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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: TPCA8015-H MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
1.000 23.000 23.274 1.191
2.000 30.000 31.004 3.347
5.000 45.000 45.471 1.047
10.00 60.000 59.683 -0.528
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U2TPCA8015-H
V110Vdc
V210Vdc
0
V3
0Vdc
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
0A
20A
40A
60A
80A
100A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
2.000 2.600 2.702 3.919
5.000 2.690 2.781 3.398
10.000 2.810 2.878 2.406
20.000 2.970 3.026 1.872
50.000 3.300 3.361 1.839
100.000 3.800 3.804 0.116
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U2TPCA8015-H
V110Vdc
V210Vdc
0
V3
0Vdc
V_V2
0V 200mV 400mV 500mV
I(V3)
0A
2.5A
5.0A
7.5A
10.0A
12.5A
15.0A
17.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=17.5A, VGS=10V Measurement Simulation Error (%)
RDS (on) 4.400 m 4.460 m 1.364
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
-
+W1
ION = 0uAIOFF = 10mW
ROFF = 100GRON = 1m
0
D1Dbreak
U2TPCA8015-H
I2DC = 35Adc
V132Vdc
V20Vdc
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 10m
TR = 10n
Time*1m
0s 10ns 20ns 30ns 40ns
V(U2:4)
0V
4V
8V
12V
16V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=32V,ID= 35A ,VGS=5V
Measurement Simulation Error (%)
Qgs 7.000 nC 7.288 nC 4.114
Qgd 9.000 nC 8.640 nC 4.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 2120.000 2100.000 -0.943
0.200 2060.000 2000.000 -2.913
0.500 1750.000 1760.000 0.571
1.000 1500.000 1500.000 0.000
2.000 1200.000 1250.000 4.167
5.000 780.000 790.000 1.282
10.000 550.000 560.000 1.818
20.000 400.000 405.000 1.250
40.000 290.000 280.000 -3.448
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
2
V1
TD = 5u
TF = 6nPW = 5uPER = 10u
V1 = 0
TR = 6n
V2 = 20
L2
50nH
3
0
VDD
20
V30Vdc
0
R4
4.7
U2TPCA8015-H
R3
4.7RL
1.11
L1
30nH
0 0
Time
4.980us 5.000us 5.020us 5.040us 5.060us4.962us
V(2) V(3)/2
0V
1V
2V
3V
4V
5V
6V
7V
8V
9V
10V
11V
12V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=17.5A, VDD= 20V VGS=0/10V
Measurement Simulation Error(%)
ton 12.000 ns 12.029 ns 0.242
VGS
ID
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U2TPCA8015-H
V110Vdc
V210Vdc
0
V3
0Vdc
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
20A
40A
60A
80A
100A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= 2.8V
3.0V
3.2 V
3.4 V
3.5 V
3.7 V 4
6
3.8 V
4.5
10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U2
TPCA8015-H
V1
0Vdc
0
R1
0.01m
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VSD(V)
%Error Measurement Simulation
0.100 0.590 0.587 -0.508
0.200 0.605 0.604 -0.165
0.500 0.627 0.627 0.000
1.000 0.645 0.646 0.155
2.000 0.665 0.666 0.150
5.000 0.700 0.697 -0.429
10.000 0.730 0.727 -0.411
20.000 0.770 0.765 -0.649
50.000 0.830 0.830 0.000
100.000 0.900 0.900 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 18.000 ns 17.934 ns -0.367
trb 112.000 ns 110.345 ns -1.478
trr 130.000 ns 128.279 ns -1.324
0
R1 50
V1
TD = 60n
TF = 10n
PW = 1u
PER = 2u
V1 = -9.4V
TR = 12n
V2 = 10.6V
TPCA8015-H
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference
Trj=18 (ns) Trb=112(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
0Vdc
R1
0.01m
U7
TPCA8015_H
Ropen
100MEG
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference