- High speed,nanosecond timeconstants- High performance,room temp or TEcooled- PV, PC, PEM
Infrared Detectors Room Temperature and TE-Cooled
www.boselec.com [email protected] (617) 566 3821
91 Boylston Street, Brookline, MA 02445
1 Introduction ..........................................................................................
2 Infrared detectors .............................................................................2.1 Photoconductive detectors .................................................................2.2 Photovoltaic detectors .........................................................................2.3 Photovoltaic multijunction detectors ...................................................2.4 Photoelectromagnetic detectors .........................................................2.5 Quadrant geometry detectors ............................................................2.6 Detector packages ................................................................................2.7 IR Windows ..........................................................................................2.8 Detector code description ...................................................................
3 ........................................................................................
3.1 VIP ........................................................................................................3.2 IP ........................................................................................................3.3 QIP ....................................................................................................... 3.4 SIP ........................................................................................................ 3.5 FIP ........................................................................................................3.6 MIP ......................................................................................................3.7 PIP .......................................................................................................3.8 AIP .......................................................................................................
4 Accessories ............................................................................................4.1 PTCC-01 TEC controller .....................................................................4.24.3 DRB-2 base mounting system ..............................................................4.4 DH-2 detectors holder .........................................................................4.5 MH-1 modules holder ..........................................................................4.6 MHS-2 heatsink ...................................................................................4.7 EL-2 and EL-3 accessory lenses ............................................................4.8 Cables ..................................................................................................
5 Technical Information .....................................................................5.15.2 Detector parameters ...........................................................................5.35.45.5 Thermoelectric cooler controllers .......................................................5.6 Thermoelectric cooling ........................................................................5.7 Optical immersion ...............................................................................
6 Others .......................................................................................................6.16.2 Warranty ...............................................................................................
Table of contents
Boston Electronics www.boselec.com [email protected] (617)-566-3821
I am very pleased to introduce the new VIGO System product catalog for infrared (IR) detectors and dedicated electronics.
VIGO System has been providing infrared detectors to the market for many years; they have been developed and manufacturedby our highly specialized team of scientists, engineers, and technicians. VIGO IR detectors are used in various applications where reliability and the highest technical performance are required. Our products have unique performance and operating parametersthanks to our innovative approach, close coordination of research, development and production, and cooperation with renowned research centers around the world.
The last year was unique for VIGO System as we celebrated our 30th anniversary. We continue to grow, and develop new technologiesand new modern facilities. Our VIGO 2020 strategy is underway and will result in increased in production capacity and further improvement in our products’ affordability, performance and reliability.
When creating this catalog, we were driven to provide you with a clear presentation of the parameters of the products that are most important to you. The wide range of IR detector solutions manufactured at VIGO System have been presented to allow easy comparison and selection for your application.
partners worldwide, for skilled application support and product selection.
Regards,
President of VIGO System S.A.
Introduction
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectorsHgCdTe, photoconductive, photoelectromagnetic and photovoltaic detectors
temperature range without cryocooling. The detectors are characterized by
We are able to adapt to your needs and also create unique one- and
2
Infrared detectors
Photoconductive detectors PCPC series -
D
etec
tor
type
Coo
ling,
ope
ratin
g te
mpe
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re
TK
Opt
imal
wav
elen
gt h
opt
m
Detectivity
cm HzDW
Cur
rent
res
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ivity
le
ngth
pro
duct
@op
t
iA
mm
RL
W
Tim
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cfkH
z
Bias
vol
tage
leng
th r
atio
bVV
Lm
m
Shee
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istan
ce
sqR
Acce
ptan
ce a
ngle
Opt
ical
are
a
Pack
age
Win
dow
@ peak, 20kHz
@ opt, 20kHz
PC
uncooled,
4 3.2×10 2.0×10 0.1 12000
20
6.0 2000
0.025×0.0250.05×0.05
0.1×0.10.2×0.2
0.25×0.250.5×0.5
1×12×23×34×4
BNC, no window
5 1.5×10 1.0×10 0.07 5000 6.0 1200
6 7.0×108 3.0×108 0.02 500 6.0 600
1.0×108 2.0×107 0.003 10 6.0 300
10.6 7 6 0.001 3 6.0 120
two-stage TE-cooled
4 3.2×1010 2.0×1010 0.65 30000 4.5 1500
TO8, TO66
wedged Al2O35 2.0×1010 1.0×1010 0.5 20000 4.5 1200
6 6.0×10 3.0×10 0.18 4000 4.5 800
wedged ZnSe
AR coated
8 4.5×108 0.025 40 3.8 400
10.6 4.0×108 1.4×108 0.01 10 3.8 300
12 1.0×108 4.5×107 0.005 3 2.5 200
13 4.0×107 2.3×107 0.002 2 2.5 150
three-stage
TE-cooled
1.5×10 1.0×10 0.075 60 3.0 400
wedged ZnSe
AR coated
10.6 4.5×108 2.5×108 0.02 20 2.25 300
12 1.8×108 7 0.01 5 2.25 300
13 1.2×108 6.0×107 0.007 4 2.25 300
TE-cooled
2.5×10 2.0×10 0.1 80 3.8 500
10.6 5.0×108 3.5×108 0.03 30 3.0 400
12 4.0×108 2.0×108 0.015 7 3.0 400
13 2.0×108 1.0×108 0.01 6 3.0 400
14 1.0×108 6.0×107 0.007 5 2.25 300
*) Other optimal wavelengths available upon request.**) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Other optical areas available upon request.****) Other windows available upon request.
1) Optical area available only for uncooled detectors
2.1 Photoconductive detectors
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Spectral characteristics*)
PC PC-2TE
1E+06
1E+07
1E+08
1E+09
1E+10
1 2 3 4 5 6 7 8 9 10 11 12 13
9 m
6 m5 m
4 m
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
1E+07
1E+08
1E+09
1E+10
1E+11
1 2 3 4 5 6 7 8 9 10 11 12 13
9 m
6 m
5 m4 m
[ m]
10.6 m
12 m
13 m
D* [
c1/
2-1
m·H
z·W
]
PC-3TE PC-4TE
1E+07
1E+08
1E+09
1E+10
1 2 3 4 5 6 7 8 9 10 11 12 13
9 m
[ m]
10.6 m
12 m
13 m
D* [
c1/
2-1
m·H
z·W
]
1E+07
1E+08
1E+09
1E+10
1 2 3 4 5 6 7 8 9 10 11 12 13 14
9 m
[ m]
10.6 m
12 m
13 m
D* [
c1/
2-1
m·H
z·W
]
14 m
Spectral characteristics of individual detectors may vary from those shown on the chart.
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Photoconductive detectors optically immersed PCIPCI series -
opt -De
tect
or ty
pe
tem
pera
ture
T
K
*)
opt
m
**)
cm HzDW
opt
iA
mm
RL
W
Tim
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nt
ns
1/f n
oise
cor
ner
freq
uenc
y cf
kHz
bV
VL
mm
Shee
t res
istan
ce
sqR
Acce
ptan
ce a
ngle
***)
Pack
age **
**)
peak, 20kHz
opt, 20kHz
PCI
uncooled, ~300
4 10 9
BNC, TO39
9 9
9 9
9
7
(2TE), ~230
4 10 10
Al2O310 10
10 10
ZnSe AR coated
9 9 9
9 9
12 9
13
stage
(3TE), ~210
9 10 9
ZnSe AR coated
9 9
12 9
13
(4TE),
9 10 10
ZnSe AR coated
9 9
12 9 9
13 9 9
14
*) Other optimal wavelengths available upon request.**) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Other optical areas available upon request.****) Other windows available upon request.
. 1) Optical area available only for uncooled detectors
2.1 Photoconductive detectors
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Spectral characteristics*)
PCI PCI-2TE
1E+07
1E+08
1E+09
1E+10
1 2 3 4 5 6 7 8 9 10 11 12 13
9 m
6 m
5 m
4 m
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
1E+07
1E+08
1E+09
1E+10
1E+11
1 2 3 4 5 6 7 8 9 10 11 12 13
9 m
6 m
5 m4 m
[ m]
10.6 m12 m
13 m
D* [
c1/
2-1
m·H
z·W
]
PCI-3TE PCI-4TE
1E+08
1E+09
1E+10
1 2 3 4 5 6 7 8 9 10 11 12 13
9 m
[ m]
10.6 m
12 m
13 m
D* [
c1/
2-1
m·H
z·W
]
1E+08
1E+09
1E+10
1E+11
1 2 3 4 5 6 7 8 9 10 11 12 13 14
9 m
[ m]
10.6 m
12 m
13 m
D* [
c1/
2-1
m·H
z·W
]
14 m
*)
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Photovoltaic detectors PVPV series
opt
-ce processing.
