16
Si APD (Avalanche Photodiodes) Si APD (Avalanche Photodiodes) SOLID STATE DIVISION Selection Guide Dec. 2011 High-speed, high-sensitivity photodiodes having an internal gain mechanism
Si APD (Avalanche Photodiodes) Si APD (Avalanche Photodiodes)
SOLIDSTATE DIVISION
Selection GuideD e c . 2 0 1 1
High-speed, high-sensitivity photodiodes having an internal gain mechanism
Si APD
Type Type no. Feature
APD modules
C5331 series Available for near infrared and short wavelength applications, and also with FC/SMA connector coupling, etc.
C5460 series High gain type for detection under low illuminance
C10508 Digital temperature-compensation, high-stability APD module
C4777 series
Standard type
High-sensitivity type
High-stability type
C5658 Operates over a wide range of frequency (up to 1 GHz)High-speed type
TE-cooled type High sensitivity type for low-light-level detection. Offers greatly improved stability by thermoelectric cooling.
HAMAMATSU Si APD
Si AVALANCHEPHOTODIODES
Si APD (Avalanche Photodiodes)
The APD is a highly sensitive photodiode that operates at high speeds and high
gain by applying a reverse bias. It has higher S/N than PIN photodiodes and is
widely used in optical rangefinders, spatial light transmission, scintillation detec-
tors, etc.
HAMAMATSU also provides compact APD modules that contain an APD, a low-
noise amplifier and a bias power supply.
Principle of avalanche multiplication
For detailed information and data on the products listed in this catalogue, see the datasheets that are available from our web site www.hamamatsu.com
When light enters a photodiode, if the light energy is higher than the band gap energy electron-hole pairs are generated. The ratio of the num-ber of generated electron-hole pairs to the number of incident photons is called the quantum efficiency or QE (usually expressed as a percen-tage). The process that generates those carriers inside an APD is the same as that in an ordinary photodiode. However, the APD has an inter-nal gain mechanism for amplifying the generated carriers.Among electron-hole pairs generated in the depletion layer of an APD with a reverse bias voltage is applied to the PN junction, the N+ side while the holes drift towards the P+ side due to the electric field developed across the PN junction. The drift speed of these carriers depends on the electric field strength. However, when the electric field is increased, the carriers are more likely to collide with the crystal lattice and scatter, saturating their speed at a certain level. If the reverse voltage is increased even further, some of the carriers which es-caped collision with the crystal lattice will have a great deal of energy. When these carriers collide with the crystal lattice, new electron-hole pairs are generated (ionization). These electron-hole pairs then create additional electron-hole pairs in a pro-cess like a chain reaction. This is a phenomenon referred to as avalanche multiplication.
Operating principle of APD
KAPDC0006EC
Generated carriers produce new electron-hole pairs while being accelerated by highelectric field. Ionization
Newly generated carriers are also acceleratedto produce further electron-hole pairs, and thisprocess repeats itself. Avalanche multiplication
Gain proportional to the applied reverse bias voltage can be obtained.
-
---- + +
+
+
-
- -
P+
P-
P
Highvoltage
N+
Avalanchelayer
Type Type no.Number
ofelements
Recommendedwavelength
(nm)
Peak sensitivitywavelength
(nm)Package Feature Application
Low bias operation
Low terminalcapacitance
200 to 650 620
800
800
860
960
600
1 Metal
1 Metal
1Ceramic
Metal
Surfacemounttype
Metal
32
S5343, S9073, etc.
S8664-K series
320 to 650
Low biasoperation
Lowtemperaturecoefficient
1000 nm band/high sensitivity
600 to 800
600 to 800
S8664-55/-1010
S8550
1S2381, etc.
