SERI Photovoltaic Subcontract Reports: 1988 Abstracts and … › docs › legosti › old ›...

SERI/TP-211-3893 UC Category: 270 DE90000357

SERI Photovoltaic Subcontract Reports: 1988 Abstracts and Document Control Information

Photovoltaic Program Branch

June 1990

Prepared under Task No. PV0401 01

Solar Energy Research Institute A Division of Midwest Research Institute

1617 Cole Boulevard Golden, Colorado 80401-3393

Prepared for the U.S. Department of Energy Contract No. DE-AC02-83CH1 0093

NOTICE

This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or any agency thereof.

Printed in the United States of America Available from:

National Technical Information Service U.S. Department of Commerce

5285 Port Royal Road Springfield, VA 22161

Price: Microfiche A01 Printed Copy A03

Codes are used for pricing all publications. The code is determined by the number of pages in the publication. Information pertaining to the pricing codes can be found in the current issue of the following publications which are generally available in most libraries: Energy Research Abstracts (ERA); Government Reports Announcements and Index ( GRA and I); Scientific and Technical Abstract Reports (STAR); and publication NTIS-PR-360 available from NTIS at the above address.

L

L

PREFACE

This report contains the document control information and abstracts for SERI Photovoltaic (PV) Program Branch publications resulting from SERI's subcontracted PV research. The information is presented for reports published or distributed during fiscal year (FY) 1988. In the past, copies of the subcontractor reports were distributed to a broad spectrum of researchers in the field of photovoltaics at a considerable cost to the program. In an attempt to reduce costs and ensure that all researchers receive those current publications that are of specific interest to them, this report will outline these publications, organized by technology, on a regular basis. A list of additional publications and sources is included herein to provide the photovoltaic community with other sources of information. All of the documents represented here are available from the National Technical Information Service (NTIS) and can be purchased using the NTIS order form at the end of this document. Further information on a given subcontracted program may be obtained from the SERI technical monitor identified on each Document Control Page.

The SERI Photovoltaic Program is sponsored by the U.S. Department of Energy under contract No. DE-AC02-83CH10093. The Solar Energy Research Institute is operated by Midwest Research Institute for the U.S. Department of Energy.

iii

TABLE OF CONTENTS

Page

Amorphous Silicon Program Publications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Polycrystalline Thin Film Program Publications . . . . . . . . . . . . . . . . . . . . . . . . 12 '

High Efficiency Program Publications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 t Additional Publications and Sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 I ..

i L

I L

iv

Document Co ntrol 1 1 . SEAl Report No. 12. NTIS Accession No.

Page SERI/STR- 2 1 1 - 3214 I') t �'l 001(&, z:; 4. Title and Subtitle

3. Recipient's Accession No.

5. Publication Date

February 1988 Low-Band- Gap, Amorphous-Si l i co n-Based Al l oys by Photochem i ca l Va po r Depos i ti on, Fi nal Subcontract Report·, 6.

1 October 1985 -- 30 November 1 986

7. Author(s)

B.N . Baron, S.S . Hegedus, and S . C. Jackson 9. Performing Organization Name and Address

Inst i tute of Energy Convers i on Un i vers i ty of Del aware Newark, Del aware 19716

12. Sponsoring Organization Name and Address

Sol ar Energy Res earch Insti tute 1617 Col e Boul evard Gol den, Col orado 80401-3393

1 5 . Supplementary Notes

8. Performing Organization Rept. No.

10. Project/Task/Work Unit No.

PV740601 11. Contract (C) or Grant (G) No.

(C) XL-5- 04074-3 (G)

13. Type of Report & Period Covered

Techn i ca l Subcontract 14.

SERI Techn i cal Mon i to r: R. Mi tchel l ( 3D3) � 31/- 13 7'f 1 6. Abstract (limit: 200 words)

Th i n fi l ms of hydrogenated amorphous s i l i con-german i um al l oys were depos i ted by mercury- sen s i t i zed photochem i ca l vapor depos i t i on us i ng a novel photo-CVD reactor. Th i n fi l ms of a-S i 1-xGex :H w ith 0 l ess than or equal to x l ess than or equa l to 1 and 1 . 0 l ess than Eg l ess than 1.8 eV were depos i ted from mi xtures of s i l ane and d i s i l ane wi th germane and i ne rt gas d i l uents at substrate temperatures from 160° to 200°C. Al l oy fi l ms were cha racteri zed by measu rements o f photo- and da rk conduct i v i ty, el ectron mob i l i ty- l i feti me product, s ub-band-gap absorpt i on , and

5 den s i ty of states. D i l uti on with hydrogen i ncrea�ed the photovonduct i v i ty to loS/em and mob i l i ty-l i feti me product to 6 x 10-8 em /V for a l l oys hav i n g a band gap of 1.4 eV.

1 7 . Document Analysis

a. Descriptors S i l i con s o l a r cel l s ; amorphous state ; th i n fi l ms ; chemi ca l vapor depos i ti on

b. Identifiers/Open-Ended Terms

c. UC Categories

271

18. Availability Statement

Nati onal Techn i ca l I n formati on Serv i ce U . S . Department of Commerce 5285 Port Royal Road S pr i ngfi el d, V i rg i n i a 2 2 1 61

�--��--------------------------- 1 . Form No. 0069 (6-30-87)

1 9. No. of Pages

29

20. Price

A03

Document Control ,1. SEAl Report No. 1 2. NTIS Accession No.

Page SERI /STR- 21 1- 3256 t:D_E 3 <:j 0 0 I It 7 3. Recipient's Accession No.

4. Title and Subtitle 5. Publication Date

I nvestigation of the Orig i ns of Metastabl e, Light- October 1 987 Induced Changes in Hydrogenated Amorpho us Si"l icon, 6. Ann ual Subcontract Re port, 1 February 1 986 - 28 February 1 987

7. Author(s)

J. D. Cohen 9. Performing Organization Name and Address

Departmen t of Physics Univers ity of Oregon Eu gene, Oregon 97403


Sola r Energy Research I nstitute A Di vis i on of Midwest Research Institute 161 7 Col e Boul evard Gol den, Col orado 80401 -3393




PV740201 11 . Contract (C) or Grant (G) No.

(C) XB- 6 - 06024-1 (G)


Technica l Re port 1 4.

Technical Monitor: Byron Sta fford ( '303) :;;t.3/- 7/::t.� 16. Abstract (Limit: 200 words) Th i s re port presents res u l ts of an investigation into the metastabl e changes in the density of deep mobil ity gap states in hydrogenated amorphous sil icon, using a variety of j unct i on capaci tance techni ques . This wo rk extends previous studi es ( usi ng drive- leve l capacitance profilin g ) to some new sampl es . With these measurements, researchers examined how the distribution of occu pied gap states changes with light soaking and pa rt i al anneal ing through a series of intermediate states between states A and B . The res ul ts on two phosphorus-free sampl es indicate no qual itative change from previous res ul ts , which reveal ed a la rge metastabl e in crease in the concentration o f D- centers with l ight soaking, so phos phorus contamination is not crucial to this inc rease . Because such an increase is inconsistent with the S i -Si bond-breaking model , thi s res ul t favors a model i n which l ocal confi gurational changes s hift the gap-state energies of existing defects . Transient photocapacitance was appl ied to undo ped fil ms to investigate metastabl e changes in more detail . Resul ts seemed to con firm the magnitude of the metastabl e defect creation found by drive- l evel anal ysis on the same sampl es.

1 7 . Document Analysis

a. Descriptors Amorphous state ; s ilicon sol ar cel l s ; energy l osses ; doped material s metastabl e states


c. UC Categories

63

1 8. Availability Statement

National Technical I n formation Service U . S . De partment o f Comme rce 5285 Port Royal Road Springfield, Virginia 221 6 1

1 9. No. of Pages

3 0

20. Price

A03 2

I L

\_

f

r I. t

\_

{

Document Control , 1 . SEAl Report No. 1 2. NTIS Accession No.

Page SER I /STR- 2 1 1 - 3288 l'3:>£'b�D D ll $'"I 4. Title and Subtitle


5. Publication Date

February 1988 D iagnost i cs of Gl ow Discharges Used To Produce Hydrogenated Amorphous S i l i con Fi l ms , Annual Subcontract 6.

Report, 15 Apri l 1986- 14 June 1987

7. Author(s)

A. Ga l l agher, J. Doyl e, M. He, G. Li n , J. Scott 9. Performing Organization Name and Address

Nati onal Bureau of Standards Boul der, Col orado

Un i vers i ty of Col orado Boul der, Col orado

12. Sponsoring Organization Name and ADdress

So l a r Energy Research Institute 1617 Col e Boul evard Go l den, Col orado 8040 1- 3393

15. Supplementary Notes


1 0. Project/Task/Work Unit No.

PV740201 1 1 . Contract (C) or Grant (G) No.

(C) DB-4-04078-1 (G)


Techn i ca l Report 14.

SERI Techn i ca l Mon i tor : W . Lu ft (303) :l-3/- I g-z._3 1 6. Abstract (limit: 200 words)

Th i s report presents resul ts of res earch done to measure the neutral spec i es produced i n s i l an e, s i l ane-hydro gen, d i s i l ane, d i s i l ane- hydrogen, germa ne, germanehydrogen, and s i l ane-germane d i scharges . Interpretation and model i ng o f the data i n terms of di scharge chem i stry are al so des i rabl e. Mass-spectrometri c measurements were made of the stab l e gases fl owi ng through and produced i n s i l ane, di s i l ane, and s i l an e-germane di scharges. From these observati ons, the d i scharge stoi chi ometry was determi n ed and the react i on pathways that l ead to fi l m depos i t i on cl ari fi ed . The importance of one proces s i n g parameter ( power/fl ow ) i s expl ai ned, and a h i gh rat i o o f :gemmane/s i l ane depl eti o n i n m i x ed-gas d i scharg es i s i dent i fi ed. A cal cul at i on of rad i cal depos i t i on in pure s i l ane d i scharges s hows the domi nance of S i H3 depos i t i on at l ow powers and su ggests the reason ( surface mob i l i ty ) why th i s produce goo d- qua l i ty fi lms . Measu rements of postdepos i t i on sputt er i n g o f a-S i : H fi l ms were d i a gnosed to yiel d the thi c kness of the H-ri ch, growi ng fi l m surface l ayer, wh ich i s important i n understandi ng and model i ng the depos i ti on reacti ons a s wel l a s the effect of i on bombardment on fi l m propert i es and sputteri ng . A new, potent i al l y h i gh-rate depos i t i on method was a l so d evel oped and studi ed.

