STORAGE CORP.

Michael E. ThomasCEO / Chairman

Pocomoke City, Md.

fedrive@pacbell.net

www.colossalstorage.net

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1.2 Petabyte Holographic / Spintronic Data Storage

4Courtesy Yole Developpement Dr. Eric Mounier 2002

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6University of Osnabruk Germany 2002

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Pockels Effect.Certain crystals also exhibit a linear electro-optic effect such that thebirefringence occurs when it is placed in an electric field and a beam oflight is passed through the sample in the direction of the field.

Induced birefringence (Electric field).

where is the Pockels coefficient, and is the index with no fieldapplied. Therefore

Both Pockels and Kerr effects can be used to construct very fast opticalshutters ( sec) by placing them between crossed polarizers. Whenretardation = device will be transparent.

Pockels cells work with typically lower voltages thanequivalent Kerr cell.

Ray Sharples

THIS SCHEMATICS SHOWS THE PRINCIPLE OF FERROELECTRIC RAM. AN ION IN THE LATTICE IS PERMANENTLY POLARIZED IN EITHER THE ‘0’ OR ‘1’ POSITION FOR BINARY MEMORY. RAMTRON CORP.

SCHEMATIC LEVEL DIAGRAM OF ULTRAVIOLET PHOTO REFRACTION EFFECTS IN MULTIFERROIC MOLECULE.

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GABOR DIFFRACTION EFFICIENCY OF A HOLOGRAPHIC GRATING IN A CRYSTAL OF LINBO3 DOPED WITH FE AND MN WAS MEASURED DURING RECORDING AND

READOUT. “ULTRAVIOLET ONLY” IS A THOMAS CONCEPTUALIZED EXPECTATION NEEDING PROOF OF

CONCEPT VERIFICATION.

10University of Osnabruk Germany 2002

NON-DESTRUCTIVE POLARIZATION READOUT BY UV ILLUMINATION OF FERROELECTRIC THIN FILMS

A tuneable UV light in the intrinsic spectral range of PZT (340-400 nm) was produced by doubling the output of a commercial dye laser. Very shortUV pulses (FWHM=6-7 ns) were used to evaluate the speed of Non Destructive Read Optical (NDRO) process.

The initial results showed that the direction and amplitude of transient photocurrent induced by UV pulse reflect the polarisation state of PZT films(Fig.1). The remanent polarisation of the films was stable upon consecutive illumination pulses, i.e., was read non-destructively. This wasconfirmed by interferometric piezoelectric technique. The speed of NDRO signal was limited by the capacitance of test structures and could bescaled down with the size of the memory cell. The spectral dependence of polarisation-dependent current was controlled by the excitation of non-equilibrium charge carriers over the forbidden gap of PZT having a maximum near 350 nm (Fig.2). The analysis of experimental results showedthat the bulk photovoltaic effect is a probable source of NDRO signal in PZT films. The calculated photovoltaic tensor component (G31=0.5x10-9cm/V) was in a good agreement with typical values reported previously for perovskite type ferroelectrics.

Figure 1: Transient photocurrents in PZT films under UV laser pulses. Figure 2: Spectral distribution of NDRO signal.

Laboratoire de Céramique A.L. Kholkin 1996-711

UV Atomic Holographic Optical Storage Nanotechnology 400nm – 1 nm

Blu-Ray Phase Change Disk Drives 405 nm

Present Day Magnetic Hard Drives1 mm to 25

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The Electro Magnetic Spectrum

InPhase Aprilis Maxoptic Drives 500 -650 nm

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THE PICTURES SHOWN BELOW ARE EXPERIMENTAL RESULTS OF WRITINGINFORMATION BITS IN LITA03 (LITHIUM TANTALATE ) , WHICH IS ONE OF THETYPICAL FERROECLECTRIC SINGLE CRYSTALS.

