Scientific publications

Massimo Manghisoni is author or coauthor of 190 scientific publications. The full publica-tion list includes:

108 papers on international scientific journals;81 conference proceedings;1 book chapter.

http://orcid.org/0000-0001-5559-0894

Bibliometric indicators, as extracted from the ISI Web of Science:

Entries: 165Citations: 762h-index: 15

Bibliometric indicators, as extracted from Scopus:

Entries: 173Citations: 963h-index: 18

Bibliometric indicators, as extracted from Google Scholar:

Entries: 201Citations: 1736h-index: 20

Complete List of Publications

International refereed journal papers

J.1 M. Manghisoni, V. Re, V. Speziali, F. Svelto, “Experimental studies of the noise pro- 2001perties of a deep submicron CMOS process”, Nucl. Instrum. Meth., vol. A461, pp.537-539, 2001.ISSN: 0168-9002, doi: 10.1016/S0168-9002(00)01293-6

J.2 P.F. Manfredi, M. Manghisoni, L. Ratti, V. Re, “A bilinear analog compressor to adaptthe signal dynamic range in the Auger fluorescence detector”, Nucl. Instrum. Meth.,vol. A461, pp. 526-529, 2001.ISSN: 0168-9002, doi: 10.1016/S0168-9002(00)01291-2

J.3 P.F. Manfredi, M. Manghisoni, “Front-End Electronics for Pixel Sensors”, Nucl. In-strum. Meth., vol. A465, pp. 140-147, 2001.ISSN: 0168-9002, doi: 10.1016/S0168-9002(01)00374-6

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J.4 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Selection criteria for P- and N-channelJFET’s as input element in low-noise radiation-hard charge amplifiers”, IEEE Trans.Nucl. Sci., vol. 48, no. 4, pp. 1598-1604, 2001.ISSN: 0018-9499, doi: 10.1109/23.958402

J.5 V. Re, I. Bietti, R. Castello, M. Manghisoni, V. Speziali, F. Svelto, “Experimentalstudy and modeling of the white noise sources in submicron P and N-MOSFETs”,IEEE Trans. Nucl. Sci., vol. 48, no. 4, pp. 1577-1586, 2001.ISSN: 0018-9499, doi: 10.1109/23.958399

J.6 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Low-noise design criteria for detector 2002readout systems in deep submicron CMOS technology”, Nucl. Instrum. Meth., vol.A478, pp. 326-366, 2002.ISSN: 0168-9002, doi: 10.1016/S0168-9002(01)01831-9

J.7 M. Manghisoni, et al., “Design and characterization of integrated front-end transistorsin a micro-strip detector technology”, Nucl. Instrum. Meth., vol. A485, pp. 193-198,2002.ISSN: 0168-9002, doi: 10.1016/S0168-9002(02)00554-5

J.8 M. Manghisoni, et al., “Feasibility studies of microelectrode silicon detectors with in-tegrated electronics”, Nucl. Instrum. Meth., vol. A478, pp. 372-376, 2002.ISSN: 0168-9002, doi: 10.1016/S0168-9002(01)01777-6

J.9 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Instrumentation for noise measurementson CMOS transistors for fast detector preamplifiers”, IEEE Trans. Nucl. Sci., vol.49, no. 4, pp. 1281-1286, 2002.ISSN: 0018-9499, doi: 10.1109/TNS.2002.1039652

J.10 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Submicron CMOS technologies for low-noise analog front-end circuits”, IEEE Trans. Nucl. Sci., vol. 49, no. 4, pp. 1783-1790,2002.ISSN: 0018-9499, doi: 10.1109/TNS.2002.801540

J.11 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Radiation hardness perspectives for thedesign of analog detector readout circuits in the 0.18 µm CMOS generation”, IEEETrans. Nucl. Sci., vol. 49, no. 6, pp. 2902-2909, 2002.ISSN: 0018-9499, doi: 10.1109/TNS.2002.805413

J.12 M. Manghisoni, L. Ratti, G. Traversi, “Radiation effects on the noise parameters of a 20030.18 µm CMOS technology for detector front-end applications”, Nucl. Phys. B (Proc.Suppl.), vol. 125, pp. 400-405, 2003.ISSN: 0920-5632, doi: 10.1016/S0920-5632(03)91024-3

J.13 P.F. Manfredi, M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Resolution limits achieva-ble with CMOS front-end in X and gamma-ray analysis with semiconductor detectors”,Nucl. Instrum. Meth., vol. A512, pp. 167-178, 2003.ISSN: 0168-9002, doi: 10.1016/S0168-9002(03)01891-6

J.14 G.F. Dalla Betta, M. Manghisoni, L. Ratti, V. Re, V. Speziali, “JFET preamplifierswith different reset techniques on detector-grade high-resistivity silicon”, Nucl. In-strum. Meth., vol. A512, pp. 199-206, 2003.ISSN: 0168-9002, doi: 10.1016/S0168-9002(03)01894-1

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J.15 G.F. Dalla Betta , M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Effectsof γ-rays on JFET devices and circuits fabricated in a detector-compatible process”,IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2474-2480, 2003.ISSN: 0018-9499, doi: 10.1109/TNS.2003.820631

J.16 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, A. Candelori, “Comparisonof ionizing radiation effects in 0.18 and 0.25 µm CMOS technologies for analog appli-cations”, IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1827-1833, 2003.ISSN: 0018-9499, doi: 10.1109/TNS.2003.820767

J.17 P.S. Datte, J.F. Beche, M. Haguenauer, P.F. Manfredi, M. Manghisoni, J.E. Millaud,M. Placidi, L. Ratti, V.J. Riot, H. Schmickler, V. Speziali, G. Traversi, W.C. Turner,“Initial test results of an ionization chamber shower detector for a LHC luminositymonitor”, IEEE Trans. Nucl. Sci., vol. 50, no. 2, pp. 258-262, 2003.ISSN: 0018-9499, doi: 10.1109/TNS.2003.809473

J.18 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, G. F. Dalla Betta, M.Boscardin, G. Batignani, M. Giorgi, L. Bosisio, “JFET front-end circuits integrated ina detector-grade silicon substrate”, IEEE Trans. Nucl. Sci., vol. 50, no. 4, pp. 942-947, 2003.ISSN: 0018-9499, doi: 10.1109/TNS.2003.815177

J.19 M. Manghisoni et al., “Recent results from the development of silicon detectors with 2004integrated electronics”, Nucl. Instrum. Meth., vol. A518, pp. 354-356, 2004.ISSN: 0168-9002, doi: 10.1016/j.nima.2003.11.021

J.20 M. Manghisoni et al., “A study for the detection of ionizing particles with phototran-sistors on thick high-resistivity silicon substrates”, Nucl. Instrum. Meth., vol. A530,pp. 98-104, 2004.ISSN: 0168-9002, doi: 10.1016/j.nima.2004.05.055

J.21 P. Danes, P.S. Datte, P.F. Manfredi, J.E. Millaud, M. Placidi, A. Ratti, L. Ratti,V. Speziali, G. Traversi, W.C. Turner, “The readout of the LHC beam luminositymonitor: accurate shower energy measurements at 40 MHz repetition rate”, Nucl.Instrum. Meth., vol. A518, pp. 501-506, 2004.ISSN: 0168-9002, doi: 10.1016/j.nima.2003.11.069

J.22 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, G. Fallica, “Gamma-rayresponse of SOI bipolar junction transistor for fast, radiation tolerant front-end elec-tronics”, Nucl. Instrum. Meth., vol. A518, pp. 477-481, 2004.ISSN: 0168-9002, doi: 10.1016/j.nima.2003.11.062

J.23 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, G. Fallica, S. Leonardi,“Noise analysis of NPN SOI bipolar transistors for the design of charge measuringsystems”, IEEE Trans. Nucl. Sci., vol. 51, no. 3, pp. 980-986, 2004.ISSN: 0018-9499, doi: 10.1109/TNS.2004.829580

J.24 G.F. Dalla Betta, M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, A. Can-delori, “Proton-induced damage in JFET transistor and charge preamplifier on high-resistivity silicon”, IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2880-2886, 2004.ISSN: 0018-9499, doi: 10.1109/TNS.2004.835063

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J.25 V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, “Survey of noise performan- 2005ces and scaling effects in deep submicrometer CMOS devices from different foundries”,IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2733-2740, Dec. 2005.ISSN: 0018-9499, doi: 10.1109/TNS.2005.862771

J.26 R.J. Yarema, J. Hoff, A. Mekkaoui, M. Manghisoni, V. Re, P.F. Manfredi, L. Ratti,V. Speziali, “Fermilab Silicon Strip Readout chip for BTeV”, IEEE Trans. Nucl. Sci.,vol. 52, no. 3, pp. 799-804, 2005.ISSN: 0018-9499, doi: 10.1109/TNS.2005.850935

J.27 L. Ratti, M. Manghisoni, E. Oberti, V. Re, V. Speziali, G. Traversi, G. Fallica, R.Modica, “Response of SOI bipolar transistors exposed to gamma-rays under differentdose rate and bias conditions”, IEEE Trans. Nucl. Sci. vol. 52, no. 4, pp. 1040-1047,2005.ISSN: 0018-9499, doi: 10.1109/TNS.2005.852690

J.28 V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, “Design criteria for low noise 2006front-end electronics in the 0.13 µm CMOS generation”, Nucl. Instrum. Meth., vol.A568, pp. 343-349, 2006.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.06.003

J.29 L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, S. Bettarini, G. Calderini,R. Cenci, M. Giorgi, F. Forti, F. Morsani, G. Rizzo, “Monolithic pixel detectors in a0.13 µm CMOS technology with sensor level continuous time charge amplification andshaping”, Nucl. Instrum. Meth., vol. A568, pp. 159-166, 2006.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.05.225

