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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK2409 MANUFACTURER: NEC Corporation REMARK: Body Diode (Professional) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL PARAMETERS
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristics
Circuit Simulation Result
0
5
10
15
20
25
30
0 2 4 6 8 10 12
Drain Curent -Id (A)
Tra
nsco
nd
ucta
nce -
Gfs
(s)
Measurement
Simulation
Comparison table
Id(A) gfs(s)
Error(%) Measurement Simulation
1.000 7.813 7.874 0.787
2.000 10.811 10.811 0.000
5.000 16.835 16.077 -4.502
10.000 22.222 21.231 -4.459
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V_VGS
0V 2V 4V 6V 8V 10V
I(V2)
100mA
1.0A
10A
100A
1.0KA
Vgs-Id Characteristics
Circuit Simulation Result
Evaluation circuit
0
V2
VDD10Vdc
U12sk2409
VGS0Vdc
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.1
1
10
100
1000
0 5 10
Gate to Source Voltage - VGS (V)
Dra
in C
urr
en
t -
ID (
A)
Measurement
Simulation
Comparison Graph Circuit Simulation Result
Comparison table
ID(A) VGS(V)
Error (%) Measurement Simulation
1.000 2.000 1.994 -0.300
2.000 2.080 2.103 1.106
5.000 2.350 2.392 1.787
10.000 2.620 2.601 -0.725
20.000 3.000 3.014 0.467
50.000 3.850 3.935 2.208
100.000 5.180 5.000 -3.475
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V_VDD
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V2)
0A
2A
4A
6A
8A
10A
12A
14A
16A
18A
20A
*Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=20A, VGS=10V Measurement Simulation Error (%)
RDS (on) 22 m 22.022 m 0.100
0
VGS10Vdc
0
U12sk2409
VDD10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
0s 20us 40us 60us 80us 100us
V(W1:3)
0V
2V
4V
6V
8V
10V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=48V,ID=40A ,VGS=-10V
Measurement Simulation Error (%)
Qgs 5.00 nC 5.22 nC 4.400
Qgd 25.00 nC 25.00 nC 0.640
Qg 7.30 nC 7.31 nC 0.137
0
I2
Vsense
DbreakD1
I1
40Adc
-
+W1
ION = 0AIOFF = 1.1mA
W VD48Vdc
U12SK2409
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
1 1550 1500 0.065
2 1340 1320 0.075
5 1020 1030 0.098
10 770 775 0.130
20 560 550 0.179
50 350 340 0.286
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
0.8us 1.0us 1.2us 1.4us 1.6us
V(L3:2) I(Vsense)/2
0V
1V
2V
3V
4V
5V
6V
7V
8V
9V
10V
11V
12V
13V
14V
Switching Time Characteristic Circuit Simulation result
Evaluation circuit
Simulation Result
ID=20A, VDD=30V VGS=0/10V
Measurement Simulation Error(%)
td(on) 30 ns 30.01 ns 0.063
VGS
ID
U12sk2409
RL
1.5
L3
30nH
2
Vsense
0
3
VD30.5Vdc
V1
TD = 1u
TF = 10n
PW = 5u
PER = 10u
V1 = 0
TR = 10n
V2 = 10R1
10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V_VDD
0V 2V 4V 6V 8V 10V 12V 14V 16V
I(V2)
0A
20A
40A
60A
80A
100A
Output Characteristic
Circuit Simulation result
Evaluation circuit
6.0V
10.0V
4.0V
U12sk2409
VDS10Vdc
0
V2
VGS10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V_VDS
0V 1.0V 2.0V 3.0V
I(V2)
100mA
1.0A
10A
100A
1.0KA
BODY DIODE SPICE MODEL Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
VDS
0Vdc
V2
VGS0Vdc
0
U12sk2409
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
1
10
100
1000
0 1 2 3
VDS-Source to Drain Voltage-V
IS
D-D
iod
e F
orw
ard
Cu
rren
t -
AMeasurement
Simulation
Comparison Graph Circuit Simulation Result
Simulation Result
ISD(A)
VDS(V)
%Error Measurement Simulation
1.000 0.675 0.675 0.000
2.000 0.705 0.704 -0.142
5.000 0.770 0.758 -1.558
10.000 0.830 0.823 -0.843
20.000 0.940 0.927 -1.383
50.000 1.250 1.202 -3.840
100.000 1.700 1.630 -4.118
170.000 2.300 2.155 -6.304
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
5.5us 5.7us 5.9us 6.1us 6.3us 6.5us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 57.200 ns 56.710 ns -0.857
trb 152.000 ns 151.360 ns -0.421
trr 209.200 ns 208.070 ns -0.540
R1
50
0
U1
D2SK2409_PRO
V1TD = 78n
TF = 10n
PW = 5.7u
PER = 100us
V1 = -9.5V
TR = 10n
V2 = 10.6
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference
Trj=57.2(ns) Trb=152(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V2)
0A
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
1.0mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
U12SK2409
V2
VGS0Vdc
ID
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference