Russian-French collaboration in the development of layered nanostructures

for THz technology

G.N. Izmaïlov, O.A. Klimenko, Yu. A. Mityagin, V.N. Murzin

Outline of Presentation

2

The results of joint work with the Charles Coulomb Laboratory of University of Montpellier 2, France were the topic of my report "Russian-French cooperation inthe development of layered nanostructures for THz technology ".

First of all, I need to explain the feasibility of works,then talk about the physics of some phenomena that served as the subject of research;mention those involved in the development;present the results of research;make conclusions

Terahertz range

3

Where is THz radiation applicable •THz radiation finds applications in astronomy in the analysis of the chemical composition of stars and planets, in biology and medicine, in security, where it is necessary to determine the chemical composition of the material at a distance, without destroying it.•A very popular application is the control of product quality. The fact is that the presence of microcracks and microcavity distorts the interference pattern, even if they are concealed in the depth of material.•Also is required the development of telecommunications in the next five to seven years to move to the transfer of information to Terahertz frequencies•In general, such a large set of different applications provokes the development of devices that are adapted precisely at Terahertz frequency range.

Terahertz range

4

THz astronomy

Terahertz radiation from the Sun

Terahertz range

5

MethamphetamineMDMA Aspirin

Production quality control

Detection of Hazardous SubstancesTelecommunication

= 0.3 – 10 THz = 10 – 333 sm-1 = 30 µm – 1 mm

Art history & restoration

Двумерная электронная плазма

3D плазма:

2D плазма:

6

*3

2

3,

4

m

ne DDp

km

kne Dp

*

222

ε2

ε1

k

1p

2D plasma:

7

km

kne Dp

*

222

21*

22

1

4

m

kne Dp

2-D electronic plasma

3D plasma:

*3

2

3,

4

m

ne DDp

ε2

ε1

ε2

ε1

d

k

1p

2p

k

2D plasma:

8

km

kne Dp

*

222

21*

22

1

4

m

kne Dp

km

dne Dp

2*

22

2

2

2-D electronic plasma

3D plasma:

*3

2

3,

4

m

ne DDp

km

kne Dp

*

222

21*

22

1

4

m

kne Dp

km

dne Dp

2*

22

2

2

kpcmp22

ε2

ε1

ε2

ε1

d

k

1p

2p

k

2D plasma:

2D in a magnetic field:

*meBc 9

2-D electronic plasma

3D plasma:

*3

2

3,

4

m

ne DDp

2D electron plasma in the channel of FET

transistor

10

Channel

Vg

Drain

Gate

Source

D

D

D

S

S

S

Typical dimensions of the transistor:

Distance drain-source ~ 1 micron

Gate length = 0.1 m

Beam shutter 10 - 100 microns

Pad size ~ 100 microns

The emission wavelength 100 - 1000 m

2D electron plasma in the channel of FET

transistor

11

tntEEµnej ACACACACAC cos ,cos ,

Канал

Vg

Drain

Gate

Source

ACjU tjAC 2cos

D

D

D

S

S

S

Typical dimensions of the transistor:

Distance drain-source ~ 1 micron

Gate length = 0.1 m

Beam shutter 10 - 100 microns

Pad size ~ 100 microns

The emission wavelength 100 - 1000 m

Dyakonov-Shur model

12M. Dyakonov and M. Shur, IEEE Trans. El. Dev. 43, 380 (1996)

, , thChGe UxUUe

xCUn

,x

U

m

e

x

vv

t

v

0

x

vn

t

n ee

)(4

1)0()(

0

2

fU

UxULxUU a

0,

,cos,0 0

tLj

tUUtU a

Boundary conditions:

M. Dyakonov and M. Shur, Phys. Rev. Lett. 71, 2465 (1993)

(assymetry!!)

Dyakonov-Shur model

13

Resonant detection

Nonresonant detection

,1

,1

14

14)(

220

2

nL

sf

221

21)(

f

ТГц 11.0~20

L

s 7,... 5, 3, ,1n

Ls

sL

21

sL

,1Conditions :

or

Conditions :

С

С

С

И

И

И

)(4

1

0

2

fU

UU a

M. Dyakonov and M. Shur, IEEE Trans. El. Dev. 43, 380 (1996)M. Dyakonov and M. Shur, Phys. Rev. Lett. 71, 2465 (1993)

The detection of THz radiation by FET

14W. Knap et al. JAP, 91, 9346 (2002)

History of innovation

15

  In 2002y. W Knap (Montpellier, France) for the first time saw the Terahertz FET photoresponse - it is what was predicted in 1993 by Dyakonov and Shur (St. Petersburg, Russia)In the 2006y-9y papers, the resonance detection regime has been studied in more details. It was seen that the resonance peak becomes more pronounced with decreasing temperature, i.e. a decrease of the lenght of plasma waves. The peak position varies with the radiation frequency, as was predicted by Dyakonov-Shur theory. However, the experimentally obtained peak figure of merit is much lower than the calculated value.Key results were obtained in 2009y.The influence of a magnetic field on a photoresponse has been studied in 2009- 2011yy.

