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SCIPP R&D on Long Shaping-Time Electronics

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SCIPP R&D on Long Shaping-Time Electronics. 4 th SiLC Meeting Barcelona, Spain (by remote connection) December 19 2006 Bruce Schumm. The SCIPP/UCSC ILC HARDWARE GROUP. Faculty/Senior Vitaliy Fadeyev Alex Grillo Bruce Schumm Abe Seiden. Post-Docs Jurgen Kroseberg Lei Wang. Students - PowerPoint PPT Presentation
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SCIPP R&D on Long Shaping-Time Electronics 4 th SiLC Meeting Barcelona, Spain (by remote connection) December 19 2006 Bruce Schumm
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Page 1: SCIPP R&D on Long Shaping-Time Electronics

SCIPP R&D on Long Shaping-Time Electronics

4th SiLC MeetingBarcelona, Spain (by remote connection)December 19 2006

Bruce Schumm

Page 2: SCIPP R&D on Long Shaping-Time Electronics

Faculty/Senior

Vitaliy FadeyevAlex Grillo

Bruce SchummAbe Seiden

Post-Docs

Jurgen KrosebergLei Wang

Students

Greg HornGabe Saffier-

Ewing

The SCIPP/UCSC ILC HARDWARE GROUP

Lead Engineer: Ned Spencer

Technical Staff: Max Wilder, Forest Martinez-McKinney

(Students are undergraduates from physics and engineering)

Page 3: SCIPP R&D on Long Shaping-Time Electronics

Silicon Microstrip Readout R&D

Initial Motivation

Exploit long shaping time (low noise) and power cycling to:• Remove electronics and cabling from active area (long ladders)• Eliminate need for active cooling

SiD Tracker

Page 4: SCIPP R&D on Long Shaping-Time Electronics

c

The Gossamer Tracker

Ideas:• Low noise readout Long ladders substantially limit electronics readout and support

• Thin inner detector layers

• Exploit duty cycle eliminate need for active cooling

Competitive with gaseous tracking over full range of momentum (also: forward region)

Alternative: shorter ladders, but better point resolution

Page 5: SCIPP R&D on Long Shaping-Time Electronics

Alternative: shorter ladders, but better point resolution

The LSTFE approach would be well suited to use in short-strip applications, and would offer several potential advantages relative to other approaches

• Optimized for LC tracking (less complex)

• More efficient data flow

• No need for buffering

Would require development of2000 channel chip w/ bump bonding (should be solved by KPiX development)

Page 6: SCIPP R&D on Long Shaping-Time Electronics

Pulse Development Simulation

Long Shaping-Time Limit: strip sees signal if and only if hole is collected onto strip (no electrostatic coupling to neighboring strips)

Include: Landau deposition (SSSimSide; Gerry Lynch LBNL), variable geometry, Lorentz angle, carrier diffusion, electronic noise and digitization effects

Christian Flacco & Michael Young (Grads); John Mikelich (Undergrad)

Page 7: SCIPP R&D on Long Shaping-Time Electronics

Result: S/N for 167cm Ladder

Simulation suggests that long-ladder operation is feasible

Page 8: SCIPP R&D on Long Shaping-Time Electronics

1 s shaping time; analog readout it Time-Over-Thres-hold with 400 nsec clock

Process: TSMC 0.25 m CMOS

The LSTFE-2 ASIC

Page 9: SCIPP R&D on Long Shaping-Time Electronics

1/4 mip

1 mip

128 mip

Operating point threshold

Readout threshold

Page 10: SCIPP R&D on Long Shaping-Time Electronics

Electronics SimulationDetector Noise:

From SPICE simulation, normalized to bench tests with GLAST electronicsAnalog Measurement:

Employs time-over-threshold with variable clock speed; lookup table provides conversions back into analog pulse height (as for actual data)

RMS

Gaussian Fit

Detector Resolution (units of 10m)Essential tool for design of front-end ASIC

Page 11: SCIPP R&D on Long Shaping-Time Electronics

FIF

O (L

eadin

g and

trailin

g transition

s)Low Comparator Leading-Edge-Enable Domain

Li

Hi

Hi+4

Hi+1

Hi+2

Hi+3

Hi+5

Hi+6

Li+1

Li+2

Li+3

Li+4

Li+5

Li+6

Proposed LSTFE Back-End Architecture

Clock Period = 400 nsec

EventTime

8:1 Multi-

plexing (clock = 50 ns)

Page 12: SCIPP R&D on Long Shaping-Time Electronics

DIGITAL ARCHITECTURE: FPGADEVELOPMENT

Digital logic should perform basic zero suppression (intrinsic data rate for entire tracker would be approximately 50 GHz), but must retain nearest-neighbor information for accurate centroid.