RECORDING DENSITY HAS REACHED 1.5 TERA BIT/ SQ. IN. TO DATA.

14Courtesy of Phonon Device Lab. (Cho Lab.) R.I.E.C. of TOHOKU UNIVERSITY

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Courtesy of Phonon Device Lab. (Cho Lab.) R.I.E.C. of TOHOKU UNIVERSITY

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* New Patented photonic nanostorage media – Spintronic and Atomic Holographic Optical * New Patented nanointegrated semiconductor FE Read/Write Head * New Patented nanotechnology writing using UV/Blue Laser Diode and Electric Field Transducer * New Patented nanorecording technology reading using UV/Blue Diode or transistor or a CMOS FET * Same Infinite Read/Write operations to Disk/Tape/Card Drives * Almost Infinite Storage Life span of 100 years for the Media * Non Contact Recording * 3D Volume Atomic Holographic Storage having both positive and negative index of refraction. * Extremely Low Write and Read Currents * Extremely Fast Switch Subnanosecond State Change * 400,000 times faster Read and Write Data Transfer Rates using visual data * Extended Temperature Range * No Electrostatic Discharge Damage to Molecular Data Storage * No Altitude Requirements * Very Smooth Surface Morphology * Dense Packed Crystallis - < 50 Angstrom in Diameter over 40,000 Tbits/cu.cm. density * Same Non Destructive Read Out as Magnetic Media * Patented image data transfer capable of Bit for Bit erase / write / read holographic data storage * UV/Deep Blue NLO Ferroelectric Bandgap Material for reliability * Same Coating/Sputtering/MOCVD Processing for Making Magnetic Media * 8 cents per Gigabyte versus Hard Drives cost of $ 1.00 Gigabyte * 1 FeDisk = 20,000 DVD's or 4,000 Blu-Ray disks * Initial cost per gigabyte will equal or be greater than hard drives so Colossal can recapture R&D expenses * A 3.5 in. 10 Terabyte Fedisk will store 6,840 raw uncompressed TV Hours * No Power Requirements for Media - Non Volatile Media * Much higher sales margins for media, heads, and drive than magnetic/optical * Proprietary Holographic nanoTechnology and Techniques for disk, card, drum, and film a Worlds First * 2 Patents Granted

PERIPHERAL STORAGE IMPROVEMENTS

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3D HOLOGRAPHIC OPTICAL MEMORY VS MAGNETIC SPIN VALVE GMR

3 D Volume FeDRIVE 2 D Area HARDDISK

MEDIA TYPE Ferroelectric Perovskite FerromagneticRECORDING TYPE UV Photon QV Field Poling BH - magnetic polarityBIT DENSITIES/ sq. in. 400 Terabits and higher 400 Mbits to 45 GbitsTRACK DENSITY >700,000 tpi 70,000 tpiBIT PER CUBIC CENTIMETER > 40,000 Tbits/cu.cm. 50 Tbits/sq.cm.NONVOLATILITY Yes YesHEAD/MEDIA HEIGHT 1 to 15 millimeters .6 micron (contact)DESTRUCTIVE READOUT No NoNEED TO WRITE BACK No NoCELL AREA RATIO 2 -3 >100READ TIME RATIO 50 nsec 5 millisecWRITE TIME RATIO 50 nsec 5 millisecNUMBER OF PERMISSIBLE READ Infinite InfiniteNUMBER OF PERMISSIBLE REWRITE Infinite InfiniteDATA RETENTION WITHOUT POWER >100 year 10 yearNEED OF DRIVE UNIT Yes Yes ALTITUDE REQUIREMENT None 15 k ft.NUCLEAR RADIATION / EMF DAMAGE No YesCOSMIC RADIATION DAMAGE No YesCOATING PROCESS MOCVD/ RF magnetronCOST PER BYTE $ .08 gigaabyte $ .20 megabyteSALES MARGIN PER $ .15 gigabyte $ .38 megabyteBYTEPARTICLE SIZE 200 angstrom length 100 angstrom

