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CONTACT PERSON REFERENCES GRAPHENE WAFER SCALE INTEGRATION Sha LI 1 , Zhenxing WANG 1 , Oihana TXOPERENA 2 , Mark ALLEN 3 , Yinglin LIU 3 , Ashley RUSHTON 3 , Alexander BESSONOV 3 , Sami KALLIOINEN 4 , Salla KALAJA 4 , Chris BOWER 3 , Tapani RYHANEN 4 , Amaia ZURUTUZA 2 , Max C. LEMME 1,5 , Daniel NEUMAIER 1,6 1 AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany; 2 Graphenea, Paseo Mikeletegi 83, 20009, San Sebastián, Spain ; 3 Emberion Limited, 151, Cambridge Science Park, Milton Road, Cambridge CB4 0GN, United Kingdom; 4 Emberion Oy, Metsänneidonkuja 8, 02130 Espoo, Finland ; 5 Faculty of Electrical Engineering and Information Technology, Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany; 6 School of Electrical, Information and Media Engineering, University of Wuppertal, Campus Freudenberg, Lise-Meitner-Str. 13, 42119 Wuppertal, Germany Challenges Solution: Graphene Fabrication Technology on 150 mm Wafer Platform Graphene has allowed prototyping devices with exceptional performances and potentially huge impact in electronics, photonics and sensor technology. The next big challenge is the wafer-scale integration, as success in real-world applications requires not only outstanding performance at the single-device level but also, large-scale fabrication processes.[1,2] Goals Set up required process modules on a wafer scale platform including encapsulation, contacting and patterning. Define a quality control protocol and ensure batch to batch reproducibility. Manufacture of needed units for the graphene imager product development and validation. [1] G. Fiori et al., Nat. Nanotechnol., 9 (2014) 768–779. [2] D. Neumaier, S. Pindl, M. C. Lemme, Nat. Mat., 18 (2019) 525–529. Successful integration of graphene fabrication technology on 150 mm silicon wafer platform as a needed unit for a new graphene imager product Good batch-to-batch reproducibility, using semi-dry (wafer 1) and wet (wafer 2) transfer methods high device yield of 98% Mobility: 800-1000 cm2/Vs Promising for introduction of high-performing graphene-on-wafer at competitive cost, accelerating innovation for advanced 2DM-based electronics Graphene Wafer Scale Integration Platform * 150 mm proof * 200 mm scale-up compatible Large Scale Growth and Transfer Graphene Foundry Process, including Patterning, Contacting, Encapsulation Imager Functionalisation Funded by the European Union’s Horizon 2020 research and innovation program G-Imager under grant agreement No. 820591. Results: 150 mm Wafer Statistics of Local Back-gated Graphene FETs Sha Li AMO GmbH Aachen, Germany li @amo.de Non-working 2% Working 98% Wafer 1 Non-working Working 433/440 = 98.4% Gate leakage (Igate > 100 nA): 4 No contact (Ichannel < 100 nA): 6 Channel short (Ichannel > 5mA): 0 No modulation (< 10%): 4 Non-working 3% Working 97% Wafer 2 Non-working Working 394/404 = 97.5% Gate leakage (I gate > 100 nA): 3 No contact (I channel < 100 nA): 9 Channel short (I channel > 5mA): 0 No modulation (< 10%): 1 0 1 2 3 4 5 6 Vdirac@forward scan (V) Vdirac@backward scan (V) ∆Vdirac (V) DIRAC POINT AND HYSTERESIS 0 5 10 15 20 Rc*W (kΩ*μm) Rsheet (kΩ/□) RESISTANCE Wafer 1 Wafer 2 Wafer 1 Wafer 2
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