17 . Document Analysis

a. Descriptors

Amorphous state ; s i l i con sol ar cel l s ; depos i t i on ; gl ow di scharges


c. UC Categories

271


Nat i onal Tech n i ca l I n formati on S erv i ce U. S. Department of Commerce 5285 Port Royal Road S pr i ngfi el d, V i rg i n i a 22161

�--------------------------------- 3 Form No. 0069 (6-30-87)

1 9. No. of Pages

53

20. Price

A04

Document Control , ,. SEAl Report No. I 2. NTIS Accession No.

Page S ERI/STR-21 1- 3231 IDS �}/D 0 I I D <i 4. Title and Subtitle

Research on H i gh- Effi c i en cy, Stacked , Mul t i j unct i on, Amorphous S i l i con Al l oy Th i n - Fi l m Sol ar Ce l l s, Fi nal S ubcontract Report, 1 1 October 1 983 - 30 October 1 986

7. Author(s)

J. B raqaqnol o 9. Performing Organization Name and Address

Spi re Corporation Bedford, Mas s achusetts 01730


Sol ar Energy Research I nsti tute A Di vis i on of Mi dwest Research I n st i tute 1 61 7 Cole Boul evard Go l den, Col orado 80401 - 3393

15 . Supplementary Notes


5. Publication Date

October 1 987 6.



3493. 1 0 1 1 . Contract (C) or Grant ( G) No.

(C) ZB-4-03055- 1 (G)


Techn i cal Re port 1 4.

Techn i ca l Monitor: Werner Lu ft (_ 30_3} ?.3/- I �"2.-3 1 6. Abstract ( Limit: 200 words) Th i s report covers the thl rd year at a three-year proJeCt to

devel op high-effi ci ency, stabl e , mu l t i j unct i on amorphous sil i con a l l oy sol ar cell s . It descri bes new de pos i ti on techni ques to obta i n pi nho l e-free, a-S i : H al l oy fi l ms by avo i d i n g dust formation i n the pl asma; the depos i tion o f l ow-absorptance , textured Sn02 l ayers by thermal CVD of Sn(CH3) ; a more stable , high-re fl ectance Ti /Ag bacR contact; the appl i cati on of the �ew de pos i t i on techn i ques to ach i eve e ffi c i enc i es of 1 0.5% , 1 0.1 %, and 9 . 4% for a-S i :H p-i-n devi ces ; the devel opment of a- ( S i ,Ge ) : H ce l l s w i th e ffi c i enci es from 5.4% for a - ( S i , Ge ) : H cel l s to 7 . 5% for graded- ban dgap ce l l s ; and the deve l o pmen t of a- Si /a- ( Si ,Ge ) tandem cel l s wi th 6.5% and 7.2% e ffi c ienci es .

17. Document Analysis

a. Descriptors Amorphous state ; s i l i con so l a r cel l s ; chemi cal vapor de pos iti on ; graded band gaps


c. UC Categories

63


Nat i onal Techn i cal Informati on Servi ce U . S . Department of Comme rce 5285 Port Royal Road S pr i ngfi e l d, Vi rgi ni a 2 21 61

�-------------------------------- 4 Form No. 0069 (6-30-87)

1 9. No. of Pages

123

20. Price

A06

'\ I '

. / I

l

l

r \

f L

r I 1

L

r

Document Control I 1 . SEAl Report No. 1 2. NTIS Accession No.

Page SERI /STR- 2 1 1 - 3332 tlJE <;!'i!OOJ 1/£" 4. Title and Subtitle

Opt i mi zat i on of Trans parent and Refl ect i ng El ectrodes for Amorphous · Si l i co n Sol a r Cel l s , Fi nal Subcontract Report , 1 October 1986 -- 3 1 November 1987

7 . Author(s)

R . G . Gordon et a l . 9. Performing Organization Name and Address

Department of Chem i st ry Harvard Uni vers i ty Cambri dge , �1assachus etts 02138

1 2. Sponsoring Organization Name and Address

Sol ar Energy Research Insti tute 1617 Col e Boul evard Gol den , Col orado 8040 1-3393

1 5. Supplementary Notes

SER I Techn i ca l Mon i to r : J . Oh i 1 6. Abstract (Limit: 200 words)


5. Publication Date

June 1988

6.



1 1 . Contract (C) or Grant (G) No.

(C) XB-7-06 1 10-1 (G)


Tec hn i ca l Report 1 4.

I n th i s research , hydrogenated amorphous s i l i con (a-Si : H ) fi l ms were depos i ted by an i nexpens i ve , thermal l y i n du ced , atmo s pheri c- press ure chem i cal vapor depos i t i o n ( CV D ) proces s . H i gh- qua l i ty fi l ms were grown a t 300 A;s , more than two orders o f magn i tude faster than those produced b y conventi onal gl ow d i s charge . Sources of u ncontro l l ed oxygen , boron , phosphoru s , and carbon co ntami nat i on were i denti fi ed and el iminated . . The effi ci ency o f a-Si sol ar cel l s can be i ncreased by us i ng rough , rather than_smooth , t i n oxi de as t h e front-surface trans parent el ectrode , because the rough tin oxi de-s i l i con i nterface i ncreases the absorpt i o n of red l i ght ( l i ght tra ppi n g ) and reduces the refl ect i on l os s of l i ght across the whol e s pectrum . We produced , by CV D , roug h t i n oxi de fi l ms from tetramethyl t i n . Cel l s grown on the rough fi l ms had h i gher e ffi c i enci es th?n those grown on smooth t i n oxi de . We a l s o used a precu rsor t i n compound (di methyl t i n d ich l ori de ) that i s l es s costl y and l es s hazardous than some others. Rough fi l ms can be grown from d imethyl t i n d ich l ori de more than three t imes faster than from tetramethyl ti n . To comb i ne the CVD processes we need a l ayer that prevents the t i n ox i de l ayer from b e i n g attac ked by the s i l i con such as a barri er l ayer of t i tan i um oxi de , wh i ch seems to be effect i ve .


a. Descriptors Photovol ta i c cel l s ; amorphous state ; s i l i co n sol ar cel l s ; chemi cal vapo r depo s i ti on ; e ffi c i ency


c. UC Categories

2 71


Nati ona l Techn i cal I nformati on Serv i c e U . S . Department of Commerce 5285 Port Royal Road Spri ngfi el d , Vi rg i n i a 2216 1

. Form No. 0069 (6-30-87)

1 9. No. of Pages

72

20. Price

A04

5

Document Controt 1 1 . SEAl Report No. 1 2. NTIS Access1on No.

Page SER I /STR- 211 - 3343 I.DE gi 00 I 17 (o 3. Recipient's Access1on No.

4. Title and Subtitle 5. Publication Date \' June 1988 \

·Research on High- Efficiency, S i n g l e-Junction , r·1onol ithic , ...... -------------1 Thin- Fil m Amorphous Sil icon Sol ar Cel l s , Semiannual 6.

Subcontract Report No . 3 , 1 Dec . 1 985- 31 Ma y 1986 7. Author(s)

F.E . As pen et a 1 . 9. Performing Organization Name and Address

El ectron i c and I n formatio n Sector Latoratories 3M Company St. Pau l , Minnesota 55144



1 1 . Contract (C) or Grant (G) No.

(C) ZB- 4-03056-2 (G)

r L

��-----�---------------------------------------��------�--------------� r

12. Sponsoring Orgamzation Name and Address 13. Type of Report & Period Covered

So l ar Energy Research Institute Technical Report 1617 Col e Boul evard Gol den , Col orado 80401


14.

SERI Technical t·1onitor: �L Ha l l ace (3o3)d-3J� 13�c) 1 6. Abstract (Limrt: 200 words)

This report describes pro gres s in research on high -efficiency , s in g l e-junction , mono- \ l ithic, thin -film amorphous s il icon sol ar cel l s. The work was divided into five tas ks , wich incl ude research o n a-Si material s ; nonsemiconductor materials ; web growth ; and monol ith ic , i ntraconnected cel l s and submodu l es . Al s o described is work done with a mul tichamber deposition system . Res ul ts incl uded achievin g an optical band ga p of 1.73- 1.75 eV in the intrinsic i-l ayer., A new ro11 coater was acquired.for use as a mul til a yer trans parent top-contact depo s i t i on s ystem. Textured substrates were a l so investigated to increase the short-circuit current . I n do ping pro fil e work , a model indicated that a carbon pro fil e cou l d be used i n place of the boron profil e to raise the open-circuit vol ta ge . Sil ver-fil l ed epoxy- I TO contacts were found to be unstab l e over time . Two web-growth methods were

2demon strated to obtain

submodul e performance that is about 80% of sma l l -area ( 1 em ) efficiency . \1ith the mul tichamber depos ition system , a-Si p-i-n l ayers were depos ited onto metal l ized pol yimide web in a continuous , rol l -to-rol l process .


a. Descriptors Photovol taic cel l s ; amorphous state· ; s il icon so l a r cells ; thin fil ms ; depositio n ; doped material s


c. UC Categories

271


National Technical I n formation Service U. S . Department of Commerce

19. No. of Pages

65

l

' l

<"

5285 Port Royal Road I I �------------------�L

Sprin gfie l d , Virgin ia 2 2 1 61 20. Price

A04

6 . Form No. 0069 (6-30-87)

Document Control , , . SEAl Report No. , 2. NTIS Accession No.

Page SER I / STR- 2 1 1- 3350 I)��()()// 1�q 4. Title and Subtitle

Res earch on Amorphous -Si l i con-Based Th i n - Fi l m Photovo l t a i c Dev i ces , Semiannual Subcontract Report , 1 Ju ly 1987--31 December 1987

7. Author(s) W . B ottenberg , K. Mi tchel l , and R . W i et i ng

9. Performing Organization Name and Address

ARCO Sol a r , Inc . Camari l l o , Cal i forn i a 9301 0


Sol a r Energy Research Insti tute 1 617 Col e Boul evard Goden , Col orado 8040 1-3393


SER I Techn i cal Mon i tor : 16. Abstract (Limit: 200 words)


5. Publication Date

May 1988 6.




<Cl ZB-7-06003-3 (G)


Techn i cal Report

14.