J.30 G. Rizzo, S. Bettarini, G. Calderini, R. Cenci, F. Forti, M.A. Giorgi, F. Morsani, L.Ratti, V. Speziali, M. Manghisoni, V. Re, G. Traversi, L. Bosisio “A novel monolithicactive pixel detector in 0.13 µm triple well CMOS technology with pixel level analogprocessing”, Nucl. Instrum. Meth., vol. A565, pp. 195-201, 2006.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.05.082

J.31 M. Manghisoni et al., “A new approach to the design of monolithic active pixel de-tectors in 0.13 µm triple well CMOS technology”, Nucl. Instrum. Meth., vol. A569,pp. 61-64, 2006.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.09.013

J.32 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Noise Performance of0.13 µm CMOS Technologies for Detector Front-End Applications”, IEEE Trans. Nu-cl. Sci., vol. 53, no. 4, pp. 2456-2462, Aug. 2006.ISSN: 0018-9499, doi: 10.1109/TNS.2006.876472

J.33 V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, “Total ionizing dose effectson the noise performances of a 0.13 µm CMOS technology”, IEEE Trans. Nucl. Sci.,vol. 53, no. 3, pp. 1599-1606, Jun. 2006.ISSN: 0018-9499, doi: 10.1109/TNS.2006.871802

J.34 V. Re, M. Manghisoni, L. Ratti, J. Hoff, A. Mekkaoui, R. Yarema, “FSSR2, a Self-Triggered Low Noise Readout Chip for Silicon Strip Detectors”, IEEE Trans. Nucl.Sci., vol. 53, no. 4, pp. 2470-2476, Aug. 2006.ISSN: 0018-9499, doi: 10.1109/TNS.2006.877858

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J.35 M.E. Dinardo, G. Cardoso, J. Hoff, M. Manghisoni, A. Mekkaoui, L. Moroni, L. Ratti, 2007V. Re, F. Valsecchi, R. Yarema, “First prototype of a silicon microstrip detectorwith the data-driven readout chip FSSR2 for a tracking-based trigger system”, Nucl.Instrum. Meth., vol. A572, pp. 388-391, 2007.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.10.205

J.36 G. Traversi, M. Manghisoni, L. Ratti, V. Re, V. Speziali, “CMOS MAPS with pixellevel sparsification and time stamping capabilities for applications at the ILC”, Nucl.Instrum. Meth., vol. A581, pp. 291-294, 2007.ISSN: 0168-9002, doi: 10.1016/j.nima.2007.07.125

J.37 G. Traversi, M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Pixel-level continuous-timeanalog signal processing for 130 nm CMOS MAPS”, Nucl. Instrum. Meth., vol. A572,pp. 396-398, 2007.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.10.327

J.38 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “130 and 90 nm CMOStechnologies for detector front-end applications”, Nucl. Instrum. Meth., vol. A572,pp. 368-370, 2007.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.10.222

J.39 M. Manghisoni, et al., “Development of deep N-well monolithic active pixel sensors ina 0.13 µm CMOS technology”, Nucl. Instrum. Meth., vol. A572, pp. 277-280, 2007.ISSN: 0168-9002, doi: 10.1016/j.nima.2006.10.302

J.40 L. Gonella, F. Faccio, M. Silvestri, S. Gerardin, D. Pantano, V. Re, M. Manghisoni,L. Ratti, A. Ranieri, “Total Ionizing Dose effects in 130-nm commercial CMOS tech-nologies for HEP experiments”, Nucl. Instrum. Meth., vol. A582, pp. 750-754, 2007.ISSN: 0168-9002, doi: 10.1016/j.nima.2007.07.068

J.41 M. Manghisoni et al., “Recent developments in 130nm CMOS monolithic active pi-xel detectors”, Nuclear Physics B - Proceedings Supplements, vol. 172, pp. 20-24,Oct. 2007.ISSN: 09205632, doi: 10.1016/j.nuclphysbps.2007.07.004

J.42 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Resolution Limits in 130nm and 90 nm CMOS Technologies for Analog Front-End Applications”, IEEE Trans.Nucl. Sci.. vol. 54, no. 3, pp. 531-537, Jun. 2007.ISSN: 0018-9499, doi: 10.1109/TNS.2007.896213

J.43 V. Re, M. Manghisoni, L. Ratti, G. Traversi, V. Speziali, “Impact of Lateral IsolationOxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100 nmRegime”, IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2218-2226, Dec. 2007.ISSN: 0018-9499, doi: 10.1109/TNS.2007.908375

J.44 V. Re, L. Gaioni, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, “CMOS techno- 2008logies in the 100 nm range for rad-hard front-end electronics in future collider experi-ments”, Nucl. Instrum. Meth., vol. A596, pp. 107-112, 2008.ISSN: 0168-9002, doi: 10.1016/j.nima.2008.07.058

J.45 V. Re, L. Gaioni, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, R. Yarema, “NoiseBehavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics”,

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IEEE Trans. Nucl. Sci., vol. 55, no. 4, pp. 2408-2413, Aug. 2008.ISSN: 0018-9499, doi: 10.1109/TNS.2008.2001082

J.46 M. Manghisoni, “Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impacton the Performance of Analog Front-End Circuits”, IEEE Trans. Nucl. Sci., vol. 55,no. 4, pp. 2399-2407, Aug. 2008.ISSN: 0018-9499, doi: 10.1109/TNS.2008.2001064

J.47 L. Ratti, L. Gaioni, M. Manghisoni, G. Traversi, D. Pantano, “Investigating Degra-dation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies UnderExtreme Radiation Conditions”, IEEE Trans. Nucl. Sci., vol. 55, no. 4, pp. 1992-2000, Aug. 2008.ISSN: 0018-9499, doi: 10.1109/TNS.2008.921935

J.48 V. Re, L. Gaioni, M. Manghisoni, L. Ratti, G. Traversi, “Comprehensive Study ofTotal Ionizing Dose Damage Mechanisms and Their Effects on Noise Sources in a90 nm CMOS Technology”, IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 3272-3279,Dec. 2008.ISSN: 0018-9499, doi: 10.1109/TNS.2008.2005410

J.49 V. Re, A. Bulgheroni, M. Caccia, M. Jastrzab, M. manghisoni, E. Pozzati, L. Ratti, G.Traversi, “Monolithic Active Pixel Sensors for the Vertex Detector at the InternationalLinear Collider”, Nuovo Cimento B, Vol. 123, Issue 06-07, pp. 994-996.ISSN: 1826-9877, doi: 10.1393/ncb/i2008-10613-8

J.50 M. Manghisoni et al., “A 4096-pixel MAPS device with on-chip data sparsification”, 2009Nucl. Instrum. Meth., vol. A604, pp. 408-411, 2009.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.01.175

J.51 G. Traversi, A. Bulgheroni, M. Caccia, M. Jastrzab, M. Manghisoni, E. Pozzati, L.Ratti, V. Re, “First generation of deep n-well CMOS MAPS with in-pixel sparsificationfor the ILC vertex detector”, Nucl. Instrum. Meth., vol. A604, pp. 390-392, 2009.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.01.195

J.52 L. Ratti, C. Andreoli, L. Gaioni, M. Manghisoni, E. Pozzati, V. Re, G. Traversi, “TIDEffects in Deep N-Well CMOS Monolithic Active Pixel Sensors”, IEEE Trans. Nucl.Sci., vol. 56, no. 4, pp. 2124 - 2131, 2009.ISSN: 0018-9499, doi: 10.1109/TNS.2009.2012427

J.53 L. Ratti, M. Manghisoni, V. Re, G. Traversi, “Design Optimization of Charge Pre-amplifiers With CMOS Processes in the 100 nm Gate Length Regime”, IEEE Trans.Nucl. Sci., vol. 56, no. 1, pp. 235-242, Feb. 2009.ISSN: 0018-9499, doi: 10.1109/TNS.2008.2009311

J.54 G. Traversi, A. Bulgheroni, M. Caccia, M. Jastrzab, M. Manghisoni, E. Pozzati, L.Ratti, V. Re, “Design and Performance of a DNW CMOS Active Pixel Sensor for theILC Vertex Detector”, IEEE Trans. Nucl. Sci., vol. 56, no. 5, pp. 3002-3009, 2009.ISSN: 0018-9499, doi: 10.1109/TNS.2009.2025885

J.55 M. Manghisoni et al., “On-Chip Fast Data Sparsification for a Monolithic 4096-PixelDevice”, IEEE Trans. Nucl. Sci., vol. 56, no. 3, pp. 1159-1162, 2009.ISSN: 0018-9499, doi: 10.1109/TNS.2008.2005497

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J.56 L. Ratti, M. Manghisoni, V. Re, G. Traversi, “Design of Time Invariant Analog Front-End Circuits for Deep N-Well CMOS MAPS”, IEEE Trans. Nucl. Sci., vol. 56, no. 4,pp. 2360-2373, 2009.ISSN: 0018-9499, doi: 10.1109/TNS.2009.2024536

J.57 M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi, “Introducing 65 nm CMOS 2010technology in low-noise read-out of semiconductor detectors”, Nucl. Instrum. Meth.,vol. 624, pp. 373-378, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.02.266

J.58 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “A 3D deep n-well CMOSMAPS for the ILC vertex detector”, Nucl. Instrum. Meth., vol. 617, pp. 324-326, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.09.041

J.59 V. Re, L. Gaioni, M. Manghisoni, L. Ratti, G. Traversi, “Forecasting noise and ra-diation hardness of CMOS front-end electronics beyond the 100 nm frontier”, Nucl.Instrum. Meth., vol. 617, pp. 358-361, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.09.098

J.60 M. Manghisoni et al., “SLIM5 beam test results for thin striplet detector and fastreadout beam telescope”, Nucl. Instrum. Meth., vol. 617, pp. 601-604, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.09.039

J.61 M. Manghisoni et al., “The SLIM5 low mass silicon tracker demonstrator”, Nucl.Instrum. Meth., vol. 623, pp. 942-953, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.08.026

