SPICE MODEL of 2SK3911 (Standard+BDS Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SK3911 MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Diode


Circuit Configuration


MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


0

2

4

6

8

10

12

14

16

18

20

1 3 5 7 9 11 13 15 17 19

ID - Drain Current - A

gfs

Measurement

Simulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

1 4.800 4.882 1.708

2 6.150 6.250 1.626

5 10.500 10.638 1.314

10 13.700 13.889 1.380

20 17.500 17.544 0.251


Vv ariable

10Vdc

V3

0Vdc

U27

2SK3911

V2

10Vdc

0

V_V2

0V 2V 4V 6V 8V 10V

I(V3)

0A

10A

20A

30A

40A

50A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


1.00

3.00

5.00

7.00

9.00

11.00

13.00

15.00

17.00

19.00

0 2 4 6 8 10

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urr

en

t -

A

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

1 4.800 4.876 1.583

2 5.000 5.048 0.960

5 5.350 5.413 1.178

10 5.750 5.838 1.530

20 6.400 6.464 1.000


0

V3

0Vdc

VGS

10Vdc

U27

2SK3911

VDS

0Vdc

V_VDS

0V 1.0V 2.0V 3.0V 4.0V 5.0V

I(V3)

0A

2A

4A

6A

8A

10A

12A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=10A, VGS=10V Measurement Simulation Error (%)

RDS (on) 0.220 0.220 0


D1

Dbreak

0

I220Adc

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

V2

0Vdc

V1400Vdc

-

+W1

ION = 0uAIOFF = 1mA

W

U27

2SK3911

Time*1mS

0 20n 40n 60n 80n 100n

V(W1:3)

0V

4V

8V

12V

16V

20V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=400V,ID=20A ,VGS=10V

Measurement Simulation Error (%)

Qgs(nC) 25.000 25.451 1.804

Qgd(nC) 13.000 13.063 0.485

Qg 58.000 55.631 -4.084


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.1 5600 5610 0.179

0.2 5300 5291 -0.170

0.5 4430 4435 0.113

1 3600 3608 0.222

2 2840 2841 0.035

5 2000 1991 -0.450

10 1320 1332 0.909

Simulation

Measurement


L2

50nH

U30

2SK3911

R3

4.7

L1

30nH

0

V2TD = 1u

TF = 1nPW = 10uPER = 200u

V1 = 0

TR = 1n

V2 = 20V1

200Vdc

R2

20

R1

4.7

Time

1.000us 1.100us 1.200us0.921us 1.299us

V(L2:1)/20 V(L1:2)

0V

2V

4V

6V

8V

10V

12V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=10 A, VDD=200V VGS=0/10V

Measurement Simulation Error(%)

Ton(ns) 45.000 45.089 0.198

VGS

ID


Vstep

10Vdc

Vv ariable

10Vdc

Vdsense

0Vdc

U30

2SK3911

0

V_Vvariable

0V 4V 8V 12V 16V 20V

I(Vdsense)

0A

10A

20A

30A

40A

50A

Output Characteristic


Evaluation circuit

VGS=5V

5.5V

6.V

6.5V

7V


R1

0.01m

V1

0Vdc

0

U27

2SK3911

V_V1

0V 0.4V 0.8V 1.2V 1.6V 2.0V

I(R1)

1.0A

10A

100A

BODY DIODE SPICE MODEL Forward Current Characteristic


Evaluation Circuit


0.10

1.00

10.00

100.00

0 0.4 0.8 1.2 1.6

Source-Drain voltage VSD(V)

Dra

in r

evers

e c

urr

en

t ID

R(A

)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A)

VSD(V)

%Error Measuremen Simulation

0.1 0.580 0.584 0.690

0.2 0.610 0.614 0.656

0.5 0.650 0.654 0.615

1 0.680 0.685 0.735

2 0.710 0.720 1.408

5 0.770 0.772 0.260

10 0.820 0.828 0.976

20 0.910 0.906 -0.440


U30

2SK3911V1

TD = 0.4u

TF = 19nsPW = 8usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.7v

0

R1

50

Time

2us 4us 6us 8us 10us 12us 14us 16us 18us 20us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Trr(ns) Measurement Simulation Error (%)

Trj+Trb 3.500 3.598 2.800


Reverse Recovery Characteristic Reference

Trj=2.000(us) Trb=1.500(us) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


0

U28

2SK3911

R1

0.01m

R2

100MEG

V1

0Vdc

V_V1

0V 10V 20V 30V 40V 50V 60V 70V 80V 90V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

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SPICE MODEL of 2SK3911 (Standard+BDS Model) in SPICE PARK

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