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SEMICONDUCTORS AND SEMIMETALS
VOLUME 22 Lightwave Communications Technology
Volume Editor
W. T. TSANG A T & T BELL LABORATORIES
HOLMDEL, NEW JERSEY
P a r t D / > ^ Photodetectors
1985
® ACADEMIC PRESS, INC. (Harcourt Brace Jovanovich, Publishers) Orlando San Diego New York London Toronto Montreal Sydney Tokyo
Contents
LIST OF CONTRIBUTORS vii
TREATISE FOREWORD ix
FOREWORD xi PREFACE xv
Chapter 1 Physics of Avalanche Photodiodes
Federico Capasso
I. Introduction 2 II. Theory of Impact Ionization 3
III. Avalanche Multiplication and Measurement of Ionization Rates 66 IV. Avalanche Photodiodes with Enhanced Ionization Rate Ratios
and Solid-State Photomultipliers 105 References 168
Chapter 2 Compound Semiconductor Photodiodes
T. P. Pearsall and M. A. Pollack
I. Introduction 174 II. Compound Semiconductor Photodiode Principles 186
III. Compound Semiconductor Photodiode Properties 198 IV. Integrated Photodiode Devices 225
References 241
Chapter 3 Silicon and Germanium Avalanche Photodiodes
Takao Kaneda
I. Introduction 247 II. Design Considerations 249
III. Silicon Avalanche Photodiod.es 263 IV. Germanium Avalanche Photodiodes 289 V. Minimum Detectable Power 320
VI. Concluding Comments 324 References 326
v
VI CONTENTS
Chapter 4 Sensitivity of Avalanche Photodetector Receivers for High-Bit-Rate Long-Wavelength Optical Communication Systems
S. R. Forrest
I. Introduction 329 II. Digital Receiver Sensitivity 331
III. Receiver Noise Current 336 IV. Sensitivity Calculations 344 V. Examples 358
VI. Sources of Sensitivity Degradation 367 VII. Conclusions 385
References 385
Chapter 5 Phototransistors for Lightwave Communications /. С Campbell
List of Symbols 389 I. Introduction 390
II. Gain Characteristics 392 III. Transient Response and Bandwidth 411 IV. Noise Characteristics 415 V. Avalanche Effects 423
VI. Novel Structures 431 VII. Photosensitivity of Field-Effect Transistors 440
VIII. Summary 444 References 445
INDEX 449 CONTENTS OF VOLUME 22 453