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Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

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3D Vertical NAND (V-NAND) flash memory presentation at Flash Memory Summit 2013 by Samsung's Jim Elliott (Vice President, Memory Marketing) and E.S. Jung (EVP/GM, Semiconductor R&D Center)
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Ushering in the 3D Memory Era with V- NAND Aug. 2013 Jim Elliott (Vice President, Memory Marketing) E.S. Jung (EVP/GM, Semiconductor R&D Center) Flash Memory Summit 2013 Santa Clara, CA 1
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Page 1: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Ushering in the 3D Memory Era with

V- NAND

Aug. 2013

Jim Elliott (Vice President, Memory Marketing)

E.S. Jung (EVP/GM, Semiconductor R&D Center)

Flash Memory

Summit 2013

Santa Clara, CA

1

Page 2: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Legal Disclaimer

This presentation is intended to provide information concerning SSD and memory industry. We do our best to make sure that information presented is accurate and fully up-to-date. However, the presentation may be subject to technical inaccuracies, information that is not up-to-date or typographical errors. As a consequence, Samsung does not in any way guarantee the accuracy or completeness of information provided on this presentation.

The information in this presentation or accompanying oral statements may include forward-looking statements.

These forward-looking statements include all matters that are not historical facts, statements regarding the Samsung Electronics' intentions, beliefs or current expectations concerning, among other things, market prospects, growth, strategies, and the industry in which Samsung operates. By their nature, forward-looking statements involve risks and uncertainties, because they relate to events and depend on circumstances that may or may not occur in the future. Samsung cautions you that forward looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or industry in which Samsung operates may differ materially from those made or suggested by the forward-looking statements contained in this presentation or in the accompanying oral statements. In addition, even if the information contained herein or the oral statements are shown to be accurate, those developments may not be indicative developments in future periods.

Page 3: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Contents

End User Paradigm Shift

NAND Flash Ubiquity

NAND Flash Scaling Limitation

World’s 1st 3D NAND Flash Technology: V-NAND

Era of V-NAND Based Products

Page 5: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

And Continues to Change the World

Personal Devices Rich Multi-Media

Apps Apps Apps!

Server & Cloud High Performance, Efficiency & Robustness TCO!

Laptop Experience Instant ON, Battery Life &

Sleek Design

Page 6: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Change in User Environment: PC Mobile + Cloud

Information growth drivers over time

2012: Mobile connected devices exceeded the world's population

Internet of everything!

Page 7: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Impact on Datacenter Infrastructure

* 1000 PB: 1EB (1018)

More applications for data Data traffic: 78% CAGR

Source: Cisco Visual Networking Index

5 EB: Total data created between the dawn of civilization and 2003

More video is uploaded to YouTube

in one month than the 3 major US

networks created in 60 years

Billions of

Devices!

What about Exabytes?

Page 8: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

NAND Flash Ubiquity

NAND is now an integral part of virtually every consumer device

NAND Flash

By 2020 >50B things will be connected… …And they will all need flash

Page 9: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

NAND Demand Growth

NAND demand is expected to reach 36B(1GB Eq.) in 2013

Mobile phones, SSDs and Tablets remain significant drivers for NAND demand

Source: Samsung & IHS, 2Q 2013

NAND Bit Shipment Trend

4.0 5.5 1.8

9.0

36

25

16

88

126

58

’07 ’08 ’09 ’10 ’11 ’12 ’13 ’14 ’15 ’16

CAGR: 60.3%

In 2015, there will be enough Flash to give every single person in the US a 256GB SSD

Page 10: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Has Moore’s Law Come to an End for NAND?

Maintaining planar evolution so far… But, Scaling is getting difficult

• Sub-1ynm hitting the limit of cell reliability Enterprise ?

• Tremendous investment cost required to continue Consumer ?

120nm 1Gb

70nm 4Gb

90nm 2Gb

60nm 8Gb

19nm 128Gb

40nm 32Gb

50nm 16Gb

Cost of Patterning

Future die shrinks: Prohibitively expensive, reliability concerns, diminishing wafer productivity

How to power the Internet of Everything with NAND?

Page 11: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Disruptive technology is required to continue to satisfy capacity, cost and reliability requirements

Page 12: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

ES Jung, Ph.D

EVP & GM,

Semiconductor R&D Center

Page 13: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Human Desire for NAND

High Speed

High Density

Low Power

High Reliability

Page 14: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Cell to Cell Interference

2 Questions

Patterning

20nm

e- e-

10nm

e- e-

e- e-

Cell Cell

D/R

Over 30nm

Over 30nm Over 30nm

Q1. Why so difficult ?