1
1
S10341 series
S6045 series
Metal800 nm band, low terminal capacitance 800 to 1000
900 to 1150
1
Metal1
S9251 series
S11519 series
Nearinfraredtype
ShortWavelengthtype
Low-light-level detection
Analytical instruments
Enhanced sensitivity in the UV to visible range
Spatial light transmission Optical rangefinder Optical fiber communications
Optical rangefinder Laser radar Spatial light
transmission Spatial light transmission Optical rangefinder Optical fiber communications Optical rangefinder Laser radar YAG laser
detection
High sensitivity in near infra-red region and low bias vol-tage operation
Low cost and high reliability APD using surface-mount ceramic packages with the same wide operating temperature range (-20 to +85 ˚C) as metal package types
Easy voltage adjustment due to low temperature coeffi-cient of bias voltageEnhanced sensitivity in 800 nm bandLow bias (low operation voltage) type with enhanced sensitivity in 1000 nm band
Spectral response (Si APD)
KAPDB0096EF
Sensitivity vs. response speed (APD modules)
KACCB0115EC
Cutoff frequency vs. recommended wavelength (compared between Si APD with photosensitive area of 0.5 mm)
KAPDB0162EC
Wavelength (nm)
Pho
tose
nsiti
vity
(A/W
)
200 400
55
50
40
30
20
10
45
35
25
15
5
0600 800 1000 1200
Near infrared type(800 nm band, low terminal capacitance)
Near infrared type(low bias operation)
IR-enhanced type(1000 nm band/high sensitivity)
Near infrared type(low temperature coefficient)
Short wavelength type(low bias operation)
Short wavelength type(low terminal capacitance)
(Typ. Ta=25 ˚C, M=50, λ=650 nm)
Wavelength (nm)
Cut
off f
req
uenc
y (M
Hz)
2000
200
400
600
800
1000
400 600 800 1000 1200
High
Low
Short wavelength type(low bias operation)
Short wavelength type(low terminal capacitance)
Near infrared type(low bias operation, lowtemperature coefficient)
Near infrared type(1000 nm band/high sensitivity)
Near infrared type(800 nm band, low terminal capacitance)
DC103
104
105
106
107
109
1010
108
100 10 k10 1 k 100 k 1 M 10 M 100 M 1 G
2-stage thermoelectrically cooled APDDC to 5 kHz, -1.25 × 109 V/W
DC to 100 kHz-1.5 × 108 V/W
50 kHz to 1 GHz2.5 × 105 V/W
9 types are available with differentactive areas and wavelengths
4 kHz to 100 MHz-1 × 104 V/W
1-stage thermoelectricallycooled APD
10 kHz to 100 MHz-2.5 × 105 V/W
C4777-01
C5460-01
C5658
C5331 series C4777
DC to 10 MHz1.5 × 106 V/W
C5460
DC to 10 MHz2.5 × 105 to 1.25 × 107 V/W
C10508
Sen
sitiv
ity (V
/W) a
bso
lute
val
ue
Response speed (Hz)
1
Low bias operation
Type no. Package
Spectralresponse
range(nm)
Gainλ=650 nm
Terminalcapacitance
(pF)
Breakdownvoltage
max.ID=100 A
(V)
Temp.coefficient ofbreakdown
voltage(V/˚C)
Risetime
RL=50 Ω(ns)
S9075
S5344
S5345
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
200 to 1000 200 0.14 50
TO-18
TO-8
TO-5
900
400
250
100
25
8
2
5
15
30
120
320
0.4
0.9
1.5
3.5
14
45
These short-wavelength APDs are optimized for detection of UV to visible light. High gain and high sensitivity can be obtained in short wavelength regions, making these APDs suitable for low-light-level measurements such as in analytical instruments.
