Home >Documents >Semiconductor Packaging Assembly Technology -...

Semiconductor Packaging Assembly Technology -...

Date post:06-Feb-2018
View:219 times
Download:0 times
Share this document with a friend
  • Semiconductor Packaging Assembly Technology


    This chapter describes the fundamentals of the processesused by National Semiconductor to assemble IC devices inelectronic packages. Electronic packaging provides the in-terconnection from the IC to the printed circuit board (PCB).Another function is to provide the desired mechanical andenvironmental protection to ensure reliability and perfor-mance. Three fundamental assembly flow processes (Table1) are covered in this chapter: 1) plastic leadframe-basedpackages, 2) plastic ball grid array (PBGA), and 3) hermeticpackages.

    TABLE 1. Assembly Flow Processes for ElectronicPackages


    Plastic (BGA) Hermetic

    Wafer Sort Wafer Sort Wafer Sort

    2nd Optical 2nd Optical2nd


    Wafer Mount Wafer MountWaferMount

    Wafer Sawing Wafer SawingWafer


    Die Attach Die Attach Die Attach

    Wire Bond Wire Bond Wire Bond

    3rd Optical 3rd Optical3rd


    Encapsulate(Mold Compound)

    Encapsulate (MoldCompound or Glob

    Top)Lid Seal

    DejunkBall Attach and



    Deflash Singulate

    Marking Ball Inspection

    Plating Marking

    Trim and Form

    Final Inspection

    The fundamental package assembly processes for lead-frame and hermetic packaging have remained relatively un-changed over the past 30 years, though the equipment andmaterials have undergone considerable advancement. As-sembly equipment is no longer as labor intensive. Process-ing is typically carried out on automated equipment designedand manufactured for high-volume production. Materials areof higher purity and have properties tailored for a specific ap-plication.

    New Technology Introduction AndVerificationBefore implementing a new technology, either a material oran assembly technology, National Semiconductor utilizes arigorous system to characterize and verify the suitability ofthe change for high-volume production.

    1. Feasibility

    A preliminary analysis of the process or material is con-ducted to determine the feasibility of introducing a newor changing a material/process technology. This analy-sis includes a benchmark assessment of available andcompeting technologies.

    2. Prototypes

    Prototype parts are assembled to provide an initialsample size for analysis.

    3. Assembly

    Parts are assembled in production equipment to furtherverify the technology change.

    4. Testing

    Assembled devices are put through testing to ensure theintegrity of the technology.

    5. Process Characterization

    A full process characterization is conducted to determinethe readiness of the new technology for high-volumemanufacturing. This step utilizes design of experiment(DOE) methodologies.

    6. Manufacturing Verification

    Production lots are assembled and put through the re-quired qualification test to determine package reliability.

    7. Production

    After successfully completing the previous steps, thetechnology is released for full production.

    Die PreparationDie preparation is common to all three types of processflows.

    First wafers are sorted at the assembly site and stored in adie bank. A 2nd optical visual inspection is conducted to in-spect for defects before the wafers are released for produc-tion.

    Next wafers are mounted on a backing tape that adheres tothe back of the wafer. The backing/mounting tape providessupport for handling during wafer saw and the die attach pro-cess.

    The wafer saw process cuts the individual die from the waferleaving the die on the backing tape. The wafer saw equip-ment consists of automated handling equipment, saw blade,and an image recognition system. The image recognitionsystem maps the wafer surface to identify the areas to becut, known as the saw street. DI Water is dispensed on thewafer during the saw process to wash away particles (Si

    August 1999S





    2000 National Semiconductor Corporation MS011800 www.national.com

  • Die Preparation (Continued)Dust) and to provide lubrication during the dicing process.Wafers are dried by spinning the wafer at a high RPM beforegoing to the die attach process.

    Plastic Leadframe-Based PackagesDIE ATTACH

    Die attach provides the mechanical support between the sili-con die and the substrate, i.e,. leadframe, plastic or ceramicsubstrate. The die attach is also critical to the thermal and,for some applications, the electrical performance of the de-vice.


