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Simulation of an erbium-doped chalcogenide micro-disk mid-infrared laser source Faleh Al Tal, 1,* Clara Dimas, 1 Juejun Hu, 2,3 Anu Agarwal, 2 and Lionel C. Kimerling 2 1 Material Science and Engineering, Masdar Institute of Science and Technology, Masdar City, Abu Dhabi, P.O. Box 54224, UAE 2 Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USA 3 Department of Materials Science & Engineering, University of Delaware, Newark, DE 19716, USA *[email protected] Abstract: The feasibility of mid-infrared (MIR) lasing in erbium-doped gallium lanthanum sulfide (GLS) micro-disks was examined. Lasing condition at 4.5 μm signal using 800 nm pump source was simulated using rate equations, mode propagation and transfer matrix formulation. Cavity quality (Q) factors of 1.48 × 10 4 and 1.53 × 10 6 were assumed at the pump and signal wavelengths, respectively, based on state-of-the-art chalcogenide micro-disk resonator parameters. With an 80 μm disk diameter and an active erbium concentration of 2.8 × 10 20 cm 3 , lasing was shown to be possible with a maximum slope efficiency of 1.26 × 10 4 and associated pump threshold of 0.5 mW. ©2011 Optical Society of America OCIS codes: (140.3070) Infrared and far-infrared lasers; (140.3500) Lasers, erbium; (140.3580) Lasers, solid-state; (140.3945) Microcavities; (140.5680) Rare earth and transition metal solid- state lasers. References and links 1. B. J. Eggleton, ―Chalcogenide photonics: fabrication, devices and applications. Introduction,‖ Opt. Express 18(25), 2663226634 (2010). 2. A. Seddon, ―Chalcogenide glasses: a review of their preparation, properties and applications,‖ J. Non-Cryst. Solids 184, 4450 (1995). 3. A. Zakery, ―Optical properties and applications of chalcogenide glasses: a review,‖ J. Non-Cryst. Solids 330(1- 3), 112 (2003). 4. N. Carlie, J. D. Musgraves, B. Zdyrko, I. Luzinov, J. Hu, V. Singh, A. Agarwal, L. C. Kimerling, A. Canciamilla, F. Morichetti, A. Melloni, and K. Richardson, ―Integrated chalcogenide waveguide resonators for mid-IR sensing: leveraging material properties to meet fabrication challenges,‖ Opt. Express 18(25), 2672826743 (2010). 5. C. Tsay, Y. Zha, and C. B. Arnold, ―Solution-processed chalcogenide glass for integrated single-mode mid- infrared waveguides,‖ Opt. Express 18(25), 2674426753 (2010). 6. K. Richardson, L. Petit, N. Carlie, B. Zdyrko, I. Luzinov, J. Hu, A. Agarwal, L. Kimerling, T. Anderson, and M. Richardson, ―Progress on the fabrication of on-chip, integrated chalcogenide glass (ChG)-based sensors,‖ J. Nonlinear Opt. Phys. Mater. 19(01), 7599 (2010). 7. M. Ebrahim-Zadeh and I. Sorokina, Mid-Infrared Coherent Sources and Applications (Springer, 2007). 8. A. Kenyon, ―Recent Developments in rare-earth doped materials for optoelectronics,‖ Prog. Quantum Electron. 26(4-5), 225284 (2002). 9. A. B. Seddon, Z. Tang, D. Furniss, S. Sujecki, and T. M. Benson, ―Progress in rare-earth-doped mid-infrared fiber lasers,‖ Opt. Express 18(25), 2670426719 (2010). 10. J. S. Sanghera, L. Brandon Shaw, and I. D. Aggarwal, ―Chalcogenide glass-fiber-based mid-IR sources and applications,‖ IEEE J. Sel. Top. Quantum Electron. 15(1), 114119 (2009). 11. J. Sanghera, ―Active and passive chalcogenide glass optical fibers for IR applications: a review,‖ J. Non-Cryst. Solids 256257, 616 (1999). 12. V. Nazabal, P. Němec, A. M. Jurdyc, S. Zhang, F. Charpentier, H. Lhermite, J. Charrier, J. P. Guin, A. Moreac, and M. Frumar, ―Optical waveguide based on amorphous Er 3+ -doped GaGeSbS(Se) pulsed laser deposited thin films,‖ Thin Solid Films 518(17), 49414947 (2010). 13. J. Fick, ―High photoluminescence in erbium-doped chalcogenide thin films,‖ J. Non-Cryst. Solids 272(2-3), 200208 (2000). #144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011 (C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11951
Transcript
Page 1: Simulation of an erbium-doped chalcogenide micro-disk mid ...web.mit.edu/hujuejun/www/My Papers/Journal Papers... · Simulation of an erbium-doped chalcogenide micro-disk mid-infrared