*1: Photosensitive area in which a typical gain can be obtained*2: Measured under conditions that the device is operated at the gain listed in the specification table
Spectral response Quantum efficiency vs. wavelength Gain vs. reverse voltage
KAPDB0010ED
20
30
0
10
Pho
tose
nsiti
vity
(A/W
)
(Typ. Ta=25 ˚C, λ=650 nm)
Wavelength (nm)
200 400 600 800 1000
M=10
M=20
M=50
KAPDB0023EB KAPDB0011EC
*2 *2
0
20
40
60
80
100
Qua
ntum
eff
icie
ncy
(%)
(Typ. Ta=25 ˚C)
Wavelength (nm)
200 400 600 800 1000
Gai
n
Reverse voltage (V)
103
102
101
100
(Typ. λ=650 nm)
130 160140 150
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
Short wavelength type Si APD
S12053-02NEW
S12053-05NEW
S12053-10NEW
CutofffrequencyRL=50 Ω
(MHz)
*2Effectivephotosensitive
area(mm)
*1
2
Low terminal capacitance
Type no. Package
Spectralresponse
range(nm)
Gainλ=420 nm
Terminalcapacitance
(pF)
Breakdownvoltage
max.ID=100 A
(V)
Temp.coefficient ofbreakdown
voltage(V/˚C)
Risetime
RL=50 Ω(ns)
S8664-02K φ0.2
S8664-05K φ0.5
S8664-10K φ1.0
S8664-20K φ2.0
S8664-30K φ3.0
S8664-50K φ5.0
S8664-55 5 × 5
S8664-1010 10 × 10
320 to 1000
320 to 1000
0.78500 50
TO-8
Ceramic
TO-5
700
680
530
280
140
60
40
11
0.5
0.52
0.66
1.3
2.5
6
9
32
0.8
1.6
4
11
22
55
80
270
Type no. Package
Spectralresponse
range(nm)
Gainλ=420 nm
Terminalcapacitance
(pF)
Breakdownvoltagemax.(V)
Temp.coefficient ofbreakdown
voltage(V/˚C)
S8550-021.6 × 1.6
(× 32 elements) Ceramic250 50500 0.7810
(per 1 element)
*1: Photosensitive area in which a typical gain can be obtained*2: Measured under conditions that the device is operated at the gain listed in the specification table
Spectral response
KAPDB0073EC
10
25
20
15
0
5
Pho
tose
nsiti
vity
(A/W
)
(Typ. M=50 at 420 nm)
Wavelength (nm)
200 400 600 800 1000 1200
S8664-02K/-05K/-10K/-20K/-30K/-50K
S8664-55/-1010S8550
Quantum efficiency vs. wavelength
KAPDB0125EA
Gain vs. reverse voltage
KAPDB0076EB
*2 *2
*2
40
100
80
60
0
20
Qua
ntum
eff
icie
ncy
(%)
Wavelength (nm)
200 400 600 800 1000 1200
(Typ. Ta=25 ˚C)
S8664-02K/-05K/-10K/-20K/-30K/-50K
S8664-55/-1010S8550
4 × 8 element array
1000(Typ. λ=420 nm)
1
100
10
Gai
n
Reverse voltage (V)
200 300 400 500
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
CutofffrequencyRL=50 Ω
(MHz)
*2
CutofffrequencyRL=50 Ω
(MHz)
*2
Effectivephotosensitive
area(mm)
*1
Effectivephotosensitive
area(mm)
*1
3
Near infrared type Si APD
Low bias operation
S3884
S2384
S2385
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
400 to 1000
100
60
40
200 0.65
600 6
400
120
40
10
40
95
1000 1
900 2
TO-18
TO-5
TO-8
Type no. Package
CutofffrequencyRL=50 Ω
(MHz)
Terminalcapacitance
(pF)
Spectralresponse
range(nm)
Gainλ=800 nm
Breakdownvoltage
max.ID=100 A
(V)
Temp.coefficient ofbreakdown
voltage(V/˚C)
1000
900
φ0.2
400 to 1000 200 0.65 100
1
2
Plastic
φ0.5
S10341-02
S10341-05
Type no. PackageTerminal
capacitance
(pF)
Spectralresponse
range(nm)
Gainλ=800 nm
Breakdownvoltage
max.(V)
Temp.coefficient ofbreakdown
voltage(V/˚C)
Surface mount type
*2 *2
*2
These near infrared APDs are designed to be operated at low voltages. High gain can be obtained with bias voltages below 200 V, making these APDs suitable for spatial light transmission, laser radar and optical fiber communications.
The S10341 series is a low cost, small size Si APD with a surface-mount plastic package suitable for mass production.