J.62 M. Manghisoni et al., “Beam-test results of 4k pixel CMOS MAPS and high resistivitystriplet detectors equipped with digital sparsified readout in the Slim5 low mass silicondemonstrator”, Nucl. Instrum. Meth., vol. 617, pp. 596-600, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.10.035

J.63 M. Manghisoni et al., “The high rate data acquisition system for the SLIM5 beamtest”, Nucl. Instrum. Meth., vol. 617, pp. 321-323, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.10.045

J.64 L. Ratti, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, “Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin chargedparticle trackers”, Nucl. Instrum. Meth., vol. 624 , pp. 379-386, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.05.039

J.65 M. Manghisoni et al., “The superB silicon vertex tracker”, Nucl. Instrum. Meth.,vol. 617, pp. 585-587, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2009.10.051

J.66 M. Manghisoni et al., “Deep n-well MAPS in a 130 nm CMOS technology: Beam testresults”, Nucl. Instrum. Meth., vol. 623, pp. 195-197, 2010.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.02.193

J.67 L. Ratti, M. Manghisoni, V. Re, G. Traversi, S. Zucca, S. Bettarini, F. Morsani, G.Rizzo, “Front-End Performance and Charge Collection Properties of Heavily IrradiatedDNW MAPS”, IEEE Trans. Nucl. Sci., vol. 57, no. 4, pp. 1781-1789, 2010.ISSN: 0018-9499, doi: 10.1109/TNS.2009.2039003

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J.68 V. Re, L. Gaioni, M. Manghisoni, L. Ratti, G. Traversi, “Mechanisms of Noise De-gradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation ”,IEEE Trans. Nucl. Sci., vol. 57, no. 6, pp. 3071-3077, 2010.ISSN: 0018-9499, doi: 10.1109/TNS.2010.2068562

J.69 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “Front-end electronics in 2011a 65 nm CMOS process for high density readout of pixel sensors”, Nucl. Instrum.Meth., vol. 650, pp. 163-168, 2011.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.11.091

J.70 G. Traversi, L. Gaioni, M. Manghisoni, L. Ratti, V. Re, “2D and 3D CMOS MAPSwith high performance pixel-level signal processing”, Nucl. Instrum. Meth., vol. 628,pp. 212-215, 2011.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.06.320

J.71 M. Manghisoni et al., “The superB silicon vertex tracker”, Nucl. Instrum. Meth.,vol. 636, pp. S168-S172, 2011.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.04.104

J.72 M. Manghisoni et al., “Thin pixel development for the SuperB silicon vertex tracker”,Nucl. Instrum. Meth., vol. 670, pp. 169-173, 2011.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.12.111

J.73 M. Manghisoni et al., “Beam test results of different configurations of deep N-wellMAPS matrices featuring in pixel full signal processing”, Nucl. Instrum. Meth.,vol. 628, pp. 234-237, 2011.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.06.325

J.74 L. Ratti, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, “Vertically integrated mo-nolithic pixel sensors for charged particle tracking and biomedical imaging”, Nucl.Instrum. Meth., vol. 652, pp. 630-633, 2011.ISSN: 0168-9002, doi: 10.1016/j.nima.2010.09.084

J.75 L. Ratti, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, “TID-Induced Degradationin Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs”, IEEETrans. Nucl. Sci., vol. 58, no. 3, pp. 776-784, 2011.ISSN: 0018-9499, doi: 10.1109/TNS.2010.2098046

J.76 G. Traversi, L. Gaioni, M. Manghisoni, L. Ratti, V. Re, “A 3D Vertically IntegratedDeep N-Well CMOS MAPS for the SuperB Layer0”, Journal of Instrumentation, vol. 6,C01010, Jan. 2011.ISSN: 1748-0221, doi:10.1088/1748-0221/6/01/C01010

J.77 G. Traversi, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, V. Re, S. Zucca, “Recent 2012progress in the development of 3D deep n-well CMOS MAPS”, Journal of Instrumen-tation, vol. 7, C02006, Feb. 2012.ISSN: 1748-0221, doi: 10.1088/1748-0221/7/02/C02007

J.78 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “A 65-nm CMOS PrototypeChip With Monolithic Pixel Sensors and Fast Front-End Electronics”, IEEE Trans.Nucl. Sci., vol. 59, no. 6(2), pp. 3304-3311, Dec. 2012.ISSN: 0018-9499, doi: 10.1109/TNS.2012.2216547

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J.79 M. Manghisoni, et al., “Development of the DEPFET Sensor With Signal Compres-sion: A Large Format X-Ray Imager With Mega-Frame Readout Capability for theEuropean XFEL”, IEEE Trans. Nucl. Sci., vol. 59, no. 6(2), pp. 3339-3351, Dec.2012.ISSN: 0018-9499, doi: 10.1109/TNS.2012.2217755

J.80 V. Re, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, G. Traversi, “Radiation 2013Tolerance of Devices and Circuits in a 3D Technology Based on the Vertical Integrationof Two 130-nm CMOS Layers”, IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp. 4526-4532,2013.ISSN: 0018-9499, doi: 10.1109/TNS.2013.2286676

J.81 M. Manghisoni, D. Comotti, E. Quartieri, P. Fischer, M. Porro, “Pixel-Level Chargeand Current Injection Circuit for High Accuracy Calibration of the DSSC Chip at theEuropean XFEL”, IEEE Trans. Nucl. Sci., vol. 60, no. 5, pp. 3852-3861, 2013.ISSN: 0018-9499, doi: 10.1109/TNS.2013.2277331

J.82 G. Traversi, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, V. Re, “The first fullyfunctional 3D CMOS chip with Deep N-well active pixel sensors for the ILC vertexdetector”, Nucl. Instrum. Meth., vol. 723, pp. 543-546, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2013.05.016

J.83 E. Quartieri, D. Comotti, M. Manghisoni, “High accuracy injection circuit for thecalibration of a large pixel sensor matrix”, Nucl. Instrum. Meth., vol. 718, pp. 234-236, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2013.05.016

J.84 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “The design of fast analogchannels for the readout of strip detectors in the inner layers of the SuperB SVT”,Nucl. Instrum. Meth., vol. 718, pp. 205-207, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2012.11.125

J.85 M. Manghisoni et al., “The front-end chip of the SuperB SVT detector”, Nucl. In-strum. Meth., vol. 718, pp. 180-183, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2012.11.036

J.86 M. Manghisoni et al., “Recent developments on CMOS MAPS for the SuperB SiliconVertex Tracker”, Nucl. Instrum. Meth., vol. 718, pp. 283-287, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2012.10.084

J.87 M. Manghisoni et al., “Beam test results for the SuperB-SVT thin striplet detector”,Nucl. Instrum. Meth., vol. 718, pp. 314-317, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2012.10.086

J.88 M. Manghisoni et al., “Latest results of the R&D on CMOS MAPS for the Layer0 ofthe SuperB SVT”, Nucl. Instrum. Meth., vol. 732, pp. 484-487, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2013.05.170

J.89 M. Manghisoni et al., “Advances in the development of pixel detector for the SuperBSilicon Vertex Tracker”, Nucl. Instrum. Meth., vol. 731, pp. 25-30, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2013.06.070

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J.90 L. Ratti, L. Gaioni, A. Manazza, M. Manghisoni, V. Re, G. Traversi, “First resultsfrom the characterization of a three-dimensional deep N-well MAPS prototype forvertexing applications”, Nucl. Instrum. Meth., vol. 699, pp. 41-46, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2012.03.021

J.91 G. Traversi, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, V. Re, S. Zucca, S.Bettarini, G. Rizzo, F. Morsani, L. Bosisio, I. Rashevskaya, V. Cindro, “Review ofradiation damage studies on DNW CMOS MAPS”, Nucl. Instrum. Meth., vol. 730,pp. 155-158, 2013.ISSN: 0168-9002, doi: 10.1016/j.nima.2013.04.079

J.92 M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi, “Assessment of a Low-Power 201465 nm CMOS Technology for Analog Front-End Design”, IEEE Trans. Nucl. Sci.,vol. 61, no. 1, pp. 553-560, 2014.ISSN: 0018-9499, doi: 10.1109/TNS.2013.2295981

J.93 A. Manazza, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, S. Bettarini, F. Forti, F.Morsani, G. Rizo, “CMOS MAPS in a Homogeneous 3D Process for Charged ParticleTracking”, IEEE Trans. Nucl. Sci., vol. 61, no. 1, pp. 700-707, 2014.ISSN: 0018-9499, doi: 10.1109/TNS.2014.2299341

J.94 S. Zucca, M. Manghisoni, L. Ratti, V. Re, G. Traversi, S. Bettarini, F. Forti, F.Morsani, G. Rizzo, “Effects of substrate thinning on the properties of quadruple wellCMOS MAPS”, IEEE Trans. Nucl. Sci., vol. 61, pp. 1039-1046, 2014.ISSN: 0018-9499, doi: 10.1109/TNS.2014.2307960

J.95 L. Ratti L. Gaioni, A. Manazza, M. Manghisoni, V. Re, G. Traversi, “Advantages of 2015a vertical integration process in the design of DNW MAPS”, Nucl. Instrum. Meth.,vol. 784, pp. 255-259, 2015.ISSN: 0168-9002, doi: 10.1016/j.nima.2014.11.032

J.96 G. Traversi, F. De Canio, L. Gaioni, M. Manghisoni, L. Ratti, V. Re, “Design ofbandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications”,Journal of Instrumentation, vol. 10, pp. 1-9, 2015.ISSN: 1748-0221, doi: 10.1088/1748-0221/10/02/C02004

J.97 G. Traversi, S. Bonacini, F. De Canio, L. Gaioni, K. Kloukinas, M. Manghisoni, L.Ratti, V. Re, “Design of low-power, low-voltage, differential I/O links for High EnergyPhysics applications”, Journal of Instrumentation, vol. 10, pp. 1-8, 2015.ISSN: 1748-0221, doi: 10.1088/1748-0221/10/01/C01055