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g
tem
pera
ture
T
K
Opt
imal
wav
elen
gth
opt
m
Detectivity
cm HzDW
Cur
rent
res
pons
ivity
@op
t
iA
RW
Tim
e co
nsta
nt
ns
Resis
tanc
e op
tical
are
a pr
oduc
t
RA
Acce
ptan
ce a
ngle
Opt
ical
are
a
Pack
age
Win
dow
@ peak @ opt
PV
uncooled,
3 8.0×10 6.5×10 0.5 350 1
0.710.05×0.05
0.1×0.1 no window
3.4 7.0×10 5.0×10 0.8 260 0.5
4 5.0×10 3.0×10 1 150 0.1
5 2.0×10 1.0×10 1 120 0.01
6 1.0×10 5.0×108 1 80 0.002
two-stage TE-cooled
3 1.0×1011 7.0×1010 0.5 280 150
0.87
0.05×0.05 0.1×0.1
TO8, TO66
wedged Al2O3
3.4 6.0×1010 4.0×1010 0.8 200 3
4 4.0×1010 3.0×1010 1.0 100 2
5 1.5×1010 1.3 80 0.1
6 5.0×10 2.0×10 1.5 50 0.02
wedged ZnSe AR coated
8 4.0×108 2.0×108 0.830
0.00020.025×0.025
0.05×0.05
45 0.1×0.1
10.6 2.0×108 1.0×108 0.4 10 0.0001 0.025×0.0250.05×0.05
three-stage TE-cooled
3 3.0×1011 1.0×1011 0.5 280 240
0.05×0.05
0.1×0.1
wedged Al2O3
3.4 10 7.0×1010 0.8 200 15
4 6.0×1010 4.0×1010 1.0 100 6
5 4.0×1010 1.0×1010 1.3 80 0.3
6 7.0×10 4.0×10 1.5 50 0.025
wedged ZnSe AR coated
8 5.0×108 3.0×108 1.030
0.00040.025×0.025
0.05×0.05
45 0.1×0.1
10.6 3.0×108 1.5×108 0.7 10 0.0002 0.025×0.0250.05×0.05
TE-cooled
3 3.0×1011 1.5×1011 0.5 280 3000.05×0.05
0.1×0.1
wedged Al2O3
3.4 2.0×1011 1.0×1011 0.8 200 20
4 1.0×1011 6.0×1010 1.0 100 8
5 4.0×1010 1.5×1010 1.3 80 0.4
6 5.0×10 1.5 50 0.03 0.05×0.050.1×0.1
wedged ZnSe AR coated
8 5.0×108 4.0×108 1.530
0.0006
0.025×0.025
0.05×0.05
45 0.1×0.1
10.6 4.0×108 2.0×1080.7 10
0.0005
0.025×0.025
0.05×0.05
0.5 25 0.1×0.1
*) Other optimal wavelengths available upon request.**) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Other optical areas available upon request.****) Other windows available upon request.
1) Optical area available only for uncooled detectors
2.2. Photovoltaic detectors
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Spectral characteristics*)
PV PV-2TE
1E+08
1E+09
1E+10
2 3 4 5 6 7
6 m
5 m
4 m
3.4 m3 m
D* [
c1/
2-1
m·H
z·W
]
[ m]1E+07
1E+08
1E+09
1E+10
1E+11
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
8 m
6 m
5 m
4 m3.4 m
3 m
PV-3TE PV-4TE
1E+07
1E+08
1E+09
1E+10
1E+11
1E+12
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m8 m
6 m
5 m4 m
3.4 m
3 m
1E+07
1E+08
1E+09
1E+10
1E+11
1E+12
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m8 m
6 m
5 m
4 m3.4 m
3 m
*)
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Photovoltaic detectors optically immersed PVIPVI series
opt -
-
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g te
mpe
ratu
re
TK
Opt
imal
wav
elen
gth
opt
m
Detectivity
cm HzDW
iA
RW
Tim
e co
nsta
nt
ns
Resis
tanc
e op
tical
are
a pr
oduc
t R
A
Acce
ptan
ce a
ngle
Opt
ical
are
a
Pack
age
Win
dow
@ peak
PVI
uncooled,
3 5.0×1010 5.0×1010 0.5 350 100
0.5×0.5 1×1
BNC,
no w
indo
w3.4 5.0×1010 4.5×1010 0.8 260 50
4 3.0×1010 2.0×1010 1 150 6
5 1.5×1010 1 120 1
6 8.0×10 4.0×10 1 80 0.2
two-stage TE-cooled
3 8.0×1011 5.5×1011 0.5 280 15000
0.5×0.5 1×1
TO8, TO66
wedged Al2O3
3.4 6.0×1011 3.0×1011 0.8 200 300
4 3.0×1011 2.0×1011 1.0 100 200
5 1.0×1011 6.0×1010 1.3 80 10
6 5.0×1010 2.0×1010 1.5 50 2wedged
ZnSe
AR coated
8 4.0×10 2.0×10 0.830
0.020.3×0.3 0.5×0.5
45 1×1
10.6 2.0×10 1.0×10 0.4 10 0.01 0.3×0.3 0.5×0.5
three-stage TE-cooled
3 11 7.0×1011 0.5 280 24000
0.5×0.5 1×1
wedged Al2O3
3.4 7.0×1011 5.0×1011 0.8 200 1500
4 5.0×1011 3.0×1011 1.0 100 600
5 1.0×1011 8.0×1010 1.3 80 30
6 6.0×1010 3.0×1010 1.5 50 2.5wedged
ZnSe
AR coated
8 5.0×10 3.0×10 1.030
0.040.3×0.3 0.5×0.5
45 1×1
10.6 3.0×10 1.5×10 0.7 10 0.02 0.3×0.3 0.5×0.5
TE-cooled
3 1.0×1012 8.0×1011 0.5 280 30000
0.5×0.5 1×1
wedged Al2O3
3.4 8.0×1011 7.0×1011 0.8 200 2000
4 6.0×1011 4.0×1011 1.0 100 800
5 3.0×1011 1.0×1011 1.3 80 40
6 6.0×1010 4.0×1010 1.5 50 3
wedged ZnSe
AR coated
8 5.0×10 4.0×10 1.530
0.060.3×0.3 0.5×0.5
45 1×1
10.6 4.0×10 2.0×100.7 10
0.050.3×0.3 0.5×0.5
0.5 25 1×1
*) Other optimal wavelengths available upon request.**) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Other optical areas available upon request.****) Other windows available upon request.
1) Optical area available only for uncooled detectors
2.2. Photovoltaic detectors
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Spectral characteristics*)
PVI PVI-2TE
1E+08
1E+09
1E+10
1E+11
2 3 4 5 6 7
6 m
5 m
4 m
3.4 m3 m
D* [
c1/
2-1
m·H
z·W
]
[ m]1E+08
1E+09
1E+10
1E+11
1E+12
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
8 m
6 m
5 m
4 m3.4 m
3 m
PVI-3TE PVI-4TE
1E+08
1E+09
1E+10
1E+11
1E+12
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m8 m
6 m5 m
4 m3.4 m
3 m
1E+08
1E+09
1E+10
1E+11
1E+12
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m8 m
6 m
5 m4 m
3.4 m3 m
*)
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
Photovoltaic multiple junction detectors PVMPVM series
Dete
ctor
type
tem
pera
ture
T
K
*)
opt
m
**)
cm HzDW
leng
th p
rodu
ct
iA
mm
RL
W
Tim
e co
nsta
nt
ns
Resis
tanc
e
R
Acce
ptan
ce a
ngle
***)
Pack
age **
**)
peak opt
PVM
uncooled, ~300
7
1)
BNC, TO397 7
(2TE), ~230
AR coated
*) Other optimal wavelengths available upon request. **) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
***) Other optical area available upon request. ****) Other windows available upon request.
1) Optical area available only for uncooled detectors.
