SW

Various Matrix SwitchesWide BandLow O.P. Voltage

((μμPG2053K)PG2053K)

with enable external pins(each OUT port)

μPG183GRISL D/U: 23dB TYP.

μPG188GR30dB TYP.

μPG181GRISL D/U: 30 dB TYP.

Dec

oder

GaAs 4x2 SW

Dec

oder

CMOS 4x2 SWμPD57xx *2

’09

CMOS 4x2 SW +Control + IF-Amp

μμPD5720K(+5V)PD5720K(+5V)ISL D/U : ISL D/U :

35dB TYP.35dB TYP.

Dec

oder

Discontinue

Discontinue

Discontinue

*2 : Under Planning

4x2SW

Cont. cir.

4x2SW

Cont. cir.

CMOS 4x2 SW +Control

*1 : Under Development

μPD5739T7A *1

43

Comparison with 4x2 SW Matrix productsComparison with 4x2 SW Matrix products

10dB

31dB

---

8.5dB

1.0dB

250-2150MHz

MP

No

5.0V

CMOS

QFN-20

SKY13272-340LF

10dB

30dB

9.0dB

2.0dB

250-2150MHz

MP

No

5.0V

CMOS

QFN-20

SKY13292-365LF

14dB

36.5dB

43dB

6.5dB

N/A

200-3000 MHz

---

No

5.0V

CMOS

QFN-24

HMC596LP4

13dB

29dB

36dB

6.7dB

0.7dB

250-2150MHz

MP

No

5.0V

CMOS

TSSOP-16

μPD5716GR

---MP---MPMPMPDevelopment Status

38.5dB(35dB)------37dB46dB42dBIsolation@2150MHz

1.5dB(1.0dB)1.5dBN/A0.5dB0.5dBInsertion Loss Flatness@Freq

NoNoNoNoNoYesAll-Off(Terminated)function

13dB15dB10dB20dB15dB16dBOutput RL(whole freq range)

33dB28dB45dB31.0dB40dB35dBIsolation D/U Ratio@2150MHz

200-3000 MHz

950-2150 MHz

250-2150MHz

700-3000 MHz

950-2150 MHz

250-2150 MHzFrequency Range

3.3V5.0V5.0V5.0V5.0V5.0VVoltage

7.5dB(7dB)9dB6.0dB6.0dB7.0dBInsertion Loss@2150MHz

CMOS

QFN-20

A7531B

AMIC

CMOS

QFN-20

A7533

CMOS

QFN-20

SKY13293-340LF

Skyworks

Process

Package

HMC276LP4

HittiteNEC

GaAsHEMT

QFN-24QFN-20QFN-20

GaAsHJ-FET

μPG2054KμPD5720K

CMOS

μPD5720K achieves GaAs-performance with CMOS technology

44

Note : Isolation = Signal Leakage (off-state) Isolation D/U (Desire Un-desire) ratio = | ( Isolation (off-state) ) - ( Insertion loss (on-state) )|

Performance- Insertion Loss = 7.0dB TYP./ 9.0dB MAX.- Insertion Loss Flatness = 0.5dB TYP.- Isolation Note = 42dB TYP. / 37dB MIN.- Isolation D/U ratio Note = 35 dB TYP.- Isolation of Disabled Mode = 40dB TYP.

(@f=0.25G to 2.15GHz, Zo=50Ω for each Port,Worst Mode)

High IsolationCMOS 4x2 Switch Matrix ICμμPD5720KPD5720K

With Enable external pins for OUTs port Enabled/Disabled

ConceptWith enable external pins (each OUT port)

PKG20pin QFN(0.5pich): 3.8x3.8x0.9(t) mm

Control Pin- VCONT1,2,3,4 = +5V / 0V, with Decoder Circuit- VDD= +5V - Enable Control Voltage VEA1,2 = +5V / 0VPb Free Products

2

1000 pF

1000 pF

1000 pF

1000 pF

1000 pF

1000 pF

In Mass Production

for Univ. Dual/Quadfor Univ. Dual/QuadSW BOX, etcSW BOX, etc

(Terminated)

45

CMOS 4x2 IF Switch μμPD5716GRPD5716GR

μPD5715GR Typical RF Performance

Freq. InsertionLoss RL(out)

15dB TYP.0.25 to 0.95GHz0.95 to 2.15GHz

Isolation D/U ratio

35dB TYP.29dB TYP.