J.98 M. Manghisoni, D. Comotti, L. Gaioni, L. Ratti, V. Re, “Dynamic compression of thesignal in a charge sensitive amplifier: from concept to design”, IEEE Trans. Nucl.Sci., vol. 62, pp. 2318-2326, 2015.ISSN: 0018-9499, doi: 10.1109/TNS.2015.2477461

J.99 L. Gaioni, F. De Canio, M. Manghisoni, L. Ratti, V. Re, G. Traversi, A. Marchioro, K.Kloukinas, “Low-power clock distribution circuits for the Macro Pixel ASIC”, Journalof Instrumentation, vol. 10, pp. 1-10, 2015.ISSN: 1748-0221, doi: 10.1088/1748-0221/10/01/C01051

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J.100 L. Ratti, D. Comotti, L. Fabris, M. Grassi, L. Lodola, P. Malcovati, M. Manghisoni,V. Re, G. Traversi, C. Vacchi, S. Bettarini, G. Casarosa, F. Forti, F. Morsani, A.Paladino, E. Paoloni, G. Rizzo, M.A. Benkechkache, G-F Dalla Betta, R. Mendicino,L. Pancheri, G. Verzellesi, H. Xu, “PixFEL: developing a fine pitch, fast 2D X-rayimager for the next generation X-FELs”, Nucl. Instrum. Meth., vol. 796.ISSN: 0168-9002, doi: 10.1016/j.nima.2015.03.022

J.101 G. Rizzo, D. Comotti, L. Fabris, M. Grassi, L. Lodola, P. Malcovati, M. Manghisoni,L. Ratti, V. Re, G. Traversi, C. Vacchi, G. Batignani, S. Bettarini, G. Casarosa, F.Forti, F. Morsani, A. Paladino, E. Paoloni, M.A. Benkechkache, G-F Dalla Betta, R.Mendicino, L. Pancheri, G. Verzellesi, H. Xu, “The PixFEL project: development ofadvanced X-ray pixel detectors for application at future FEL facilities”, Journal ofInstrumentation, vol. 10, 2015.ISSN: 1748-0221, doi: 10.1088/1748-0221/10/02/C02024

J.102 L. Ratti, D. Comotti, L. Fabris, M. Grassi, L. Lodola, P. Malcovati, M. Manghisoni, 2016V. Re, G. Traversi, C. Vacchi, G. Rizzo, G. Batignani, S. Bettarini, G. Casarosa, F.Forti, M. Giorgi, F. Morsani, A. Paladino, E. Paoloni, L. Pancheri, G.-F. Dalla Betta,R. Mendicino, G. Verzellesi, H. Xu, M.A. Benkechkache, “A 2D imager for X-ray FELswith a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/Dconversion”, Nucl. Instrum. Meth., Available online 18 May 2016.ISSN: 0168-9002, doi: 10.1016/j.nima.2016.05.055

J.103 G.-F. Dalla Betta, G. Batignani, M.A. Benkechkache, S. Bettarini, G. Casarosa,D. Comotti, L. Fabris, F. Forti, M. Grassi, S. Latreche, L. Lodola, P. Malcovati,M. Manghisoni, R. Mendicino, F. Morsani, A. Paladino, L. Pancheri, E. Paoloni, L.Ratti, V. Re, G. Rizzo, G. Traversi, C. Vacchi, G. Verzellesi, H. Xu, “Design andTCAD simulation of planar p-on-n active-edge pixel sensors for the next generationof FELs”, Nucl. Instrum. Meth., vol. 824, pp. 384-385, 2016.ISSN: 0168-9002, doi: 10.1016/j.nima.2015.08.027

J.104 L. Lodola, G. Batignani, M.A. Benkechkache, S. Bettarini, G. Casarosa, D. Comotti,G.F. Dalla Betta, L. Fabris, F. Forti, M. Grassi, S. Latreche, P. Malcovati, M. Man-ghisoni, R. Mendicino, F. Morsani, A. Paladino, L. Pancheri, E. Paoloni, L. Ratti, V.Re, G. Rizzo, “In-pixel conversion with a 10 bit SAR ADC for next generation X-rayFELs”, Nucl. Instrum. Meth., vol. 024, pp. 313-315, 2016.ISSN: 0168-9002, doi: 10.1016/j.nima.2015.10.042

J.105 G. Traversi, F. De Canio, L. Gaioni, M. Manghisoni, S. Mattiazzo, L. Ratti, V. Re,E. Riceputi, “Characterization of bandgap reference circuits designed for high energyphysics applications”, Nucl. Instrum. Meth., vol. 824, pp. 371-373, 2016.ISSN: 0168-9002, doi: 10.1016/j.nima.2015.09.103

J.106 G. Rizzo, G. Batignani, M.A. Benkechkache, S. Bettarini, G. Casarosa, D. Comotti,G.-F. Dalla Betta, L. Fabris, F. Forti, M. Grassi, L. Lodola, P. Malcovati, M. Manghi-soni, R. Mendicino, F. Morsani, A. Paladino, L. Pancheri, E. Paoloni, L. Ratti, V. Re,G. Traversi, C. Vacchi, G. Verzellesi, H. Xu, “ The PixFEL project: Progress towardsa fine pitch X-ray imaging camera for next generation FEL facilities”, Nucl. Instrum.Meth., vol. 824, pp. 131-134, 2016.ISSN: 0168-9002, doi: 10.1016/j.nima.2016.01.027

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J.107 L. Gaioni, F. De Canio, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “Design andtest of clock distribution circuits for the Macro Pixel ASIC”, Nucl. Instrum. Meth.,vol. 824, pp. 287-289, 2016.ISSN: 0168-9002, doi: 10.1016/j.nima.2015.10.046

J.108 L. Gaioni, F. De Canio, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “65 nm CMOSanalog front-end for pixel detectors at the HL-LHC”, Journal of Instrumentation,vol. 11, 2016.ISSN: 1748-0221, doi: 10.1088/1748-0221/11/02/C02049

International Conference Proceedings

P.1 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Noise behavior under γ irradiation 2000of 0.35 µm CMOS transistors”, proceedings of RADECS 2000 Workshop, RadiationEffects on Components and Systems, Université catholique de Louvain, Louvain-la-Neuve, Belgium, 11-13 september 2000, pp. 126-131.

P.2 L. Ratti, M. Manghisoni, V. Re, V. Speziali, “Integrated front-end electronics in a de- 2001tector compatible process: source-follower and charge-sensitive preamplifier configu-rations”, Hard X-Ray and Gamma-Ray Detector Physics III, Ralph B. James, Editor,proceedings of SPIE vol. 4507, pp. 141-151, 2001.ISSN: 0277786X, doi: 10.1117/12.450752

P.3 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Radiation tolerance of a 0.18 µm CMOSprocess”, proceedings of the 7th International Conference on Advanced Technologyand Particle Physics, Villa Olmo, Como (Italy), 15-19 ottobre 2001, World ScientificPublishing, pp.787-791.ISBN: 981-238-180-5, doi:10.1142/9789812776464 0111

P.4 M. Manghisoni et al. “Fabrication of microstrip detectors and integrated electronics onhigh resistivity silicon”, proceedings of the 7th International Conference on AdvancedTechnology and Particle Physics, Villa Olmo, Como (Italy), 15-19 ottobre 2001, WorldScientific Publishing, pp. 241-245.ISBN: 981-238-180-5, doi:10.1142/9789812776464 0036

P.5 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Instrumentation for noise measurementson CMOS transistors for fast detector preamplifiers”, Nuclear Science SymposiumConference Record, 2001 IEEE, San Diego, (CA), Nov. 04-10, 2001, pp. 2372-2376.ISSN: 1082-3654, ISBN: 0-7803-7324-3, doi:10.1109/NSSMIC.2001.1009298

P.6 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Deep submicron CMOS transistors forlow-noise front-end systems”, Nuclear Science Symposium Conference Record, 2001IEEE, San Diego, (CA), Nov. 04-10, 2001, pp. 2372-2376.ISSN: 1082-3654, ISBN: 0-7803-7324-3, doi:10.1109/NSSMIC.2001.1009722

P.7 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, G.F.D. Betta, M. Boscardin, 2002G. Batignani, M. Giorgi, L. Bosisio, “JFET front-end circuits integrated in a detector-grade silicon substrate”, Nuclear Science Symposium Conference Record, 2002 IEEE,Norfolk, (VA), Nov. 10-16, 2002, pp. 116-120.ISSN: 1082-3654 ISBN: 0-7803-7636-6, doi:10.1109/NSSMIC.2002.1239280

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P.8 G.F. Dalla Betta, M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Ionizingradiation effects on JFET devices and circuits fabricated in a detector-compatible pro-cess”, Proceedings European Conference on Radiation and its Effects on Componentsand Systems (RADECS 2002), pp. 21-24, 19-20 Sep. 2002, Padova (Italia).

P.9 M. Manghisoni, L. Ratti, G. Traversi, “X-ray effects on the noise performances of 0.18 2003and 0.25 µm CMOS processes for front-end applications ”, proceedings of the 8th Int.Conf. on Advanced Technology and Particle Physics, Villa Olmo, Como (Italy), 6-10ottobre 2003, World Scientific Publishing, pp. 646-650.ISBN: 981-238-860-5, doi:10.1142/9789812702708 0097

P.10 L. Ratti, V. Re, V. Speziali, G. Traversi, M. Manghisoni, V. Re, G. Fallica, S. Leo-nardi, “Noise analysis of NPN SOI bipolar transistors for the design of charge measu-ring systems”, Nuclear Science Symposium Conference Record, 2003 IEEE, Portland,(OR), Oct. 19-25, 2003, pp. 1091-1095.ISSN: 1082-3654 ISBN: 0-7803-8257-9, doi:10.1109/NSSMIC.2003.1351882

P.11 G.F. Dalla Betta, M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, A. Can-delori, “Proton-induced damage in JFET transistor and charge preamplifier on high-resistivity silicon”, Proceedings of 7th European Conference on Radiation Effects onComponents and Systems (RADECS 2003), Noordwijk (Olanda), 15-19 Settembre,2003.ISSN: 0379-6566, ISBN: 92-9092-846-8

P.12 L. Ratti, G.F. Dalla Betta, M. Manghisoni, V. Re, V. Speziali, G. Traversi, A. Can- 2004delori, “Bulk damage in proton irradiated JFET transistor and charge preamplifieron high-resistivity silicon”, proceedings of the 2nd SIRAD Workshop, INFN NationalLaboratory of Legnaro (LNL), Legnaro (PD), Italia, 1-2 aprile 2004.

