CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 1/13
MTC4503Q8 CYStek Product Specification
N- AND P-Channel Enhancement Mode MOSFET MTC4503Q8
Features
• Low On Resistance
• Low Gate Charge
• Fast Switching Characteristic
Equivalent Circuit Outline
Ordering Information
Device Package Shipping
MTC4503Q8-0-TF-G SOP-8
(Pb-free lead plating and halogen-free package) 4000 pcs / Tape & Reel
SOP-8
MTC4503Q8
Packing spec, TF: 4000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
N-CH P-CH
BVDSS 30V -30V
ID@VGS=(-)10V, TC=25°C 12A -10A
ID@VGS=(-)10V, TA=25°C 6A -5A
RDS(ON) typ. @VGS=(-)10V 15 mΩ 25mΩ
RDS(ON) typ. @VGS=(-)4.5V 20mΩ 38mΩ
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Product name
Pin 1 S1 G1
S2 G2
D2 D2
D1 D1
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 2/13
MTC4503Q8 CYStek Product Specification
Absolute Maximum Ratings (TA=25C)
Parameter Symbol Limits
Unit N-CH P-CH
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current @ VGS=(-)10V, TC=25C *a
ID
12 -10
A
Continuous Drain Current @ VGS=(-)10V, TC=100C *a 8 -6
Continuous Drain Current @ VGS=(-)10V, TA=25C *b 6 -5
Continuous Drain Current @ VGS=(-)10V, TA=70C *b 5 -4
Pulsed Drain Current *c IDM 24 -20
Continuous Body Diode Forward Current @ TC=25C *a IS 4 -4
Avalanche Current @ L=0.1mH IAS 10 -15
Avalanche Energy @ L=0.5mH EAS 9 16 mJ
Total Power
Dissipation
TC=25C *a
PD
5.7
W TC=100C *a 2.3 TA=25C *b 1.5 TA=70C *b 1
Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 C
Thermal Data
Parameter Symbol Steady State Unit
Thermal Resistance, Junction-to-case RθJC 22 C/W
Thermal Resistance, Junction-to-ambient *b RθJA
86
Note:
*a. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
*b. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The
value in any given application depends on the user’s specific board design.
*c. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
low duty cycles to keep initial TJ=25°C.
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 3/13
MTC4503Q8 CYStek Product Specification
N-Channel Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BVDSS 30 - - V
VGS=0V, ID=250μA
VGS(th) 1 - 2.5 VDS=VGS, ID=250μA
GFS - 5.4 - S VDS=10V, ID=3A
IGSS - - ±100 nA VGS=±20V, VDS=0V
IDSS - - 1 μA VDS=24V, VGS=0V
RDS(ON) - 15 19
mΩ VGS=10V, ID=6A
- 20 26 VGS=4.5V, ID=4A
Dynamic
Ciss - 510 -
pF VDS=15V, VGS=0V, f=1MHz Coss - 75 -
Crss - 58 -
Rg - 4.5 - Ω f=1MHz
Qg *1, 2 - 13 -
nC VDS=15V, ID=6A, VGS=10V Qgs *1, 2 - 1.6 -
Qgd *1, 2 - 2.5 -
td(ON) *1, 2 - 5.6 - ns VDS=15V, ID=6A, VGS=10V, RGS=1Ω
tr *1, 2 - 7.5 -
td(OFF) *1, 2 - 26 - tf *1, 2 - 4.5 -
Source-Drain Diode
VSD *1 - 0.85 1.2 V IS=6A, VGS=0V
trr - 7 - ns IF=6A, dIF/dt=100A/μs
Qrr - 3 - nC
Note:
*1. Pulse Test : Pulse Width 300μs, Duty Cycle2% *2. Independent of operating temperature
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 4/13
MTC4503Q8 CYStek Product Specification
P-Channel Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BVDSS -30 - - V
VGS=0V, ID=-250μA
VGS(th) -1 - -2.5 VDS=VGS, ID=-250μA
GFS - 5.7 - S VDS=-10V, ID=-5A
IGSS - - ±100 nA VGS=±20V, VDS=0V
IDSS - - -1 μA VDS=-24V, VGS=0V
RDS(ON) - 25 34
mΩ VGS=-10V, ID=-5A
- 38 49 VGS=-4.5V, ID=-4A
Dynamic
Ciss - 1000 -
pF VDS=-15V, VGS=0V, f=1MHz Coss - 110 -
Crss - 95 -
Rg - 22 - Ω f=1MHz
Qg *1, 2 - 20 -
nC VDS=-15V, ID=-5A, VGS=-10V Qgs *1, 2 - 3.8 -
Qgd *1, 2 - 4 -
td(ON) *1, 2 - 8.2 - ns VDS=-15V, ID=-5A, VGS=-10V, RGS=10Ω
tr *1, 2 - 18 -
td(OFF) *1, 2 - 65 - tf *1, 2 - 28 -
Source-Drain Diode
VSD *1 - -0.85 -1.2 V IS=-5A, VGS=0V
trr - 11 - ns IF=-5A, dIF/dt=100A/μs
Qrr - 6 - nC
Note:
*1. Pulse Test : Pulse Width 300μs, Duty Cycle2% *2. Independent of operating temperature
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 5/13
MTC4503Q8 CYStek Product Specification
Typical Characteristics : Q1( N-channel )
0
5
10
15
20
25
0 2 4 6 8 10
ID, D
rain
Cur
rent
(A)
VDS, Drain-Source Voltage(V)
Typical Output Characteristics
VGS=2.5V
10V, 9V, 8V, 7V, 6V, 5V, 4V,3.5V
3V
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
