Selection guide - Sep. 2014 Image SensorsImage...

Selection guide - Sep. 2014

Various types of image sensors covering a wide spectral response range for photometry

HAMAMATSU PHOTONICS K.K.

Image SensorsImage Sensors

1 Infrared detectors

Lineup of image sensors • • • • • • • • • • • • • • • • • • • • 1

Image sensor technology of Hamamatsu • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 5

Area image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 7

Back-thinned type CCD area

image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 7

Front-illuminated type CCD area

image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 13

Image sensors

Contents

HAMAMATSU deve lops and p roduces ad -

vanced image sensors for measurement appli-

cations in spectral and energy ranges includ-

ing infrared, visible, ultraviolet, vacuum ultra-

violet, soft X-rays and hard X-rays. We provide

a fu l l l ineup of image sensors to precisely

match the wavelength of interest and applica-

tion. HAMAMATSU complies with customer

needs such as for different window materials,

filters or fiber couplings. We also offer easy-

to-use driver circuits for device evaluation and

sensor/driver modules for OEM applications

as well as multichannel detector heads.

Various types of image sensors covering a wide spectral

response range for photometry

2Infrared detectors

Image sensor

CMOS area image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 15

Linear image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • 16

CMOS linear image sensors for

spectrophotometry • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 17

CCD linear image sensors for


NMOS linear image sensors for


CCD linear image sensors

for industry • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 22

CMOS linear image sensors

for industry • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 24

Photodiode arrays with amplifier • • • • • 26

Distance image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • 27

Image sensors for near infrared region • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 28

X-ray image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 31

X-ray flat panel sensors • • • • • • • • • • • • • • • • • • • • • 35

Related products for image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 37

Multichannel detector heads • • • • • • • • • • • • • • • • • • • • • • • • • • 37

Circuits for image sensors • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 40

1 Image sensors

CMOS linear image sensors for spectrophotometry

These are CMOS linear image sensors suitable for spectrophotometry.

• High sensitivity type• Variable integration time type• Standard type

17 to 19

CCD linear image sensors for spectrophotometry

The back-thinned type is CCD linear image sensors developed for spectrophotometers and feature high UV sensitivity and an internal electronic shutter.The front- illuminated type offers high sensitivity in the ultraviolet region (200 nm) nearly equal to back-thinned CCD, despite a front-illuminated CCD.

• Back-thinned type• Front-illuminated type

20

NMOS linear image sensors for spectrophotometry

Image sensors with high UV sensitivity and excellent output linearity, making them ideal for precision photometry

• Current output type (Standard type)• Current output type

(Infrared enhanced type)• Voltage output type

21

CCD linear image sensors for industry These are CCD linear image sensors suitable for industry.• Front-illuminated type• TDI-CCD image sensor

22, 23

CMOS linear image sensors for industry

CMOS linear image sensors incorporate a timing circuit and signal processing amplifiers integrated on the same chip, and operate from simple input pulses and a single power supply. Thus the external circuit can be simplified.

• Resin-sealed type package• High-speed readout type• High sensitivity type• Digital output type

24, 25

Linear image sensors

Back-thinned type CCD area image sensors

CCD area image sensors delivering high quantum efficiency from visible to VUV region

• For spectrophotometry• For spectrophotometry (High resolution type)• For spectrophotometry (Low etaloning type)• For spectrophotometry (IR-enhanced type)• For spectrophotometry (Large full well type)• For ICP spectrophotometry• For scientific measurement• Fully-depleted CCD area image sensor

7 to 12

Front-illuminated type CCD area image sensors

Low dark current and low noise CCD area image sensors are ideal for scientific measurement instruments.

• For spectrophotometry• For scientific measurement

13, 14

CMOS area image sensorsThese are APS type CMOS area image sensors with high sensitivity in the near infrared region.

• SXGA format type• VGA format type

15

Area image sensors

Lineup of image sensors

Product name Feature Lineup Page

Photodiode arrays with amplifierSensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be configured by arranging multiple arrays in a row.

• Long and narrow area type 26

Photodiode arrays with amplifier

Distance image sensorsThese distance image sensors are designed to measure the distance to an object by TOF method.

• Distance linear image sensor• Distance area image sensor

27

Distance image sensors

InGaAs linear image sensorsImage sensors for near infrared region. Built- in CMOS IC allows easy operation.

• InGaAs linear image sensors for NIR spectrometry

• InGaAs linear image sensors for DWDM monitor 28 to 30

InGaAs area image sensors• Thermal imaging monitor• For near infrared image detection

Image sensors for near infrared region

Image sensors 2

Multichannel detector headsMultichannel detector heads designed as easy-to-use driver circuits for various types of image sensors

• For front-illuminated type CCD area image sensors

• For back-thinned type CCD area image sensors (1)

• For NMOS linear image sensors• For InGaAs linear image sensors• For InGaAs area image sensors

37 to 39

Circuits for image sensorsDriver circuits and pulse generators designed for various image sensors

• Driver circuits for CCD image sensors• Driver circuits for NMOS linear image

sensors (Current output type)• Pulse generator for NMOS linear image

sensor driver circuits• Driver circuits for CMOS linear image sensors• Driver circuit for InGaAs linear image sensors

40 to 43

Related products for image sensors

X-ray flat panel sensorsDigital X- ray image sensors developed as key devices for real -time X- ray imaging applications requir ing high sensitivity and high image quality

• For radiography (rotational type)• For radiography (biochemical imaging)• Low noise type

35, 36

X-ray flat panel sensors

Product name Feature Lineup Page

X-ray image sensorsImage sensors and photodiode arrays deliver high quality X-ray images by coupling FOS (fiber optic plate coated with X-ray scintillator) and phosphor sheet.

• CCD area image sensors for X-ray radiography

• CMOS area image sensors for X-ray radiography

• TDI-CCD area image sensors• Photodiode arrays with amplifier for

non-destructive inspection

31 to 34

X-ray image sensors

KMPDC0106ED

10-8

10-14 10-12 10-10 10-8 10-6 10-4

10-6 10-4 10-2 100 102

10-2

104Illuminance (lx)Irradiance (W/cm2)

High sensitivity film (ISO 1000)

NMOS/CMOS linear image sensor(S3901/S8377 series)

InGaAs linear image sensor(G9201/G9211 series)

Cooled type CCD area image sensor(S9971/S7031 series)

Non-cooled type CCD area image sensor(Large full well type: S7033 series)

Non-cooled type CCD area image sensor(S9970/S7030 series)

Example of detectable light level

3 Image sensors

KMPDB0251ED

Hamamatsu Photonics uses its original silicon/compound semiconductor process technology to manufacture image sensors that cover a wide energy and spectral range from 2.6 μm near infrared region to visible, UV, vacuum UV (VUV), soft X-ray, and even hard X-ray region. In addition, we also provide module products designed to work as driver circuits for various image sensors.

Qua

ntum

eff

icie

ncy

(%)

Wavelength (nm)

(Typ. Ta=25 ˚C)

0200 400 600 800 1000 1200

10

20

30

40

50

60

70

80

90

100

S9970/S9971series

S9972/S9973series

S10420-01series

Back-thinnedtype

Spectral response

CCD area image sensor (without window)

KMPDB0252EF

0.5

0.4

0.3

0.2

0.1

0200 400 600 800 1000 1200

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

(Ta=25 ˚C)

S8377/S8378 series

S10121 toS10124 series

CMOS linear image sensor

Image sensor

Si processtechnology

•CCD•CMOS

MEMS technology

•Back-illuminated type•Three-dimensional mounting[fi ne pitch bump bonding, TSV (through silicon via)]

Compoundsemiconductorprocess technology

•InGaAs

Image sensors 4

KMIRB0068EB

KMPDC0105EG

Note) If using an NMOS image sensor (windowless type) for X-ray direct detection, please consult our sales offi ce regarding usage conditions.

0.1 eV

InGaAsimage sensor(Long wavelength type)

1 eV10 eV100 eV1 keV10 keV100 keV

0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm

1 MeV

InGaAslinear/areaimage sensor

NMOSimage sensor

CMOS linearimage sensor

CMOS areaimage sensor

Distance image sensor

Back-thinned CCD

Photon energy

Wavelength

Front-illuminated CCD

Front-illuminated CCD (windowless type)

NMOS image sensor(windowless type)

For X-ray imaging CCD

Back-thinned CCD (windowless type)

Wavelength [nm] =1240

Photon energy [eV]

X-ray flat panel sensor

0.5 1.0 1.5 2.0 2.5 3.00

0.5

1.0

1.5

Wavelength (μm)

Phot

osen

sitiv

ity (

A/W

)

(Typ.)