P.13 L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, G. Fallica, R. Modica, A.Candelori, “Radiation hardness study of proton irradiated SOI bipolar transistors”,proceedings of RADECS 2004 Workshop, Radiation Effects on Components and Sy-stems, Madrid, Spain, 22-24 September 2004, pp. 23-29.ISBN: 84-930056-1-4

P.14 R. Yarema, J. Hoff, A. Mekkaoui, M. Manghisoni, V. Re, V. Angeleri, P.F. Manfredi,L. Ratti, V. Speziali, “Fermilab silicon strip readout chip for BTEV ”, Nuclear ScienceSymposium Conference Record, 2004 IEEE, Rome, (Italy), Oct. 16-22, 2004, pp. 959-963.ISSN: 1082-3654, ISBN: 0-7803-8700-7, doi: 10.1109/NSSMIC.2004.1462366

P.15 V. Re, M. Manghisoni, L. Ratti, V. Speziali, “Survey of noise performances andscaling effects in deep submicron CMOS devices from different foundries”, NuclearScience Symposium Conference Record, 2004 IEEE, Rome, (Italy), Oct. 16-22, 2004,pp. 1368-1372.ISSN: 1082-3654, ISBN: 0-7803-8700-7, doi: 10.1109/NSSMIC.2004.1462496

P.16 L. Ratti, M. Manghisoni, E. Oberti, V. Re, V. Speziali, G. Traversi, G. Fallica, R.Modica, “Response of SOI Bipolar Transistors Exposed to γ-Rays under DifferentDose Rate and Bias Conditions”, Nuclear Science Symposium Conference Record, 2004IEEE, Rome, (Italy), Oct. 16-22, 2004, pp. 756-760.ISSN: 1082-3654, ISBN: 0-7803-8700-7, doi: 10.1109/NSSMIC.2004.1462320

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P.17 V. Re, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, “Total ionizing dose effects 2005on the analog performance of a 0.13 µm CMOS technology”, Radiation Effects DataWorkshop, 2005. IEEE 11-15 July 2005 pp. 122-126ISBN: 0-7803-9367-8, doi: 10.1109/REDW.2005.1532677

P.18 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “0.13 µm CMOS technolo-gies for analog front-end circuits in LHC detector upgrades”, proceedings of the 11th

Workshop on Electronics for LHC and Future Experiments, Heidelberg, Germany,12-16 September 2005, pp. 42-46.

P.19 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Noise performances of0.13 µm CMOS technologies for detector front-end applications”, Nuclear ScienceSymposium Conference Record, 2005 IEEE, Fajardo, (PR), Oct. 23-29, 2005, pp. 955-959.ISSN: 1095-7863, ISBN: 0-7803-9221-3, doi: 10.1109/NSSMIC.2005.1596412

P.20 L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, “Non-standard approachto charge signal processing in CMOS MAPS for charged particle trackers”, NuclearScience Symposium Conference Record, 2005 IEEE, Fajardo, (PR), Oct. 23-29, 2005,pp. 969-973.ISSN: 1095-7863, ISBN: 0-7803-9221-3, doi: 10.1109/NSSMIC.2005.1596415

P.21 V. Re, M. Manghisoni, L. Ratti, J. Hoff, A. Mekkaoui, R.J. Yarema, “FSSR2, aself-triggered low noise readout chip for silicon strip detectors”, Nuclear Science Sym-posium Conference Record, 2005 IEEE, Fajardo, (PR), Oct. 23-29, 2005, pp. 896-900.ISSN: 1095-7863 ISBN: 0-7803-9221-3, doi: 10.1109/NSSMIC.2005.1596399

P.22 M. Manghisoni, et al., “Triple well CMOS active pixel sensor with in-pixel full signalanalog”, Nuclear Science Symposium Conference Record, 2005 IEEE, Fajardo, (PR),Oct. 23-29, 2005, pp. 1485-1489.ISSN: 1095-7863 ISBN: 0-7803-9221-3, doi: 10.1109/NSSMIC.2005.1596600

P.23 L. Ratti, M. Manghisoni, V. Re, G. Traversi, A. Candelori, “Radiation hardness test ofFSSR, a multichannel, mixed signal chip for microstrip detector readout”, presentatoal 8th European Conference on Radiation and Its Effects on Components and Systems,Palais des Congrès, Cap d’Agde, France, 19-23 September 2005.ISBN: 0780395018;978-078039501-5, doi: 10.1109/RADECS.2005.4365602

P.24 M. Manghisoni et al., “Development of 130 nm CMOS Monolithic Active Pixels with 2006In-Pixel Signal Processing”, Nuclear Science Symposium Conference Records, 2006,IEEE, Vol. 3, Oct. 29-Nov. 1, 2006, pp. 1456-1459.ISSN: 1095-7863, ISBN: 1-4244-0560-2, doi: 10.1109/NSSMIC.2006.354174

P.25 L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, “Design and Performanceof Analog Circuits for DNW-MAPS in 100-nm-scale CMOS Technology”, NuclearScience Symposium Conference Records, 2006, IEEE, Vol. 2, Oct. 29-Nov. 1, 2006,pp. 681-686.ISSN: 1095-7863, ISBN: 1-4244-0560-2, doi: 0.1109/NSSMIC.2006.355948

P.26 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Noise Characterization of130 nm and 90 nm CMOS Technologies for Analog Front-end Electronics”, NuclearScience Symposium Conference Records, 2006, IEEE, Vol. 1, Oct. 29-Nov. 1, 2006,

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pp. 214-218.ISSN: 1095-7863, ISBN: 1-4244-0560-2, doi: 10.1109/NSSMIC.2006.356142

P.27 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Low-noise Design Issues forAnalog Front-end Electronics in 130 and 90 nm CMOS Technologies”, Proceedings ofthe 12th Workshop on Electronics for LHC and Future Experiments, Valencia (Spain),25-29 Set. 2006, pp. 483-487.

P.28 M. Manghisoni et al., “CMOS MAPS with Fully Integrated, Hybrid-pixel-like AnalogFront-end Electronics”, Proceedings of International Symposium on Detector Develop-ment for Particle, Astroparticle and Synchrotron Radiation Experiments (SNIC 2006),Menlo Park, California, 3-6 Apr 2006, pp. 0008 (eConf C0604032 (2006)).

P.29 M. Manghisoni et al., “Proposal of a data sparsification unit for a mixed-mode MAPS 2007detector”, Nuclear Science Symposium Conference Records, 2007, IEEE, Vol. 2, Oct.26-Nov. 3, 2007, pp. 1471-1473.ISSN: 1095-7863, ISBN: 978-1-4244-0922-8, doi: 10.1109/NSSMIC.2007.4437277

P.30 V. Re, L. Gaioni, M. Manghisoni, L. Ratti, V. Speziali, G. Traversi, R. Yarema,“Perspectives for Low Noise Detector Readout in a Sub-quarter-micron CMOS SOITechnology”, Nuclear Science Symposium Conference Records, 2007, IEEE, Vol. 3,Oct. 26-Nov. 3, 2007, pp. 1873-1877.ISSN: 1095-7863, ISBN: 978-1-4244-0922-8, doi: 10.1109/NSSMIC.2007.4436522

P.31 L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, “Minimum noise designof Charge Preamplifers with CMOS Processes in the 100nm Feature Size Range”,Nuclear Science Symposium Conference Records, 2007, IEEE, Vol. 4, Oct. 26-Nov.3, 2007, pp. 2494-2502.ISSN: 1095-7863, ISBN: 978-1-4244-0922-8, doi: 10.1109/NSSMIC.2007.4436661

P.32 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Impact of Gate-leakageCurrent Noise in sub-100nm CMOS Front-end Electronics”, Nuclear Science Sympo-sium Conference Records, 2007, IEEE, Vol. 2, Oct. 26-Nov. 4, 2007, pp. 2503-2508.ISSN: 1095-7863, ISBN: 978-1-4244-0922-8, doi: 10.1109/NSSMIC.2007.4436662

P.33 M. Manghisoni et al., “Recent Development on Triple Well 130nm CMOS MAPSwith In-Pixel Signal Processing and Data Sparsification Capability”, Nuclear ScienceSymposium Conference Records, 2007, IEEE, Vol. 2, Oct. 26-Nov. 3, 2007, pp. 927-930.ISSN: 1095-7863, ISBN: 978-1-4244-0922-8, doi: 10.1109/NSSMIC.2007.4437170

P.34 G. Traversi, L. Ratti, M. Manghisoni, V. Re, V. Speziali, “Deep N-well CMOS MAPSwith in-pixel signal processing and sparsification capabilities for the ILC vertex de-tector”, presentato al 16th International Workshop on Vertex Detectors, Lake Placid(NY), USA, September 23-28, 2007, Proceedings of Science PoS(Vertex 2007)016.

P.35 M. Manghisoni et al., “Vertex Detector for the SuperB Factory”, presentato al 16thInternational Workshop on Vertex Detectors, Lake Placid (NY), USA, September 23-28, 2007, Proceedings of Science PoS(Vertex 2007)040.

P.36 E. Pozzati, M. Manghisoni, L.Ratti, V. Re, V. Speziali, G. Traversi, “MAPS in 130 nmtriple well CMOS technology for HEP applications”, Proceedings of the Topical Work-shop on Electronics and Particle Physics (TWEPP-07), Prague (Czech Republic), 3-7September 2007, pp. 492-496.