Simulation of an erbium-doped chalcogenide

micro-disk mid-infrared laser source

Faleh Al Tal,1,*

Clara Dimas,1 Juejun Hu,

2,3 Anu Agarwal,

2 and Lionel C. Kimerling

2

1Material Science and Engineering, Masdar Institute of Science and Technology, Masdar City, Abu Dhabi, P.O. Box

54224, UAE 2Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

3Department of Materials Science & Engineering, University of Delaware, Newark, DE 19716, USA

*[email protected]

Abstract: The feasibility of mid-infrared (MIR) lasing in erbium-doped

gallium lanthanum sulfide (GLS) micro-disks was examined. Lasing

condition at 4.5 µm signal using 800 nm pump source was simulated using

rate equations, mode propagation and transfer matrix formulation. Cavity

quality (Q) factors of 1.48 × 104 and 1.53 × 10

6 were assumed at the pump

and signal wavelengths, respectively, based on state-of-the-art chalcogenide

micro-disk resonator parameters. With an 80 µm disk diameter and an

active erbium concentration of 2.8 × 1020

cm3

, lasing was shown to be

possible with a maximum slope efficiency of 1.26 × 104

and associated

pump threshold of 0.5 mW.

©2011 Optical Society of America

OCIS codes: (140.3070) Infrared and far-infrared lasers; (140.3500) Lasers, erbium; (140.3580)

Lasers, solid-state; (140.3945) Microcavities; (140.5680) Rare earth and transition metal solid-state lasers.

References and links

1. B. J. Eggleton, ―Chalcogenide photonics: fabrication, devices and applications. Introduction,‖ Opt. Express

18(25), 26632–26634 (2010).

2. A. Seddon, ―Chalcogenide glasses: a review of their preparation, properties and applications,‖ J. Non-Cryst.

Solids 184, 44–50 (1995).

3. A. Zakery, ―Optical properties and applications of chalcogenide glasses: a review,‖ J. Non-Cryst. Solids 330(1-

3), 1–12 (2003). 4. N. Carlie, J. D. Musgraves, B. Zdyrko, I. Luzinov, J. Hu, V. Singh, A. Agarwal, L. C. Kimerling, A. Canciamilla,

F. Morichetti, A. Melloni, and K. Richardson, ―Integrated chalcogenide waveguide resonators for mid-IR

sensing: leveraging material properties to meet fabrication challenges,‖ Opt. Express 18(25), 26728–26743 (2010).

5. C. Tsay, Y. Zha, and C. B. Arnold, ―Solution-processed chalcogenide glass for integrated single-mode mid-

infrared waveguides,‖ Opt. Express 18(25), 26744–26753 (2010). 6. K. Richardson, L. Petit, N. Carlie, B. Zdyrko, I. Luzinov, J. Hu, A. Agarwal, L. Kimerling, T. Anderson, and M.

Richardson, ―Progress on the fabrication of on-chip, integrated chalcogenide glass (ChG)-based sensors,‖ J.

Nonlinear Opt. Phys. Mater. 19(01), 75–99 (2010). 7. M. Ebrahim-Zadeh and I. Sorokina, Mid-Infrared Coherent Sources and Applications (Springer, 2007).

8. A. Kenyon, ―Recent Developments in rare-earth doped materials for optoelectronics,‖ Prog. Quantum Electron.

26(4-5), 225–284 (2002). 9. A. B. Seddon, Z. Tang, D. Furniss, S. Sujecki, and T. M. Benson, ―Progress in rare-earth-doped mid-infrared

fiber lasers,‖ Opt. Express 18(25), 26704–26719 (2010).

10. J. S. Sanghera, L. Brandon Shaw, and I. D. Aggarwal, ―Chalcogenide glass-fiber-based mid-IR sources and

applications,‖ IEEE J. Sel. Top. Quantum Electron. 15(1), 114–119 (2009).

11. J. Sanghera, ―Active and passive chalcogenide glass optical fibers for IR applications: a review,‖ J. Non-Cryst.

Solids 256–257, 6–16 (1999). 12. V. Nazabal, P. Němec, A. M. Jurdyc, S. Zhang, F. Charpentier, H. Lhermite, J. Charrier, J. P. Guin, A. Moreac,

and M. Frumar, ―Optical waveguide based on amorphous Er3+-doped Ga–Ge–Sb–S(Se) pulsed laser deposited

thin films,‖ Thin Solid Films 518(17), 4941–4947 (2010). 13. J. Fick, ―High photoluminescence in erbium-doped chalcogenide thin films,‖ J. Non-Cryst. Solids 272(2-3), 200–

208 (2000).

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11951

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14. V. Nazabal, A. M. Jurdyc, P. Němec, M. L. Brandily-Anne, L. Petit, K. Richardson, P. Vinatier, C. Bousquet, T.

Cardinal, and S. Pechev, ―Amorphous Tm3+ doped sulfide thin films fabricated by sputtering,‖ Opt. Mater. 33(2), 220–226 (2010).