The object i ve of th i s work i s to devel o p 1 3 % ( aperture area ) effi c i ent , 850-cm2 fou r-term i nal hybr id tandem submodul es . The mod u l e des i gn cons i sts o f a copperi nd i um-d i sel en i de ( C I S) -based bottom c i rcu i t and a semi trans parent , th i n- fi l m s i l i co n- hydro gen ( T FS ) - based top c i rcu i t . H i g h-performance , semi transparent T FS dev i ces and submodul es were fa bri cated i n wh i c h ZnO was used i n the front and rea r transparent conductors . H i gh - performance C I S dev i ces and submodu l es were a l s o fabri cated ; however , the l ocat i on and nature of the j unct i o n are not yet understood . Representat i v e fou r-term i nal hybri d tandem dev i ces and submodul es were fabri cated from TFS and C I S component c i rcu i ts . Opt i ca l coupl i n g between the c i rcu i ts was l ower than expected , because of refl ecti on l osses at key i nterfaces . Effi ci enc ies obta i ned for these dev i ces a nd modu l es i ncl ude 1 4 . 17% for a fourterm i nal , 4-cm2 tandem cel l and 12.3% fo r a four-termi nal , tandem modul e .


a. Descriptors Photovo l ta i c cel l s ; s i l i con sol ar cel l s ; copper sel en i de sol ar cel l s ; th i n fi l ms


c. UC Categories

270


Nat i onal Techn i ca l I n fo rmati on Servi ce U. S. Department of Commerce 5285 Port Royal Road Spr i ngfi e l d , V i rgi n i a 22161

. Form No. 0069 (6-30-87)

1 9. No. of Pages

107

20. Price

A06

7

I-':""

D

-:

oc

�

u

-

m

_

e

�

n

-=

t

�

C

-

o

�

n

-

t

_

r

_

o

_

l

_l1

;;..;

.

;;.;.

S

.;.;

E

;.:.

RI

...;;

R

..;.

e

..;.

p

..;.

ort

..;;;;..;;.

N

.;;;.

o .

_;;;.;;;..;;;.,;;;.._ _ ....... I 2-

"'"

N

:...�

...

I

:.:..

S

..:;

A

:;.;

c

�

ce

�

ss

;;..

io

..:.

n

....

N

:&

o

;;.;

.... -_�

-+:

3

-

.

=

R

�

ec

�

ip

-

ie

"':'

n

�

t ·

_

s

-:::

A

:-

cc

:-

e

-

ss

-

io

_

n

_

N

_

o

_

.

___ .. .\ .. 1 Page SERI/STR-2 11- 3351 Jl)E ?/flee /((-c;!


Research of Amorphous Si l i con-German i um Al l oys for Tan dem ..,_ _M_a _Y_1 9_ 8_8 _______ �

Sol ar Cel l s , Annual Subcontract Report , 1 Jul y 1 9 86-- 6 .

31 August 1 9 8 7 7. Author(s)

W. Pau l and K.D. Mackenz i e 9. Performing Organization Name and Address

Di v i s i on o f Appl i ed Sc i ences Harvard Un i ve rs i ty Cambri dge , Massach usetts 02 1 38


Sol ar Energy Research I nst itute 1617 Col e Boul evard Gol den , Col orado 80401 - 3393


SERI Techn i cal Mon i tor : W . Lu ft ( 3D3} 'd- 3) -I S?-3 16. Abstract (Limit: 200 words)



PV840201 1 1. Contract ( C) or Grant (G) No.

(Cl XB-7-06071- 1 (G)


TPr:hnicnl RPnnrt 14.

The objecti ve o f th i s work i s to expl ore th e depos i ti o n co nd it i ons necessary to produce amorphous Si - Ge al l oys w i t h a band gap near 1 . 3 to 1 . 4 eV who s e photoel ectron i c properti es wi l l be comparabl e to those of a-Si :H . It i s ess enti al to understand why the photoconduct i vi ty o f a-Si t-x ·Gex:H:F i s superi or to that of a-Si l- xGex : H , wh i l e mos t of th e common l y measured opti cal and el ectron i c properties rema i n unchan ged . The focus of th i s i nves t i gati o n was on depos i t i on con d i t i ons. and on the mi crostructure o f the fi l ms as revea l ed by transm i s s i on el ectron microscopy, ga s evol uti on , and d i fferent i a l scan n i ng cal orimetry, concentrat i n g on a l l oys with a h i gh Ge content . Fi l ms were made b oth by gl ow d i scharge and by photochemi cal vapor deposit i on in a new type of apparatus. Structure� very i mportant in determi ning photoel ectron i c properti es , depends on the total i ty of the depo s i t i on parameters. and it is therefore important to unders tand the con d i t i ons i n the pl asma and at· the i nterface of the growi ng fi l m , when Si H4, GeH4, and H2 are present in d i fferent concentrat i o ns , whatever the method of de pos i t i on .


a. Descriptors Photovo l ta i c cel ls ; amorphous state ; s i l i con so l ar cel ls ; energy ga p ; depos i t i on


c. UC Categories

271

18. Availability Statement 19. No. of Pages

Nat i onal Techn ical In formati on Serv i ce ( U.S. Dept . of CommercE ) · 69 5285 Port Royal Road Spr i n g fi el d , V i rg i n i a 22161

20. Price

A04

8

l \ L

r l

c t

! l

J l

r I l

r '

( i

( t

\ l

Document Controt ,,_ SEAl Report No.

Page SERI /STR-211-3352 4. Title and Subtitle

Structure of Amorphous S i l i con Al l oy Fi l ms , Annual Subcontract Report , 15 January 1987--14 January 1988

7. Author(s)

R. E. Norberg and P. A. Fedders 9. Performing Organization Name and Address

Department of Phys i cs Was h i n gton Un i vers i ty St. Lou i s , Mi s souri


Sol ar Energy Research Inst i t ute 1617 Col e Boul evard Gol den , Col orado 80401-339 3


3. Rec1p1ent's Accession No.

5. Publication Date

�ay 1988 6.



PV840201 1 1 . Contract (C) or Grant {G) No.

(C) XB-7-0 6055-1 (G)


Techn i cal Report 1 4.

SERI Techn i cal Mon i tor: W. Lu ft ( 3c,-3.) ?-- 3) - 1 � 2..3 1 6. Abstract (Limit: 200 words)

The pri nc i pa l object i ve of the fi rst year of thi s research program was to improve our understandi n g at the mi crosco p i c l evel of amorphous s i l i con-german i um al l oy fi l ms depos i ted under vari ous con di t i ons to as s i st researchers i n produci ng h i gh er qual i ty fi l ms. The method was a j o i nt theoreti cal and experi menta l approach to the correl ati on of mucl ear magnet i c resonance ( NMR) , e l ectron s p i n resonance ( ESR ) , and other character i zati ons , es pec i a l l y rel ati n g to rearrangements of hydrogen. Deuteron magnet i c resonance revea l s the presence of (and changes i n ) t i g ht l y bonded hydrogen ( deuteri um� wea kl y bonded hydrogen , mol ecu l ar hydro gen , and rotati ng s i l yl groups . Ge-D con f i gurat i ons a ppear to be more var i ed t han S i -D . I t has been shown that ESR hyperfi ne structure res u l ts can be i nterpreted very wel l v i a dangl i ng bonds , but not with fl oat i ng bonds . The presence of fl uori ne correl ates with the occurrence of l a rger mi crovo i d d i mens i ons .

1 7. Document Analysis

a. Descriptors • Photovo l ta1 c cel l s ; amorphous state ; s i l i con sol ar cel l s ·

semi conductor mater ia l s ; fl uoride ; german i um ; l abor�tory b. ldentifiers/Open-Ended Terms equ i pment ; nucl ear magnet i c resonaDc_e

c. UC Categories

271

1 8 . Availability Statement

Nat ional Techn i cal I n fo rmati o n Servi ce · U. S . Department of Commerce

5285 Port Royal Road S pr i n g fiel d , Vi rgi n i a 2 2161

1 9. No. of Pages

35

20. Price

9 A03

Document Control 1 1. SEA l Report No. 12. NTIS Access1on No.

Page SERI /STR- 211- 3353 4. Title and Subtitle

Amorphous S il icon Photovol taic Devices Prepared by Chemical and Photochemical Vapor Deposition of Higher Order S i l anes, Annual Subcontract Report , 1 September 1QRFi·-- 11 Annnc:t 1QQ7

7. Author(s)

A.E. Del ahov and H.E . Schade 9. Performing Organization Name and Address

Chronar Corporation Princeton , New Jersey 08542

12. Sponsonng Organization Name and Address

So l a r Energy Research I nstitute 161 7 Col e Bou l evard Go l den, Col orado 8040 1


3. Recipient's Access1on No.

5. Publication Date

June 1988 6.



11. Contract (C) or Grant (G) No.

(C) XB -5-!14092- 1 (G)

13. Type of Report & Period Coverea

Techn ical Report

14.

SERI Tec hnica l Monitor : B . Sta fford ( 303) 'd--31- /1?-/...P 16. Abstract (lim1t: 200 words)

Th is report des cribes resu lts of research on preparin g h igh - efficiency photovo l taic devices by photochemical vapor deposition of h igher order s il anes . The photostabil ity of these devices was compared to that o f devices produced by the gl ow-discharge technique. Hydrogenated amorphous silicon cel l efficiencies of at lea st 7.5% were obta ined us in g p-i-n struct ures and a l uminum back contacts. Us ing s il ver contacts increased the efficiency to about 8%. After 6 minutes of l ight soa kin g , there was no significant di fference between the photostabilities of these cel l s and those produced by g l ow disch arge. The efficiencies might be increased further if some rema ining probl ems can be addressed , such as by u s ing a different substrate preparation method or a h igher pumping s peed at the deposition chamber .


a. Descriptors •

Photovo l ta 1 c cel l s ; sil icon sol ar cel l s ; amorphous state ; efficiency


c. UC Categories 271


National Technical I nformation Service U . S . Department of Commerce 5285 Port Royal Road S pring fiel d� Virginia 22161

. Form No. 0069 (6-30-87)

1 9. No. of Pages

30

20. Price

A03

10 ----------L---------.1

r I (

r \ l

r t '

F i

r 'I I '

f t f I L r l \.

r ( '-

r (

{ l

r l l

Document Control 11. SEAl Report No. 1 2. NTIS Access1on No.