Terahertz reseaches

16

Theory

М. И. ДЬЯКОНОВ

М. Б. ЛИФШИЦ

Experiment

W. КNAP D. КОКIIYA

F. ТЕPP Н.В. ДЬЯКОНОВА

Terahertz radiation Emission andDetection Laboratory(Montpellier)

Facilities

• Fourier spectrometer Brucker FX66S. frequency range 0,3-200 THz (10-6000 cm-1).• Cryostat with a superconducting magnet. The magnetic field up to 16 T, the temperature of the sample to 2-300 K.• Backward wave oscillator. • Molecular CH3OH laser pumped by CO2. The frequency of radiation 2.5 THz.• Si bolometer. Sensitivity 2x10-13 W/Hz0.5. Compatible with the Fourier spectrometer.• The quantum cascade laser. The frequency of radiation 3.76 THz .• Gunn diode. The frequency of radiation 0.3 THz

17

The investigated transistors

18

Material Type Mobility at 300 K, cm2 / V · s

Mass of an electron in a channel

Channel length, μm

Gate length, μm

GaN/AlGaN HEMT 1500 0,2 me 3,9 0,25

GaAs/AlGaAs HEMT 8500 0,067 me 5 0,15

Si MOSFETCMOS

100 0,19 me 0,13 0,13

Si SOI 660 0,19 me 10 10

InAlAs/InGaAs HEMT 11500 0.049 me 2,6 0,8

18

Grant of the President of the Russian Federation № 14.122.13-4848 МК for the support of young Russian scientists and leading scientific schools : «Study of the interaction of electromagnetic Terahertz radiation with two-dimensional electron gas in GaAs / GaAlAs and InAlAs / InGaAs HEMT structures with a view to develop a new type of fast matrix detectors».

19

1. O.A. Klimenko et al., Terahertz Response of InGaAs Field Effect Transistors in Quantizing Magnetic Fields // Appl. Phys. Lett., 2010, V. 97, P. 0022111

2. W. Knap et al., Plasma excitations in field effect transistors for terahertz detection and emission // C.R.Physique, 2010, V. 11, Issues 7-8, P. 433-443

3. M. Sakowicz et al., Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects // J. Appl. Phys., 2011, V.110, P.054512

4. C. Drexler et al., Helicity sensitive terahertz radiation detection by field effect transistors // J. Appl. Phys., 2012, V.114, P.124504

5. O. A. Klimenko et al., Temperature enhancement of terahertz responsivity of plasma field effect transistors // J. Appl. Phys., 2012, V.112, P.014506

Publication on the work

The results ofthe collaboration

20

The relations between characteristics of the channel field-effect transistor with photo response are established, which are important for a more complete understanding of the processes in the channel, where the generation of THz radiation is occurred, and for the further development of the theory. Experimental confirmations of the theoretical conclusions were performed at various temperatures from room temperature to liquid helium. The theoretical description of the generation processes now includes the presence of a magnetic field cases.Experimental studies of the photo response of FETs in a magnetic field, as directed by a more detailed study of the phenomenon, confirmed a new theoretical model. The detecting elements is obtained that can be used as a basis for the development of next-generation units of compact and changing the generating wavelength.Prototypes of devices (laboratory samples) to work in the THz range are created.As a result of research collaboration we note the strengthened scientific communications between different groups and different schools of the EU and Russia

Thanks

for your attention

Thanks

План доклада

I. Высокочастотные свойства 2D электронной плазмы

II. Детектирование ТГц излучения 2D электронной плазмой в канале полевого транзистора

III. Связь нерезонансного фотоотклика и проводимости канала полевого транзистора

IV. Влияние магнитного поля на эффект детектирования ТГц излучения 2D электронной плазмой в канале полевого транзистора

V. Выводы Работа проводилась совместно с Лабораторией им. Шарля Кулона университета Монпелье 2, Франция. 22

В существующих транзисторах:n2D ~1012 см-2, d ~10 нм, vdr ~107 см/с, s ~108 см/с, fp ~1 ТГц

23

*2

24

m

dnes D

skP

kP ~•Холловские структуры•Область канала полевого транзистора вне затвора

•Область канала полевого транзистора под затвором

gD Vfn 2

Двумерная электронная плазма

The detection of THz radiation by FET

24

Ширина линии = 1/ ~ 3

µ = 36 000 см2/В·с ~ 13

A. El Fatimy et al. APL, 89, 131926 (2006)

Ширина резонанса больше, чем в теории*0,

)(

22 m

VVe

LL

s thgP

The detection of THz radiation by FET

25

Теория Дьяконова-Шура

Экспериментальная геометрия

S D

Только продольные моды

Все моды возможны

L

w

L

WS D

y

x

• W/L ~ 100• шероховатости на границах

L = 400 нм

Wgr = 300 нм

W = 200 нм

-0,4 -0,3 -0,2

15 30 45 60

2

4

6

84

3

2

1

Qu

alit

y F

acto

r

Temperature (K)

A B

D

C

60 K 35 K 25 K15 K

10 K

Ph

oto

resp

on

se (

arb

. Un

its)

Gate voltage (V)

A. Shchepetov et al. APL, 92, 242105, (2008)S. Boubanga-Tombet et al. APL, 92, 212101, (2008)

f = 0.54 TГц

InGaAs/InAlAs HEMT

Многоканальные транзисторы

Results. GaN HEMT

-5.6 -5.4 -5.2 -5.0 -4.8 -4.60

10

20

30

40

50

60

(4)

(3)

(2)

Pho

tore

spon

se (m

V)

Vg (V)

(1) T = 275K, A = 1.2910-4 V²

(2) T = 175K, A = 1.8310-4 V²

(3) T = 75K, A = 3.9610-4 V²

(4) T = 5K, A = 8.5510-4 V²

(1)

GaN

26

экспериментрасчет

The detection of THz radiation by FET

Detection in a magnetic field. Lifshitz-Dyakonov model

27

,vvBm

eU

m

evv

t

v

0

vUdivt

U

Boundary conditions:0 ,0 UUv

tUUtU a cos,0 0

x

x

при

0 при

zB

M. B. Lifshits and M. I. Dyakonov, Phys. Rev. B 80, 121304(R) (2009)

1

Lorentz force

Conductivity oscillation

xx