Silicon strip tests

Silicon upgrade workshop in NashvilleJune 9, 2003

Yuji Goto (RIKEN/RBRC)

June 9, 2003 Yuji Goto (RIKEN/RBRC) 2

Silicon strip sensor• prototype v1

– by Zheng Li (BNL instrumentation div.)

– 2-dimensional single-sided sensor

x

u

x

u

GR’s

20 m Lines for Y-strip

Bonding pads for Y-strips205mx120 m

16 m lines for X-strip

GR’s Bonding pads for X-strips125 mx105 m

16 m Lines for X

1000 m

80 m

X-pixel(1st metal)

Y-pixel(1st metal)

2nd MetalY-strip

2nd MetalX-strip

FWHMfor chargediffusion

BondingPad forY-strip

Go toBondingPad forX-strip

Z. Li, Inst. Div., BNL

June 9, 2003 Yuji Goto (RIKEN/RBRC) 3

Silicon strip sensor• prototype v1

– 2 metal (Al) layers– thickness: 400m and 250m– DC coupling– full depletion at ~80 V– capacitance ~10 pF– leakage current ~10 nA

1nA

0.1 1 10 100 500

Bias voltage (V)

10 |-5

10 |-4

10 |-3

10 |-2

10 |-1

10 |0

Cur

rent

(uA

)

0.1 1 10 100 500

Bias voltage (V)

10 |-5

10 |-4

10 |-3

10 |-2

10 |-1

10 |0

Cur

rent

(uA

)

Strip Detector 1234-BY1, 400 um, 0.024 cm2/strip, 10 cm long

0.1 1 10 100 500

Bias voltage (V)

10 |1

10 |2

Cap

acita

nce

(pF)

Strip Detector 1234-BY1, 400 um, 0.024 cm2/strip, 10 cm long

June 9, 2003 Yuji Goto (RIKEN/RBRC) 4

Silicon strip sensor• R&D items

– charge division– noise level– position resolution– efficiency

• test readout with VA2

June 9, 2003 Yuji Goto (RIKEN/RBRC) 5

-source test• setup

– 90Sr: end point 2.28MeV

• purpose– calibration– dead/hot channel map

June 9, 2003 Yuji Goto (RIKEN/RBRC) 6

-source test• clustering

– S/N

• charge division

– AQ ~ 0.18

x大u大

mean=-0.0094±0.0007σ=0.1805±0.0005

x > uu > x

ux

uxQ QQ

QQA

400m thickness+50V bias

x: S/N400m: 13.230.17250m: 7.970.08

u: S/N400m: 16.910.18250m: 7.510.10

June 9, 2003 Yuji Goto (RIKEN/RBRC) 7

KEK beam test• KEK-PS T1 beam line

– 0.5-2.0 GeV/c charged particles– tracking with clusters on 2nd-6th board

June 9, 2003 Yuji Goto (RIKEN/RBRC) 8

KEK beam test• position resolution

– 23m-26m– expected: 80m/12=23m

• efficiency

Si#4 uσ~37.53±0.90

Si#4 xσ~43.76±0.13

Si number efficiency

2(250um) 61.45±1.91

3(400um) 96.41±2.87

4(400um) 98.23±2.88

5(400um) 87.29±2.66

6(250um) 58.33±1.82

Si number Residual x(μm)

Residual x(μm)

2(250um) 52.66±0.21 50.99±0.20

3(400um) 35.73±0.08 43.08±0.13

4(400um) 43.76±0.13 37.53±0.90

5(400um) 34.45±0.08 43.49±0.13

6(250um) 48.66±0.17 45.63±0.15

boards ,6,5,32on clusters track with#boards 6-2on clusters track with#

efficiency board4

ththrdnd

thnd

th

June 9, 2003 Yuji Goto (RIKEN/RBRC) 9

KEK beam test• charge division

– diffusion of hole-electron pair might be smaller than p+ electrode size, and the hole is collected by local x or u line (7m line + 6m gap) …

0° 15° 30°

x大u大 x大u大 x大u大

June 9, 2003 Yuji Goto (RIKEN/RBRC) 10

Schedule• prototype v2

– v1: 7m line + 6m gap, 3 turns– v2: 5m line + 3m gap, 5 turns

• laser test bench will be made to investigate local effect• test with SVX4 + ORNL ROC/FEM prototype

– in September ?