Page SER I /STR- 21 1 - 3354 tb£<i?<i?OOI I q / 4. Title and Subtitle

Preparat i on and Prope rt i es o f H i gh - De pos i t i on-Rate a-Si : H Fi l ms and So l a r Cel l s Us i ng Di s i l anes� Annual Subcontract Repo rt , 1 May 1987--30 Apri l 1988

7. Author(s)

P . K . Bha t , H . Chat ham , and A . Madan 9. Performing Organization Name and Address

Gl as stech Sol ar , Inc . Wheatri dge , Col orado 80033

12. Sponsoring Orgamzat1on Name and Address

Sol ar Energy Research Insti tute 1617 Col e Bou l evard Go l den , Col orado 80401- 3393


SERI Techn i ca l r.1on i tor: �J. Luft l3o3) ';;13/- 1�2..3 1 6. Abstract (limat: 200 words)

3. Rec1p1ent's Access1on No.

5. Publication Date

June 1 988 6.

8. Performmg Organization Rept. No.


1 1 . Contract ( C) or Grant (G) No.

CCl ZB-7-06002-1 (G)

1 3. Type of Report & Period Covered

14.

Th i s report conta i ns resu l ts of the fi rst year of research on produ c i n g p- i -n amorphous s i l i co n so l ar cel l s w ith the i ntri ns i c l ayer depo s i ted from h i gher order s i lanes at depos i ti on rates of 1 nm/s or mor e . The research was d i v i ded i nto three major areas: {1 ) d i agnost i c stu d i es of monos i l ane and d i s i l ane RF di scharges us i n g opti cal emi s s i on s pectroscopy and mas s spectrometry to ass i st i n opt i mi z i ng d i s charge cond i t i o ns and gas -phase proces ses ; ( 2 ) parametri c stu d i es o f materi a l propert i es of i - l ayers prepared from d i s i l ane as a fun�t i on of depos i t i on rate and other process parameters ; and ( 3 ) parametric studi es of p- i -n dev i ces with the i - l ayer prepared from d i s i l ane at vari ous depos i ti on rates . The focus dur i n g the fi rst year was to fabri cate a p- i -n solar ·cel l \'li th 9?& M11.5 effi c i ency over an area greater than 0 . 08 cm2 w i th the i - l ayer depos i ted at 1 nm/s or more . Materi a l pro pert i es such as the dark and AM1 . 5 l i ght conduct i v i t i es , opt i cal band gap, and conduct i v i ty act i vat io n energy showed a weak dependence on depo s i ti o n rate . The perfo rmance characteri s t i cs of unopt i mi zed p- i -n sol ar cel l s wi th i - l ayers prepared from di s i l ane were i ndependent of the depo s i t i on rate of the i - l ayer . A p- i -n dev i ce was prepared at a rate cl ose to 1 nm/s with an AM1.5 effi c i ency of 9%.


a. Descriptors

Photovol ta i c cel l s ; s i l i co n sol ar cel l s ; amorphous state ; depo s i t ion

b . Identifiers/Open-Ended Terms

c. UC Categories

271


Nati onal Techn i ca l I nforma t i o n Serv i ce U�S. Department o f Commerce 5285 Port Royal Road Spr i ngfi el d , V i rgi n i a 22161

1 1

1 9. No. of Pages

38

20. Price

A0 3

Document Control 11. SEAl Report No. ,2. NTIS Accession No. • .J 3. Recipient's Accession No.

Page SERI /STR-211-3174 2) E 'b 7 00 II g<t 4. Title and Subtitle 5. Publication Date

CuinSe Sol ar Cel l Resea rch by Sputter Deposition, Annual 2Subcontract Report, 1 January 1986 -3 1 December 1 986

7. Author(s)

J. A . Thornton , T. C . Lomma s son , and H. Tal ieh 9. Performing Organization Name and Address

Coordinated Science Laboratory University of I l l inois Urbana, I l l inois 61801

12. Sponsoring Organization Name and Address Sol ar Energy Research I nstitute A Div ision of Midwest Research I nstitu te 161 7 Col e Boul evard Gol den Col orr�rl(\ An4.nl-11Q1


Technical Monitor : H . S . Ul l al (3D3) �3/- 134/

June 1 9 8 7 6.



3494 . 100 1 1 . Contract (C) or Grant (G) No.

(C) Xl-5-041 31-1 (G)


Technical Report 14.

16. Abstract(Limit::zoowordsl This report contains resul ts of research on CuinSe sola r cells by spu tter depositio n . Most of the Cuin se2/CdS devices fabricated f�om CuinSe deposited by reactive sputtering have been characterized by rel ative l y l ow ope�circuit vol tages . Typical valu es range from 0 . 22 to 0 . 32 V . A contributing factor may be the l ower I n composition in the top l ayer of composite two-l ayer CuinSe fil ms ( Cu-rich base l ayer, I n -rich top l ayer) that we u sed in cel l fabrication? The reason for the l ower I n content i s an I n rej ection process occu rring du ring deposition at el evated temperatu res . Therefore, the maj or empha sis of this work was to increase the I n content in the top l ayer of CuinSe fil ms deposited in composite two-l ayer configu rations on Mo-coated, g1ass2 �ubstrates . Va riations in the rel ative currents to the Cu and I n sputtering sou rces , the H?Se inj ection rate, and the substrate temperature were explored . A temperature decrease from 450° to 400°C increased the I n compositio n from 25 a t . % to about 27 at. % . A second approach, in which the I n sputteri ng sou rce was operated for a short time with no Cu sputtering, al so yiel ded promising resu lts .


a.Descriptors Photovol taic cel l s ; copper sel enide sol ar cel l s ; deposition ; th in fil ms


c. UC Categories

63


National Technical I nforma tion Serv ice U . S . Department of Commerce 528 5 Port Royal Road Springfiel d, Virginia 221 6 1

Form No. 0069 (3-25-82)

19. No. of Pages

88

20. Price

AOS

12

r t r t

f \ l

( '

r

. r l ( I L

Document Control ,1. SEAl Report No. , 2. NTIS Accession No.

Page SER I /STR- 21 1 - 3 190 4. Title and Subtitle

Preparati on and Propert ies of Eva porated CdTe Fi l ms , Fi nal Subcontract Report , 1 6 February 1985 -31 March 1987

7 . .Au�t'lor�) K.H •. tlube , A. L . Fahrenbru c h , K . F . C h i en


Department of Mater i a l s Sci ence and Engi neering Stanford Un i vers i ty Sta n ford , Ca l i forn i a 94305


Sol ar Energy Research I n sti tute 1617 Col e Boul evard Gol den , Col orado 80401


SERI Techn i ca l Mon i tor: Ri chard Mi tchel l

1 6. Abstract (Limit: 200 words)


5. Publication Date

July 1987 6.



3494 . 10 11 . Contract (C) or Grant (G) No.

(C)XL-4-04022- 1 (G)


Techn i ca l Report 14.

Previ ous work on evapo rated CdTe fi l ms for photovol ta i cs showed n o cl ear path to successful p-type dopi ng of CdTe dur i n g depos i t i on . Post-depos i t i on anneal i ng o f the fi l ms i n var i ous ambi ents thus was exami ned as a means of dopi ng . Annea l s were done i n Te , Cd , P , and As vapors and i n vacuum , a i r , and Ar , a l l o f wh i ch s howed l arge e ffects o n ser i e s res i stance and d i ode parameters . With As , ser i es res i stance val ues o f I n/p-CdTe/gra ph i te structures decreased markedl y . Thi s decrease was due to a decrease i n gra i n boundary and/or back contact barr i er hei ght , and thus was due to l arge i ncreases i n mob i l i ty ; the carri er dens i ty was not al tered substanti a l l y . Al though the ser i es-res i stance decreases were s ubstanti al , the d i ode characteri sti cs became wors e. The decreases were not observed when CdS/ CdTe cel l s were fabri cated on Te vapor-annea l ed fi l ms . Preparati on of ZnO fi l ms by reacti v e evaporat i on y i el ded promi s i ng resu l ts . Depos i tion of p- ZnTe f i l ms by hot-wal l v apor evaporat ion , us i ng conventi onal techn i ques , y i el ded acce�tabl e fi l ms wi thout i ntenti onal dop i n g .


a. Descriptors

Photovol ta i c cel l s ; th i n fi l ms ; cadmi um tel l uri de s o l ar cel l s ; depos i t i on


c. UC Categories

63


Nati onal Techn i cal I n formation Servi ce U . S. Department of Commerce 5285 Port Royal Roa d Springfi el d , V i rg i n i a 2 2 1 61

Form No. 0069 (3-25-82)

1 9. No. of Pages

52

20. Price

A04

13

Document Control 11. SEAl Report No.

Page l SERI/STR-211-3215 4. Title and Subtitle

1_2. NTIS Accession No.

IJJG �)< () 0! I '5c( Device Physics Related to the Granular Nature of CuinSe

2 Solar Cells, Annual Subcontract Report,

1 April 1986 - 31 March 1987

7. Author(s)

J. R. Sites 9. Performing Organization Name and Address

Department of Physics Colorado State University Fort Collins, Colorado 80523


Solar Energy Research Institute A Division of Midwest Research Institute 1617 Cole Boulevard Golden, Colorado 80401-3393


Technical Monitor: H. S. Ullal ( .3D 3\ ':)._ 3 I- I� tf J 1 6. Abstract (Limit: 200 words)


5. Publication Date

February 1988

6.



PV740301 11 . Contract (C) or Grant (G) No.

(C) XL-6-06035-1

(G)



Several aspects of the impact of CuinSe2

polycrystallinity on solar cell performance were investigated. Reflection measurements on a variety of CuinSe

2 layers and

completed cells show large variations in both the magnitude and angular distribution of scattered light. Localized illumination reveals spatial variations in photovoltaic response which imply collection losses as high as 10%. Capacitance studies allow extraction of the density of extraneous electronic states at the diode junction. These decrease in reverse bias but increase under illumination and, hence, forward bias. A physical model of polycrystalline CuinSe

2 is presented, and finally the

status of CuinSe2

cells is analyzed in terms of tfie extent to which various factors are limiting performance.


a. Descriptors Photovoltaic cells ; copper indium diselenide solar cells ; efficiency ; thin films


c. UC Categories

273

18. Availability Statement National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road Springfield, Virginia 22161

Form No. 0069 (6-30-87) 14

1 9. No. of Pages

24

20. Price

A02

r ! \_

r lo l

r l

'

l f

{

l

r 0 l L

( I L

Document Control , 1. SEAl Report No. ,2. NTIS Accession No.