2.3. Photovoltaic multiple junction detectors
PVMI series
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g te
mpe
ratu
re
TK
Opt
imal
w
avel
engt
h*)
opt
m
Detectivity**) cm HzD
W
Cur
rent
res
pons
ivi-
ty le
ngth
pro
duct
iA
mm
RL
W
Tim
e co
nsta
nt
ns
Resis
tanc
e R
Acce
ptan
ce a
ngle
Opt
ical
are
a***)
Pack
age
Win
dow
****
)
@ peak @ opt
PVMI
uncooled, 8 6.0×108 3.0×108 0.04 4 50 to 300
1.62
1×1 2×2
BNC, no window10.6 2.0×108 1.0×108 0.01 1.5 20 to 150
two-stage TE-cooled
8 2.5×10 2.0×10 0.10 4 150 to 1000
TO8, TO66wedged
ZnSe AR coated
10.6 1.5×10 1.0×10 0.05 3
three-stage TE-cooled
8 4.0×10 3.0×10 0.15 4 200 to 1500
10.6 2.0×10 1.5×10 0.10 3 100 to 400
TE-cooled
8 8.0×10 6.0×10 0.20 4 500 to 2000
10.6 2.5×10 2.0×10 0.15 3 120 to 500
*) **)
***) ****)
Photovoltaic detectors optically immersed PVMI
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors
PVM PVM-2TE
1E+07
1E+08
1E+09
2 3 4 5 6 7 8 9 10 11
8 m
[ m]
10.6 m
D* [c
1/2
-1m
·Hz
·W]
1E+07
1E+08
1E+09
2 3 4 5 6 7 8 9 10 11
8 m
[ m]
10.6 mD* [c
1/2
-1m
·Hz
·W]
PVMI PVMI-2TE
1E+08
1E+09
2 3 4 5 6 7 8 9 10 11
D* [
c1/
2-1
m·H
z·W
]
[ m]
8 m
10.6 m
0E+00
1E+09
2E+09
3E+09
1 2 3 4 5 6 7 8 9 10 11 12 13
[ m]
D* [
c1/
2-1
m·H
z·W
]
8 m
10.6 m
PVMI-3TE PVMI-4TE
0E+00
1E+09
2E+09
3E+09
4E+09
1 2 3 4 5 6 7 8 9 10 11 12 13
[ m]
D* [
c1/
2-1
m·H
z·W
] 8 m
10.6 m
0E+00
1E+09
2E+09
3E+09
4E+09
5E+09
6E+09
7E+09
8E+09
1 2 3 4 5 6 7 8 9 10 11 12 13
[ m]
D* [
c1/
2-1
m·H
z·W
] 8 m
10.6 m
*)
Spectral characteristics*)
Boston Electronics www.boselec.com [email protected] (617)-566-3821
2
Infrared detectors2.4. Photoelectromagnetic detectors
Photoelectromagnetic detectors PEM PEM series
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g
tem
pera
ture
T
K
Opt
imal
wav
elen
gth*)
opt
m
Detectivity**) cm HzD
W
iA
mm
RL
W
Tim
e co
nsta
nt
ns
Resis
tanc
e R
Acce
ptan
ce a
ngle
Opt
ical
are
a***)
Pack
age
Win
dow
****
)
PEM uncooled, 10.6 1.6×107 1.0×107 0.002 1.2 40 to 100 1×1 2×2
PEM-SMA,
PEM-TO8
wedged ZnSe
AR coated
*) **)
***) ****)
Photoelectromangetic detectors optically immersed PEMIPEMI series -
-
to 11 m spectral range.
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g
tem
pera
ture
T
K
Opt
imal
wav
elen
gth*)
opt
m
Detectivity**) cm HzD
W
Cur
rent
res
pons
ivity
le
ngth
pro
duct
iA
mm
RL
W
Tim
e co
nsta
nt
ns
Resis
tanc
e R
Acce
ptan
ce a
ngle
Opt
ical
are
a
Pack
age
Win
dow
****
)
@ peak @ opt
PEMI uncooled, 10.6 1.6×108 1.0×108 0.01 1.2 40 to 100 1×1 2×2
PEM-SMA,
PEM-TO8
wedged ZnSe
AR coated
*) **)
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2
Infrared detectors
PEM
1E+06
1E+07
1E+08
2 3 4 5 6 7 8 9 10 11
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
PEMI
1E+06
1E+07
1E+08
1E+09
2 3 4 5 6 7 8 9 10 11
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
*)
Spectral characteristics*)
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2
Infrared detectors2.5. Quadrant geometry detectors
Quadrant geometry detectors PCQ, PVMQ, PVQPCQ series
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g
tem
pera
ture
T
K
Opt
imal
wav
elen
gth
opt
m
Detectivity cm HzD
W
Cur
rent
res
pons
ivity
leng
th
prod
uct @
opt
iA
mm
RL
W
Tim
e co
nsta
nt
ns
cf
kHz
Bias
vol
tage
leng
th r
atio
bV
VL
mm
Shee
t res
istan
ce
Acce
ptan
ce a
ngle
Dist
ance
bet
wee
n el
emen
ts
Pack
age
Win
dow
@pe
ak, 2
0kH
z
@op
t, 20
kHz
PCQ uncooled, 10.6
7 6
0.001 5 20 6.0 240
0.05×0.05 0.1×0.1 0.2×0.2
0.25×0.25 0.5×0.5
1×1 2×2 3×3 4×4
4
20 TO8
no w
indo
w
*) **)
PVMQ series
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g te
mpe
ratu
re
TK
Opt
imal
wav
elen
gth
opt
m
Detectivity cm HzD
W
Cur
rent
res
pons
ivity
leng
th
prod
uct @
opt
iA
mm
RL
W
Tim
e co
nsta
nt
ns
Resis
tanc
e R
Acce
ptan
ce a
ngle
el
emen
t ***)
Dist
ance
bet
wee
n el
emen
ts
m
Pack
age
Win
dow
@pe
ak
@op
t
PVM
Q uncooled, 10.6
2.0×
107
1.0×
107
0.002 1.5 20 to 150
1×1 2×2 200 TO8
no w
indo
w
*) **)
PVQ series beam positioning.
Det
ecto
r ty
pe
Coo
ling,
ope
ratin
g te
mpe
ratu
re
TK
Opt
imal
wav
elen
gth*)
opt
m
Detectivity**) cm HzD
W
Cur
rent
res
pons
ivity
@op
t
iA
RW
Tim
e co
nsta
nt
ns
Resis
tanc
e op
tical
are
a pr
oduc
t R
A
Acce
ptan
ce a
ngle
el
emen
t ***)
Dist
ance
bet
wee
n el
emen
ts
m
Pack
age
Win
dow
@pe
ak
@op
t
PVQ uncooled, 5
2.0×
10
1.0×
10
1 120 0.01 0.1×0.1 0.2×0.2
4 30 TO8
no w
indo
w
*) Other optimal wavelengths available upon request. **) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.
m
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2
Infrared detectors
PCQ
1E+06
1E+07
1E+08
1 2 3 4 5 6 7 8 9 10 11 12 13
D* [
c1/
2-1
m·H
z·W
]
[ m]
10.6 m
PVMQ
1E+07
1E+08
2 3 4 5 6 7 8 9 10 11
[ m]
10.6 m
D* [
c1/
2-1
m·H
z·W
]
PVQ
1E+08
1E+09
1E+10
2 3 4 5 6
5 mD* [
c1/
2-1
m·H
z·W
]
[ m]
*)
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Infrared detectors2.6. Detector packages
Dimensions [mm]
Lens shape Hyperhemisphere Hemisphere Flat
[mm x mm]
R [mm]
A [mm] 0 0
B [mm]
FOV [°], =4mm ~90 ~90
BNC detector package
Top view
Dimensions [mm]
Lens shape Hyperhemisphere Hemisphere Flat
[mm x mm]
R [mm]
A [mm]
B [mm]
FOV [°], =4mm ~102
FOV [°], =4mm ~124
TO39 detector package
Bottom view
Pin number Function
signal
3 chassis ground
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2
Infrared detectors
PEM detector package (with SMA connector)
Top view
Dimensions [mm]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.6
A [mm] 8.4±0.2 10.7±0.2
FOV [°], =4mm
PEM detector package (with TO8 base)
Bottom view
Pin number Function
1, 3 signal
11 chassis ground
2, 4, 5, 6, 7, 8, not used
Dimensions [mm]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5-1.25
A [mm] 5.65±0.3 4.75±0.3 3.35±0.3 7.15±0.3 7.15±0.3
FOV [°]
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Infrared detectors
-kages are hermetically sealed with IR windows.