BV
DS
S, N
orm
aliz
ed D
rain
-Sou
rce
Bre
akdo
wn
Vol
tage
TJ, Junction Temperature(°C)
Breakdown Voltage vs Ambient Temperature
ID=250μA
VGS=0V
5
10
15
20
25
30
0 5 10 15 20
RD
S(O
N),
Sta
tic
Dra
in-S
ourc
e O
n-S
tate
Res
ista
nce(
mΩ
)
ID, Drain Current(A)
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
VGS=10V
0.2
0.4
0.6
0.8
1
1.2
0 5 10 15 20
VSD
, S
ourc
e-D
rain
Vol
tage
(V)
IS, Body Diode Current(A)
Body Diode Current vs Source-Drain Voltage
TJ=25°C
TJ=150°C
0
10
20
30
40
50
0 2 4 6 8 10
RD
S(O
N),
Sta
tic
Dra
in-S
ourc
e O
n-S
tate
Res
ista
nce(
mΩ
)
VGS, Gate-Source Voltage(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
ID=6A
0
0.5
1
1.5
2
2.5
-75 -50 -25 0 25 50 75 100 125 150 175
RD
S(O
N),
Nor
mal
ized
Sta
tic
Dra
in-S
ourc
e O
n-
Sta
te R
esis
tanc
e
TJ, Junction Temperature(°C)
Drain-Source On-State Resistance vs Junction Temperature
VGS=10V, ID=6A
RDS(ON)@TJ=25°C : 15mΩ typ.
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 6/13
MTC4503Q8 CYStek Product Specification
Typical Characteristics (Cont.) : Q1( N-channel)
10
100
1000
0 10 20 30
Cap
acit
ance
(pF
)
VDS, Drain-Source Voltage(V)
Capacitance vs Drain-to-Source Voltage
Coss
Ciss
Crss
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25 0 25 50 75 100 125 150 175V
GS(t
h), N
orm
aliz
ed T
hres
hold
Vol
tage
TJ, Junction Temperature(°C)
Threshold Voltage vs Junction Temperature
ID=250μA
ID=1mA
0.01
0.1
1
10
0.001 0.01 0.1 1 10
GFS, F
orw
ard
Tra
nsfe
r A
dmit
tanc
e(S
)
ID, Drain Current(A)
Forward Transfer Admittance vs Drain Current
TA=25°C
Pulsed
VDS=15V
VDS=10V
0
2
4
6
8
10
0 2 4 6 8 10 12 14
VG
S, G
ate-
Sou
rce
Vol
tage
(V)
Qg, Total Gate Charge(nC)
Gate Charge Characteristics
VDS=15V
ID=6A
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID, D
rain
Cur
rent
(A)
VDS, Drain-Source Voltage(V)
Maximum Safe Operating Area
DC
10ms
1ms
100μsRDS(ON)
Limited
TA=25°C, TJ=150°C, VGS=10V
RθJA=86°C/W,Single Pulse
1s
100ms
10s
0
1
2
3
4
5
6
7
25 50 75 100 125 150 175
ID, M
axim
um D
rain
Cur
rent
(A)
TJ, Junction Temperature(°C)
Maximum Drain Current vs Junction Temperature
VGS=10V,
RθJA=86°C/W
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 7/13
MTC4503Q8 CYStek Product Specification
Typical Characteristics (Cont.) : Q1( N-channel)
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Pow
er (
W)
Pulse Width(s)
Single Pulse Power Rating, Junction to Ambient
TJ(MAX)=150°C
TA=25°CRθJA=86°C/W
0.001
0.01
0.1
1
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
r(t)
, Nor
mal
ized
Eff
ective
Tra
nsie
nt T
herm
al R
esis
tanc
e
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
Single Pulse
0.01
0.05
0.1
0.2
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=86°C/W
0.02
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 8/13
MTC4503Q8 CYStek Product Specification
Typical Characteristics : Q2( P-channel)
0
5
10
15
20
25
0 2 4 6 8 10
-ID, D
rain
Cur
rent
(A
)
-VDS, Drain-Source Voltage(V)
Typical Output Characteristics
-10V, -9V, -8V, -7V,-6V,-5V
VGS=-3V
-4V
-3.5V
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
-BV
DS
S, N
orm
aliz
ed D
rain
-Sou
rce
Bre
akdo
wn
Vol
tage
TJ, Junction Temperature(°C)
Breakdown Voltage vs Ambient Temperature
ID=-250μA
VGS=0V
10
20
30
40
50
0 5 10 15 20
RD
S(o
n), S
tatic
Dra
in-S
ourc
e O
n-S
tate
Res
ista
nce(
mΩ
)
-ID, Drain Current(A)
Static Drain-Source On-State resistance vs Drain Current
VGS=-4.5V
VGS=-10V
0.2
0.4
0.6
0.8
1
1.2
0 5 10 15 20
-VS
D, S
ourc
e-D
rain
Vol
tage
(V)
-IS, Body Diode Current(A)
Body Diode Current vs Source-Drain Voltage
TJ=25°C
TJ=150°C
0
20
40
60
80
100
0 2 4 6 8 10
RD
S(o
n), S
tati
c D
rain
-Sou
rce
On-
Sta
te
Res
ista
nce(
mΩ
)
-VGS, Gate-Source Voltage(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
ID=-5A
0
0.5
1
1.5
2
2.5
-75 -50 -25 0 25 50 75 100 125 150 175
RD
S(o
n), N
orm
aliz
ed S
tati
c D
rain
-Sou
rce
On-
Sta
te
Res
ista
nce
TJ, Junction Temperature(°C)
Drain-Source On-State Resistance vs Junction Temperature
VGS=-10V, ID=-5A
RDS(ON)@TJ=25°C : 25mΩ typ.