15. J. Frantz, J. Sanghera, L. Shaw, G. Villalobos, I. Aggarwal, and D. Hewak, ―Sputtered films of Er3+-doped

gallium lanthanum sulfide glass,‖ Mater. Lett. 60(11), 1350–1353 (2006). 16. T. Schweizer, D. W. Hewak, D. N. Payne, T. Jensen, and G. Huber, ―Rare-earth doped chalcogenide glass laser,‖

Electron. Lett. 32(7), 666–667 (1996).

17. T. Schweizer, B. N. Samson, R. C. Moore, D. W. Hewak, and D. N. Payne, ―Rare-earth doped chalcogenide glass fibre laser,‖ Electron. Lett. 33(5), 414–416 (1997).

18. A. K. Mairaj, C. Riziotis, A. M. Chardon, P. G. R. Smith, D. P. Shepherd, and D. W. Hewak, ―Development of

channel waveguide lasers in Nd3+-doped chalcogenide (Ga:La:S) glass through photoinduced material modification,‖ Appl. Phys. Lett. 81(20), 3708–3710 (2002).

19. A. K. Mairaj, A. M. Chardon, D. P. Shepherd, and D. W. Hewak, ―Laser performance and spectroscopic analysis

of optically written channel waveguides in neodymium-doped gallium lanthanum sulphide glass,‖ IEEE J. Sel. Top. Quantum Electron. 8(6), 1381–1388 (2002).

20. K. Sasagawa, K. Kusawake, J. Ohta, and M. Nunoshita, ―Nd-doped tellurite glass microsphere laser,‖ Electron.

Lett. 38(22), 1355–1357 (2002). 21. K. Sasagawa, Z.-o. Yonezawa, R. Iwai, J. Ohta, and M. Nunoshita, ―S-band Tm3+-doped tellurite glass

microsphere laser via a cascade process,‖ Appl. Phys. Lett. 85(19), 4325–4327 (2004).

22. J. Wu, S. Jiang, T. Qua, M. Kuwata-Gonokami, and N. Peyghambarian, ―2 μm lasing from highly thulium doped tellurite glass microsphere,‖ Appl. Phys. Lett. 87(21), 211118 (2005).

23. G. R. Elliott, G. S. Murugan, J. S. Wilkinson, M. N. Zervas, and D. W. Hewak, ―Chalcogenide glass microsphere

laser,‖ Opt. Express 18(25), 26720–26727 (2010). 24. F. Prudenzano, L. Mescia, L. A. Allegretti, M. De Sario, T. Palmisano, F. Smektala, V. Moizan, V. Nazabal, and

J. Troles, ―Design of Er3+-doped chalcogenide glass laser for MID-IR application,‖ J. Non-Cryst. Solids 355(18-

21), 1145–1148 (2009). 25. T. Schweizer, D. Brady, and D. W. Hewak, ―Fabrication and spectroscopy of erbium doped gallium lanthanum

sulphide glass fibres for mid-infrared laser applications,‖ Opt. Express 1(4), 102–107 (1997). 26. J. Hu, N. N. Feng, N. Carlie, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, ―Optical loss reduction in

high-index-contrast chalcogenide glass waveguides via thermal reflow,‖ Opt. Express 18(2), 1469–1478 (2010).

27. H. Yayama, ―Refractive index dispersion of gallium lanthanum sulfide and oxysulfide glasses,‖ J. Non-Cryst. Solids 239(1-3), 187–191 (1998).

28. H. Haus, Waves and Fields in Optoelectronics (Prentice-Hall, 1984).

29. S. Hooker, Laser Physics (Oxford University Press, 2010). 30. K. Kadono, ―Rate equation analysis and energy transfer of Er3+-doped Ga2S3–GeS2–La2S3 glasses,‖ J. Non-Cryst.

Solids 331(1-3), 79–90 (2003).

31. M. Desario, L. Mescia, F. Prudenzano, F. Smektala, F. Deseveday, V. Nazabal, J. Troles, and L. Brilland,

―Feasibility of Er3+-doped, Ga5Ge20Sb10S65 chalcogenide microstructured optical fiber amplifiers,‖ Opt. Laser

Technol. 41(1), 99–106 (2009).

32. R. Quimby, ―Multiphonon energy gap law in rare-earth doped chalcogenide glass,‖ J. Non-Cryst. Solids 320(1-3), 100–112 (2003).

33. B. M. Walsh, ―Judd-Ofelt theory: principles and practices,‖ in Advances in Spectroscopy for Lasers and Sensing,

B. Bartolo and O. Forte, eds. (Kluwer Academic Publishers, 2006), pp. 403–433. 34. D. McCumber, ―Theory of phonon-terminated optical masers,‖ Phys. Rev. 134(2A), A299–A306 (1964).

35. J. G. Solé, L. E. Bausá, and D. Jaque, An Introduction to the Optical Spectroscopy of Inorganic Solids (John

Wiley and Sons, Ltd., 2005). 36. FIMMMWAVE: Waveguides solver (Photon Design, 34 Leopold Street, Oxford, OX41TW, U.K.).

