Spin Torque and Magnetic Tunnel Junctions
Ed Myers, Frank Albert, Ilya Krivorotov, Sergey Kiselev, Nathan Emley, Patrick Braganca, Greg Fuchs, Andrei Garcia,
Ozhan Ozatay, Eric Ryan, Jack Sankey, John Read, Phillip Mather, Dan Ralph
Jordan Katine and Daniele Mauri (HGST)
Outline
Spin torque switching in spin valves Switching speedsAsymmetry of switching currents (spin torque and spin accumulation)Reducing switching current levels
Non-uniform spin torque systemsSwitching by concentrated spin current injectionVortex spin torque oscillator
Spin torque in magnetic tunnel junctionProbing spin torque as function of tunnel junction bias
Realizing Spin Transfer Effects
Nanopillar GMRSPIN VALVE
Py (2 nm)
Py (12 nm)Cu (6 nm)
Cu
Cu
free layer
fixed layer
Conventional ferromagnet spin transfer devices require lateral dimensions ≤250 nm to avoid significant self-field effects from required current levels
Low impedance ~ 0.01 Ω-µm2
GMR (∆R/R) ~ 10-20%High impedance ~ 1 - 100 Ω-µm2
GMR (∆R/R) ~ < 50-90+%(varies with barrier thickness)
Critical current densities quite similar in good spin valves and MTJsHigh polarization of MTJs may give a ~ 2x advantage
Nanopillar MAGNETIC TUNNEL JUNCTION
Py (2 nm)
Py (12 nm)AlOx (~0.7 nm
Cu
Cu
free layer
fixed layer
Practical issues for spin-torque switching: speed, switching currents, impedance
5.1
5.3
5.5
0 600 1200Magnetic Field [G]
dV/d
I [O
hm]
5.1
5.3
5.5
-1 -0.5 0 0.5 1Current [mA]
dV/d
I [O
hm]
T = 4.2 KNanopillar Spin-Valve
Py (2 nm)
Py (12 nm)Cu (6 nm)
Cu
Cu
free layer
fixed layer
Spin Transfer Driven Magnetic Reversal
~120 nm
~40 nm
ChallengesIn “standard” nanopillar devices, initial direction of spin torque is determined by a random thermal fluctuation from equilibrium. This leads to a random phase of the precessional dynamics.
Time-resolved measurements require devices with a non-zero angle between the free and the fixed layers.
( )θτ sin~ 2 ⋅=××→→→→
ImmImst
fixed layer
M
free layer
m
τst
free layer
m
fixed layer
M
τst
1)sin( <<θ 1)sin( ≈θ
V(t) < 1 mV, ∆t ~ 10-100 psec
Time Resolved Measurements of Nanomagnet Dynamics
T > 0
Sampling OscilloscopeStep Generator
dc
+25 dB
Measurements of Spin-Transfer Dynamics
Py (4 nm)
Py (4 nm)Cu (8 nm)
Cu
Cu
free layer
fixed layerIrMn (8 nm)
~ 130 nm
~ 60 nmHEB
HEB = exchange bias field
I. N. Krivorotov et al.Science 307, 228 (2005).
Exchange biasing of the fixed Py layer at 45º to the easy axis results in a non-zero initial angle between magnetic moments of the fixed and free layers. This establishes a well-defined phase for precessional dynamics of the magnet.
5.9
5.95
6
6.05
6.1
-400 -200 0 200 400 600
Filed (G)
dV/d
I (O
hm)
Happlied
Mfixed
Mfree
θ0
- data- Stoner-Wolfarth fit
Equilibrium Configuration of Magnetization
θ0~ 35°
( )( )2/cos1
2/cos12
2
0 θχθ
+−
∆+= RRR
χ = 0.5; Heb = 1.5 kG
Sample 2
High Speed Spin Torque Switching
switching time1 → τ =
θ0 ~ initial angle betweenmagnetizations
-set by thermal fluctuations or magnetic pinning
Ic0 is T= 0 critical current
co
0
II2
πln
−
⎟⎠⎞⎜
⎝⎛
θ
1J.Sun, Phys Rev B. 62, 570 (2000)
Faster reversal requires larger Iswitch
Spin polarized current must deliver sufficient spin angular momentum to nanomagnet to reverse magnetic moment.
Hence (I –Ic0)x τ = constant
How fast is spin-transfer-driven switching?
Sampling Oscilloscope
Step Generator
dc
+25 dB
Switching time < 1 ns at high pulse amplitude
Measure time dependent response of nanopillar resistance to step pulse.