Effectivephotosensitive
area(mm)
*1
*1: Photosensitive area in which a typical gain can be obtained*2: Measured under conditions that the device is operated at the gain listed in the specification table
S12023-02NEW
S12023-05NEW
S12023-10NEW
S12023-10ANEW
S12051NEW
S12086NEW
CutofffrequencyRL=50 Ω
(MHz)
*2
Effectivephotosensitive
area(mm)
*1
4
Spectral response
KAPDB0020EB
Gain vs. reverse voltage
KAPDB0017EC
Wavelength (nm)
Pho
tose
nsiti
vity
(A/W
)(Typ. Ta=25 ˚C, λ=800 nm)
200 400 600 800 1000
40
20
0
50
30
10
M=100
M=50
80 100 120 140 160 1801
10
100
1000
10000
Reverse voltage (V)
Gai
n
(Typ. λ=800 nm)
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
Quantum efficiency vs. wavelength
KAPDB0021EA
Wavelength (nm)
Qua
ntum
eff
icie
ncy
(%)
60
200 400 600 800 1000
40
20
0
80
100(Typ. Ta=25 ˚C)
5
Low temperature coefficient
Spectral response
KAPDB0026EA
Wavelength (nm)
Pho
tose
nsiti
vity
(A/W
)
(Typ. Ta=25 ˚C, λ=800 nm)
200
40
20
0
50
30
10
400 600 800 1000
M=100
M=50
Quantum efficiency vs. wavelength
KAPDB0027EA
Gain vs. reverse voltage
KAPDB0029EBReverse voltage (V)
Gai
n
(Typ. λ=800 nm)
160 200 220 240
102
100
101
260
104
103
180
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
*1: Photosensitive area in which a typical gain can be obtained*2: Measured under conditions that the device is operated at the gain listed in the specification table
Wavelength (nm)
Qua
ntum
eff
icie
ncy
(%)
(Typ. Ta=25 ˚C)
200 400 600 800 1000
40
20
0
80
60
100
S6045 series are Si APDs optimized for near infrared detection. Because their bias voltage exhibits a low temperature coeffi-cient, a stable gain can be obtained over a wide temperature range. Common applications include spatial light transmission, laser radars and optical fiber communications.
Type no. PackageSpectralresponse
range(nm)
Breakdownvoltage
max.ID=100 A
(V)
Temp.coefficient ofbreakdown
voltage(V/˚C)
Terminalcapacitance
(pF)
Gainλ=800 nm
*2 *2
S6045-04
S6045-05
S6045-06
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
400 to 1000
1000
900
600
350
80
35
1
2.5
6
12
50
120
60
40
300 0.4
100
TO-18
TO-5
TO-8
Effectivephotosensitive
area(mm)
*1 CutofffrequencyRL=50 Ω
(MHz)
S12060-02NEW
S12060-05NEW
S12060-10NEW
Near infrared type Si APD
6
*1: Photosensitive area in which a typical gain can be obtained*2: Measured under conditions that the device is operated at the gain listed in the specification table
800 nm band, low terminal capacitance
Spectral response (M=100)
KAPDB0109EB
Gain vs. reverse voltage
KAPDB0185EAKAPDB0082EA
Reverse voltage (v)
(Typ. λ=800 nm)
Gai
n
150 200 2501001
10
100
1000
10000
300
-20 ˚C 20 ˚C0 ˚C
40 ˚C
60 ˚C
The S12092/S9251 series are used for laser radars. Its gain versus reverse voltage curve is less sharp, so stable operation can be maintained.
Type no. Package
CutofffrequencyRL=50 Ω
(MHz)
Spectralresponse
range(nm)
Temp.coefficient ofbreakdown
voltage(V/ ˚C)
Terminalcapacitance
(pF)
Gainλ=900 nm
Breakdownvoltage
max.ID=100 A
(V)
*2
*2
S9251-10
S9251-15
φ0.2
φ0.5
φ1.0
φ1.5
440 to 1100
400
350 1.85 100
TO-18
TO-5
380
350
1.9
0.7
0.4
3.6
Effectivephotosensitive
area(mm)
*1
S12092-02NEW
S12092-05NEW
Type no. Package
CutofffrequencyRL=50 Ω
(MHz)
Spectralresponse
range(nm)
Temp.coefficient ofbreakdown
voltage(V/˚C)
Terminalcapacitance
(pF)
Gainλ=890 nm
Breakdownvoltage
max.ID=100 A
(V)
S11519-10 φ1.0
φ3.0
600 to 1150
400
230
500 1.7 100
TO-8
TO-5
12.0
2.0
The S11519 series is manufactured using MEMS technology to improve sensitivity in the near infrared region for detection of YAG lasers (1.06 m).