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 9/13
MTC4503Q8 CYStek Product Specification
Typical Characteristics (Cont.) : Q2(P-channel)
10
100
1000
10000
0 10 20 30
Cap
acit
ance
(pF
)
-VDS, Drain-Source Voltage(V)
Capacitance vs Drain-to-Source Voltage
Coss
Ciss
Crss
0.2
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25 0 25 50 75 100 125 150 175
-VG
S(t
h), T
hres
hold
Vol
tage
(V)
TJ, Junction Temperature(°C)
Threshold Voltage vs Junction Temperature
ID=-250μA
ID=-1mA
0.01
0.1
1
10
0.001 0.01 0.1 1 10
GFS, F
orw
ard
Tra
nsfe
r A
dmit
tanc
e(S
)
-ID, Drain Current(A)
Forward Transfer Admittance vs Drain Current
TA=25°CPulsed
VDS=-15V
VDS=-10V
0
2
4
6
8
10
0 5 10 15 20 25
-VG
S, G
ate-
Sou
rce
Vol
tage
(V)
Qg, Total Gate Charge(nC)
Gate Charge Characteristics
VDS=-15V
ID=-5A
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-ID, D
rain
Cur
rent
(A)
-ID, Drain-Source Voltage(V)
Maximum Safe Operating Area
DC
10ms
100ms
100μs
TA=25°C, TJ=150°C, VGS=-10VRθJA=86°C/W, Single Pulse
1s
1ms
RDS(ON)Limited
10s
0
1
2
3
4
5
6
25 50 75 100 125 150 175
-ID, M
axim
um D
rain
Cur
rent
(A)
TJ, Junction Temperature(°C)
Maximum Drain Current vs Junction Temperature
VGS=-10V,
RθJA=86°C/W
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 10/13
MTC4503Q8 CYStek Product Specification
Typical Characteristics (Cont.) : Q2(P-channel)
Recommended Soldering Footprint
0
100
200
300
400
500
600
700
0.0001 0.001 0.01 0.1 1 10 100
Pow
er (
W)
Pulse Width(s)
Single Pulse Power Rating, Junction to Ambient
TJ(MAX)=150°C
TA=25°CRθJA=86°C/W
0.001
0.01
0.1
1
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
r(t)
, Nor
mal
ized
Eff
ective
Tra
nsie
nt T
herm
al R
esis
tanc
e
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=86°C/W
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 11/13
MTC4503Q8 CYStek Product Specification
Reel Dimension
Carrier Tape Dimension
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 12/13
MTC4503Q8 CYStek Product Specification
Recommended wave soldering condition Product Peak Temperature Soldering Time
Pb-free devices 260 +0/-5 C 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate
(Tsmax to Tp) 3C/second max. 3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C 60-120 seconds
150C
200C 60-180 seconds
Time maintained above: −Temperature (TL) − Time (tL)
183C 60-150 seconds
217C 60-150 seconds
Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C
Time within 5C of actual peak temperature(tp)
10-30 seconds 20-40 seconds
Ramp down rate 6C/second max. 6C/second max.
Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 13/13
MTC4503Q8 CYStek Product Specification
SOP-8 Dimension
*: Typical
DIM Millimeters Inches
DIM Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157
A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244
A2 1.350 1.550 0.053 0.061 e *1.270 *0.050
b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050
c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8°
D 4.700 5.100 0.185 0.200
Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking:
8-Lead SOP-8 Plastic Package CYStek Package Code: Q8
Date Code
Device Name 4503SS □□□□ X
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : production serial number, 01~99
Assembly
Site Code
Assembly Site Code : blank→ Site 1, G →Site 2