G9201 to G9204/G9211 to G9214/G9494 series

G9206-256W G9207-256W

G9205-256WG9208-256W

G11135 series

Td=25 °CTd=-10 °CTd=-20 °C

KMPDB0161ED

0.5

0.4

0.3

0.2

0.1

0200 400 600 800 1000 1200

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

(Typ. Ta=25 ˚C)

S3901/S3904 series

S8380/S8381 series(infrared enhanced type)

NMOS linear image sensor InGaAs linear image sensor

Example of detectable energy level and spectral response range

5 Image sensors

CMOS technology

Image sensor technology of Hamamatsu

Hamamatsu produces CMOS image sensors that use its uniquely developed analog CMOS technology at their cores for applications

mainly aimed at measuring equipment such as analytical instruments and medical equipment. With analog and digital features that

meet market needs built into the same chip as the sensor, systems can be designed with high performance, multi-functionality, and

low cost.

· Supports photosensitive areas of various shapes (silicon/compound semiconductor, one- and two-dimensional array, large area)

· Highly functional (high-speed, partial readout, built-in A/D converter, global shutter, etc.)

· Customization for specific applicationss

This image sensor can detect distance information for the target object using the TOF (time-of-flight) method. A distance

measurement system can be configured by combining a pulse-modulated light source and a signal processing section.

It is possible to create highly functional CMOS image sensors for various applications by using CMOS technology. Here we

introduce a 2-port parallel output type as an example. As shown in the figure, a readout circuit can be incorporated on the top and

bottom of the photosensitive area, and each circuit can be operated independently. A video line for each circuit is connected to

each pixel, and the data of any pixel can be read out from either circuit. It is also possible to read out a specific region at a high

frame rate with port 1 and read out the remaining regions at a normal frame rate with port 2.

KMPDC0417EA

Target(man, object)

Light source(LED array or LED)

PC

Ethernet

Drive pulse

Evaluation circuit

Irradiation light

Reflected lightDistanceimage sensor

Light receivinglens

Distance image (distance information + image) example(near→middle→far: red→yellow→green)

Read out a specific region at a high frame rate

Read out the remaining regions at a normal frame rate

Application example in traffic information communication

Amp, ADC

Amp, ADCTiming generator

Hold 1, Horizontal control 1

Hold 2, Horizontal control 2

Photosensitive area(640 × 480 pixels)

Vert

ical

co

ntr

ol 1

, 2

Enlarged photo of chip

Example of high functionality based on CMOS technology

Distance image sensor

2-port parallel output type image sensor

Example of distance measurement diagram

2-port parallel output type image sensor

Image sensors 6

In general, CCDs are designed to receive light from the front side where circuit patterns are formed. This type of CCD is called

the front-illuminated CCD. The light input surface of front-illuminated CCDs is formed on the front surface of the silicon substrate

where a BPSG film, poly-silicon electrodes, and gate oxide film are deposited. Light entering the front surface is largely reflected

away and absorbed by those components. The quantum efficiency is therefore limited to approx. 40% at the highest in the visible

region, and there is no sensitivity in the ultraviolet region.

Back-thinned CCDs were developed to solve such problems. Back-thinned CCDs also have a BPSG fi lm, poly-silicon electrodes, and gate

oxide fi lm on the surface of the silicon substrate, but they receive light from the backside of the silicon substrate. Because of this structure,

back-thinned CCDs deliver high quantum effi ciency over a wide spectral range. Besides having high sensitivity and low noise which are the

intrinsic features of CCDs, back-thinned CCDs are also sensitive to electron beams, soft X-rays, ultraviolet, visible, and near infrared region.

Our unique photosensitive area technology provides high sensitivity in the near infrared region.

Back-thinned technology

Incident light

Poly-silicon electrode

Potential well

Gate oxide film

BPSG film

Silicon

Incident light

Poly-silicon electrode

Accumulation layer

BPSG film

Silicon

Potential well

Gate oxide film

KMPDC0179EB

KMPDC0180EB

0400 500 600 700 900800 1000 1100 1200

25

20

15

10

5

(Ta=25 °C)

Phot

osen

sitiv

ity [

TV/(

W∙s

)]

Wavelength (nm)

KMPDB0363EB

InGaAs image sensors for near infrared region employ a hybrid

structure in which the photodiode array of the photosensitive

area and CMOS signal processing circuit are implemented in

separate chips and mounted in three dimensions using bumps.

This is used when it is difficult to make the photosensitive

area and signal processing circuit monolithic. Moreover,

this construction is advantageous in that the shape of the

photosensitive area, spectral response, and the like can easily

be modified.

Hybrid technology (Three-dimensional mounting)

Back-illuminated InGaAs photodiode arrayIn bump

Front end board

ROIC (Si)

KMIRC0036EB

Near infrared-enhanced CMOS area image sensor

Back-thinned type Front-illuminated type

Imaging example of finger veins using near infrared-

enhanced CMOS area image sensor

Schematic diagram of InGaAs area image sensor using

fine-pitch bumps

Spectral response (typical example)

Schematic of CCDs

7 Image sensors

Area image sensors

Hamamatsu CCD area image sensors have extremely low noise and can acquire image signals with high S/N. Hamamatsu CCD

area image sensors use an FFT-CCD that achieves a 100% fill factor and collects light with zero loss, making them ideal for high

precision measurement such as spectrophotometry. These CCD area image sensors are available in a front-illuminated type or a

back-thinned type. The front-illuminated type detects light from the front side where circuit patterns are formed, while the back-

thinned type detects light from the rear of the Si substrate. Both types are available in various pixel sizes and formats allowing you

to select the device that best meets your applications. The rear of the back-thinned type is thinned to form an ideal photosensitive

surface delivering higher quantum efficiency over a wide spectral range.

For spectrophotometry

Achieving high quantum efficiency (at peak 90% min.) and ideal for high accuracy spectrophotometry

Type no.Pixel size

[μm (H) × μm (V)]Number of

effective pixelsFrame rate*1

(frames/s)Cooling*2 Photo

Dedicated drivercircuit*3

(P.37)

S7030-0906

24 × 24

512 × 58 316

Non-cooled C7040

S7030-0907 512 × 122 239

S7030-1006 1024 × 58 192

S7030-1007 1024 × 122 160

S7031-0906S 512 × 58 316

One-stageTE-cooled

C7041

S7031-0907S 512 × 122 239

S7031-1006S 1024 × 58 192

S7031-1007S 1024 × 122 160

*1: Full line binning*2: Two-stage TE-cooled type (S7032-1006/-1007) is available upon request (made-to-order product).*3: Sold separately

Note: Windowless type is available upon request.

Back-thinned type CCD area image sensors deliver high quan-

tum efficiency (90% or more at the peak wavelength) and have

great stability for UV region. Moreover these also feature low

noise and are therefore ideal for low-light-level detection.

Back-thinned type CCD area image sensors

Image sensors 8

Type no.Pixel size





(P.38)

S10140-1007

12 × 12

1024 × 122 160

Non-cooled C10150

S10140-1008 1024 × 250 120

S10140-1009 1024 × 506 80

S10140-1107 2048 × 122 96

S10140-1108 2048 × 250 80

S10140-1109 2048 × 506 60

S10141-1007S 1024 × 122 160

One-stageTE-cooled

C10151

S10141-1008S 1024 × 250 120

S10141-1009S 1024 × 506 80

S10141-1107S 2048 × 122 96

S10141-1108S 2048 × 250 80

S10141-1109S 2048 × 506 60

*4: Full line binning*5: Two-stage TE-cooled type (S10142 series) is available upon request (made-to-order product).*6: Sold separately


For spectrophotometry (High resolution type)

CCD area image sensors having superior low noise performance

9 Image sensors

Type no.Pixel size



(frames/s)Cooling Photo


(P.40)

S10420-1004-01

14 × 14

1024 × 16 221

Non-cooled

C11287

S10420-1006-01 1024 × 64 189

S10420-1104-01 2048 × 16 116

S10420-1106-01 2048 × 64 106

S11071-1004 1024 × 16 1777

C11288

S11071-1006 1024 × 64 751

S11071-1104 2048 × 16 1303

S11071-1106 2048 × 64 651

S11850-1106

2048 × 64

106

One-stageTE-cooled

–

S11851-1106 651

*1: Full line binning*2: Sold separately


For spectrophotometry (Low etaloning type)

Two types consisting of a high-speed type (S11071 series, S11851-1106) and low noise type (S10420-01 series, S11850-1106) are

available with improved etaloning characteristics. The S11850 and S11851-1106 have a thermoelectric cooler within the package to

minimize variations in the chip temperature during operation.

Etaloning is an interference phenomenon that occurs when

the light incident on a CCD repeatedly reflects between the

front and back surfaces of the CCD while being attenuated,

and causes alternately high and low sensitivity. When long-

wavelength light enters a back-thinned CCD, etaloning oc-

curs due to the relationship between the silicon substrate

thickness and the absorption length. The S11071/S10420

-01 series and S11850/S11851-1106 back-thinned CCDs have

achieved a significant improvement on etaloning by using a

unique structure that is unlikely to cause interference.