    The die attach equipment is configured to handle the incom-ing wafer and substrate simultaneously. An image recogni-tion system identifies individual die to be removed from thewafer backing/Mounting tape, while die attach material isdispensed in controled amounts on to the substrate. A nonpierce through plunge up needle/s assists to separate an in-dividual die to be picked by the collet on the pick-up head ofthe die attacher. Finally, the die is aligned in the proper orien-tation and position on the substrate.


    The type of material used for die attach is a function of thepackage type and performance requirements. Table 2 listsgeneral materials for the various package types.

    TABLE 2. Overview of Die Attach Materials

    Package Type Material Requirements


    Epoxy (silverfilled) ModifiedEpoxies CyanateEster Blends

    Low MoistureAbsorptionThermalDissipation

    Plastic (Power) Solder (Softsolders)


    The epoxy and cyanate ester are two types of polymers usedas a die attach between the die and the leadframe. Depend-ing on the leadframe design, adhesion may be directly tocopper, silver plating, or palladium plating. Die attach mate-rials are filled with silver particles to increase the thermal dis-sipation properties. Material is dispensed from syringes incontrolled amounts. These materials have defined shelvelifes and, therefore, the recommended guidelines must befollowed when handling in a manufacturing environment. Af-ter placement of the die, the die attach is cured; typical curetemperatures are in the 125-175C range

    Some power packages use soft solders as the die attachmaterial between the die and the leadframe. These materialsare lead-tin based and provide an excellent mechanicalbond with superior thermal dissipation properties comparedto polymer die attach. A wafer back metal is required to formthe bond between the solder and the wafer. An intermetalliclayer forms between two interfaces to provide the mechani-cal strength needed for die attach: 1) between the solder andthe wafer backmetal and 2) the solder and the leadframe.The solder die attach equipment dispenses the solder in wireor ribbon form onto the leadframe. Temperatures used in sol-der die attach range from 260C to 345C depending on thesolder metallurgy used.


    The coverage of the material dispensed during the die attachprocess is critical to the reliability and performance of thepackage. The presence of voids and variations in thicknessare undesirable. Excessive or insufficient coverage of the dieattach material makes the device susceptible to reliabilityfailures. The adhesion strength of the die attach is weakenedby the presence of voids, particularly during temperaturecycle excursions, and can impact the ability of the die attachmaterial to dissipate heat away from the device. Lack ofthickness control can contribute to reliability failures and im-pact the subsequent wire bond process. Typical Bond linethickness is between 1 to 2 mils.


    Wire bonds are the most common means of providing anelectrical connection from the IC device to the substrate/Leadframe. The wire bond process must achieve highthroughputs and production yields to be acceptable on a costbasis. High-speed wire bond equipment consists of a han-dling system to feed the substrate/leadframe into the workarea. Image recognition systems ensure the die is orientatedto match the bonding diagram for a particular device. Wiresare bonded one wire at a time.


    Thermosonic bonding is used with gold and copper wire. Thewire is fed through a ceramic capillary. A combination of tem-perature and ultrasonic energy forms the metallic wire bond.For each interconnection two wire bonds are formed, one atthe die and the other at the leadframe/substrate. The firstbond involves the formation of a ball with an electric flame-off (EFO) process. The ball is placed in direct contact withinthe bond pad opening on the die, under load (Bond Force)and ultrasonic energy within a few milliseconds (Bond Time)& forms a ball bond at the Al bond pad metal. The BondForce, US Power & Time forms a Au-Al intermetallic layerthat makes the connection on the Bond Pad of the Die. Thewire is then lifted to form a loop and then is placed in contactwith the desired bond area of the leadframe/substrate toform a wedge bond. Bonding temperature, ultrasonic energy,and bond force & Time are key process parameters con-trolled to form a reliable connection from the Die to theLeadframe/Substrate. The Shape of the loop for a specificcapability is controlled by the software that drives the motionof the bondhead. The Ball Bond reliability at 1st bond (ballBond) & 2nd bond (wedge) is very sensitive to any move-ment of the Die or the Substrate/leadframe. So during wirebond operation, the die & the substrate/leadframe must beheld rigidly.