Page SERI /STR- 2 1 1- 321 6 4. Title and Subtitle

Growth and Characteri zat i on of Th i n Fi l ms of ZnSnP2, Fi nal Subcontract Report , 1 5 October 1983 -- 31 May 1987

7. Author(s)

P . K . Ajmera and H . Y. Sh i n 9. Performing Organization Name and Address

Department of El ectri cal and Computer Engi neeri ng Lou i s i ana State Univers i ty Baton Rou ge , Lou i s i ana 7 0803


Sol a r Energy Research Insti tute 1 61 7 Col e Boul evard Gol den, Col orado 80401- 3 39 3


SERI Techn i cal Mon i to r: R . Mi tchel l 16. Abstract (Limit: 200 words)


5. Publication Date

February 1988 6.


10. ProjecVTask/Work Unit No.

PV840601 11. Contract (C) or Grant (G) No.

(C) XL-4-03032-2 (G)


Techni cal Subcontract R�nnrt

14.

Th i s research i nvol ved the vacuum depos i t i on of thi n fi l ms of ZnSnP2 . Th i s ternary chal copyri te sem i conductor has a di rect energy ga p of 1 . 66 eV . Its constituent el ements , z i nc and phos phorus , are pl enti ful i n the U . S . and t i n i s read i l y ava i l ab l e from abroad . Thi s makes ZnSn P2 an attracti v e material for l ow-cost terrestria l photovol ta i c appl i cat i ons . Growt h cond i ti ons were experimental l y determ i ned to obta i n near-sto i ch i ometri c vacuum growth of th i n fi l ms of ZnSnP2 on GaAs , quartz , and mol ybdenum substrates uti l i z i n g el ementa l s ources . The grown fi l ms were characterized-by chem i cal , el ectri cal , and opti cal measurements and by morphol ogi cal stu d i es . Attempts were made to fabri cate s impl e heterostructure devi ces on the grown l ayers . Th i s research prov i des i nformati on on the rel evant propert i e s o f vacuum-grown th i n fi l ms of ZnSnP2 for i ts potent ia l appl i cati on i n pol ycrystal l i ne t h i n - fi l m PV dev i ces .


a. Descriptors Photovo l ta i c ce 11 s ; thi n fi l ms ; semi conductor materi a 1 s ; depo s i t i on


c. UC Categories

273


Nat i onal Techni ca l I n formati on Serv i ce U . S . Department o f Commerce 5285 Port Royal Road S pr i n g fi e l d , V i rgi n i a 2 2 1 6 1

Form No. 0069 (6-30-87)

19. No. of Pages

69

20 . Price

A04

15

Document Control , , . SEAl Report No. 1 2. NTIS Accession N�/ Page SERI/STR- 211- 3217 l ')t:�L!/ I/�

4. Title and Subtitle

CdZnTe as a Wide-Band- Gap Absorber for a Tandem, ThinFi l m Sol ar Cel l , Fi nal Subcontract Re port, 1 Apri l 1986-31 Au gust 19 87

7 . Author(s)

K. R. Zan i o 9. Performing Organization Name and Address

Ford Aeros pace and Communi cati ons Corpo rati on Newport Beach, CA 9 2658


Solar En ergy Research Institute A Divis ion of Mi dwest Research I nstitute 1617 Col e Bou l evard Gol den, Col orado 80401- 3393


Techn i cal Mon i tor : Ri chard Mitche l l 1 6. Abstract (Limit: 200 words)


5. Publication Date

October 19 87 6.



PV740601 1 1 . Contract (C) o r Grant (G) No.

(C) XL-5-04074-08 (G)

13. Type of Report & Penod Covered

Technical Report 1 4 . .

The objective o f t h i s program was to prepare by l ow-cost ul tra- high-vacuum (UHV ) methods a n al l -th i n-fi l m (approximate l y 1 . 6 eV) wide- ban dga p sol ar cel l using CdZnTe as the abso rber l ayer . ZnTe / CdZnTe/n- CdS/ITO/glass structures were pre pared by con gruent evaporat i on i n UHV . Ohmic contact to the ZnTe with HgZnTe and conve rsion of the h i gh-res istivity ZnTe and CdZnTe was simul taneous l y undertaken by the cl osed-s pace vapor de pos i tion of HgZnTe . Mes a structures did not show bl ockin g act i on . S i n gl e-crystal cel l s were prepa red by the depos i t i on of CdS o n bu l k p-CdTe ancl th i n- fi l m, s ingl e- crystal p- CdTe-on-s apph i re and p· - CdZnTe-on-sapph i re . A comparison of res u l ts suggests that the al l -th i n-fi l m pol ycrystal line structure is l imi ted by the CdZnTe .


a. Descriptors Photo vo l taic cel ls ; cadmi um tel l uride sol ar cel l s ; thin fil ms ;

crysta l growth ; energy ga ps b. Identifiers/Open-Ended Terms

c. UC Categories

6 3


Nati onal Techn i cal I n format i o n Service U . S . Depa rtment o f Commerce 5285 Port Royal Road S pri n g fi el d, V i rg i n i a 22161

Form No. 0069 16-30-871 16

1 9. No. of Pages

14

20. Price

A02

[

f '

f

f \ \_

[ L

Document Control 11 . SEAl Report No. ,2. NTIS Accession No.

Page SERI/STR-211-3218


MOCVD Techniques for CdTe Solar Cells� Final Subcontract Report, 15 February 1985-1 April 1987

7. Author(s)

D. E. Schafer


Honeywell Physical Sciences Center Bloomington� Minnesota 55420


Solar Energy Research Institute 1617 Cole Boulevard Golden� Colorado 80401-3393


SERI Technical Monitor: R. Mitchell



5. Publication Date

February 1988

6.




(C) XL- 5-0407 4-4

(G)



This report summarizes the application of metal-organic chemical vapor deposition (MOCVD) film growth to two aspects of CdTe/ITO solar cell fabrication: (1) the growth of large-area CdTe films on ITO, and (2) the formation of low-resistance ohmic contacts to p-type CdTe. A reduced-temperature MOCVD process was developed for the deposition of CdTe films in order to minimize the potential for chemical and physical changes in the ITO layer during cell fabrication. MOCVD growth of HgTe and ZnTe were developed for fabrication of ohmic contacts (opaque and iongwavelength transparent, respectively) to the CdTe layer of the photovoltaic structure. This report details the HOCVD reactor geometries and process parameters used in the development of the CdTe� HgTe, and ZnTe layer growth, as well as the results of C-V analysis of the carrier concentration in the MOCVD CdTe layers and resistance characteristics of various interfaces formed by CdTe, HgTe� and ZnTe.


a. Descriptors Photovoltaic cells ; cadmium telluride solar cells ; thin films ; chemical vapor deposition


c. UC Categories

273


National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road Springfield, Virginia 22161

.. �-- ... _ �ft II!!!-"""' ft�'

19. No. of Pages

49

20. Price

A03

17

Document Control 1 1. SEAt Report No.

Page S ERI /STR- 2 1 1- 3 229 4. Title and Subtitle

1 2. NTIS Accession No.

_])� &g 0 0 I I 'if '"=5 Th i n- Fi l m Cadm i um Tel l ur i de So l a r Cel l s , Annual Subcontract Report , 1 May 1986- 31 May 1987

7. Author(s)

T . L. Ch u 9. Performing Organization Name and Address Southern Method i s t Uni vers i ty Da l l as , Texas 75275


So l ar Energy Research Insti tute 1617 Col e Boul evard Gol den , Col orado 80401



5. Publication Date October 1987

6.




(C) Xl- 5-05039� 1 (G)


Tech n i ca l Repo rt

1 4.

SERI Techn i ca l Mon i tor : H . S . Ull al ( 3o3 } :2 3 / - 1 '6 1 / 1 6. Abstract (Limit: 200 words)

Cadmi um tel l ur i de , wi th a room-temperature band-gap energy o f 1 . 5 eV , i s a promi s i ng th i n- fi l m photovol ta i c materi al . The major objecti ve of th i s research has been to demonstrat2 th i n- fi l m CdTe heteroj uncti on s o l ar cel l s wi th a tota l area greater than 1 em and photovo l ta i c effi ci enc i es of 1 3% or more . Th i n- fi l m p- CdTe/CdS/Sn02 : F/gl ass sol ar cel l s w i th a n AM1 . 5 effi c i ency o f 1 0 . 5% have been reported prev i o us l y . Th i s report conta i n s resul ts of work done on ( 1 ) the depos i ti on , res i st i v i ty contro l , and characteri zat i on o f p- CdTe fi l ms by the cl ose-spaced sub l i mati on proces s ; ( 2 ) the depos i t i on of l a rge-band-gap wi ndow mater i al s ; ( 3 ) the el ectri ca l properti es of CdS/CdTe heterojunct i ons ; ( 4 ) the

format i on of stab l e , reproduc i bl e , ohmi c contacts ( s uch as p- HgTe ) to p-CdTe ; and ( 5 ) the preparation and eva l uati on o f h eteroj unct i on so l ar cel l s .


a. Descriptors

Photovo l ta i c cel l s ; cadmi um tel l uri de sol ar cel l s ; th i n fi l ms ; depo s i t i o n


c. UC Categories

63


Nat i onal Techn i ca l I n format ion Serv i ce U . S . Depa rtment o f Commerce 5285 Port Roya l Road Spri ngfi el d , Vi rg i n i a 22161

Form No. 0069 (3-25-82)

1 9. No. of Pages

3 3

20. Price

A03

18

\ ! '

f ' I

r

f l

f j: t

f f

i L

Document Control 1 1. SEAl Report No. I . 2. NTIS Accession No. 3. Recipient's Accession No.

Page SERI /STR-2 1 1 -3 2 3 0 1-)E i�D O I I ;;._?-4. Title and Subtitle

Cadmium Sulf ide/ Copper Ternary Heteroj unct ion Cell Res earch, Final Subcontract Report , 1 October 1 984-3 1 May 1 987

7. Author(s)

\-1 . E . Devanev . et al . 9. Performing Organization Name and Address

B o e ing H igh Technology Center S eattl e , Washington 98 1 24-6269


So lar Energy Research Inst itut e 1 61 7 Cole Boulevard Golden , Colorado 8 04 0 1

5 . Publication Date

November 1 98 7 6.