TO8 detector package
Bottom view
Pin number Function
1, 3 signal
thermistor
TE cooler supply
11 chassis ground
4, 5, 6, 10, 12, not used
Dimensions [mm]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.25
A [mm] 4.1±0.3 3.2±0.3 1.85±0.3 5.6±0.3 5.6±0.3
B [mm] 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0 .3 5.6±0.3
C [mm] 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3
FOV [°]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.6
A [mm] 5.7±0.35 4.8±0.35 3.45±0.35 7.2±0.35 7.2±0.35
B [mm] 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35
C [mm] 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3
FOV [°]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area[mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.6
A [mm] 7.3±0.4 6.4±0.4 5.0±0.4 8.8±0.4 8.8±0.4
B [mm] 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4
C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3
FOV [°]
2.6. Detector packages
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2
Infrared detectors
TO66 detector package
Bottom view
Pin number Function
7, 8 signal
5, 6 thermistor
TE cooler supply
11 chassis ground
2, 3, 4 not used
Dimensions [mm]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.6
A [mm] 5.1±0.3 4.2±0.3 6.6±0.3 6.6±0.3
B [mm] 6.6±0.3 6.6±0.3 6.6±0.3 6.6±0.3 6.6±0.3
C [mm] 12.1±0.3 12.1±0.3 12.1±0.3 12.1±0.3 12.1±0.3
FOV [°]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.6
A [mm] 7.2±0.35 6.3±0.35 5±0.35 8.7±0.35 8.7±0.35
B [mm] 8.7±0.35 8.7±0.35 8.7±0.35 8.7±0.35 8.7±0.35
C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3
FOV [°]
Lens shape Hyperhemisphere Hemisphere Flat
Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4
R [mm] 0.5 0.8 1.25 0.5 - 1.6
A [mm] 8.3±0.4 7.4±0.4 6.1±0.4
B [mm]
C [mm] 15.2±0.3 15.2±0.3 15.2±0.3 15.2±0.3 15.2±0.3
FOV [°]
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Infrared detectors2.6. Detector packages
IR windows
3° wedged Al2O3
Available windows options
Material Hardness AR coating Symbol
BaF2 82 wedged no wBaF2
Si silicon 1100
wedged yes wSiAR
planar yes pSiAR
ZnSe zinc selenide 120
wedged yes wZnSeARplanar yes pZnSeAR
Al2O3 sapphire 1370
wedgedyes wAl2O3ARno wAl2O3
planaryes pAl2O3ARno pAl2O3
Ge germanium 780
wedged yes wGeARplanar yes pGeAR
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Infrared detectors
Detector code
Detector package Window FOVCooling Optimal wavelength Optical area
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3
3
typeMain
featureDetector package
Detector type
Detector cooling
Radiator, cooling,
TEC controlling
Input noise
density
Input noise current density frequency
VIP standalone BNC PV, PVI, PVM, PVMI uncooled not
needed1) 1) DC, 10, 100, 1k, 10k
IP TO39
PC, PCI,
PV, PVI, PVM, PVMI
uncooled not needed
1) 1) DC, 10, 100, 1k, 10k
QIP PCQ, PVQ, PVMQ uncooled
on board radiator and TEC control
ler, fan
1) 1) DC, 10, 100, 1k, 10k
SIP OEM
TO39 PC, PCI,
PV, PVI, PVM, PVMI
uncooled
2TE, 3TE, 4TE
external heatsink needed
1) 1) DC, 10, 100, 1k, 10k
FIP
PC, PCI,
PV, PVI, PVM, PVMI
2TE, 3TE, 4TE on board radiator, fan 1k, 10k
MIP standard
PC, PCI,
PV, PVI, PVM, PVMI
2TE, 3TE, 4TE on board radiator, fan
1) 1) DC, 10, 100, 1k, 10k
PIP programmable
PC, PCI,
PV, PVI, PVM, PVMI
2TE, 3TE, 4TE on board radiator, fan
DC/10
AIP on board TEC controller
PC, PCI,
PV, PVI, PVM, PVMI
2TE, 3TE, 4TE
on board radiator and TEC control-
ler, fan
1) 1) DC, 10, 100, 1k, 10k
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frequency Transimpedance Output
impedance
Output Output supply supply
current Supply connector Signal output
10M, 20M5)
6)9)
12)
13)DB9 BNC
10M, 100M, 200M5)
6)9) MMCX
10M, 100M5)
6)9) 4×MCX
tunable4) up to 5)
6)9)
12)
13)MMCX
1G 3 +100 LEMOSMA ( DC
monitor as an )
5)
7)
8)
9)
12)
13)LEMO SMA
digitally adjustable
2)
3)
9
(DC) LEMO SMA
5)
6)9)
10)
+1211)
DC monitor as an
)
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3
non-biased IR detectors in BNC packages.
Code description
VIP - DC - 100k - S VIGO preamplifier type
Low cut-off frequency flo [Hz]:DC101001k10k
High cut-off frequency f [Hz]:100k300k1M5M10M20M
hi
Version:S - standard - with DB9 supply connector
Dimensions [mm]
Pin number Symbol Function
1 N.C. not connected
2 N.C. not connected
3 GND power ground
4 N.C. not connected
5 N.C. not connected
6 sup
7 N.C. not connected
8 N.C. not connected
sup
DB9 connector male
3.1 VIP
see the preamplifier specification table for additional information
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3
-
Code description
Low cut-off frequency f [Hz]:DC101001k10k
lo
High cut-off frequency f [Hz]:100k300k1M5M10M20M50M100M200M
hi
Version:S - standard - with packageOEM - without package
10kIPVIGO preamplifier type
200M OEM
Dimensions [mm]
IP OEM IP-S
Pin number Symbol Function
1 -Vsup
2 GND power ground
3 sup
3.2. IP
see the preamplifier specification table for additional information
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3.3. QIP
-ased, uncooled, quadrant geometry detectors in TO8 package. QIP provides broad bandwidth up to 100MHz.
Code description
QIP - 10k - 100Mtype
Low cut-off frequency f [Hz]:DC101001k10k
lo High cut-off frequency f [Hz]:100k300k1M5M10M100M
hi
Dimensions [mm]
Power supply connector - DC Jack connector
Type Voltage [V] Pin diamater
Ø 2.5
5 Ø 2.1
see the preamplifier specification table for additional information
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3
3.4. SIP
--
Code description
High cut-off frequency f [Hz]:100k300k1M5M10M100M250M
hiVIGO preamplifier type
Low cut-off frequency f [Hz]:DC101001k10k
lo
Package:TO8 - with cooled detectors in TO8 packageTO39 - with uncooled detectors in TO39 package
Gain adjustment:*)G - with gain adjustment
NG - without gain adjustment
Dimensions [mm]
SIP-TO8
Power supply and TEC control connector - AMP2x4 connector male
Pin number Symbol Function
1 sup
2*)
3**)
4*)
5 GND power ground
6
7 sup
8 -ted
*) lo hi
**) lo hi
see the preamplifier specification table for additional information
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3
3.5. FIP
Code description
FIP - 1k - 1G - F - M4 - DVIGO preamplifier type
Low cut-off frequency f [Hz]:1k10k
lo
High cut-off frequency fhi [Hz]:1G
Package:F - with fan
Mounting hole:M4 - M4 mounting holeM8 - M8x1 mounting hole
DC monitor:D - with DC monitorND - without DC monitor
Dimensions [mm]
Pin number Symbol Function
1
2 TH2
3
4 Vsup power supply input (–)5 GND power ground
6 sup
7
8 TH1
DATA data pin
see the preamplifier specification table for additional information
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3
intended to operation with either biased or non-biased detectors.