    Next major issue with regards to 1st bond reliability is theBrittle intermetallic (Purple Plague; AuAl2) formation. TheAu-Al ntermetallic formation has 5 different phases(Au5Al2,Au2Al,AuAl2,AuAl & Au4Al). Au-Al phase changesare a factor of temperature & time. So if the bonds areheated at a high temperature (350C) over a period of 5 hrs,it will form a brittle Au-Al intermetallic phase & form voidswithin the ball bond & finally lifts the ball & opens the connec-tion. This will result in failure of the device. The desired inter-metallic formation which will form a reliable bonds areAu5Al2 & Au2Al.












    www.national.com 2

  • Ultrasonic bonding is used to form aluminum wire bonds.There is no heat needed to diffuse the Al wire into the Albond pad. The Al-Al bonds are mechanically welded. Thewire is placed in direct contact with the bonding tool and thebond pad. Application of ultrasonic energy forms a wedgebond.

    Bond Pad Metallurgy

    The type and cleanliness of the aluminum bond pad metalli-zation are important factors to be considered in forming thisfirst wire bond. The bonding force and ultrasonic energy areoptimized for the bond pad metallurgy. Attributes effectingthe bond pad metallization include alloy content, grain size,underlying metallurgy, and surface roughness and cleanli-ness. Typically all of National Semiconductor Devices are CuDoped up to 0.5%. Some customized process technologiesmay be different which require up to 1% of Si doping. Toplayer Bond Pad Metallization Thickness & all of the metalStructure is also critical to the bond integrity. Thicker Toplayer metallization & a robust structure is ideal to avoid anylifted Bonds or Bond Cratering which is a phenomena wheredamages are seen in the underlying structure under the toplayer metal.


    The mechanical properties and diameter of the wire are im-portant wire attributes that impact the bonding process andyield. Gold wire is 99.99% pure with 100 ppm dopant level.The dopants impart the desired mechanical properties with-out severely limiting the electrical conductivity. Copper wirerequires an inert gas environment to prevent oxidation.


    Several methods are employed to evaluate and ensure theintegrity of the wire bond process.

    1. Visual Inspection

    Visual techniques are used to ensure the proper ball andwedge bonds have been formed. Visual inspection alsoverifies the bonds are properly placed with respect to thebond pads & Bond Fingers of the leadframe/substrate.Besides that, the visual inspection also screens possiblebond defects that may results to an open or short basedon a specified defined criteria of wire clearance & closeproximity of each bond to the other.

    2. Pull Test

    The wire pull test is used to measure the strength andfailure mode of the wire bond. A small hook is attachedto the wire loop and pulled. The hook is generally placedat the highest point close to the 1st bond to gauge thestrength of the 1st bond or next to the wedge at the 2ndbond to ensure a reliable weld. Generally, if the hook isplaced at the mid span of the wire, then the test willshow the weakest link of the bond. This is typically eitherthe neck of the ball bond (right above the ball) or at theheel of the wedge bond. The Pull test is basically a func-tion of the wire diameter. Loop height & wire span arethe most significant factors that determines the strengthof a wire for a given wire diameter. Shorter span & alower loop will result in a lower pull strength. As opposedto a longer span & a higher loop height which will resultin higher pull strength. Pull Test is a destructive test & itsa Statistical Process Control monitor at all of NationalSemiconductors Assembly sites. Min. Pull for 0.9, 1.0 &1.3 mils wire diameters are 3.0, 4.0 & 5.0 gm respec-tively. Besides the gm Force value, the pull test modesare also recorded & monitored regularly. Pull Test pa-rameters like pull speed must be optimized for best re-sults. This test monitors the quality of the wire bond pro-cess.