50 angstrom diameterDATA TRANSFER RATE 10 Tera bit/sec and up 250 M bit/sec 4nsTEMPERATURE RANGE media to 350 f 165 fOF MEDIAHEAD TYPE Semiconductor laser Mr and Gmr and Tmr

MOS fet floating gate single element inductive Optical transistor spin valve GMR

RECORDING PHYSICS electrostatic NLO crystal electromagnetic /phaseBIT STORAGE PHYSICS 3D volume holographic 2D area spinning Atomic / Molecular Switch electronsCOATING THICKNESS 2000 angstroms 3 microinchPARTICLE CHARGE 250 microvolt 500 microvoltDISK ROTATION RPM not dependent 15,000MAXIMUM

3D HOLOGRAPHIC / SPINTRONIC OPTICAL MEMORY VS LUCENT INPHASE HOLOGRAPHIC DRIVE 3 D Volume Atomic Drive 3 D Volume Holographic Drive

DRIVE COST $ 750 when in production $ 15,000 when in production DISK COST $ 45 – 90 mm 100 Terabytes $ 45 - 130 mm 300 Gigabytes DISK CAPACITY COMPARISON 1 FeDisk 50 InPhase disks = 1 FeDisk MEDIA TYPE Multiferroic Perovskite Plastic Ferroelectric Polymer (LiNbO3) RECORDING TYPE UV Photon QV Field Poling Red/Green Laser Spectral Hole Burning BIT DENSITIES/ sq. in. 400 Terabits and higher 32 Gbits BIT PER CUBIC CENTIMETER > 40,000 Tbits/cu.cm. 32 Gbits/sq.cm. COATING PROCESS MOCVD/ RF magnetron COST PER BYTE $ .00005 Gigabyte $ .50 Gigabyte SALES MARGIN PER Gigabyte $ .00050 Gigabyte $ 0.03 Gigabyte GIGABYTE PARTICLE SIZE 5 nanometers 100 nanometers DATA TRANSFER RATE 10 Tera bit/sec and up 235 Mbits/sec write, 117 Mbits/sec read TEMPERATURE RANGE media to 350 f 165 f OF MEDIA HEAD TYPE Semiconductor laser SLM CMOS camera assembly MOS fet floating gate 100 mw green laser Optical transistor 52 mw blue laser RECORDING PHYSICS electrostatic NLO crystal plastic photopolymer BIT STORAGE PHYSICS 3D volume holographic 3D volume holographic Atomic / Molecular Switch Photo Ionization in Plastic COATING THICKNESS 10 to 100 mm 3 mm RANDOM WRITE/READ PATTERN Bit/Byte/Word SLM Page Silk-screened DIGITAL DATA PAGE 150,000 3,000 SHRINKAGE 0.0 % .3 to .1 % due to plastic encapsulated READING METHOD Vertical Interference Multiplexed Layered Interference LASER TECHNOLOGY Solid State Solid State WRITE FAILURE PERFORMANCE None Data Overlap Problems MAXIMUM LAYER DENSITY > 1000 molecule layers 9 layers MECHANICAL WRITE COMPONENT None Many Mechanical Shutters RANDOM READ SEEK TIMES 6 to 13 ms Slow, no numbers published LENSES AND FILTERS 1 lens > 24 lenses/filters and 17 um mirrors TRACK ALIGNMENT Closed Loop Optical Servo Servo marks and mechanical alignment SYMETRICAL WRITE / READ YES NO MARKET FOCUS Magnetic Drive Market CD/DVD/Blu-Ray/HD-DVD PATENT INFRINGEMENT NONE YES, very likely with Colossal in near future. POSSIBLE

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STORAGE CORP.

Michael E. ThomasCEO / Chairman

Pocomoke City, Md.

fedrive@pacbell.net

www.colossalstorage.net

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