-
Code description
VIGOpreamplifiertypeMIP
Lowcut-of f frequencyf [Hz]:lo
DC101001k10k
ffrequencyfHighcut-of [Hz]:hi
100k300k1M10M20M50M100M250M
Package:F - withfan
Mountinghole:M4 - M4 mounting holeM8 - M8x1 mounting hole
MIP - 1k - 100M - F - M4
Dimensions [mm]
Pin number Symbol Function
1
2 TH2
3
4 Vsup power supply input (–)5 GND power ground
6 sup
7
8 TH1
DATA data pin
3.6. MIP
see the preamplifier specification table for additional information
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3
the power is on.
For proper operation PTCC-01 TEC controller is required.Code description
PIP - DC - 200M - F - M4VIGO preamplifier type
Low cut-off frequency fDC/10 - configurable by software
High cut-off frequency f [Hz]:20M200M
hi
Package:F - with fan
Mounting hole:M4 - M4 mounting holeM8 - M8x1 mounting hole
[Hz]:lo
Dimensions [mm]
Pin number Symbol Function
1 FAN+ FAN (+)
2 TH2 thermistor output (2)
3 TEC– TEC supply input (–)
4 Vsup power supply input (–)
5 GND power ground
6 +Vsup power supply input (+)
7 TEC+ TEC supply input (+)
8 TH1 thermistor output (1)
9 DATA data pin
3.7. PIP
see the preamplifier specification table for additional information
Selectable bandwidths: 150kHz, 1.5 MHz, 20MHz or 1.5MHz, 15 MHz, 200 MHz
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3
supply what makes AIP very convenient in use and decreases power consumption.
Code description
Dimensions [mm]
Power supply connector - DC Jack connector
Type Voltage [V] Pin diamater
Ø 2.5
5 Ø 2.1
3.7. AIP
see the preamplifier specification table for additional information
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44
AccessoriesProgrammable, precision and low noise thermoelectric cooler controllers, power supplies as well as mechanical and optical accessories provide an ideal complement for any type of VIGO detection module.
4
Accessories
PTCC-01 – Programmable “smart” TEC controller
PTCC-01 is the programmable, precision, low noise, thermoelectric cooler controller, intended to operate with VIGO IR
PTCC-01-OEM
TE C controller with built-in power supply, without housing
PTCC-01-BAS
TEC controller with built-in power supply, encapsulated in a small package
status LED indicator
PTCC-01-ADV
TEC controller with built-in power supply, encapsulated in a small package
4.1 PTCC-01 TEC controller
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4
Accessories
Parameter Value
Temperature stability [K] det det
Temperature readout stability [mK] det det
Detector temperature settling time [s]det det det det det det
Maximum TEC current [A]
Output voltage range [V] min 3, max 14.5
Output current of the built-in power supply [mA]
Power supply voltage Vsup [V]
Power supply current Isup [mA] 500 TEC=0.45A, UTEC
Series resistance of the connecting cable [m ]
1000
Storage temperature [°C]
Ambient temperature [°C]
Relative humidity [%]
Code description
PTCC-01-BASVIGO thermoelectric cooler controller Version:
OEM - without packageBAS - Basic - with packageADV - Advanced - with package, function buttons and LCD
Dimensions [mm]
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4
Accessories
Pin number Symbol Function
1
2
3 GND power ground
4 TH1
5 TH2
6 sup
7
FAN and programmable preamp
internal logic auxiliary supply
8 DATA bidirectional data port
sup
metal cover GND-SH shield
Pin number Symbol Function
1 TEC controller supply input
2 TECC GND
TEC controller power ground
Pin number Symbol Function
1
2
3 GND power ground
4 TH1
5 TH2
6 sup
7 FAN and PIP preamp internal logic auxiliary supply
8 DATA bidirectional data port
sup
10 GND-SH shield
Pin number Symbol Function
1 error indicator
2 LEDtemperature control loop lock
indicator
3 module power supply on indicator
4 3.3 V auxiliary supply
5
6 GND
7
4.1 PTCC-01 TEC controller
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4
Accessories
Parameter Vaule
Power supply voltage Vsup [V AC]
Output voltage [V DC]
Output current [mA] ±100
Weight [g] 100
Code description
PPS-03-1509 - ±9V15 - ±15V
Dimensions [mm]
Pin number Symbol Function
1 N.C. not connected
2 N.C. not connected
3 GND power ground
4 N.C. not connected
5 N.C. not connected
6 sup
7 N.C. not connected
8 N.C. not connected
sup
metal cover GND-SH shield
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Accessories
BNC packages.
Base plate BP
Mounting post MP-100
Post holder PH-100
Features
Stable construction
Adjustable height
Durable elements
Compatible with M6 optical breadboards
MP mounting post
MP-100 models are available.
Model Weight [g] Dimension A [mm]MP-50 55 50
MP-75 85 75
MP-100 115 100
4.3 DRB-2 base mounting system
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Accessories
PH post holder
PH-100 models are available.
Post holder PH
Model Weight [g] Dimension A [mm]PH-50 35 50
PH-75 50 75
PH-100 60 100
BP base plate
photo to be updated
STA-8x1-4 special thread adapter
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4
Accessories4.4. DH-2 detectors holder / 4.5. MH-1 modules holder / 4.6. MHS-2 heatsink
packages. It is compatible with DRB-2 mounting system.
mounting system.
-
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Accessories 4.7. EL-2 and EL-3 accessory lenses
EL accessory lens with mount
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4
Accessories
AC adaptor
Signal output cables
BNC-BNC
SMA-BNC SMA-SMA
Power supply and TEC control cables
4.8. Cables
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4
Accessories
Power supply cables
photo to be updated
photo to be updated
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5
Technical Information
5
Technical Information
Hg1-xCdxTe
ranges.
Photoconductors (PC)Photoconductive detectors based on the photoconductive
-conductor active region decreasing its resistance. The resistan-ce change is sensed as a current change by applying a constant
test report and depen ds on the detector size, operating tem-perature and spectral characteristics.
Photovoltaic detectors (PV, PVM)-
PV PVM -tions. Absorbed photons produce electron-hole pairs, resulting in external photo current. Reverse bias voltage may be applied
more vulnerable to electrostatic discharges than photoconduc-tors.
Photoelectromagnetic detectors (PEM)Photovoltaic detectors based on the photoelectromagnetic
Detector formats
5.2 Detector parameters
Current responsivity
PVM and PEM detectors.
Current responsivity length produc
detector L2 and proportional to voltage bias Vb the normalized responsivity can be expressed as the current responsivity length product divided by bias voltage length ratio
Dark current
receiving any light. It may increase as the temperature rises.
Maximum bias voltage
Bias voltage length ratio Length-normalized photoconductor bias current. Typical photoconductor’s bias current should be increased proportionally to the distance between the contacts .
.
Noise power
, where
and means averaging over time.
Noise power density
Noise current
,where means momentary current noiseand means averaging over time.
Noise current density
1/f noise corner frequency Flicker noise or 1
power is proportional to where . Below the corner
For
Normalized detectivity
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5
Technical Information
normalized to radiant power, a detector optical area and a bandwidth. The higher value = the better detector.
Optical area
Detector capacitance
Parallel to detector resistance, capacitance in the detector structure.
Spectral response
data sheets it is presented as or .. It canbe characterized by cuton wavelength ,wavelength , optimum wavelength and peakwavelength .
Cut-on wavelength , , is the shorter wavelength at which a detector
Cut-off wavelength is the longer wavelength at which a detector
Optimum wavelength
Peak wavelength
Resistance at 0 bias voltage optical area product
resistance decreases proportionally to their area increasing.
.
In contrast, the PC, PEM, PVM detectors are characterized by sheet resistance .
Series resistance Parasitic resistance in photodiodes. Its contribution to the
and near room operating temperatures diodes, especially with large optical area.
Sheet resistance The normalized resistance expressed in . It is used to
square active area.
Time constant Typically, detector time response can be described by one pole
:
Operating temperature T
Acceptance angle Acceptance angle is the maximum angle at which incoming
a larger cone angle will not reach the detector.
Field of view FOV
•or equipped with hemispherical lens detectors,
and
• the marginal ray in detectors with intermediate or
In systems without external objectives acceptance angle and FOV are identical.
F-number F/#
5.2. Detector parameters
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5
Technical Information
Output voltage responsivity
The output voltage divided by optical power incident on the detector.
Output voltage swing
works in linear range.
GND
power supply and signal ground.