KMPDB0284EBWavelength (nm)

Rela

tive

sens

itivi

ty (

%)

900 1000960 980940920

(Ta=25 °C)

0

40

30

20

10

50

60

70

80

90

100

110

Previous type

Etaloning-improved type

Improved etaloning characteristic

Etaloning characteristic (typical example)

Image sensors 10

Area image sensors

Type no.Pixel size





(P.37, 40)

S11500-1007 24 × 24 1024 × 122 160

Non-cooled

C7040

S11510-1006

14 × 14

1024 × 64 189

C11287

S11510-1106 2048 × 64 106



For spectrophotometry (IR-enhanced type)

Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

These sensors have MEMS structures fabricated by our own

unique laser processing technology. These sensors have

achieved very high sensitivity in the near infrared region at

wavelengths longer than 800 nm. Utilizing high sensitiv-

ity characteristic in the near infrared region, these sensors

should find applications in Raman spectroscopy.

KMPDB0329EA

Wavelength (nm)

(Typ. Ta=25 °C)

0200 400 600 800 1000 1200

10

20

30

40

50

60

70

80

100

90

Back-thinned CCD

Front-illuminated CCD

IR-enhanced typeBack-thinned CCD

Enhanced IR sensitivity

Spectral response (without window)

11 Image sensors

Type no.Pixel size





(P.37, 38)

S7033-0907

24 × 24

512 × 122 239

Non-cooled C7043

S7033-1007 1024 × 122 160

S7034-0907S 512 × 122 239

One-stageTE-cooled

C7044

S7034-1007S 1024 × 122 160



For spectrophotometry (Large full well type)

Wide dynamic range are achieved.

Type no.Pixel size




Dedicated drivercircuit

S12071 24 × 24 1024 × 1024Tap A: 0.1Tap B: 1.5

One-stageTE-cooled

–

*3: Area scanning


For ICP spectrophotometry

This CCD area image sensor has a back-thinned structure that enables high sensitivity in the UV to visible region an well as wide

dynamic range, low dark current, and an anti-blooming function.

Type no.Pixel size





(P.38)

S7170-0909

24 × 24 512 × 512 0.9

Non-cooled C7180

S7171-0909-01One-stageTE-cooled

C7181

S9037-0902

24 × 24

512 × 4 1879

Non-cooled –

S9037-1002 1024 × 4 945

S9038-0902S 512 × 4 1879

One-stageTE-cooled

–

S9038-1002S 1024 × 4 945 –

*4: Area scanning excluding full line binning for S9037/S9038 series*5: Two-stage TE-cooled type for S7170-0909 and S7171-0909-01 is available upon request (made-to-order product).*6: Sold separately


For scientific measurement

Selectable from a line-up covering various types of high performance back-thinned CCD area image sensors such as high-speed

readout type and low noise type

Image sensors 12

Area image sensors

Type no.Pixel size


effective pixels

Thickness ofdepletion layer

(μm)Cooling Photo


S10747-0909 24 × 24 512 × 512 200 Non-cooled –

Fully-depleted CCD area image sensor

The S10747-0909 is a back-illuminated CCD area image sensor that delivers drastically improved near-infrared sensitivity by the wid-

ened depletion layer.

Back-thinned CCDs the silicon substrate is only a few dozen microns thick. This means that near-infrared light is more likely

to pass through the substrate (see Figure 1), thus resulting in a loss of quantum efficiency in infrared region. Thickening the

silicon substrate increases the quantum efficiency in the near-infrared region but also makes the resolution worse since the

generated charges diffuse into the neutral region unless a bias voltage is applied (see Figure 2). Fully-depleted back-illumi-

nated CCDs use a thick silicon substrate that has no neutral region when a bias voltage is applied and therefore deliver high

quantum efficiency in the near-infrared region while maintaining a good resolution (see Figure 3). One drawback, however, is

that the dark current becomes large so that these devices must usually be cooled to about -70 °C during use.

Structure of fully-depleted back-illuminated CCD

KMPDB0313EA

0

100

90

80

70

60

50

40

30

20

10

200 400 600 800 1000 1200

Wavelength (nm)

Qua

ntum

eff

icie

ncy

(%)

S10747-0909

Back-thinned CCD

(Typ. Ta=25 °C)

Spectral response (without window)

Depletionlayer

BIAS

Blue light Near-infrared light

Photosensitivesurface

CCDsurface

Depletionlayer

Neutralregion

Chargediffusion

GND


Photosensitivesurface

CCD surface


GNDPhotosensitivesurface

CCD side

Depletionlayer

KMPDC0332EA

Figure 1 Back-thinned CCD Figure 2 When no bias voltage is applied to thick silicon

Figure 3 When a bias voltage is applied to thick silicon (fully-depleted back-illuminated CCD)

13 Image sensors

Type no.Pixel size





(P.37)

S9970-0906

24 × 24

512 × 60 239

Non-cooled C7020

S9970-1006 1024 × 60 160

S9970-1007 1024 × 124 120

S9970-1008 1024 × 252 80

S9971-0906 512 × 60 239

One-stageTE-cooled

C7021S9971-1006 1024 × 60 160

S9971-1007 1024 × 124 120

S9971-1008 1024 × 252 80 C7025

S9972-1007*3 1024 × 124 120

Non-cooled C7020-02

S9972-1008*3 1024 × 252 80

S9973-1007*3 1024 × 124 120

One-stageTE-cooled

C7021-02

S9973-1008*3 1024 × 252 80 C7025-02

*1: Full line binning*2: Sold separately*3: Infrared enhanced type

Note: In case of ceramic package CCD (S9970/S9972 series), windowless, UV coat, and FOP coupling are available upon request (made-to-order product).

Front-illuminated type CCD area image sensors are low dark

current and low noise CCDs ideal for scientific measurement

instruments.

Front-illuminated type CCD area image sensors

For spectrophotometry

CCD area image sensors specifically designed for spectrophotometry

Image sensors 14

Area image sensors

Type no.Pixel size



(frames/s)Cooling Package Photo

Dedicated driver circuit

S9736-01

24 × 24 512 × 512 3

Non-cooled

Ceramic DIP

–

S9736-03 Plate type

S9737-01

12 × 12 1024 × 1024 1

Ceramic DIP

S9737-03 Plate type

S9978*5 24 × 24 512 × 512 3 Ceramic DIP

S9979 48 × 48 1536 × 128 15 Ceramic DIP

*4: Area scanning*5: Infrared enhanced type

Note: In case of ceramic package CCD (S9736-01/S9737-01/S9978/S9979), windowless, UV coat, and FOP coupling are available upon request (made-to-order product).

For scientific measurement

CCD area image sensors that deliver high accuracy measurement. Number of effective pixels of 512 × 512 and 1024 × 1024 are

ideal for acquiring two-dimensional imaging.

15 Image sensors

The serial/parallel interface allows partial readout setting,

global/rolling shutter switching, integration time control, gain

and offset control, and so on. It also has a built-in 12-bit A/D

converter.

The APS (active pixel sensor) type image sensor consisting of

high-sensitivity amplifiers arranged for each pixel achieves high

sensitivity in the near infrared region.

Features of the S11661, S11662

High sensitivity in the near infrared region Equipped with numerous functions

It has a built-in bias circuit and operates on a single 3.3 V power

supply input.

3.3 V single power supply operation

0400 500 600 700 900800 1000 1100 1200

25

20

15

10

5

(Ta=25 °C)

Phot

osen

sitiv

ity [

TV/(

W∙s

)]

Wavelength (nm)KMPDB0363EB

Spectral response (typical example)

S11661: 1280 × 1024 pixelsS11662: 640 × 480 pixels ( )

Photodiode array

Vert

ical

shi

ft r

egis

ter

(S11

661:

106

4 lin

es, S

1166

2: 5

20 lin

es)

Boos

ter

circ

uit

Timing generator

Horizontal shift register(S11661: 1320 lines, S11662: 680 lines)

CDS circuit(S11661: 1320 lines, S11662: 680 lines)

Serial/parallelinterface

MCLKAll_reset(MST)

SPI_resetSPI_dataSPI_clkSPI_enable

Amplifier

Bias circuit

12-bitA/D converter Vsync

Dout [11-0]

Hsync

Pclk

12

KMPDC0409EA

Block diagram

Type no.Pixel size


effective pixelsFrame rate(frames/s)

Package PhotoDedicated driver

circuit

S11661

7.4 × 7.4

1280 × 1024 8

Ceramic –

S11662 640 × 480 30

These are APS type CMOS area image sensors with high sensi-

tivity in the near infrared region. The S11661 is an SXGA format

type, and the S11662 is a VGA format type.