37. R. E. Slusher, A. F. J. Levi, U. Mohideen, S. L. McCall, S. J. Pearton, and R. A. Logan, ―Threshold

characteristics of semiconductor microdisk lasers,‖ Appl. Phys. Lett. 63(10), 1310–1312 (1993). 38. M. Borselli, T. J. Johnson, and O. Painter, ―Beyond the Rayleigh scattering limit in high-Q silicon microdisks:

theory and experiment,‖ Opt. Express 13(5), 1515–1530 (2005).

39. Data Sheet, ―Gallium lanthanum sulphide optical material—internal transmission,‖ ChG Southampton Ltd., University of Southampton, Highfield, Southampton, SO17 1BJ, U.K. (2010).

40. T. Schweizer, ―Rare-earth-doped gallium lanthanum sulphide glasses for mid-infrared fibre lasers,‖ University of

Southampton, Faculty of Engineering and Applied Science, Department of Electronics and Computer Science, Doctoral Thesis (2000).

41. C. Ye, ―Spectral properties of Er3+-doped gallium lanthanum sulphide glass,‖ J. Non-Cryst. Solids 208(1-2), 56–

63 (1996).

1. Introduction

Chalcogenide glasses (ChGs) are distinguished for having chemical durability,

photosensitivity, high refractive index, low phonon energy, low melting temperature, and

broad infrared transparency [1–3]. Such characteristics make this family of glass attractive for

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11952

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the development of infrared integrated optical devices [4–6]. Integration of multiple

monolithic components on a single substrate is beneficial for minimization of size and cost by

enabling systems-on-chip applications. A key enabler for such systems is the demonstration of

monolithic light sources emitting in various wavelength regimes.

Rare earth (RE) elements are incorporated as active emission centers in passive crystalline

and amorphous materials. Many RE transitions are generally quenched in hosts such as

phosphate and silica glasses which have high phonon energies that can bridge low energy

gaps and cause large multi-phonon relaxation rates [7,8]. On the other hand, ChGs have

relatively low phonon energies which reduce the possibility of these non-radiative relaxations

and enable emission of long wavelengths.

RE elements have been incorporated into bulk ChGs and thin films to emit near-infrared,

mid-infrared and far-infrared light [9–15]. Moreover, lasing in RE-doped ChGs fibers,

waveguides, and micro-spheres has been reported. In particular, Nd-doped gallium lanthanum

sulfide (GLS) fibers and laser written waveguides in bulk glass at 1080 nm [16–19]; Nd and

Tm-doped tellurite micro-spheres at 1060 nm and 2 µm, respectively [20–22]; and most

recently Nd-doped GLS micro-sphere at 1080 nm [23]. Also, a theoretical study showed the

feasibility of lasing at 4.5 µm in erbium-doped photonic crystal fibers [24]. However, to date,

no monolithic ChG laser has been demonstrated or investigated.

In this paper, we present our simulation results toward developing a monolithic MIR laser

source, utilizing erbium-doped GLS glass. Bulk erbium-doped GLS showed MIR

photoluminescence emission at 4.5 µm through the transition between 4I9/2 and

4I11/2 energy

levels [25]. Compared to other ChG glasses, GLS is capable of hosting relatively high erbium

concentrations (2.8 × 1020

ions/cm3) without being affected by luminescence quenching [25].

Nevertheless, the considered transition is characterized by a small emission cross section of

2.5 × 1021

cm2. This limits the maximum possible gain to less than 4 dB/cm. For lasing to be

possible under this gain limitation, resonators with minimum quality (Q) factors of 3.5 × 104

are required.

Recently, lift-off and thermal reflow process has been used to demonstrate ChG micro-

disks with Q factors in excess of 105 at 1.55 μm [26]. This is a catalyst for fabricating

monolithic laser sources given the aforementioned specification requirements. In the

subsequent text, lasing at 4.5 µm is examined with 800 nm pumping for erbium-doped GLS

micro-disk. The rate equations of erbium, the pump, and signal disk modes were solved, and a

transfer matrix formulation was used to estimate the output lasing power.

2. Simulation model

The developed model considers pump and signal modes that correspond to wavelengths of

800 nm and 4.5 µm, respectively. Separate bus waveguides introduce and collect the pump

and signal light from the disk as illustrated in Fig. 1. Also, the following constants and

assumptions were used: 1) uniform erbium doping concentration of 2.8 × 1020

cm3

; 2) disk

structure of 80 µm diameter and 600 nm thickness; 3) refractive indices of 2.42 and 2.35 at

the pump and signal wavelengths, respectively, were obtained by fitting experimental data to a

Cauchy relation [27]; 4) transverse electric (TE) polarization modes, with dominant electric

component parallel to the disk plane, were included; 5) Purcell cavity enhancement is

neglected since the photon density in the cavity is high and the micro-disk structure has high

order modes with large radiation; and 6) unidirectional mode propagation was considered.