IDD

0.5mAMAX.

SWVCONT1 to 4

=+5V/0V

Bias

6.7dB TYP.

ConseptReplacement for uPG183GR

PKG16pin HTSSOP: 5.5 x 5.2 x 0.9t mm

Control Pin4pins(VCONT1 to VCONT4) +VDD(with Decoder Circuit)

Backside: GND

OUT1IN-B IN-A

OUT2IN-C IN-D GG VC3 VC4

VDD VC2VC1G

G

G

4:16

DEC

OD

ER

Pb-Free Products

VDD

VDD

=+5V

In Mass Production


Note) Isolation D/U (Desire Un-desire) ratio: ISL = |(signal Leakage (off-state) ) – (Insertion loss (on-state) )| @worst-mode

1000 pF

1000 pF

1000 pF

1000 pF

1000 pF

1000 pF

46

CMOS 4x2 IF Switch μμPD5715GRPD5715GR

μPD5715GR Typical RF Performance

Freq. InsertionLoss RL(out)

15dB TYP.0.25 to 0.95GHz0.95 to 2.15GHz

Isolation D/U ratio

35dB TYP.29dB TYP.

IDD

1uAMAX.

SWVCONT1 to 4

=+3.3V/0V

Bias

6.7dB TYP.

ConseptLow Voltage Operation

PKG16pin HTSSOP: 5.5 x 5.2 x 0.9t mm

Control Pin4pins(VCONT1 to VCONT4) +VDD(with Decoder Circuit)

Backside: GND

OUT1IN-B IN-A

OUT2IN-C IN-D GG VC3 VC4

VDD VC2VC1G

G

G

4:16

DEC

OD

ER

Pb-Free Products

VDD

VDD

=+3.3V

In Mass Production


Note) Isolation D/U (Desire Un-desire) ratio: ISL = |(signal Leakage (off-state) ) – (Insertion loss (on-state) )| @worst-mode

1000 pF

1000 pF

1000 pF

1000 pF

1000 pF

1000 pF

47

Performance- Supply Current total = 40mA TYP.- Isolation D/U ratio = 30dB TYP. - Power Gain = 18dB TYP.- Gain Flatness < 1.0 dB- Po(1dB)= +5.5dBm TYP. (@2.15GHz)

(@f=950M to 2150MHz, Zo=50Ω each)

4x2 SW Matrix with IFA and ControlμμPD5739T7APD5739T7A

Concept- 4x2 switch matrix with integrated IFAMP

and switch control - Tone/Voltage

PKG28pin QFN(0.5pich): 5.0x5.0x0.72(t) mm

Control PinVdd =+3.3V, Vcc1,2 =3.3V,Tone1,2 = 0/ 22kHz, POLA1,2 = 13V/ 18V

Pb Free Products

Note) Isolation D/U (Desire Un-desire) ratio: ISL = |(Signal Leakage (off-state) ) – (Power Gain (on-state) )| @worst-mode