CMOS area image sensors

Image sensors 16


KMPDC0121EC

FDA

Vss

VISH

VSTG

VREGH

VREGL

VIG VSG VOG VRET VRD VOD VRG

Shift clock(2-phase)

All resetgate

All resetdrain

VideoAnalog shift register

Transfergate

st

1

2

Vss

Start

Clock

Clock

Activephotodiode

Saturationcontrol gateSaturationcontrol drain

Dummy diode

Dummy video

Active video

End of scanDigital shift register

Vdd Vss

Digital shift register

Hold circuitTim

ing

gene

rato

rStart

ClockVideo

KMPDC0020EC

KMPDC0352EA

CMOS linear image sensor (S9227-03)

NMOS linear image sensor (S3901 series)

CCD linear image sensor (S11155/S11156-2048-01)

Equivalent circuits

CMOS linear image sensors are widely used in spectrophotometry

and industrial measurement applications thanks to innovations

in CMOS technology that have increased the integrated circuit

density making CMOS linear image sensors easier to use and

available at a reasonable cost. All essential signal-processing

circuits are formed on the sensor chip.

CCD linear image sensors (back-thinned type) have high UV

sensitivity ideal for spectrophotometry. They also have low

noise, low dark current and wide dynamic range, allowing low-

light-level detection by making the integration time longer.

NMOS linear image sensors feature large charge accumulation

and high output linearity making them ideal for scientific measurement instruments that require high accuracy. Output charge can

be converted into voltage by an external readout circuit.

Both NMOS and CMOS linear image sensors are capable of handling a larger charge than CCD image sensors and so can be used

at higher light levels.

17 Image sensors

Features of the S11639

For the photosensitive area, a buried photodiode structure is

employed to reduce the dark current and shot noise in the

dark state. Moreover, the photosensitive area features highly

sensitive vertically long pixels but with low image lag, based

on our original photosensitive area formation technology. In

addition, high sensitivity is also provided for UV light.

It operates on a single 5 V power supply and two types of

external clock pulses. Since the input terminal capacitance of

the clock pin is 5 pF, the image sensor can easily be operated

with a simple external circuit. The video output is positive

polarity. This product generates a readout timing trigger signal,

which can be used to perform signal processing.

High sensitivity in the UV to near infrared region Easy-to-operate

These are CMOS linear image sensors suitable for spectropho-

tometry.

CMOS linear image sensors for spectrophotometry

High sensitivity type

The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (14 × 200 μm).

Other features include high sensitivity and high resistance in the UV region.

Type no.Pixel height

(μm)Pixel pitch

(μm)Number of pixels

Line rate(frames/s)

PhotoDedicated driver

circuit

S11639 200 14 2048 4672 -

Spectral response (typical example) Output waveform of one pixel

KMPDB0394EAWavelength (nm)

Rela

tive

sens

itivi

ty (

%)

200 400 500 700300 600 800 900 10000

20

40

60

80

100 (Ta=25 °C)

GND

f(CLK)=VR=10 MHz

GND

0.5 V (output offset voltage)

2.5 V (saturation output voltage=2 V)

GND

CLK

Trig

Video

5 V/div.

5 V/div.

1 V/div.

20 ns/div.

APS (active pixel sensor) type Electronic shutter, simultaneous charge integration for all pixels

This APS type image sensor consists of high-sensit ivity

amplifiers arranged for each pixel. It provides a high charge-to-

voltage conversion efficiency of 25 μV/e-, which is higher than

that of CCDs.

The image sensor incorporates an electronic shutter function

that can be used to control the start timing and length of the

integration time in sync with an external clock pulse. The signals

of all pixels are transferred to a hold capacity circuit where each

pixel is read out one by one.

Image sensors 18

KMPDB0399EA KMPDB0400EA

0.2

0.3

200 600 1000400 800 1200

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

0

0.4

0.1

(Ta=25 °C)

0.04

0.06

0.08

200 220 240 260 280 300

Wavelength (nm)

Phot

osen

sitiv

ity (

A/W

)

0

0.1

0.02

(Ta=25 °C)

S10121 to S10124 series

Convensional productS10111 to S10114 series

Type no. Pixel height

(mm)

Pixel pitch

(μm)Number of pixels Line rate

(frames/s)Photo


(P.42)

S10121-128Q

2.5

50

128 1923

C10808 series

S10121-256Q 256 969

S10121-512Q 512 486

S10122-128Q

0.5

128 3846

S10122-256Q 256 1938

S10122-512Q 512 972

S10123-256Q

0.5

25

256 1938

S10123-512Q 512 972

S10123-1024Q 1024 487

S10124-256Q

2.5

256 969

S10124-512Q 512 486

S10124-1024Q 1024 243

*1: Sold separately

Variable integration time type

These current output type linear image sensors have a variable integration time function and spectralresponse characteristics with

high UV sensitivity. The S10121 to S10124 series also features smoothly varying spectral response characteristics in UV region.


Spectral response (typical example) Spectral response in UV region (typical example)

19 Image sensors


(μm)

Pixel pitch


(frames/s)Photo


(P.42)

S8377-128Q

500

50

128 3846

C9001

S8377-256Q 256 1938

S8377-512Q 512 972

S8378-256Q

25

256 1938

S8378-512Q 512 972

S8378-1024Q 1024 487

S9226-03

125 7.8 1024 194 –

S9226-04

S9227-03

250 12.5 512 9434 –

S9227-04

*1: Sold separately

Standard type

CMOS linear image sensors with internal readout circuit

Image sensors 20


Type no. Pixel size

(μm)

Pixel pitch


(frames/s)Photo


(P.40)

S11155-2048-01 14 × 500

14 2048 2254 C11165-01

S11156-2048-01 14 × 1000

*2: Sold separately


The back-thinned type is CCD linear image sensors developed

for spectrophotometers and feature high UV sensitivity and an

internal electronic shutter.

The front-illuminated type offers high sensitivity in the ultravio-

let region (200 nm) nearly equal to back-thinned CCD, despite a

front-illuminated CCD.

CCD linear image sensors for spectrophotometry

Back-thinned type

The S11155-2048 and S11156-2048 are back-thinned CCD linear image sensors with an internalelectronic shutter for spectrometers.

Type no. Pixel size

(μm)

Pixel pitch


Line rate

(frames/s)Photo


(P.40)

S11151-2048 14 × 200 14 2048 484 C11160

*3: Sold separately

Front-illuminated type

The S11151-2048 is a front-illuminated CCD linear image sensor with high sensitivity and high resistance to UV light.

21 Image sensors


(μm)

Pixel pitch

(μm)Number of pixels Cooling Photo


(P.39, 41)

S3901 series 2.5 50

128, 256, 512

Non-cooled

C7884 seriesC8892

1024 –

S3902 series

0.5

50 128, 256, 512

C7884 seriesC8892

S3903 series 25 256, 512, 1024

S3904 series

2.5

25

256, 512, 1024

2048 –

S5930 series 50 256, 512One-stageTE-cooled

C5964 series(Built in sensor)

S5931 series 25 512, 1024

NMOS linear image sensors are self-scanning photodiode arrays de-

signed specifically for detectors used in multichannel spectroscopy.

These image sensors feature a large photosensitive area, high UV

sensitivity and little sensitivity degradation with UV exposure, wide dy-

namic range due to low dark current and high saturation charge, supe-

rior output linearity and uniformity, and also low power consumption.

NMOS linear image sensors for spectrophotometry

Current output type (Standard type)

NMOS linear image sensors offering excellent output linearity and ideal for spectrophotometry


(mm)

Pixel pitch



(P.39, 41)

S8380 series

2.5

50 128, 256, 512Non-cooled

C7884 seriesC8892

S8381 series 25 256, 512, 1024

S8382 series 50 256, 512One-stageTE-cooled

C5964 series(Built-in sensor)

S8383 series 25 512, 1024

Current output type (Infrared enhanced type)

NMOS linear image sensors having high sensitivity in near infrared region


(mm)

Pixel pitch



S3921 series 2.550 128, 256, 512

Non-cooled –S3922 series 0.5

S3923 series 0.525 256, 512, 1024

S3924 series 2.5

*1: Sold separately

Voltage output type

These voltage output sensors need only a simple design circuit for read-out compared to the current output type.

Image sensors 22


These are CCD linear image sensors suitable for industry.

CCD linear image sensors for industry

Type no.Pixel size


effective pixelsNumber of

portsPixel rate

(MHz/port)Line rate

(kHz)Verticaltransfer

PhotoApplicable*2

camera

S10200-02-01

12 × 12

1024 × 128 2

30

50

Bi-directional

-

S10201-04-01 2048 × 128 4 C10000-801

S10202-08-01 4096 × 128 8 -

S10202-16-01 4096 × 128 16 100 -

*2: Sold separately

The C10000 series cameras are products manufactured by Hamamatsu Photonics, System Division.