1000 nm band/high sensitivity
S11519-30
Effectivephotosensitive
area(mm)
Wavelength (nm)
Pho
tose
nsiti
vity
(A/W
)
(Typ. Ta=25 ˚C, λ=800 nm)
400
50
20
0
80
70
40
60
30
10
600 800 1000 1200
S9251 series
S11519 series
Reverse voltage (V)
Gai
n
100 300
102
100
101
400
104
103
200
-20 ˚C
0 ˚C20 ˚C
60 ˚C
40 ˚C
(Typ.)
S11519 seriesS9251 series
7
* Products listed in the previous catalog but removed from this catalog
Near infrared type Si APD
S9074
S9073 S12053-02
S12053-05
S12053-10
S8550-02
Products removed from this catalog
Conventional product* Replacement
S8550
S12023-02S2381
S12023-05S2382
S12051S5139
S12086S8611
S12023-10S2383
S12023-10AS2383-10
Not availableS9717-02K
Not availableS9717-05K
S5343
S6045-01
S9717-05L Not available
S12060-02
S12060-05
S12060-10S6045-03
S12092-02S9251-02
S12092-05S9251-05
Not availableS8890-02
Not availableS8890-05
S11519-10S8890-10
Not availableS8890-15
S11519-30S8890-30
S6045-02
APD modules
8
APD modules are designed for easy use of Si APD. Each module consists of a Si APD, an amplifier and abias power supply, assembled in a compact configuration. The APD modules operate from a +5 V power supply, and can be used for various applications of light detection in a frequency range up to 100 MHz.
Standard type
C5331
4 kHz
S3884φ1.5
100 MHz
-4.65 × 104
3
+5
Type no.Supplyvoltage
(V)
Effective*photosensitive
area
(mm)
Built-inAPD
Photoelectric sensitivity
built-in APDM=30, λ=800 nm
(V/W)
Minimum detection limit
built-in APDM=30, λ=800 nm
(nW rms)
±2.5
C5331-01 S2381φ0.2 -7.50 × 104
C5331-02 S2382φ0.5 -7.50 × 104
C5331-03 S2383φ1.0 -6.75 × 104
C5331-04 S2384φ3.0 80 MHz -2.30 × 104 3.6
C5331-05 S2385φ5.0 50 MHz -0.83 × 104 4.9
Temperaturestability of gain
25 ± 10 ˚C(%)
Low band High band
Cutoff frequency
C5331-11
4 kHz
S5343φ1.0
40 MHz
100 MHz
20 MHz
-2.46 × 104
8.2
5
7.6
+5
Type no.Supplyvoltage
(V)
Effective*photosensitive
area
(mm)
Built-inAPD
Photoelectric sensitivity
built-in APDM=30, λ=620 nm
(V/W)
Minimum detection limit
built-in APDM=30, λ=620 nm
(nW rms)
±2.5C5331-12 S5344φ3.0 -1.26 × 104
C5331-13 S5345φ5.0 -0.69 × 104
Temperaturestability of gain
25 ± 10 ˚C(%)
Low band High band
Cutoff frequency
Near infrared type
Peak sensitivity wavelength: 800 nm Wide bandwidth Available with optical fiber adapter (sold separately)
APD evaluation Spatial light transmission Optical rangefinders Optical communications Laser radars
Short wavelength type
Peak sensitivity wavelength: 620 nm Wide bandwidth Available with optical fiber adapter (sold separately)
Film scanners Laser monitors
* Photosensitive area in which a typical gain can be obtained
C5331-30
Type no. Feature
C5331-31
C5331 + FC connector
C5331-01 + FC connector with lens
FC connector coupling type
Features Applications
Features Applications
9
The C5460 series are high gain APD modules suited for low-light-level detection including DC light.