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11953

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P1, S1

P2, S2

P4, S4

P3, S3

Pin

Sin = 0 Sout

𝛋𝐏𝟐

𝛋𝐬𝟐

Fig. 1. Laser configuration consists of a micro-disk with input pump waveguide and output

signal waveguide. P is the pump power and S is the signal power at the positions indicated by the subscripts, κ2 is the power coupling coefficient between the bus waveguides and the disk,

and the subscripts P and S stand for the pump and signal, respectively.

We establish some useful considerations, to ease the development of our model. Since the

disk has a relatively large diameter, the free spectral range will be less than the emission and

absorption line-widths of erbium. Hence, resonance can be assumed for the pump and signal

modes. Also, for the continuous wave (CW) case, steady state condition is imposed. With

these assumptions and no input signal, the internal power in the disk can be related to the

power in the pump and signal buses through the following relations [28]:

2

1

22 2

.

1 (1 )

P

inP P

P

Pa

(1)

2

2.out SS S (2)

where 2

Pa is the round trip power absorption for the pump mode, Pi is the pump power and Si

is the signal power at the positions indicated by the subscripts, 2

,P S is the power coupling

coefficient between the bus waveguides and the disk and the subscripts P and S stands for the

pump and signal, respectively. We can also eliminate the inter-effect of the signal and pump

bus waveguides on the disk pump and signal modes, respectively, by recognizing the

following. The signal mode has much longer wavelength than the pump mode. Therefore, it

possesses a greater evanescent tail length. Hence, the signal bus can be placed far from the

pump mode tail which prevents pump out-coupling. In addition, since the pump light has a

short wavelength, the pump bus can be designed with a width smaller than the signal cutoff.

Hence, the pump bus will also have no coupling with the signal mode. Then, P3 and S1 will be

equal to P2 and S4, respectively. P4 and S2 are related to P1 and S3 by Beer–Lambert law and

the signal coupling coefficient according to the following relations [28,29]:

4

1

4 1 . .

l

M

P

l

P PExp l dl

(3)

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11954

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2

1

4

3

2 1

1 4 3

( ). ,

( ). .

l

M M

S S

l

l

M M

S S

l

S S Exp l g l dl

S S S Exp l g l dl

(4)

2

3 2 (1 ).SS S (5)

where l is the azimuthal coordinate along the disk circumference, / ( )M

P S l and ( )M

Sg l are the

absorption and gain coefficients of the pump (P) and signal (S) modes at l. From Eq. (4) and

Eq. (5):

4 2

3 1

2( ). ( ). ln(1 ).

l l

M M M M

S S S S S

l l

l g l dl l g l dl (6)

this equation defines the condition that should be satisfied for the steady state (CW) lasing

case. The out coupled signal power should be exactly recovered by the round trip gain. For

smaller gain, lasing is not possible, while higher gain values do not satisfy the steady state

condition.

The energy evolution of erbium is described using the five-level model as elaborated in

Fig. 2 [30,31]. The ion-ion and ion-photon interactions with the pump and signal light are

calculated according to the subsequent rate equations:

2 21

22 2 14 1 4 33 3 16 1 5 24 2 4

5

1 1 2 2

2

2 22

22 2 14 1 4 16 1 5 44 4

3

24 2 4 2 21 2 3 3 2 2

5

523

33 3 3 4 3

4

( ) ,

2 2

,

2

e a P

P P i i

iP

i i

i

a eS S

S S i i

iS S

dNC N C N N C N C N N C N N

dt

IN a N W N

dNC N C N N C N N C N

dt

C N N a N a N W N W N

dN I IC N N N a N a

dt

2

3 3 4 4 3 3

1

2 24

22 2 14 1 4 16 1 5 44 4 24 2 4 3 4

3

1 4 54 5 4 4 5 5 4 4

1

42 25

33 3 16 1 5 44 4 24 2 4 5 5 5 5

1

5

1

,

- - 2 - ( - )

( - ) - ,

,

.

i

i

a e S

S S

S

a e P

P P i

iP

i

i

i Total

i

N W N W N

IdNC N C N N C N N C N C N N N N

dt

IN N a N a N W N W N

dNC N C N N C N C N N a N W N

dt

N N

(7)

where Ni is the ion concentration at energy level i, IS/P is the signal or pump beam intensity,

ħωS/P is the photon energy, Cij are the energy transfer coupling coefficients that quantify the

ion-ion interactions, /

/

e a

S P is the emission (e) or absorption (a) cross section, aij is the

spontaneous emission rate from level i to level j, Wi is the multi-phonon decay rate from level

i to the next lower energy level, and NTotal is the total erbium doping concentration. The values

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11955

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of the energy transfer constants are obtained experimentally [30]. The energy gap law is used

to evaluate the multi-phonon decay rates [32]. The spontaneous emission rate is obtained

using Judd-Ofelt theorem [33]. Finally, McCumber and Füchtbauer-Ladenburg relations are

used to calculate the emission and absorption cross sections at the pump and signal

wavelengths [34,35]. The values of these parameters are provided in the appendix (Table 2).