PV74 03 0 1 1 1 . Contract (C) or Grant (G) No.

(C) ZL-4-04 068-1 (G)


Technical Report 1 4.


SERI Technical Monitor : H . S . Ullal ( 3o 3) d 3 ) - /BJ / 1 6. Abstract (Limit: 200 words)

This is the F inal Techn ical Report on a 3 2 -month study of CuinS e2- and CuinGaS e2-�as ed thin-f ilm polycrystall ine heterojunc t ion so lar cell s . CuinGaS e2 f ilms incorporating Ga f rac t ions (x in Cuin1 _ Ga S e2) from 0 . 04 to 1 . 0 wer e prepared and character ized . CuinGaS e2 / CdZnS heteroj�nction dev ices were fabricated for a rang e · of Ga contents and show the expec ted variat ions in V and spec tral response with Ga cont ent . A 1 0 . 2% eff ic iency (S o lar Energy Researgfi Inst itute ( SERI). tes t , Amer ican S oc iety for Tes t ing and Materials (ASTM) 8.7 ) was measured for a cell with Ga frac t ion of 0 . 23 , the highest eff ic iency r eported . A Cuzns e2/ CdZnS monol ithically int erconnec t ed four-cell s er ies str ing 9 1 em in ar ea was fabricated with 9 . 5% .total area eff iciency (SERI tes t , AS TM8 7 ) . Results are presented on ionass isted deposition of the s elenide and sulf id e , a new des ign f or the S e evaporation source, ind ium-tin oxide r eac t iv e sputter d epos ition , and CdZnS f ilms prepared from an E-gun evaporation source . S pectral r esponse and current-voltag e charac ter istic var iat ions with sel enid e composition before and af ter heat tr eatment ar e d iscussed for the CuinSe2 / CdZnS dev ices . The highest AM1 total area ef f ic iency for the CuinSe 2/CdZnS cell is now 1 1 . 9% (Bo e ing tes t , AM1 spectrum) , with f iv e c ells measured over the pr eviously r eported high of 1 0 . 9% . 1 7. Document Analysis

a. Descriptors

Photovoltaic cells ; thin films ; copper s elenide solar cells ; depo sition


c. UC Categories

63


Nat ional Technical Inf ormation S erv i.c e U . S . D epartment of Commerce 5 2 8 5 Port Royal Road Springf ield , V irgin ia 2 2 1 61

Form No. 0069 (3·25-82)

19. No. of Pages

1 3 0

20. Price

A07

19

Document Co ntrol , , . SEAl Report No. , 2. NTIS Accession No.

Page S ERI/STR- 211 - 3249 p £5S q(JO /( / {� 3. Recipient's Access1on No.


Stabl e , H i gh-Effi c i ency , Cu i nSe2-Based , Pol ycrystal l i ne October 1 987 Th i n- Fi l m Tandem Sol ar Cel l s , F1 na l Subcontract Re port , � 1 6 March 1 984 - 1 5 March 1 987

7 . Author(s)

R . W . B i rkmi re and J . E . Ph i l l i ps 9. Performing Organization Name and Address

Insti tute o f Ene rgy Convers i on Un i vers i ty of Del aware Newark , De l aware

12 . Sponsoring Organization Name and Address

Sol ar Energy Research Insti tute A Di vi s i on of Mi dwest Research Inst itute 1 61 7 Col e Bou l evard Gol den , Col orado 80401 - 3393





(C) Xl-4-04025- 1 (G)


Techni cal Re port 1 4.

Techn i ca l Mon i tor : Ri ch ard Mi tchell ( 3 0 3) 9-3 I � 1 .3 ·7 9· 16. Abstract (Limit: 200 words) The l ong-term object i ve of th i s researc h was to obta 1 n a stabl e , th i n- fi l m sol ar cel l based on pol ycrystal l i ne materia l s wi th an e ffi c i ency o f 1 5% . The approach was to make a tandem cel l based on Cu i nse2/ CdS as the bottom cel l and CdTe/CdS as the top cel l . An essenti al feature was to deve l op a CdTe ce l l wi th trans parent contacts . A s u i tabl e contact i ng system was devel oped u s i ng trans parent conducti ng ?xi des � I:o a�d SnO? ) i n con j un ct i on wi t� a th i n � aye: of copper . Cel l s we re made w1 th eff1 c1 enc1 es over 8 . 5% . A reproduc1 bl e fabr1 cat 1 on process for Cu inSe 2/ ( CdZn ) S cel l s was deve l oped based on Cu i nSe? fi l ms grown by vacuum evaporati on us i n g Knudsen-type e ffus i on sources . These cel l s were made w ith e ffi ci enci es over 1 0% . The compos i t i on of the C u i nSe 7 fi l ms can be varied over a cons i derabl e ran ge and sti l l y ie l d h i gh-effi c i ency ce Tl s . Addi ng Zn to the CdS d i d not i ncrease the V of the devi ces ; anal ys i s showed that the V is not control l ed by i nterface recom8fnat i on . The effect o f o x i d i z ing and reduci R§ heat treatments on Cu i nSe2 cel l s i s to change carri er concentrat i on and thus V . Ana l ys i s suggests that � i s con trol l ed by band-to- band recombi nat i on . Monol��h i c tandem Cu i nSe 2 CdTe ce1 9 s have been made wi th e ffi ci enci es o f - 3% , demonstrat i ng the feas i bi l i ty o f th i s ap proach .


a. Descriptors

Photovol ta i c ce l l s ; copper sel en i de sol ar cel l s ; th i n fi l ms ; effi c i ency


c. UC Categories

63


Nat i onal Techn i ca l I n formati on Serv i ce U . S . De partment of Commerce 5285 Port Royal Road Spr i ngfi el d , V i rgi n i a 2 21 6 1

1 9. No. of Pages

122

20. Price

A06 2Q ____________ ._ ______________ ___

l

f t

f "

l

Document Contr ol , 1 . SEAl Report No.

Page SERI/ STR-211- 3289


j 2. NTIS Accession No.

riJt:. 'S � DC I J b c'J

Ternary Adamantine Materials for Low-Cost Solar Cells, Final Subcontract Report, 1 November 1984-31 December 1986

7. Author(s)

D. Cahen and G. Hodes


Weizmann Institute of Science Rehovot, Israel


Solar Energy Research Institute 16 17 Cole Boulevard Golden, Colorado 80401-3393


SERI Technical Monitor: H. S. Ullal 16. Abstract (Limit; 200 words)


5. Publication Date

Feb ruary 1988

6.



PV7ld)101 1 1 . Contract (C) or Grant (G) No.

(C) IL-5 -04132-1

(G)


Technical Report

1 4.

Several methods were investigated to prepare Cui nS( e) 2, using el ectroplating techniques near room temperature, to explore them for obtaining photovoltaically active films. No significant photoactivity resulted, unl ess an annealing step ( at greater than or equal to 400°C) was added to the process. Promising PV activity was found only if this anneal was carried out in a S ( e) -containing atmosphere. Therefore, in part of this proj ect, the two steps, metal deposition and chalcogen incorporation, were separated. These experiments showed that chalcogeni zation is the most critical step in obtaining films that are PV active. The composition· . o f the films obtained after the chalcogenization step can b e varied considerabl y b y a chemical , postanneali ng treatment. PV activity of films was checked i n a simpl e, rapid way by sputtering Cd onto them. Both these j unctions, as well as those obtained by ITO deposition, show improved rectification and PV activity, after air anneal of the chal cogenized film, before j unction formation. Possible causes for this are discussed. Separate C-V experiments on Al /CuinSe2/Mo structures, using Cui nSe2/Mo films, provided direct evidence of the persistence of two types of Cui nSe2 layers, distinquishabl e by their doping concentration.


a. Descriptors Photovoltaic cell s ; thin fil ms ; copper indium diselenide solar cells ; chalcogenides ; anneal ing


c. UC Categories

273


National Technical Information Service U. S. Department of Commerce 5285 Port Royal Road Springfield, Virginia 22161

�------------------------------ 21 . Form No. 0069 (6-30-87)

19. No. of Pages

44

20. Price

A03

Document Control l, · SEAl Report No.

Page �ERI /STR- 21 1- 3365 4. Title and Subtitle

Th i n-Fi l m Cadmi um Tel l uri de Sol ar Cel l s , Fi nal Subcontract Report , 1 May 1985--31 May 1988

1. Author(s)

T . L. Chu 9. Performing Organization Name and Address

Southern Method i st Un i vers i ty Dal l as , Texas 75275

12. Sponsoring Orgamzation Name and Address

Sol ar Energy Research Insti tute 1617 Col e Boul eva rd Goden , Col orado 80401-3393


3. Recipient"s Accession No.

5. Publication Date

June 1988 6.


10. Project/Task/Work Umt No.

11 . Contract (C) or Grant (G) No.

(CJ XL-5-050390-1 (G)

13. Type of Report & Period Covered Techn i ca l Report

1 4.

SERI Techn i ca l Mon i tor : H . S . Ul l a l - (3o£�) 2·3 1 - 1 '24/ 16. Abstract (Limit: 200 words)

Th i s report descri bes res u l ts of research performed to demonstrate t h i n - fi l m cadmi um tel l uri de heterojunct i on s o l a r cel l s w ith a total area greater than 1 cm2 and effi c i enci es o f 13% or h i ghe r . Efforts were d i rected to ( 1 ) the depos i t i on , res i st i v i ty control , and characteri zat i o n o f p-CdTe fi l ms by comb i n i ng the vapor of the el ements ( CV E ) and cl ose-s paced s ub l i mat i on ( CSS ) techn i ques ; ( 2 ) the depo s i t ion and characteri zat i on of trans parent conducti ng semi conductors : ( 3 ) the depo s i t i on o f p-HgTe as a l ow-res i stance ohmi c contact to p- CdTe ; ( 4 ) the el ectri cal pro pert i es o f CdS/CdTe h eterojuncti ons ; and {5) the preparat i on and eva l uat i on of heteroj unct i o n sol ar cel l s . CdS/ CdTe so l ar cel l s showed the best photovo l ta i c characteri sti cs , and the best cel l had a convers i o n effi c i ency o f about 10 . 6% .