Q2. 3D V-NAND Can Solve ?

Page 15: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Cell to Cell Interference

2 Questions

Patterning

e-

e-

e-

e-

Q1. Why so difficult ?

Q2. 3D V-NAND Can Solve ?

Over 30nm

Page 16: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

24

Co

ntr

ol

Ga

te

Insu

lato

r S

i-C

ha

nn

el

Co

ntr

ol

Ga

te

Co

ntr

ol

Ga

te

Insu

lato

r S

i-C

ha

nn

el

Substrate-Si

S D

Conductor

Control Gate

3 Disruptive Innovations

3D V-NAND

Floating Gate

2D CTF

3D CTF

Substrate-Si S D

Innovation

Innovation

Innovation

Material (2003)

Structure (2008)

Integration (2008)

Control Gate

Insulator

Si-Channel

Control Gate

Insulator

1

2

Page 17: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Co

ntr

ol

Ga

te

Insu

lato

r

Si-

Ch

an

ne

l

Innovation Result: V-NAND Cell

Word Line

W/L Interference Almost Free

Patterning Issue Free

Cell to Cell Interference

Patterning

Bit Line

B/L Interference Free

Page 18: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

V-NAND Era for the Future

2D Planar

‘05 ‘13 ‘07 ‘09 ‘11 Year

Design Rule (nm)

‘03

3D V-NAND / No Patterning Limitation

128Gb

16Gb

8 stack

128Gb

24 stack

1Tb

‘17 ‘15

Page 19: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Paradigm Shift from Drive to Fly

Material

Structure

Integration

Innovative Technology

Page 20: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

3D Memory Era Begins Today !

Page 21: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

World’s 1st V-NAND Based SSD

• SATA 6Gbps • 2.5” Form Factor • 480/960GB • Power-Loss Data Protection

Page 22: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Benefits of V-NAND Based SSD

Planar NAND SSD (8Ch, 8dies/Ch)

22% Faster

20% Faster

27% Lower

45% Lower

V-NAND SSD (8CH, 4dies/Ch)

Norm

alize

d (

a.u

)

Less Real Estate

Higher Performance

Performance

Low Power Consumption

Power

* Note: Performance and power result is based on measured maximum improvement.

Page 23: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Benefits of V-NAND Based SSD

Page 24: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Benefits of V-NAND Based SSD

Planar

2D Box

Page 25: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Benefits of V-NAND Based SSD

V-NAND

Greater V-NAND cell reliability expanded NAND universe

• CE: lower cost continuum. Enterprise: endurance enabling rapid adoption rate

• Lightning fast internet of the future!

Planar

Endurance

Performance

Consumer

Enterprise

Page 26: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

SSD Market Forecast

Planar NAND

$/Gb

Endurance Performance

SSD market growth has always been constrained

• Doubts about keeping up $/Gb improvements

• Concerns about degrading NAND Flash parameters (Endurance, Performance, Retention..)

[Samsung Projection based on 2013 2Q iSuppli market forecast ]

Page 27: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

SSD Market Forecast

Planar NAND

$/Gb

Endurance Performance

SSD market growth has always been constrained

• Doubts about keeping up $/Gb improvements

• Concerns about degrading NAND Flash parameters (Endurance, Performance, Retention..)

[Samsung Projection based on 2013 2Q iSuppli market forecast ]

K Units K Units Enterprise Client

Page 28: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

SSD Market Forecast with V-NAND Impact

Enterprise Client

“SSD for Everyone!”

K Units

[Samsung Projection based on 2013 2Q iSuppli market forecast ]

2X 3X

V-NAND

K Units

Page 29: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

The V-NAND Vision: 20/20 to 2020

V- N A N D: F U T U R E O F F L A S H

M E M O R Y

I S T O D A Y

Drive New Applications

Lead Green IT Market

Create Next-Generation Business

Samsung’s innovation doesn’t stop here… We will continue to push the best technology solutions

Page 30: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013
Page 31: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

It’s time for the IT Industry to evolve.

Page 32: Samsung presents Ushering in the 3D Memory Era with V- NAND at Flash Memory Summit 2013

Thank You


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