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P.37 M. Manghisoni et al., “Design of on-chip data sparsification for a Mixed-mode MAPSdevice”, Proceedings of the Topical Workshop on Electronics and Particle Physics(TWEPP-07), Prague (Czech Republic), 3-7 September 2007, pp. 443-444.

P.38 L. Ratti, L. Gaioni, M. Manghisoni, G. Traversi, D. Pantano, “Investigating Degra-dation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Exposedto up to 100 Mrad Ionizing Radiation Dose”, Proceedings 9th European Conference onRadiation and its Effects on Components and Systems (RADECS 2007), Deauville,France, September 10-14 2007, pp. 112-120.ISBN: 978-142441704-9, doi: 10.1109/RADECS.2007.5205526

P.39 M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, D. Pantano, V.Re, M. Manghisoni, L. Ratti, A. Ranieri, “Channel hot carrier stress on irradiated130-nm NMOSFETs: Impact of bias conditions during X-ray exposure”, Proceedings9th European Conference on Radiation and its Effects on Components and Systems(RADECS 2007), Deauville, France, September 10-14 2007, pp. 1-5.ISBN: 978-142441704-9, doi: 10.1109/RADECS.2007.5205571

P.40 C. Andreoli, M. Manghisoni, L. Ratti, G. Traversi, “Monolithic sensors in deep submi-cron CMOS technology for low material budget, high rate HEP applications”, Procee-dings of the 10th Conference on Astroparticle, Particle, Space Physics, Detectors andMedical Physics Applications ICATPP, Villa Olmo (CO), Italia, 8-12 October 2007,World Scientific Publishing, pp. 18-22.ISBN: 978-981-281-908-6

P.41 G. Traversi et al., “Monolithic Active Pixel Sensors in a 130nm Triple Well CMOSTechnology”, IFAE 2006 Italian Meeting on High Energy Physics, pp. 349-352, Springer-Verlag Italia 2007.ISBN 978-88-470-0529-7

P.42 M. Manghisoni, et al., “Performance of a DNW CMOS active pixel sensor designed 2008for the ILC Vertex Detector”, Nuclear Science Symposium Conference Records, 2008,IEEE, Oct. 19-25, 2008, pp. 1361-1368.ISSN: 1095-7863, ISBN: 978-1-4244-2714-7, doi: 10.1109/NSSMIC.2008.4774669

P.43 L. Ratti, C. Andreoli, L. Gaioni, M. Manghisoni, E. Pozzati, V. Re, G. Traversi, “TIDeffects in deep N-well CMOS monolithic active pixel sensors”, Radiation and Its Effectson Components and Systems (RADECS), 2008, Oct. 19-25, 2008, pp. 2962-2969.ISBN: 978-1-4577-0481-9, doi: 10.1109/RADECS.2008.5782738

P.44 M. Manghisoni, et al., “Time invariant analog processors for monolithic deep n-wellCMOS pixel detectors”, Nuclear Science Symposium Conference Records, 2008, IEEE,Sept. 10-12, 2008, pp. 332-337.ISSN: 1095-7863, ISBN: 978-1-4244-2714-7, doi: 10.1109/NSSMIC.2008.4774985

P.45 M. Manghisoni, et al., “Development of deep N-well MAPS in a 130 nm CMOStechnology and beam test results on a 4k-pixel matrix with digital sparsified readout”,Nuclear Science Symposium Conference Records, 2008, IEEE, Oct. 19-25, 2008, pp.3242-3247.ISSN: 1095-7863, ISBN: 978-1-4244-2714-7, doi: 10.1109/NSSMIC.2008.4775038

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P.46 M. Manghisoni, et al., “The associative memory for the self-triggered SLIM5 silicontelescope”, Nuclear Science Symposium Conference Records, 2008, IEEE, Oct. 19-25,2008, pp. 2765-2769.ISSN: 1095-7863, ISBN: 978-1-4244-2714-7, doi: 10.1109/NSSMIC.2008.4774945

P.47 M. Manghisoni, et al., “Review of radiation effects leading to noise performance de-gradation in 100 - nm scale microelectronic technologies”, Nuclear Science SymposiumConference Records, 2008, IEEE, Oct. 19-25, 2008, pp. 3086-3090.ISSN: 1095-7863, ISBN: 978-1-4244-2714-7, doi: 10.1109/NSSMIC.2008.4775008

P.48 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Instrumentationfor Gate Current Noise Measurements on sub-100nm MOS Transistors”, Proceedings ofthe Topical Workshop on Electronics for Particle Physics (TWEPP), Naxos, Greece,Sept. 15-19, 2008, pp. 436-440.

P.49 L. Ratti, L. Gaioni, A. Manazza, M. Manghisoni, V. Re, G. Traversi, “3D DNW 2009MAPS for high resolution, highly efficient, sparse readout CMOS detectors”, NuclearScience Symposium Conference Records, 2009, IEEE, Oct. 24-Nov. 1, 2009, pp. 1716-1723.ISSN: 1095-7863 ISBN: 978-1-4244-3961-4, doi: 10.1109/NSSMIC.2009.5402226

P.50 G. Traversi, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, V. Re, “Charge signalprocessors in sparse readout CMOS MAPS and hybrid pixel sensors for the SuperBLayer0”, Nuclear Science Symposium Conference Records, 2008, IEEE, Oct. 24-Nov.1, 2009, pp. 61-67.ISSN: 1095-7863 ISBN: 978-1-4244-3961-4, doi: 10.1109/NSSMIC.2009.5401879

P.51 L. Ratti, M. Dellagiovanna, M. Manghisoni, V. Re, G. Traversi, S. Zucca, S. Bettarini,F. Morsani, G. Rizzo, “Front-end performance and charge collection properties of hea-vily irradiated DNW MAPS”, Radiation and Its Effects on Components and Systems(RADECS), 2009, Sept. 14-18, 2009, pp. 33-40.ISBN: 978-1-4577-0492-5, doi: 10.1109/RADECS.2009.5994549

P.52 L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “MAPS withpixel level sparsified readout: from standard CMOS to vertical integration”, presentatoal 18th International Workshop on Vertex Detectors, Putten (Netherlands), September13-18, 2009, Proceedings of Science PoS(Vertex 2009) 012.

P.53 L. Ratti, M. Caccia, L. Gaioni, A. Manazza, M. Manghisoni, V. Re, G. Traversi, 2010S. Zucca, “CMOS monolithic sensors in a homogeneous 3D process for low energyparticle imaging”, Nuclear Science Symposium Conference Records, 2010, IEEE, Oct.30-Nov. 6, 2010, pp. 1-6.ISSN: 1095-7863 ISBN: 978-1-4244-9106-3, doi: 10.1109/NSSMIC.2010.6036248

P.54 M. Manghisoni, et al., “Pixel readout ASIC with per pixel digitization and digitalstorage for the DSSC detector at XFEL”, Nuclear Science Symposium ConferenceRecords, 2010, IEEE, Oct. 30-Nov. 6, 2010, pp. 336-341.ISSN: 1095-7863 ISBN: 978-1-4244-9106-3, doi: 10.1109/NSSMIC.2010.5873776

P.55 M. Manghisoni, E. Quartieri, L. Ratti, G. Traversi, “High accuracy injection circuit forpixel-level calibration of readout electronics”, Nuclear Science Symposium ConferenceRecords, 2010, IEEE, Oct. 30-Nov. 6, 2010, pp. 1312-1318.ISSN: 1095-7863 ISBN: 978-1-4244-9106-3, doi: 10.1109/NSSMIC.2010.5873981

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P.56 M. Manghisoni, et al., “Thin pixel development for the Layer0 of the SuperB SiliconVertex Tracker ”, Nuclear Science Symposium Conference Records, 2010, IEEE, Oct.30-Nov. 6, 2010, pp. 1901-1905 .ISSN: 1095-7863 ISBN: 978-1-4244-9106-3, doi: 10.1109/NSSMIC.2010.5874105

P.57 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “Evaluation of the radiationtolerance of 65 nm CMOS devices for high-density front-end electronics”, NuclearScience Symposium Conference Records, 2010, IEEE, Oct. 30-Nov. 6, 2010, pp. 594-600 .ISSN: 1095-7863 ISBN: 978-1-4244-9106-3, doi: 10.1109/NSSMIC.2010.5873829

P.58 M. Manghisoni, “Recent results and plans of the 3D IC consortium”, Proceedings ofScience PoS (Vertex 2010) 032, 19th International Workshop on Vertex Detectors -VERTEX 2010, Jun. 6-11, 2010, Loch Lomond, Scotland, UK.