Low cut-off frequency -
High cut-off frequency -
Output noise
Average output voltage noise density
Noise measurement frequency Frequency at which output voltage noise is measured selecti-vely.
frequency
Transimpedance -
the input current signal
Noise current generated by equivalent current source in paral-
Noise voltage generated by equivalent voltage source in series
Total input noise current Parameter taking into consideration all noise sources related to the input.
Output impedance Equivalent impedance exhibited by its output terminals.
Load resistance
output. For slower detection modules it is 1 MOhm. Faster
in this case is 50 Ohm. The parame--
red with intended .
Output voltage offset The residual voltage present at the output, when no optical signal is illuminating the detector. For the DC coupled pream-
-mental conditions.
Power supply voltage
±20% tolerance is allowed.
Power supply current -
ration.
Coupling type
-
coupled by a capacitor, which removes the constant com-
-
-
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5
Technical Information
-
Power supply input (+) and (-)
supply connectors may lead to module damage.
DC coupled, with narrow and wide bandwidths, standalone or integrated with detector in common packages. The
response.
the TI amp is the ability to maintain the detector at constant bias voltage, equal to voltage applied to the non-inverting input
schematically shown in Figure 1. The detector is modeled , shunt resistance and
capacitance . The photocurrent is proportional to the input optical power and detector current responsivity .
. Feedback capacitance is usedto set system bandwidth and eliminate gain peaking at high
The transimpedance gain can be approximated by one-pole
limited by the detector , transimpedance is equal
to . In consequence, the circuit converts linearly opticalinput power
with resulting voltage responsivity
capacitance.
Noise-
Where and are the opamp open input noise current andshort input noise voltage, respectively. is the detector im-
-
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5
Technical Information5.5 Termoelectric cooler controlers
performance?
detectors- having low resistance having large capacitance.
bandwidth, gain, detector resistance, capacitance and other
or discrete transistors. Bipolar opamps are characterized by large and low , in contrast to FET-based
is low and is large. n-bipolar op-amps suits well to low Zd
d
5.5 Thermoelectric cooler controllers
Temperature sensor inputs
polarity.
Thermoelectric cooler supply input (+) and (-)
means they are not connected to the GND.
Maximum thermoelectric cooler controller output current
Maximum current that is provided by the controller to the thermoelectric cooler.
Maximum thermoelectric cooler controller output voltage
Maximum voltage that is provided by the controller to the thermoelectric cooler.
Ripple of output current-
Output current of the built-in power supplyMaximum current that can be delivered by power supply to
.
Series resistance of the connecting cable
on cable length.
Settling time of the set detector temperatureThe time taken by the cooling system to reach appropriate
Maximum voltage across thermoelectric cooler element
5.6 Thermoelectric cooling
Detector cooling reduces noises, increases responsivity and,
sink temperature.
Maximum temperature difference
rated at , at other the should be esti-mated as .
Optimum current
Maximum TEC voltage Boston Electronics www.boselec.com [email protected] (617)-566-3821
5
Technical Information 5.6 Termoelectric cooling
TEC voltage drop at .
Maximum heat pumping capacity rated at , at other cooling capacity should
be estimated as . .
Standard TEC parameters
ParameterCooling
~230 ~210
92 114
Temperature sensor-
ration temperature. TE-cooled detectors are equipped with thermistor type NCP03XM222E05RL as a standard.
NCP03XM222E05RL thermistor characteristic
should be under the maximum power dissipation at not to
the power should not exceed .
at
Table. Resistance vs temperature for NCP03XM222E05RL termistor
180 -93 1594.97 1757.95 1935.84182 -91 1336.02 1469.90 1615.75184 -89 1124.16 1234.66 1354.81186 -87 950.46 1042.11 1141.58188 -85 807.57 883.99 966.78190 -83 689.57 753.62 82 2.88192 -81 591.68 645.64 703.89194 -79 510.07 555.75 604.98196 -77 441.68 480.54 522.34198 -75 384.05 417.25 452.91200 -73 335.23 363.71 394.26202 -71 293.65 318.17 344.43204 -69 258.05 279.23 301.88206 -67 227.41 245.76 265.36208 -65 200.91 216.85 233.85210 -63 177.89 191.77 206.55212 -61 157.81 169.92 182.79214 -59 140.22 150.80 162.03216 -57 124.76 134.02 143.83218 -55 111.14 119.25 127.83220 -53 99.10 106.21 113.72222 -51 88.44 94.67 101.25224 -49 78.98 84.44 90.21226 -47 70.57 75.37 80.42228 -45 63.09 67.30 71.73230 -43 56.42 60.12 64.01232 -41 50.49 53.74 57.15234 -39 45.19 48.05 51.04236 -37 40.47 42.98 45.61238 -35 36.26 38.47 40.77240 -33 32.51 34.45 36.47242 -31 29.16 30.87 32.64244 -29 26.18 27.68 29.24246 -27 23.51 24.84 26.21248 -25 21.14 22.30 23.51250 -23 19.02 20.05 21.11252 -21 17.13 18.04 18.98254 -19 15.45 16.25 17.07256 -17 13.95 14.65 15.38258 -15 12.61 13.23 13.87260 -13 11.41 11.96 12.53262 -11 10.34 10.83 11.33264 -9 9.38 9.82 10.26266 -7 8.52 8.91 9.31268 -5 7.75 8.10 8.45270 -3 7.07 7.37 7.69272 -1 6.45 6.72 7.00274 1 5.89 6.13 6.38276 3 5.38 5.60 5.83278 5 4.93 5.13 5.32280 7 4.52 4.69 4.87282 9 4.15 4.30 4.46284 11 3.81 3.95 4.09286 13 3.50 3.63 3.75288 15 3.22 3.33 3.45290 17 2.96 3.06 3.17292 19 2.73 2.82 2.91294 21 2.51 2.59 2.68296 23 2.32 2.39 2.46298 25 2.13 2.20 2.27
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5
Technical Information5.6 Termoelectric cooling
0
200
400
600
800
1000
1200
1400
1600
1800
2000
180190200210220230240250260270280290300
Rmin [k
Rnom [k
Rmax [k
Thermistorresistance[k
Heat sinkingSuitable heat sinking is necessary to dissipate heat generated by
Heat sinking via the mounting screw or via the detector ho-
be applied to improve thermal contact between detector ho-using and heat sink.
is typically recommen-
is recom-mended.
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5
Technical Information 5.7 Optical immersion
5.7 Optical immersion
D* by one order of magnitude and electric capacitance
Immersed detectors parameters
Parameter SymbolHemisphere Hyperhemisphere
Theory GaAs Theory GaAs
Distance L R R R(n+1)
Linear size n 3.3 n2 10.9
n 3.3 n2 10.9
Aceptance angle 180 180 35
lens
0.5 0.5 1.57
optical size. Detectors with custom acceptance angles are available upon request.
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6
Appendix
6
Others
Operating temperatureA detector should be operated at its optimal temperature given
Maximum voltageDo not operate the PV detector at higher bias voltages than
Be careful using ohmmeters for PV de-tectors!Standard ohmmeters may overbias and damage the detector.
-
plot mea-surements!
UsageDevices can operate in the 10% to 80% humidity, in the -20
am--
to ambient temperature range.
Storage
to temperature,
devices should be stored having leads shorted.
Handling-
-
damage. Peltier element inside thermoelectrically cooled detec-tors is susceptible to mechanical shocks. Great care should be taken when handling cooled detectors.
Cleaning window
Mechanical shocksThe Peltier element may be damaged by excessive mechanical shock or vibration. Care is recommended during manipulations
-ularly dangerous.
6.1 Precaution for use
Shaping leads
leads, maximum two right angle bends and three twists at the
Soldering leadsIR detectors can be easily damaged by excessive heat. Special
-
circuits should be applied to IR detectors too. Leads should be or below within 5s.
Beam power limitations
without immersion lens irradiated with
irradiance on the active area must not exceed . must not
exceed ,
optically immersed detectors irradiated with CW or single pulse longer than irradiance on the ap-parent optical active area must not exceed
exceed ,
,
upon request.
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6
Others 6.2 Warranty
VIGO System S.A
-
-
and
1.2.
3.
4.5.6.7.8.
-gns or instructions provided by the Customer.
-
RMA request instructions:
us number.
our
us return
will not be accepted.