4I15/2

4I13/2

4I11/2

4I9/2

4F9/2, 4S3/2,

4H11/2, 4F7/2

4F9/2

5

4

3

2

1

6,451

cm-1

10,204

12,400

15,150

Signal

Pu

mp

C22 C14

C33

C16

C44

C24

Fig. 2. Erbium energy levels and ion-ion interaction parameters (Cij). 800 nm pump source excites the ions from the ground state to 4I9/2. The excited ions decay to 4I11/2 to emit 4.5 µm

signal light.

Rosenbrock iterative method was used to find the steady state population distribution of

the ions. The signal gain coefficient (gS), and the pump absorption coefficient due to erbium

(αP,Er), are functions of the pump and signal intensities. These coefficients are given, per unit

area, by the following equations [29]:

4 3

e a

S S Sg N N (8)

, 1 4

a e

P Er P PN N (9)

The cavity modes were calculated for the disk cross section in Fig. 3. A CaF2 substrate

was assumed for its low absorption in the MIR regime. As moisture can be trapped in CaF2, a

GLS thin film to coat the entire substrate was taken into account. To reduce the signal

radiation losses, a large diameter of 80 microns was assumed. Reducing the thickness of the

disk minimizes scattering from the side walls while it increases the signal radiation losses.

Signal radiation was found to be insignificant for a disk thickness of 0.6 µm and a substrate

coating layer of 0.1 µm thickness. A full-vectorial finite difference mode solver on

FIMMWAVE was used to calculate the disk mode profiles at the signal and pump

wavelengths [36]. Having azimuthal symmetry, the two-dimensional solution was calculated

for the disk cross section along the radial and planar directions.

Disk

Coating layer

Substrate

0.6 µm

0.1 µm

80µm

Fig. 3. The micro-disk material cross section showing a CaF2 substrate, and erbium-doped GLS

coating layer and disk. A CaF2 substrate was considered for its low absorption in the MIR regime. As moisture can be trapped in CaF2, a GLS coating layer was sandwiched between the

disk and the substrate (dimensions not drawn to scale for clarity).

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11956

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For optical cavities, the Q factor (Q) is used to quantify the power loss relative to the

stored internal energy. An equivalent absorption coefficient (αeq) is obtained using the

following equation [37]:

2

.g

eq

n

Q

(10)

where ng is the group velocity of the mode, and λ is the free space wavelength. Volume

current formulation was used to estimate the mode scattering losses [38]. The Q factors were

evaluated based on preliminary experimental roughness parameters (10 nm roughness

amplitude and 150 nm correlation length) of the demonstrated high Q (due to thermal reflow)

ChG micro-disk [26]. Future fabrication and characterization studies will fine tune these

parameters. The radiation losses were quantified using a perfectly matched layer. The bulk

absorption coefficient of GLS (0.035 cm1

at 800 nm, and 0.006 cm1

at 4.5 µm [39]) was

multiplied by the mode confinement factor to arrive at the mode absorption losses. The signal

mode gain coefficient and pump mode absorption coefficient can be obtained using:

( , ), ( , ) ( , ). .M

S S S P S

DiskArea

g g I x y I x y f x y dxdy (11)

, , ( , ), ( , ) ( , ). .M

P Er P Er S P P

DiskArea

I x y I x y f x y dxdy (12)

where (x,y) is a coordinate point on the disk cross section, fS/P is the signal or pump mode

power profile normalized to 1 W. This detailed model was used to simulate the micro-disk

laser system under consideration. The simulation results are given in the next section.

3. Simulation results

Including the initial transient evolution of the mode powers and ion populations would require

large simulation time. For this reason, we developed a route which utilizes the previously

explained model to find a self consistent steady state solution. Initially, the signal gain was

calculated as a function of the signal and pump intensities using Eq. (7) and Eq. (8) (Fig. 4).

Linear interpolation was used later to find the gain for the intermediate points. The data range

was chosen to cover the saturation limits. This range was discretized such that the maximum

interpolation error is less than 0.2%. Erbium absorption of the pump light was also calculated

in the same way using Eq. (9).

Signal Intensity (W/m2)Pump Intensity (W/m2)

101

103

105107

109102

104106

108

0.4

0.8

1.2

0Sig

nal g

ain

(dB

/cm

)

Fig. 4. Steady state signal gain as a function of the pump and signal intensity for erbium doped

GLS with concentration of 2.8 × 1020 cm3.