    3. Ball Shear Test

    Ball shear test is another method for evaluating the qual-ity of a ball bond. A shear tool is aligned adjacent to theball bond and a force is applied. The bond strength andfailure mode are measures of the ball bond quality. BallShear Data reflects the intermetalic formation & its cov-erage of the bonds. So a larger ball should have a highershear strength based on a larger area of intermetalic for-mation between the Au ball & Al bond pad metal. Theball shear is gauged by gm Force over the area of theball formation. Based on reliability data, 6gm/sq mil ballshear over an area will result in a reliable interconnect.Just like pull test, Ball shear test is also a destructivetest. The Shear Force/gm is recorded on a StatisticalProcess Control Chart & monitored regularly. The shearmodes of Au on the bond pad after the shear is also re-corded on the SPC charts. Ball shear results are best ifthe Shear tool is 1 mil smaller than the desired ball sizebeing sheared & the tool is setback to at least 3 micronfrom the shear surface prior to shear. Like Pull Test ,shear speed & shear distance must be optimized forbest results. This Test also monitors the quality of thewire bond process.



    FIGURE 1. Shows a cross section of a Au-Al bond







  • 4. Bake Test

    Wire pull and ball shear are also employed not only tomeasure the quality of the wire bond but used to evalu-ate the long-term quality following a bake test. Duringthe bonding process and during subsequent exposuresto elevated temperatures, intermetalic compounds formalong the gold wire-aluminum bond pad interface. Theseintermetalic layers, which are a function of temperature& time are necessary in achieving the desired bondstrength, but are also prone to void formation when agedat elevated temperatures.

    The void formation is referred to as Kirkendahl voidingand is caused by the rapid diffusion of aluminum into theintermetalic phase. If excessive diffusion of aluminumoccurs, voids accumulate along with the intermetalic,and weaken the wire bond. To ensure the long-term re-liability of wire bonds, samples are tested at evaluatedtemperatures like 175C at 5 to 24 hrs depending onpackage or device, and bond strengths characterized bywire pull and ball shear.

    5. Nickel Decoration

    A nickel decoration test is employed to determine if thebonding process has induced cratering within the bondpad. Cratering is the cracking and failure of the glasslayers underlying the bond pad because of excessivebond US Power/force during the wire bond process.Nickel decoration involves the wet etching of the alumi-num metallization and the deposition of a thin nickellayer. This layer will highlight the presence of cracks inthe underlying dielectric. Aluminum bond pads without atitanium-tungsten underlayer are particularly prone tothe cratering problem and require tight wire bond pro-cess windows to avoid this problem. Increasing the alu-minum thickness is one solution to eliminate cratering,though this option may not always be desirable.

    Fine Pitch Wire Bonding

    To support the need to increase the functions on single Sidevices, the number of bond pads will have to increase toaccommodate the added functions. The impact of increasingthe number of bond pads will result in larger die sizes, in-creasing the cost of Si. This raises the need to optimize theresulting layouts to overcome this cost impact.

    Based on all the optimization, the bond pad must be packedcloser which means reducing the bond pad pitches, bondpad metal & passivation sizes. There are 2 alternatives todoing this. First, if the density of the circuit is core limited,than the bond pad layout will be maintained in an in-line con-figuration with much smaller pitch. Typically the standardbond pad pitches are 100 to 125 micron. In a fine pitch layoutthe bond pad pitches will now be reduce to 80 to 90 micron.Assembly Sites are qualified to assemble high volume prod-ucts with 90 micron in-line bond pad pitch. 80 micron in-linepitch is also qualified but pending high volume verificationrampup.

    Second, if the device is pad limited & not core limited, thanthe bond pad configuration can be staggered. Wire Bondsare made from both rows of staggered bond pads at differentloop heights. Wire bonds from outer row of staggered bondpads are bonded to inner bond fingers at a lower loop. Theinner row of the bond pads are bonded to the outer bond fin-gers at a higher loop. The vertical wire to wire clearance fromboth row of bond pads should not be less than 3 mils. As-sembly sites(NSSG) is currently qualified with 64 micronstaggered wire bond capability. 60 micron staggered is alsoqualified pending high volume verification rampup.