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How to choose an IR Detector & Preamplifier
Choosing a Detector
There are four issues:
• The wavelength or wavelength region of interest • The required speed of response • Required sensitivity • Other characteristics (e.g., required power consumption, size, hardiness, price)
Wavelength or wavelength region of interest.
Our IR quantum detectors are usually sensitive enough to be useful only at wavelengths shorter than 13 microns or longer. Though some models retain useful sensitivity in visible and near infrared, we suggest they be used there only when such use allows the user to avoid adding complexity to the system by not adding a more suitable detector like silicon or germanium photodiode to a system already having ours for the longer wavelength.
Required speed of response.
If the system is to monitor rapidly changing input signals, like laser pulses, you need a fast detector. We offer nanosecond response to 11+ microns. If the system is to provide real-time control of a process, you probably only need microsecond or millisecond response. If the system just needs to turn off the room lights after the last person leaves the room, a quite slow response is probably fine. Our photovoltaic detectors typically provide excellent service for all frequencies from DC to tens or even hundreds of megahertz. Our photoconductive types (like all photoconductors), though fast, have excess noise at low frequencies (called 1/f or 'flicker' noise) and must normally be chopped at a suitable frequency and synchronously demodulated to achieve slow response.
Sensitivity
How much sensitivity do you need? The best objective expression of "sensitivity" is the signal-to-noise-ratio (S/N) that a photodetector and its following electronics produces at the point where the information is to be used. S/N>10 is often plenty and S/N>100 is normally more than enough to eliminate perceived noise when viewed as an oscilloscope trace by the human eye. Higher S/N is needed as the required precision of measurement increases. Sensitivity is often costly in both money, system complexity and logistics (such as LN2 cooling). D* (spoken "D-star") is a figure of merit for IR photodetectors that attempts to allow comparison between types. When it comes to D*, bigger is better.
For detailed info on how to predict the performance of a photodetector from knowledge of wavelength, frequency, D*, etc., and thus determine the S/N you can expect in your system, see our application note, "Predicting the Performance of a Photodetector".
Other detector characteristics
Characteristics that may influence your choice of a detector include power consumption, logistics like LN2 for cooling if required, size, robustness, and price.
Choosing a Preamplifier
1. Determine the detector you intend to purchase.
2. Determine the highest frequency you expect to see or the system chopping frequency.
3. Multiply the highest frequency or the chopping frequency by 10 if you want to resolve the waveform cleanly.
4. Consult our table of available preamps. Normally select a DC-coupled preamp for use with photovoltaic devices or an AC-coupled preamp for use with photoconductive devices, or consult us.
5. Consult us if you need customized bandwidth or special gain for your preamp. We routinely customize.
Page 1
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
by Fred Perry, Boston Electronics Corporation, 91 Boylston Street, Brookline, MA 02445 USA. Comments and corrections and questions are welcome.
The performance of a photodetector system can be predicted from the parameters D* (detectivity), Responsivity, time constant and saturation level, and from some knowledge about the noise in the system. No photodetector should be purchased until a prediction has been made. Detectivity and NEP The principal issue usually facing the system designer is whether the system will have sufficient sensitivity to detect the optical signal which is of interest. Detector manufacturers assist in making this determination by publishing the figure of merit “D*”. D* is defined as follows:
NEP
fAD
Δ*
×≡ (equation 1)
where A is the detector area in cm2 Δf is the signal bandwidth in hertz
and NEP is an acronym for “Noise Equivalent Power”, the optical input power to the detector that produces a signal-to-noise ratio of unity (S/N=1). D* is a “figure of merit” and is invaluable in comparing one device with another. The fact that S/N varies in proportion to A and f∆ is a fundamental property of infrared photodetectors.
Predicting the performance of a photodetector
Page 2
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
Active Area Consider a target about which we wish to measure some optical property. If the image of the target is larger than the photodetector, some energy from the target falls outside the area of the detector and is lost. By increasing the detector size we can intercept more energy. Assuming the energy density at the focal plane is constant in watts/cm2, doubling the linear dimension of the detector means that the energy intercepted increases by 422 = times. But NEP increases only as 24 = . Conversely, if the image of the target is small compared to the detector size, and if there are no pointing issues related to making the image of the target fall on the photodetector, then halving the linear dimension of the photodetector will similarly double S/N, since the input optical signal S stays constant while the NEP DECREASES by a factor of 24 = . The moral of this story is: Neither throw away photons nor detector area. Know your system well enough to decide on an optimized active area. Bandwidth Error theory tells us that signal increases in a linear fashion but noise (if it is random) adds ‘RMS’. That is, Signal increases in proportion to the time we observe the phenomenon, but Noise according to the square root of the observation time. This means that if we observe for a microsecond and achieve signal-to-noise of β, in an integration time of 100 microseconds we can expect S/N of ββ 10100 = . Bandwidth is related to integration time by the formula
πτ21
=∆f (equation 2)
where τ is the integration time or “time constant” of the system in seconds. Time constant τ is the time it takes for the detector (or the system) output to reach a
value of %6311 ≅
−
e of its final, steady state value.
Signal Signal in all quantum photodetectors is constant versus frequency at low frequencies but begins to decline as the frequency increases. The decline is a
Page 3
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
function of the time constant. If Slow is the signal at flow, a few hertz, the signal at arbitrary frequency f » flow is
2)2(1 πτ+
= lowf
SS (equation 3)
This is graphically illustrated below. Frequency fc is the point at which lowf SS2
1= .
Noise Noise is not as simple as signal. Photoconductive devices like PbS, PbSe, and most HgCdTe exhibit “flicker” or 1/f noise, which is excess noise at low frequencies. Consequently, Signal-to-Noise ratio and D* are degraded at these
Page 4
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
frequencies. 1/f noise actually varies as f1 in voltage terms. At high
frequencies, the detector noise actually decreases according to the same relationship as signal decreases. However, the difficulty in constructing following amplifier electronics that are significantly lower in noise than the photodetector results in system always having a noise at high frequencies that is no better than noise at low frequencies. The following set of graphs illustrates this.
To predict low frequency performance of a photoconductor, the extent to which D* is degraded by 1/f noise must be estimated. Either of the following ways is applicable: 1. use the manufacturer’s published graphical data of D* versus frequency to determine the multiplication factor Nexcess to use to convert minimum guaranteed D* at its measured frequency to D* at the frequency of interest. 2. use the 1/f “corner frequency”fcorner > flow reported by the manufacturer to estimate the degradation factor at flow as
excess noise factor low
cornerexcess f
fN = (equation 4)
In contrast to photoconductors, photovoltaic detectors normally have no 1/f noise. Signal is flat to or near DC and therefore D* is constant below the high frequency roll-off region, so no low frequency correction need be made.