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11957

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The solutions of the fundamental signal mode and the first eight pump radial modes were

calculated, as shown in Fig. 5. For the different pump modes, there are several competing

factors affecting the obtained signal mode gain. First, the signal mode gain can be maximized

by using the pump mode for which the maximum signal intensity overlaps the area having the

maximum gain, i.e. highest pump intensity. However, as shown, the gain can decrease

drastically as the signal intensity increases. In addition, concentrating most of the pump power

at the signal intensity peak is of no benefit in the saturation region. Using the residual power

to pump larger area of the signal mode would result in higher signal mode gain. Since it is not

straightforward to identify the pump mode that results in the highest signal gain, the signal

gain values assoscieated with the considered pump modes should be identified and compared.

PTE11

35 36 37 38 39 400

0.7

PTE13

Heig

ht

from

the s

ubstr

ate

surf

ace (m

)

35 36 37 38 39 400

0.7

PTE15

35 36 37 38 39 400

0.7

PTE17

35 36 37 38 39 400

0.7

STE11

35 36 37 38 39 400

0.7

1.0

2.0

3.0

1.0

2.0

3.0

0.2

0.5

Radial length from the disk center (m)

W / m2

Fig. 5. Intensity distribution of the signal (S) and pump (P) modes with the total mode power

normalized to 1W. Polarization indicated by the subscripts. The first number is the planar index while the second is the radial index.

The signal mode gain was calculated as a function of the internal pump (Pi) and signal (Si)

power using Eq. (11). The mode intensity profiles were discretized into 50 segments per

micron which results in negligible error in estimating the intensity at each grid point. The gain

was interpolated at each grid point using the data obtained in Fig. 4. A comparison between

the obtained signal gain by exciting several pump modes is shown in Fig. 6. It is clear that

pumping the first order mode does not result in the highest possible gain. Higher values can be

achieved by pumping higher order modes. However, going beyond the 8th order mode (not

shown) minimizes the pump signal overlap (Fig. 5) and hence minimizes the signal mode

gain.

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11958

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020

4060100

7550

250

0.2

0.4

0.6

Ga

in (

dB

/cm

)

Fig. 6. Signal mode gain obtained by exciting several pump modes with different radial orders. The gain is computed as a function of the internal signal (Si) and pump (Pi) modes powers.

The passive cavity Q factors and the equivalent absorption coefficients (Eq. (10)) of the

TE11 pump and signal modes are summarized in Table 1. As listed, the losses for both cases

are dominated by scattering. This loss is much greater for the pump mode due to its relatively

small wavelength. As explained in [38], the scattering losses are directly related to the mode

power amplitude within the scattering volume. For the considered pump modes, the difference

in this value was found very small (less than 1%). The pump modes also have ignorable

absorption and radiation losses similar to TE11. Consequently, these modes have close to

equal Q factors. For this reason and because the 7th order mode gives the highest possible

gain, it was chosen to pump the disk. Erbium absorption for the pump mode light was

quantified using Eq. (12) and found to be small at operational pumping power levels.

Table 1. Q factors and Equivalent Absorption Coefficients for the Fundamental Pump

and Signal Modes

Loss type Q Factor Equivalent absorption coefficient (dB/cm)

Pump Signal Pump Signal

Absorption 4.85 × 106 6.10 × 106 0.1607 0.0217

Radiation 1.79 × 108 3.00 × 107 0.0043 0.0043

Scattering 1.50 × 104 2.20 × 106 52.115 0.0565

Total 1.48 × 104 1.53 × 106 52.289 0.0825

The signal power in the disk was calculated as a function of the internal pump power and

the signal coupling coefficient. Due to high internal pump losses, the pump power, and hence

the signal gain, would show high variations along the disk circumference. Therefore, the disk

was discretized azimuthally into 1µm length segments at the disk circumference. The modes

were propagated through these segments, starting from P1 and S1 in Fig. 1 and using Eqs. (3)–

(5). The bisectional method was used to search for the signal power (S1) that satisfies the

steady state lasing conditions given by Eq. (6). The condition was tested for a maximum

tolerance of 0.1%. With the calculated Q factors and the maximum achievable signal gain, the

error in estimating the calculated power is not significant and therefore can be ignored.

The round trip pump power absorption, caused by erbium and the passive cavity losses,

was found to be ~75%. Based on Eq. (1), a pump coupling coefficient of 0.25 would

maximize the pump power accumulation in the disk (P1/Pin) and minimize the needed input

pump power (Fig. 7(a)). This coupling value was used in Eq. (1) to find the input pump power

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11959

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(Pin) that corresponds to P1. Due to the high scattering losses, the maximum power

accumulation is limited to 4. This could be elevated by two orders of magnitude if the

scattering losses in the disk were eliminated as shown in Fig. 7(b).

10-3

10-2

10-1

100

10-2

10-1

100

101

102

103

Power coupling coefficient P

2

Po

we

r a

cc

um

ula

tio

n f

ac

tor

P1/P

in

(a) With scattering

(b) No scattering

Fig. 7. Pump power accumulation as a function of the power coupling coefficient: (a) the continuous line shows the basic case with the scattering losses included (Pump Q = 1.48 × 104)

(b) the dashed line shows the case with no scattering losses taken into account (Pump Q = 4.85 × 106).