I. N. Krivorotov et al.Science 307, 228 (2005).
Ico+ = α e Ms Vol [H + Han + 2 π Ms ] / hg(0) ≈ 2 π α e Ms
2 Vol / h g(0)
Ico- = α e Ms Vol [H - Han - 2 π Ms ] / hg(π) ≈ 2 π α e Ms
2 Vol / h g(π)
Jco+ ≈ 2 π α e Ms
2 t / h g(0); Jco+ ≈ 2 π α e Ms
2 t / h g(π)
t = nanomagnet thickness, α =Gilbert damping parameter, Ms = magnetization
Han = shape anisotropy field
Critical Current for Spin Torque Switching
Han
4 π Ms
out of plane demagnetization
field top view
To reduce Jco - reduce t, Ms and/or α but must maintain nanomagnet stability
This requires UK = MsHan Vol /2 > 50 kBT - ten year bit stability
Ic ∝ Ms2 α (Vol)
U0 ∝ HanMs(Vol)Han ~ Ms(t/t0)
U0
MRAM requirement:Bit lifetime ~ 10 years → U0 = 1 eV at RTWith heating to 100º C → U0 = 1.3 eV
~120 nm
~40 nm
Minimize Ms and sample volume Use shape anisotropy to maximize Hk
thick and elongated
Decreasing Switching Currents
4.5 nm Py : U0,P-AP=0.85 eV, Ic0+ = .42 mA
U0,AP-P=0.73 eV, Ic0- = .39 mA
Ic0 = zero-temp critical current. Need Ico < 100 µANeed to decrease damping and improve micromagnetics
Spin torque switching currents of low Ms free layers
Pulse-response measurementsPulse Generator
dc
+25 dB
Apply current pulse to device.
Determine if pulse has switched device.
Increase pulse duration until probability of switching goes to unity.
Increase current pulse amplitude and repeat.
0.0 0.5 1.0 1.5 2.0 2.5
0.0
0.2
0.4
0.6
0.8
1.0
Sw
itchi
ng P
roba
bilit
y
Pulse Amplitude (mA)
100 ns30 ns10 ns 3 ns1 ns
Comparison with Single Domain LLG Simulations
0.0
0.2
0.4
0.6
0.8
1.0
Sw
itchi
ng P
roba
bilit
y
0.5 1.0 1.5 2.0 2.5
simulationsdata
Pulse Amplitude (mA)
1 ns3 ns100 ns
0.0 0.2 0.4 0.6 0.8 1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
p-apap-p
I50
%(m
A)
τ -1 (ns -1 )
Fitting to LLG simulation yields empirical spin-torque function and damping
N.B. Similar AP-P and P-AP switching currents in these devicesBraganca et al. APL ‘05
Spin Transfer Torque Function
– effect of device geometry on g(θ )–spin accumulation affects?
0 π /2 π
0.050.1
0.150.2
0.250.3
g
g(θ) – Slonczewski 1996
g(θ) – Cornell (exp.)
Ic, P - AP ~ g’(0) ; Ic, AP - A ~ g’(π)
( ) ( )mImmmHmmeff ××+⎟
⎠⎞
⎜⎝⎛ ×−×=
)sin()(
2 θθµαγ
mg
edtd
dtd B
g(θ) – Xiao, et al.
See also: Manschot et al., APL.2004Barnas et al. PRB 2005
)cos(1)sin()(θ
θθB
Ag+
=
>> λsf> λsf
Effect of Electrode Structure on Spin Torque
Net electron flow
0.050.1
0.150.2
0.250.3
gold cap
g
FeM
n
>> λsf> λsf
Effect of Electrode Structure on Spin Torque
Net electron flow
0.050.1
0.150.2
0.250.3
gold cap
Fe-Mn cap
g
Pulsed Current ExperimentsPt Capped Devices
1 2 3 4 50.0
0.2
0.4
0.6
0.8
1.0
1 ns pulse data 3 ns pulse data 10 ns pulse data 100 ns pulse datasimulations
Sw
itchi
ng P
roba
bilit
y
Pulse Amplitude (mA)
A = 0.18α = 0.037
Standard Configuration
1 2 3 4 5
1 ns pulse data 3 ns pulse data 10 ns pulse data 100 ns pulse datasimulations
Pulse Amplitude (mA)
A = 0.52α = 0.047
Inverted Configuration
AP-P switching
Spin pumping enhancement in inverted samples → Better spin sinking in extended Cu lead
LLG fit deviation from data at large currents – microwave oscillations
)cos(1)sin()(θ
θθB
Ag+
=Torque angular dependence
A – Torque amplitude – from spin current and spin accumulation
LLG simulations
γγ
+−
=11B
APPswitch
PAPswitch
II
→
→=,
,γ
e-
0.08-0.130.11-0.230.32-0.330.02-0.19B