    Fine Pitch wirebonding require precision ball size formation& bond placement. One of the critical design rules of finepitch wire bonding is forming the ball bond 100% within theBond Pad. The consistent ball size formation has been im-proved tremendously by the Wire Bond Equipment Suppliersby improving the Electrical Flame Off(EFO) unit & BondForce Control. The Bond Placement accuracy has also beenupgraded by means of a combination of Hardware & Soft-ware Control by the Equipment Suppliers, Especially ESEC& KNS. Ball Shear & Pull Test requirements have been main-tained with all these modifications & upgrades.


    FIGURE 2. 70 micron in-line Fine Pitch Wire Bonding


    FIGURE 3. 60 micron Staggered Fine Pitch WireBonding Capability












    www.national.com 4


    Mold compound protects the device mechanically and envi-ronmentally from the outside environment. Transfer moldingis used to encapsulate most plastic packages.

    Mold Compounds

    Mold compounds are formulated from epoxy resins contain-ing inorganic fillers, catalysts, flame retardants, stress modi-fiers, adhesion promoters, and other additives. Fused silica,the filler most commonly used, imparts the desired coeffi-cient of thermal expansion, elastic modulus, and fracturetoughness properties.

    Most resin systems are based on an epoxy cresol novolac(ECN) chemistry though advanced resin systems have beendeveloped to meet demanding requirements associated withmoisture sensitivity and high temperature operation. Fillershape impacts the loading level of the filler.

    TABLE 3. Basic Mold Compound Formulations



    Standard ECN/angularfused silica

    RelativelyHigh Stress

    Low Stress ECN/angularand roundfused silica

    Containssilicon rubberadditive forlow stress

    Biphenyl Biphenylepoxyresin/angularand roundfused silica

    Low moistureabsorption

    Multifunctional Multifunctionalepoxy resins/angular andround fusedsilica

    Hightemperatureapplicationsand warpsensitivepackages

    Transfer Molding

    Transfer molding is used to encapsulate leadframe basedpackages and some PBGA packages. This process involves

    the liquidification and transfer of pelletized mold compoundin a mold press. The liquidification results in a low viscositymaterial that readily flows into the mold cavity and com-pletely encapsulates the device. Shortly after the transferprocess into the mold cavity, the cure reaction begins andthe viscosity of the mold compound increases until the resinsystem is hardened. A further cure cycle takes place outsidethe mold in an oven to ensure the mold compound is com-pletely cured.

    Process parameters are optimized to ensure the complete fillof the mold cavity and the elimination of voids in the moldcompound. Also critical to the mold process is the design ofthe mold tool. Runners and gates are designed so the flow ofmold compound into the mold cavity is complete without theformation of voids.

    Depending on the wire pitch, the mold process is further op-timized to prevent wire sweep that can result in electricalshorts inside the package. Process parameters that are con-trolled are the transfer rate, temperature, and pressure. Thefinal cure cycle (temperature and time) determines the finalproperties and, thus, the reliability of the molded package.


    The dejunk process removes excess mold compound thatmay be accumulated on the leadframe from molding.

    Media deflash bombards the package surface with smallglass particles to prepare the leadframe for plating and themold compound for marking.


    The lead finish allows for the mechanical and electrical con-nection between the package and the printed circuit board.Leadframe based packages most commonly use tin-leadsolder plating as the final lead finish. Nickel-palladium fin-ishes are also available.

    During the plating process the leadframe strip goes througha series of steps involving pretreatment, rinse, plating, dry-ing, and inspection. Process baths are carefully monitoredfor chemical composition and plating parameters such asvoltage, current density, temperature, and time. Appearance,solderability, composition, and thickness are key qualityitems for plating.


    Trim and form is the process where the individual leads ofthe leadframe are separated from the leadframe strip. First,the process involves the removal of the dambar that electri-cally isolates the leads. Second, the leads are placed in tool-


    FIGURE 4. Shows a series of in-line Ball Bond at 70micron Pad Pitch with Ball Placement 100 % within the

    Bond Pad Opening.


    FIGURE 5. Wire Sweep In A Fine Pitch DeviceResulting in Shorts







  • ing, cut, and formed mechanically to the specified shaped.J-bend and gull-wing shapes are used for surface mountedplastic packages. Individual units are singulated from theleadframe strip, inspected for lead coplanarity, and placed intrays or tubes.

