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Solid state lightingSolid state lighting
Maxim Odnoblyudov
Optogan Ltd
Energy efficient and environmental friendly nanotechnology solution
08/24/09 2
Lighting Lighting HistoryHistory
Illumination Market: $12 Bil
+luminophore
08/24/09 3
Manufacturing processManufacturing process
Wafer Epitaxy
Wafer Processing
Back-end & Chip Sorting
Chip packaging
LuminariesSystems
LED fabricationDie fabrication – Main know-how
Module assembly
(+Drivers and
controls)
History History
Founders: Vladislav Bougrov Maxim OdnoblyudovAlexei Kovsh
– 1996: Graduated from St. Petersburg Electrical Engineering University (LETI) Optoelectronics Department at A.F. Ioffe Physico-Technical
Institute
– 1998: PhD in Physics from A.F. Ioffe Physico-Technical Institute
2004: OptoGaN Oy was founded as Finnish limited Company– Established contact with Helsinki University of Technology.
– Joint application to Finnish Technology Agency (TEKES) to finance industrial oriented research.
– First VC financing round
2005: OptoGaN GmbH: Pilot line in Dortmund– Public infrastructure used
– Product- and process development and industrialization
– Low-volume precompetitive production for early market penetration
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OptoGaN facilitiesOptoGaN facilities
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LAB : Helsinki Pilot line : Dortmund
Private equity investment
Public grants in Finland and Germany
Dortmund and NRW investment in equipment
6
Pilotline DortmundPilotline Dortmund
2 shift developmentoperation established
MarketMarket
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MarketMarket
08/24/09 8
08/24/09 9
Market NichesMarket Niches
Drivers for next years
LCD backlights Automotive Illumination
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Energy SavingEnergy Saving
Energy consumption Energy consumption issueissue
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Clean TechnologyClean Technology
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Clean TechnologyClean Technology
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Market by applicationsMarket by applications
08/24/09 Confidential Information 14
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LED Lamp AdvantagesLED Lamp Advantages
Clean technology
Health care – light „quality“
Energy saving
Lifetime – cost of ownership
Size
Cost
Race is on
Illumination Market:
$12 Bil.
40$/klm 1-5$/klm
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LED FormulaLED Formula
To reduce cost per lumen in LED lamps one should maintain or reduce manufacturing costs and increase brightness
Bulb: 700 lm 12 lm/W 60W
LED: 100 lm 100 lm/W 1 W
Problem: Increase of input power vanishes main LED advantages: efficiency and life time drops
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GaN LED ProblemGaN LED Problem
Inherent drawbacks of GaN technology:
Main drawback of GaN technology as compared to conventional III-V materials is absence of cost-effective bulk GaN substrates
This results in:– High density of defects in GaN epitaxial layers grown on foreign substrates
– Low efficiency of light extraction from chips due to strong internal reflection of light on GaN – foreign substrate interface
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Company USPCompany USP
Company USP is possibility to linear increase input power density via high power LED chips without significant loss of efficiency.Company IP consists of:– Epitaxy technology for a unique GaN/Sapphire material quality
– Wafer layer structure optimized for high efficiency at high input power operation
– Chip design enabling uniform current density over chip surface at high input power operation
OptoGaN AchievementsOptoGaN Achievements
Full line chip fabrication production facility
Production type proven technology is at hand
Strong IP portfolio
Team of experienced engineers
LOI with several customers for the chips is signed
Industry leading cost per lumen characteristic:
15$/klm with potential to reach 5$/klm in 2010
08/24/09 19Next step: move to mass production
Technology enables:
increasing input power of high brightness LEDs without loosing efficiencyto achieve bulb-like brightnessutilizing standard GaN/sapphire manufacturing techniquesto achieve bulb-like street pricecurrent technology level gives 15 $/klm
08/24/09 20
Towards to mass production through joint venture
08/24/09 21
Thank you!Thank you!