Equation (2) was used to find the signal power out-coupled from the disk to the signal bus.

As mentioned previously, the laser performance is tightly related to the signal coupling

coefficient. Figure 8(a) shows the signal output power of the disk for the cavity with the

scattering losses taken into account. The threshold power varies directly with the signal

coupling. For coupling coefficient higher than 2 × 103

, lasing is not possible since the signal

gain is not sufficient to recover the internal and external disk losses. For low signal coupling,

the lasing threshold shows saturation at a minimum of 0.2 mW. However, the slope efficiency

decreases drastically by decreasing the coupling to that level.

The output power peaks at a signal coupling of 4 × 104

. This value of signal coupling

gives an optimized performance for the micro-disk device as it maximizes the slope efficiency

(1.26 × 104

) with a lasing threshold of 0.5 mW. Higher coupling values result in small signal

accumulation. On the other hand, decreasing coupling below that level will increase the

accumulation but only a small fraction of the internal signal power couples to the output bus.

Simulated efficiency of erbium-doped ChG fiber, can achieve ~15% [24]. However, fiber

lasers require long lengths (tens of centimeters) and do not offer suitable solution for on-chip

applications. In contrast, the predicted slope efficiency of the micro-disk is very small but it

offers a compact platform for on-chip applications. The low slope efficiency for the micro-

disk case is caused by the high pump scattering from the sidewall roughness. This results in a

small pump accumulation in addition to a relatively high lasing threshold. Progress is taking

place to reduce these losses [26], for which there is a vast untapped opportunity to enhance

lasing characteristics by two orders of magnitude (Fig. 8(b)).

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11960

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10-6 10-5 10-4 10-3 10-2

101

100

10-1

Sig

na

l po

we

r (μ

W)

1

2

3

10-6 10-5 10-4 10-3 10-2

10-1

10-2

2

6

4

Sig

na

l po

we

r (μ

W)

𝜿𝑺𝟐

𝜿𝑺𝟐

Fig. 8. Output signal power as a function of the pump power and the signal coupling

coefficient. Lasing is only possible with signal coupling smaller than 2 × 103. The peak output

power is obtained at signal coupling of 4 × 104. (a) For the case of including scattering losses,

pump Q = 1.48 × 104, signal Q = 1.53 × 106 and pump coupling coefficient = 0.25, a maximum

slope efficiency of 1.26 × 104 with threshold of 0.5 mW is obtained. (b) For the case of excluding scattering losses, pump Q = 4.8 × 106, signal Q = 6 × 106 and pump coupling

coefficient = 0.0025, a maximum efficiency of 0.025 with 0.02mW threshold can be achieved.

4. Conclusion

We developed a model to simulate MIR lasing for erbium-doped GLS micro-disk. The

optimal coupling coefficients for the signal and pump waveguides were identified. Lasing at

4.5 µm signal using 800 nm pump was shown to be possible with the recently reported

chalcogenide micro-disk quality factor characteristics [26]. With 80 µm disk diameter, 0.6 µm

thickness and erbium concentration of 2.8 × 1020

cm3

, lasing is possible with a maximum

slope efficiency of 1.26 × 104

and threshold of 0.5 mW for pump and signal coupling

coefficients of 0.25 and 2 × 103

, respectively. The efficiency could be improved to ~0.025 if

scattering losses are eliminated.

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11961

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Appendix

Table 2. Rate Equations Parameters of Erbium-Doped GLS System

Emission and absorption cross sections Multi-phonon decay rate

(parameters are found in [40])

e

S

2.5 × 1021 cm2 [25] W2 0

a

P

3 × 1021 cm2 [25] W3 0

a

S

2.5 × 1021 cm2 (Mc-Cumber) W4 800

e

P

0.3 × 1021 cm2 (Mc-Cumber) W5 25

Spontaneous emission rate obtained by Judd-Ofelt (s1) [41] Energy transfer parameters

(cm3/s) [30,31]

a21 546.4 C33 22.5 × 1018

a31 559 C14 5 × 1018

a32 96 C16 5 × 1018

a41 744.3 C44 2 × 1018

a42 174.2 C22 35 × 1018

a43 8 C24 2 × 1018

a51 7076.1 a52 332.3 a53 268 a54 29

Acknowledgments

The authors gratefully acknowledge contributions of Michiel Vanhoutte, from the department

of materials science and engineering at Massachusetts Institute of Technology. This study was

supported by a grant from Masdar Institute of Science and Technology (Abu Dhabi, UAE),

project number 400200.

#144017 - $15.00 USD Received 14 Mar 2011; revised 13 May 2011; accepted 13 May 2011; published 6 Jun 2011(C) 2011 OSA 20 June 2011 / Vol. 19, No. 13 / OPTICS EXPRESS 11962


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