P.59 A. Manazza, L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, S. Zucca, “Verti- 2011cal integration approach to the readout of pixel detectors for vertexing applications”,Nuclear Science Symposium Conference Records, 2011, IEEE, Oct. 23-29 , 2011, pp.641-647.ISSN: 1082-3654, ISBN: 978-1-4673-0118-3, doi: 10.1109/NSSMIC.2011.6153983

P.60 M. Manghisoni, et al., “2D and 3D thin pixel technologies for the Layer0 of the SuperBSilicon Vertex Tracker”, Nuclear Science Symposium Conference Records, 2011, IEEE,Oct. 23-29 , 2011, pp. 1324-1328.ISSN: 1082-3654, ISBN: 978-1-4673-0118-3, doi: 10.1109/NSSMIC.2011.6154335

P.61 M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi, “Analog design criteria forhigh-granularity detector readout in the 65 nm CMOS technology”, Nuclear ScienceSymposium Conference Records, 2011, IEEE, Oct. 23-29 , 2011, pp. 1961-1965.ISSN: 1082-3654, ISBN: 978-1-4673-0118-3, doi: 10.1109/NSSMIC.2011.6154394

P.62 E. Quartieri, M. Manghisoni, “Performance of a high accuracy injection circuit forin-pixel calibration of a large sensor matrix”, Nuclear Science Symposium ConferenceRecords, 2011, IEEE, Oct. 23-29 , 2011, pp. 677-681.ISSN: 1082-3654, ISBN: 978-1-4673-0118-3, 10.1109/NSSMIC.2011.6154081

P.63 E. Quartieri, M. Manghisoni, “High precision injection circuit for in-pixel calibrationof a large sensor matrix”, Ph.D. Research in Microelectronics and Electronics (PRI-ME), 2011 7th Conference on , pp. 73-76, 2011.E-ISBN: 978-1-4244-9136-0 , doi: 10.1109/PRIME.2011.5966220

P.64 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “The Apsel65 front-end chipfor the readout of pixel sensors in the 65 nm CMOS node”, Nuclear Science SymposiumConference Records, 2011, IEEE, Oct. 23-29, 2011, pp. 1966-1971.ISSN: 1082-3654, ISBN: 978-1-4673-0118-3, doi: 10.1109/NSSMIC.2011.6154395

P.65 M. Manghisoni, et al., “R&D Progress on The SuperB Silicon Vertex Tracker”, Pro-ceedings of 10th International Conference on Large Scale Applications and RadiationHardness of Semiconductor Detectors, Florence, Italy, 6-8 July 2011

P.66 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “A 65 nm CMOS Front- 2012End Chip for High Density Readout of Pixel Sensors”, Proceedings of GE2012, 44th

Conference, Marina di Carrara, PI, Italia, 20-22 Giugno, 2012, Pisa University Press.

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P.67 M. Manghisoni et al., “The SuperB Silicon Vertex Tracker”, presentato al 21st

International Workshop on Vertex Detectors, Jeju, Korea, 17-21 September, 2012,Proceedings of Science PoS(Vertex 2012)029.

P.68 G. Traversi, M. Manghisoni, L. Gaioni, L. Ratti, V. Re, “Perspectives of 65nm CMOStechnologies for High Performance Front-End Electronics in Future Applications”,presentato al 21st International Workshop on Vertex Detectors, Jeju, Korea, 17-21September, 2012, Proceedings of Science PoS(Vertex 2012)026.

P.69 A. Manazza, M. Manghisoni, L. Ratti, V. Re, G. Traversi, S. Bettarini, F. Morsani,G. Rizzo, “CMOS MAPS in a Homogeneous 3D Process for Charged Particle Trac-king”, 2012 Nuclear Science Symposium, Medical Imaging Conference, October 29 -November 3, 2012, Anaheim, California, (USA). pp. 2041-2047.ISSN: 1082-3654, ISBN: 978-1-4673-2028-3, doi: 10.1109/NSSMIC.2012.6551472

P.70 G. Traversi, L. Gaioni, M. Manghisoni, L. Ratti, V. Re, “Fast Analog Front-end forthe Readout of the SuperB SVT Inner Layers”, 2012 Nuclear Science Symposium,Medical Imaging Conference, October 29 - November 3, 2012, Anaheim, California,(USA). pp. 841-847.ISSN: 1082-3654, ISBN: 978-1-4673-2028-3, doi: 10.1109/NSSMIC.2012.6551223

P.71 F. Erdinger, L. Bombelli, D. Comotti, S. Facchinetti, P. Fischer, K. Hansen, P. Ka-valakuru, M. Kirchgessner, M. Manghisoni, M. Porro, E. Quartieri, C. Reckleben,J. Soldat, J. Szymanski, “The DSSC Pixel Readout ASIC with Amplitude Digitiza-tion and Local Storage for DEPFET Sensor Matrices at the European XFEL”, 2012Nuclear Science Symposium, Medical Imaging Conference, October 29 - November 3,2012, Anaheim, California, (USA). pp. 591-596.ISSN: 1082-3654, ISBN: 978-1-4673-2028-3 , doi: 10.1109/NSSMIC.2012.6551176

P.72 L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, “Design of a monolithic 2013active pixel sensor in a two-layer 3D CMOS technology”, Proceedings of GE2013, 45th

Conference, Udine, Italia, 17-21 Giugno, 2013, Pisa University Press.

P.73 A. Manazza, L. Gaioni, M. Manghisoni, L. Ratti, V. Re, G. Traversi, C. Vacchi,“Characterization of a large scale DNW MAPS fabricated in a 3D process”, presen-tato al 2013 Nuclear Science Symposium, Medical Imaging Conference, October 27 -November 2, 2013, COEX, Seoul, Korea.

P.74 L. Ratti, M. Manghisoni, V. Re, G. Traversi, “Discriminators in 65nm CMOS processfor high granularity, high time resolution pixel detectors”, presentato al 2013 NuclearScience Symposium, Medical Imaging Conference, October 27 - November 2, 2013,COEX, Seoul, Korea.

P.75 S. Zucca, M. Manghisoni, L. Ratti, V. Re, G. Traversi, S. Bettarini, F. Morsani,G. Rizzo, “Effects of substrate thinning on the properties of quadruple well CMOSMAPS”, presentato al 2013 Nuclear Science Symposium, Medical Imaging Conference,October 27 - November 2, 2013, COEX, Seoul, Korea.

P.76 V. Re, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, G. Traversi, “Active pixel sen-sors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOStechnology”, 2013 IEEE International 3D Systems Integration Conference, 3DIC, Oc-tober 2-4, 2013, San Francisco (CA), USA.doi: 10.1109/3DIC.2013.6702333

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P.77 D. Comotti, L. Fabris, M. Grassi, L. Lodola, P. Malcovati, M. Manghisoni, L. Ratti, 2014V. Re, G. Traversi, C. Vacchi, G. Batignani, S. Bettarini, G. Casarosa, F. Forti, F.Morsani, A. Paladino, E. Paoloni, G. Rizzo, M. A. Benckechkache, G. F. Dalla Betta,R. Mendicino, L. Pancheri, G. Verzellesi, H. Xu, “Low-noise readout channel witha novel dynamic signal compression for future X-FEL applications”, 2014 NuclearScience Symposium and Medical Imaging Conference, 8-15 November 2014, Seattle,WA USA.doi: 10.1109/NSSMIC.2014.7431119

P.78 L. Ratti, D. Comotti, L. Fabris, M. Grassi, L. Lodola, P. Malcovati, M. Manghisoni,V. Re, G. Traversi, C. Vacchi, G. Batignani, S. Bettarini, G. Casarosa, F. Forti, F.Morsani, A. Paladino, E. Paoloni, G. Rizzo, M. A. Benkechkache, G.-F. Dalla Bet-ta, R. Mendicino, L. Pancheri, G. Verzellesi, H. Xu, “PixFEL: Enabling technologies,building blocks and architectures for advanced X-ray pixel cameras at the next ge-neration FELs”, 2014 Nuclear Science Symposium and Medical Imaging Conference,8-15 November 2014, Seattle, WA USA.doi: 10.1109/NSSMIC.2014.7431212

P.79 G.-F. Dalla Betta, G. Batignani, M.A. Benkechkache, S. Bettarini, G. Casarosa, D.Comotti, L. Fabris, F. Forti, M. Grassi, S. Latreche-Lassoued, L. Lodola, P. Malcovati,M. Manghisoni, R. Mendicino, F. Morsani, A. Paladino, L. Pancheri, E. Paoloni, L.Ratti, V. Re, G. Rizzo, G. Traversi, C. Vacchi, G. Verzellesi, H. Xu, “Design andTCAD simulations of planar active-edge pixel sensors for future XFEL applications”,2014 Nuclear Science Symposium and Medical Imaging Conference, 8-15 November2014, Seattle, WA USA.doi: 10.1109/NSSMIC.2014.7431078

P.80 N. Demaria, G. Dellacasa, G. Mazza, A. Rivetti, M.D. Da Rocha Rolo, E. Monteil, L. 2015Pacher, F. Ciciriello, F. Corsi, C. Marzocca, G. De Roberts, F. Loddo, C. Tamma, M.Bagatin, D. Bisello, S. Gerardin, S. Mattiazzo, L. Ding, P. Giubilato, A. Paccagnella,F. De Canio, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, E. Riceputi, L. Ratti,C. Vacchi, R. Beccherle, G. Magazzu, M. Minuti, F. Morsani, F. Palla, V. Liberali,S. Shojaii, A. Stabile, G.M. Bilei, M. Menichelli, E. Conti, S. Marconi, D. Passen,P. Placidi, “CHIPIX65: Developments on a new generation pixel readout ASIC inCMOS 65 nm for HEP experiments”, 6th IEEE International Workshop on Advancesin Sensors and Interfaces (IWASI), pp. 49-54, IEEE, Gallipoli, Italy, 18-19 June 2015.ISBN: 978-1-4799-8981-2, doi: 10.1109/IWASI.2015.7184947

P.81 M. Manghisoni, D. comotti, L. Gaioni, A. Manazza, L. Ratti, V. Re, G. Traversi,C. Vacchi, “Novel active signal compression in low-noise analog readout at future X-ray FEL facilities”, 7th International Workshop on Semiconductor Pixel Detectors forParticles and Imaging (PIXEL 2014) Journal of Instrumentation, vol. 10, 2015.ISSN: 1748-0221, doi: 10.1088/1748-0221/10/04/C04003

Book chapters

B.1 L. Ratti, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, S. Bettarini, F. Forti, F. Mor-sani, G. Rizzo, L. Bosisio, I. Rashevskaya, “CMOS Monolithic Sensors with HybridPixel-Like, Time-Invariant Front-End Electronics : TID Effects and Bulk Damage

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Study”, in: (a cura di): M. Bagatin, S. Gerardin, Ionizing Radiation Effects in Elec-tronics: From Memories to Imagers, pp. 265-293, Oxon:CRC Press,ISBN: 9781498722605

Papers presented at international conferences

C.1 M. Manghisoni, et al., “Monolithic active pixel sensors in a 130 nm triple well CMOS 2006process”, 6th International Meeting on Front-End Electronics, Perugia, Italy, May17-20 2006.

