Sanae Boulay, Limelette, Nov 05th 2009 1/20
S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous
Novel Ultra Low Noise Amplifiers based on
InGaAs/InAlAs pHEMTs
University of Manchester
Sanae Boulay, Limelette, Nov 05th 2009 2/20
What are the SKA requirements? Manchester ‘foundry’ capabilities : work flow Process technology: key points of InP LNA LNA fabrication and results Achievements
Outline
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 3/20
What are the SKA requirements
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
LNA at frequency range from : 0.3 GHz to 2 GHz (Ultra Wide Band)
Ultra Low Noise: try to reduce NF ~ <0.4 dB.
Low Power dissipation ~< 100mW
Low cost : transfer to mass production (>> 1 Million LNAs)
What’s available in the market? Nothing that fit the bill yet!
•too expensive, power hungry, MIC (large size), limited frequency band.
Sanae Boulay, Limelette, Nov 05th 2009 4/20
What do we bring to the project?
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
A cost effective solution :
1. Optical lithography = low cost
2. Single chip MMIC!
-New type of material based on InP (low leakage current, High VBR )
-Large periphery active device (up to W=1.2mm)
-devices easy to match
Sanae Boulay, Limelette, Nov 05th 2009 5/20
Introduction : objective of this work Manchester foundry capabilities : work flow Process technology: key points of InP LNA LNA fabrication and results Conclusion and future work
Outline
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 6/20
Material growth (MM, JS)
Fabrication (AB, SB, JS)
DC and RF Characterization & Device modelling (BB, AS)
Individual components
Design (BB, AS)
Work Flow
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 7/20
LNA circuit design (BB, AS)
LNA layout design (AB, SB)
LNA fabrication (AB, SB)
Integration in full LNA process
Material growth (MM, JS)
Fabrication (AB, SB, JS)
DC and RF Characterization & Device modelling (BB, AS)
Individual components
Design (BB, AS)
Work Flow
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
LNA characterisation
(Selex, MC2, Uni of Man)
Sanae Boulay, Limelette, Nov 05th 2009 8/20
Introduction : objective of this work Manchester foundry capabilities : work flow Process technology LNA fabrication and results Conclusion and future work
Outline
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 9/20
•First ever demonstrated large periphery InP based pHEMT.
•On state gate leakage as low as 0.5μA at a typical low noise bias of 1V, 60 x lower (Bouloukou et al, HETECH, 2007)
[1]: R. T. Webster, et al, IEEE Electron Device Letters, vol. 21, 193-5, 2000
Key point: New type of material
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Typical InGaAs/InAlAs pHEMT experimental gate current curves
Typical 0.15 μm x 40 μm gate InP-based HEMT [1]
Sanae Boulay, Limelette, Nov 05th 2009 10/20
-12 -10 -8 -6 -4 -2 0
-14
-12
-10
-8
-6
-4
-2
0
Ig<2A at Vg=-10V
Vg (V)
Key point: High break down Voltage
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
High break down voltage (> 10V up to 20V) and low leakage levels make it possible to use
large periphery devices (commonly used for high-power operation) for low noise operation
Ig (A
)
2x75m Gate periphery
Sanae Boulay, Limelette, Nov 05th 2009 11/20
• Larger geometries lead to lower Rn ,
•Low Rn allows for a closer match between NF and NFmin
• Closer match enables less complex low noise amplifier (LNA) designs
• less integrated passives
• less added noise sources
22
mgk
Rn
)1(1
422
2
0
min
ss
soptn
ZR
FF
Low NFmin and low Rn are key for low frequency LNA designsLarge periphery devices essential
Key point: reduction in Rn and NF
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 12/20
Introduction : objective of this work Manchester foundry capabilities : work flow Process technology: key points of InP LNA LNA fabrication and results Conclusion and future work
Outline
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 13/20
LNA design study
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Design Technology pHEMT NF Freq range
D1 Double stage MIC-off chip matching
4x200m 0.4dB 0.2 to 2GHz
D2 Double stage MMIC 4x200m 0.65dB 0.2 to 2GHz
D3 Single stage MMIC 4x200m 0.95dB 0.2 to 2GHz
2nd Generation LNA
D2
D3
1st Generation LNA done, tested on 2’’ wafers.Packaging studies in parallel With RFMOD.
Dimensions:X = 1.48 mmY = 1.24 mm
Sanae Boulay, Limelette, Nov 05th 2009 14/20
LNA Process Fabrication
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
10 steps process:-pHEMTs, Lg=1m, W= 800μm-MIM passives-NiCr resistors
pHEMTs
Resistors
Capacitors
Inductors
All CPW technology!
Sanae Boulay, Limelette, Nov 05th 2009 15/20
Single-stage circuit; Full MMIC measurements
Measurement results (SELEX)
LNA Measurements SELEX
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Error in the layout design (short in all the double satge LNAs)And ground plane not well defined in first run addressed in newer runs
Unfortunately:
Sanae Boulay, Limelette, Nov 05th 2009 16/20
1 2 3 40 5
-50-40-30-20-10
010
-60
20
Frequency (GHz)
S-P
aram
eter
s (d
B) S(2,1)
S(1,2)
MeasuredSimulated
S Parameters of a single stage LNA, SELEX
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
VDD = 3V ; Id = 15 mA Pdiss = 45 mW
Sanae Boulay, Limelette, Nov 05th 2009 17/20
1 2 3 40 5
-20
-15
-10
-5
-25
0
Frequency (GHz)
S-P
aram
eter
s (d
B) S(1,1)
S(2,2)
MeasuredSimulated
VDD = 3V ; Id = 15 mA Pdiss = 45 mW
S Parameter of a single stage LNA, SELEX
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Sanae Boulay, Limelette, Nov 05th 2009 18/20
InP MMIC Single Stage XMBE#144 DEVICES N3 to N6
0
0.5
1
1.5
2
2.5
3
0.0E+00 5.0E+08 1.0E+09 1.5E+09 2.0E+09 2.5E+09 3.0E+09 3.5E+09
freq(Hz)
NF
(dB
) NF(25mA) -N3
NF(25mA)-N4
NF(25mA)-N5
Best data at 25mA NF ~ 1.5dB to 2dB from 1 to 2.5 GHz
Noise measurements of a single stage LNA, MC2
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
At 25 mA drain current, VDD=3V => Pdiss=75mW!
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Full active and passive device libraries.
Demonstrated quality requirements:
reliability, reproducibility of the fabrication process.
Encouraging results with NF~1.5 to 2dB single stage LNA from 1GHz to 2GHz and Pdiss~75mW.
Optimization of the 2nd generation LNA design based on measurements …
Transfer the process on 2’’ wafer: homogeneity, and reliability of the process.
Effect of packaging.
3rd Generation LNA (with new pHEMTs structures, High Gm)
New fabrication method for very low cost sub-micron (0.5 m) technology.
Future work
Achievements and future work
Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs
Achievements
Sanae Boulay, Limelette, Nov 05th 2009 20/20
Any Questions?
Thank you for your attention