Page 5
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
Spectral response correction The D* of a quantum detector varies with wavelength λ. The detector manufacturer typically guarantees D* at the wavelength of peak response, D*(peak). When using the device at another wavelength λ, the D* should be corrected by an appropriate factor:
)(
)(peakatresponse
atresponseR−−−−
=λ
λ
λλ RDD peak ×= ** (equation 5) where the relative response at wavelength λ is estimated by inspection of spectral response curves or other data supplied by the manufacturer. Therefore, the optical input power required to produce a signal-to-noise ration of 1:1 for a stated system response time and wavelength becomes: Case 1: Photoconductor at low frequency:
excessND
fANEP ×
∆×= *
λλ (equation 6)
Case 2: Photovoltaic detector at low to moderate frequency:
Page 6
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
*λ
λ DfA
NEP∆×
= (equation 7)
Case 3: Photoconductor or photovoltaic frequency at higher frequency:
*λ
λ DSfA
NEPf ×
∆×= (equation 8)
This yields an estimate of the input optical power to achieve a voltage output with S/N=1. Upper Limits Another important question is the dynamic range of the system, e.g. the ratio of the maximum signal available to the NEP of the system. The upper limit of the system is typically set by the electrical gain of the preamp or the vertical gain of the oscilloscope used to display the signal, combined with the maximum output signal of the preamp or the maximum vertical deflection of the oscilloscope. The dynamic range of the system is then expressed in multiples of the system NEP. Let the preamp gain be G. Let the responsivity of the detector in volts per watt (or volts per division in the case of an oscilloscope) at low frequency be Rlow and at frequency f let it be Rf where flowf SRR ×= (equation 10) The voltage signal from the detector into the preamp or oscilloscope when S/N=1 corresponding to this responsivity will be ff RNEPV ×= (equation 11) Then the output of the preamp at frequency f and S/N=1 will be GVV fpreamp ×= (equation 12)
Page 7
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
Let the maximum output of the system be Ψpreamp volts (or Ψvertical vertical divisions in the case of an oscilloscope). The multiple of the NEP that corresponds to the maximum output Ψpreamp will therefore be
Preamp Dynamic Range GV
Df
preamp
×
Ψ= (equation 13)
Of course, with an oscilloscope it is usually possible to turn down the gain and thus increase the dynamic range. However, preamps usually have fixed gain. In that case the input optical must be attenuated in order to keep the output from the preamp from saturating. Sometimes the photodetector itself will saturate before the preamp. Some process, thermal or photonic, intrinsic to the photodetector may limit it’s output. In this case, the maximum available (saturation) output signal should be specified by the device manufacturer, typically as a not-to-exceed output voltage Ψdetector.. Graphically the situation is illuatrated as follows:
Case 1: Dynamic Range limited by the preamp
f
ector
f
preamp
VGVD detΨ
<×
Ψ= (equation 14)
Case 2: Dynamic Range limited by the detector
GVV
Df
preamp
f
ector
×
Ψ<
Ψ= det (equation 15)
Page 8
Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com
This completes our prediction of system performance. We have calculated the input optical signal that corresponds to S/N=1, and the maximum output that can be extracted from the system in terms of a multiplier of the minimum input signal. The multiplier is “dynamic range”. System options As the designer, you have the following additional degrees of freedom in designing a system: 1. You may increase the size of his optics in order to deliver more optical energy to the photodetector. The key concept to remember is that throughput in any optical system, defined as Ω×= AT , where A is area in cm2 and Ω is solid angle field of view in steradians, is a constant in the system. If AD is detector area and ΩD is detector FOV, then collector area AC and collector FOV ΩC are at best satisfy
DDCC ATA Ω×==Ω× . Increasing the collector aperture decreases the FOV. 2. You may increase the efficiency of his optics (transmittance and reflectance optimization, etc). 3. You may increase the power of his source in a cooperative, active system (though not in a passive one). 4. You may increase the time he observes the signal, that is decrease the bandwidth and increase the time constant.
===========================================================
• Appendix: Sample Calculations See next page.
Responsivity
D*(10.6 um
)volts
10/9/2009 16:42PVM
-10.6200
1.5E+075
mV/W
cm.H
z1/2/w
attA
ssume detector saturation for C
W signal is
20m
VA
ssume detector saturation for single fast pulse is
600m
vA
ssume w
avelength is 10.6 microns
Assum
e active area is 1x1 mm
Assum
e resistance is 50 ohms
CW
casePulsed case
SystemTim
e3dB
SystemO
ptical signalElectrical signal
S/N at
S/N at
S/N at
Elements
Constant
FrequencyG
ain (voltage)R
esponsivityfor S/N
=1for S/N
=1D
etectorD
etectorPream
p(nsec)
(MH
z)(V/W
)(N
EP, microw
atts)(m
illivolts)Saturation
SaturationSaturation
PVM-10.6 unam
plified<1
1601
0.284
0.021186
35576no pream
pPVM
-10.6 with 493A
/40<1
500100
20149
2.98671
201251677
PVM-10.6 w
ith 493A<1
50010
2149
0.30671
2012516771
PVM-10.6 w
ith 481-200<1
20040
894
0.751061
318201326
PVM-10.6 w
ith 481-1001.5
10080
1667
1.071500
45000938
PVM-10.6 w
ith 481-503
50200
4047
1.892121
636402652
PVM-10.6 w
ith 481-208
20200
4030
1.193354
1006234193
PVM-10.6 w
ith 481-1015
10400
8021
1.694743
1423022965
PVM-10.6 w
ith 481-530
5960
19215
2.866708
2012461747
PVM-10.6 w
ith 481-1150
14000
8006.7
5.3315000
450000938
PVM-10.6 w
ith 481-0.11500
0.14000
8002.1
1.6947434
14230252965
PVM-10.6 w
ith 481-0.0115000
0.014000
8000.7
0.53150000
45000009375
Time constant τ
BW of
detectorSquare root of the
Optical signal
SaturationSaturation
Clipping
and 3dB frequencypream
presponsivity
detector areaat S/N
=1 times
level forlevel for
level forare related by
indicatedtim
es gaintim
es square rootSystem
CW
signalPulsed
preamp
f=1/(2πτ)of the 3dB
Responsivity
divided bysignal
divided by-slow
er offrequency divided
Optical
divided byelectrical
detector or preamp
by the D* from
signal at
Optical
signal forshow
nproduct lit
S/N=1
signal atS/N
=1S/N
=1
5 1
Boston
Electron
ics Corp
orationA
mplifier 481-1X to 481-
20X saturates at……
…481-200X saturates at…
..493A
and 493A/40
saturates at .............
from product lit
and typical 50 Ω
detector resistance
Shading indicates saturation of detector or pream
p for C
W
case
This rather com
plicated chart is intended to illustrate how the perform
ance of our detectors (in this example the m
odel PVM
-10.6 with 1x1 m
m active area and
typical values of responsivity and D*) is affected by variously by (a) saturation of the detector itself or (b) by saturation of a follow
ing preamp. T
he shaded cells indicate the low
er of S/N for C
W signals and indicates w
hether it is the detector that saturates first or the preamp that saturates first. W
e loosely define saturation in the detector as the point at w
hich output deviates from linearity by 20%
; in the preamp w
e define saturation as the output at which the signal is clipped. N
otice that detector saturation is M
UC
H L
OW
ER
for the CW
case. The m
ost comm
on signal is quasi-CW
(for example an R
F-modulated C
O2 laser) and should be
considered CW
. Any pulsed laser w
ith a duty cycle over 1% or pulse length longer than 10 m
icroseconds is probably more like C
W than pulsed.
PVM-10.6 saturation w
ith preamps rev 10-9-09.XLS
Page 9
Time Constant and High Frequency Cut Off Calculator
Time Frequency Time Frequency
Constant (τ) (MHz) Constant (τ) (MHz)
(nsec) hf (nsec) hf
0.1 1592.36 10 15.92
0.2 796.18 20 7.96
0.3 530.79 40 3.98
0.4 398.09 80 1.99
0.5 318.47 100 1.59
0.6 265.39 120 1.33
0.7 227.48 140 1.14
0.8 199.04 150 1.06
0.9 176.93 160 1.00
1 159.24 180 0.88
2 79.62 200 0.80
3 53.08 220 0.72
4 39.81 240 0.66
5 31.85 250 0.64
6 26.54 260 0.61
7 22.75 280 0.57
8 19.90 300 0.53
9 17.69 320 0.50
fh = 1/(2*π*τ)
fh = high cutoff frequency
τ = time constant of detector (unbiased or biased) - see detector data sheet for values
Calculatorenter tau to calculate for high cutoff frequency
1.5 106.10 MHz
τ fh
Prices subject to change without notice
Vigo detector sets we stock in Boston
SET Description - reason for selecting Composed of Price USD $PVMI-4TE-10.6-1x1PIP-DC-200M-F-M8PTCC-01-BAS
PVM-10.6-1x1SIP-DC-100M-GPPS-03
PVI-4TE-6-1x1PIP-DC-200M-F-M8PTCC-01-BAS
PVM-10.6-1x1uIP-DC-10M-SPPS-03
Sets in stock to solve customer immediate delivery needs
VS1Sensitive fast 1x1 mm LWIR set for < 2 to 11+ microns with user selectable DC or AC-coupling, user selectable upper frequency 1.5MHz, 15MHz or 200MHz, and variable gain
$4,405
VS3Room temp fast 1x1 mm LWIR set, small, for < 2 to 11+microns, DC to 100MHz and variable gain
$2,647
VS10Room temp fast 1x1 mm LWIR set, micro sized preamp, for< 2 to 11+ microns, DC to 10MHz
$2,330
VS7Sensitive fast MWIR set for < 3.5 to 6+ microns with user selectable DC- or AC-coupling, user selectable upper frequency 1.5MHz, 15MHz or 200MHz and variable gain
$3,834
03-09-19 We stock for immediate delivery 03--09-19