SiNA®/MAiA®
The modular system for anti-reflection coating and passivation
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(03/
2014
)
High performance at lowest cost
Industrially proven high throughput PECVD reactor Excellent SiN and AlOx optical and passivation properties Best Cost of Ownership Modular construction system for high flexibility in throughput and technology Upgrade opportunity for back side passivation
SiNA®/MAiA® – Leading inline coating system
High up-time > 92% Compact design (best tpt/m²) High throughput (scalable to 3,400 wafers/h) Continuous material flow due to continuously operating coating process Meyer Burger OEM automation solutions for loading and unloading are available; other wafer handling systems can also be used
MAiA® – Multiple Access inline Apparatus for various coating processes
Modular based system offers greatest flexibility MAiA® can be customized to run different dielectric layers Usable for special gases like TMA, TMB, phosphine and also your process gas Standard application for back side passivation with aluminium-oxide Throughput up to 3,400 wafers/h
Increase cell efficiency through MB-PERC process with MAiA® system
Back side passivation (PERC) with aluminium oxide (Al2O3) Significant efficiency gain achievable:
- Multi crystalline silicon cell efficiency: >18.5% - Mono crystalline silicon cell efficiency: >20% Flexible PECVD tool
- Al2O3 coating on the back side plus standard AR coating on the front side in one tool and run
Contact Firing
Cell Tester& Sorter
Anti-Reflection Coating,
Passivation
Screen Printing
EmitterDiffusion
Phosphor Glass (PSG)
Etching
Saw DamageEtching &Texturing
Standard c-Si process
Phosphorous Doping
High ef
ficien
cy so
lar ce
ll
Low co
st of
owne
rship
High u
ptim
e
Inline
syste
m
Mod
ular b
uilt u
p
Thro
ughp
ut ad
justa
be
Plasm
a pro
cess
chan
gable
to a
new ap
plicat
ion
Compat
ible to
Man
ufac
turin
g Exe
cutio
n Sys
tem
(MES)
Autom
ation
avail
able
Touc
h scr
een c
ontro
l
Less
than
70db
pump
noise
at en
d pre
ssur
e
Differe
nt sh
apes
of w
afer
Face
up
and/ o
r fac
e dow
n dep
ositio
n
Differe
nt la
yers
SiN x, A
lO x, S
iO x, e
ven m
ore
Gradien
t laye
r
Laye
r thic
knes
s var
iable
Laye
r refr
activ
e ind
ex va
riable
Mor
e tha
n 2 p
roce
ss g
ases
at o
nce
Depos
ition a
nd d
ry et
ching
High te
mper
atur
e till
550°
C
Micr
owav
e plas
ma
High va
cuum
MAiA®
SiNA®
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Leading PECVD coating systemPECVD process
Amorphous hydrogenated silicon nitride (SiN) layers applied by Plasma Enhanced Chemical Vapour Deposition (PECVD) are well suited as anti-reflection and passivation layers on crystalline silicon solar cells. These layers reduce the ratio of reflection on the wafer surface resulting in better sunlight utilization. These layers passivate defects on the silicon surface and in the crystal structure of the silicon bulk material by hydrogenation from the SiN layer leads to an improvement of the electrical properties of the si-licon and thus to a considerable increase of the light conversion efficiency of the solar cell.
SiNA® - Industrial proven system
Roth & Rau belongs to the leading sup-pliers of PECVD equipment in the photovoltaic industry and has been working in this field for a very long time. SiNA® is an industrially proven PECVD reactor which has been designed espe-cially for coating of solar cells. The system is based on an in-line concept where the wafer transport is effected by flat carriers. The highly productive microwave plas-ma sources provide a very homogeneous plasma with a high ratio of chemically active species. Due to excellent coating results and long term process stability SiNA® systems feature a high-up time and low cost of ownership.
High va
cuum
EmitterDiffusion
Phosphor Glass (PSG)
Etching
Anti-Reflection Coating, Rear and Front Side
Passivation (Al2O3, SiNx)Laser
AblationScreenPrint
ContactFiring
MB-PERC process
Anti-Reflection Coating,
Passivation
Anti-Reflection Coating,
Passivation
Anti-Reflection Coating,
Passivation
Anti-Reflection Coating3 PECVD-Layer >>> One system only: MAiA®
MAiA® - Flexible coating system
Some novel solar cell concepts require further and new coating techniques. Roth & Rau accommodates this demand for flexibly configurable coating equipment with the MAiA® platform. MAiA® is a development of the pro-ven anti-reflection coating equipment SiNA® and is capable of coating front and back side of the wafers with materials like silicon nitride, silicon oxide or aluminium oxide within one machine and in one run.
Entry Load Lock(Load Lock Module)
Heat(Buffer Module) Process Module Cooling
(Buffer Module)Exit Load Lock(Load Lock Module)
MAiA® coating system with two process chambers
Contact Firing
Cell Tester& Sorter
Anti-Reflection Coating,
Passivation
Screen Printing
EmitterDiffusion
Phosphor Glass (PSG)
Etching
Saw DamageEtching &Texturing
Standard c-Si process
EmitterDiffusion
Phosphor Glass (PSG)
Etching
Anti-Reflection Coating, Rear and Front Side
Passivation (Al2O3, SiNx)Laser
AblationScreenPrint
Contact Firing
MB-PERC process
Phosphorous Doping
405
1080
Meyer Burger Global AG, [email protected], www.meyerburger.comDesigned and manufactured by Roth & Rau AG
We
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rve
the
right
to m
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chan
ges
refle
ctin
g te
chni
cal p
rogr
ess
(03/
2014
)SiNA® 3400 MAiA®
2in1 3400
Module configuration
Gross TpT [wph] (@6“) 3,400* 3,400*
Net TpT [wph] (@6“) 3,200 3,180
Cycle time / carrier [s] 25 25
No. of plasma sources 6 SiN 2 AlOx + 6 SiN
No. of total chambers 5 9
Uptime [%] > 94* > 93*
Yield − (mech./optical) [%] > 99.5 - (99.9 / 99.6)
Tray size [mm] 1110 x 765
Wafer / tray [pcs] 24 (6x4)
Maintenance cycle time [h] 160
Wafer specificationAll common available wafer sizes as well as wafer shapes can be processed,
number of wafers per carrier may change accordingly as well as final system throughput
L T4PM U6PMU6PML
SiNA MAiA 2in1
Coating Layer SiN SiN SiN SiN AlOx AlOx
Wafer Multi Mono Multi Mono Multi Mono
Layer Parameter – Status
Tk [nm] 80 ± 5 92 ± 5 80 ± 5 92 ± 5 23 ± 5 23 ± 5
Tk uniformity deviation p-t-p ± 3% ± 4% ± 3% ± 4% ± 5% ± 5%
Tk uniformity deviation w-t-w ± 3% ± 4% ± 3% ± 4% ± 5% ± 5%
Tk uniformity deviation r-t-r ± 2% ± 3% ± 2% ± 3% ± 2.5% ± 2.5%
RI 2.1 ± 0.05 2.1 ± 0.05 2.1 ± 0.05 2.1 ± 0.05 1.65 ± 0.05 1.65 ± 0.05
RI uniformity deviation p-t-p ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 2% ± 2%
RI uniformity deviation w-t-w ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5%
RI uniformity deviation r-t-r ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5%
Options
Technical data at a glance
3110
3001
2470
2131
LM +BMI 6PM (SiN/6Q) UM
6266
5028
3610
1990 2220 1990
6200
BMO +
LM +BMI
6PM (SiN/6Q)
BMO + UM
* With industrial proven standard recipe (Roth & Rau)