TDI-CCD image sensor

TDI-CCD captures clear, bright images even under low-light-level conditions during high-speed imaging. During TDI mode, the CCD

captures an image of a moving object while transferring integrated signal charges synchronously with the object movement. This

operation mode drastically boosts sensitivity to high levels even when capturing fast moving objects. Our new TDI-CCD uses a

back-thinned structure to achieve even higher quantum efficiency over a wide spectral range from the UV to the near IR region (200

to 1100 nm).

In FFT-CCD, signal charges in each line are vertically trans-

ferred during charge readout. TDI mode synchronizes this

vertical transfer timing with the movement timing of the

object incident on the CCD, so that signal charges are in-

tegrated a number of times equal to the number of vertical

stages of the CCD pixels.

KMPDC0139EA

Time1 Time2 Time3

Sign

al t

rans

fer

·O

bjec

t m

ovem

ent

Char

ge

First stage·····

Last stage M

TDI (Time Delay Integration) mode

23 Image sensors

KMPDB0268EB

KMPDC0260EA

Wavelength (nm)

Phot

osen

sitiv

ity (

V/μJ

· c

m2 )

0

1000

2000

3000

4000

5000

200 400 600 900800 1000300 500 700 1100

7000

6000

(Typ. Ta=25 °C)

TGbP3VP2VP1VTGa

RG

RD

OD

AG

ND

OG

SG

P2H

P1H

OSa

1

OSa

2

OSb

1

OSb

2

OSa

3O

Sb3

OSa

4O

Sb4

OFDOFG

DGND

B port side

512 pixels

A port side

Bidirectional transfer12

8 pixe

ls

The back-thinned (back-illuminated) structure ensures higher

sensitivity than front-illuminated types in the UV through the

near IR region (200 to 1100 nm).

Using multiple amplifiers (multiple output ports) permits paral-

lel image readout at a fast line rate.

Type no.Pixel size


effective pixelsNumber of port

Pixel rate(MHz/port)

Line rate(kHz)


circuit

S12551-2048 14 × 14 2048 × 1 1 40 19 –

S12379 8 × 8 2048 × 1 4 40 72 –

Front-illuminated type

These are front-illuminated type CCD linear image sensors with high-speed line rate designed for applications such as sorting machine.

Spectral response (without window) Configuration (S10201-04-01)

Image sensors 24



(μm)Pixel pitch


Line rate(frames/s)


circuit

S10226-10 125 7.8 1024 194

–

S10227-10 250 12.5 512 9434

S11106-10 63.5 63.5 128 64935

–

S11107-10 127 127 64 111111

S12443 125 7 2496 3924 –

CMOS linear image sensors incorporate a timing circuit and sig-

nal processing amplifiers integrated on the same chip, and op-

erate from simple input pulses and a single power supply. Thus

the external circuit can be simplified.

CMOS linear image sensors for industry

Resin-sealed type package

These are CMOS linear image sensors of small and surface mounted type suited for mass production.

25 Image sensors


(mm)Pixel pitch


Line rate(frames/s)


circuit

S10453-512Q

0.5 25

512 18867

–

S10453-1024Q 1024 9596

S11105

0.25 12.5 512 88495 –

S11105-01


(μm)Pixel pitch


Line rate(frames/s)


circuit

S11108 14 14 2048 4672

–

S12706 7 7 4096 2387


(μm)Pixel pitch


Line rate(frames/s)


circuit

S10077 50 14 1024 972 –

High-speed readout type

High sensitivity type

Digital output type

These are CMOS linear image sensors with simultaneous charge integration and variable integration time function that allow high-

speed readout: 10 MHz (S10453-512Q/-1024Q), 50 MHz (S11105/-01).

CMOS linear image sensors that achieve high sensitivity by adding an amplifier to each pixel.

CMOS linear image sensor with internal 8-bit/10-bit AD converter

Image sensors 26

Driver circuits for photodiode arrays with amplifier

Photodiode arrays with amplifier

Photodiode arrays with amplifier are a type of CMOS image

sensor designed mainly for long area detection systems using

an equal-magnification optical system. This sensor has two

chips consisting of a photodiode array chip for light detection

and a CMOS chip for signal processing and readout. A long,

narrow image sensor can be configured by arranging multiple

arrays in a row.

1

4

Reset

EXTSP Vms Vdd GND

CLK

Vref

Vgain

Vpd

2

10

11

12

5 6 7

Timing generator

Shift register

Hold circuit

Charge amp array

Photodiode array

3 TRIG

8 EOS

9 Video

1 2 3 4 5 N-1 N

CMOS signal processing chip

Photodiode array chip Board


(mm)Pixel pitch

(mm)Number of pixels

Line rate(frames/s)


circuit*1

S11865-64 0.8 0.8 64 14678C9118C9118-01

S11865-128 0.6 0.4 128 7568

S11865-256 0.3 0.2 256 3844 -

S11865-64-02 1.6 1.6 64 14678C9118C9118-01

S11865-128-02 0.8 0.8 128 7568

*1: Sold separately

Type no. Features Connection Photo Suitable sensor

C9118Single power supply (+5 V)Operation with two input signals (M-CLK and M-RESET)

For single/parallelconnection

S11865-64S11865-64GS11865-128S11865-128GS11866-64-02S11865-64G-02S11866-128-02S11866-128G-02

C9118-01For serial

connection

Long and narrow area type

Linear image sensors designed for industrial inspection

KMPDC0186EA

KMPDC0153EA

Structure figure (S11865-64/-128) Block diagram (S11865-64/-128)

27 Image sensors

Distance image sensors


(μm)Pixel pitch


Video data rate(MHz)


circuit

S11962-01CR 40 40 64 × 64

10 –

S11963-01CR 30 30 160 × 120


(μm)Pixel pitch


Video data rate(MHz)


circuit

S11961-01CR 50 20 256 5 –

These distance image sensors are designed to measure the dis-

tance to an object by TOF method. When used in combination

with a pulse modulated light source, these sensors output phase

difference information on the timing that the light is emitted and

received. The sensor output signals are arithmetically processed by

an external signal processing circuit or a PC to obtain distance data.

Distance linear image sensor

Distance area image sensor

KMPDC0417EA

Target(man, object)

Light source(LED array or LED)

PC

Ethernet

Drive pulse

Evaluation circuit

Irradiation light

Reflected lightDistanceimage sensor

Light receivinglens

Example of distance measurement diagram

Image sensors 28


InGaAs image sensors are designed for a wide range of

applications in the near infrared region. Built- in CMOS IC

readout circuit allows easy signal processing. These image

sensors use a charge amplifier mode that provides a large

output signal by integrating the charge, making them ideal for

low-light-level detection.

KMIRC0016EBKMIRB0068EB


(μm)Pixel pitch

(μm)Number of

pixelsLine rate (lines/s)

Spectral responese range

(μm)Cooling Photo


(P.39)

G9201-256S

250

50 256 1910

0.9 to 1.67(-10 °C)

One-stageTE-cooled

C8061-01

G9202-512S 25 512 970*2

G9203-256D

500

50 256 1910

0.9 to 1.7(25 °C)

Non-cooled –

G9203-256S0.9 to 1.67

(-10 °C)One-stageTE-cooled

C8061-01

G9204-512D

25 512 970*2

0.9 to 1.7(25 °C)

Non-cooled –

G9204-512S0.9 to 1.67


C8061-01

*1: Sold separately*2: When two video lines are used for readout, the line rate is equal to that for 256 channels.

Clock

Vdd

Vref

INP

Vss

ResetDigital shift register

Signal processing circuit

Videoline

Si

Chargeamplifier

Wirebonding

PhotodiodeInGaAs

InGaAs linear image sensors for DWDM monitor

These InGaAs image sensors are developed for DWDM (Dense Wavelength Division Multiplexing) monitors in optical fiber commu-

nications.

0.5 1.0 1.5 2.0 2.5 3.00

0.5

1.0

1.5

Wavelength (μm)

Phot

osen

sitiv

ity (

A/W

)

(Typ.)