C.2 L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, “CMOS processes in the100-nm minimum feature size range for applications to the next generation colliderexperiments”, 6th International Meeting on Front-End Electronics, Perugia, Italy, May17-20 2006.

C.3 M. Manghisoni, et al., “CMOS MAPS with hybrid-pixel-like analog readout electronicsin a 130 nm process”, ILC VTX Workshop, a Vertex Detector for the ILC, RingbergCastle, Germany, May 28-31 2006.

C.4 L. Ratti, E. Pozzati, C. Andreoli, M. Manghisoni, V. Re, V. Speziali, G. Traversi,“CMOS Monolithic Sensors with Sparsified Readout and Time Stamping Capabili-ties for Vertexing Applications at the ILC”, International Linear Collider Workshop,Valencia, Spain, November 6-10 2006.

C.5 M. Manghisoni, et al., “Deep N-well 130nm CMOS MAPS for the ILC vertex detector”, 2007ILC Vertex Detector Review, Chicago (USA), 22 ottobre, 2007.

C.6 M. Manghisoni, et al., “Deep N-well 130nm CMOS MAPS for the ILC vertex detector”, 2008International Linear Collider Workshop, Villa Vigoni (CO), Italia, 21-24 Aprile, 2008.

C.7 G. Traversi, L. Ratti, L. Gaioni, M. Manghisoni, V. Re, V. Speziali, “3D deep N-well 2009MAPS with sparse readout, for high resolution, highly efficient particle tracking”, 7th

International Meeting on Front-End Electronics, Montauk (USA), May 18-21, 2009.

C.8 V. Re, L. Gaioni, L. Ratti, M. Manghisoni, G. Traversi, “Noise and radiation tole-rance of sub-100nm CMOS technologies”, 7th International Meeting on Front-EndElectronics, Montauk (USA), May 18-21, 2009.

C.9 L. Ratti, L. Gaioni, A. Manazza, M. Manghisoni, E. Quartieri, V. Re, G. Traversi, 2010S. Zucca, “3D deep N-well MAPS”, Workshop on Vertically Integrated Pixel Sensors(VIPS 2010), Pavia, Italy, April 22-24, 2010.

C.10 M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi, “Design and tests of pixel 2011readout circuits in 65 nm CMOS”, 8th International Meeting on Front-End Electronics,Bergamo, Italia, May 24-27, 2011.

C.11 S.Zucca, L. Gaioni, A. Manazza, M. Manghisoni, L. Ratti, V. Re, E. Quartieri, G.Traversi, “Analog front-ends for monolithic and hybrid pixels developed with a 3DCMOS process”, 8th International Meeting on Front-End Electronics, Bergamo, Italia,May 24-27, 2011.

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C.12 M. Manghisoni, L. Gaioni, L. Ratti, V. Re, G. Traversi, “Noise and radiation hardnessof 65 nm CMOS transistors and pixel front-ends”, Topical Workshop on Electronicsfor Particle Physics 2011, Vienna, Austria, September 26-30, 2011.

C.13 M. Manghisoni, “Readout Channel with Dynamic Range Compression for Signal 2016Processing in Applications at Future X-ray FEL”, 10th International Meeting onFront-End Electronics, 30 May-3 June 2016, Krakow, Poland.

C.14 V. Re, L. Gaioni, L. Ratti, E. Riceputi, M. Manghisoni, G. Traversi, “Noise measure-ments on 65 nm CMOS transistors at very high total ionizing dose”, 10th InternationalMeeting on Front-End Electronics, 30 May-3 June 2016, Krakow, Poland.

C.15 L. Ratti, F. De Canio, L. Gaioni, M. Manghisoni, V. Re, G. Traversi, “An asynchro-nous pixel front-end channel in 65 nm CMOS for the HL-LHC experiment upgrades”,10th International Meeting on Front-End Electronics, 30 May-3 June 2016, Krakow,Poland.

Communications to national conferences

I.1 M. Manghisoni, L. Ratti, “Effetti di riduzione della lunghezza di canale sul rumore termi- 2000co di MOS submicrometrici”, presentato alla Riunione Nazionale Gruppo Elettronica,Parma, Italy, 8-10 giugno 2000.

I.2 M. Manghisoni, L. Ratti, V. Re, V. Speziali, “Progetto di preamplificatori integratisu substrato ad alta resistività per rivelatori a microstrip”, presentato all’LXXXVICongresso Nazionale della Società Italiana di Fisica, Palermo, 6-11 ottobre 2000.

I.3 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Criteri di progettazione per 2001elettronica a basso rumore in tecnologia CMOS a canale submicrometrico”, presentatoalla Riunione Nazionale Gruppo Elettronica, Palermo, Italy, 11-16 giugno 2001.

I.4 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Caratterizzazione di tecno- 2002logie CMOS a canale submicrometrico per applicazioni analogiche a basso rumore ebasso consumo di potenza”, presentato alla Riunione Nazionale Gruppo Elettronica,Trieste, Italy, 6-8 giugno 2002.

I.5 M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, “Strumentazione per misure di 2003densità spettrale di rumore di dispositivi CMOS a canale submicrometrico”, presentatoalla Riunione Nazionale Gruppo Elettronica, Passignano sul Trasimeno (PG), Italy,9-14 giugno 2003.

I.6 G. Traversi, V. Angeleri, M. Manghisoni, E. Oberti, L. Ratti, V. Re, V. Speziali, “Tran- 2004sistori bipolari a giunzione su strato isolante: studio della tolleranza a raggi gam-ma e protoni per applicazioni spaziali”, presentato alla Riunione Nazionale GruppoElettronica, Courmayeur (AO), Italy, 24-26 giugno 2004.

I.7 V. Angeleri, M. Manghisoni, E. Oberti, L. Ratti, V. Re, V. Speziali, G. Traversi, “Siste-ma di lettura binario a basso rumore e bassa dispersione di soglia in tecnologia CMOSda 0.25 µm”, presentato alla Riunione Nazionale Gruppo Elettronica, Courmayeur(AO), Italy, 24-26 giugno 2004.

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I.8 P.F. Manfredi, M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi, V. Angeleri, E.Oberti, “Elettronica di front-end per rivelatori di particelle”, presentato alla Giornatadi Studio sulla Fisica a Pavia, INFN, 1 aprile 2004.

I.9 M. Manghisoni et al., “Bulk damage in proton irradiated JFET transistors and chargepreamplifiers on high-resistivity silicon”, presentato al 2th SIRAD Workshop, INFNNational Laboratory of Legnaro (LNL), Legnaro (PD), Italia, 1-2 Apr. 2004.

I.10 M. Manghisoni et al., “Tolleranza alle radiazioni in transistori bipolari SOI esposti araggi gamma e protoni: effetti di dose rate e dipendenza dalle condizioni di polariz-zazione”, presentato alla Riunione Nazionale Gruppo Elettronica, Courmayeur (AO),Italia, 24-26 giugno 2004.

I.11 G. Traversi, M. Manghisoni, L. Ratti, “Sensori monolitici a pixel attivi in tecnologia 2005CMOS da 0.13 µm con elettronica di lettura integrata”, presentato alla RiunioneNazionale Gruppo Elettronica, Giardini Naxos (ME), Italy, 30 giugno-2 luglio 2005.

I.12 M. Manghisoni et al., “Sensori a pixel attivi monolitici in tecnologia CMOS da 130 2006nm”, presentato agli Incontri di Fisica delle Alte Energie, IFAE 2006, Pavia, 19-21aprile 2006.

I.13 C. Andreoli, E. Pozzati, M. manghisoni, L. Ratti, G. Traversi, “Elettronica di front-end per sensori monolitici a pixel attivi in tecnologia CMOS deep submicron a triplawell”, presentato alla Riunione Nazionale del Gruppo Elettronica, Ischia, Napoli, 21-23giugno 2006.

I.14 C. Andreoli, E. Pozzati, L. Ratti, M. Manghisoni, G. Traversi, “Sensori monolitici a 2007pixel attivi in tecnologia CMOS da 130 nm a lettura non sequenziale per tracciaturadi particelle cariche”, presentato alla Riunione Nazionale Gruppo Elettronica, Lerici(La Spezia), Italy, 20-22 giugno 2007.

I.15 G. Gaioni, M. Manghisoni, L. Ratti, G. Traversi, “Caratterizzazione di dispositiviCMOS da 90 nm per applicazioni rad-hard a basso rumore”, presentato alla RiunioneNazionale Gruppo Elettronica, Lerici (La Spezia), Italy, 20-22 giugno 2007.

I.16 M. Manghisoni et al., “Sensori a pixel monolitici per il rivelatore di vertice di ILC”, 2008presentato agli Incontri di Fisica delle Alte Energie, IFAE 2008, Bologna, 26-28 marzo2008.

I.17 M.Dellagiovanna, F.Bellotti, L. Gaioni, M. Manghisoni, L. Ratti, V.Re, G. Traversi,“Introducing 65nm CMOS technology in low-noise read-out of semiconductor detec- 2009tors”, presentato alla Riunione Nazionale del Gruppo Elettronica, Trento, Italia, 17-19giugno 2009.

I.18 E. Quartieri, M. Manghisoni, L. Ratti, G. Traversi, “High Accuracy Injection Circuit 2010for Pixel-Level Calibration of Readout Electronics”, presentato alla Riunione Nazio-nale del Gruppo Elettronica, Villa Mondragone, Frascati (Roma), Italia, 9-11 giugno2010.

I.19 A. Manazza, L. Ratti, L. Gaioni, M. Manghisoni, G. Traversi, S. Zucca “CMOS mono-lithic sensors in a homogeneous 3D process for charged particle tracking”, presentatoalla Riunione Nazionale del Gruppo Elettronica, Villa Mondragone, Frascati (Roma),Italia, 9-11 giugno 2010.

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