An FC connector or SMA connector can be attached to the following products of the C5331/C5460 series APD modulesby using a dedicated adapter.
High-sensitivity type
Low-light-level detection DC light detection High gain
Barcode readers Fluorescence measurement Particle counters
C5460
DC
S3884φ1.5
100 kHz
10 MHz 1.50 × 106
6.3
630
±12
Type no.Supplyvoltage
(V)
Built-inAPD M=30, λ=800 nm
(V/W)M=30, λ=800 nm
(pW rms)
±2.5
C5460-01 S2384φ3.0 -1.50 × 108
Temperaturestability of gain
25 ± 10 ˚C(%)
Low band High band
Cutoff frequency
C5331-01 A8407-18
APD module FC adapter
A8424-18
C5331-02 A8407-18 A8424-18
C5331-03 A8407-18 A8424-18
C5331-04 A8407-05A A8424-05A
C5331-05 A8407-08
C5331-11 A8407-18 A8424-18
C5331-12 A8407-05A A8424-05A
C5331-13 A8407-08
C5460 A8407-05 A8424-05
C5460-01 A8407-05A A8424-05A
C10508 *2 *2
SMA adapter
*2: Please consult your local sales office for more information.
Attachment adapters for FC and SMA connectors (sold separately)
Features Applications
Easily adjustable gain: adjustable by switch or by PC command Gain fluctuation with temperature: ±5 % Max. (M=250, Ta=0 ˚C to 40 ˚C) Easy handling: ±5 V supply voltage
APD evaluation Power meter Low-light-level detection
Features Applications
Effective photosensitive
area
(mm)
*1 Photoelectricsensitivity
Minimumdetection limit
High-stability type
C10508 DCS2383φ1.0 10 MHz 1.25 × 107 63 ±5
Type no.Built-in
APD
±5.0 Max.
Low band High band
Cutoff frequency
*1: Photosensitive area in which a typical gain can be obtained
Along with an APD, current-to-voltage conversion circuit, and high-voltage power supply circuit, the C10508 contains a microcontroller to perform temperature compensation based on information from the internal thermosensor. Because temperature coefficients that match the APD temperature characteristics are written in the microprocessor chip, the APD can be operated with a highly stable gain over a wide temperature range even at high gain levels.
Effective photosensitive
area
(mm)
*1
M=250, λ=800 nm(V/W)
Photoelectricsensitivity
M=250, λ=800 nm(pW rms)
Minimumdetection limit Supply
voltage
(V)
Temperaturestability of gain
0 to 40 ˚C(%)
This APD module is designed for light detection in a wideband frequency range (up to 1 GHz).
High-speed type
High-speed response OTDR Optical communications
C5658 φ0.5 1 GHz50 kHzS2382
S4315-01
2 TE-cooledtype of S4315-04
2.50 × 105 16 +12
Type no. Built-inAPD
Supplyvoltage
(V)
Effective*1
photosensitivearea
(mm)M=100, λ=800 nm
(V/W)M=100, λ=800 nm
(nW rms)
±5.0
Temperaturestability of gain
25 ± 10 ˚C(%)
Low band High band
Cutoff frequency
The C4777 series is high sensitivity APD module for low-light-level detection.
TE-cooled type
Highly stable photometry Wide bandwidth (C4777) DC light detection (C4777-01) High sensitivity (C4777-01)
Low-light-level detection Scientific measurements
C4777 φ0.5 100 MHz10 kHz -2.50 × 105 *2 0.8 nW rms *2
±15+5
Type no.Supplyvoltage
(V)
Effective*1
photosensitivearea
(mm)λ=800 nm
(V/W)λ=800 nm
±3.0
C4777-01 φ3.0 5 kHzDC -1.25 × 109 *3 0.28 pW rms *3
Temperaturestability of gain
25 ± 15 ˚C(%)
Low band High band
Cutoff frequency
*1: Photosensitive area in which a typical gain can be obtained*2: M=100*3: M=50
Built-inAPD
Features Applications
Features Applications
10
Photoelectricsensitivity
Minimumdetection limit
Photoelectricsensitivity
Minimumdetection limit
APD modules
MEMO
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www.hamamatsu.comPlease access our website to check various information about our latest productcatalogues, news, technology introduction and corporate outline.Some of the new/developmental products in this catalogue may not be available onour website. Please consult your local sales office for more information.