0.0470.033-0.0370.033-0.0370.025-0.030α
0.45-0.520.18-0.210.12-0.160.25-0.30A
Pt inv.Pt capFe-Mncap Au cap
Pt normal Pt inverted
A=0.18B=0.23
A=0.52B=0.13
30nm hole
150x250nm pillar
Pt 30nm
Cu
Py 20nm
Cu 8nm
Py 5nm
Cu
Spin-Transfer-Switching by Spatially Non-Uniform Currents
Al2O3 3nmSiO2 SiO2
15-30nm aperture sizes
150nm
A 3nm Al2O3 insulating barrier with a nano-orifice is inserted into a Cu/Py spin-valve nanopillarGoal:
Result:
150x250 nm pillar
Hc~37.5Oe ∆R~253mΩ
150mΩ
J ~ 1.2x107 A/cm2AP-PIc- = 4 mA
P-APIc+ = 7.8 mA
100 x 200 nm2
uniform current
Jpillar ~ 4x105 A/cm2
Jhole~1.6x107 A/cm2
AP-PIc- = 50 µΑ
P-APIc+ = 180 µA
150 x 250 nm2
with 30 nm aperture
T=4.2K
R = 3 Ω
R = 12 Ω
•The nano-aperture device requires much less current to induce switching than a nanopillar with uniform current flow.•Current-induced switching may not result in full reversal of the nanomagnet
11.65
11.7
11.75
11.8
11.85
11.9
11.95
-0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5I(mA)
dV/d
I( Ω)
11.6511.7
11.7511.8
11.8511.9
11.9512
-600 -400 -200 0
H(Oe)
R( Ω
)
150mΩ
T=4.2K
Spin-Transfer-Switching by Spatially Non-Uniform Currents
-1 ´10 - 7
-5 ´10 - 8
05´10 - 8
1´10 - 7
-5 ´10 - 8
0
5´10 - 8
02´10 6
4´10 6
6´10 6
10 - 7
-5 ´10 - 8
05´10 - 8
´ - 7
3D OOMMF Simulations
The effect of spin torque was modeled using LLG equation with the Slonczweskiterm for each cell. The simulations were performed taking into account the Oersted field created by electron flow through a wire.
OOMMF is a public
software developed by M.J.Donahue
and D.G. Porter from
NIST
t=1.13ns t=1.6ns
t=2.3ns
t=3.3ns
t=2.06ns
t=2.5ns
t=3.96ns t=5.9ns
0.5 mA
Spin Transfer with Magnetic Tunnel Junctions
0.1 1 10 100 100010000
Bad TMR,
Pinholes
Good TMR, too high resistance to do spin transfer.
RA (Ω µm2)
Ok
for s
pin
tran
sfer
Pt 30 nm
Cu 5 nm
CoFeB 2 nmAlOx 7-8 Å
CoFeB 8 nm
Cu 80 nm
Ta 10 nm 147 nm
56 nm
147 nm
56 nm
Challenge: Tunnel barriers with high TMR that can withstand the currents necessary for switching, particularly for fast switching
Early Demonstrations with AlOx
Minor LoopH = 387 OeT= 77K
• There is a small TMR measured with DC resistance at switching currents.
• Wear-out of barriers a concern due to high critical currents/voltages
T = 77 K
Switching currents
Huai et. al., APL 84, 3118 (2004)
Fuchs et. al., APL 85, 1205 (2004)
20 Å CoFeB
80 Å CoFeB6.5 Å Al + Oxygen
CoFeB=Co88.2Fe9.8B2
Anti-aligned fixed layers
Aligned fixed layers
Spins from each fixed layer are in the same direction – more spin torque
Spins from each fixed layer are in opposite directions – almost no spin torque
5 nm CoFe
6 nm Cu
4 nm Py~0.8 nm AlOx8 nm CoFe
20 nm Ta
Increasing spin torque in MTJs with three magnetic layers
P
APAP/P
AP/P
APAP
PPT=77KAnti-aligned fixed layers Aligned fixed layers
Ic,o+ = 0.29±0.01 mAIc,o- = -0.28±0.01 mA
Jc,o/t = (2.9 ± 0.4) x106 A/(cm2-nm), reduced by 40% compared to a Py free layer with one fixed layer: 5x106 A/(cm2-nm)
(shape and size not optimized)
G. D. Fuchs et al., Appl. Phys. Lett. 86, 152509 (2005).
Ohmic heating reduces Hc,minimal spin torque
Strong spin torque
Spin Transfer Switching in 3-layer MTJs
Note the similarity of Ic’s
Questions regarding spin torque in MTJs
• Why does TMR decrease with increasing bias?
• How does bias affect spin-transfer torque?