[

f f I_

f f: I

' ""i 17. Document Analysis 1�

a. Descriptors

Photovo l ta ic cel l s ; cadmi um tel l ur i de sol ar cel l s ; th i n fi l ms ; h eteroj unct i ons


c. UC Categories

273


Nati onal Techn i cal I nformat i on Serv i ce U . S . Department of Commerce 5285 Port Royal Road Springfiel d , Vi rg i n i a 22161

1 9. No. ot Pages

44

20. Price

A03

22 1 --------1----------'

i I L

r

Document Control 1 1 . SEAl Report No. 1 2. NTIS Accession No.

Page SERI / STR-21 1 -31 88 Dc<:J 7 0 [ ·:;;.. d-/.oD 4. Title and Subtitle

Gal l i um Arsen i de and Mu l ti bandgap Sol a r Cel l Research , Fi nal Subcontract Report , Apri l 1 984 - Apri l 1 986

7. Author(s)

S . M . Vernon . S . P . Tob i n and R . G . Wol fson 9. Performing Organization Name and Address

Spi re Corpo rati on Bedford , MA 01 730


Sol a r Energy Research I n s ti tute A D i vi si on of Mi dwest Research I n sti tute 1 61 7 Col e Boul evard Gol den , Col o rado 80401 -3393



5. Publication Date

Jul v 1 987 6. 8. Performing Organization Rept. No.



(Cl Xl-4-04024-1 (G)


Techn i cal Report 14.

Techn ical Mon i to r : Cec i l e Leboeuf ( 3 o �) :2 � i - 1 0 0 � 16. Abstract (Limit: 200 words)

Thi s report presents resul ts of research i n h i gh-effi c i ency , l ow-cost sol ar cel l s , emphas i z ing heteroep i taxi a l growth o f a I I I - V compound materia l onto a s i ngl ecrysta l s i l i con wa fer . The report descri bes the start- up and characteri zati on of a new meta l -organic vapor depo s i ti on (MOCVD ) reactor for the growth of GaAs , GaAl As , and GaAs P on 2- i n . -d i ameter substrates wi th excel l ent uni formity ; o ptimi zati on o f the growth o f Ge fi l ms o n S i by a s impl e CVD techni qu e ; and product ion of a 9% effi c i ent GaAs-on-Ge-on-Si sol ar cel l . The advancements i n the understandi ng of the GaAs -on-Si growth process and i n the qua l i ty of the fi l ms are descri bed . The work a l s o i nc l uded producti on of a 7% effi c i ent GaAs-on-Si cel l ; devel opment o f a GaAs P-on-GaAs growth technol ogy ; producti on o f a 16 .5% effi ci ent GaAs P cel l and a 17 . 7% effi ci ent GaAl As cel l on GaAs ; and product i on of 'a 20 . 8% effi c i ent GaAs -on-GaAs cel l . Al s o descri bed are improvements i n cel l proces s i ng technol ogi es , i ncl ud i ng the use of a doubl e-l ayer anti refl ecti on coat i ng .


a. Descriptors Photovo l ta i c cel l s ; s i l i con sol ar cel l s ; gal l i um arsen i de sol ar

cel l s ; chemi cal va por depos i t i on ; effi ci ency b. Identifiers/Open-Ended Terms

c. UC Categories

63


Nati onal Techn i cal I nformati on Serv i ce Department of Commerce 5285 Port Royal Road Spri ngfi el d , V i rg i n i a 221 61

�--�-------------------------- 23 C:nf"''ft Nn �Q fA-�7\

19. No. of Pages

57

20. Price

A04

Document Control , 1. SEAl Report No. , 2. NTIS Accession No. Page SERI /STR- 211- 3189 ]) E � l O l 'J.. -:l. iD 1



5. Publication Date

Ju ly 1987 Research on Mul t i bandga p Sol ar Cel l s , Fi nal Subcontract �6�.-----------------------� Report , 1 March 1984 - 3 1 January 1987

7 . Author(s) J . A . Ca pe , L . M . Fraas , P . S . Mcleod , l . D . Partai n


Chevron Research Company Ri chmond , Cal i forn i a 94802


Sol a r Energy Research Insti tute 1617 Co l e Boul evard Go l den , Col orado 80401



3496 . 20 11. Contract (C) or Grant (G) No.

(C) ZL-4-03123-1 (G)


Techn i cal Report 14.

15. Supplementary Notes SERI Techn i ca l Mon i tor : Cec i l e Leboeuf ( 3 D �) 0\ 3! - 1 o te ro


Th i s report des cri bes research i n mul ti bandgap sol ar cel l s . I n early work . two co l or sol ar cel l s wi th effi c i enc i es exceed i n g 20% were grown w.onol i th i ca 1 1 y , compri s i ng a GaAs P to p j unct i on over a GaAs or GaAsSb bottom j u nct i on . Res earcher attempted to understand the effects of l atti ce mi smatch and opti m i ze growth cond i t i ons for these structures . Severe unreproduci b i l i ty was encountered and traced to source materi al impur i t i es . CP2Mg , the p-do pant , was found to be undependabl e , and efforts were made to puri fy i t . Impur i ty effects were a l so traced to tne ars i ne ( predominantl y water va por ) and the gal l i um a l kyl s . Efforts were a l so made to pur i fy these . Work focused on optimi z i ng component cel l s o f GaAs P and GaAsSb and on devel o p i n g t h e growth process . Th i s , though , d i d not l ead to h i gher effi c i enci es . I n devel opi ng component cel l s , work was a l so done on optimi z i ng vacuum chem i ca l epi taxy growth condi t ions ( temperatures , fl ow rates , I I I -V rat i os , chamber des i gns , etc . ) ; on devel o p i ng cel l trans i ti o n l ayers and reduc i ng l att i ce-mi smatch effects ; on improv i ng cel l proces s i ng ; on reduc i n g i mpu r i t i e s ; and o n improvi ng materi al and cel l character i zat i o n .

1 7. Document Analysis a. Descriptors

Photovol ta i c cel l s ; ga l l i um arsen i de sol ar cel l s ; effi c i ency ; doped mater ia l s ; epi taxy


c. UC Categories

63


Nati onal Tech n i cal I nformati on Serv i ce U . S . Department o f Commerce 5285 Port Royal Road . S pr i ngfi el d , V i rg i n i a . 22161

Form No. 0069 (3-25-82)

1 9. No. of Pages

89

-. 20. Price

A05

24

r l f t

f t

! l

l

Document Control , 1 . SERI Report No. , 2. NTIS Accession No.

Page SERI /STR- 21 1 - 3224 ]) E <:j 'dDO I IJ 5 4. Title and Subtitle

Res earch on Si ng l e - Crystal CdTe Sol ar Cel l s, Fi nal Subcontract Report , 1 February 1985-1 February 1987

7. Author(s)

J . M � - Borrego , S . K . Ghandhi 9 . Perlorming Organization Name and Address

El e ctri cal , Computer , and Systems Engi neeri ng Department

Ren ssel aer Pol ytechn i c I nst i tute Troy , New York 1 21 80

1 2. Sponsoring Organization Name and Address Sol ar En ergy Research I nsti tute A Di v i s i on of Mi dwest Research I nsti tute 1 61 7 Col e Boul evard Gol den , Col orado 80401 - 3393



5. Publication Date

October 1 987 6.

8. Perlorming Organization Rept. No.


3497 . 1 0 1 1 . Contract (C) or Grant (G) No.

(C) ZL- 5 -04074- 2

(G)


Techni cal ReQort 1 4.

Techn i cal Mon i tor : Ri chard Mi tchel l ( "3 D� ) ;;). 3 / - 137 1 1 6. Abstract (Limit 200 words> Th i s re port outl i nes two years of work on the growth and char

acteri zati on of s i ng l e-crystal CdTe l ayers , to expl ore the i r potenti al for h i ghe ffi ci ency sol ar cel l s . It was demons trated that hi gh-qual i ty l ayers can be grown by organometa l l i c vapor phase epi taxy (OMVPE ) , whose photol umi nes cence peak has a FWHM of 5 . 8 meV , the l owest val ue for them yet achi eved . CdTe l ayers were extri ns i cal l y doped both n- and p-type wi th i nd i um and arsen i c , respect i vel y . The dop i ng l evel ach i eved for p-type i s the h i ghest yet reported i n the l i terature , achi eved for the fi rst t i me i n an OMVPE system . A hol e l i fet ime of 2 . 0 �m was measured . I n the n-type materi a l , fi ve dee p l evel s were i sol ated ; thei r capture cros s sect i on , ene rgy l evel , and concentrat i on were determi ned . A thermodynami c anal ys i s was made to i denti fy the i r de fect character . Both Schottky and p-n j unct i on dev i ces

-

were produced on these l ayers . The di ode characteri s t i cs were s u peri or to those of GaAs so th i s is a potent i al l y superi or materi al for sol ar cel l s .

17. Document Analysis a. Descriptors Photovol ta i c cel l s ; cadmi um tel l uri de sol ar cel l s ; sem i conducto r

materi al s ; Schottky barri er sol ar cel l s


c. UC Categories

63 1 8. Availability Statement

Nati onal Techn i cal I n formation Servi ce U . S . De partment o f Commerce 5 285 Port Royal Road Spr i n g fi e l d , Vi rg i n i a 221 6 1

19. No. of Pages

100

20. Price

25 ____________ ._--------------�

26

r � t.

f l

1: \

r l

f ! L

r i \.

ADDffiONAL PUBLICATIONS AND SOURCES

The following publications were produced under the DOE Photovoltaics Program or are widely available publications in which substantial DOE-supported work is reported. Those that and are available from the National Technical Information Service (NTIS) can be purchased with the NTIS order form provided hereafter.

Annual Report, Photovoltaic Measurements and Performance Branch, FY 1988. (January 1989). SERI/PR-213-3590. 160 pp. Available NTIS: Order No. DE89009500.

Annual Report, Photovoltaic Program Branch, FY 1988. (March 1989). SERI/PR-211-3483. 302 pp. Available NTIS: Order No. DE89000898.

Annual Report, Solid State Photovoltaic Research Branch, FY 1988. (July 1989). SERI/PR-212-3494. 265 pp. Available NTIS: Order No. DE89009463.

Conference Record of the Nineteenth IEEE Photovoltaic Specialists Conference - 1987; New Orleans, Louisiana: May 4-8, 1987. �1987). New York: The Institute of Electrical and Electronics Engineers, Inc.; 1530 pp. Available from IEEE, 345 E. 47th St., New York, NY 10017.

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference - 1988; Las Vegas, Nevada; September 26-30, 1988. (1988). New York: The Institute of Electrical and Electronics Engineers, Inc.; 2 Volumes, 1664 pp. Available from IEEE, 345 E. 47th St., New York, NY 10017.