N o t i c eCopies of the full warranty can be obtained prior to the purchase of products by contacting your local HAMAMATSU sales office.
HAMAMATSU makes no other warranties, and any and all implied warranties of merchantability, or fitness for a particular purpose, are hereby disclaimed. The customer is responsible for use of the product in accordance with HAMAMATSU's instructions and within the operating specifications and ratings listed in this catalogue. HAMAMATSU shall not be responsible for the customer's improper selection of a product for a particular application or otherwise. No warranty will apply if the products are in any way altered or modified after delivery by HAMAMATSU or for any intentional misuse or abuse of the products. Proper design safety rules should be followed when incorporating these products into devices that could potentially cause bodily injury.
HAMAMATSU 's liability on any claim for loss or damage arising out of the supplying of any products, whether based on contract, warranty, tort (including negligence and for property damage or death and bodily injury) or other grounds, shall not in any event exceed the price allocable to such products or a part thereof involved in the claim, regardless of cause or fault. In no event shall HAMAMATSU be responsible to the customer or any third party for any consequential, incidental or indirect damages, including but not limited to loss of profits, revenues, sales, data, business, goodwill or use, even if the company has been advised of the possibility of such loss or damage. The limitation of liability set forth herein applies both to products and services purchased or otherwise provided hereunder. This warranty is limited to repair or replacement, at the sole option of HAMAMATSU, of any product which is defective in workmanship or materials used in manufacture. All warranty claims must be made within 1 year from the date of purchase or provision of the products or services.
Products that are amenable to repair shall be done so either under warranty or pursuant to a separate repair agreement. Some products cannot be repaired either because of the nature or age of the product, the unavailability of spare parts, or the extent of the damage is too great. Please contact your local HAMAMATSU office for more details.
The products described in this catalogue should be used by persons who are accustomed to the properties of photoelectronics devices, and have expertise in handling and operating them. They should not be used by persons who are not experienced or trained in the necessary precautions surrounding their use.
The information in this catalogue is subject to change without prior notice
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
No patent rights are granted to any of the circuits described herein.
We welcome you to visit our website.
Cat. No. KAPD0001E04Dec. 2011 DNPrinted in Japan (2,500)
HAMAMATSU PHOTONICS K.K., Solid State Division1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, JapanTelephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
Information in this catalogue isbelieved to be reliable. However,no responsibility is assumed forpossible inaccuracies or omissions.Specifications are subject tochange without notice. No patentrights are granted to any of thecircuits described herein.
© 2011 Hamamatsu Photonics K.K.
Quality, technology, and serviceare part of every product.
