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S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
• Bias: well ABOVE breakdown
• Geiger-mode: it’s a TRIGGER device!!
• Gain: meaningless ... or “infinite” !!
• Bias: slightly BELOW breakdown
• Linear-mode: it’s an AMPLIFIER
• Gain: limited < 1000
Avalanche PhotoDiode Single-Photon Avalanche Diode
APD SPAD
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
for SPAD operation anywayfor SPAD operation anyway
mandatory
to avoid local Breakdown, i.e.
• edge breakdown guard-ring feature
• microplasmas uniform area, no precipitates etc.
but for good SPAD performance.....but for good SPAD performance.....
further requirements!!
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Thin Si SPAD Thick Si SPAD
Planar structure
typical active region:
20 m diameter
1 m thick
Reach-Through structure
typical active region:
200 m diameter
30 m thick(PerkinElmer modules SPCM-AQR)
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Passive quenching is simple... Passive quenching is simple...
Current Pulses
Diode Voltage
… … but suffers frombut suffers from
• long, not well defined deadtime
• low max counting rate < 100kc/s
• photon timing spread
• et al
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
ActiveActive quenching….quenching….
...provides:...provides:• short, well-defined deadtime
• high counting rate > 1 Mc/s
• good photon timing
• standard logic output
Output Pulses
P.Antognetti, S.Cova, A.LongoniIEEE Ispra Nucl.El.Symp. (1975)Euratom Publ. EUR 537e
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Earlier modules
in the 80’s
Compact modules
in the 90’s
Integrated AQC
today
AQC evolution
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Recent AchievementRecent Achievement
• Microelectronic Single-Photon Detector
for studies on Single-Molecule Dynamics
collaboration with X. Sunney Xie, Harvard University, Dept. of
Chemistry and Chemical Biology
Reference:H. Yang, G. Luo, P. Karnchanaphanurach, T.M. Louie, I. Rech, S.Cova, L. Xun, and X. Sunney Xie, “Single-Molecule Protein Dynamics on Multiple Time Scales Probed by Electron Transfer”, SCIENCE, Oct.10, 2003, Vol.302, 262-266
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
However: the best commercially available Photon Counting Modules
DO NOT have adequate performance in terms of picosecond-resolution, high detection efficiency and low-noise
Xie’s idea: to probe Single-Molecule Protein Dynamics by a correlation analysis offluctuations in real time of fluorescent photon delay with respect to laser excitation
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
SPTM Single Photon Timing Modulefor Single-Molecule Experiments
FWHM=60ps
• High Time-resolution: 60ps • Low Dark Counts: down to 5 c/s• Quantum Detection Efficiency: 45% @ 500nm
• Single power supply +15V• Controlled Temperature (Peltier cell)• Software controlled settings• RS-232 data transmission
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Recent AchievementRecent Achievement
• Ultrasensitive Capillary Electrophoresys (CE)
Microchip for DNA fragment separationcollaboration with
M. Chiari, CNR Inst. of Chemistry and Molecular Recognition, Milano
Reference:
I. Rech, A. Restelli, S. Cova, M. Ghioni, M. Chiari, ad M. Cretich,
“Microelectronic Photosensors for Genetic Diagnostic Microsystems”
Journal of Sensors and Actuators – B , in press 2004
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
DNA Fragment separation
Electropherogram
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
SeparationInjection
Sample
Buffer
Waste
Chip Electrophoresis
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
121416181101121141161181
0
10000
20000
30000
40000
50000
60000
70000
80000
Static measure5ng/ul
0,5ng/ul
0,05ng/ul
100pM oligonucleotide labelled with CY 5
300
400
500
600
700
800
900
1000
1100
1200
1300
0 50 100 150 200Time [Sec.]
Cou
nts
[c/s
]
S/N=35
• CE Separation in glass microchip• run buffer: TAPS-TRIS 100mM pH 8.5.• Sample : 23 mer oligonucleotide labelled with CY 5
• Detection limitDetection limit (@ S/N=3) : (@ S/N=3) : 1pM1pM
corresponds to < 30 molecules in the injection volume of 50pL
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Recent AchievementRecent Achievement
• Photon-Counting Quadrant Detectors and
Electronics for Adaptive Optics Systems of
Advanced Telescopescollaboration with
D.Bonaccini, ESO European Southern Observatory, Garching, D
and R. Biasi, Microgate, Bolzano, I
Reference:development of the STRAP (System for Tip-tilt Removal with Avalanche Photodiodes) for the VLT Observatory, Cerro Paranal, Chile
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
• 4 SPAD PerkinElmer SLIK®
• 4 hybrid AQC
• 4 E2PROM
Collaboration: Politecnico di Milano - ESO - Microgate (I) - CNR
STRAP Adaptive-Optics System of the VLT Observatory (Chile) of the European Southern Observatory ESO
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Quad- SPAD detection head
• 4 SPAD PerkinElmer SLIK®
• 4 hybrid AQC
• 4 E2PROM
Collaboration: Politecnico di Milano - ESO - Microgate (I) - CNR
STRAP Adaptive-Optics System of the VLT Observatory (Chile) of the European Southern Observatory ESO
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Recent AchievementRecent Achievement
• Non-invasive testing of ULSI Circuits by
Ultrasensitive Picosecond Time-Resolved
Measurements of MOSFET Luminescence collaboration with
IBM T.J. Watson Research Center, Yorktown Heights, NY
Reference:Stellari F., Zappa F., Cova S., Porta C., Tsang J.C., "High-Speed CMOS Circuit Testing by 50ps Time-Resolved Luminescence Measurements"IEEE Trans. Electron Devices, 48, 2830-2835 (2001)
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
MOSFET hot-carriers luminescence
hot-carriers
photon emission
impact ionization
n+p+
p
drainsourcebulk gate h
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Measurement technique
mirror
objectives
conventionalviewer
50x
5x
SPAD detector
device under test
start
stop
TACMCA
AQC
TCPC
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
-0.1 0.0 0.1 0.2 0.3 0.40
20
40
60
80
100
120
FWHM = 50ps
Cou
nts
(a.u
.)
Time [ns]
Single-inverter transition
FWHM=250ps
[ J.C. Tsang et al., APL, feb. 1997 ]
SPAD PMT
S. Cova et al., 2004
POLIMI - Politecnico di Milano, DEI
Optoelectronics & Microsystems Lab
Many inverters transitions