    The lead forming process is critical to achieve the coplanarleads required for surface mount processes. Tool cleaningduring maintenance is crucial to ensure the quality of theprocess.


    Marking is used to place corporate and product identificationon a packaged device. Marking allows for product differentia-tion. Either ink or laser methods are used to mark packages.Laser marking is preferred in many applications because ofits higher throughput and better resolution.

    Plastic Ball Grid Array (PBGA)DIE ATTACH

    The die attach process and equipment for PBGA are similarto the leadframe based packaging. Die attach material for-mulations are optimized to provide strong adhesion to theplastic substrate.

    TABLE 4. Die Attach Materials for PBGA


    Material Requirements

    Plastic (BGA) EpoxyModifiedEpoxies

    Low MoistureAbsorptionThermalDissipation


    Bonding to a plastic substrate typically involves lower tem-peratures than bonding to a leadframe alloy. Temperaturesare reduced (to 160 C) to maintain sufficient strength in thesubstrate material so that the ultrasonic energy is efficientlyutilized.


    Transfer molding is used to encapsulate some PBGA pack-ages. Emerging for other PBGA applications is the use of liq-uid encapsulants. Liquid encapsulants are used where wirepitch is tight and for filling cavity packages.

    Liquid encapsulants are also formulated using epoxy resins,fused silica filler, and other additives. Being in liquid form,these encapsulant materials have low viscosity and can befilled with high levels of silica to impart desired mechanicalproperties.

    Liquid encapsulants are dispensed from a syringe. Depend-ing on the PBGA configuration, a dam resin may be depos-ited as the first step. The dam resin defines the encapsula-tion area around the device. The cavity or defined area isfilled with encapsulant that covers the device and the wires.Finally a cure process is used. The lower viscosity of liquidencapsulants greatly diminishes the probability of wiresweep.


    Unlike leadframe packages, PBGAs use solder balls as theinterconnect path from the package to the printed circuitboard. Instead of lead forming processes, solder balls are at-tached to the substrate. Solder balls are attached by apply-ing a flux, placing the balls on the pads, and reflowing thePBGA. The reflow process forms a metallurgical joint be-

    tween the solder ball and the substrate ball pad. Alignment isa key parameter during ball placement to avoid missing ballsor solder bridging.


    Marking of PBGAs is the same as for the plastic leadframepackages.


    Individual PBGA units are cut from the substrate strip andplaced in trays for subsequent handling.


    Assembled PBGAs are inspected to measure the coplanarityof the solder balls.

    Hermetic PackagingNational Semiconductor offers a wide variety of ceramic andmetal can packages for through-hole and surface mount ap-plications. These ceramic and metal can packages are of-fered as solutions for high reliability, high performance appli-cations and are extensively used in military/aerospace andcommercial applications. By design, a hermetic seal pre-vents gases and liquids from entering the package cavitywhere the die is mounted. Because of the package materi-als, hermetic packages are able to withstand higher tem-peratures than equivalent plastic packages.


    Hermetic packaging uses a Gold-Silicon eutectic or Silverfilled glass to attach the die to the substrate. These materialsare processed at high temperatures and have good thermaldissipation properties. The Gold-Silicon eutectic requires awafer backmetal to achieve a high reliability die attach. Thedie is placed onto a gold preform of the die attach materialand is heated in a controlled atmosphere. At the elevatedprocess temperatures silicon from the die diffuses into thegold preform forming a liquid material. The liquid materialreadily wets the wafer backside and the substrate metalliza-tion to form the gold-silicon eutectic die attach.

    TABLE 5. Die Attach Materials for Hermetic Packaging


    Material Requirements



    High ProcessTemperature

    CERAMIC(PGA, Side-Braze)


    High ProcessTemperature


    Typically Ultrasonic Al wdge Bonding is widely used in a ce-ramic package. The Au Ball Bond can also be used.