G9201 to G9204/G9211 to G9214/G9494 series

G9206-256W G9207-256W

G9205-256WG9208-256W

G11135 series

Td=25 °CTd=-10 °CTd=-20 °C

Equivalent circuit (InGaAs linear image sensor) Spectral response

29 Image sensors


(μm)Pixel pitch

(μm)Number of



(μm)Cooling Photo


(P.39, 43)

G9211-256S

250

50 256 1910

0.9 to 1.67(-10 °C)

One-stageTE-cooled

C8061-01

G9212-512S 25 512 960*2

G9213-256S

500

50 256 1910

G9214-512S 25 512 960*2

G9205-256W

250

50 256 19100.9 to 1.85

(-20 °C)

Two-stageTE-cooled

C8062-01

G9205-512W 25 512 960*2

G9206-0250 256 1910

0.9 to 2.15(-20 °C)

G9206-256W0.9 to 2.05

(-20 °C)

G9206-512W 25 512 960*2 0.9 to 2.15(-20 °C)

G9207-256W 50 256 19100.9 to 2.25

(-20 °C)

G9208-256W 50 256 19100.9 to 2.55

(-20 °C)G9208-512W 25 512 960*2

G11620-256DA

500

50 256 17200

0.95 to 1.7(25 °C)

Non-cooled

C11513

G11620-256SA0.95 to 1.67


G11620-512DA

25 512 9150

0.95 to 1.7(25 °C)

Non-cooled

G11620-512SA0.95 to 1.67



(μm)Pixel pitch

(μm)Number of



(μm)Cooling Photo


(P.39, 43)

G9494-256D 50 50 256 7100

0.9 to 1.7(25 °C)

Non-cooled

C10820

G9494-512D 25 25 512 3720*2

G10768-1024D 100

25 1024 39000 C10854

G10768-1024DB 25

G11135-256DD 50 50 256 14000

0.95 to 1.7(25 °C)

C11514

G11135-512DE 25 25 512 8150

*1: Sold separately*2: When two video lines are used for readout, the line rate is equal to that for 256 channels.

InGaAs linear image sensors for NIR spectrometry

InGaAs linear image sensors are ideal for near-infrared spectrophotometry. The G11135/G11620 series employ a back-illuminated

structure and so enable a single video line.

Image sensors 30


(μm)Pixel pitch

(μm)Number of

pixelsFrame rate*3

(frames/s)


(μm)Cooling Photo


(P.39)

G11097-0606S

50 50

64 × 64 1025

0.95 to 1.7(25 °C)

One-stageTE-cooled

C11512

G11097-0707S 128 × 128 279 C11512-01

G12460-0606S 50 50 64 × 64 10251.12 to 1.9

(25 °C)C11512

G12242-0707W 20 20 128 × 128 2580.95 to 1.7

(25 °C)Two-stageTE-cooled

C11512-02

*3: Integration time 1 μs (min.)*4: Sold separately

InGaAs area image sensor

The InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and

back-illuminated InGaAs photodiodes.


Block diagram (G11097-0606S/-0707S, G12460-0606S)

A sequence of operation of the readout circuit is de-

scribed below.

In the readout circuit, the charge amplifier output voltage

is sampled and held simultaneously at all pixels during

the integration time determined by the low period of the

master start pulse (MSP) which is as a frame scan signal.

Then the pixels are scanned and their video signals are

output.

Pixel scanning starts from the starting point at the upper

left in the right figure. The vertical shift register scans

from top to bottom in the right figure while sequentially

selecting each row.

For each pixel on the selected row, the following opera-

tions are per-formed:

Transfers the sampled and held optical signal informa-

tion to the signal processing circuit as a signal voltage.

Resets the amplifier in each pixel after having trans-

ferred the signal voltage and transfers the reset volt-

age to the signal processing circuit.

The signal processing circuit samples and holds the

signal voltage and reset voltage .

The horizontal shift register scans from left to right in

the right figure, and the voltage difference between

and is calculated in the offset compensation circuit.

This eliminates the amplifier offset voltage in each pix-

el. The voltage difference between and is output

as the output signal in the form of serial data.

KMIRC0067EA

VIDEOSh

ift r

egis

ter

Shift register

Start

End

Signal processing circuit

64 × 64 pixels(G11097-0606S, G12460-0606S)

128 × 128 pixels(G11097-0707S)

Offset compensation

circuit

The vertical shift register then selects the next row and repeats

the operations from to . After the vertical shift register ad-

vances to the 64th row (G11097-0606S, G12460-0606S) or 128th

(S11097-0707S), the MSP, which is a frame scan signal, goes

low. After that, when the MSP goes high and then low, the reset

switches for all pixels are simultaneously released and the next

frame integration begins.

31 Image sensors

taken with S10810-11

taken with S8658-01 taken with S7199-01

X-ray image examples

X-ray image sensors

Image sensors and photodiode arrays deliver high quality X-ray

images by coupling FOS (fiber optics plate coated with X-ray

scintillator) and phosphor sheet.

Image sensors 32

Type no. ScintillatorPixel size



(frames/s)Photo


S8980

CsI(+ FOP)

20 × 20

1500 × 1000

2 –

S10810-11 1C9266-03C9266-04

S10814

1700 × 1200

1 –

S10811-11 1 (max.)C9266-03C9266-04

S8984-02 Without scintillator*2 1 –

*1: Area scanning*2: Coupled with FOP

KACCC0306EC

PC (Windows XP/7) CCD signal processingmodule

CCD area image sensor

USB cable

CCD area image sensors for X-ray radiography

CCD image sensors with large photosensitive area and high resolution are used in X-ray radiography.

CCD signal processing module

Signal processing circuit for X-ray CCD area image sensors. Easy to use only connecting to a PC.

The C9226-03 has a BNC connector for external trigger input.

Type no. Signal frequency Interface Photo Suitable sensor

C9266-03

1 MHz USB 2.0S10810-11S10811-11

C9266-04

Connection example

33 Image sensors

KMPDC0448EA

114 pixels 114 pixelsUpper light-shielded pixels(766, 768, 770 pixels)

114

pixe

ls

1500

pix

els

Monitor photodiode all around effective pixels

Lower light-shielded pixels(1000 × 3 pixels)

Effective pixels(1000 × 1500 pixels)

Horizontal shift registerscanning direction

Vertical shift registerscanning direction

269 pixels 269 pixelsUpper light-shielded pixels(756, 758, 760 pixels)

269

pixe

ls

1700

pix

els

Monitor photodiode all around effective pixels

Lower light-shielded pixels(1300 × 3 pixels)

Effective pixels(1300 × 1700 pixels)

Horizontal shift registerscanning direction

Vertical shift registerscanning direction



effective pixelsFrame rate(frames/s)


circuit

S10830

CsI(+ FOP)

20 × 20

1000 × 1500 0.9

–

S10834

S10831

1300 × 1700 0.6

S10835




(frames/s)Photo


S7199-01*1

CsI(+ FOP)

48 × 48

1536 × 128(2-chip buttable)

15

–

S8658-01*1 1536 × 128(3-chip buttable)

–

*1: The types coupling FOP (S7199-01F, S8658-01F) are provided.*2: Area scanning

CMOS area image sensors for X-ray radiography

TDI-CCD area image sensors

CMOS image sensors with large photosensitive area and high resolution are used in X-ray radiography.

These CCDs are long and narrow type FFT-CCD area image sensors coupling FOS. CCD chips are linearly arranged in close

proximity to form a long and narrow sensor format. They are used for X-ray radiography or non-destructive inspection.

S10830, S10834 S10831, S10835

Photosensitive area

KMPDC0449EA

Image sensors 34

X-ray image sensors

C9118

CN2 External controller

Scandirection

C9118


Scandirection

S11865/S11866 series


S11865/S11866 series C9118


Scandirection

C9118-01


Accessorycable

C9118-01

CN2



S11865/S11866 series C9118-01

CN2

CN3

CN3

CN3

Scandirection

Type no. Scintillator Pixel height(mm)

Pixel pitch(mm)

Number ofpixels

Line rate(lines/s) Photo Dedicated driver

circuit*3

S11865-64G

Phosphorscreen

0.8 0.8 64 14678C9118C9118-01

S11865-128G 0.6 0.4 128 7568

S11865-256G 0.3 0.2 256 3844 -

S11866-64G-02 1.6 1.6 64 14678C9118C9118-01

S11866-128G-02 0.8 0.8 128 7568

*3: Sold separately

Type no. Features Connection Photo Suitable sensor

C9118

Single power supply (+5 V)Operation with two input signals (M-CLK and M-RESET)

For single/parallelconnection

S11865-64S11865-64GS11865-128S11865-128GS11866-64-02S11866-64G-02S11866-128-02S11866-128G-02

C9118-01 For serialconnection

KACCC0644EA

KACCC0645EA

Simultaneous integration/output(effective for high-speed processing)

Simultaneous integration/serial output(Simplifies external processing circuit)

Photodiode arrays with amplifier for non-destructive inspection

Photodiode arrays with amplifier having phosphor sheet affixed on the photosensitive area are allowed for non-destructive inspection

Single or parallel readout example (C9118) Cascade readout example (C9118-01)

Connection examples

Driver circuits for photodiode arrays with amplifier

35 Image sensors

X-ray flat panel sensors

Flat panel sensors are digital X- ray image sensors newly

developed as key devices for rotational radiography (CT )

and other real-time X-ray imaging applications requiring high

sensitivity and high image quality. Flat panel sensors consist of

a sensor board and a control board, both assembled in a thin,

flat and compact configuration.