Page 13: SCIPP R&D on Long Shaping-Time Electronics

DIGITAL ARCHITECTURE VERIFICATION

ModelSim package permits realistic simulation of FPGA code (signal propagation not yet simulated)

Simulate detector background and noise rates for 500 GeV running, as a function of read-out threshold.

Per 128 channel chip ~ 7 kbit per spill 35 kbit/second

For entire long shaping-time tracker ~ 0.5 GHz data rate (x100 data rate suppression)

NominalReadoutThreshold

Page 14: SCIPP R&D on Long Shaping-Time Electronics

Note on LSTFE Digital Architecture

Use of time-over-threshold (vs. analog-to-digital conversion) permits real-time storage of pulse-height information.

No concern about buffering

LSTFE system can operate in arbitrarily high-rate environment; is ideal for (short ladder) forward tracking systems.

Page 15: SCIPP R&D on Long Shaping-Time Electronics

FPGA-based control and data-acquisition system

INITIAL RESULTS

LSTFE chip mounted on readout board

Page 16: SCIPP R&D on Long Shaping-Time Electronics

Note About LSTFE Shaping Time

Original target: shape = 3 sec, with some controlled variability (“ISHAPR”)Appropriate for long (2m) ladders

In actuality, shape ~ 1.5 sec; tests done at 1.2 sec, closer to optimum for SLAC short-ladder approach

Difference between target and actual shaping time understood in terms of simulation (full layout)

Page 17: SCIPP R&D on Long Shaping-Time Electronics

Comparator S Curves

Vary threshold for given input charge

Read out system with FPG-based DAQ

Get

1-erf(threshold)

with 50% point giving response, and width giving noise

Stable behavior toVthresh < 10% of min-i

Qin= 0.5 fC

Qin= 3.0 fCQin= 2.5 fC

Qin= 2.0 fCQin= 1.5 fC

Qin= 1.0 fC

Page 18: SCIPP R&D on Long Shaping-Time Electronics

Noise vs. Capacitance (at shape = 1.2 s)

Measured dependence is roughly(noise in equivalent electrons)

noise = 375 + 8.9*C

with C in pF.

Experience at 0.5 m had suggested that model noise parameters needed to be boosted by 20% or so; these results suggest 0.25 m model parameters are accurate

Noise performance somewhat better than anticipated.

Observed

Expected

1 meter

Page 19: SCIPP R&D on Long Shaping-Time Electronics

Channel-to-Channel Matching

Offset: 10 mV rms

Gain: 150 mV/fC <1% rms

Occupancy threshold of 1.2 fC (1875 e-) 180 mV

± 2 mV (20 e-) from gain variation± 10 mV (100 e-) from offset variation

Page 20: SCIPP R&D on Long Shaping-Time Electronics

Power Cycling

Idea (roughly): Latch operating bias points and isolate chip from outside world.

• Per-channel power consumption reduces from ~1 mW to ~10 W.

• Restoration to operating point should take ~ 1 msec.

Current status:

• Internal leakage (protection diodes + ?)degrades latched operating point

• Restoration takes ~40 msec (x5 power savings)

• Injection of small current (< 1 nA) to counter leakage allows for 1 msec restoration.

• Current focus of bench tests.

Page 21: SCIPP R&D on Long Shaping-Time Electronics

Preamp Response

Power Control

Shaper Response

Power Cycling with Small Injected Current

Need to determine whether leakage problem is fun-damental (to sub-strate) or not (protection diode leakage) to understand if we can design around the leakage. Another (vastly inferior) approach would be to design in an injected current (process/temp variation?

Page 22: SCIPP R&D on Long Shaping-Time Electronics

LONG LADDER CONSTRUCTION

Page 23: SCIPP R&D on Long Shaping-Time Electronics

LONG LADDER EXPERIENCE

LSTFE-2 DESIGN

LSTFE-1 gain rolls off at ~10 mip; are instituting log-amp design (50 mip dynamic range)

Power cycling sol’n that cancels (on-chip) leakage currents

Improved environmental isolation

Additional amplification stage (noise, shaping time, matching

Improved control of return-to-baseline for < 4 mip signals

Multi-channel (64? 128? 256?) w/ 8:1 multiplexing of output

Must still establish pad geometry (sensor choice!)

A current focus of SCIPP activity

With 40cm ladder (50pF load) are seeing ~30% greater noise than expected

Page 24: SCIPP R&D on Long Shaping-Time Electronics

LSTFE SUMMARY

The LSTFE readout system is:

• Universally applicable (long strips, short strips, central, forward, SiD, LDC, GLD)

• Specifically and carfully optimized for ILC tracking

• Relative simple (reliability, yield)

• In a relatively advanced stage of development

• Amplifier/comparator looks functional• Headway being made on fast power cycling• Digital architecture soon available on FPGA

• Hoping to join SiLC testbeam run in late 2007


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