    The construction of hermetic packages is divided into threemain categories:

    1. Multilayer ceramic packages

    2. Pressed ceramic packages

    3. Metal Can packages

    Multilayer Ceramic Packages

    For multilayer packages, ceramic tape layers are metallized,laminated and fired to create the package body. The metal-lized areas are then brazed to the package body. The metal-lized areas of the package are then electroplated (usually












    www.national.com 6

  • nickel followed by gold). After assembly, the hermetic seal isachieved by soldering a metal lid onto the metallized andplated seal ring. These packages therefore are often referredto as solder seal packages.

    The multilayer construction allows the package designer toincorporate electrical enhancements within the packagebody. For example, power and ground planes to reduce in-ductance, shield planes to reduce cross talk, and controlledcharacteristic impedance of signal lines have been incorpo-rated into multilayer ceramic packages.

    Pressed Ceramic Packages

    Pressed ceramic packages are usually a three part construc-tion:

    1. Base

    2. Lid

    3. Leadframe

    The base and lid are manufactured in the same manner bypressing ceramic powder into the desired shape, and thenfiring. Glass is then screened onto the fired base and lid. Theglass paste is then fired. During package assembly, a sepa-rate leadframe is embedded into the base glass. The her-metic seal is formed by melting the lid glass over the baseand leadframe combination. This seal method is referred toas a frit seal and therefore this package is often called aglass frit seal package.

    The pressed ceramic packages are typically lower in costthan the multilayer packages. However, the simple construc-tion does not allow for many electrical enhancements.

    Metal Can

    Metal can packages consist of a metal base with leads ex-ited through a glass seal. This glass seal can be a compres-sion seal or a matched seal. After device assembly in thepackage, a metal lid (or can) is resistance welded to themetal base forming the hermetic seal. The metal can pack-ages are usually low lead count, less than 24 leads, and lowin cost. Certain outlines, such as the TO-3, have very lowthermal resistance. These packages are used in many linearand hybrid applications.


    This Test is specified by MIL-STD-883, method 1014. It isdesigned to determine the seal integrity of hermetically pack-aged devices. Any defect in the package construction & lidseal is revealed by applying a pressure differential betweenthe cavity & the exterior of the package & detecting a result-ant leak.


    Properties of some materials used in electronic packagingare listed in Table 6. Differences in the Coefficient of ThermalExpansion (CTE) between materials contributes to stressesalong interfaces and between joints as the electronic pack-age is cycled between temperature extremes.

    TABLE 6. Material Properties

    Material CTE (ppm/C)Density(g/cm 3)


    (W/m K)





    Melting Point(C)

    Silicon 2.8 2.4 150 - - 1430


    18-65 1.9 0.67 - - 165 (Tg)

    Copper 16.5 8.96 395 1.67 0.25-0.45 1083

    Alloy 42 4.3 - 15.9 - 0.64 1425

    Gold - 19.3 293 2.2 - 1064

    Aluminum 23.8 2.80 235 2.7 83 660


    23.0 8.4 50 - - 183

    Alumina 6.9 3.6 22 - - 2050


    4.6 3.3 170 - - 2000







  • Notes



    1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implantinto the body, or (b) support or sustain life, andwhose failure to perform when properly used inaccordance with instructions for use provided in thelabeling, can be reasonably expected to result in asignificant injury to the user.

    2. A critical component is any component of a lifesupport device or system whose failure to performcan be reasonably expected to cause the failure ofthe life support device or system, or to affect itssafety or effectiveness.

    National SemiconductorCorporationAmericasTel: 1-800-272-9959Fax: 1-800-737-7018Email: [email protected]

    National SemiconductorEurope

    Fax: +49 (0) 1 80-530 85 86Email: [email protected]

    Deutsch Tel: +49 (0) 1 80-530 85 85English Tel: +49 (0) 1 80-532 78 32Franais Tel: +49 (0) 1 80-532 93 58Italiano Tel: +49 (0) 1 80-534 16 80

    National SemiconductorAsia Pacific CustomerResponse GroupTel: 65-2544466Fax: 65-2504466Email: [email protected]

    National SemiconductorJapan Ltd.Tel: 81-3-5639-7560Fax: 81-3-5639-7507













    National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

Click here to load reader

Reader Image
Embed Size (px)