Main ProductsSi photodiodesAPDMPPCPhoto ICImage sensorsX-ray flat panel sensorsPSDInfrared detectorsLEDOptical communication devicesAutomotive devicesMini-spectrometers High energy particle/X-ray detectorsOpto-semiconductor modules
Hamamatsu also supplies:Photoelectric tubesImaging tubesLight sourcesImaging and processing systems
JAPAN:HAMAMATSU PHOTONICS K.K.325-6, Sunayama-cho, Naka-kuHamamatsu City, 430-8587, JapanTelephone: (81)53-452-2141, Fax: (81)53-456-7889
U.S.A.:HAMAMATSU CORPORATIONMain Office360 Foothill Road, P.O. BOX 6910,Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218E-mail: [email protected]
Western U.S.A. Office:Suite 200, 2875 Moorpark Avenue San Jose, CA 95128, U.S.A.Telephone: (1)408-261-2022, Fax: (1)408-261-2522E-mail: [email protected]
United Kingdom, South Africa:HAMAMATSU PHOTONICS UK LIMITEDMain Office2 Howard Court, 10 Tewin Road, Welwyn Garden City,Hertfordshire AL7 1BW, United KingdomTelephone: (44)1707-294888, Fax: (44)1707-325777E-mail: [email protected]
South Africa office:PO Box 1112Buccleuch 2066Johannesburg, South AfricaTelephone/Fax: (27)11-802-5505
France, Portugal, Belgium, Switzerland, Spain:HAMAMATSU PHOTONICS FRANCE S.A.R.L.19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, FranceTelephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10E-mail: [email protected]
Swiss Office:Dornacherplatz 74500 Solothurn, SwitzerlandTelephone: (41)32/625 60 60, Fax: (41)32/625 60 61E-mail: [email protected]
Belgian Office:Scientific Park,7, Rue du BosquetB-1348 Louvain-La-Neuve, BelgiumTelephone: (32)10 45 63 34Fax: (32)10 45 63 67E-mail: [email protected]
Spanish Office:C. Argenters, 4 edif 2Parque Tecnologico del Valles E-08290 CERDANYOLA, (Barcelona) SpainTelephone: (34)93 582 44 30Fax: (34)93 582 44 31E-mail: [email protected]
Germany, Denmark, Netherlands, Poland:HAMAMATSU PHOTONICS DEUTSCHLAND GmbHArzbergerstr. 10,D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0, Fax: (49)8152-265-8E-mail: [email protected]
Danish Office:Lautruphoj 1-3DK-2750 Ballerup, DenmarkTelephone: (45)70 20 93 69, Fax: (45)44 20 99 10E-mail: [email protected]
Netherlands Office:Televisieweg 2NL-1322 AC Almere, The NetherlandsTelephone: (31)36-5405384, Fax: (31)36-5244948E-mail: [email protected]
Poland Office:02-525 Warsaw,8 St. A. Boboli Str., PolandTelephone: (48)22-646-0016, Fax: (48)22-646-0018E-mail: [email protected]
North Europe and CIS:HAMAMATSU PHOTONICS NORDEN ABSmidesvägen 12SE-171 41 Solna, SwedenTelephone: (46)8-509-031-00, Fax: (46)8-509-031-01E-mail: [email protected]
Russian Office:Vyatskaya St. 27, bld. 15Kosmodamianskaya nab. 52/1, 14th floorRU-127015 Moscow, RussiaTelephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19E-mail: [email protected]
Italy:HAMAMATSU PHOTONICS ITALIA S.R.L.Strada della Moia, 1 int. 620020 Arese, (Milano), ItalyTelephone: (39)02-935 81 733Fax: (39)02-935 81 741E-mail: [email protected]
Rome Office:Viale Cesare Pavese, 43500144 Roma, ItalyTelephone: (39)06-50513454, Fax: (39)06-50513460E-mail: [email protected]
China:HAMAMATSU PHOTONICS (CHINA) CO., LTD.1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu,Chaoyang District, Beijing 100020, ChinaTelephone: (86)10-6586-6006, Fax: (86)10-6586-2866E-mail: [email protected]
Hong Kong:HAKUTO ENTERPRISES LTD.Units 709-712, 7/F, Miramar Tower,132 Nathan Road, Tsimshatsui, Kowloon, Hong KongTelephone: (852)2578-4921, Fax: (852)2807-2498
Taiwan:HAKUTO TAIWAN LTD.6F, No.308, Pa teh Road, Sec, 2,Taipei, Taiwan R.O.C.Telephone: (886)2-8772-8910Fax: (886)2-8772-8918
KORYO ELECTRONICS CO., LTD.9F-7, No.79, Hsin Tai Wu Road Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C.Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147
Republic of Korea:SANGKI CORPORATIONSuite 431, World Vision BLDG.24-2 Yoido-DongYoungdeungpo-KuSeoul, 150-877Telephone: (82)2-780-8515Fax: (82)2-784-6062
Singapore:HAKUTO SINGAPORE PTE LTD.Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04Kaki Bukit Industrial Estate, Singapore 417938Telephone: (65)67458910, Fax: (65)67418200
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