Current Abstracts: Photovoltaic Energy. Electricity from Sunlight. Prepared by the Office of Scientific and Technical Information for the Office of Conservation and Renewable Energy, U. S. Department of Energy. Nov.-Dec. 1989, PB89-933006. Available from the Office of Scientific and Technical Information, P.O. Box 62, Oak Ridge, TN 3783 1.

Current Abstracts: Photovoltaic Energy. Electricity from Sunlight. Prepared by the Office of Scientific and Technical Information for the Office of Conservation and Renewable Energy, U. S. Department of Energy. Jan.-Feb. 1990, PB90-933001. Available from the Office of Scientific and Technical Information, P.O. Box 62, Oak Ridge, TN 3783 1.

Photovoltaic Energy Program Summacy, Volume I: Overview, Fiscal Year 1988. (January 1989). DOE/CH10093-40. Golden, CO: Solar Energy Research Institute; 15 pp. Prepared for the U.S. Department of Energy, Assistant Secretary, Conservation and Renewable Energy, Washington, DC, by the Solar Energy Research Institute, Golden, Colorado. Available NTIS: Order No. DE89000855.

Photovoltaic Energy Program Summacy, Volume II: Research Summaries Fiscal Year 1988. (January 1989). DOE/CH10093-39. Golden, CO: Solar Energy Research Institute; 188 pp. Prepared for the U.S. Department of Energy, Assistant Secretary, Conservation and

27

Renewable Energy, Washington, DC, by the Solar Energy Research Institute, Golden, Colorado. Available NTIS: Order No. DE89000832.

· ·

Photovoltaics: Entering the 1990s. (November 1989). SERI/SP-220-3461. 42 pp. Produced by the Development and Communications Office. Available NTIS: Order No. DE89009509.

Photovoltaics Technical Information Guide: Second Edition. (August 1988). SERI/SP-320-3328. 1 18 pp. Available NTIS: Order No. DE88001 184.

Riordan, C. J.; Hulstrom, R. L.; Cannon, T. W.; Stoffel, T. L.; Myers, D. R.; (February 1989). Photovoltaic Advanced Research and Development Project, Solar Radiation Research, Annual Report, 1 October 1987 - 30 September 1988. SERI/PR-215-3445. 24 pp. Available NTIS: Order No. DE89000884.

Ullal, H. S.; Zweibel, K. (December 1989). Progress in Thin Film Solar Photovoltaic Technologies. SERI/I'P-21 1-3604. 12 pp. Prepared for the 9th Miami International Congress on Energy and Environment, Miami Beach, Florida, 1 1-13 December 1989. Available NTIS: Order No. DE890095 13.

Ullal, H. S.; Zweibel, K.; Mitchell, R. L. (November 1989). U.S. Polyczystalline Thin Film Solar Cell Program. SERI{I'P-21 1-3595. 6 pp. Prepared for the Materials Research Society 1989 Fall Meeting, 27 November - 2 December 1989, Boston, Massachusetts. Available NTIS: Order No. DE89009506.

Ullal, H. S.; Zweibel, K.; Sabisky, E. S.; Surek, T. (August 1988). Solar Photovoltaic Technology: The Thin Film Option. SERI{I'P-211-3390. 10 pp. Presented at the AIChE Summer National Meeting, Denver, Colorado, 21-24 August 1988. Available NTIS: Order No. DE88001 195.

U.S. Photovoltaic Patents: 195 1-1987. (September 1988). SERI/SP-210-3357. 616 pp. Available NTIS: Order No. DE88001178.

Zweibel, K. (May 1989). Thin Film Photovoltaics. SERI!fP-21 1-3501. 7 pp. Prepared for the 24th Intersociety Energy Conversion Engineering Conference, Washington, D.C., 6-1 1 August 1989. Available NTIS: Order No. DE89009425.

28

f l

I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I

MAIL ORDER TO:

NTIS® U.S. DEPARTMENT OF COMMERCE National Technical Information Service Springfield. VA 221 6 1

NTI S O R D E R FO R M For OTIC Users Only EXPRESS/RUSH

Date ____________ __ OTIC User Code ----------(800) 336-4700

(703) 487-4700

(703) 487-4650

(703) 321 -8547

89-9405 PURCHASER:

Contract Number ---::-:-=-=-=--=-----:-:--(last 6 characters only)

REGULAR SERVICE TELECOPIER TELEX

BILLING OFFICE TELEPHONE:

ATTENTION: ________________________________ _

(Last Name)

(Company. Unoversoty. Agency)

(Bldg . Suote. Dept 1

!Street. P 0 Box)

u.s. {Coty) {State! {lop)

Foreign: ----------��---��--��--------tCoty. State or Provonce. Country)

SHIP TO: (Enter ONLY If different from address at left) ATTENTI ON: ____________________________ _

(Last Name) (ln!loal)

(Company. Unoversoty. Agency)

(Bldg . . Suote. Dept. )

(Street. P.O. Box)

u.s. (Coty) {Slate) {lop)

Foreign: ------------��----�----��-----------(C•Iy. State or Provonce. Country I

ORDERING OPTIONS: All Reg ular demand orders are shipped First Class Mail or equivalent service to all U.S. addresses. ( For First Class Mail or equivalent service to Canadian and Mexican addresses add $3 per item; for all other addresses add $6 per item.) You may also elect Express or Rush Service. For a $20 per item charge your Express order wi l l be processed with in 24 hours and del ivered by overn ight courier. For a $10 per i tem charge your Rush order wi l l be processed within 24 hours and mai led First Class Mail (or equivalent) or you may pick up your Rush order at NTIS within 24 hours for a $7.50 per item charge. • A Shipping and Han d l i ng fee must be applied to all Regular orders, but does not apply to Express. Rush or subscription orders.

USE THIS SECTION ONLY IF YOU KNOW THE DOCUMENT NUMBER. IF YOU ARE ORDERING BY TITLE, TURN THE PAGE. . .

USER QUANTITY

PRIORITY NTIS ORDER NUMBER ROUTING CODE Paper Micro- Other UNIT MAI L TOTAL

(See Reverse) Copy fiche (specify) PRICE SERVICES PRICE

1 .

2.

3.

4.

5.

6.

Shipping and Handling Fee ($3 domestic/$4 foreign)

METHOD OF PAYMENT Grand Total $ 0 Charge to NTIS Deposit Account No. _ _ __ ·- __ _

0 Check/money order enclosed for $ USE MEDIA CODES 0 Billing Charge (see reverse for restrictions and explanation)

. Employer identification number: _ _ _ ·-- __ ·- __ _ _ (!l digits) The two or three letters at the end of NTIS Order Numbers have been placed there to

Purc;:hase Order No. · · - - - . help NTIS marketers determine the most effective media in bringing various types

Charge to my 0 American Express 0 VISA 0 MasterCard of information to users' attention. Please

Account No. _ Expiration Date---------use the media codes when ordering. The

- · -·· information they provide is very helpful to NTIS and to its user community.

Signature: ..

USER ROUTING CODE: NTIS can label each 1tem for routing within your organ1zat1on. If you want th1s serv1ce put your rout1ng code ; n the b o x marked U S E R R O U T I N G C O D E ( Limit eight c haracters) .

BILLING SERVICE: T h i s service is restricted t o North American busi ness locations f o r a n extra $7.50 per order ( o r p e r Cu<>tom Searc h ) . The business employer identification n u m ber plus the phone nu mber of the office paymg the bill are required to process these requests. A late payment charge will be applied to all bil l ings more than 30 days overdue.

FOR TELEPHON E O R DERS, CALL THE NTIS SALES DESK - 703/487-4650.

ORDERING MAGNETIC TAPE: (check mode)

0 9 Track 0 800 bpi 0 1 600 bpi 0 6250 bpi (odd parity)

ORDERING BY TITLE: Use this section i f you do not know the document n u m ber. but you do know the title. Please give us as much i nformation as you can to help us to fi l l your order correctly.

Turn to the other S1de. Please wnte .. , .. an the NTIS Order Number block and complete tne rest at the hne

Number of Report

TITLE #2 wrue 2·· '" the NTIS Number block and complete the rest ot the hne

Sponsors Senes • Contract or Grant Number or Report

Or1gtnator (G1ve spec•hc laboratory. or d•v•s•on and locatton 1

Turn to the other Side Please wnte ··3·· '" the N T I S Order Number block and complele th� rest of the hne

Date Published

Turn to the other s1de Please wnte · ·4·· m the NTIS Order Number block and complete the rest ot tne I me

TITLE #5 Turn to tne other stde Please wnte s· m the N T I S Order Number block and c.Jrnplet� thP rPst of the ltne

Sponsors Seues • Contract or Grant Number of Report

Ortgznator (G•ve spec•flc laboratory. or d•v•s•on and locat•on '

F I l

I l.

r I L

�: t\· \)

·-l��

'�e·

Contacts: SERI Pbotovoltaic Program Branch Personnel

Task Area

PV Program Branch

Amorphous Silicon Research Project

High-Efficiency Concepts, Crystalline Silicon Materials, and University Program

Polycrystalline Thin Films

New Ideas Program

Contact Name Telephone*

Thomas Surek, Manager 231-1371 Kathy Summers, Admin. Assist. 231-1395 Thomas S. Basso 231-7035

William Wallace Werner Luft, Acting Manager Byron Stafford

John Benne� Manager Cecile Leboeuf Bushan Sopori

Kenneth Zweibel, Manager Richard Mitchell Harin Ullal

Richard Mitchell, Manager

(202) 586-7307 231-1823 231-7126

231-1396 231-1066 231-1383

23 1-7141 231-1379 231-1841

231-1379

*Area code.(303); FTS number 327-XXXX.

� - - - - - - - - - - - - - �� - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

"'� We are in the process of updating the mailing list for photovoltaic documents. If you would like to remain on the distribution list for this and other documents, please fill in the information below, detach the order form, and mail it to:

Photovoltaic Program Branch Solar Energy Research Institute 1617 Cole Blvd. Golden, CO 80401-3393

Name:

Company:

Mailing Address:

City, State:

Zip Code:

3 1

Date post:	29-Jun-2020
Category:	Documents
Upload:	others
View:	2 times
Download:	0 times

SERI Photovoltaic Subcontract Reports: 1988 Abstracts and … › docs › legosti › old ›...

Documents