Type no.Scanmode

OutputNumber of

pixels[(H) × (V)]

Number ofeffective pixels

[(H) × (V)]

Pixel size(μm)

Frame rate(frames/s)

Resolution(line pairs/

mm)Photo

C10900D*1

Fastmode Digital

(13-bit)624 × 624

608 × 616

200

35

2.5Partialmode

608 × 310 70

Finemode Digital

(12-bit)1248 × 1248

1216 × 1232

100

17

4.5Panoramic

mode1216 × 72 280

C10901D*1

Fastmode

Digital(13-bit)

504 × 341 496 × 336 200 60 2.5

Finemode Digital

(12-bit)1008 × 682

992 × 672

100

30

4.5Panoramic

mode992 × 72 265

C10500D-03*1 –Digital(14-bit)

1512 × 60 1480 × 60 100 300 4.5

*1: LVDS interface. Gigabit Ethernet type is also available.

Type no. OutputNumber of

pixels[(H) × (V)]

Pixel size(μm)

Frame rate*2

(frames/s)Resolution

(line pairs/mm)Interface Photo

C7942CK-22Digital(12-bit)

2400 × 2400

50

2 8RS-422

(differential)

C9730DK-10

Digital(14-bit)

1056 × 1056 4 10

USB 2.0

C9732DK-11 2400 × 2400 1 10

*2: Single operation

For radiography (rotational type)

For radiography (biochemical imaging)

These are flat panel sensors for high-speed operation.

These are flat panel sensors for low energy X-ray.

Image sensors 36

Type no. OutputNumber of pixels

[(H) × (V)]Pixel size

(μm)Frame rate(frames/s)

Resolution (line pairs/mm)

Interface Photo

C9728DK-10Digital(14-bit)

1056 × 1056 50 3 80 USB 2.0

KACCC0269EB

Video outputVsync, Hsync,Pclk

Binning(bin0, bin1)IntExtExtTrgGrb

X-ray source

Framegrabber

Monitor

PC/AT

(Rear view)

Flat panel sensor

ExtTrgLemo

OS +Acquisition software

Voltage source[A.vdd, D.vdd, v (±7.5)]

MOS Image Sensor for X-Ray

Low noise type

C9728DK-10 features low noise for application where diffraction is critical.

Connection example of flat panel sensors (Interface: LVDS, RS-422)

Hornet (taken with flat panel sensor for general X-ray application) Fish (taken with radiology type flat panel sensor)

X-ray image examples

37 Image sensors

For front-illuminated type CCD area image sensors

Type no. Output Photo Applicable sensor

C7020

Analog

S9970 series

Sold separately

C7020-02 S9972 series

C7021 S9971-0906/-1006/-1007

C7021-02 S9973-1007

C7025 S9971-1008

C7025-02 S9973-1008

For back-thinned type CCD area image sensors (1)


C7040

Analog

S7030 series, S11500-1007

Sold separatelyC7041 S7031 series

C7043 S7033 series

Note: Multichannel detector heads for two-stage TE-cooled type CCD area image sensors (Back-thinned type) are also available upon request (made-to-order product).


Image sensors have excellent performance characteristics, but

more sophisticated electronics and signal processing are re-

quired for driving image sensors than when using single-element

devices. To make it easier to use image sensors, HAMAMATSU

provides multichannel detector heads designed for CCD/NMOS/

InGaAs image sensors. These multichannel detector heads oper-

ate with the dedicated controller or software for easy data ac-

quisition and sensor evaluation and, can extract full performance from image sensors when installed in a measurement system.

Multichannel detector heads

Image sensors 38


C7044

Analog

S7034 series

Sold separately

C7180 S7170-0909

C7181 S7171-0909-01

C10150 S10140 series

C10151 S10141 series

Note: Multichannel detector heads for two-stage TE-cooled type CCD area image sensors (Back-thinned type) are also available upon request (made-to-order product).

KACCC0402EC

AC cable (100 to 240 V; included with C7557-01)

PC [Windows 7 (32-bit)]C7557-01

USB cable(included with C7557-01)

Image sensor+

Multichanneldetector head

(USB 2.0)

Shutter*timing pulse

Dedicated cable(included with C7557-01)

* Shutter, etc. are not available

Trig.

TE CONTROL I/O

SIGNAL I/O

POWER

· USB cable

· Fuse (2.5 A)

· Detector head connection cables

· AC cable

· Software [Compatible OS: Windows 7 (32-bit only)]

· Operation manual

· MOS adapter

Accessories

Connection examples (C7557-01)

Type no. Interface Photo Applicable multichannel detector head

C7557-01 USB 2.0C7020/-02, C7021/-02, C7025/-02, C7040, C7041, C7043, C7044

C7180, C7181, C8061-01, C8062-01, C10150, C10151C5964 series, C8892

Supports main multichannel detector heads designed to use a CCD image sensor or NMOS/InGaAs linear image sensor

Multichannel detector head controller

39 Image sensors


C5964 series

Analog

S5930/S5931/S8382/S8383 series Built in sensor

C8892S3901 to S3904/S8380/S8381 series

(excluding S3901-1024Q and S3904-2048Q)Sold separately

Note: Controller for multichannel detector head is available. Refer to page 38 for details.


C10854 CameraLinkG10768-1024D

G10768-1024DB

Sold separatelyC8061-01

Analog

G9201/G9203/G9211/G9213-256S G9202/G9204/G9212/G9214-512S

C8062-01 G9205/G9206/G9207/G9208-256W

Note: Controller for multichannel detector head is available. Refer to page 38 for details.


C11512

CameraLink

G11097-0606S

Sold separately

C11512-01 G11097-0707S

For NMOS linear image sensors

For InGaAs linear image sensors

For InGaAs area image sensors

Image sensors 40

Driver circuits and pulse generators designed for image sensors

are available.

Circuits for image sensors


KACCC0526EBKACCC0509EB

PC

Pulse generator

Laser

Mechanical shutter

C11287

USB 2.0

PC

Pulse generator

Laser

Mechanical shutter

C11288, C11165-01

USB 2.0

DC +5 V

Type no. Signal frequency Interface Photo Applicable sensor

C11287 250 kHz

USB 2.0

S10420-01 seriesS11510 series

Soldseparately

C11288 4 MHz S11071 series

C11165-01 6 MHzS11155-2048-01S11156-2048-01

C11160 1 MHz S11151-2048

KACCC0669EA

PC

Pulse generator

Laser

Mechanical shutter

C11160

USB 2.0

Driver circuits for CCD image sensors

C11287

C11160

C11288, C11165-01

Connection examples

41 Image sensors

Type no. Feature Photo Applicable sensor

C7884 High-precision driver circuit

S3901 to S3904 seriesS8380/S8381 series(excluding S3901-1024Q andS3904-2048Q)

C7884G A dedicated pulse generator is pre-mounted on C7884.

C7884-01 Low noise driver circuit

C7884G-01 A dedicated pulse generator is pre-mounted on C7884-01.

KACCC0302EAKACCC0301EA

Powersupply

EXT TRIG

InputGND

GND

Oscilloscope

A/D conversion

NMOSlinearimagesensor

D. GNDCLKD. GND

VideoA. GND

AD. TRIGD. GND

A. GND+12 V (+15 V)

-12 V (-15 V)

StartPulse

generator

Trigger inputGND

Analog inputGND

Powersupply

EXT TRIG

InputGND

GND

Oscilloscope

A/D conversion

NMOSlinearimagesensor

VideoA. GND

AD. TRIGD. GND

StartD. GND

Trigger inputGND

Analog inputGND

A. GND+12 V (+15 V)

-12 V (-15 V)

Driver circuits for NMOS linear image sensors (Current output type)

C7884, C7884-01 C7884G, C7884G-01

Connection examples

Image sensors 42

MStart

C10808 series

MCLK

START-EX

CLK-EX

EXT-INT

INT-SEL

+5V

PLD

CN4

CN3

Pulsegenerator

CMOS

line

ar im

age

sens

orSTCLKINT

Type no. Feature Photo Applicable driver circuit

C8225-01Master start interval: 1 μs to 50 s (1→2→5 sequense)Master clock frequency: 62.5 kHz to 32 MHz

C7884 series

KACCC0305EA


C9001Single power supply (+5 V)Operation with two input signals (clock and start)

S8377/S8378 series

C10808 seriesWith variable integration time functionHigh-speed readout type (C10808) and low noise type(C10808-01) are available.