• What is the nature of spin polarized transport in MgObased MTJs at finite bias?
Models that describe TMR(V) must also be consistent with spin torque, Nst/I(I) and I(V)
-0.3V 0 0.3V
How to measure torque vs. current
A thermally stable free layer can only provide a measure of the spin-torque at the switching bias
A thermally unstable free layer can provide a measure ofspin-torque continuously as a function of bias by applying H and I so as to have opposing effects
Sample structure
Lacour et al, APL 85, 4681, (2004)
• Bottom pinned SAF nearly cancels the dipole field and has a very large exchange field (~2 kOe)
• Devices are patterned with a 2:1 aspect ratio
• Have a range of thermal activation barriers
CoFe = Co86Fe14
Py = Ni91.5Fe8.5
CoFe 1 nm/Py 1.8 nmMgO 0.8 nmCoFe 1.9 nmRu 0.7 nmCoFe 2.2 nm
PtMn 15.4 nm
100 nm
Katine and Mauri - HGST
Experimental approach
⎥⎥
⎦
⎤
⎢⎢
⎣
⎡
⎟⎟⎠
⎞⎜⎜⎝
⎛⎟⎟⎠
⎞⎜⎜⎝
⎛ −±=
ococ
dip
B
aoAPP I
IIH
HHTk
EExp
,
2
,/
)(11 γττ mLifetime in thermal activation regime
γ(I)=Scaling factor to parameterize Nst/Ivariation with I - “Spin Transfer Efficiency”
E. B. Myers, et al, PRL 89, 196801 (2002).Z. Li and S. Zhang, PRB 68, 024404 (2003).I. N. Krivorotov, et al, PRL 93 166603 (2004).
Positions of equal mean lifetimes if the efficiency is constant with bias
Positions of equal mean lifetimes if efficiency decreases with increasing bias
Increasing Current (I)
Mag
netic
Fie
ld (H
)
0
H(I) data - Linear Response
TMR decreases by over 40%
Hd
H(I) data - Linear Response
TMR decreases by over 40%
Break in data – crystalline anisotropy effect
Spin Transfer Efficiency•Data are consistent with less than a 10% decrease in spin torqueefficiency out to the switching bias point (~ 0.3 V)
Tunnel Conductance Through MgO“s-like”
“pd-like”No s-like channels!
s-like decays in the electrode
No s-like channels!
W. H. Butler, X. –G. Zhang, T. C. Schulthess, PRB 63, 054416 (2001).J. Mathon and A. Umerski, PRB 63, 220403 (2001).
MgO DOS Data
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Fe / 2nm MgO[eb] Fe / 2nm MgO[rf] CoFeB / 2nm MgO[rf] 375C 1 hr
DO
S (A
.U.)
Negative Tip Bias (V)
Negative Tip Bias (V)
DO
S (A
.U.)
Fe / 20Å MgO[eb]Fe / 20Å MgO[rf]CoFeB / 20Å MgO[rf] 375oC 1hr
5.5 eV
2 eV
STM tunneling spectroscopy evidence for O vacancy defects in MgO barrier layers
Tunnel Conductance through MgO
Simmon’s model fit:
=1.35±0.05
=0.82±0.02 *pm
*apm
Magnetic state dependent effective mass (decay length):
Elastic scattering by barrier defects reduces the TMR
P
AP
γ(I)~const implies that:
• conductance for each spin channel varies with bias at a rate proportional to the zero bias DOS.
•electron scattering rate from defects is not strongly spin dependent!
W. H. Butler, X. –G. Zhang, T. C. Schulthess, PRB 63, 054416 (2001).J. Mathon and A. Umerski, PRB 63, 220403 (2001).
Symmetry of Critical Currents
])(1[2)()( 2 θ
θCosVP
VPg+
=
Polarization term
Asymmetry term is present to convert Slonczewski’s critical voltage (Vc) into a critical current (Jc).
A better approximation:
⎥⎦
⎤⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛+
+
==
θθ
CosVTMR
VTMRVPg
)(2)(12
)0()(
P2 calculated from TMR(V)
Polarization term is a constant function of V, consistent with our study
Diao et al., APL 87, 232502, (2005)
Conclusions – ST in MTJs
•Spin-transfer torque per unit current is independent of bias within 10% up to 0.35 V (good news for spin-torque driven MRAM)
•Measurement brings new information to help understand the relationship between bias and spin-polarized tunneling
•Results are inconsistent with:
Free-electron, split-band tunneling models
Magnon emission models that reduce polarization factors
•Results are consistent with calculations due to Butler et al and Mathonet al for transport through ultra-thin MgO tunnel barriers allowing for defects in non-ideal tunnel barriers.
Fuchs et al., cond-mat/0510786