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SiPM Resent Development and Applications New Developments in Photodetectors June 2005, Beaune Valeri Saveliev Obninsk State University, Russia
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Page 1: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

SiPM Resent Development and Applications

New Developments in PhotodetectorsJune 2005, Beaune

Valeri SavelievObninsk State University, Russia

Page 2: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 2

Single Photon Detection Performance

Page 3: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 3

MRS-APD, Si-PM, ... What is ?

Good detection efficiency (~25% for green range of light)Single photon performance (Intrinsic Gain ~106),Proportional mode for the photon flux (large dynamic range),Operation conditions:

Low Operational Voltage ~50-60 V,Room Temperature,Non Sensitive to Magnetic Field,Minimum Required Electronics,

Miniature size and possibility to combine in matrix.Low cost ( in mass production conditions)

Page 4: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 4

MRS-APD, Si-PM, ... What is ?

Silicon fine Micro CellsStructure on common substrate and with common output

Geiger Mode Operation of micro cells.

Integrated QuenchingMechanism

Page 5: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 5

MRS-APD, Si-PM,... Where ?

CPTA, Moscow: MRS APD with Geiger Mode Operation

JINR, Dubna: Avalanche Micro Channel Photo Detector (new - Micro Cell APD close to SiPM)

Pulsar, Moscow: SiPM

All of them based on the Metal-Resistor-Semiconductor (MRS) Structures

Now, few of the Western Companies and Research Centers trying toget this technology ...

Page 6: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 6

Structure of SiPM’s

“n on p”

Cross of CPTA SiPM (MRS)

Cross of Pulsar SiPM(LCWS2004, M.Danilov ITEP,Moscow )

Page 7: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 7

Structure of SiPM’s “n on p”

Cross of JINR “SiPM”(NIMA 504, 2003, Z.Sadygov)

Page 8: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 8

SiPM Layout

CPTA SiPM

General view 1x1 mm,Common Electrode Layout,Microcells with Quenching Mechanism,

Pulsar SiPM(LCWS2004, M.Danilov ITEP,Moscow )

Page 9: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 9

SiPM PerformanceDetection Efficiency – Product of few main contribution:

Quantum Efficiency of Microcell

For the light range 300-600 nm QE of Siat the level 0.8, and optical absorption coefficient gives the depletion thickness is in order few µm

Geometrical Efficiencythe technology topology gives the limitation of the sensitive area

Probability of Geiger Mode

probability that photoelectron will triggered an avalanche process

The Depletion Area is ~5 µm: Low Resistive Si, Low Biase Voltage

Page 10: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 10

SiPM PerformanceDetection Efficiency – Wavelength Dependent:

QE of Hamamatsu Photonic APD Efficiency of Si-PM

is limited by technology deadlayers on the top of structure

UV region of SiPM

IR region of SiPM

Thickness of Sensitive Layer

Thickness of Dead Layer

Geo

met

ry

is limited by the thickness of depleted layer of SiPM

Absolute value scaling

is limited by geometry factor

The Si-PM has green light sensitivityand total Detection Efficiency for green range of light is ~25%

Page 11: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 11

SiPM PerformanceDark Count Rate – Main Limitation for the size of Sensitive Area of SiPM

Dark Count Rate: Probability that a bulk thermal electrons will trigger an avalanche process (Voltage Dependent) - characterized by frequency,

Dark Count Rate Amplitude: is amplitude of single photoelectron (Geiger Mode Signal)

Typical value of Dark Rate is 0.6 MHz for 1 mm2 of Si-PM (~1500 cells), depleted layer 5 µm (CPTA)

Dark Count Rate is significant limitation for the Single Photon Detection Mode, Forthe measurement of Photons Flux on the level more than ~ 4-5 photoelectrons this factor is negligible, because the amplitudes of Dark Rate Signal is equivalent of Single Photoelectron Signal

Page 12: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 12

SiPM PerformanceDark Count Rate

Q1phe

Q2phe

Q3phe

Dark Count Rate Frequency as function of the treshold at different Bias

Correspondent Dark Current Curve as function of Bias

Page 13: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 13

SiPM PerformanceDynamic Range – is defined by discret structure of SiPM

and correspond of Number of Cells ~1500 photoelectrons (CPTA)

Page 14: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 14

SiPM Performance LED Signal

Resolution of Single Cell

Single Microcell of SiPM –size 20x30 microns (SPAD with Integrated Quenchind Mechanizm)

%8.7=Aσ

chP 84.0=σchQ 34.1=σ

chAAA PQ 14=−=

P Q

%8.7≈Aσ

Q is One Single Cell Signal

Page 15: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 15

SiPM Performance Intrinsic Resolution

Full Size SiPM – 1440 cells ( 20x30 microns)The Intrinsic Resolution of SiPM is very High (for 100 phe ~ few %)

%8.7=AσP

Q1phe

Q3phe

Q2phe

Q4phe

Q5phe

Q6phe

pheN ANA 1×=

pheN N 1σσ =

phe

phe

AN 1

11 σ

Q is One Single Cell Signal

Page 16: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 16

SiPM PerformanceTime Responce

LED Signal LED Signal

Dark rate signal

Fast FE Electrnics ( Pisa University Development )Practically no recharge tail for small LED signalRecharge Tail for the relatively large LED signal

Page 17: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 17

SiPM in Strong Magnetic Field

Test of SiPM in Strong Magnetic Field up to 4 Tesla(Amplitude of SiPM signal in magnetic field with different orientations) (CALICE Meeting, DESY, 30.01.2004)

Page 18: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 18

SiPM Optical Crosstalk

During avalanche breakdown acells emits a photons. These photons should not reach the other cells of the SiPM because this would result in the initiation of breakdown in those cells –Optical Crosstalk.

Spectrum of Emited Photons duringthe Avalanche process in Si for a large current

Page 19: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 19

SiPM Optical Crosstalk

Pulsar SiPM, Optical Cross Tallkas a function of Gain (CALICE Meeting, DESY,7.12.2004)

Without Special Technology, Optical Cross Tallk can be on the level 25-30 % at working point

Page 20: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 20

SiPM Optical CrosstalkCork University Study Result: In the prototypes, the trenches reduce

the probability that a crosstalk event occurs during the detection of an incident photon from 50% to below 1%. Measurements of the cross talk probability versus the distance between the pixels show an excellent agreement with the model (Proc. SPIE,19-25.1.2002, J.Jackson)

CPTA Technology included technology for preventing Optical Crosstalk

Page 21: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 21

Main Efforts

Large Size of SiPM 2x2 mm2, 3x3 mm2,... 10x10 mm2 ???

Main Limitation is Dark Count Rate !!!Cooling

Combine the SiPM in Matrix

Page 22: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 22

Main Efforts UV Enhansment of SiPM (Light with ~400 nm wavelength)

Medical Application,Cherenkov Radiation Detection,...

JINR SiPM CPTA SiPM

Spectrums of 22Na with LSO on the “p on n” SiPM

Page 23: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 23

Applications

DESY International LInear Collider Group, in particularly HadronCalorimeter Activity – is leader in Application and testing of SiPM, few groups from US, Fermilab, SLAC started, Japan few groups started test of SiPM... Pisa University is good progress in Understanding of SiPM for Medical Application, MPI Regina University (Canada) in connection to the Jef Lab, Calorimeter ApplicationCosmic Research Activity, MPI, Russia, AMS experimet Cherenkov DEtectors (necessarz get good single photon detection performance)Exotic Applications, PSI, Liquid Xenon Calorimeter

Page 24: SiPM Resent Development and Applications - IN2P3ndip.in2p3.fr/beaune05/cdrom/Sessions/Saveliev.pdf · SiPM Resent Development and Applications New Developments in Photodetectors June

21 June 2005 Valeri Saveliev, Beaune 2005, Beaune, France 24

Future

Combination of the Sensors and FE Electronics in the same technology Process.(IEEE STQE, v10, Jul-Aug, 2004,C.Niclass)


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