S10121 to S10124 series

KACCC0561EA

KACCC0294EA

Image sensordriver circuit

Powersupply

MSt. D. GND D. GND D. GND+5 V

CLK ST

125

MCLK

A/Dconversion

Powersupply

Controller

Vcc

GND

StartCMOSlinearimagesensor

CLK

Gain

EOS

Video

A. GND

Pulse generator for NMOS linear image sensor driver circuits

Driver circuits for CMOS linear image sensors


C9001 C10808 series

Connection example

Connection example (C8225-01)

43 Image sensors


C10820 High gain setting suitable for low-level-lightG9494-256DG9494-512D

C11513 USB 2.0 interface (USB bus power) G11620 series

C11514 CameraLink G11135 series

KACCC0499EA

1

9

2

10

3

11

4

12

5

13

6

14

7

15

8

NC

Signal name

I/O connector: D-sub 15-pin type

Pin no.

A.GND

VIDEO DATA

CH. 1

A.GND

+15 V

NC

-15 V

D.GND

+5 V

D.GND

START

D.GND

M-CLK

TRIGGER

EOS

A.GND

+15 V

-15 V

+5 V

D.GND

+5 V

D.GND

Start

D.GND

CLK

A/D TRIG

D.GNDData processing board/PC

Pulse generatorC8225-01made by HAMAMATSU

Ex: PW18-1Tmade by TEXIO CORPORATION

Oscilloscope

VIDEO

GND

EXT. TRIG

Coaxial cable

Driver circuit for InGaAs linear image sensors

Connection example (C10820)

Copies of the full warranty can be obtained prior to the purchase of products by contacting your local Hamamatsu sales office.

Hamamatsu makes no other warranties, and any and all implied warranties of merchantability, or fitness for a particular purpose,

are hereby disclaimed. The customer is responsible for use of the product in accordance with Hamamatsu's instructions and

within the operating specifications and ratings listed in this catalogue. Hamamatsu shall not be responsible for the customer's

improper selection of a product for a particular application or otherwise. No warranty will apply if the products are in any way

altered or modified after delivery by Hamamatsu or for any intentional misuse or abuse of the products. Proper design safety

rules should be followed when incorporating these products into devices that could potentially cause bodily injury.

Hamamatsu's liability on any claim for loss or damage arising out of the supplying of any products, whether based on contract,

warranty, tort (including negligence and for property damage or death and bodily injury) or other grounds, shall not in any event

exceed the price allocable to such products or a part thereof involved in the claim, regardless of cause or fault. In no event shall

Hamamatsu be responsible to the customer or any third party for any consequential, incidental or indirect damages, including

but not limited to loss of profits, revenues, sales, data, business, goodwill or use, even if the company has been advised of the

possibility of such loss or damage. The limitation of liability set forth herein applies both to products and services purchased or

otherwise provided hereunder. This warranty is limited to repair or replacement, at the sole option of Hamamatsu, of any product

which is defective in workmanship or materials used in manufacture. All warranty claims must be made within 1 year from the

date of purchase or provision of the products or services.

Products that are amenable to repair shall be done so either under warranty or pursuant to a separate repair agreement. Some

products cannot be repaired either because of the nature or age of the product, the unavailability of spare parts, or the extent of

the damage is too great. Please contact your local Hamamatsu office for more details.

The products described in this catalogue should be used by persons who are accustomed to the properties of photoelectronics

devices, and have expertise in handling and operating them. They should not be used by persons who are not experienced or

trained in the necessary precautions surrounding their use.

The information in this catalogue is subject to change without prior notice.

Information furnished by Hamamatsu is believed to be reliable. However, no responsibility is assumed for possible inaccuracies

or omissions. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.

No patent rights are granted to any of the circuits described herein.

Cat. No. KAPD0002E12Sep. 2014 DNPrinted in Japan (2,500)

Main ProductsSi photodiodesAPDPhoto ICImage sensorsX-ray flat panel sensorsPSDInfrared detectorsLEDOptical communication devicesAutomotive devicesMini-spectrometers High energy particle/X-ray detectorsOpto-semiconductor modules

Hamamatsu also supplies:Photoelectric tubesImaging tubesLight sourcesImaging and processing systems

Information in this catalogue isbelieved to be reliable. However,no responsibility is assumed forpossible inaccuracies or omissions.Specifications are subject tochange without notice. No patentrights are granted to any of thecircuits described herein.

© 2014 Hamamatsu Photonics K.K.

Quality, technology, and serviceare part of every product.

HAMAMATSU PHOTONICS K.K., Solid State Division1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, JapanTelephone: (81)53-434-3311, Fax: (81)53-434-5184

www.hamamatsu.com

JAPAN:HAMAMATSU PHOTONICS K.K.325-6, Sunayama-cho, Naka-kuHamamatsu City, 430-8587, JapanTelephone: (81)53-452-2141, Fax: (81)53-456-7889

China:HAMAMATSU PHOTONICS (CHINA) Co., Ltd.B1201 Jiaming Center, No.27 Dongsanhuan Beilu,Chaoyang District, Beijing 100020, ChinaTelephone: (86)10-6586-6006, Fax: (86)10-6586-2866E-mail: [email protected]

U.S.A.:HAMAMATSU CORPORATIONMain Office360 Foothill Road,Bridgewater, N.J 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218E-mail: [email protected]

Western Sales Office:Suite 200&Suite 110, 2875 Moorpark Ave.San Jose, CA 95128, U.S.A.Telephone: (1)408-261-2022, Fax: (1)408-261-2522E-mail: [email protected]

United Kingdom, South Africa:HAMAMATSU PHOTONICS UK LIMITEDMain Office2 Howard Court, 10 Tewin Road, Welwyn Garden City,Hertfordshire AL7 1BW, United KingdomTelephone: (44)1707-294888, Fax: (44)1707-325777E-mail: [email protected]

South Africa office:PO Box 1112Buccleuch 2066Johannesburg, South AfricaTelephone/Fax: (27)11-802-5505

France, Portugal, Belgium, Switzerland, Spain:HAMAMATSU PHOTONICS FRANCE S.A.R.L.Main office: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, FranceTelephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10E-mail: [email protected]

Swiss Office:Dornacherplatz 74500 Solothurn, SwitzerlandTelephone: (41)32 625 60 60, Fax: (41)32 625 60 61E-mail: [email protected]

Belgian Office:Axisparc Technology , rue Andre Dumont 7-1435 Mont-Saint-Guibert, BelgiumTelephone: (32)10 45 63 34Fax: (32)10 45 63 67E-mail: [email protected]

Spanish Office:C. Argenters, 4 edif 2Parque Tecnolōgico del Vallēs 08290 Cerdanyola (Barcelona), SpainTelephone: (34)93 582 44 30Fax: (34)93 582 44 31E-mail: [email protected]

Germany, Denmark, Netherlands, Poland:HAMAMATSU PHOTONICS DEUTSCHLAND GmbHMain office: Arzbergerstr. 10,D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0, Fax: (49)8152-265-8E-mail: [email protected]

Danish Office:Lautruphoj 1-3DK-2750 Ballerup, DenmarkTelephone: (45)70 20 93 69, Fax: (45)44 20 99 10E-mail: [email protected]

Netherlands Office:Televisieweg 2NL-1322 AC Almere, The NetherlandsTelephone: (31)36-5405384, Fax: (31)36-5244948E-mail: [email protected]

Poland Office:02-525 Warsaw,8 St. A. Boboli Str., PolandTelephone: (48)22-646-0016, Fax: (48)22-646-0018E-mail: [email protected]

North Europe and CIS:HAMAMATSU PHOTONICS NORDEN ABMain OfficeTorshamnsgatan 35 16440 Kista, SwedenTelephone: (46)8-509-031-00, Fax: (46)8-509-031-01E-mail: [email protected]

Russian Office:11, Chistoprudny Boulevard, Building 1,101000, Moscow, RussiaTelephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19E-mail: [email protected]

Italy:HAMAMATSU PHOTONICS ITALIA S.r.l.Main office: Strada della Moia, 1 int. 620020 Arese (Milano), ItalyTelephone: (39)02-93581733Fax: (39)02-93581741E-mail: [email protected]

Rome Office:Viale Cesare Pavese, 43500144 Roma, ItalyTelephone: (39)06-50513454, Fax: (39)06-50513460E-mail: [email protected]

Taiwan:HAKUTO TAIWAN LTD.6F, No.308, Pa teh Road, Sec, 2,Taipei, Taiwan R.O.C.Telephone: (886)2-8772-8910Fax: (886)2-8772-8918

KORYO ELECTRONICS CO., LTD.9F-7, No.79, Hsin Tai Wu Road Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C.Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147

Republic of Korea:SANGKI CORPORATIONSuite 431, World Vision BLDG.24-2 Yoido-DongYoungdeungpo-KuSeoul, 150-877Telephone: (82)2-780-8515Fax: (82)2-784-6062

Singapore:HAKUTO SINGAPORE PTE LTD.Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04Kaki Bukit Industrial Estate, Singapore 417938Telephone: (65)67458910, Fax: (65)67418200

Sales Offices Image Sensors

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