DS : Oct., ‘09MP : Feb., ‘10

Under Development

4x2 Switch Matrix

IFAMP

IFAMP

IN-A

IN-B

IN-C

IN-D

VddVcc1

Vcc2

POLA1TONE1TONE2 POLA2

OUT1

OUT2

Switch Controller

48

Vcc1(IFAMP) OUT1TONE1 POLA1 =Enable1 Output Signal22kHz 0-14V 3.3V IN-A

0 0-14V 3.3V IN-B0 15.5-19V 3.3V IN-C

22kHz 15.5-19V 3.3V IN-D

Vcc2(IFAMP) OUT2TONE2 POLA2 =Enable2 Output Signal22kHz 0-14V 3.3V IN-A

0 0-14V 3.3V IN-B0 15.5-19V 3.3V IN-C

22kHz 15.5-19V 3.3V IN-D

CONT2 Signal Input

CONT1 Signal Input

μPD5739T7A Functional Diagram and PIN Connections

CONT1

CONT2

GNDIN-B

GND

IN-D

GND

IN-C

Aou

t2

IN-A

Vcc

1

POLA1TONE1

POLA2TONE2

GND

Aou

t1enable1

GNDGND

4x2SW

enable2GND Vdd

GN

DG

ND

Vcc

2

~~

GN

DG

ND

Vcc1 =3.3V

Vdd=3.3V

Vcc2 =3.3V

POLA= 13V/ 18V

POLA= 13V/ 18V

Tone= 0/ 22kHzTone

= 0/ 22kHz

GN

DG

ND

GN

DG

ND

1000pF

1000pF

1000pF100pF100pF

100pF

100pF

100pF 100pF

330pF

330pF

47nH

47nH

TOP VIEW

Truth Table

IN-B

IN-C

IN-D

OUT2

IN-A

OUT1

Matrix Decoder

49

Ku-band(VSAT)Prescaler

SiGe MMIC

Prescaler PLL Synthesizer

LPF

OSC

50

Ku-Band(VSAT) Prescalers

1/8 Divide

1/4 Divide

1/8 Divide

Function

Non-Promotion

in MP.

Non-Promotion

Status

Icc=50mA

Icc=48mA

Icc=48mA

(UHS2)8-16GHz 5V8pL2MMμPB1514TU



NoteFeaturesPKGPart Name

VCDRO

PLL

DRO

3~7GHz

LO=13GHz

IF0.5-2.5GHz

RF10.5-12.5GHz

1/n

13GHz

μPB1513TU n=4

8dB

LPF

μPD5612K, etc

VSAT

51

Applications- Ku-band VSAT Radios- Point-to-Point / Multi-Point RadiosFeatures- Operating frequency : fin= 5 to 13 GHz- Division ratio : 1/4- Low current consumption : Icc=48mA(@ 5V)- Input sensitivity :

Pin=-8 to -5dBm (@fin=5 to 6GHz)Pin=-8 to 0dBm (@fin=6 to 12GHz)Pin=-5 to 0dBm (@fin=12 to 13GHz)

- Phase noise : PN=-150dBc/Hz (@ 100kHz)- Output power : Pout=-4dBm (@ f=13GHz)- High-density surface mounting

Package : 8pin L2MM (2.0 x 2.0 x 0.5t mm)

In1

In2

GND

Vcc

Out1

Out2

GND

VccVoltage Regulator

13G

Hz

1/2

6.5G

Hz

1/2

1

6

3

2

5

7

8

4

In1

In2In2

GND

Vcc

Out1

Out2Out2

GND

VccVoltage Regulator

13G

Hz

1/2

6.5G

Hz

1/2

1

6

3

2

5

7

8

4

13GHz13GHzOperationOperation

Ku-Band(VSAT) Prescalers

2mm2mm

Top view Bottom View

μPB1513TUμμPB1513TUPB1513TU1/4 Fixed divide SiGe Prescaler

0.5m

m

5.0

In Mass Production

Pb Free Products

52

http://http://www.necel.comwww.necel.com/microwave//microwave/

NEC ElectronicsNEC ElectronicsMicrowave Devices Web SiteMicrowave Devices Web Site

AVAILABLE!AVAILABLE!-- Data Sheets in PDFData Sheets in PDF-- Device ParametersDevice Parameters

-- CAD DataCAD Data-- EvaluationEvaluation--Board InformationBoard Information

53

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